JP3095514B2 - Substrate holding board - Google Patents

Substrate holding board

Info

Publication number
JP3095514B2
JP3095514B2 JP3862492A JP3862492A JP3095514B2 JP 3095514 B2 JP3095514 B2 JP 3095514B2 JP 3862492 A JP3862492 A JP 3862492A JP 3862492 A JP3862492 A JP 3862492A JP 3095514 B2 JP3095514 B2 JP 3095514B2
Authority
JP
Japan
Prior art keywords
coating layer
substrate
substrate holding
wafer
holding board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP3862492A
Other languages
Japanese (ja)
Other versions
JPH05205997A (en
Inventor
純正 山本
博義 久保
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP3862492A priority Critical patent/JP3095514B2/en
Publication of JPH05205997A publication Critical patent/JPH05205997A/en
Application granted granted Critical
Publication of JP3095514B2 publication Critical patent/JP3095514B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/707Chucks, e.g. chucking or un-chucking operations or structural details

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、半導体素子や液晶ディ
スプレイを製造するための露光装置等の基板保持盤に関
し、特にウエハ等基板を透過した照明光の反射によって
露光、アライメントまたはフォーカス調整の精度を損な
うことのない基板保持盤に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate holding board such as an exposure apparatus for manufacturing a semiconductor device or a liquid crystal display, and more particularly to the precision of exposure, alignment or focus adjustment by reflecting illumination light transmitted through a substrate such as a wafer. The present invention relates to a substrate holding board that does not impair the performance.

【0002】[0002]

【従来の技術】従来、半導体素子や液晶ディスプレイを
製造するための露光装置のウエハチャック等の基板保持
盤は、アルミ系の金属からなる母材にアルマイトメッキ
を施したものや、ステンレスやアルマイト系のセラミッ
クまたはアルマイトセラミックからなる母材にTiC等
の被覆を施したものが用いられていた。このような基板
保持盤にウエハ等基板(以下、「基板」という。)を保
持させて、露光用の照明光あるいはアライメントやフォ
ーカス調整用の照明光を照射した場合は、図4に示すよ
うに、基板Wに照射された照明光Sの一部分が前記基板
Wを透過して基板保持盤51に到達し、その多くが該基
板保持盤51の被覆層52の表面で反射される。
2. Description of the Related Art Conventionally, a substrate holding plate such as a wafer chuck of an exposure apparatus for manufacturing a semiconductor element or a liquid crystal display has a base material made of an aluminum-based metal and is subjected to alumite plating, a stainless steel or alumite-based material. A base material made of ceramic or alumite ceramic is coated with TiC or the like. When a substrate such as a wafer (hereinafter, referred to as a “substrate”) is held on such a substrate holding plate and irradiated with illumination light for exposure or illumination light for alignment or focus adjustment, as shown in FIG. A part of the illumination light S applied to the substrate W passes through the substrate W and reaches the substrate holding plate 51, and most of the light is reflected by the surface of the coating layer 52 of the substrate holding plate 51.

【0003】[0003]

【発明が解決しようとする課題】しかしながら、基板に
入射した照明光の一部分が基板保持盤の表面によって反
射されて再び前記基板の特定箇所に入射すれば、これに
よってレジストの不要な部分が露光されたり、アライメ
ントやフォーカス調整の精度を低下させる等の弊害が発
生する。
However, if a part of the illumination light incident on the substrate is reflected by the surface of the substrate holding plate and re-enters the specific portion of the substrate, an unnecessary portion of the resist is exposed. And adverse effects such as lowering the accuracy of alignment and focus adjustment occur.

【0004】本発明は、上記従来の技術の有する解決す
べき課題に鑑みてなされたものであり、基板を透過した
照明光の反射によって、レジストの不要な部分が露光さ
れたり、アライメントやフォーカス調整の精度を低下さ
せることのない基板保持盤を提供することを目的とする
ものである。
SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems to be solved by the prior art, and unnecessary portions of a resist are exposed due to reflection of illumination light transmitted through a substrate, and alignment and focus adjustment are performed. It is an object of the present invention to provide a substrate holding board that does not lower the precision of the substrate.

