CN104051542A - Organic light-emitting display device and thin film transistor thereof - Google Patents
Organic light-emitting display device and thin film transistor thereof Download PDFInfo
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- CN104051542A CN104051542A CN201410284140.6A CN201410284140A CN104051542A CN 104051542 A CN104051542 A CN 104051542A CN 201410284140 A CN201410284140 A CN 201410284140A CN 104051542 A CN104051542 A CN 104051542A
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- 239000010409 thin film Substances 0.000 title claims abstract description 40
- 239000007769 metal material Substances 0.000 claims abstract description 119
- 238000000576 coating method Methods 0.000 claims abstract description 106
- 239000011248 coating agent Substances 0.000 claims abstract description 105
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 229910052751 metal Inorganic materials 0.000 claims abstract description 40
- 239000002184 metal Substances 0.000 claims abstract description 40
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 239000010949 copper Substances 0.000 claims description 26
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 17
- 229910052802 copper Inorganic materials 0.000 claims description 17
- 239000010936 titanium Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- 239000003990 capacitor Substances 0.000 claims description 12
- 229910052719 titanium Inorganic materials 0.000 claims description 11
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- 229910052750 molybdenum Inorganic materials 0.000 claims description 9
- 239000011733 molybdenum Substances 0.000 claims description 9
- 239000004411 aluminium Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 96
- 238000005530 etching Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 5
- 239000012212 insulator Substances 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229920001621 AMOLED Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
- H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/84—Parallel electrical configurations of multiple OLEDs
Abstract
The invention provides an organic light-emitting display device and a thin film transistor of the organic light-emitting display device. The organic light-emitting display device and the thin film transistor of the organic light-emitting display device are characterized in that the thin film transistor comprises a semiconductor layer formed on a substrate, a gate electrode, a source electrode and a drain electrode, wherein the source electrode and the drain electrode are connected with the semiconductor layer, and at least one of the gate electrode, the source electrode and the drain electrode is formed by a metal coating provided with a first coating and a second coating. The second coating is located on one side, away from the substrate, of the first coating, the first coating is formed by a gradient layer of a first metal material of which the concentration gradient changes in the layer thickness direction and a gradient layer of a second metal material of which the concentration gradient changes in the layer thickness direction, the second gradient layer is provided with at least two opposite layers, the opposite layers are formed by alternately stacking one layer of the first metal material and one layer of the second metal material, the thicknesses of the first metal material layers of the opposite layers are equal, and the thicknesses of the second metal materials of the opposite layers are equal as well.
Description
Technical field
The present invention relates to display, relate in particular to organic light-emitting display device and thin-film transistor thereof.
Background technology
At present, substrate or base material can be in order to manufacture various electronic products, and for example glass substrate transparent substrates can be in order to manufacture display floater.Taking large-sized organic light emitting display (Organic LE Display, OLED), panel is as example, and it can cut into multiple organic luminescence display units.Organic luminescence display unit at least comprises an anode electrode plate, a luminescent layer and a cathode electrode plate; Wherein, luminescent layer is sandwiched in and between anode electrode plate and cathode electrode plate, forms one " sandwich " (sandwich) structure.Under forward voltage drives, anode electrode plate is to luminescent layer injected hole, and cathode electrode plate injects electronics to luminescent layer.The combination of meeting in luminescent layer of injected holes and electronics, makes electronics fall back ground state by excitation state, and excess energy is disengaged with the form radiation of light wave.
Particularly, in active matrix organic light emitting diode display, thin-film transistor is typically used as the switching device at each pixel place.
Recently there is the trend of the size that increases organic light emitting diode display.Therefore, more need higher resolution.There is the RC that the larger organic light emitting diode display of higher resolution must reduce and postpone, can postpone by the resistance of wiring being minimized to realize the RC reducing.
