KR0165327B1 - Plate chuck of semiconductor apparatus - Google Patents
Plate chuck of semiconductor apparatus Download PDFInfo
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- KR0165327B1 KR0165327B1 KR1019950062184A KR19950062184A KR0165327B1 KR 0165327 B1 KR0165327 B1 KR 0165327B1 KR 1019950062184 A KR1019950062184 A KR 1019950062184A KR 19950062184 A KR19950062184 A KR 19950062184A KR 0165327 B1 KR0165327 B1 KR 0165327B1
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- protrusion
- chuck
- glass
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- semiconductor device
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
반도체 장치의 플래트 척에 대해 기재되어 있다. 이는, 그 윗면의 크기가 밑면의 크기보다 작은 육면체 모양의 돌출부, 돌출부를 지지하는 지지대 및 지지대를 관통하는 모양으로 형성된 공기 흡입을 위한 흡입구를 포함하는 것을 특징으로 한다. 또한, 상기 플래트 척은 세라믹으로 형성되어 있다. 따라서, 돌출부 표면에 발생하는 미세한 요철의 생성을 방지할 수 있고, 돌출부 표면에 생성되는 입자에 의해, 노광시, 글래스에 얼룩이 발생하는 확률을 줄일 수 있다.A flat chuck of a semiconductor device is described. It is characterized in that it comprises a hexahedral-shaped protrusion of which the size of the upper surface is smaller than the size of the bottom, a support for supporting the protrusion and the inlet for air suction formed in the shape of penetrating the support. In addition, the plate chuck is made of ceramic. Therefore, it is possible to prevent the generation of minute unevenness generated on the surface of the protrusions, and by the particles generated on the surface of the protrusions, it is possible to reduce the probability of spots on the glass during exposure.
Description
제1도는 종래의 반도체 장치의 플레트 척을 도시한 단면도이다.1 is a cross-sectional view showing a plate chuck of a conventional semiconductor device.
제2도는 종래의 반도체 장치의 플래트 척을 이용하여 노광 공정을 행한 후의 클래스를 도시한 평면도이다.2 is a plan view showing a class after performing an exposure process using a flat chuck of a conventional semiconductor device.
제3(a)도 및 제3(b)도는 본 발명에 의한 반도체 장치의 플래트 척을 도시한 평면도 및 단면도이다.3 (a) and 3 (b) are a plan view and a sectional view of the flat chuck of the semiconductor device according to the present invention.
제4도는 본 발명에 의한 반도체 장치의 플래트 척을 이용하여 노광 공정을 행하는 것을 도시한 단면도이다.4 is a cross-sectional view showing the exposure process using the flat chuck of the semiconductor device according to the present invention.
본 발명은 반도체 장치에 관한 것으로, 특히 노광시, 반도체 기판 또는 글래스를 고정시키는 플래트 척에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor devices, and more particularly to a flat chuck for fixing a semiconductor substrate or glass during exposure.
LCD TFT(Liquid Crystal Thin Film Transistor) 패널을 제작하기 위해서는 최소 6-8 단계의 사진식각 공정이 필요하다. 사진 시각 중 노광 공정시, 글래스(glass)를 고정시키는 수단이 필요한데, 통상적으로 플래트 척을 이용한다.To produce LCD TFT (Liquid Crystal Thin Film Transistor) panels, a photolithography process of at least 6-8 steps is required. In the exposure process during photographic vision, a means for fixing glass is required, and a flat chuck is usually used.
제1도는 종래의 반도체 장치의 플래트 척을 도시한 단면도로서, 도면 부호10)은 플래트 척을 구성하는 지지대를, 10a는 플래트 척을 구성하는 돌출부를, 12는 공기 흡입을 위한 흡입구를, 20은 글래스를 나타낸다.1 is a cross-sectional view showing a flat chuck of a conventional semiconductor device, reference numeral 10 is a support constituting the flat chuck, 10a is a protrusion constituting the flat chuck, 12 is an inlet for air intake, 20 is It shows glass.
