CN104051440B - 具有天线的半导体结构 - Google Patents

具有天线的半导体结构 Download PDF

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CN104051440B
CN104051440B CN201410046552.6A CN201410046552A CN104051440B CN 104051440 B CN104051440 B CN 104051440B CN 201410046552 A CN201410046552 A CN 201410046552A CN 104051440 B CN104051440 B CN 104051440B
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antenna
semiconductor structure
substrate
chip
microstrip line
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CN104051440A (zh
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陈纪翰
邱基综
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Advanced Semiconductor Engineering Inc
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    • H—ELECTRICITY
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    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/0087—Apparatus or processes specially adapted for manufacturing antenna arrays
    • H01Q21/0093—Monolithic arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/06—Arrays of individually energised antenna units similarly polarised and spaced apart
    • H01Q21/061—Two dimensional planar arrays
    • H01Q21/065—Patch antenna array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant antennas
    • H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
    • H01Q9/045—Substantially flat resonant element parallel to ground plane, e.g. patch antenna with particular feeding means
    • H01Q9/0457—Substantially flat resonant element parallel to ground plane, e.g. patch antenna with particular feeding means electromagnetically coupled to the feed line
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
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    • H01L2223/66—High-frequency adaptations
    • H01L2223/6661—High-frequency adaptations for passive devices
    • H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
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    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H01L2924/15321—Connection portion the connection portion being formed on the die mounting surface of the substrate being a ball array, e.g. BGA
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    • H01L2924/30—Technical effects
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    • H01L2924/3025—Electromagnetic shielding

Abstract

半导体结构包括基板、电路部、芯片及天线。基板具有相对的第一表面与第二表面。电路部形成于基板的第一表面上且包括波导槽及微带线，微带线与波导槽重迭。芯片设于电路部上。天线形成于基板的第二表面且与波导槽重迭。

Description

具有天线的半导体结构
技术领域
本发明是有关于一种半导体结构，且特别是有关于一种具有天线的半导体结构。
背景技术
无线通信装置例如是手机（cell phone），需要天线已传送及接收信号。传统上，无线通信装置包括天线及通信模块（例如是具有无线射频（Radio frequency,RF）通信能力的一半导体封装件），其各设于一电路板的不同部位。在传统方式中，天线及通信模块是分别制造且于放置在电路板后进行电性连接，因此导致高制造成本且难以完成轻薄短小的设计。
此外，随着感测器、雷达、高数据率连结及聚束功率（focused power），毫米波（millimeter-wave）频率的应用变成更多临界点。短波长工作的优点是取决于尺寸及解析度。亦即，物理上小尺寸天线结构是必须的。
