CN104037087A - 在衬底上制造半导体器件的方法以及半导体器件 - Google Patents
在衬底上制造半导体器件的方法以及半导体器件 Download PDFInfo
- Publication number
- CN104037087A CN104037087A CN201410187523.1A CN201410187523A CN104037087A CN 104037087 A CN104037087 A CN 104037087A CN 201410187523 A CN201410187523 A CN 201410187523A CN 104037087 A CN104037087 A CN 104037087A
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- China
- Prior art keywords
- metal oxide
- adjacent
- electrical insulator
- adjacent metal
- layer
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 35
- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 239000000758 substrate Substances 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 135
- 150000004706 metal oxides Chemical group 0.000 claims abstract description 134
- 239000000463 material Substances 0.000 claims abstract description 79
- 230000003993 interaction Effects 0.000 claims abstract description 56
- 238000004381 surface treatment Methods 0.000 claims abstract description 21
- 230000008021 deposition Effects 0.000 claims abstract description 10
- 238000000151 deposition Methods 0.000 claims description 14
- 239000002800 charge carrier Substances 0.000 claims description 8
- 239000011149 active material Substances 0.000 claims description 7
- 238000002161 passivation Methods 0.000 claims description 7
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- -1 ITO Inorganic materials 0.000 claims description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 3
- 238000005137 deposition process Methods 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 238000007598 dipping method Methods 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 2
- 238000007639 printing Methods 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 238000000992 sputter etching Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 46
- 239000000615 nonconductor Substances 0.000 claims 26
- 238000009826 distribution Methods 0.000 claims 3
- 230000003247 decreasing effect Effects 0.000 claims 2
- 239000002344 surface layer Substances 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- 239000007788 liquid Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 25
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 23
- 239000001301 oxygen Substances 0.000 description 23
- 229910052760 oxygen Inorganic materials 0.000 description 23
- 238000010586 diagram Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 239000004033 plastic Substances 0.000 description 5
- 229920003023 plastic Polymers 0.000 description 5
- 101100489577 Solanum lycopersicum TFT10 gene Proteins 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 239000005300 metallic glass Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
Claims (17)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/173,995 | 2008-07-16 | ||
US12/173,995 US7812346B2 (en) | 2008-07-16 | 2008-07-16 | Metal oxide TFT with improved carrier mobility |
CN200980127697.6A CN102099938B (zh) | 2008-07-16 | 2009-07-14 | 具有改进载流子迁移率的金属氧化物tft |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200980127697.6A Division CN102099938B (zh) | 2008-07-16 | 2009-07-14 | 具有改进载流子迁移率的金属氧化物tft |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104037087A true CN104037087A (zh) | 2014-09-10 |
CN104037087B CN104037087B (zh) | 2017-08-08 |
Family
ID=41529496
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410187523.1A Expired - Fee Related CN104037087B (zh) | 2008-07-16 | 2009-07-14 | 在衬底上制造半导体器件的方法以及半导体器件 |
CN200980127697.6A Expired - Fee Related CN102099938B (zh) | 2008-07-16 | 2009-07-14 | 具有改进载流子迁移率的金属氧化物tft |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200980127697.6A Expired - Fee Related CN102099938B (zh) | 2008-07-16 | 2009-07-14 | 具有改进载流子迁移率的金属氧化物tft |
Country Status (6)
Country | Link |
---|---|
US (1) | US7812346B2 (zh) |
EP (2) | EP2308110A4 (zh) |
JP (2) | JP5926052B2 (zh) |
KR (1) | KR20110053961A (zh) |
CN (2) | CN104037087B (zh) |
WO (1) | WO2010009128A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105679832A (zh) * | 2014-12-05 | 2016-06-15 | 三星显示有限公司 | 薄膜晶体管基板及其制造方法 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101810699B1 (ko) | 2009-06-30 | 2018-01-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제작 방법 |
EP3236504A1 (en) | 2009-06-30 | 2017-10-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
CN102460713B (zh) | 2009-06-30 | 2016-12-07 | 株式会社半导体能源研究所 | 用于制造半导体器件的方法 |
CN104835850B (zh) | 2009-07-10 | 2018-10-26 | 株式会社半导体能源研究所 | 半导体器件 |
CN103151266B (zh) | 2009-11-20 | 2016-08-03 | 株式会社半导体能源研究所 | 用于制造半导体器件的方法 |
WO2011111503A1 (en) * | 2010-03-08 | 2011-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
WO2011135987A1 (en) * | 2010-04-28 | 2011-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
KR101808198B1 (ko) | 2010-05-21 | 2017-12-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
US20120001179A1 (en) * | 2010-07-02 | 2012-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
WO2012018377A2 (en) | 2010-07-31 | 2012-02-09 | The Scripps Research Institute | Liposome targeting compounds and related uses |
