CN104051542B - 有机发光显示装置及其薄膜晶体管 - Google Patents

有机发光显示装置及其薄膜晶体管 Download PDF

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Publication number
CN104051542B
CN104051542B CN201410284140.6A CN201410284140A CN104051542B CN 104051542 B CN104051542 B CN 104051542B CN 201410284140 A CN201410284140 A CN 201410284140A CN 104051542 B CN104051542 B CN 104051542B
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Chinese (zh)
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CN104051542A (zh
Inventor
寇浩
鲁佳浩
夏先海
陈鸣
陈一鸣
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EverDisplay Optronics Shanghai Co Ltd
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EverDisplay Optronics Shanghai Co Ltd
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Priority to CN201410284140.6A priority Critical patent/CN104051542B/zh
Priority to TW103126339A priority patent/TWI562339B/zh
Publication of CN104051542A publication Critical patent/CN104051542A/zh
Priority to KR1020140191712A priority patent/KR101602793B1/ko
Priority to JP2015098904A priority patent/JP6505499B2/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/84—Parallel electrical configurations of multiple OLEDs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
CN201410284140.6A 2014-06-23 2014-06-23 有机发光显示装置及其薄膜晶体管 Active CN104051542B (zh)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN201410284140.6A CN104051542B (zh) 2014-06-23 2014-06-23 有机发光显示装置及其薄膜晶体管
TW103126339A TWI562339B (en) 2014-06-23 2014-08-01 Organic light-emitting display device and thin-film transistor thereof
KR1020140191712A KR101602793B1 (ko) 2014-06-23 2014-12-29 유기 발광 표시장치 및 그 박막 트랜지스터
JP2015098904A JP6505499B2 (ja) 2014-06-23 2015-05-14 有機発光ディスプレイ装置及びその薄膜トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410284140.6A CN104051542B (zh) 2014-06-23 2014-06-23 有机发光显示装置及其薄膜晶体管

Publications (2)

Publication Number Publication Date
CN104051542A CN104051542A (zh) 2014-09-17
CN104051542B true CN104051542B (zh) 2016-10-05

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CN201410284140.6A Active CN104051542B (zh) 2014-06-23 2014-06-23 有机发光显示装置及其薄膜晶体管

Country Status (4)

Country Link
JP (1) JP6505499B2 (ja)
KR (1) KR101602793B1 (ja)
CN (1) CN104051542B (ja)
TW (1) TWI562339B (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102421577B1 (ko) * 2016-04-05 2022-07-18 삼성디스플레이 주식회사 디스플레이 장치
JP2020120080A (ja) * 2019-01-28 2020-08-06 株式会社村田製作所 半導体素子

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1442838A (zh) * 2002-03-05 2003-09-17 三洋电机株式会社 在接触孔中形成的配线分层结构，配线分层结构的制作方法，以及具有该配线分层结构的显示装置
CN1967803A (zh) * 2005-11-17 2007-05-23 株式会社半导体能源研究所 显示器件及其制造方法
WO2011148409A1 (ja) * 2010-05-24 2011-12-01 パナソニック株式会社 薄膜半導体装置、表示装置及び薄膜半導体装置の製造方法
CN102931211A (zh) * 2011-08-10 2013-02-13 三星显示有限公司 有机发光显示装置及其制造方法
CN103003860A (zh) * 2010-07-21 2013-03-27 株式会社神户制钢所 显示装置用Cu合金膜和显示装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0736052A (ja) * 1993-07-23 1995-02-07 Hitachi Ltd Ａｌ合金層を配線層として備える基板とその製造方法
JPH0826889A (ja) * 1994-07-15 1996-01-30 Fujitsu Ltd 金属膜の形成方法および配線用金属膜
JP2001142092A (ja) 1999-11-10 2001-05-25 Hitachi Ltd 液晶表示装置とその製造方法
KR100527195B1 (ko) * 2003-07-25 2005-11-08 삼성에스디아이 주식회사 유기전계 발광표시장치
JP4840173B2 (ja) * 2007-02-07 2011-12-21 三菱マテリアル株式会社 熱欠陥発生がなくかつ密着性に優れた液晶表示装置用積層配線および積層電極並びにそれらの形成方法
US7633164B2 (en) * 2007-04-10 2009-12-15 Tohoku University Liquid crystal display device and manufacturing method therefor
JP5303155B2 (ja) * 2008-02-20 2013-10-02 株式会社ジャパンディスプレイ 液晶表示装置とその製造方法
JP5282085B2 (ja) * 2008-04-15 2013-09-04 株式会社アルバック 薄膜トランジスタ、薄膜トランジスタの製造方法
JP2010065317A (ja) * 2008-08-14 2010-03-25 Kobe Steel Ltd 表示装置およびこれに用いるＣｕ合金膜
KR101627518B1 (ko) * 2009-12-17 2016-06-08 엘지디스플레이 주식회사 횡전계 방식 액정표시장치 및 그 제조 방법
US8846437B2 (en) * 2010-10-01 2014-09-30 Applied Materials, Inc. High efficiency thin film transistor device with gallium arsenide layer
KR101298612B1 (ko) * 2010-10-12 2013-08-26 엘지디스플레이 주식회사 횡전계 방식 액정표시장치용 어레이기판 및 그 제조방법
KR20130007053A (ko) * 2011-06-28 2013-01-18 삼성디스플레이 주식회사 유기발광표시장치 및 그 제조방법
KR20130111874A (ko) * 2012-04-02 2013-10-11 삼성디스플레이 주식회사 박막 트랜지스터, 이를 포함하는 박막 트랜지스터 표시판 및 표시 장치, 그리고 박막 트랜지스터의 제조 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1442838A (zh) * 2002-03-05 2003-09-17 三洋电机株式会社 在接触孔中形成的配线分层结构，配线分层结构的制作方法，以及具有该配线分层结构的显示装置
CN1967803A (zh) * 2005-11-17 2007-05-23 株式会社半导体能源研究所 显示器件及其制造方法
WO2011148409A1 (ja) * 2010-05-24 2011-12-01 パナソニック株式会社 薄膜半導体装置、表示装置及び薄膜半導体装置の製造方法
CN103003860A (zh) * 2010-07-21 2013-03-27 株式会社神户制钢所 显示装置用Cu合金膜和显示装置
CN102931211A (zh) * 2011-08-10 2013-02-13 三星显示有限公司 有机发光显示装置及其制造方法

Also Published As

Publication number Publication date
TWI562339B (en) 2016-12-11
TW201601294A (zh) 2016-01-01
KR101602793B1 (ko) 2016-03-11
KR20150146370A (ko) 2015-12-31
JP6505499B2 (ja) 2019-04-24
JP2016009186A (ja) 2016-01-18
CN104051542A (zh) 2014-09-17

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Address after: 201506, No. nine, No. 1568, Jinshan Industrial Zone, Shanghai, Jinshan District

Patentee after: Shanghai Hehui optoelectronic Co., Ltd

Address before: 201500, building two, building 100, 1, Jinshan Industrial Road, 208, Shanghai, Jinshan District

Patentee before: EverDisplay Optronics (Shanghai) Ltd.