JP4502746B2 - Liquid crystal substrate holder and manufacturing method thereof - Google Patents

Liquid crystal substrate holder and manufacturing method thereof Download PDF

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JP4502746B2
JP4502746B2 JP2004247199A JP2004247199A JP4502746B2 JP 4502746 B2 JP4502746 B2 JP 4502746B2 JP 2004247199 A JP2004247199 A JP 2004247199A JP 2004247199 A JP2004247199 A JP 2004247199A JP 4502746 B2 JP4502746 B2 JP 4502746B2
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liquid crystal
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support surface
resin film
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徹彌 井上
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Kyocera Corp
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Description

本発明は、液晶ディスプレイを製造するための露光装置等の液晶基板保持盤に関し、特に透明または半透明液晶基板を透過した照明光の反射によって露光、アライメントまたはフォーカス調整の精度を損なうことのない液晶基板保持盤及びその製造方法に関するものである。   The present invention relates to a liquid crystal substrate holder such as an exposure apparatus for manufacturing a liquid crystal display, and in particular, a liquid crystal that does not impair the accuracy of exposure, alignment, or focus adjustment due to reflection of illumination light transmitted through a transparent or translucent liquid crystal substrate. The present invention relates to a substrate holder and a method for manufacturing the same.

従来、液晶ディスプレイを製造するための露光装置に使用される液晶基板保持盤は、アルミニウム系の金属からなる母材にアルマイトメッキを施したものや、ステンレスやアルマイト系のセラミックまたはアルマイトセラミックからなる母材にTiC等の被覆を施したものが用いられていた。   Conventionally, a liquid crystal substrate holding disk used in an exposure apparatus for manufacturing a liquid crystal display has a base material made of an aluminum-based metal anodized, a base material made of stainless steel, anodized ceramic, or an anodized ceramic. A material in which a material such as TiC was coated was used.

図6(a)は、従来の液晶基板保持盤の一例であるチャックの概略図を示す斜視図である。   FIG. 6A is a perspective view showing a schematic view of a chuck which is an example of a conventional liquid crystal substrate holding disk.

従来から液晶基板保持盤11は、図6(a)に示すように基体14の上面に、透明または半透明の液晶基板6を保持する支持面12と、その支持面12よりも下がった非支持面13とを形成したものであり、液晶基板6を保持させて、露光用の照明光あるいはアライメントやフォーカス調整のために照明光を照射させていた。そして、液晶基板6に照射された照明光の一部分は、液晶基板6を透過して液晶基板保持盤11に到達するので、照射光の反射をできる限り抑えるためにも、支持面12を形成することによって、液晶基板6に当接する液晶基板保持盤11の面積を少なくし、照射光の多くが液晶基板保持盤11の非支持面12の表面で反射されるようにしていた。   Conventionally, as shown in FIG. 6A, the liquid crystal substrate holder 11 has a support surface 12 for holding the transparent or translucent liquid crystal substrate 6 on the upper surface of the base 14 and an unsupported lower than the support surface 12. The liquid crystal substrate 6 is held, and illumination light for exposure or illumination light is applied for alignment or focus adjustment. And since a part of illumination light irradiated to the liquid crystal substrate 6 permeate | transmits the liquid crystal substrate 6, and reaches | attains the liquid crystal substrate holding | maintenance board 11, in order to suppress reflection of irradiation light as much as possible, the support surface 12 is formed. As a result, the area of the liquid crystal substrate holding plate 11 in contact with the liquid crystal substrate 6 is reduced, and most of the irradiation light is reflected by the surface of the non-supporting surface 12 of the liquid crystal substrate holding plate 11.

これら液晶基板保持盤11は経年的に高精度に保持することが求められる為、一般的には高剛性を有したセラミックスが多用される。特に液晶ディスプレイを製造するための露光装置に搭載される液晶基板保持盤11には、黒色を呈するセラミックスが用いられるようになっていた。   Since these liquid crystal substrate holders 11 are required to be held with high accuracy over time, generally, ceramics having high rigidity are frequently used. In particular, black ceramics have been used for the liquid crystal substrate holding plate 11 mounted on an exposure apparatus for manufacturing a liquid crystal display.

一例を図6(b)に示す。図6(b)は(a)の液晶基板保持盤の一部を拡大した断面図である。図に示すように支持面12、非支持面13の表面にセラミックスからなる被覆層17を形成したものであり、具体的には、基体14の表面上に粗面化した表面をもつ反射率の低いSiCからなる第1の被覆層(不図示)と、この第1の被覆層上に平滑な表面をもつ透明材料Alからなる第2の被覆層(不図示)によって被覆されているものである(特許文献1参照)。 An example is shown in FIG. FIG. 6B is an enlarged cross-sectional view of a part of the liquid crystal substrate holding disk of FIG. As shown in the figure, a coating layer 17 made of ceramic is formed on the surfaces of the support surface 12 and the non-support surface 13, and more specifically, the reflectance of the substrate 14 having a roughened surface. A first coating layer (not shown) made of low SiC and a second coating layer (not shown) made of a transparent material Al 2 O 3 having a smooth surface on the first coating layer. (See Patent Document 1).

さらに、支持面12、非支持面13の表面に非晶質硬質炭素膜の被覆層17を形成し、反射率を低減する方法も提案されている(特許文献2参照)。   Furthermore, a method of reducing the reflectance by forming a coating layer 17 of an amorphous hard carbon film on the surfaces of the support surface 12 and the non-support surface 13 has been proposed (see Patent Document 2).

ところで、上述した反射率を下げる方法として、一般的には液晶基板保持盤11を形成するセラミックスの呈色として、光を反射しやすい白色や乳白色を呈するセラミックスよりも、光を吸収しやすい黒色を呈するセラミックスが適していることは知られているが、特に安価で加工費用の安いアルミナが望まれていた。   By the way, as a method for lowering the reflectance described above, generally, the color of the ceramic forming the liquid crystal substrate holding plate 11 is black, which absorbs light more easily than white or milky white ceramics that easily reflect light. Although it is known that the ceramics to be exhibited are suitable, alumina that is particularly inexpensive and low in processing cost has been desired.

