CN104051542B - Organic light-emitting display device and thin film transistor (TFT) thereof - Google Patents
Organic light-emitting display device and thin film transistor (TFT) thereof Download PDFInfo
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- CN104051542B CN104051542B CN201410284140.6A CN201410284140A CN104051542B CN 104051542 B CN104051542 B CN 104051542B CN 201410284140 A CN201410284140 A CN 201410284140A CN 104051542 B CN104051542 B CN 104051542B
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- 239000010409 thin film Substances 0.000 title claims abstract description 38
- 239000007769 metal material Substances 0.000 claims abstract description 117
- 239000011248 coating agent Substances 0.000 claims abstract description 106
- 238000000576 coating method Methods 0.000 claims abstract description 106
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 229910052751 metal Inorganic materials 0.000 claims abstract description 40
- 239000002184 metal Substances 0.000 claims abstract description 40
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 239000010949 copper Substances 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 20
- 230000008859 change Effects 0.000 claims description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 17
- 229910052802 copper Inorganic materials 0.000 claims description 17
- 239000010936 titanium Substances 0.000 claims description 16
- 239000003990 capacitor Substances 0.000 claims description 12
- 229910052719 titanium Inorganic materials 0.000 claims description 11
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- 229910052750 molybdenum Inorganic materials 0.000 claims description 9
- 239000011733 molybdenum Substances 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 claims description 4
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 110
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229920001621 AMOLED Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
- H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/84—Parallel electrical configurations of multiple OLEDs
Abstract
The present invention provides a kind of organic light-emitting display device and thin film transistor (TFT) thereof, it is characterised in that described thin film transistor (TFT) includes: form the semiconductor layer on substrate；Gate electrode；And the source electrode that is connected with described semiconductor layer and drain electrode, wherein, described gate electrode, at least one electrode in described source electrode and described drain electrode is formed by the coat of metal with the first coating and the second coating, described second coating is in the side away from described substrate of described first coating, described first coating is formed by the gradient layer with the first metal material and the second metal material changed along thickness direction Concentraton gradient, described second coating has at least two to layer, described layer is alternately stacked by one layer of described first metal material and one layer of described second metal material, each described thickness to described first metal material layer of layer is identical, each described thickness to described second metal material layer of layer is the most identical.
Description
Technical field
The present invention relates to display, particularly relate to organic light-emitting display device and thin film transistor (TFT) thereof.
Background technology
At present, substrate or base material may be used to manufacture various electronic product, such as glass substrate transparent substrates and may be used to manufacture
Display floater.As a example by large-sized OLED (Organic LE Display, OLED) panel, it can cut into
Multiple organic luminescence display units.Organic luminescence display unit at least includes an anode electrode plate, a luminescent layer and negative electrode electricity
Pole plate；Wherein, luminescent layer is sandwiched between anode electrode plate and cathode electrode plate formation one " sandwich " (sandwich) structure.
Under forward voltage drives, anode electrode plate injects hole to luminescent layer, and cathode electrode plate injects electronics to luminescent layer.Inject
Hole and electronics meet combination in luminescent layer, make electronics be dropped back to ground state by excited state, and by excess energy with the form of light wave
Radiation disengages.
Specifically, in active matrix organic light emitting diode display, thin film transistor (TFT) is typically used as at each pixel
Switching device.
Recently there is the trend of the size increasing organic light emitting diode display.Therefore, with greater need for higher resolution
Rate.There is the RC delay that the bigger organic light emitting diode display of higher resolution have to reduce, can be by by cloth
The resistance of line minimizes the RC realizing reducing to postpone.
Generally, molybdenum (Mo) and the resistivity aluminum (Al) less than 5.5 μ Ω cm that resistivity is less than 12 μ Ω cm are used as electrode
Or the wiring of thin film transistor (TFT).Owing to the resistivity of these metals is high, have relatively so these metals are prone to make it difficult to manufacture
The bigger organic light emitting diode display of high resolution.Accordingly, because the resistivity of copper (Cu) is less than 2.2 μ Ω cm, institute
With for copper is studied as selectable wiring and electrode.