WO2012029596A1 (en) * | 2010-09-03 | 2012-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8716073B2 (en) * | 2011-07-22 | 2014-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for processing oxide semiconductor film and method for manufacturing semiconductor device |
US8841665B2 (en) | 2012-04-06 | 2014-09-23 | Electronics And Telecommunications Research Institute | Method for manufacturing oxide thin film transistor |
US9356156B2 (en) * | 2013-05-24 | 2016-05-31 | Cbrite Inc. | Stable high mobility MOTFT and fabrication at low temperature |
CN104979406B (zh) * | 2015-07-31 | 2018-05-25 | 京东方科技集团股份有限公司 | 薄膜晶体管、阵列基板及其制备方法和显示装置 |
CN105609564B (zh) * | 2016-03-14 | 2018-12-25 | 京东方科技集团股份有限公司 | 一种薄膜晶体管制造方法及薄膜晶体管 |
KR101914835B1 (ko) * | 2016-11-18 | 2018-11-02 | 아주대학교산학협력단 | 금속산화물 이종 접합 구조, 이의 제조방법 및 이를 포함하는 박막트랜지스터 |
US10224432B2 (en) * | 2017-03-10 | 2019-03-05 | Applied Materials, Inc. | Surface treatment process performed on devices for TFT applications |
Citations (4)
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US6133073A (en) * | 1996-02-23 | 2000-10-17 | Semiconductor Energy Laboratory Co., Ltd. | Thin film semiconductor and method for manufacturing the same, semiconductor device and method for manufacturing the same |
CN1516288A (zh) * | 2002-12-27 | 2004-07-28 | 株式会社半导体能源研究所 | 半导体器件及其制造方法、层离方法、以及转移方法 |
CN1735968A (zh) * | 2003-01-08 | 2006-02-15 | 株式会社半导体能源研究所 | 半导体器件及其制作方法 |
WO2008023553A1 (en) * | 2006-08-23 | 2008-02-28 | Canon Kabushiki Kaisha | Production method of thin film transistor using amorphous oxide semiconductor film |
Family Cites Families (13)
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US7271458B2 (en) * | 2002-04-15 | 2007-09-18 | The Board Of Trustees Of The Leland Stanford Junior University | High-k dielectric for thermodynamically-stable substrate-type materials |
JP2004335804A (ja) | 2003-05-08 | 2004-11-25 | Fuji Photo Film Co Ltd | 固体撮像素子およびその製造方法 |
JP5138163B2 (ja) * | 2004-11-10 | 2013-02-06 | キヤノン株式会社 | 電界効果型トランジスタ |
JP5126730B2 (ja) * | 2004-11-10 | 2013-01-23 | キヤノン株式会社 | 電界効果型トランジスタの製造方法 |
JP4870404B2 (ja) * | 2005-09-02 | 2012-02-08 | 財団法人高知県産業振興センター | 薄膜トランジスタの製法 |
JP4870403B2 (ja) * | 2005-09-02 | 2012-02-08 | 財団法人高知県産業振興センター | 薄膜トランジスタの製法 |
JP2007115735A (ja) * | 2005-10-18 | 2007-05-10 | Toppan Printing Co Ltd | トランジスタ |
JP5110803B2 (ja) * | 2006-03-17 | 2012-12-26 | キヤノン株式会社 | 酸化物膜をチャネルに用いた電界効果型トランジスタ及びその製造方法 |
JP4724585B2 (ja) | 2006-03-31 | 2011-07-13 | キヤノン株式会社 | 有機電界発光素子及び発光装置 |
JP5167560B2 (ja) * | 2006-03-31 | 2013-03-21 | 日本化薬株式会社 | 電界効果トランジスタ |
JP4609797B2 (ja) * | 2006-08-09 | 2011-01-12 | Nec液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
JP4332545B2 (ja) * | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
US7898042B2 (en) | 2006-11-07 | 2011-03-01 | Cbrite Inc. | Two-terminal switching devices and their methods of fabrication |
-
2008
- 2008-07-16 US US12/173,995 patent/US7812346B2/en not_active Expired - Fee Related
-
2009
- 2009-07-14 CN CN201410187523.1A patent/CN104037087B/zh not_active Expired - Fee Related
- 2009-07-14 EP EP09798655A patent/EP2308110A4/en not_active Withdrawn
- 2009-07-14 JP JP2011518841A patent/JP5926052B2/ja not_active Expired - Fee Related
- 2009-07-14 EP EP15199954.7A patent/EP3012869A1/en not_active Withdrawn
- 2009-07-14 KR KR1020117003529A patent/KR20110053961A/ko not_active Application Discontinuation
- 2009-07-14 CN CN200980127697.6A patent/CN102099938B/zh not_active Expired - Fee Related
- 2009-07-14 WO PCT/US2009/050542 patent/WO2010009128A1/en active Application Filing
-
2016
- 2016-02-04 JP JP2016019636A patent/JP6306069B2/ja not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6133073A (en) * | 1996-02-23 | 2000-10-17 | Semiconductor Energy Laboratory Co., Ltd. | Thin film semiconductor and method for manufacturing the same, semiconductor device and method for manufacturing the same |
CN1516288A (zh) * | 2002-12-27 | 2004-07-28 | 株式会社半导体能源研究所 | 半导体器件及其制造方法、层离方法、以及转移方法 |
CN1735968A (zh) * | 2003-01-08 | 2006-02-15 | 株式会社半导体能源研究所 | 半导体器件及其制作方法 |
WO2008023553A1 (en) * | 2006-08-23 | 2008-02-28 | Canon Kabushiki Kaisha | Production method of thin film transistor using amorphous oxide semiconductor film |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105679832A (zh) * | 2014-12-05 | 2016-06-15 | 三星显示有限公司 | 薄膜晶体管基板及其制造方法 |
CN105679832B (zh) * | 2014-12-05 | 2021-07-06 | 三星显示有限公司 | 薄膜晶体管基板及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20100012932A1 (en) | 2010-01-21 |
WO2010009128A1 (en) | 2010-01-21 |
EP3012869A1 (en) | 2016-04-27 |
CN102099938B (zh) | 2014-05-21 |
JP2016105502A (ja) | 2016-06-09 |
US7812346B2 (en) | 2010-10-12 |
JP6306069B2 (ja) | 2018-04-04 |
CN104037087B (zh) | 2017-08-08 |
CN102099938A (zh) | 2011-06-15 |
JP2011528510A (ja) | 2011-11-17 |
EP2308110A1 (en) | 2011-04-13 |
KR20110053961A (ko) | 2011-05-24 |
EP2308110A4 (en) | 2011-08-03 |
JP5926052B2 (ja) | 2016-06-01 |
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