黒色を呈するアルミナの例としては、特許文献3に、Alを主成分とし、Mn、Fe、CoO、Crの成分を含有する黒色アルミナ焼結体が提案されている。また、特許文献4には、LiOが0〜2.5重量%含有する黒色低熱膨張セラミックス焼結体が提案されている。さらに、特許文献4には、Alを主成分とし、FeO、CoO、CuOの成分を含有する着色系セラミックスが提案されている。 As an example of alumina exhibiting black, Patent Document 3 discloses a black alumina sintered body containing Al 2 O 3 as a main component and components of Mn 2 O 3 , Fe 2 O 3 , CoO, and Cr 2 O 3. Proposed. Patent Document 4 proposes a black low thermal expansion ceramic sintered body containing 0 to 2.5% by weight of Li 2 O. Furthermore, Patent Document 4 proposes a colored ceramic containing Al 2 O 3 as a main component and containing Fe 2 O 3 , Co 2 O 3 , and CuO components.

また、特許文献6には、黒色を呈するアルミナセラミックを用いた液晶機器保持盤11の表面に釉薬や導電性物質を含んだ樹脂膜、またはガラス等の透明膜を形成し、さらに、透明膜の表面を粗面化することで、反射率を低減させる手段が提案されている。
特開平5−205997号公報 特開平9―45753号公報 特開平5−238810号公報 特開2001−19540号公報 特開平5−254922号公報 特開2004―128325号公報
In Patent Document 6, a transparent film such as a resin film containing glaze or a conductive substance or glass is formed on the surface of the liquid crystal device holding plate 11 using black alumina ceramic. Means have been proposed for reducing the reflectance by roughening the surface.
Japanese Patent Laid-Open No. 5-205997 JP-A-9-45753 JP-A-5-238810 JP 2001-19540 A JP-A-5-254922 JP 2004-128325 A

しかしながら、液晶基板6に入射した照明光の一部分が、液晶基板保持盤11の表面によって反射されて再び液晶基板6の特定箇所に入射すれば、これによってエッチングを行わないレジストの不要な部分が露光し、アライメントやフォーカス調整の精度を低下させることや、照射光が液晶基板6を透過して、液晶基板保持盤11の表面で反射して、露光した像と同じ像を液晶基板6の下面から照射してしまうことが原因で二重露光が発生したり、線幅が太くなるようなピンボケが発生するといった課題があった。特に、液晶基板6は透明または半透明のガラスであるため、入射光は透過しやすいものであった。   However, if a part of the illumination light incident on the liquid crystal substrate 6 is reflected by the surface of the liquid crystal substrate holding plate 11 and enters the specific portion of the liquid crystal substrate 6 again, an unnecessary portion of the resist that is not etched is exposed. Then, the accuracy of alignment and focus adjustment is lowered, or the irradiated light is transmitted through the liquid crystal substrate 6 and reflected by the surface of the liquid crystal substrate holding plate 11, and the same image as the exposed image is seen from the lower surface of the liquid crystal substrate 6. There have been problems such as double exposure due to the irradiation, and out-of-focus that increases the line width. In particular, since the liquid crystal substrate 6 is transparent or translucent glass, incident light is easily transmitted.

その為、液晶基板6を透過した照明光の反射によって、レジストの不要部分が露光させない低反射率を有する液晶基板保持盤11が望まれていた。   Therefore, there has been a demand for a liquid crystal substrate holding plate 11 having a low reflectance that does not expose unnecessary portions of the resist due to reflection of illumination light transmitted through the liquid crystal substrate 6.

ところで、黒色アルミナを用いた特許文献2、4は、上述のような低反射率に言及しているものではない。反射率を低くしたい場合には反射させる面の面状態を良くすれば反射率が低くなるものであるが、特許文献2、4のような単純に黒色アルミナを採用しても、近年の液晶ディスプレイの大型化に伴い、支持面12よりも鏡面に仕上げることは技術上困難な非支持面13の領域が大きく占めるため、十分にピンボケの発生を抑えることができなかった。   By the way, Patent Documents 2 and 4 using black alumina do not refer to the low reflectance as described above. If it is desired to reduce the reflectivity, the reflectivity can be reduced by improving the surface state of the reflecting surface. With the increase in size, the area of the non-support surface 13 that is technically difficult to finish to a mirror surface rather than the support surface 12 occupies a large area, so that the occurrence of blurring cannot be sufficiently suppressed.

一方、特許文献4のセラミックスの材料特性は、ヤング率が165GPa以下、比剛性が68.5GPa・cm/g以下であり、露光装置の液晶基板保持盤11に使用される基体14には、他の部材への取り付け穴や溝加工など複雑な加工を行うことが多く、マシニング加工などを行う際の材質の変形を防ぐ目的や、それ自体で液晶基板6を支持することが必要となるので、比剛性が低いと高精度加工が困難といった課題があった。 On the other hand, the material characteristics of the ceramics of Patent Document 4 are Young's modulus of 165 GPa or less and specific rigidity of 68.5 GPa · cm 3 / g or less. The substrate 14 used for the liquid crystal substrate holding plate 11 of the exposure apparatus includes: In many cases, complicated processing such as mounting holes and grooves in other members is performed, and it is necessary to support the liquid crystal substrate 6 for the purpose of preventing deformation of the material when performing machining processing or the like. When the specific rigidity is low, there is a problem that high-precision machining is difficult.

本発明は、上述の課題に鑑みてなされたものであり、液晶基板6を透過した照明光の反射によって、レジストの不要な部分が露光し、アライメントやフォーカス調整の精度を低下させることなく、ピンボケを防止することのできる高精度、高精細な加工が可能な、安価で大型な液晶基板保持盤を提供することを目的とするものである。   The present invention has been made in view of the above-described problems. Unnecessary portions of the resist are exposed by the reflection of the illumination light transmitted through the liquid crystal substrate 6, and without deteriorating the accuracy of alignment and focus adjustment. An object of the present invention is to provide an inexpensive and large-sized liquid crystal substrate holding plate capable of preventing high-precision and high-definition processing.

上記の課題を解決するために、本発明の液晶基板保持盤は、基体上面に透明または半透明の液晶基板を保持する支持面と、該支持面よりも下がった非支持面とを有する液晶基板保持盤において、上記基体が比剛性80GPa・cm/g以上の黒色系セラミックスから形成されるとともに、非支持面に低反射率樹脂膜を被覆したことを特徴とするものである。 In order to solve the above-mentioned problems, a liquid crystal substrate holding disk according to the present invention has a support surface for holding a transparent or translucent liquid crystal substrate on the upper surface of a substrate, and a non-support surface that is lower than the support surface. In the holding plate, the base is formed of a black ceramic having a specific rigidity of 80 GPa · cm 3 / g or more, and a non-support surface is covered with a low reflectance resin film.