But, although copper can be applied and all electrodes in the gate electrode of thin film transistor (TFT), source electrode and drain electrode, but
It is when copper is applied to gate electrode, the poor adhesive force of copper and the substrate of glass being formed with thin film transistor (TFT).Additionally, when copper is answered
With during with source electrode and drain electrode, copper can be in silicon (Si) film reaction as buffer.Therefore, when copper is applied to gate electrode,
When source electrode and/or drain electrode, it is impossible to use copper with monolayer.
Summary of the invention
The present invention provides a kind of thin film transistor (TFT), it is characterised in that including: form the semiconductor layer on substrate；Grid electricity
Pole；And the source electrode that is connected with described semiconductor layer and drain electrode, wherein, described gate electrode, described source electrode electricity
At least one electrode in pole and described drain electrode is formed by the coat of metal with the first coating and the second coating, institute
Stating second coating side away from described substrate at described first coating, described first coating is by having along thickness direction concentration
First metal material of graded and the gradient layer of the second metal material are formed, and described second coating has at least two pair
Layer, described is alternately stacked by one layer of described first metal material and one layer of described second metal material layer, each described to layer
The thickness of described first metal material layer identical, each described thickness to described second metal material layer of layer is the most identical.
Preferably, the content of described first metal material is gradually increased away from described substrate, described second metal material
Content is gradually increased towards described substrate.
Preferably, described Concentraton gradient linearly changes.
Preferably, described Concentraton gradient is nonlinear change.
Preferably, described first metal material is as the conductor material of at least one electrode.
Preferably, described first metal material is copper.
Preferably, described second metal material is as the material on the barrier layer adhering to described substrate.
Preferably, described second metal material is one or more in following material: molybdenum；Titanium；Aluminum；Nickel；Or oxidation
Indium stannum.
Preferably, the thickness of described first coating account for the described coat of metal thickness 1/1st to two/3rd.
Preferably, each described thickness to layer isExtremely
Preferably, described substrate is glass substrate.
According to another aspect of the invention, a kind of organic light-emitting display device is also provided for, it is characterised in that including: formed
Grid wiring on substrate connects up with data；Connect up, with described data, the pixel portion formed by described grid wiring；And
Being arranged on the pixel in described pixel portion, wherein, during described grid wiring connects up with described data, at least one connects up by having
The coat of metal having the first coating and the second coating is formed, described second coating at described first coating away from described substrate
Side, described first coating is by the first metal material having along the change of thickness direction Concentraton gradient and the second metal material
Gradient layer formed, described second coating has at least two to layer, described to layer by one layer of described first metal material and one layer
Described second metal material is alternately stacked, and each described thickness to described first metal material layer of layer is identical, each described
The most identical to the thickness of described second metal material layer of layer, wherein, described pixel includes transistor, capacitor and organic light emission
Element, the wiring of described data includes at least one in the source electrode of described transistor and the drain electrode of described transistor,
Described grid wiring includes the gate electrode of described transistor.
Preferably, the content of described first metal material is gradually increased away from described substrate, described second metal material
Content is gradually increased towards described substrate.
Preferably, described Concentraton gradient linearly changes.
Preferably, described Concentraton gradient is nonlinear change.
Preferably, described first metal material is as the conductor material of at least one electrode.
Preferably, described first metal material is copper.
Preferably, described second metal material is as the material on the barrier layer adhering to described substrate.
Preferably, described second metal material is one or more in following material: molybdenum；Titanium；Aluminum；Nickel；Or oxidation
Indium stannum.
Preferably, the thickness of described first coating account for the described coat of metal thickness 1/1st to two/3rd.
Preferably, each described thickness to layer isExtremely
Preferably, described substrate is glass substrate.
The present invention utilizes two kinds of metal materials and changes coated metal electrode approach to reduce conductor resistance.The present invention is leaning on
The part of nearly substrate uses graded metal coating to form the first coating, and uses multilamellar alternating growth shape on graded metal coating
Become the second gradient layer.Wherein, two kinds of metal materials are ensureing barrier layer respectively as conductor material and barrier material, the present invention
Reduce resistance on the premise of function and adjust the effect of after etching speed.