Conventionally, resistivity is less than to the molybdenum (Mo) of 12 μ Ω cm and resistivity and is less than the aluminium (Al) of 5.5 μ Ω cm as the wiring of electrode or thin-film transistor.Because the resistivity of these metals is high, so these metals are easy to make to be difficult to manufacture the larger organic light emitting diode display with higher resolution.Therefore, because the resistivity of copper (Cu) is less than 2.2 μ Ω cm, so for copper is studied as selectable wiring and electrode.
But, although can be by all electrodes in gate electrode, source electrode and the drain electrode of copper application and thin-film transistor, in the time that copper is applied to gate electrode, copper and be formed with the poor adhesive force of the substrate of glass of thin-film transistor.In addition,, when by copper application and source electrode and drain electrode, copper can be in silicon (Si) film reaction as buffer.Therefore,, in the time that copper is applied to gate electrode, source electrode and/or drain electrode, can not use copper with individual layer.
Summary of the invention
The invention provides a kind of thin-film transistor, it is characterized in that, comprising: form the semiconductor layer on substrate, gate electrode, and the source electrode and the drain electrode that are connected with described semiconductor layer, wherein, described gate electrode, at least one electrode in described source electrode and described drain electrode is formed by the coat of metal with the first coating and the second coating, described the second coating is in the side away from described substrate of described the first coating, described the first coating forms by having along the first metal material of bed thickness direction concentration gradient variation and the gradient layer of the second metal material, described the second coating has at least two to layer, described alternately stacking by the second metal material described in the first metal material and one deck described in one deck to layer, the thickness of each described described the first metal material layer to layer is identical, the thickness of each described described the second metal material layer to layer is also identical.
Preferably, the content of described the first metal material increases gradually away from described substrate, and the content of described the second metal material increases gradually towards described substrate.
Preferably, described concentration gradient is linear change.
Preferably, described concentration gradient is nonlinear change.
Preferably, described the first metal material is as the conductor material of at least one electrode.
Preferably, described the first metal material is copper.
Preferably, described the second metal material is as the material on the barrier layer of the described substrate of adhesion.
Preferably, described the second metal material is one or more in following material: molybdenum; Titanium; Aluminium; Nickel; Or tin indium oxide.
Preferably, the thickness of described the first coating account for the described coat of metal thickness 1/3rd to 1/2nd.
Preferably, eachly describedly to the thickness of layer be
extremely
Preferably, described substrate is glass substrate.
According to another aspect of the invention, also provide a kind of organic light-emitting display device, it is characterized in that, comprising: be formed on grid wiring and data arrange on substrate, the pixel portion being formed by described grid wiring and described data arrange, and be arranged on the pixel in described pixel portion, wherein, in described grid wiring and described data arrange, at least one wiring is formed by the coat of metal with the first coating and the second coating, described the second coating is in the side away from described substrate of described the first coating, described the first coating forms by having along the first metal material of bed thickness direction concentration gradient variation and the gradient layer of the second metal material, described the second coating has at least two to layer, described alternately stacking by the second metal material described in the first metal material and one deck described in one deck to layer, the thickness of each described described the first metal material layer to layer is identical, the thickness of each described described the second metal material layer to layer is also identical, wherein, described pixel comprises transistor, capacitor and organic illuminating element, described data arrange comprises at least one in described transistorized source electrode and described transistorized drain electrode, described grid wiring comprises described transistorized gate electrode.
Preferably, the content of described the first metal material increases gradually away from described substrate, and the content of described the second metal material increases gradually towards described substrate.
Preferably, described concentration gradient is linear change.
Preferably, described concentration gradient is nonlinear change.
Preferably, described the first metal material is as the conductor material of at least one electrode.
Preferably, described the first metal material is copper.
Preferably, described the second metal material is as the material on the barrier layer of the described substrate of adhesion.
Preferably, described the second metal material is one or more in following material: molybdenum; Titanium; Aluminium; Nickel; Or tin indium oxide.
Preferably, the thickness of described the first coating account for the described coat of metal thickness 1/3rd to 1/2nd.
Preferably, eachly describedly to the thickness of layer be
extremely
Preferably, described substrate is glass substrate.