上記基体及び上記樹脂膜の呈色は、色立体(L,a,b)におけるLが60以下であることを特徴とするものである。 Coloration of the substrate and the resin film, color solid (L *, a *, b *) L * in is characterized in that it is 60 or less.

上記基体がTiO、CoO、MnO、またはFeのいずれか1種以上を含有したアルミナから形成されたことを特徴とするものである。 The substrate is formed of alumina containing at least one of TiO 2 , CoO, MnO 2 , and Fe 2 O 3 .

上記アルミナの純度が90%以上であることを特徴とするものである。   The alumina has a purity of 90% or more.

次に、本発明の液晶基板保持盤の製造方法は、黒色系セラミックスからなる基体を用意し、該基体の上面をブラスト加工にて、透明または半透明液晶基板を保持する支持面と非支持面を形成し、低反射率樹脂膜を基体上面に成膜し、しかる後、上記支持面の低反射率樹脂膜を除去することを特徴とするものである。   Next, according to the method for manufacturing a liquid crystal substrate holding disk of the present invention, a base made of black ceramics is prepared, and a support surface and a non-support surface for holding a transparent or translucent liquid crystal substrate by blasting the upper surface of the base And forming a low reflectance resin film on the upper surface of the substrate, and then removing the low reflectance resin film on the support surface.

上記支持面の低反射率樹脂膜を除去した後に、低反射率樹脂膜の成膜温度よりも100℃以下の熱処理温度で再熱処理を行うことを特徴とするものである。   After removing the low-reflectance resin film on the support surface, re-heat treatment is performed at a heat treatment temperature of 100 ° C. or lower than the film formation temperature of the low-reflectance resin film.

本発明の構成によれば、上記基体の比剛性が80GPa・cm/g以上の黒色系セラミックスから形成されるとともに、非支持面に低反射率樹脂膜を被覆したために、大型の液晶基板保持盤としても、液晶基板を透過する照射光の全反射率を低下させることができるので、照射光が液晶基板に生じるピンボケを防ぎ、高精細な露光を行うことができるとともに、加工時の材質の変形を防ぎ、高精度に加工が可能となる。 According to the configuration of the present invention, since the specific rigidity of the substrate is formed of black ceramics with a power of 80 GPa · cm 3 / g or more and the non-support surface is coated with the low reflectance resin film, The panel can also reduce the total reflectivity of the irradiation light transmitted through the liquid crystal substrate, so that the irradiation light can be prevented from defocusing on the liquid crystal substrate, and high-definition exposure can be performed. Deformation is prevented and processing can be performed with high accuracy.

以下、本発明の実施するための最良の形態について説明する。   Hereinafter, the best mode for carrying out the present invention will be described.

図1は、本発明に係る液晶基板保持盤の一例であるチャックの概略図を示す図で、(a)はその斜視図を、(b)は上記液晶基板保持盤の一部を拡大した断面図をそれぞれ示している。また、図2は、本発明に係る液晶基板保持盤の支持部の一部を拡大して示す斜視図である。   1A and 1B are schematic views of a chuck which is an example of a liquid crystal substrate holding plate according to the present invention. FIG. 1A is a perspective view thereof, and FIG. 1B is an enlarged cross-sectional view of a part of the liquid crystal substrate holding plate. Each figure is shown. FIG. 2 is an enlarged perspective view showing a part of the support portion of the liquid crystal substrate holding disk according to the present invention.

本発明の液晶基板保持盤1は、比剛性が80GPa・cm/g以上の黒色系セラミックスからなる平板状の基体4からなり、その表面に複数の突起200が形成されており、各突起200は液晶基板6に接触してこれを支持する支持面2と、支持面2よりも下がった非支持面3とから構成されている。 The liquid crystal substrate holding disk 1 of the present invention comprises a flat substrate 4 made of black ceramics having a specific rigidity of 80 GPa · cm 3 / g or more, and a plurality of protrusions 200 are formed on the surface thereof. Consists of a support surface 2 that contacts and supports the liquid crystal substrate 6 and a non-support surface 3 that is lower than the support surface 2.

ところで、液晶基板保持盤1において、表面に液晶基板6を支持して上部から露光を行った際、反射率を低くする方が、アライメントやフォーカス調整の精度を低下させることもなく、また、ピンボケを防止する点においても好ましいと考えられる。従って、液晶基板保持盤1の表面が黒色のものを利用し反射率を低下させると良いことは知られているが、本発明では、非支持面3に低反射率樹脂7を被覆することで、ピンボケが十分に防止できるものである。   By the way, in the liquid crystal substrate holder 1, when the liquid crystal substrate 6 is supported on the surface and exposure is performed from above, lowering the reflectivity does not reduce the accuracy of alignment and focus adjustment, and the out of focus. It is considered preferable also from the viewpoint of preventing the above. Therefore, it is known that the surface of the liquid crystal substrate holding plate 1 should be black to reduce the reflectance. However, in the present invention, the non-support surface 3 is coated with the low reflectance resin 7. In addition, it is possible to sufficiently prevent out of focus.

低反射率樹脂膜7の材質としては、ポリイミドやフッ素樹脂でも良いが、好ましくは、黒色系フッ素樹脂がよい。   The material of the low reflectance resin film 7 may be polyimide or fluororesin, but preferably black fluororesin.

また、非支持面3には、低反射率樹脂膜7を膜厚20〜50μm被覆することで、全反射率を大幅に低減することができる。従って、膜厚が20μmよりも薄い場合は、膜の特性上、膜が形成しにくく、また基体4を形成する際、一度、支持面2と非支持面3両方に被覆した後、支持面2上に被覆された低反射樹脂膜7を研削や研磨加工で取り除くが、その際、加工と同時に非支持面に被覆した低反射樹脂膜も剥がれる可能性があるからである。   Further, the total reflectance can be greatly reduced by coating the non-supporting surface 3 with a low reflectance resin film 7 having a thickness of 20 to 50 μm. Therefore, when the film thickness is less than 20 μm, it is difficult to form a film due to the characteristics of the film. When forming the substrate 4, both the support surface 2 and the non-support surface 3 are once coated and then the support surface 2. This is because the low-reflection resin film 7 coated thereon is removed by grinding or polishing, and at this time, the low-reflection resin film coated on the non-supporting surface may be peeled off simultaneously with the processing.