Accompanying drawing explanation
Describing its example embodiment in detail by referring to accompanying drawing, above and other feature of the present invention and advantage will become
Become apparent from.
Figure 1A illustrates the layout of organic light-emitting display device according to embodiments of the present invention；
Figure 1B illustrates the layout of unit picture element in organic light-emitting display device according to embodiments of the present invention；
Fig. 2 illustrates the cross-sectional configuration of organic light-emitting display device according to embodiments of the present invention；And
Fig. 3 illustrates the cross-sectional configuration of the coat of metal of organic light-emitting display device according to embodiments of the present invention.
Reference
110 gate lines
120 data wires
130 power lines
140 unit picture elements
155 openings
150 pixel electrodes
157 through holes
160 thin film transistor (TFT)s
161 semiconductor layers
163 gate electrodes
165 source electrodes
167 drain electrodes
164,166,168 contact hole
180 thin film transistor (TFT)s
181 semiconductor layers
183 gate electrodes
185 source electrodes
187 drain electrodes
184,186 contact hole
170 electric capacity
171 bottom electrodes
Electrode on 173
200 substrates
210 cushions
230 gate insulators
250 interlayer insulating films
270 passivation layers
247 gate lines
267 data wires
283 organic thin film layers
290 pixel confining layers
201 thin film transistor (TFT)s
221 source areas
223 drain regions
241 gate electrodes
261 source electrodes
263 drain electrodes
251,253 contact hole
203 capacitors
245 bottom electrodes
Electrode on 265
205 Organic Light Emitting Diodes
281 bottom electrodes
Electrode on 285
275 through holes
295 openings
202 first coating
204 second coating
310 substrates
301 first coating
302 second coating
303 first metal materials
304 second metal materials
305 pairs of layers
Detailed description of the invention
It is described more fully with example embodiment referring now to accompanying drawing.But, example embodiment can be with multiple shape
Formula is implemented, and is not understood as limited to embodiment set forth herein；On the contrary, it is provided that these embodiments make the present invention incite somebody to action
Fully and completely, and by the design of example embodiment those skilled in the art is conveyed to all sidedly.The most identical is attached
Figure labelling represents same or similar structure, thus will omit their detailed description.
Figure 1A illustrates the layout of organic light-emitting display device according to embodiments of the present invention.With reference to Figure 1A, organic light emission
Display device includes: the multiple insulated from each other and gate line 110 that arranges in one direction, multiple insulated from each other and along and gate line
The data wire 120 that 110 directions intersected are arranged, and the power line 130 intersected with gate line 110, power line 130 and data wire
120 be arranged in parallel and insulated from each other.Organic light-emitting display device also includes: by gate line 110, data wire 120 and power line 130
The multiple pixel cells 140 formed, and there are the multiple pixel electrodes in the opening 155 being arranged on each pixel cell 140
150。
Wherein, gate line 110, data wire 120 and power line 130 can be by having the first coating and the metal of the second coating
Coating is formed.Second coating is in the side away from described substrate of the first coating.First coating is by having along thickness direction concentration
First metal material of graded and the gradient layer of the second metal material are formed.Second coating has at least two to layer.Often
Individual layer is alternately stacked by one layer of first metal material and one layer of second metal material.Each the first metal material layer to layer
Thickness is identical.Each thickness to the second metal material layer of layer is the most identical.
Specifically, R, G and B unit picture element is arranged in each pixel cell 140, and each pixel cell includes thin film
Transistor, capacitor and be connected pixel electrode 150 and above-mentioned thin with light emitting diode, the through hole 157 of pixel electrode 150 coupling
In the source electrode of film transistor and drain electrode one.
In unit picture element, the connected mode between each element sees Figure 1B.Figure 1B illustrates according to embodiments of the present invention
Organic light-emitting display device in the layout of unit picture element.Specifically, unit picture element 140 is by gate line 110, data wire 120
Formed with power line 130.Unit picture element 140 also includes the pixel electrode 150 with opening 155.