发明内容
根据本发明的一实施例，提出一种半导体结构。半导体结构包括一基板、一电路部、一芯片及一天线。基板具有相对的一第一表面及一第二表面。电路部形成于基板的第一表面上且包括一波导槽及一微带线，微带线与波导槽重迭。芯片设于电路部上。天线形成于基板的第二表面且与波导槽重迭。
根据本发明的另一实施例，提出一种半导体结构。半导体结构包括一基板、一整合被动元件层、一芯片及数个天线。基板具有相对的一第一表面及一第二表面。整合被动元件层形成于基板的第一表面，且包括数个波导槽及数个微带线，微带线重迭于波导槽，其中波导槽及微带线排列成阵列型。芯片设于整合被动元件层上。天线形成于基板的第二表面且与波导槽重迭。
为了对本发明的上述及其他方面有更佳的了解，下文特举较佳实施例，并配合所附附图，作详细说明如下：
附图说明
图1A绘示依照本发明一实施例的半导体结构的剖视图。
图1B，其绘示图1A的俯视图。
图1C绘示图1A的底视图。
图2绘示图1A中天线的X-Z平面的场形图。
图3绘示图1A中天线的反射损失示意图。
图4绘示依照本发明另一实施例的半导体结构的剖视图。
符号说明：
100、200：半导体结构
110：基板
110b：第一表面
110s、130s、131s：外侧面
110u：第二表面
120：芯片
121：焊球
125：底胶
130：电路部
131：接地层
1311：屏蔽部
131a：波导槽
132：第一介电层
133：微带线
134：第二介电层
135：相位位移器
136：图案化导电层
137：馈入电路
138：导通孔
140：天线
145：天线介电层
150、150g：焊球
L1：长度
L2：间距
具体实施方式
请参照图1A，其绘示依照本发明一实施例的半导体结构的剖视图。半导体结构100包括基板110、芯片120、电路部130、数个天线140、天线介电层145及数个焊球150。
基板110具有相对的第一表面110b及第二表面110u。若基板110过厚，则无线信号难以从电路部130辐射至天线140；若基板110过薄，则电磁共振耦合（electromagneticresonance coupling）难以产生。基板110可由玻璃制成，使无线信号可从电路部130通过基板110辐射至天线140。玻璃具有高阻抗（electrical resistance）特性，使由天线140传输的无线信号损失降低，因而提升由天线140传输的无线信号的效率。此外，因为玻璃具有低K值（低介电常数），使天线140的效率更佳提升。在一些例子中，基板110的厚度大约天线140的无线信号波长的一半。例如，当操作频率为60GHz，基板110的厚度大约是300微米。
电路部130形成于基板110的第一表面110b且可以是一多层结构。电路部130包括一接地层131、一第一介电层132、数个微带线（microstrip line）133、一第二介电层134、数个内埋相位位移器135、一图案化导电层136、一馈入电路137及数个导通孔138。
接地层131形成于基板110的第一表面110b且包括一屏蔽部（shielding portion）1311及数个波导槽131a。接地层131中未包含波导槽131a的部分被定义成屏蔽部1311，其中屏蔽部1311与芯片120重迭，如垂直方位所示。如图1A所示，接地层131通过导通孔138及图案化导电层136电性连接于一接地焊球150g，其中接地焊球150g可电性连接于一外部接地，使接地层131接地。因为屏蔽部1311是电性连接于外部接地的部分接地层131，屏蔽部1311因此接地且能提供屏蔽效果。屏蔽部1311的区域大于芯片120的区域，可避免芯片120受到电磁干扰（electromagnetic interference,EMI）。此外，屏蔽部1311可避免电路部130受到从微带线133射向天线140的无线信号的干扰。波导槽131a与微带线133重迭，如产生耦合效应的垂直方位所示。
第一介电层132覆盖接地层131、波导槽131a及屏蔽部1311。一些实施例中，第一介电层132可由例如是封胶（molding compound）、介电材料（如环氧树脂（eposy））或预浸渍压合层（prepreg lamination）制成。
微带线133形成于第一介电层132下方，且通过第一介电层132与波导槽131a分离。当电流传输经微带线133，产生于微带线133与波导槽131a之间的第一耦合共振导致无线信号从波导槽131a的边缘辐射至基板110，然后产生于基板110与天线140之间的第二耦合共振导致无线信号通过天线140辐射至半导体结构100外。由于二耦合共振，故可增加从天线140辐射的无线信号的频宽。
第二介电层134覆盖微带线133且可由相似第一介电层132的材料制成。相位位移器135内埋于第二介电层134且通过导通孔138及图案化导电层136电性连接于微带线133及馈入电路137。相位位移器135例如是二极管，其可调整从天线140发射或被天线140接收的无线信号的相位。另一例中，相位位移器135可以是功率放大器（power amplifier），以调变无线信号的振幅。馈入电路137可把信号从芯片120传输至天线140。
在一些例子中，电路部130可以是整合被动元件层。亦即，电路部130包括至少一被动元件，例如是电阻、电容或电感，使电路部130及半导体结构100形成一具有无线功能的整合被动元件层（Integrated Passive Device,IPD）。接地层131、微带线133、相位位移器135、图案化导电层136、馈入电路137及天线140的形成可整合于整合被动元件层的工艺中。此外，被动元件可形成于图案化导电层136或其它层结构中。
电路部130、接地层131与基板110分别具有外侧面130s、131s及110s，其中电路部130的外侧面130s、接地层131的外侧面131s与基板110的外侧面110s实质上齐平。接地层131延伸至半导体结构100的边界以提供电磁干扰屏蔽功能。
芯片120可以是收发芯片（transceiver chip），其设于电路部130上，以处理天线140的无线信号。一些实施例中，芯片120可以是覆晶（flip chip），其以朝下方位设于电路部130上，且通过数个焊球121电性连接于电路部130。焊球121被底胶（under-fill）125包覆。另一例中，芯片120可以朝上方位设于电路部130上，且通过数个焊线（未绘示）电性连接于电路部130。形成于芯片与电路部130之间的底胶125包覆且保护焊球121。