一方、膜厚を50μmより厚くすれば、基体4との線膨張係数の違いから内部応力が発生し、膜の形成が困難となる。   On the other hand, if the film thickness is greater than 50 μm, internal stress is generated due to the difference in the coefficient of linear expansion from the substrate 4, making it difficult to form the film.

支持面2の算術平均粗さ(Ra)を0.3〜1.2μmの範囲とすることが良い。これは、液晶基板6に一番近い支持面2は、反射が低いものが好ましいことからであり、算術平均粗さ(Ra)が0.3μmよりも小さい値であると、照射光が反射する全反射率が高くなり、液晶基板6へのピンボケの原因となる。逆に、算術平均粗さが1.2μmよりも大きい値の場合、全反射率の観点だけでなく、支持面2に接触する液晶基板6の表面に傷を付けてしまうことがあり、液晶基板6の製品としての価値が損なわれてしまう。その為、支持面2の算術平均粗さ(Ra)は0.3〜1.2μmの範囲であることが必要で、好ましくは0.6〜1.0μmの範囲にあることが良い。   The arithmetic average roughness (Ra) of the support surface 2 is preferably in the range of 0.3 to 1.2 μm. This is because the support surface 2 closest to the liquid crystal substrate 6 preferably has a low reflection. When the arithmetic average roughness (Ra) is a value smaller than 0.3 μm, the irradiation light is reflected. The total reflectance is increased, which causes blurring on the liquid crystal substrate 6. On the contrary, when the arithmetic average roughness is a value larger than 1.2 μm, the surface of the liquid crystal substrate 6 in contact with the support surface 2 may be damaged as well as the total reflectance. The value as a product of 6 will be spoiled. Therefore, the arithmetic average roughness (Ra) of the support surface 2 needs to be in the range of 0.3 to 1.2 μm, and preferably in the range of 0.6 to 1.0 μm.

さらに、低反射率樹脂膜7は、特許文献1や2にあるSiCやAlの被覆や、非晶質硬質炭素膜とは異なり、真空容器を使用しないでも成膜ができるので、内部応力の緩和も充分可能となる。 Further, unlike the coating of SiC or Al 2 O 3 in Patent Documents 1 and 2 and the amorphous hard carbon film, the low reflectance resin film 7 can be formed without using a vacuum vessel. Stress can be sufficiently relaxed.

ところで、基体4を形成する黒色系セラミックスとしては、TiO、CoO、MnO、及びFeを含有したアルミナから形成されるのがよく、アルミナ純度が90%以上であることを特徴とし、従来から焼結助剤として用いられる公知なSiO、MgO等を添加して形成される。好ましい範囲としては、Feを0.5〜1.0重量%、MnOを4.0〜5.5重量%、CoOを1.0〜2.0重量%、TiOを0.5〜1.0重量%混合すればよい。 By the way, the black ceramics forming the substrate 4 is preferably formed from alumina containing TiO 2 , CoO, MnO 2 , and Fe 2 O 3 , and the alumina purity is 90% or more. It is formed by adding known SiO 2 , MgO or the like conventionally used as a sintering aid. As preferable ranges, Fe 2 O 3 is 0.5 to 1.0% by weight, MnO 2 is 4.0 to 5.5% by weight, CoO is 1.0 to 2.0% by weight, and TiO 2 is 0.0% by weight. What is necessary is just to mix 5 to 1.0 weight%.

その結果、得られたアルミナは黒色系セラミックスとなり、液晶基板を透過した照明光の多くは反射率の低い黒色の表面に吸収することが可能となる。   As a result, the obtained alumina becomes black ceramics, and much of the illumination light transmitted through the liquid crystal substrate can be absorbed by the black surface with low reflectivity.

さらに、アルミナの純度は90%以上が望ましく、90%を下回れば、ヤング率の低下を招き、液晶基板保持盤1としての面精度を保つことができない。特に比剛性(ヤング率/比重)が液晶基板保持盤1において重要な要素となり、比剛性が80GPa・cm/gより小さい値となり、液晶基板保持盤1が大形化していくのに伴い設計上好ましくない。アルミナ純度が90%以上で、比剛性の高い材料であることから、支持面1を、例えば□600mm以上の大きさの液晶基板保持盤11であってもその平坦度を10μm以下の高精度に仕上げることが可能となる。 Furthermore, the purity of alumina is desirably 90% or more. If the purity is less than 90%, the Young's modulus is lowered, and the surface accuracy as the liquid crystal substrate holding disk 1 cannot be maintained. In particular, the specific rigidity (Young's modulus / specific gravity) is an important factor in the liquid crystal substrate holder 1, and the specific rigidity becomes a value smaller than 80 GPa · cm 3 / g. Not preferable. Since the alumina purity is 90% or higher and the material has a high specific rigidity, even if the support surface 1 is a liquid crystal substrate holding plate 11 having a size of □ 600 mm or more, for example, the flatness thereof is highly accurate to 10 μm or less. It can be finished.

基体4は、ヤング率が300〜350GPa、ビッカース硬度(HV1)12〜14GPa、3点曲げ強度が300〜350MPaと機械的強度の高い材質を得ることができる。   The substrate 4 can be made of a material having a high mechanical strength with a Young's modulus of 300 to 350 GPa, a Vickers hardness (HV1) of 12 to 14 GPa, and a three-point bending strength of 300 to 350 MPa.

さらに、ボイド占有率が4%以下で、平均ボイド径が4μm、見掛け密度が3.8〜3.9g/cmの緻密なアルミナを得ることができる。ここで、ボイド占有率が4%以下であれば、ボイドによって入射した光波が様々な方向に反射する確率が低くなり、拡散反射率を低減することができる。また、平均ボイド径が小さくなる程、同様のことが可能となる。さらに見掛け密度が前記の範囲になることが好ましく、その範囲よりも大きくなれば比剛性を低下させることになり、小さければ、ヤング率の低下を招き、同様に比剛性を低下させる要因になる。 Further, a dense alumina having a void occupancy of 4% or less, an average void diameter of 4 μm, and an apparent density of 3.8 to 3.9 g / cm 3 can be obtained. Here, if the void occupancy is 4% or less, the probability that the light wave incident by the void is reflected in various directions becomes low, and the diffuse reflectance can be reduced. Moreover, the same thing becomes possible, so that an average void diameter becomes small. Furthermore, it is preferable that the apparent density falls within the above range. If the apparent density is larger than the above range, the specific rigidity is lowered. If the apparent density is smaller, the Young's modulus is lowered, and the specific rigidity is similarly reduced.