Each pixel electrode 150 arranges R, G and B unit picture element.Each pixel include two thin film transistor (TFT)s 160 and 180,
Capacitor 170 and the Organic Light Emitting Diode with pixel electrode 150.
The thin film transistor (TFT) 160 that can be used as switch may include that the semiconductor layer 161 with source electrode and drain region, with
The gate electrode 163 that gate line 110 is connected.Gate electrode 163 can be by having the first coating and the coat of metal of the second coating
Formed.Thin film transistor (TFT) 160 can farther include source electrode 165 and drain electrode 167, and by contact hole 164 and 166 points
It is not connected with source electrode and the drain region of semiconductor layer 161, and by having the coat of metal shape of the first coating and the second coating
Become.Wherein, the first coating is by the first metal material having along the change of thickness direction Concentraton gradient and the ladder of the second metal material
Degree layer is formed.Second coating has at least two to layer.Each to layer by one layer of first metal material and one layer of second metal material
Material is alternately stacked.Each thickness to the first metal material layer of layer is identical.The thickness of each the second metal material layer to layer
The most identical.
The thin film transistor (TFT) 180 that can be used as driving may include that semiconductor layer 181 and the grid with source electrode and drain region
Pole electrode 183.Gate electrode 183 can be formed by the coat of metal with the first coating and the second coating.Thin film transistor (TFT) 180
Can farther include source electrode 185 and drain electrode 187, and by contact hole 184 and 186 respectively with semiconductor layer 181
Source electrode is connected with drain region, and is formed by the coat of metal with the first coating and the second coating.Thin film transistor (TFT) 180
Source electrode 185 is connected with power line 130.Wherein, the first coating is by the first gold medal having along the change of thickness direction Concentraton gradient
The gradient layer belonging to material and the second metal material is formed.Second coating has at least two to layer.Each to layer by one layer first
Metal material and one layer of second metal material are alternately stacked.Each thickness to the first metal material layer of layer is identical.Each right
The thickness of the second metal material layer of layer is the most identical.
Capacitor 170 can include bottom electrode 171, and it is by the drain electrode 167 of contact hole 168 with switching transistor 160
It is connected and is connected with the gate electrode 183 of thin film transistor (TFT) 180.The bottom electrode 171 of capacitor 170 can be by having the first coating
And second coating the coat of metal formed.Capacitor 170 may further include the upper electrode 173 being connected with power line 130,
And formed by the coat of metal with the first coating and the second coating.Wherein, the first coating is by having along thickness direction concentration
First metal material of graded and the gradient layer of the second metal material are formed.Second coating has at least two to layer.Often
Individual layer is alternately stacked by one layer of first metal material and one layer of second metal material.Each the first metal material layer to layer
Thickness is identical.Each thickness to the second metal material layer of layer is the most identical.
Pixel electrode 150 is connected with the drain electrode 187 of thin film transistor (TFT) 180 by through hole 157.
The present invention have the illustrative examples of above-mentioned structure organic light-emitting display device can by have the first coating and
The coat of metal of the second coating reduces conductor resistance, and solves pressure drop and the capacitance time delay issue caused due to resistance.With
In the first metal material forming the coat of metal, it is preferable that select the resistivity copper less than 2.2 μ Ω cm.And be used for forming metal
Second metal material of coating, then select in can be used for molybdenum, titanium, aluminum, nickel or the tin indium oxide stopping steam etc.
One or more.
Wherein, in this gradient layer, the concentration of the first metal material and the second metal material can linearly change or non-
Linear change.Further, the content of the second metal material is gradually increased towards substrate, and the content of the first metal material is away from substrate
It is gradually increased.
Furthermore, it is contemplated that etch rate, the thickness of the first coating account for the thickness of the coat of metal 1 to two/3rd/
One.The thickness of the second coating and the thickness of the first coating are corresponding, if the thickness of the first coating accounts for three points of metal layer thickness
One of, then the thickness of the second coating accounts for 2/3rds of metal layer thickness；If the thickness of the first coating accounts for metal layer thickness
1/2nd, then the thickness of the second coating accounts for the residue 1/2nd of metal layer thickness.For the second coating, each to layer
Thickness beExtremely
Fig. 2 illustrates the cross-sectional configuration of organic light-emitting display device according to embodiments of the present invention.It includes organic light emission two
Pole pipe, capacitor, gate line, data wire and the thin film transistor (TFT) being connected with Organic Light Emitting Diode.