종래의 플래트 척은, 그 윗면의 면적과 그 밑면의 면적이 동일한 육면체 모양으로 된 돌출부(10a)와, 이 돌출부(10a)를 지지하는 지지대(10)와, 이 지지대를 관통하는 모양으로 형성된 공기 흡입을 위한 흡입구(12)로 구성된다.Conventional flat chucks have a hexahedral projection 10a having the same upper surface area and lower surface area, support 10 for supporting the projection 10a, and air formed in a shape that penetrates the support. It consists of a suction port 12 for suction.
돌출부(10a)의 표면에 닿도록 글래스(20)을 플래트 척에 얹은 후, 흡입구(12)를 통해 공기를 흡입하면, 플래트 척에 얹혀진 글래스(20)는 공기압에 의해 고정된다.When the glass 20 is placed on the plate chuck so as to contact the surface of the protrusion 10a and the air is sucked through the inlet 12, the glass 20 placed on the plate chuck is fixed by air pressure.
이때, 글래스(20)의 뒷면이나 돌출부(10a)의 표면에 생긴 입자(particle)(P)에 의해 글래스가 휘어지는 현상(A 부분 참조)이 발생한다.At this time, a phenomenon in which the glass is bent due to particles P generated on the back surface of the glass 20 or the surface of the protrusion 10a occurs (see section A).
이러한 휘어짐은 후속으로 진행되는 노광 공정 시, 마스크의 미스얼라인(misalign)을 유발시켜 시야단차를 형성시킴으로써 신뢰도 높은 LCD TFT 판널 제조를 불가능하게 한다. 특히, 플래트 척이 알루미늄으로 되어 있는 종래의 경우, 돌출부(10a)의 표면에 발생된 긁힘(scratch) 및 찍힘 등에 의해 미세한 요철이 생기며, 이러한 미세한 요철의 생성은 입자 발생과 동일한 효과를 낳음으로써 소자의 신뢰도를 떨어뜨리는 중요한 요인으로 작용한다.Such warpage causes a misalignment of the mask during the subsequent exposure process to form a field of view, thereby making it impossible to manufacture a reliable LCD TFT panel. In particular, in the conventional case in which the flat chuck is made of aluminum, fine irregularities are generated by scratches and scratches generated on the surface of the protrusion 10a, and the formation of such fine irregularities produces the same effect as the generation of particles. It is an important factor to reduce the reliability of the.
제2도는 종래의 반도체 장치의 플래트 척을 이용하여 노광 공정을 행한 후의 글래스를 도시한 평면도로서, P는 입자를 나타내고, B는 글래스에 생긴 나비 형태의 얼룩을 나타낸다.2 is a plan view showing a glass after performing an exposure process using a flat chuck of a conventional semiconductor device, in which P represents particles and B represents butterfly-shaped unevenness formed on the glass.
상기 제1도에 도시된 것과 같이, 돌출부(10a)의 표면에 입자(P)가 생성되어 있는 상태 또는 글래스(20) 뒷면에 입자(P)가 생성되어 있는 상태에서 노광 공정을 행하면, 글래스에는 상기 입자를 중심으로 나비 모양의 얼룩(B)이 발생한다.As shown in FIG. 1, when the exposure process is performed in a state in which particles P are formed on the surface of the protrusion 10a or in a state in which particles P are formed on the back surface of the glass 20, the glass is applied to the glass. Butterfly blobs (B) occur around the particles.
이러한 현상은 글래스의 두께가 얇아질수록 더욱 심해지는데, 현재 LCD TFT 판널 제작을 위해서는 1.1mm 두께의 글래스가 사용되고 있지만, 차세대에는 0.7mm 또는 0.5mm로 그 두께가 얇아질 예정이므로 입자 발생에 의한 노광 공정의 신뢰도 저하 문제는 해결되어야할 필수문제이다.This phenomenon is getting worse as the thickness of glass gets thinner. Currently, 1.1mm thick glass is used for LCD TFT panel production, but in the next generation, the thickness will be thinned to 0.7mm or 0.5mm. The problem of lowering the reliability of the process is an essential problem to be solved.
본 발명의 목적은 긁힘 또는 찍힘에 의한 미세한 요철 생성이 없고, 돌출부 표면에 생성된 입자에 의해 노광시 얼룩이 지는 현상을 줄일 수 있는 반도체 장치의 플래트 척을 제공하는데 있다.SUMMARY OF THE INVENTION An object of the present invention is to provide a flat chuck of a semiconductor device which does not generate fine irregularities due to scratching or stamping, and reduces staining during exposure by particles generated on the surface of the protrusion.