天线140被天线介电层145覆盖且形成于基板110的第二表面110u上。天线140与波导槽131a重迭，如产生于基板110与天线140之间的第二耦合共振的垂直方位所示。天线介电层145可由相似于第一介电层132的材料制成。
请参照图1B，其绘示图1A的俯视图。本例中，波导槽131a形成2×2阵列型。另一例中，波导槽131a可形成n×m阵列型，以改变天线140的无线信号的场形，其中n及m可以是任意正整数。另一例中，波导槽131a可以排列成任意形式，且波导槽131a的数量可以是单个。实务上，波导槽131a的排列形式及数量可视天线140的阻抗匹配而定。
如图1B所示，微带线133实质上垂直于波导槽131a延伸，使微带线133及波导槽131a共同形成交叉结构，其导致近等振幅（near-equal amplitudes）的二简并正交模态（near-degenerate orthogonal mode）的激态及90度相位差。天线140平行于微带线133的长度L1愈长，共振频率愈低。一例中，长度L1小于1000毫米，以获得大频宽的无线信号及60GHz的天线。
相邻二微带线133之间距L2大约是天线140的无线信号波长的一半，使辐射至相邻二微带线133的中间位置的无线信号产生破坏性干涉（信号强度抵消），因此，更多无线信号强度从微带线133朝上辐射。此外，天线140、波导槽131a及微带线133彼此重迭，以更提升天线140的增益。
请参照图1C，其绘示图1A的底视图。焊球150形成于电路部130（绘示于图1A）且环绕芯片120。半导体结构100通过焊球150电性连接于一印刷电路板（printed circuitboard,PCB）。焊球150突出于芯片120的下表面，因此，可确保半导体结构100与印刷电路板电性连接。此外，波导槽131a环绕芯片120，但未与芯片120重迭，使芯片120可重迭于接地层131（斜线区域）的屏蔽部1311（不包括波导槽131a）且可降低电磁干扰。
请参照图2，其绘示图1A中天线的X-Z平面的场形图。由于波导槽131a及微带线133排列成阵列形式，故天线140的介电性是优良且-Z方向的增益可达10dBi。
请参照图3，其绘示图1A中天线的反射损失（return loss）示意图。因为二耦合共振，故天线140的频宽（反射损失在-10dBi以下）介于例如是56GHz与64GHz之间。
请参照图4，其绘示依照本发明另一实施例的半导体结构200的剖视图。半导体结构200包括基板110、芯片120、电路部130、数个天线140、天线介电层145及数个焊球150。
电路部130包括接地层131、第一介电层132及微带线133。接地层131包括屏蔽部1311及单个波导槽131a覆盖微带线133。第一介电层132与接地层131重迭，使微带线133通过第一介电层132与波导槽131a隔离。芯片120设于电路部130上且通过数个焊球121电性连接于电路部130。芯片120与接地层131的屏蔽部1311（不具波导槽131a的完整部分）重迭，以达到电磁干扰防护作用。
综上所述，虽然本发明已以较佳实施例揭露如上，然其并非用以限定本发明。本发明所属技术领域中具有通常知识者，在不脱离本发明的精神和范围内，当可作各种的更动与润饰。因此，本发明的保护范围当视权利要求书所界定者为准。

Claims (13)

1.一种半导体结构，其特征在于，包括：
一基板，具有相对的一第一表面及一第二表面；
一电路部，形成于该基板的该第一表面上且包括一波导槽及一微带线，该微带线与该波导槽重迭；
一芯片，设于该电路部上，其中该微带线位于该电路部且位于该芯片的一覆盖区之外；以及
一天线，形成于该基板的该第二表面且与该波导槽重迭。
2.如权利要求1所述的半导体结构，其特征在于，该电路部包括一接地层，该接地层覆盖该芯片。
3.如权利要求2所述的半导体结构，其特征在于，该波导槽形成于该接地层。
4.如权利要求1所述的半导体结构，其特征在于，该电路部具有数个该波导槽，该些波导槽未与该芯片重迭。
5.如权利要求1所述的半导体结构，其特征在于，该微带线的延伸方向实质上垂直于该波导槽的延伸方向。
6.如权利要求1所述的半导体结构，其特征在于，该天线与该波导槽重迭。
7.如权利要求1所述的半导体结构，其特征在于，更包括：
一天线介电层，形成于该基板的该第二表面且覆盖该天线。
8.一种半导体结构，其特征在于，包括：
一基板，具有相对的一第一表面及一第二表面；
一整合被动元件层，形成于该基板的该第一表面且包括数个波导槽及数个微带线，该些微带线重迭于该些波导槽，其中该些波导槽及该些微带线排列成阵列型；
一芯片，设于该整合被动元件层上，其中该微带线位于该整合被动元件层且位于该芯片的一覆盖区之外；以及
数个天线，形成于该基板的该第二表面且与该些波导槽重迭。
9.如权利要求8所述的半导体结构，其特征在于，该整合被动元件层包括一接地层，该接地层覆盖该芯片。
10.如权利要求8所述的半导体结构，其特征在于，各该微带线的延伸方向实质上垂直于对应的该波导槽的延伸方向。
11.如权利要求8所述的半导体结构，其特征在于，该些天线与该些波导槽重迭。
12.如权利要求8所述的半导体结构，其特征在于，该基板由玻璃制成。
13.如权利要求8所述的半导体结构，其特征在于，该整合被动元件层包括：
一接地层；以及
一第一介电层，形成于该接地层与该些微带线之间。
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Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101616625B1 (ko) * 2014-07-30 2016-04-28 삼성전기주식회사 반도체 패키지 및 그 제조방법
TWI655719B (zh) * 2015-08-12 2019-04-01 矽品精密工業股份有限公司 電子模組
US11335651B2 (en) * 2015-12-22 2022-05-17 Intel Corporation Microelectronic devices designed with compound semiconductor devices and integrated on an inter die fabric
US11195787B2 (en) * 2016-02-17 2021-12-07 Infineon Technologies Ag Semiconductor device including an antenna
