KR900001408B1 - Semiconductor radiation device - Google Patents

Semiconductor radiation device Download PDF

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Publication number
KR900001408B1
KR900001408B1 KR1019870015580A KR870015580A KR900001408B1 KR 900001408 B1 KR900001408 B1 KR 900001408B1 KR 1019870015580 A KR1019870015580 A KR 1019870015580A KR 870015580 A KR870015580 A KR 870015580A KR 900001408 B1 KR900001408 B1 KR 900001408B1
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South Korea
Prior art keywords
light emitting
substrate
wiring
emitting device
thin film
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KR1019870015580A
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Korean (ko)
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KR890011122A (en
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김번중
김준영
이용운
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삼성전자 주식회사
강진구
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Priority to KR1019870015580A priority Critical patent/KR900001408B1/en
Publication of KR890011122A publication Critical patent/KR890011122A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Abstract

The light emitting device (6) used in a photocopier or printer is placed on a substrate (1) through a wire (4). The one edge of the substrate (2) is cut into a slope with a certain angle and coated with a metal thin layer of Al, Cu, Ag, or a dielectric thin layer of Si3N4, SiO2, CeO3. The light emitting region of the light emitting device is faced to the mirror face (2) to reflect the light parallel with a direction of the wire (3) so that the device can be installed in a limitted space.

Description

반도체 발광장치Semiconductor light emitting device

제1도는 종래의 반도체 발광장치의 사시도.1 is a perspective view of a conventional semiconductor light emitting device.

제2도는 본 발명의 사시도.2 is a perspective view of the present invention.

제3도는 제2도의 선(A-A)에 대한 확대단면도.3 is an enlarged cross-sectional view of the line A-A of FIG.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1, 11 : 기판 2 : 거울면1, 11: substrate 2: mirror surface

3, 13 : 배선면 4, 14 : 배선3, 13: wiring surface 4, 14: wiring

5, 15 : 발광부 6, 16 : 발광소자5, 15: light emitting portion 6, 16: light emitting element

7, 17 : 공통전극 18 : 연결와이어7, 17: common electrode 18: connection wire

19 : 발광소자 접착용패드19: light emitting device adhesive pad

본 발명은 복사기나 프린터등에 적용 가능한 반도체 발광장치에 관한 것이다.The present invention relates to a semiconductor light emitting device applicable to a copying machine, a printer, and the like.

광선을 선상으로 방출시키기 위해 복사기, 프린터등에 사용되는 종래의 반도체 발광장치는 제1도에서 도시한 바와 같이 배선면(13)에 수직인 방향으로 광선이 방출되도록 구성되어 있으므로 복사기나 프린터등의 감광드럼에 삽일할때에는 발광장치를 감광면에 평행하게 이동시켜 콘넥터나 지그(Zig)에 부착하여야 하는바, 프린터와 같이 감Conventional semiconductor light emitting devices used in photocopiers, printers, and the like to emit light beams are configured to emit light in a direction perpendicular to the wiring surface 13 as shown in FIG. When inserting into the drum, the light emitting device should be moved in parallel with the photosensitive surface and attached to the connector or jig.

본 발명의 목적은 기판의 일측모서리를 임의의 각도로 경사지게하여 알루미늄, 구리, 또는 은과 같은 금속박막이나, 질화규소, 산화규소, 산화세륨과 같은 유전체 박막으로 코딩된 거울면을 형성함으로써, 발광소자의 발광부에서 방출된 광선을 기판의 배선면과 평행하게 반사시키기 위한 반도체 발광장치를 제공하는데 있다.An object of the present invention is to incline one edge of a substrate to an arbitrary angle to form a mirror surface coded by a metal thin film such as aluminum, copper, or silver, or a dielectric thin film such as silicon nitride, silicon oxide, or cerium oxide. A semiconductor light emitting device is provided for reflecting light rays emitted from a light emitting portion of a substrate in parallel with a wiring surface of a substrate.

제2도는 본 발명에 따른 반도체 발광장치의 사시도로서 기판(1)의 한측 모서리를 소의 각도로 가공하여 광선을 반사시키는 거울면(2)을 형성하고, 기판(1)의 상부인 배선면(3)에서 다수의 배선(4) 을 성형하며, 배선(4)위에는 다수의 발광부(5)를 갖는 다수의 발광소자(6)을 페이스다운(Face-Down) 접착하여 구성한 것인 바, 미설명 부호 7은 발광소자의 공통전극이다.FIG. 2 is a perspective view of a semiconductor light emitting device according to the present invention, wherein one side edge of the substrate 1 is processed at a small angle to form a mirror surface 2 for reflecting light rays, and a wiring surface 3 which is an upper portion of the substrate 1. ) And forming a plurality of wirings 4, and a plurality of light emitting elements 6 having a plurality of light emitting units 5 are face-down bonded to the wirings 4, which will not be described. Reference numeral 7 is a common electrode of the light emitting element.