なお、液晶基板保持盤1に支持される液晶基板6は公知の吸着手段によってこれに吸着される。例えば、大気中で使用する場合は液晶基板6を真空吸着することで吸着することができる。あるいは、単に載置して、液晶基板を機械的に取り付けて保持するのでも構わない。   Note that the liquid crystal substrate 6 supported by the liquid crystal substrate holding plate 1 is adsorbed thereto by a known adsorbing means. For example, when used in the atmosphere, the liquid crystal substrate 6 can be sucked by vacuum suction. Alternatively, it may be simply placed and the liquid crystal substrate is mechanically attached and held.

ところで、基体4及び低反射率樹脂膜7の呈色は、それぞれ黒色系セラミックス及び黒色系樹脂であることが必要であるが、黒色系とは黒色に近い暗い色を呈するものを指し、茶褐色や茶色、赤褐色、緑褐色、群青色、小豆色などの呈色であればよい。好ましくは黒色を呈する色調のものが良い。   By the way, the coloring of the base 4 and the low-reflectance resin film 7 needs to be black ceramics and black resins, respectively. The black type refers to a dark color close to black. Any coloration such as brown, reddish brown, green brown, ultramarine blue, red bean color may be used. The thing of the color tone which exhibits black is preferable.

黒色系として日本の工業分野での色彩管理における色差の測定に最も広く用いられているL表色系を用いるとよい。ここで、本発明に用いられる黒色系セラミックスの色調は上述のL表色系における明度指数がL<60の範囲のものを用いるのが好ましい。明度指数がLが60よりも大きい値の範囲であれば、反射率が高くなり、本発明の構成であっても非支持面3からの反射の影響を受けてしまい、全体的にぼやけた像となる。その為、さらに好ましくは、明度指数がL<40の範囲であることが良い。 As the black system, the L * a * b * color system that is most widely used for color difference measurement in color management in the Japanese industrial field may be used. Here, it is preferable to use the color tone of the black ceramic used in the present invention having a lightness index in the above L * a * b * color system in the range of L * <60. If the lightness index is in a range where L * is larger than 60, the reflectivity is high, and even in the configuration of the present invention, it is affected by the reflection from the non-supporting surface 3 and is totally blurred. Become a statue. Therefore, more preferably, the brightness index is in the range of L * <40.

なお、L表色系において、Lは明度指数、即ち明暗知覚の度合いを示すもので、a及びbは、知覚色度指数、即ち色相と飽和度の二つの属性を総合して考えた視知覚の属性を示すものである。色相a及びbは反射率に影響を与える因子にはあまり関係がなく、一番に影響を与えるのが明度指数Lであることが解っており、この明度指数Lがどのような値になっているのかに注目すればよく、その場合のaの知覚色度指数の依存性が低いことから、黒色だけでなくそれに近い色調であってもよいことが解る。 In the L * a * b * color system, L * indicates a lightness index, that is, the degree of brightness perception, and a * and b * are perceptual chromaticity indices, that is, two attributes of hue and saturation. It shows the attributes of visual perception that are considered together. Hue a * and b * not very relevant to the factors influencing the reflectance, it is known that it affects the most a lightness index L *, what is the lightness index L * It is sufficient to pay attention to whether the value is a value, and since the dependence of the perceptual chromaticity index of a * b * in that case is low, it can be understood that the color tone may be close to that of black.

本発明では日本電色(株)製,色差光沢計(Σ90)を用いて、JIS K 5600−4−5に準じて三刺激値を測定し、CIE1976(L,a,b)色空間の色座標を算出する。 In the present invention, tristimulus values are measured according to JIS K 5600-4-5 using a color difference gloss meter (Σ90) manufactured by Nippon Denshoku Co., Ltd., and CIE 1976 (L * , a * , b * ) color. Calculate the color coordinates of the space.

なお、今回比較する材料が無いため、以下のJIS K 5600−4−5に準じた。   In addition, since there is no material to compare this time, it conformed to the following JIS K 5600-4-5.

:明度を表す指数(0〜100)。0が最も暗く、100が最も明るい値となる
:+側は赤、−側は緑、0は無彩色を表し、絶対値が大きいほど彩度が高くなる
:+側は黄、−側は青、0は無彩色を表し、絶対値が大きいほど彩度が高くなる
液晶基板6への露光の際に使用される照射光としては、紫外線領域の照射光を用いることが多く、一般的に、紫外線領域400nm以下の波長領域で考えれば良いが、安全を見ると、450nmまでの波長領域の照射光が含まれることがあり、450nm以下の照射光で、全反射率が10%以下となることが望まれ、液晶基板6において、ピンボケは発生しない。
L * : Index representing lightness (0 to 100). 0 is the darkest value and 100 is the brightest value a * : red is on the + side, green is on the-side, 0 is an achromatic color, and the saturation is higher as the absolute value is larger b * : yellow is on the + side -Side is blue, 0 represents an achromatic color, and the higher the absolute value, the higher the saturation. As the irradiation light used when exposing the liquid crystal substrate 6, irradiation light in the ultraviolet region is often used, Generally, it may be considered in the wavelength region of 400 nm or less in the ultraviolet region, but for safety reasons, irradiation light in the wavelength region up to 450 nm may be included, and the total reflectance is 10% with the irradiation light of 450 nm or less. It is desired that the liquid crystal substrate 6 be out of focus.

本発明によれば、高精度に加工した支持面2に反射率の低い材料を被覆させる必要がないため、被覆層による精度劣化や、該被覆層の剥離による不具合が無くなり、液晶基板保持盤1に吸着された液晶基板6の平坦度が、高精度に支持されたままで保持することが可能となる。   According to the present invention, since it is not necessary to coat the support surface 2 processed with high accuracy with a material having low reflectance, there is no deterioration in accuracy due to the coating layer, and there is no problem due to peeling of the coating layer. The flatness of the liquid crystal substrate 6 adsorbed on the liquid crystal substrate 6 can be held while being supported with high accuracy.