The present invention utilizes two kinds of metal materials and changes coated metal electrode mode and reduces conductor resistance.The present invention adopts graded metal coating to form the first coating in the part near substrate, and on graded metal coating, adopts multilayer alternating growth to form the second gradient layer.Wherein, two kinds of metal materials are respectively as conductor material and barrier material, and the present invention is issued to the effect that reduces resistance and adjust after etching speed in the prerequisite that ensures barrier layer function.
Brief description of the drawings
By describe its example embodiment in detail with reference to accompanying drawing, above-mentioned and further feature of the present invention and advantage will become more obvious.
Figure 1A illustrates according to the layout of the organic light-emitting display device of the embodiment of the present invention;
Figure 1B illustrates according to the layout of unit picture element in the organic light-emitting display device of the embodiment of the present invention;
Fig. 2 illustrates according to the cross-sectional configuration of the organic light-emitting display device of the embodiment of the present invention; And
Fig. 3 illustrates according to the cross-sectional configuration of the coat of metal of the organic light-emitting display device of the embodiment of the present invention.
Reference numeral
110 gate lines
120 data wires
130 power lines
140 unit picture elements
155 openings
150 pixel electrodes
157 through holes
160 thin-film transistors
161 semiconductor layers
163 gate electrodes
165 source electrodes
167 drain electrodes
164,166,168 contact holes
180 thin-film transistors
181 semiconductor layers
183 gate electrodes
185 source electrodes
187 drain electrodes
184,186 contact holes
170 electric capacity
171 bottom electrodes
173 top electrodes
200 substrates
210 resilient coatings
230 gate insulators
250 interlayer insulating films
270 passivation layers
247 gate lines
267 data wires
283 organic thin film layers
290 pixels limit layer
201 thin-film transistors
221 source areas
223 drain regions
241 gate electrodes
261 source electrodes
263 drain electrodes
251,253 contact holes
203 capacitors
245 bottom electrodes
265 top electrodes
205 Organic Light Emitting Diodes
281 bottom electrodes
285 top electrodes
275 through holes
295 openings
202 first coating
204 second coating
310 substrates
301 first coating
302 second coating
303 first metal materials
304 second metal materials
305 pairs of layers
Embodiment
Referring now to accompanying drawing, example embodiment is more fully described.But example embodiment can be implemented in a variety of forms, and should not be understood to be limited to execution mode set forth herein; On the contrary, provide these execution modes to make the present invention by comprehensive and complete, and the design of example embodiment is conveyed to those skilled in the art all sidedly.Identical in the drawings Reference numeral represents same or similar structure, thereby will omit their detailed description.
Figure 1A illustrates according to the layout of the organic light-emitting display device of the embodiment of the present invention.With reference to Figure 1A, organic light-emitting display device comprises: multiple gate lines 110 insulated from each other and that arrange along a direction, multiple data wires 120 insulated from each other and that arrange along the direction of intersecting with gate line 110, and the power line 130 intersecting with gate line 110, power line 130 be arranged in parallel with data wire 120 and is insulated from each other.Organic light-emitting display device also comprises: the multiple pixel cells 140 that formed by gate line 110, data wire 120 and power line 130, and there are the multiple pixel electrodes 150 in the opening 155 that is arranged on each pixel cell 140.
Wherein, gate line 110, data wire 120 and power line 130 can be formed by the coat of metal with the first coating and the second coating.The second coating is in the side away from described substrate of the first coating.The first coating forms by having along the first metal material of bed thickness direction concentration gradient variation and the gradient layer of the second metal material.The second coating has at least two to layer.Each alternately stacking by one deck the first metal material and one deck the second metal material to layer.The thickness of each the first metal material layer to layer is identical.The thickness of each the second metal material layer to layer is also identical.
Particularly, R, G and B unit picture element are arranged in each pixel cell 140, and each pixel cell comprises that thin-film transistor, capacitor and the light-emitting diode being coupled with pixel electrode 150, through hole 157 are connected in the source electrode of pixel electrode 150 and above-mentioned thin-film transistor and drain electrode.