US10224255B2 (en) * 2016-06-14 2019-03-05 Nxp Usa, Inc. Shielded and packaged electronic devices, electronic assemblies, and methods
US10128192B2 (en) * 2016-07-22 2018-11-13 Mediatek Inc. Fan-out package structure
TWI653780B (zh) * 2016-12-22 2019-03-11 日商京瓷股份有限公司 天線基板及其製造方法
TWI653785B (zh) * 2016-12-22 2019-03-11 日商京瓷股份有限公司 天線基板
US11394103B2 (en) * 2017-07-18 2022-07-19 Samsung Electro-Mechanics Co., Ltd. Antenna module and manufacturing method thereof
TWI667743B (zh) * 2017-10-20 2019-08-01 矽品精密工業股份有限公司 電子封裝件及其製法
KR102028714B1 (ko) * 2017-12-06 2019-10-07 삼성전자주식회사 안테나 모듈 및 안테나 모듈 제조 방법
CN110277628B (zh) 2018-03-15 2020-11-17 华为技术有限公司 一种天线和通信装置
TWI668831B (zh) * 2018-04-17 2019-08-11 矽品精密工業股份有限公司 電子裝置與電子封裝件
CN110828962B (zh) 2018-08-09 2021-08-03 财团法人工业技术研究院 天线阵列模块及其制造方法
US11605877B2 (en) 2018-09-07 2023-03-14 Advanced Semiconductor Engineering, Inc. Semiconductor device package and method of manufacturing the same
US10903561B2 (en) 2019-04-18 2021-01-26 Advanced Semiconductor Engineering, Inc. Semiconductor device package and method of manufacturing the same
US11715886B2 (en) * 2020-05-08 2023-08-01 Mobix Labs, Inc. Low-cost, IPD and laminate based antenna array module

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001308631A (ja) * 2000-04-18 2001-11-02 Sharp Corp アンテナ一体化マイクロ波・ミリ波モジュール
CN1460397A (zh) * 2001-03-29 2003-12-03 Tdk股份有限公司 高频模块
CN1595649A (zh) * 2003-09-10 2005-03-16 Tdk株式会社 电子元件模件及其制造方法
CN1606234A (zh) * 2003-10-08 2005-04-13 京瓷株式会社 高频模块及通信设备
JP2005340790A (ja) * 2004-04-30 2005-12-08 Sharp Corp 高周波半導体装置、送信装置および受信装置
CN1723587A (zh) * 2002-11-07 2006-01-18 碎云股份有限公司 含微型天线的集成电路封装

Family Cites Families (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4814205A (en) 1983-12-02 1989-03-21 Omi International Corporation Process for rejuvenation electroless nickel solution
US5557142A (en) 1991-02-04 1996-09-17 Motorola, Inc. Shielded semiconductor device package
US5166772A (en) 1991-02-22 1992-11-24 Motorola, Inc. Transfer molded semiconductor device package with integral shield
US5353498A (en) 1993-02-08 1994-10-11 General Electric Company Method for fabricating an integrated circuit module
US5355016A (en) 1993-05-03 1994-10-11 Motorola, Inc. Shielded EPROM package
US5639989A (en) 1994-04-19 1997-06-17 Motorola Inc. Shielded electronic component assembly and method for making the same
US5677511A (en) 1995-03-20 1997-10-14 National Semiconductor Corporation Overmolded PC board with ESD protection and EMI suppression
JPH08288686A (ja) 1995-04-20 1996-11-01 Nec Corp 半導体装置
JP3432982B2 (ja) 1995-12-13 2003-08-04 沖電気工業株式会社 表面実装型半導体装置の製造方法
US5998867A (en) 1996-02-23 1999-12-07 Honeywell Inc. Radiation enhanced chip encapsulant
US5694300A (en) 1996-04-01 1997-12-02 Northrop Grumman Corporation Electromagnetically channelized microwave integrated circuit