상기 목적을 달성하기 위한, 본 발명에 의한 플래트 척은, 그 윗면의 크기가 밑면의 크기보다 작은 육면체 모양이 돌출부; 상기 돌출부를 지지하는 지지대; 및 상기 지지대를 관통하는 모양으로 형성된 공기 흡입을 위한 흡입구를 포함하는 것을 특징으로 한다.In order to achieve the above object, the flat chuck according to the present invention, the hexahedral shape is smaller than the size of the bottom surface of the upper surface projection; A support for supporting the protrusion; And an inlet for air intake formed in a shape penetrating the support.
이때, 상기 돌출부 및 지지대는 세라믹으로 형성되어 있는 것이 바람직하다.At this time, the protrusion and the support is preferably formed of a ceramic.
또한, 상기 돌출부의 윗면은 1.0 × 1.0의 크기로 형성되어 있고, 그 밑면은 5.0 × 5.0의 크기로 형성되어 있는 것이 바람직하다.In addition, it is preferable that the upper surface of the protrusion is formed in the size of 1.0 × 1.0, and the lower surface thereof is formed in the size of 5.0 × 5.0.
따라서, 본 발명에 의한 반도체 장치의 플래트 척에 의하면, 돌출부 표면에 발생하는 미세한 요철의 생성을 방지할 수 있고, 돌출부 표면에 생성되는 입자에 의해, 노광시, 글래스에 얼룩이 발생하는 확률을 줄일 수 있다.Therefore, according to the flat chuck of the semiconductor device according to the present invention, it is possible to prevent the generation of fine irregularities occurring on the surface of the protrusions, and to reduce the probability of spots on the glass during exposure by the particles generated on the surface of the protrusions. have.
이하, 첨부한 도면을 참조하여, 본 발명을 더욱 자세하게 설명하고자 한다.Hereinafter, with reference to the accompanying drawings, it will be described in more detail the present invention.
제3(a) 및 (b)도는 본 발명에 의한 반도체 장치의 플래트 척을 도시한 평면도 및 단면도로서, 구체적으로 제3(a)도는 플래트 척의 돌출부를 도시한 평면도이고, 제3(b)도는 플래트 척의 지지대(30)의 돌출부(30a)를 도시한 단면도이다.3 (a) and (b) are plan and cross-sectional views showing a flat chuck of a semiconductor device according to the present invention. Specifically, FIG. 3 (a) is a plan view showing protrusions of the flat chuck. It is sectional drawing which shows the protrusion part 30a of the support stand 30 of a flat chuck.
돌출부(30a)의 윗면(C)은 1.0mm × 1.0mm의 크기로 되어있고, 밑면(D)은 5.0mm × 5.0mm의 크기로 되어 있다. 즉, 돌출부의 윗면의 크기와 밑면의 크기가 동일하던 종래와 달리, 본 발명에서는, 돌출부(30a)의 윗면(C)의 크기는 밑면(D)의 크기보다 작다.The upper surface C of the protruding portion 30a is 1.0 mm x 1.0 mm in size, and the bottom surface D is 5.0 mm x 5.0 mm in size. That is, unlike the prior art in which the size of the top surface and the bottom surface of the protrusion are the same, in the present invention, the size of the top surface C of the protrusion 30a is smaller than the size of the bottom surface D.
돌출부(30a)의 단면은 그 윗변의 길이가 아랫변의 길이보다 작은 마름모꼴로서, 세로변은 수직축(1)에 대해 25°정도 기울어져 있다.The cross section of the protrusion part 30a is a rhombus whose length of the upper side is smaller than the length of the lower side, and the vertical side is inclined by about 25 ° with respect to the vertical axis 1.