In unit picture element, the connected mode between each element is referring to Figure 1B.Figure 1B illustrates according to the layout of unit picture element in the organic light-emitting display device of the embodiment of the present invention.Particularly, unit picture element 140 is formed by gate line 110, data wire 120 and power line 130.Unit picture element 140 also comprises the pixel electrode 150 with opening 155.
R, G and B unit picture element are set in each pixel electrode 150.Each pixel comprises two thin-film transistors 160 and 180, capacitor 170 and has the Organic Light Emitting Diode of pixel electrode 150.
The thin-film transistor 160 that can be used as switch can comprise: have the semiconductor layer 161 of source electrode and drain region, the gate electrode 163 being connected with gate line 110.Gate electrode 163 can be formed by the coat of metal with the first coating and the second coating.Thin-film transistor 160 can further comprise source electrode 165 and drain electrode 167, and is connected with drain region with the source electrode of semiconductor layer 161 respectively with 166 by contact hole 164, and is formed by the coat of metal with the first coating and the second coating.Wherein, the first coating forms by having along the first metal material of bed thickness direction concentration gradient variation and the gradient layer of the second metal material.The second coating has at least two to layer.Each alternately stacking by one deck the first metal material and one deck the second metal material to layer.The thickness of each the first metal material layer to layer is identical.The thickness of each the second metal material layer to layer is also identical.
The thin-film transistor 180 that can be used as driving can comprise: semiconductor layer 181 and the gate electrode 183 with source electrode and drain region.Gate electrode 183 can be formed by the coat of metal with the first coating and the second coating.Thin-film transistor 180 can further comprise source electrode 185 and drain electrode 187, and is connected with drain region with the source electrode of semiconductor layer 181 respectively with 186 by contact hole 184, and is formed by the coat of metal with the first coating and the second coating.The source electrode 185 of thin-film transistor 180 is connected with power line 130.Wherein, the first coating forms by having along the first metal material of bed thickness direction concentration gradient variation and the gradient layer of the second metal material.The second coating has at least two to layer.Each alternately stacking by one deck the first metal material and one deck the second metal material to layer.The thickness of each the first metal material layer to layer is identical.The thickness of each the second metal material layer to layer is also identical.
Capacitor 170 can comprise bottom electrode 171, and it is connected with the drain electrode 167 of switching transistor 160 and is connected with the gate electrode 183 of thin-film transistor 180 by contact hole 168.The bottom electrode 171 of capacitor 170 can be formed by the coat of metal with the first coating and the second coating.Capacitor 170 may further include the top electrode 173 being connected with power line 130, and is formed by the coat of metal with the first coating and the second coating.Wherein, the first coating forms by having along the first metal material of bed thickness direction concentration gradient variation and the gradient layer of the second metal material.The second coating has at least two to layer.Each alternately stacking by one deck the first metal material and one deck the second metal material to layer.The thickness of each the first metal material layer to layer is identical.The thickness of each the second metal material layer to layer is also identical.
Pixel electrode 150 is connected with the drain electrode 187 of thin-film transistor 180 by through hole 157.
The organic light-emitting display device that the present invention has the illustrative examples of above-mentioned structure can reduce conductor resistance by the coat of metal with the first coating and the second coating, and solves the pressure drop and the electric capacity time delay problem that cause due to resistance.Be used to form the first metal material of the coat of metal, preferably, select resistivity to be less than the copper of 2.2 μ Ω cm.And be used to form the second metal material of the coat of metal, in the molybdenum, titanium, aluminium, nickel or the tin indium oxide that can be used for steam etc. to stop, select one or more.
Wherein, in this gradient layer, the concentration of the first metal material and the second metal material can be linear change or nonlinear change.And the content of the second metal material increases gradually towards substrate, and the content of the first metal material increases gradually away from substrate.
