CN104037127A - 一种多晶硅层及显示基板的制备方法、显示基板 - Google Patents

一种多晶硅层及显示基板的制备方法、显示基板 Download PDF

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Publication number
CN104037127A
CN104037127A CN201410258999.XA CN201410258999A CN104037127A CN 104037127 A CN104037127 A CN 104037127A CN 201410258999 A CN201410258999 A CN 201410258999A CN 104037127 A CN104037127 A CN 104037127A
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China
Prior art keywords
film transistor
bulge
amorphous silicon
layer
thin
Prior art date
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Pending
Application number
CN201410258999.XA
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English (en)
Chinese (zh)
Inventor
张慧娟
亢澎涛
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Filing date
Publication date
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Priority to CN201410258999.XA priority Critical patent/CN104037127A/zh
Publication of CN104037127A publication Critical patent/CN104037127A/zh
Priority to PCT/CN2014/092061 priority patent/WO2015188594A1/fr
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1229—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with different crystal properties within a device or between different devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L2021/775—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate comprising a plurality of TFTs on a non-semiconducting substrate, e.g. driving circuits for AMLCDs

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
CN201410258999.XA 2014-06-11 2014-06-11 一种多晶硅层及显示基板的制备方法、显示基板 Pending CN104037127A (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201410258999.XA CN104037127A (zh) 2014-06-11 2014-06-11 一种多晶硅层及显示基板的制备方法、显示基板
PCT/CN2014/092061 WO2015188594A1 (fr) 2014-06-11 2014-11-24 Procédé de préparation de couche de silicium polycristallin et de substrat d'affichage, et substrat d'affichage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410258999.XA CN104037127A (zh) 2014-06-11 2014-06-11 一种多晶硅层及显示基板的制备方法、显示基板

Publications (1)

Publication Number Publication Date
CN104037127A true CN104037127A (zh) 2014-09-10

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CN201410258999.XA Pending CN104037127A (zh) 2014-06-11 2014-06-11 一种多晶硅层及显示基板的制备方法、显示基板

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CN (1) CN104037127A (fr)
WO (1) WO2015188594A1 (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015188594A1 (fr) * 2014-06-11 2015-12-17 京东方科技集团股份有限公司 Procédé de préparation de couche de silicium polycristallin et de substrat d'affichage, et substrat d'affichage
CN105633076A (zh) * 2016-01-04 2016-06-01 京东方科技集团股份有限公司 一种显示基板及其制作方法和显示装置
CN105990098A (zh) * 2015-02-16 2016-10-05 上海和辉光电有限公司 形成多晶硅薄膜的方法及包含多晶硅薄膜的薄膜晶体管
CN108028201A (zh) * 2015-09-17 2018-05-11 堺显示器制品株式会社 薄膜晶体管和薄膜晶体管的制造方法
CN109860109A (zh) * 2019-02-28 2019-06-07 武汉华星光电半导体显示技术有限公司 一种薄膜晶体管及其制作方法、显示面板
CN110120464A (zh) * 2019-05-27 2019-08-13 京东方科技集团股份有限公司 显示基板及其制备方法、显示装置
CN112002711A (zh) * 2020-08-14 2020-11-27 Tcl华星光电技术有限公司 阵列基板及其制备方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113394299B (zh) * 2021-06-16 2024-08-06 京东方科技集团股份有限公司 薄膜晶体管、阵列基板及其制备方法、显示面板

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CN1554123A (zh) * 2002-06-07 2004-12-08 索尼株式会社 显示装置及其制造方法、以及投影型显示装置
CN1573843A (zh) * 2003-06-05 2005-02-02 三星Sdi株式会社 具有多晶硅薄膜晶体管的平板显示装置
CN1622718A (zh) * 2004-12-15 2005-06-01 友达光电股份有限公司 选择性激光结晶的方法及其制造的显示面板
CN1629708A (zh) * 2004-02-26 2005-06-22 友达光电股份有限公司 液晶显示装置及其制造方法
CN1645612A (zh) * 2005-02-23 2005-07-27 友达光电股份有限公司 具复合多晶硅层的半导体结构及其应用的显示面板
TW200532285A (en) * 2004-03-24 2005-10-01 Toppoly Optoelectronics Corp Planar display panel structure and its producing method
US20080182392A1 (en) * 2007-01-29 2008-07-31 Innolux Display Corp. Method for fabricating polysilicon layer with large and uniform grains
CN103681776A (zh) * 2013-12-24 2014-03-26 京东方科技集团股份有限公司 低温多晶硅薄膜及其制备方法、薄膜晶体管和显示装置