전체적으로, 본 발명에 의한 플래트 척은, 그 윗면의 크기가 그 밑면의 크기보다 작은 육면체 모양으로 되어 있다. 따라서, 글래스와 접하는 면적이 종래보다 15 정도 작아지므로 입자가 돌출부에 생성되는 확률 및 글래스 뒷면에 생성된 입자가 돌출부의 표면과 접할 확률을 이에 비례하여 작아지게 된다.In general, the plate chuck according to the present invention has a hexahedron shape whose size of the upper surface is smaller than that of the lower surface. Therefore, since the area in contact with the glass is about 15 smaller than in the prior art, the probability that the particles are formed in the protrusions and the probability that the particles are formed on the rear surface of the glass are in contact with the surface of the protrusions are proportionally smaller.
또한, 본 발명에 의한 플래트 척은, 알루미늄을 형성되던 종래와는 달리, 세라믹으로 형성되므로 알루미늄의 긁힘 또는 찍힘에 의해 생성되던 미세한 요철이 발생하지 않는다.In addition, the plate chuck according to the present invention is formed of a ceramic, unlike the prior art in which aluminum is formed, so that minute unevenness generated by scratching or stamping of aluminum does not occur.
제4도는 본 발명에 의한 반도체 장치의 플래트 척을 이용하여 노광 공정을 행하는 것을 도시한 단면도로서, 도면부호 32는 공기 흡입을 위한 흡입구를 나타낸다.4 is a cross-sectional view showing the exposure process using the flat chuck of the semiconductor device according to the present invention, wherein reference numeral 32 denotes an intake port for air intake.
글래스(40)은 돌출부(30a)의 표면과 닿도록 얹혀져 있다. 글래스(40)와 돌출부(30a)가 닿는 면적이 종래보다 작으므로, 글래스의 뒷면에 생성된 입자(P)가 돌출부(30a)의 표면과 접하는 확률은 종래보다 작아진다.The glass 40 is placed so as to contact the surface of the protrusion 30a. Since the area where the glass 40 and the protrusions 30a come in contact with each other is smaller than before, the probability that the particles P formed on the rear surface of the glass come into contact with the surface of the protrusions 30a is smaller than before.
따라서, 본 발명에 의한 반도체 장치의 플래트 척에 의하면, 재질을 세라믹으로 하고 그 윗면의 면적을 밑면의 면적보다 작도록 돌출부를 형성함으로써 첫째, 돌출부 표면에 발생하는 미세한 요철의 생성을 방지할 수 있고, 둘째, 돌출부 표면에 생성되는 입자에 의해, 노광시 글래스에 얼룩이 발생하는 확률을 줄일 수 있다.Therefore, according to the flat chuck of the semiconductor device according to the present invention, first, by forming the protrusions such that the material is ceramic and the area of the top surface is smaller than the area of the bottom surface, first, it is possible to prevent the generation of minute irregularities on the surface of the protrusions. Second, by the particles generated on the surface of the protrusions, it is possible to reduce the probability of spots on the glass during exposure.
본 발명은 상기 실시예에 한정되지 않으며, 많은 변형이 본 발명의 기술적 사상내에서 당 분야에서 통상의 지식을 가진 자에 의하여 실시 가능함은 명백하다.The present invention is not limited to the above embodiments, and it is apparent that many modifications can be made by those skilled in the art within the technical idea of the present invention.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950062184A KR0165327B1 (en) | 1995-12-28 | 1995-12-28 | Plate chuck of semiconductor apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950062184A KR0165327B1 (en) | 1995-12-28 | 1995-12-28 | Plate chuck of semiconductor apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR970053326A KR970053326A (en) | 1997-07-31 |
| KR0165327B1 true KR0165327B1 (en) | 1999-02-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950062184A KR0165327B1 (en) | 1995-12-28 | 1995-12-28 | Plate chuck of semiconductor apparatus |
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| Country | Link |
|---|---|
| KR (1) | KR0165327B1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105023862A (en) * | 2014-04-30 | 2015-11-04 | 捷进科技有限公司 | Chip bonder and bonding method |
-
1995
- 1995-12-28 KR KR1019950062184A patent/KR0165327B1/en not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105023862A (en) * | 2014-04-30 | 2015-11-04 | 捷进科技有限公司 | Chip bonder and bonding method |
| CN105023862B (en) * | 2014-04-30 | 2018-01-19 | 捷进科技有限公司 | Chip attachment machine and attaching method |
Also Published As
| Publication number | Publication date |
|---|---|
| KR970053326A (en) | 1997-07-31 |
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