With reference to Fig. 2, thin film transistor (TFT) 201 includes: have source area 221 He on the cushion 210 of dielectric substrate 200
The semiconductor layer of drain region 223, and the gate electrode 241 being formed on gate insulator 230.Source electrode 261 and drain electrode
Electrode 263 is formed on interlayer insulating film 250, and by respective contact hole 251 and 253 and source area 221 and drain region
223 are connected.
Capacitor 203 includes: the bottom electrode 245 being concurrently formed on gate insulator 230 with gate electrode 241, and
The upper electrode 265 being concurrently formed on interlayer insulating film 250 with source electrode and drain electrode 261 and 263.Gate line 247 can be with
Gate electrode 241 is concurrently formed on gate insulator 230, and data wire 267 can be in source electrode and drain electrode 261 and 263
It is concurrently formed on interlayer insulating film 250.
Organic Light Emitting Diode 205 includes: bottom electrode 281, and it can be formed in the transmission electrode on passivation layer 270 also
Couple mutually, such as, by through hole 275 and drain electrode with one of the source electrode of thin film transistor (TFT) 201 and drain electrode 261 and 263
263 engage.Organic Light Emitting Diode 205 can also include: the organic thin film layer 283 being formed on opening 295, under opening has
Pixel confining layers 290 on electrode 281 is determined.And it is formed at the upper electrode 285 on the whole surface of substrate.
According to an illustrative examples, grid wiring includes gate electrode 241, the bottom electrode 245 of capacitor and grid
Line 247, and data wiring include source electrode and drain electrode 261 and 263, the upper electrode 265 of capacitor, data wire 267 and electricity
Source line.Grid wiring and data wiring can have the coat of metal of the first coating 202 and the second coating 204 and be formed.Wherein,
One coating 202 is by the first metal material having along the change of thickness direction Concentraton gradient and the gradient layer shape of the second metal material
Become.Second coating 204 has at least two to layer.Each layer is handed over by one layer of first metal material and one layer of second metal material
For stacking.Each thickness to the first metal material layer of layer is identical.The thickness also phase of each the second metal material layer to layer
With.Further, in this gradient layer, the content of the second metal material is gradually increased towards substrate 200, and the containing of the first metal material
Amount is gradually increased away from substrate 200.
Fig. 3 illustrates the cross-sectional configuration of the coat of metal of organic light-emitting display device according to embodiments of the present invention.Specifically,
The coat of metal includes the first coating 301 and the second coating 302.First coating 301 is formed on substrate 310, the second coating 302 shape
Become in the first coating 301 side different with substrate 310.
First coating 301 is by the first metal material 303 and the second metal material having along the change of thickness direction Concentraton gradient
The gradient layer of material 304 is formed.Wherein, the content of the second metal material 304 is gradually increased towards substrate 310, and the first metal material
The content of material 303 is gradually increased away from substrate 310.Concentration between first metal material 303 and the second metal material 304 is permissible
Linearly change or nonlinear change.
Second coating 302 has at least two to layer 305.Each to layer 305 by one layer of first metal material 303 and one layer
Second metal material 304 is alternately stacked.Each thickness to the first metal material layer of layer 305 is identical.Each to layer 305
The thickness of two metal material layers is the most identical.
For forming the first metal material of the coat of metal, preferably as plain conductor, select resistivity less than 2.2 μ
The copper of Ω cm.And for forming the second metal material of the coat of metal, then the molybdenum that can be used for steam etc. is stopped, titanium,
Aluminum, nickel or tin indium oxide select one or more.