In addition, consider etch rate, the thickness of the first coating account for the coat of metal thickness 1/3rd to 1/2nd.The thickness of the second coating is corresponding with the thickness of the first coating, if the thickness of the first coating accounts for 1/3rd of metal layer thickness, the thickness of the second coating accounts for 2/3rds of metal layer thickness; If the thickness of the first coating accounts for 1/2nd of metal layer thickness, the thickness of the second coating accounts for the residue 1/2nd of metal layer thickness.For the second coating, eachly to the thickness of layer be
extremely
Fig. 2 illustrates according to the cross-sectional configuration of the organic light-emitting display device of the embodiment of the present invention.It includes OLED, capacitor, gate line, data wire and the thin-film transistor being connected with Organic Light Emitting Diode.
With reference to Fig. 2, thin-film transistor 201 comprises: have source area 221 on the resilient coating 210 of dielectric substrate 200 and the semiconductor layer of drain region 223, and be formed on the gate electrode 241 on gate insulator 230.Source electrode 261 and drain electrode 263 are formed on interlayer insulating film 250, and are connected with drain region 223 with source area 221 with 253 by contact hole 251 separately.
Capacitor 203 comprises: be formed on the bottom electrode 245 on gate insulator 230 with gate electrode 241 simultaneously, and be formed on the top electrode 265 on interlayer insulating film 250 with source electrode and drain electrode 261 and 263 simultaneously.Gate line 247 can be formed on gate insulator 230 with gate electrode 241 simultaneously, and data wire 267 can be formed on interlayer insulating film 250 in source electrode and drain electrode 261 and 263 simultaneously.
Organic Light Emitting Diode 205 comprises: bottom electrode 281, it can be formed in transmission electrode on passivation layer 270 and couple mutually with one of the source electrode of thin-film transistor 201 and drain electrode 261 and 263, for example, engages with drain electrode 263 by through hole 275.Organic Light Emitting Diode 205 also can comprise: be formed on the organic thin film layer 283 on opening 295, opening has the pixel restriction layer 290 on bottom electrode 281 to determine.And be formed on the whole lip-deep top electrode 285 of substrate.
According to an illustrative examples, grid wiring comprises bottom electrode 245 and the gate line 247 of gate electrode 241, capacitor, and data arrange comprises top electrode 265, data wire 267 and the power line of source electrode and drain electrode 261 and 263, capacitor.The coat of metal that grid wiring and data arrange can have the first coating 202 and the second coating 204 forms.Wherein, the first coating 202 forms by having along the first metal material of bed thickness direction concentration gradient variation and the gradient layer of the second metal material.The second coating 204 has at least two to layer.Each alternately stacking by one deck the first metal material and one deck the second metal material to layer.The thickness of each the first metal material layer to layer is identical.The thickness of each the second metal material layer to layer is also identical.And in this gradient layer, the content of the second metal material increases gradually towards substrate 200, and the content of the first metal material increases gradually away from substrate 200.
Fig. 3 illustrates according to the cross-sectional configuration of the coat of metal of the organic light-emitting display device of the embodiment of the present invention.Particularly, the coat of metal comprises the first coating 301 and the second coating 302.The first coating 301 is formed on substrate 310, and the second coating 302 is formed on the first coating 301 side different with substrate 310.
The first coating 301 forms by having along the first metal material 303 of bed thickness direction concentration gradient variation and the gradient layer of the second metal material 304.Wherein, the content of the second metal material 304 increases gradually towards substrate 310, and the content of the first metal material 303 increases gradually away from substrate 310.Concentration between the first metal material 303 and the second metal material 304 can be linear change or nonlinear change.
The second coating 302 has at least two to layer 305.Each alternately stacking by one deck the first metal material 303 and one deck the second metal material 304 to layer 305.The thickness of each the first metal material layer to layer 305 is identical.The thickness of each the second metal material layer to layer 305 is also identical.
Be used to form the first metal material of the coat of metal, preferably as plain conductor, select resistivity to be less than the copper of 2.2 μ Ω cm.And be used to form the second metal material of the coat of metal, in the molybdenum, titanium, aluminium, nickel or the tin indium oxide that can be used for steam etc. to stop, select one or more.