US5776798A (en) 1996-09-04 1998-07-07 Motorola, Inc. Semiconductor package and method thereof
US6150193A (en) 1996-10-31 2000-11-21 Amkor Technology, Inc. RF shielded device
US5895229A (en) 1997-05-19 1999-04-20 Motorola, Inc. Microelectronic package including a polymer encapsulated die, and method for forming same
JP3834426B2 (ja) 1997-09-02 2006-10-18 沖電気工業株式会社 半導体装置
US6757181B1 (en) 2000-08-22 2004-06-29 Skyworks Solutions, Inc. Molded shield structures and method for their fabrication
JP3718131B2 (ja) 2001-03-16 2005-11-16 松下電器産業株式会社 高周波モジュールおよびその製造方法
US6900383B2 (en) 2001-03-19 2005-05-31 Hewlett-Packard Development Company, L.P. Board-level EMI shield that adheres to and conforms with printed circuit board component and board surfaces
JP3878430B2 (ja) 2001-04-06 2007-02-07 株式会社ルネサステクノロジ 半導体装置
US6614102B1 (en) 2001-05-04 2003-09-02 Amkor Technology, Inc. Shielded semiconductor leadframe package
US6686649B1 (en) 2001-05-14 2004-02-03 Amkor Technology, Inc. Multi-chip semiconductor package with integral shield and antenna
US6740959B2 (en) 2001-08-01 2004-05-25 International Business Machines Corporation EMI shielding for semiconductor chip carriers
US7633765B1 (en) 2004-03-23 2009-12-15 Amkor Technology, Inc. Semiconductor package including a top-surface metal layer for implementing circuit features
US7161252B2 (en) 2002-07-19 2007-01-09 Matsushita Electric Industrial Co., Ltd. Module component
JP4178880B2 (ja) 2002-08-29 2008-11-12 松下電器産業株式会社 モジュール部品
US6781231B2 (en) 2002-09-10 2004-08-24 Knowles Electronics Llc Microelectromechanical system package with environmental and interference shield
US6962869B1 (en) 2002-10-15 2005-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. SiOCH low k surface protection layer formation by CxHy gas plasma treatment
WO2004060034A1 (ja) 2002-12-24 2004-07-15 Matsushita Electric Industrial Co., Ltd. 電子部品内蔵モジュール
US20040150097A1 (en) 2003-01-30 2004-08-05 International Business Machines Corporation Optimized conductive lid mounting for integrated circuit chip carriers
TWI235469B (en) 2003-02-07 2005-07-01 Siliconware Precision Industries Co Ltd Thermally enhanced semiconductor package with EMI shielding
US7187060B2 (en) 2003-03-13 2007-03-06 Sanyo Electric Co., Ltd. Semiconductor device with shield
US7109410B2 (en) 2003-04-15 2006-09-19 Wavezero, Inc. EMI shielding for electronic component packaging
JP2004327641A (ja) 2003-04-24 2004-11-18 Tdk Corp 電子部品モジュール
JP4377157B2 (ja) 2003-05-20 2009-12-02 Ｎｅｃエレクトロニクス株式会社 半導体装置用パッケージ
US7129422B2 (en) 2003-06-19 2006-10-31 Wavezero, Inc. EMI absorbing shielding for a printed circuit board
TWI247410B (en) * 2003-07-03 2006-01-11 Advanced Semiconductor Eng Semiconductor package structure with a microstrip antenna
KR100541084B1 (ko) 2003-08-20 2006-01-11 삼성전기주식회사 표면 탄성파 필터 패키지 제조방법 및 그에 사용되는패키지 시트