Furthermore, it is contemplated that etch rate, the thickness of the first coating 301 accounts for two/3rd point of the thickness of the coat of metal
One of.The thickness of the second coating 302 and the thickness of the first coating 301 are corresponding, if the thickness of the first coating 301 accounts for the coat of metal
/ 3rd of thickness, then the thickness of the second coating 302 accounts for 2/3rds of metal layer thickness；If the thickness of the first coating 301
Degree accounts for 1/2nd of metal layer thickness, then the thickness of the second coating 302 accounts for the residue 1/2nd of metal layer thickness.Right
In the second coating, each thickness to layer isExtremely
The second metal material wherein, in a preference of the present embodiment, in the first coating 301 and the second coating 302
Expect that 304 is identical.Second metal material 304 of the such as first coating 301 and the second coating 302 is all titanium.In a change case,
The second metal material 304 in first coating 301 and the second coating 302 differs.Such as, the second metal of the first coating 301
Material 304 is titanium, and the second metal material 304 of the second coating 302 is molybdenum；The most such as, the second metal material of the first coating 301
304 is aluminum, and the second metal material 304 of the second coating 302 is nickel.Those skilled in the art can realize more change case,
Do not repeat them here.
First embodiment:
In the present embodiment, select copper (Cu) as the first metal material, select titanium (Ti) as the second metal material.And
It is etched according to parameters such as following etch-rate ratio and etching selectivities.
Wherein, the etch-rate ratio of Cu/Ti: during 500nm, Cu is 14.9-17.2nm/s, and Ti is 0.67nm/s.Cu/Ti loses
Carve and select ratio for 18:1.
Second embodiment:
In the present embodiment, select copper (Cu) as the first metal material, select molybdenum (Mo) as the second metal material.And
It is etched according to parameters such as following etch-rate ratio and etching selectivities.
Wherein, the etch-rate ratio of Cu/Ti: during 500nm, Cu is～7.65nm/s, Ti～1.43nm/s.Cu/Ti etches
Selecting ratio is 5.35.
In both examples above, the etch effect of the second embodiment is preferable.
More than it is particularly shown and described the illustrative embodiments of the present invention.It should be understood that the invention is not restricted to institute
Disclosed embodiment, on the contrary, it is intended to contain the various amendments comprised in the spirit and scope of the appended claims
And equivalent arrangements.
Claims (22)
1. a thin film transistor (TFT), including:
Form the semiconductor layer on substrate；
Gate electrode；And
The source electrode being connected with described semiconductor layer and drain electrode,
Wherein, at least one electrode in described gate electrode, described source electrode and described drain electrode is by having first
The coat of metal of coating and the second coating is formed, described second coating at described first coating away from the one of described substrate
Side,
It is characterized in that,
Described first coating is by the first metal material having along the change of thickness direction Concentraton gradient and the ladder of the second metal material
Degree layer is formed,
Described second coating has at least two to layer, described to layer by one layer of described first metal material and one layer described second
Metal material is alternately stacked, and each described thickness to described first metal material layer of layer is identical, each described institute to layer
The thickness stating the second metal material layer is the most identical.
Thin film transistor (TFT) the most according to claim 1, it is characterised in that the content of described first metal material is away from described
Substrate is gradually increased, and the content of described second metal material is gradually increased towards described substrate.
Thin film transistor (TFT) the most according to claim 1, it is characterised in that described Concentraton gradient linearly changes.
Thin film transistor (TFT) the most according to claim 1, it is characterised in that described Concentraton gradient is nonlinear change.
Thin film transistor (TFT) the most according to claim 1, it is characterised in that described first metal material is as at least one electricity
The conductor material of pole.
Thin film transistor (TFT) the most according to claim 5, it is characterised in that described first metal material is copper.
Thin film transistor (TFT) the most according to claim 1, it is characterised in that described second metal material is as adhering to described lining
The material on the barrier layer at the end.
Thin film transistor (TFT) the most according to claim 7, it is characterised in that described second metal material is in following material
One or more:
Molybdenum；
Titanium；
Aluminum；
Nickel；Or
Tin indium oxide.
Thin film transistor (TFT) the most according to claim 1, it is characterised in that the thickness of described first coating accounts for described metal-plated
/ to two/3rd of the thickness of layer.
Thin film transistor (TFT) the most according to claim 1, it is characterised in that each described thickness to layer isExtremely
11. thin film transistor (TFT)s according to claim 1, it is characterised in that described substrate is glass substrate.