기판(1)은 일반적인 세라믹 또는 유리와 같은 절연제로서, 알루미늄, 구리등의 열싱크(Heat-Sink)(도시하지 않았음)위에 절연막이 코팅된 기판인바, 이러한 기판(1)상의 배선면(3)에는 통상적인 사진식각, 전사등의 방법에 의해 배선(4)이 형성된다.The substrate 1 is an insulating material such as a ceramic or glass in general, and is a substrate coated with an insulating film on a heat sink (not shown) such as aluminum or copper. In 3), the wiring 4 is formed by a conventional method such as photolithography, transfer or the like.

또한, 기판(1)에는 한측 모서리를 임의의 각도로 경사지게 한뒤 마스크공정을 이용하여 금속등을 증착하고 국부적으로 코팅한 거울면(2)을 형성한다. 이때 거울면(2)은 알루미늄, 구리 또는 은과 같은 반사율이 양호한 금속박막이나, 질화규소(Si3, N4), 산화규소(SiO2), 또는 산화세륨(CeO3)과 같은 유전체 박막으로 코팅할 수도 있다.In addition, one side edge is inclined at an arbitrary angle on the substrate 1, and then a mirror surface 2 is formed by depositing a metal or the like using a mask process and locally coating it. In this case, the mirror surface 2 is coated with a thin metal film having good reflectivity such as aluminum, copper or silver, or a dielectric thin film such as silicon nitride (Si 3 , N 4 ), silicon oxide (SiO 2 ), or cerium oxide (CeO 3 ). You may.

따라서, 본 발명은 이와 같이 형성된 기판(1)에 발광부(5)를 구비한 발광소자(6)Therefore, the present invention provides the light emitting element 6 having the light emitting portion 5 in the substrate 1 thus formed.

이와 같이 본 발명은 기판(1)의 거울면(2)의 각도를 임으로 조절하고, 발광소자(6)의 발광부(5)를 기판(1)과 대향되게(Face-Down) 구성함으로써 와이어(19)의 연결이 필요없이 전체의 구조를 간략화 하였으며, 또한 협소한 곳에 설치되어도 발광소자의 광선을 임의의 방향으로 설정할 수 있는 특징으로 지닌 것이다.As described above, according to the present invention, the angle of the mirror surface 2 of the substrate 1 is arbitrarily adjusted, and the light emitting portion 5 of the light emitting element 6 is configured to face the substrate 1 so that the wire ( 19) The whole structure is simplified without the need of the connection of 19), and the light beam of the light emitting device can be set in any direction even when installed in a narrow place.

Claims (2)

기판(1)의 한측모서리를 배선면(3)에 대해 소정의 각도로 가공하여 광선을 반사시키기 위한 금속박막이나 유전체박막이 코팅된 거울면(2)을 형성하고, 상기 기판의 배선면(3)에 배선(4)을 성형하며, 배선(4)위에는 발광부(5)를 구비한 발광소자(6)을 설치하되, 발광부(5)를 기울면(2)과 대향되게 위치시킴을 특징으로 하는 반도체 발광장치.One side edge of the substrate 1 is processed at a predetermined angle with respect to the wiring surface 3 to form a mirror surface 2 coated with a metal thin film or a dielectric thin film for reflecting light rays, and the wiring surface 3 of the substrate. A wiring 4 is formed on the wiring 4, and the light emitting element 6 having the light emitting portion 5 is provided on the wiring 4, and the light emitting portion 5 is positioned to face the inclined portion 2. A semiconductor light emitting device. 제1항에 있어서, 상기의 금속박막은 알루미늄, 구리 또는 은이고, 상기의 유전체박막은 질화규소, 산화규소, 또는 산화세륨임을 특징으로 하는 반도체 발광장치.The semiconductor light emitting device of claim 1, wherein the metal thin film is aluminum, copper, or silver, and the dielectric thin film is silicon nitride, silicon oxide, or cerium oxide.
KR1019870015580A 1987-12-31 1987-12-31 Semiconductor radiation device KR900001408B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019870015580A KR900001408B1 (en) 1987-12-31 1987-12-31 Semiconductor radiation device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019870015580A KR900001408B1 (en) 1987-12-31 1987-12-31 Semiconductor radiation device

Publications (2)

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KR890011122A KR890011122A (en) 1989-08-12
KR900001408B1 true KR900001408B1 (en) 1990-03-09

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KR1019870015580A KR900001408B1 (en) 1987-12-31 1987-12-31 Semiconductor radiation device

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KR890011122A (en) 1989-08-12

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