In addition, consider etch rate, the thickness of the first coating 301 account for the coat of metal thickness 1/3rd to 1/2nd.The thickness of the second coating 302 is corresponding with the thickness of the first coating 301, if the thickness of the first coating 301 accounts for 1/3rd of metal layer thickness, the thickness of the second coating 302 accounts for 2/3rds of metal layer thickness; If the thickness of the first coating 301 accounts for 1/2nd of metal layer thickness, the thickness of the second coating 302 accounts for the residue 1/2nd of metal layer thickness.For the second coating, eachly to the thickness of layer be
extremely
Wherein, in a preference of the present embodiment, the second metal material 304 in the first coating 301 and the second coating 302 is identical.The second metal material 304 of for example the first coating 301 and the second coating 302 is all titanium.Change in example at one, the second metal material 304 in the first coating 301 and the second coating 302 is not identical.For example, the second metal material 304 of the first coating 301 is titanium, and the second metal material 304 of the second coating 302 is molybdenum; Again for example, the second metal material 304 of the first coating 301 is aluminium, and the second metal material 304 of the second coating 302 is nickel.Those skilled in the art can realize more variation example, do not repeat them here.
The first embodiment:
In the present embodiment, select copper (Cu) as the first metal material, select titanium (Ti) as the second metal material.And carry out etching according to parameters such as following etch-rate ratio and etching selectivities.
Wherein, the etch-rate ratio of Cu/Ti: when 500nm, Cu is 14.9-17.2nm/s, and Ti is 0.67nm/s.Cu/Ti etching selectivity is 18:1.
The second embodiment:
In the present embodiment, select copper (Cu) as the first metal material, select molybdenum (Mo) as the second metal material.And carry out etching according to parameters such as following etch-rate ratio and etching selectivities.
Wherein, the etch-rate ratio of Cu/Ti: when 500nm, Cu is～7.65nm/s, Ti～1.43nm/s.Cu/Ti etching selectivity is 5.35.
In above two embodiment, the etch effect of the second embodiment is better.
Below illustrate particularly and described illustrative embodiments of the present invention.Should be appreciated that, the invention is not restricted to disclosed execution mode, on the contrary, the invention is intended to contain various amendments and equivalent arrangements in the spirit and scope that are included in claims.
Claims (22)
1. a thin-film transistor, is characterized in that, comprising:
Form the semiconductor layer on substrate;
Gate electrode; And
The source electrode and the drain electrode that are connected with described semiconductor layer,
Wherein, at least one electrode in described gate electrode, described source electrode and described drain electrode is formed by the coat of metal with the first coating and the second coating, and described the second coating is in the side away from described substrate of described the first coating,
Described the first coating forms by having along the first metal material of bed thickness direction concentration gradient variation and the gradient layer of the second metal material,
Described the second coating has at least two to layer, described alternately stacking by the second metal material described in the first metal material and one deck described in one deck to layer, the thickness of each described described the first metal material layer to layer is identical, and the thickness of each described described the second metal material layer to layer is also identical.
2. thin-film transistor according to claim 1, is characterized in that, the content of described the first metal material increases gradually away from described substrate, and the content of described the second metal material increases gradually towards described substrate.
3. thin-film transistor according to claim 1, is characterized in that, described concentration gradient is linear change.
4. thin-film transistor according to claim 1, is characterized in that, described concentration gradient is nonlinear change.
5. thin-film transistor according to claim 1, is characterized in that, described the first metal material is as the conductor material of at least one electrode.
6. thin-film transistor according to claim 5, is characterized in that, described the first metal material is copper.
7. thin-film transistor according to claim 1, is characterized in that, described the second metal material is as the material on the barrier layer of the described substrate of adhesion.
8. thin-film transistor according to claim 7, is characterized in that, described the second metal material is one or more in following material:
Molybdenum;
Titanium;
Aluminium;
Nickel; Or
Tin indium oxide.
9. thin-film transistor according to claim 1, is characterized in that, the thickness of described the first coating account for the described coat of metal thickness 1/3rd to 1/2nd.