次に、本発明の製造方法について説明する。   Next, the manufacturing method of this invention is demonstrated.

まず、90重量%以上のAlに、従来から焼結助剤として用いられるSiO、MgO等を添加し、さらに黒色とするため、Fe、MnO、CoO、TiOを湿式にて混合、粉砕した後、スプレードライヤーを用いて噴霧乾燥・造粒を行い、2次原料を作製する。得られた2次原料は、CIP成形またはメカプレス成形にて80〜200MPaの範囲の圧力にて所望の形状に成形する。 First, SiO 2 , MgO or the like conventionally used as a sintering aid is added to 90% by weight or more of Al 2 O 3 , and in order to further blacken, Fe 2 O 3 , MnO 2 , CoO, TiO 2 are added. After mixing and pulverizing in a wet manner, spray drying and granulation are performed using a spray dryer to produce a secondary material. The obtained secondary raw material is molded into a desired shape at a pressure in the range of 80 to 200 MPa by CIP molding or mechanical press molding.

次に、最高温度が1400〜1700℃の範囲となるように酸化雰囲気にて焼成を行うことでアルミナセラミックスを得る。そして、基体4の板状体を形成した後、上面を算術平均粗さが1.2μm以下の範囲に仕上げ、しかる後ブラスト加工にて透明または半透明液晶基板6を保持する支持面2と非支持面3を形成する。   Next, alumina ceramics are obtained by firing in an oxidizing atmosphere so that the maximum temperature is in the range of 1400 to 1700 ° C. Then, after the plate-like body of the substrate 4 is formed, the upper surface is finished so that the arithmetic average roughness is in the range of 1.2 μm or less, and then the support surface 2 that holds the transparent or translucent liquid crystal substrate 6 by the blasting process is formed. The support surface 3 is formed.

そして、支持面2と非支持面3の形成方法は、研削加工やブラスト加工で形成すればよく、表面を粗い状態とすることで、算術平均粗さ(Ra)が1〜2μmの範囲の仕上げ面とすればよい。この範囲であれば、反射光が液晶基板の裏面に逆照射されても、ウエハ表面のレジスト膜を露光し、アライメントあるいはフォーカス調整の障害となることはない。   And the formation method of the support surface 2 and the non-support surface 3 should just be formed by grinding processing or blast processing, and finishes the arithmetic mean roughness (Ra) in the range of 1-2 micrometers by making the surface into a rough state. The surface can be used. Within this range, even if the reflected light is reversely applied to the back surface of the liquid crystal substrate, the resist film on the wafer surface is exposed and does not hinder alignment or focus adjustment.

ところで、算術平均粗さ(Ra)が2μmよりも大きい値の場合、ブラストの砥粒を粗く大きなものにする必要があるが、その場合、ブラスト加工時のマスクのパターンを細かくすることができなかったり、またパターンが破れるといった不具合があった。逆に算術平均粗さ(Ra)が1μmよりも小さい値の場合、ブラストの砥粒を細かいものとする必要があるので加工に時間がかかるといった不具合が生じてしまう。その為、ブラスト加工に使用する砥粒は#200〜#1000の範囲を使用すれば良く、その結果得られる非支持面3の表面は算術平均粗さ(Ra)で1.0〜2.0μmの範囲となる。   By the way, when the arithmetic average roughness (Ra) is a value larger than 2 μm, it is necessary to make the abrasive grains coarse and large, but in this case, the mask pattern at the time of blasting cannot be made fine. And the pattern was broken. On the other hand, when the arithmetic average roughness (Ra) is a value smaller than 1 μm, it is necessary to make the abrasive grains of the blast fine, so that there is a problem that it takes time for processing. Therefore, the abrasive grains used for blasting may be in the range of # 200 to # 1000, and the surface of the non-supporting surface 3 obtained as a result is 1.0 to 2.0 μm in terms of arithmetic average roughness (Ra). It becomes the range.

次に、低反射率樹脂膜7を全面に成膜した後、支持面2の低反射率樹脂膜7を除去をする。具体的に低反射率樹脂膜7の成膜方法の一例を紹介すると、支持面2及び非支持面3をキシレン等の溶剤により又は空焼き手段により脱脂し、次いでショットブラスター等でブラスト処理を行い、該ブラスト処理面に直接若しくは溶射手段により金属溶射層を形成した後、下塗り用樹脂塗料を、スプレーガンを使用して塗布する。   Next, after the low reflectance resin film 7 is formed on the entire surface, the low reflectance resin film 7 on the support surface 2 is removed. Specifically, an example of a method for forming the low-reflectance resin film 7 is introduced. The supporting surface 2 and the non-supporting surface 3 are degreased with a solvent such as xylene or by an air baking means, and then blasted with a shot blaster or the like. After forming a metal sprayed layer directly or by spraying means on the blasted surface, an undercoat resin coating is applied using a spray gun.

その後、熱風循環電気炉等の加熱炉で所定の乾燥条件(250℃/30分)で指触乾燥する下塗りし、下塗り塗料塗布面上に上塗り用低反射率樹脂膜7を、スプレーガンを使用して塗布した後、前記加熱炉において所定の焼成条件(400℃/30〜60分)で焼成して自然冷却する上塗りする。しかる後、照明光を反射する表面である各支持面2は、研削もしくはラッピングによる研磨によって低反射率樹脂膜7を取り除くと同時に高精度加工され、支持面2以外の非支持面3には、低反射率樹脂膜7が残る。   After that, undercoating is performed by touch-drying under a predetermined drying condition (250 ° C / 30 minutes) in a heating furnace such as a hot-air circulating electric furnace, and a low-reflectivity resin film 7 for overcoating is applied on the surface of the undercoating paint using a spray gun Then, it is baked in a predetermined baking condition (400 ° C./30 to 60 minutes) in the heating furnace, and is overcoated for natural cooling. Thereafter, each support surface 2 that is a surface that reflects the illumination light is processed with high precision at the same time as the removal of the low-reflectance resin film 7 by grinding or lapping, and the non-support surface 3 other than the support surface 2 The low reflectance resin film 7 remains.

また、本発明の液晶基板保持盤の製造方法は、上述の支持面2の低反射率樹脂膜7を除去した後、低反射率樹脂膜7の成膜温度よりも100℃以下の熱処理温度で再熱処理を行っても良い。   Further, in the method for manufacturing the liquid crystal substrate holding disk of the present invention, after removing the low reflectance resin film 7 on the support surface 2, the heat treatment temperature is 100 ° C. or lower than the film formation temperature of the low reflectance resin film 7. Reheat treatment may be performed.

