CN104064593A - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN104064593A
CN104064593A CN201310731532.8A CN201310731532A CN104064593A CN 104064593 A CN104064593 A CN 104064593A CN 201310731532 A CN201310731532 A CN 201310731532A CN 104064593 A CN104064593 A CN 104064593A
Authority
CN
China
Prior art keywords
gate electrode
semiconductor layer
semiconductor
semiconductor device
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201310731532.8A
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English (en)
Chinese (zh)
Inventor
齐藤泰伸
藤本英俊
吉冈启
内原士
安本恭章
梁濑直子
小野祐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of CN104064593A publication Critical patent/CN104064593A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN201310731532.8A 2013-03-22 2013-12-26 半导体装置 Pending CN104064593A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-059337 2013-03-22
JP2013059337A JP2014187085A (ja) 2013-03-22 2013-03-22 半導体装置

Publications (1)

Publication Number Publication Date
CN104064593A true CN104064593A (zh) 2014-09-24

Family

ID=51552223

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310731532.8A Pending CN104064593A (zh) 2013-03-22 2013-12-26 半导体装置

Country Status (2)

Country Link
JP (1) JP2014187085A (enrdf_load_stackoverflow)
CN (1) CN104064593A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107393954A (zh) * 2017-08-02 2017-11-24 电子科技大学 一种GaN异质结纵向场效应管
CN109461655A (zh) * 2018-09-21 2019-03-12 中国电子科技集团公司第五十五研究所 具有多栅结构的氮化物高电子迁移率晶体管制造方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6646363B2 (ja) * 2015-06-02 2020-02-14 株式会社アドバンテスト 半導体装置
US10276681B2 (en) 2016-02-29 2019-04-30 Infineon Technologies Austria Ag Double gate transistor device and method of operating
US10530360B2 (en) 2016-02-29 2020-01-07 Infineon Technologies Austria Ag Double gate transistor device and method of operating
JP7021034B2 (ja) * 2018-09-18 2022-02-16 株式会社東芝 半導体装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070102727A1 (en) * 2005-11-02 2007-05-10 Sharp Kabushiki Kaisha Field-effect transistor
CN101789445A (zh) * 2008-12-22 2010-07-28 三垦电气株式会社 半导体装置
CN102201441A (zh) * 2010-03-26 2011-09-28 三垦电气株式会社 半导体装置
JP2012028705A (ja) * 2010-07-27 2012-02-09 Sumitomo Electric Ind Ltd 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070102727A1 (en) * 2005-11-02 2007-05-10 Sharp Kabushiki Kaisha Field-effect transistor
CN101789445A (zh) * 2008-12-22 2010-07-28 三垦电气株式会社 半导体装置
CN102201441A (zh) * 2010-03-26 2011-09-28 三垦电气株式会社 半导体装置
JP2012028705A (ja) * 2010-07-27 2012-02-09 Sumitomo Electric Ind Ltd 半導体装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107393954A (zh) * 2017-08-02 2017-11-24 电子科技大学 一种GaN异质结纵向场效应管
CN107393954B (zh) * 2017-08-02 2019-11-01 电子科技大学 一种GaN异质结纵向场效应管
CN109461655A (zh) * 2018-09-21 2019-03-12 中国电子科技集团公司第五十五研究所 具有多栅结构的氮化物高电子迁移率晶体管制造方法
CN109461655B (zh) * 2018-09-21 2022-03-11 中国电子科技集团公司第五十五研究所 具有多栅结构的氮化物高电子迁移率晶体管制造方法

Also Published As

Publication number Publication date
JP2014187085A (ja) 2014-10-02

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