【0005】[0005]

【課題を解決するための手段】上記の目的を達成するた
めに、本発明の基板保持盤は、基板に接触してこれを支
持する支持面を有する基板保持盤であって、その前記支
持面を有する側の表面が、粗面化された表面をもつ反射
率の低い材料からなる第1の被覆層によって被覆されて
おり、該第1の被覆層少くとも前記支持面を被覆する
部分の表面が、平滑な表面をもつ透明材料からなる第2
の被覆層によって被覆されていることを特徴とする。
た、基板には照明光が照射されるものとしたり、基板が
ウエハであるものとする。
In order to achieve the above object, a substrate holding plate according to the present invention is a substrate holding plate having a support surface for contacting and supporting a substrate, wherein the support surface is provided. Is coated with a first coating layer of a low-reflectance material having a roughened surface, and at least a portion of the first coating layer covering the support surface. The second surface is made of a transparent material having a smooth surface.
Characterized by being covered with a coating layer of Ma
In addition, the substrate may be irradiated with illumination light,
Assume that it is a wafer.

【0006】[0006]

【作用】基板を透過した照明光の多くは反射率の低い第
1の被覆層によって吸収され、残りは前記第1の被覆層
の粗面化された表面で散乱光となって反射される。前記
第1の被覆層には平滑な表面をもつ透明な第2の被覆層
が積層されているため、基板保持盤に載置された基板が
これに吸着されても、前記基板の平坦度が粗面化された
第1の被覆層の表面の凹凸によって損われることはな
い。
Most of the illumination light transmitted through the substrate is absorbed by the first coating layer having a low reflectance, and the rest is reflected as scattered light on the roughened surface of the first coating layer. Since a transparent second coating layer having a smooth surface is laminated on the first coating layer, the flatness of the substrate is maintained even if the substrate placed on the substrate holding plate is adsorbed by the second coating layer. There is no damage due to unevenness of the surface of the roughened first coating layer.

【0007】[0007]

【実施例】本発明の実施例を図面に基づいて説明する。An embodiment of the present invention will be described with reference to the drawings.

【0008】図1は第1実施例を示すもので、(a)は
その斜視図、(b)は(a)の円Aで囲んだ部分の断面
を拡大して示す拡大部分断面図である。
FIGS. 1A and 1B show a first embodiment, in which FIG. 1A is a perspective view thereof, and FIG. 1B is an enlarged partial sectional view showing an enlarged section of a portion surrounded by a circle A in FIG. .

【0009】基板保持盤であるウエハチャックC1 は平
板状の本体1からなり、該本体1は、複数の突部1aを
有し、各突部1aは基板であるウエハ(図示せず)に接
触してこれを支持する支持面1bを有する。本体1の、
照明光を反射する表面である各支持面1bおよび前記突
部1a間の表面等は、反射率の低いSiCからなる第1
被覆層2によって覆われており、該第1の被覆層2の表
面2aは研削やブラスト加工によって粗面化される。
[0009] wafer chuck C 1 is a substrate holding plate consists of a flat body 1, body 1 has a plurality of protrusions 1a, the wafer (not shown) which are the projections 1a of the substrate It has a support surface 1b that contacts and supports it. Of the body 1,
The surfaces between the support surfaces 1b and the protrusions 1a, which are surfaces that reflect illumination light, are made of a first material made of SiC having a low reflectance.
The surface 2a of the first coating layer 2 which is covered with the coating layer 2 is roughened by grinding or blasting.

【0010】このように粗面化された第1の被覆層2の
表面2aは、平滑な表面をもつ透明材料であるAl2
3 からなる第2の被覆層3によって覆われている。な
お、ウエハチャックC1 に載置されたウエハは公知の吸
着手段によってこれに吸着される。
The surface 2a of the first coating layer 2 thus roughened is made of Al 2 O, which is a transparent material having a smooth surface.
3 and is covered by a second covering layer 3 made of the same. Incidentally, the placed wafer on the wafer chuck C 1 is adsorbed thereto by known suction means.

【0011】露光用あるいはアライメントやフォーカス
調整用の照明光が前記ウエハに照射されると、その一部
分は該ウエハを透過してウエハチャックC1 に到達する
が、第1の被覆層2は前述のように反射率の低い材料で
作られているためにこれによる反射光は少量であり、加
えて第1の被覆層2が粗面化されているために前記反射
光は散乱光となり、特定の箇所に集中することはない。
When illumination light for exposure or alignment or focus adjustment is applied to the wafer, a part of the light is transmitted through the wafer and reaches the wafer chuck C 1 , but the first coating layer 2 is formed as described above. Thus, the reflected light is small because the material is made of a material having a low reflectivity, and the reflected light becomes scattered light because the first coating layer 2 is roughened. Don't concentrate on places.