この方法を追加した場合、図2に示すように支持面2の端部において、熱処理によって低反射率樹脂膜7が溶けて支持面2になじんで密着力が向上する。また、低反射率樹脂膜7の断面が、液晶基板6との載置面とならないので反射率のコントロールがしやすくなる。   When this method is added, the low reflectivity resin film 7 is melted by heat treatment at the end of the support surface 2 as shown in FIG. Further, since the cross section of the low reflectance resin film 7 does not serve as a mounting surface with the liquid crystal substrate 6, the reflectance can be easily controlled.

なお、本発明の液晶基板保持盤1の基体4は、円板形状や角板等形状を問わず、液晶基板6を保持するのに適した形状であればどのような形状であっても構わない。   The substrate 4 of the liquid crystal substrate holding disk 1 of the present invention may have any shape as long as it is suitable for holding the liquid crystal substrate 6 regardless of the shape of a disc or a square plate. Absent.

以下、本発明の実施例を説明する。   Examples of the present invention will be described below.

(実験例1)
91重量%のAlに、黒色とするため、Fe:0.7重量%、MnO:4.7重量%、CoO:1.6重量%、TiO:0.8重量%の焼結助剤として添加し、さらにSiOやMgOを添加して湿式にて混合し、スプレードライヤーを用いて噴霧乾燥を行った。その後、湿式状態にて混合、粉砕したあと、スプレードライヤーを用いて噴霧乾燥・造粒を行い、2次原料を作製する。得られた2次原料は、CIP成形にて80MPaの圧力にて板状体に成形した。次に1430℃の酸化雰囲気にて焼成し、アルミナ焼結体を得た後、φ100mm×15mmの円盤を製作する。
(Experimental example 1)
91% by weight of Al 2 O 3 for blackening, Fe 2 O 3 : 0.7% by weight, MnO 2 : 4.7% by weight, CoO: 1.6% by weight, TiO 2 : 0.8% by weight % As a sintering aid, SiO 2 and MgO were further added and mixed in a wet manner, and spray drying was performed using a spray dryer. Then, after mixing and pulverizing in a wet state, spray drying and granulation are performed using a spray dryer to produce a secondary raw material. The obtained secondary raw material was molded into a plate-like body at a pressure of 80 MPa by CIP molding. Next, after firing in an oxidizing atmosphere at 1430 ° C. to obtain an alumina sintered body, a disk of φ100 mm × 15 mm is manufactured.

そして、その円盤の表面を算術平均粗さ(Ra)で0.12μm、0.33μm、0.63μm、1.30μmの4種類に仕上げ、基体の上面をブラスト加工にて、支持面と非支持面を形成し、支持面の頂面をφ0.8mmの面積とし、ピッチを6mm、高さ0.5mmにして全面に形成したものを用意し、それぞれの試料に対して、低反射率樹脂膜を成膜したものとしないものを準備し、低反射率樹脂膜を成膜したものに関しては、しかる後、上記支持面の低反射率樹脂膜を除去したこと試料を準備した。尚、低反射率樹脂膜として、黒色系のフッ素樹脂とポリイミド樹脂の2種類被覆し、400℃で焼き付けを行った。   Then, the surface of the disk is finished into four types of arithmetic average roughness (Ra) of 0.12 μm, 0.33 μm, 0.63 μm, and 1.30 μm, and the upper surface of the base is blasted to support and non-support The surface is formed, the top surface of the support surface is φ0.8 mm in area, the pitch is 6 mm, the height is 0.5 mm, and the entire surface is prepared. For samples having a low-reflectance resin film, samples prepared by removing the low-reflectance resin film on the support surface were prepared. In addition, as the low reflectance resin film, two types of black fluororesin and polyimide resin were coated and baked at 400 ° C.

さらに、低反射率樹脂膜を除去した後に、280℃以下の熱処理温度で再熱処理を行う試料も用意した。   Furthermore, after removing the low reflectance resin film, a sample to be reheated at a heat treatment temperature of 280 ° C. or less was also prepared.

そして、それぞれの試料に、レジストを塗布した0.5mmの液晶基板を載置して400nmの露光を照射し、レジストに1μmの線が正常に感光できるのか確認した。   A 0.5 mm liquid crystal substrate coated with a resist was placed on each sample and irradiated with 400 nm exposure, and it was confirmed whether a 1 μm line could be normally exposed to the resist.

結果は表1に示す。

Figure 0004502746
The results are shown in Table 1.
Figure 0004502746

狙いの1±0.1μmの線幅で、正常に感光できたものは「○」とし、1±0.1μmの範囲外で線がピンボケして太くなったり、あるいは、二重に線が感光したものは「×」とした。   If the target line width is 1 ± 0.1 μm and the light is normally exposed, mark “◯”. The line is out of focus and thickened outside the range of 1 ± 0.1 μm, or double lines are exposed. What was done was made into "x".

また、参考として、30mm×8mmの円盤を製作する。そして、その円盤の表面を算術平均粗さ(Ra)で0.12μm、0.33μm、0.63μm、1.30μmの4種類に仕上げ、さらに算術平均粗さ(Ra)1.30μmに仕上げた面に低反射率樹脂膜として、黒色系のフッ素樹脂とポリイミド樹脂を被覆し、計6種類の試料のそれぞれに360nm〜740nmの光を照射し、その反射率を測定した。尚、これらの反射率の測定は、ミノルタ社の分光測色計CM−3700d装置を用いて、波長範囲360nm〜740nmの範囲で測定した。   For reference, a 30 mm × 8 mm disk is manufactured. Then, the surface of the disk was finished into four types of arithmetic average roughness (Ra) of 0.12 μm, 0.33 μm, 0.63 μm, and 1.30 μm, and further finished to arithmetic average roughness (Ra) of 1.30 μm. The surface was covered with a black fluororesin and a polyimide resin as a low-reflectance resin film, and a total of six types of samples were irradiated with light of 360 nm to 740 nm, and the reflectance was measured. These reflectances were measured in the wavelength range of 360 nm to 740 nm using a Minolta spectrophotometer CM-3700d apparatus.