JP2005072095A (ja) 2003-08-20 2005-03-17 Alps Electric Co Ltd 電子回路ユニットおよびその製造方法
US7030469B2 (en) 2003-09-25 2006-04-18 Freescale Semiconductor, Inc. Method of forming a semiconductor package and structure thereof
US7042398B2 (en) 2004-06-23 2006-05-09 Industrial Technology Research Institute Apparatus of antenna with heat slug and its fabricating process
US7615856B2 (en) 2004-09-01 2009-11-10 Sanyo Electric Co., Ltd. Integrated antenna type circuit apparatus
US7327015B2 (en) 2004-09-20 2008-02-05 Advanced Semiconductor Engineering, Inc. Semiconductor device package
US7629674B1 (en) 2004-11-17 2009-12-08 Amkor Technology, Inc. Shielded package having shield fence
US7656047B2 (en) 2005-01-05 2010-02-02 Advanced Semiconductor Engineering, Inc. Semiconductor device package and manufacturing method
US7633170B2 (en) 2005-01-05 2009-12-15 Advanced Semiconductor Engineering, Inc. Semiconductor device package and manufacturing method thereof
US20090230487A1 (en) 2005-03-16 2009-09-17 Yamaha Corporation Semiconductor device, semiconductor device manufacturing method and lid frame
JP4614278B2 (ja) 2005-05-25 2011-01-19 アルプス電気株式会社 電子回路ユニット、及びその製造方法
US7451539B2 (en) 2005-08-08 2008-11-18 Rf Micro Devices, Inc. Method of making a conformal electromagnetic interference shield
US8220145B2 (en) 2007-06-27 2012-07-17 Rf Micro Devices, Inc. Isolated conformal shielding
CN101300911B (zh) 2005-11-28 2010-10-27 株式会社村田制作所 电路模块以及制造电路模块的方法
US7504721B2 (en) 2006-01-19 2009-03-17 International Business Machines Corporation Apparatus and methods for packaging dielectric resonator antennas with integrated circuit chips
US7342303B1 (en) 2006-02-28 2008-03-11 Amkor Technology, Inc. Semiconductor device having RF shielding and method therefor
DE102006019080B3 (de) 2006-04-25 2007-08-30 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Herstellungsverfahren für ein gehäustes Bauelement
CN101617400A (zh) 2007-01-31 2009-12-30 富士通微电子株式会社 半导体器件及其制造方法
US7675465B2 (en) 2007-05-22 2010-03-09 Sibeam, Inc. Surface mountable integrated circuit packaging scheme
US7576415B2 (en) 2007-06-15 2009-08-18 Advanced Semiconductor Engineering, Inc. EMI shielded semiconductor package
US7745910B1 (en) 2007-07-10 2010-06-29 Amkor Technology, Inc. Semiconductor device having RF shielding and method therefor
US20090035895A1 (en) 2007-07-30 2009-02-05 Advanced Semiconductor Engineering, Inc. Chip package and chip packaging process thereof
US7687899B1 (en) 2007-08-07 2010-03-30 Amkor Technology, Inc. Dual laminate package structure with embedded elements
US7808439B2 (en) 2007-09-07 2010-10-05 University Of Tennessee Reserch Foundation Substrate integrated waveguide antenna array
EP2051298B1 (en) 2007-10-18 2012-09-19 Sencio B.V. Integrated Circuit Package