【0012】すなわち、前記反射光が前記ウエハの裏面
に逆照射されても、ウエハ表面のレジスト膜を露光した
り、アライメントあるいはフォーカス調整の障害となる
ことはない。また、前記第1の被覆層2の粗面化された
表面は、平滑な表面をもつ透明な第2の被覆層3によっ
て覆われているため、本体1に吸着されたウエハの平坦
度が、前記第1の被覆層2の表面の凹凸によって損われ
ることはない。
That is, even if the reflected light is irradiated back onto the back surface of the wafer, it does not expose the resist film on the wafer surface or hinder alignment or focus adjustment. Further, the roughened surface of the first coating layer 2 is covered with the transparent second coating layer 3 having a smooth surface, so that the flatness of the wafer adsorbed on the main body 1 is reduced. There is no damage due to the unevenness of the surface of the first coating layer 2.

【0013】図2は第2実施例を説明する拡大部分断面
図であって、本実施例の基板保持盤であるウエハチャッ
クC2 においては、本体11の各突部11aの支持面1
1bとなる部分自体が研削等によって粗面化されてお
り、これを覆う第1の被覆層12は前記支持面となる部
分の凹凸によって粗面化される。第1実施例と同様に第
1の被覆層12は反射率の低い材料で形成され、その表
面には平滑な表面をもつ透明な第2の被覆層13が積層
される。
[0013] Figure 2 is an enlarged partial sectional view for explaining the second embodiment, in the wafer chuck C 2 which is a substrate holding plate of the present embodiment, the support surface of the projections 11a of the body 11 1
The portion to be 1b itself is roughened by grinding or the like, and the first coating layer 12 covering the portion is roughened by the unevenness of the portion to be the support surface. As in the first embodiment, the first coating layer 12 is formed of a material having a low reflectance, and a transparent second coating layer 13 having a smooth surface is laminated on the surface.

【0014】図3は第3実施例を説明する拡大部分断面
図であって、本実施例の基板保持盤であるウエハチャッ
クC3 においては、本体21の各突部21aの支持面2
1bのみに平滑な表面をもつ透明な第2の被覆層23が
設けられる。すなわち第1の被覆層22の、ウエハ(図
示せず)に接触する部分の表面22aのみが第2の被覆
層23によって被覆される。なお、第1の被覆層22に
ついては第1実施例と同様であるので説明は省略する。
[0014] Figure 3 is an enlarged partial cross-sectional view illustrating a third embodiment, in the wafer chuck C 3 which is a substrate holding plate of the present embodiment, the support surface of the projections 21a of the body 21 2
A transparent second coating layer 23 having a smooth surface is provided only on 1b. That is, only the surface 22 a of the first coating layer 22 that is in contact with the wafer (not shown) is covered with the second coating layer 23. Note that the first coating layer 22 is the same as in the first embodiment, and a description thereof will be omitted.

【0015】[0015]

【発明の効果】基板保持盤に載置された基板を透過した
照明光の反射によってレジストが露光されたり、アライ
メントやフォーカス調整の精度が損われることがない。
その結果、高精度の露光、焼付けができる。
According to the present invention, the resist is not exposed due to the reflection of the illuminating light transmitted through the substrate placed on the substrate holding board, and the accuracy of alignment and focus adjustment is not impaired.
As a result, highly accurate exposure and printing can be performed.

【図面の簡単な説明】[Brief description of the drawings]

【図1】第1実施例を説明するもので、(a)はその斜
視図、(b)は(a)の円Aで囲まれた部分を拡大して
示す拡大部分断面図である。
FIGS. 1A and 1B are explanatory views of a first embodiment, in which FIG. 1A is a perspective view thereof, and FIG. 1B is an enlarged partial cross-sectional view showing a portion surrounded by a circle A in FIG.

【図2】第2実施例の一部分を示す部分断面図である。FIG. 2 is a partial sectional view showing a part of the second embodiment.

【図3】第3実施例の一部分を示す部分断面図である。FIG. 3 is a partial sectional view showing a part of a third embodiment.

【図4】従来例を説明する部分断面図である。FIG. 4 is a partial cross-sectional view illustrating a conventional example.