12. 1 kinds of organic light-emitting display devices, including:
The grid wiring being formed on substrate connects up with data；
Connect up, with described data, the pixel portion formed by described grid wiring；And
It is arranged on the pixel in described pixel portion,
Wherein, during described grid wiring and described data connect up, at least one wiring is by having the first coating and the second coating
The coat of metal formed, described second coating in the side away from described substrate of described first coating,
Wherein, described pixel includes that transistor, capacitor and organic illuminating element, the wiring of described data include described transistor
At least one in the drain electrode of source electrode and described transistor, described grid wiring includes the grid electricity of described transistor
Pole,
It is characterized in that,
Described first coating is by the first metal material having along the change of thickness direction Concentraton gradient and the ladder of the second metal material
Degree layer is formed,
Described second coating has at least two to layer, described to layer by one layer of described first metal material and one layer described second
Metal material is alternately stacked, and each described thickness to described first metal material layer of layer is identical, each described institute to layer
The thickness stating the second metal material layer is the most identical.
13. organic light-emitting display devices according to claim 12, it is characterised in that the content of described first metal material
Being gradually increased away from described substrate, the content of described second metal material is gradually increased towards described substrate.
14. organic light-emitting display devices according to claim 12, it is characterised in that described Concentraton gradient linearly becomes
Change.
15. organic light-emitting display devices according to claim 12, it is characterised in that described Concentraton gradient is non-linear change
Change.
16. organic light-emitting display devices according to claim 12, it is characterised in that described first metal material is as extremely
The conductor material of a few electrode.
17. organic light-emitting display devices according to claim 16, it is characterised in that described first metal material is copper.
18. organic light-emitting display devices according to claim 12, it is characterised in that described second metal material is as viscous
The material on the barrier layer of attached described substrate.
19. organic light-emitting display devices according to claim 12, it is characterised in that described second metal material is following
One or more in material:
Molybdenum；
Titanium；
Aluminum；
Nickel；Or
Tin indium oxide.
20. organic light-emitting display devices according to claim 12, it is characterised in that the thickness of described first coating accounts for institute
State the coat of metal thickness 1/1st to two/3rd.
21. organic light-emitting display devices according to claim 12, it is characterised in that each described thickness to layer isExtremely
22. organic light-emitting display devices according to claim 12, it is characterised in that described substrate is glass substrate.
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| CN201410284140.6A CN104051542B (en) | 2014-06-23 | 2014-06-23 | Organic light-emitting display device and thin film transistor (TFT) thereof |
| TW103126339A TWI562339B (en) | 2014-06-23 | 2014-08-01 | Organic light-emitting display device and thin-film transistor thereof |
| KR1020140191712A KR101602793B1 (en) | 2014-06-23 | 2014-12-29 | One kine of low resistance metal wire technology for amoled device |
| JP2015098904A JP6505499B2 (en) | 2014-06-23 | 2015-05-14 | Organic light emitting display device and thin film transistor thereof |
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| CN201410284140.6A CN104051542B (en) | 2014-06-23 | 2014-06-23 | Organic light-emitting display device and thin film transistor (TFT) thereof |
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| JP2020120080A (en) * | 2019-01-28 | 2020-08-06 | 株式会社村田製作所 | Semiconductor element |
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| TW201601294A (en) | 2016-01-01 |
| KR101602793B1 (en) | 2016-03-11 |
| KR20150146370A (en) | 2015-12-31 |
| JP2016009186A (en) | 2016-01-18 |
| JP6505499B2 (en) | 2019-04-24 |
| CN104051542A (en) | 2014-09-17 |
| TWI562339B (en) | 2016-12-11 |
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Address after: 201506, No. nine, No. 1568, Jinshan Industrial Zone, Shanghai, Jinshan District Patentee after: Shanghai Hehui optoelectronic Co., Ltd Address before: 201500, building two, building 100, 1, Jinshan Industrial Road, 208, Shanghai, Jinshan District Patentee before: EverDisplay Optronics (Shanghai) Ltd. |