また、このLotと同一の製造方法にて製作されたアルミナであれば、ヤング率が314GPa、3点曲げ強度324MPa、ビッカース硬度(Hv1)12.7GPa、見掛密度3.86g/cmの材料特性が得られ、比剛性が81.3GPa・cm/gとなり、高精度加工が可能な材質を得ることができた。 Further, if the alumina is manufactured by the same manufacturing method as this Lot, the material has a Young's modulus of 314 GPa, a three-point bending strength of 324 MPa, a Vickers hardness (Hv1) of 12.7 GPa, and an apparent density of 3.86 g / cm 3 . The characteristics were obtained, and the specific rigidity was 81.3 GPa · cm 3 / g, and a material capable of high-precision machining could be obtained.

本発明によれば、照射光によるピンボケのない透明または半透明液晶基板を保持するのに好適な液晶基板保持盤を提供することができる。   ADVANTAGE OF THE INVENTION According to this invention, the liquid crystal substrate holding | maintenance board suitable for hold | maintaining a transparent or semi-transparent liquid crystal substrate without the blurring by irradiated light can be provided.

また、全反射光を低反射にする光吸収材として期待できる。   Moreover, it can be expected as a light absorbing material that makes total reflection light low reflection.

本発明に係る液晶基板保持盤の一例であるチャックの概略図を示す図で、(a)はその斜視図を、(b)は上記液晶基板保持盤の一部を拡大した断面図をそれぞれ示している。1A and 1B are schematic views of a chuck which is an example of a liquid crystal substrate holding plate according to the present invention, in which FIG. 1A is a perspective view and FIG. 2B is an enlarged cross-sectional view of a part of the liquid crystal substrate holding plate. ing. 本発明に係る液晶基板保持盤で、(a)はその分解斜視断面図、(b)はその拡大図である。In the liquid crystal substrate holding plate according to the present invention, (a) is an exploded perspective sectional view, and (b) is an enlarged view thereof. 本発明の基体による反射率の測定データを示すグラフである。It is a graph which shows the measurement data of the reflectance by the base | substrate of this invention. 従来の液晶基板保持盤の一例であるチャックの概略図を示す図で、(a)はその斜視図を、(b)は上記液晶基板保持盤の一部を拡大した断面図をそれぞれ示している。It is a figure which shows the schematic of the chuck | zipper which is an example of the conventional liquid crystal substrate holding | maintenance board, (a) is the perspective view, (b) has shown sectional drawing to which a part of said liquid crystal substrate holding board was expanded, respectively. .

符号の説明Explanation of symbols

1、11 …液晶基板保持盤
2、12…支持面
3、13… 非支持面
4、14…基体
5…液晶基板保持装置
6…液晶基板
7…樹脂膜
17…被覆層
DESCRIPTION OF SYMBOLS 1, 11 ... Liquid crystal substrate holding disk 2, 12 ... Support surface 3, 13 ... Non-support surface 4, 14 ... Base | substrate 5 ... Liquid crystal substrate holding device 6 ... Liquid crystal substrate 7 ... Resin film | membrane 17 ... Covering layer

Claims (6)

基体上面に透明または半透明の液晶基板を保持する支持面と、該支持面よりも下がった非支持面とを有する液晶基板保持盤において、上記基体が比剛性80GPa・cm/g以上の黒色系セラミックスから形成されるとともに、非支持面に低反射率樹脂膜を被覆したことを特徴とする液晶基板保持盤。 In a liquid crystal substrate holder having a support surface for holding a transparent or translucent liquid crystal substrate on the upper surface of the substrate and a non-support surface that is lower than the support surface, the substrate is a black having a specific rigidity of 80 GPa · cm 3 / g or more. A liquid crystal substrate holding plate, characterized in that it is made of a ceramic and has a non-supporting surface coated with a low reflectance resin film. 上記基体及び上記樹脂膜の呈色は、色立体(L,a,b)におけるLが60以下であることを特徴とする請求項1記載の液晶基板保持盤。 Coloration of the substrate and the resin film, color solid (L *, a *, b *) liquid crystal substrate holding plate according to claim 1, wherein the L * is 60 or less in the. 上記基体がTiO、CoO、MnO、またはFeのいずれか1種以上を含有したアルミナから形成されたことを特徴とする請求項1又は2に記載の液晶基板保持盤。 3. The liquid crystal substrate holding disk according to claim 1, wherein the substrate is made of alumina containing at least one of TiO 2 , CoO, MnO 2 , and Fe 2 O 3 . 上記アルミナの純度が90%以上であることを特徴とする請求項1〜3のいずれかに記載の液晶基板保持盤。 The liquid crystal substrate holder according to any one of claims 1 to 3, wherein the alumina has a purity of 90% or more. 黒色系セラミックスからなる基体を用意し、該基体の上面をブラスト加工にて、透明または半透明液晶基板を保持する支持面と非支持面を形成し、低反射率樹脂膜を基体上面に成膜し、しかる後、上記支持面の低反射率樹脂膜を除去することを特徴とする液晶基板保持盤の製造方法。 A base made of black ceramics is prepared, and the upper surface of the base is blasted to form a support surface and a non-support surface for holding a transparent or translucent liquid crystal substrate, and a low reflectance resin film is formed on the upper surface of the substrate Thereafter, the low reflectance resin film on the support surface is removed. 上記支持面の低反射率樹脂膜を除去した後に、低反射率樹脂膜の成膜温度よりも100℃以下の熱処理温度で再熱処理を行うことを特徴とする請求項5に記載の液晶基板保持盤の製造方法。 6. The liquid crystal substrate holding device according to claim 5, wherein after the low-reflectance resin film on the support surface is removed, re-heat treatment is performed at a heat treatment temperature of 100 ° C. or lower than the film formation temperature of the low-reflectance resin film. Board manufacturing method.
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WO2014103714A1 (en) 2012-12-25 2014-07-03 京セラ株式会社 Attachment member and attachment device using the same
JP6608750B2 (en) * 2016-03-30 2019-11-20 京セラ株式会社 Mounting member
JP6659493B2 (en) * 2016-07-29 2020-03-04 京セラ株式会社 Mounting member
JP7159383B2 (en) * 2020-11-27 2022-10-24 キヤノン株式会社 Substrate holder
WO2023188480A1 (en) * 2022-03-30 2023-10-05 日本碍子株式会社 Member for semiconductor manufacturing device

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