10. thin-film transistor according to claim 1, is characterized in that, eachly describedly to the thickness of layer is
extremely
11. thin-film transistors according to claim 1, is characterized in that, described substrate is glass substrate.
12. 1 kinds of organic light-emitting display devices, is characterized in that, comprising:
Be formed on grid wiring and data arrange on substrate;
The pixel portion being formed by described grid wiring and described data arrange; And
Be arranged on the pixel in described pixel portion,
Wherein, in described grid wiring and described data arrange, at least one wiring is formed by the coat of metal with the first coating and the second coating, and described the second coating is in the side away from described substrate of described the first coating,
Described the first coating forms by having along the first metal material of bed thickness direction concentration gradient variation and the gradient layer of the second metal material,
Described the second coating has at least two to layer, described alternately stacking by the second metal material described in the first metal material and one deck described in one deck to layer, the thickness of each described described the first metal material layer to layer is identical, and the thickness of each described described the second metal material layer to layer is also identical
Wherein, described pixel comprises transistor, capacitor and organic illuminating element, and described data arrange comprises at least one in described transistorized source electrode and described transistorized drain electrode, and described grid wiring comprises described transistorized gate electrode.
13. organic light-emitting display devices according to claim 12, is characterized in that, the content of described the first metal material increases gradually away from described substrate, and the content of described the second metal material increases gradually towards described substrate.
14. organic light-emitting display devices according to claim 12, is characterized in that, described concentration gradient is linear change.
15. organic light-emitting display devices according to claim 12, is characterized in that, described concentration gradient is nonlinear change.
16. organic light-emitting display devices according to claim 12, is characterized in that, described the first metal material is as the conductor material of at least one electrode.
17. organic light-emitting display devices according to claim 16, is characterized in that, described the first metal material is copper.
18. organic light-emitting display devices according to claim 12, is characterized in that, described the second metal material is as the material on the barrier layer of the described substrate of adhesion.
19. organic light-emitting display devices according to claim 12, is characterized in that, described the second metal material is one or more in following material:
Molybdenum;
Titanium;
Aluminium;
Nickel; Or
Tin indium oxide.
20. organic light-emitting display devices according to claim 12, is characterized in that, the thickness of described the first coating account for the described coat of metal thickness 1/3rd to 1/2nd.
21. organic light-emitting display devices according to claim 12, is characterized in that, eachly describedly to the thickness of layer are
extremely
22. organic light-emitting display devices according to claim 12, is characterized in that, described substrate is glass substrate.
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| CN201410284140.6A CN104051542B (en) | 2014-06-23 | 2014-06-23 | Organic light-emitting display device and thin film transistor (TFT) thereof |
| TW103126339A TWI562339B (en) | 2014-06-23 | 2014-08-01 | Organic light-emitting display device and thin-film transistor thereof |
| KR1020140191712A KR101602793B1 (en) | 2014-06-23 | 2014-12-29 | One kine of low resistance metal wire technology for amoled device |
| JP2015098904A JP6505499B2 (en) | 2014-06-23 | 2015-05-14 | Organic light emitting display device and thin film transistor thereof |
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| CN201410284140.6A CN104051542B (en) | 2014-06-23 | 2014-06-23 | Organic light-emitting display device and thin film transistor (TFT) thereof |
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| TWI562339B (en) | 2016-12-11 |
| KR101602793B1 (en) | 2016-03-11 |
| JP6505499B2 (en) | 2019-04-24 |
| TW201601294A (en) | 2016-01-01 |
| KR20150146370A (en) | 2015-12-31 |
| JP2016009186A (en) | 2016-01-18 |
| CN104051542B (en) | 2016-10-05 |
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Address after: 201506, No. nine, No. 1568, Jinshan Industrial Zone, Shanghai, Jinshan District Patentee after: Shanghai Hehui optoelectronic Co., Ltd Address before: 201500, building two, building 100, 1, Jinshan Industrial Road, 208, Shanghai, Jinshan District Patentee before: EverDisplay Optronics (Shanghai) Ltd. |