【符号の説明】[Explanation of symbols]

1 ,C2 ,C3 ウエハチャック 1,11,21 本体 1a,11a,21a 突部 1b,11b,21b 支持面 2,12,22 第1の被覆層 3,13,23 第2の被覆層C 1 , C 2 , C 3 Wafer chuck 1,11,21 Main body 1a, 11a, 21a Projection 1b, 11b, 21b Support surface 2,12,22 First coating layer 3,13,23 Second coating layer

───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7,DB名) H01L 21/027 B65G 49/07 G03F 7/20 H01L 21/68 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 7 , DB name) H01L 21/027 B65G 49/07 G03F 7/20 H01L 21/68

Claims (4)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 基板に接触してこれを支持する支持面を
有する基板保持盤であって、その前記支持面を有する側
の表面が、粗面化された表面をもつ反射率の低い材料か
らなる第1の被覆層によって被覆されており、該第1の
被覆層の少くとも前記支持面を被覆する部分の表面が、
平滑な表面をもつ透明材料からなる第2の被覆層によっ
て被覆されていることを特徴とする基板保持盤。
1. A substrate holding plate having a support surface which contacts and supports a substrate, wherein the surface having the support surface is made of a material having a roughened surface and a low reflectance. Wherein the surface of at least a portion of the first coating layer that covers the support surface is:
A substrate holding board covered with a second covering layer made of a transparent material having a smooth surface.
【請求項2】 第1の被覆層および第2の被覆層の材料
がそれぞれSiCおよびAl23 であることを特徴と
する請求項1記載の基板保持盤。
2. The substrate holding board according to claim 1, wherein the material of the first coating layer and the material of the second coating layer are SiC and Al 2 O 3 , respectively.
【請求項3】 基板には照明光が照射されることを特徴
とする請求項1または2記載の基板保持盤。
3. The substrate is irradiated with illumination light.
3. The substrate holding board according to claim 1, wherein:
【請求項4】 基板がウエハであることを特徴とする請
求項3記載の基板保持盤。
4. A process according to claim 1, wherein the substrate is a wafer.
The board holding board according to claim 3.
JP3862492A 1992-01-29 1992-01-29 Substrate holding board Expired - Fee Related JP3095514B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3862492A JP3095514B2 (en) 1992-01-29 1992-01-29 Substrate holding board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3862492A JP3095514B2 (en) 1992-01-29 1992-01-29 Substrate holding board

Publications (2)

Publication Number Publication Date
JPH05205997A JPH05205997A (en) 1993-08-13
JP3095514B2 true JP3095514B2 (en) 2000-10-03

Family

ID=12530399

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3862492A Expired - Fee Related JP3095514B2 (en) 1992-01-29 1992-01-29 Substrate holding board

Country Status (1)

Country Link
JP (1) JP3095514B2 (en)

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JP4502746B2 (en) * 2004-08-26 2010-07-14 京セラ株式会社 Liquid crystal substrate holder and manufacturing method thereof
JP4657824B2 (en) * 2005-06-17 2011-03-23 東京エレクトロン株式会社 Substrate mounting table, substrate processing apparatus, and method for manufacturing substrate mounting table
KR101168863B1 (en) 2009-02-23 2012-07-30 가부시키가이샤 소딕 Colored ceramic vacuum chuck and manufacturing method thereof
JP5270465B2 (en) * 2009-06-18 2013-08-21 信越化学工業株式会社 Susceptor, flash irradiation method using the same, and photomask blank manufacturing method
EP2490073B1 (en) 2011-02-18 2015-09-23 ASML Netherlands BV Substrate holder, lithographic apparatus, and method of manufacturing a substrate holder
EP3683627A1 (en) 2012-02-03 2020-07-22 ASML Netherlands B.V. Substrate holder and lithographic apparatus
JP6245174B2 (en) * 2012-08-28 2017-12-13 株式会社ニコン Substrate support apparatus and exposure apparatus
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160036355A1 (en) * 2013-03-29 2016-02-04 Smitomo Osaka Cement Co., Ltd. Electrostatic chuck device
US10389278B2 (en) * 2013-03-29 2019-08-20 Sumitomo Osaka Cement Co., Ltd. Electrostatic chuck device with multiple fine protrusions or multiple fine recesses

Also Published As

Publication number Publication date
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