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TWI222752B (en) * 2003-03-07 2004-10-21 Au Optronics Corp Method for manufacturing a thin film transistor
TWI268122B (en) * 2005-01-25 2006-12-01 Au Optronics Corp Semiconductor structure having multilayer of polysilicon and display panel applied with the same
CN100501550C (zh) * 2005-11-10 2009-06-17 友达光电股份有限公司 具有多晶硅层的显示面板及其制造方法
CN103219228B (zh) * 2013-03-11 2016-05-25 京东方科技集团股份有限公司 多晶硅层的制作方法和多晶硅薄膜晶体管及其制造方法
CN103715226A (zh) * 2013-12-12 2014-04-09 京东方科技集团股份有限公司 Oled阵列基板及其制备方法、显示面板及显示装置
CN104037127A (zh) * 2014-06-11 2014-09-10 京东方科技集团股份有限公司 一种多晶硅层及显示基板的制备方法、显示基板

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1554123A (zh) * 2002-06-07 2004-12-08 索尼株式会社 显示装置及其制造方法、以及投影型显示装置
CN1573843A (zh) * 2003-06-05 2005-02-02 三星Sdi株式会社 具有多晶硅薄膜晶体管的平板显示装置
CN1629708A (zh) * 2004-02-26 2005-06-22 友达光电股份有限公司 液晶显示装置及其制造方法
TW200532285A (en) * 2004-03-24 2005-10-01 Toppoly Optoelectronics Corp Planar display panel structure and its producing method
CN1622718A (zh) * 2004-12-15 2005-06-01 友达光电股份有限公司 选择性激光结晶的方法及其制造的显示面板
CN1645612A (zh) * 2005-02-23 2005-07-27 友达光电股份有限公司 具复合多晶硅层的半导体结构及其应用的显示面板
US20080182392A1 (en) * 2007-01-29 2008-07-31 Innolux Display Corp. Method for fabricating polysilicon layer with large and uniform grains
CN103681776A (zh) * 2013-12-24 2014-03-26 京东方科技集团股份有限公司 低温多晶硅薄膜及其制备方法、薄膜晶体管和显示装置

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015188594A1 (fr) * 2014-06-11 2015-12-17 京东方科技集团股份有限公司 Procédé de préparation de couche de silicium polycristallin et de substrat d'affichage, et substrat d'affichage
CN105990098A (zh) * 2015-02-16 2016-10-05 上海和辉光电有限公司 形成多晶硅薄膜的方法及包含多晶硅薄膜的薄膜晶体管
CN105990098B (zh) * 2015-02-16 2019-09-13 上海和辉光电有限公司 形成多晶硅薄膜的方法及包含多晶硅薄膜的薄膜晶体管
CN108028201A (zh) * 2015-09-17 2018-05-11 堺显示器制品株式会社 薄膜晶体管和薄膜晶体管的制造方法
CN108028201B (zh) * 2015-09-17 2021-06-04 堺显示器制品株式会社 薄膜晶体管和薄膜晶体管的制造方法
CN105633076A (zh) * 2016-01-04 2016-06-01 京东方科技集团股份有限公司 一种显示基板及其制作方法和显示装置
WO2017117901A1 (fr) * 2016-01-04 2017-07-13 京东方科技集团股份有限公司 Substrat d'affichage, son procédé de fabrication et dispositif d'affichage
CN109860109A (zh) * 2019-02-28 2019-06-07 武汉华星光电半导体显示技术有限公司 一种薄膜晶体管及其制作方法、显示面板
CN110120464A (zh) * 2019-05-27 2019-08-13 京东方科技集团股份有限公司 显示基板及其制备方法、显示装置
CN112002711A (zh) * 2020-08-14 2020-11-27 Tcl华星光电技术有限公司 阵列基板及其制备方法

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Application publication date: 20140910