US8022511B2 (en) 2008-02-05 2011-09-20 Advanced Semiconductor Engineering, Inc. Semiconductor device packages with electromagnetic interference shielding
US8350367B2 (en) 2008-02-05 2013-01-08 Advanced Semiconductor Engineering, Inc. Semiconductor device packages with electromagnetic interference shielding
US7989928B2 (en) 2008-02-05 2011-08-02 Advanced Semiconductor Engineering Inc. Semiconductor device packages with electromagnetic interference shielding
US8212339B2 (en) 2008-02-05 2012-07-03 Advanced Semiconductor Engineering, Inc. Semiconductor device packages with electromagnetic interference shielding
TWI370530B (en) 2008-05-21 2012-08-11 Advanced Semiconductor Eng Semiconductor package having an antenna
US7851893B2 (en) 2008-06-10 2010-12-14 Stats Chippac, Ltd. Semiconductor device and method of connecting a shielding layer to ground through conductive vias
US7829981B2 (en) 2008-07-21 2010-11-09 Advanced Semiconductor Engineering, Inc. Semiconductor device packages with electromagnetic interference shielding
US8410584B2 (en) 2008-08-08 2013-04-02 Advanced Semiconductor Engineering, Inc. Semiconductor device packages with electromagnetic interference shielding
US8058714B2 (en) 2008-09-25 2011-11-15 Skyworks Solutions, Inc. Overmolded semiconductor package with an integrated antenna
US20100110656A1 (en) 2008-10-31 2010-05-06 Advanced Semiconductor Engineering, Inc. Chip package and manufacturing method thereof
CN102292873B (zh) 2008-12-12 2014-12-17 南洋理工大学 栅格阵列天线及其集成结构
US20100207257A1 (en) 2009-02-17 2010-08-19 Advanced Semiconductor Engineering, Inc. Semiconductor package and manufacturing method thereof
US8110902B2 (en) 2009-02-19 2012-02-07 Advanced Semiconductor Engineering, Inc. Chip package and manufacturing method thereof
US8030750B2 (en) 2009-11-19 2011-10-04 Advanced Semiconductor Engineering, Inc. Semiconductor device packages with electromagnetic interference shielding
US8378466B2 (en) 2009-11-19 2013-02-19 Advanced Semiconductor Engineering, Inc. Wafer-level semiconductor device packages with electromagnetic interference shielding
TWI497679B (zh) 2009-11-27 2015-08-21 Advanced Semiconductor Eng 半導體封裝件及其製造方法
US9007273B2 (en) 2010-09-09 2015-04-14 Advances Semiconductor Engineering, Inc. Semiconductor package integrated with conformal shield and antenna

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001308631A (ja) * 2000-04-18 2001-11-02 Sharp Corp アンテナ一体化マイクロ波・ミリ波モジュール
CN1460397A (zh) * 2001-03-29 2003-12-03 Tdk股份有限公司 高频模块
CN1723587A (zh) * 2002-11-07 2006-01-18 碎云股份有限公司 含微型天线的集成电路封装
CN1595649A (zh) * 2003-09-10 2005-03-16 Tdk株式会社 电子元件模件及其制造方法
CN1606234A (zh) * 2003-10-08 2005-04-13 京瓷株式会社 高频模块及通信设备
JP2005340790A (ja) * 2004-04-30 2005-12-08 Sharp Corp 高周波半導体装置、送信装置および受信装置

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