CN103996631A - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

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Publication number
CN103996631A
CN103996631A CN201410048867.4A CN201410048867A CN103996631A CN 103996631 A CN103996631 A CN 103996631A CN 201410048867 A CN201410048867 A CN 201410048867A CN 103996631 A CN103996631 A CN 103996631A
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scolding tin
semiconductor chip
tin plate
welding
plate
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CN201410048867.4A
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松下毅
望月英司
西泽龙男
斋藤俊介
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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Abstract

本发明提供一种使用Sn-高Sb焊锡材料对绝缘电路基板与半导体芯片等进行焊接，并能获得空隙较少的良好的接合状态的焊接方法。对于表面的氧化膜较厚、浸润性较差的Sn-高Sb类焊锡材料，使用形成为可减少表面积的U字形状的焊锡板，来进行绝缘电路基板与半导体芯片等之间的焊锡接合，从而能够形成氧化膜较少，难以产生空隙的良好的焊锡接合面。并且，在形成为U字形状的焊锡板上层叠半导体芯片，在焊锡熔融前的状态下，在半导体芯片及绝缘电路基板的焊锡接合面的中央部设置有间隙，从而增大了与氢气之间的接触面积，因此能够提高还原反应对焊锡接合面的清洁效果。

Description

半导体装置的制造方法
技术领域
本发明涉及半导体装置的制造方法。尤其涉及对接合对象物进行焊接的方法。
背景技术
在安装有IGBT（绝缘栅双极晶体管）或FWD（续流二极管）等半导体芯片、被称为功率半导体模块的半导体装置的制造方法中，作为对半导体芯片和绝缘电路基板等进行接合的方法，大多使用焊接的方法。
以往，在进行焊接时，为了抑制焊锡或半导体芯片表面的氧化，从而保持焊锡良好的浸润性，在大多数情况下通常使用助焊剂。然而，在回流炉内进行加热使焊锡熔融时，会产生以下问题，即由于该助焊剂的存在使得回流炉的内部或绝缘电路基板等被污染。作为为了不产生污染而不使用助焊剂，且能提高焊锡的浸润性的方法，已知有下述方法，即向回流炉的内部导入氢气，利用使用氢的氧化还原反应（2H2＋O2→2H2O），来去除接合对象物的氧化膜（专利文献1）。
根据专利文献1所公开的焊接方法，在两个接合对象物中的一个接合对象物（例如绝缘电路基板）的接合面上配置焊锡板，并进一步在其上方层叠另一个接合对象物（例如半导体芯片），在这种状态下，一边提供还原性的气体（例如氢气），一边以超过焊锡熔融温度的温度对其进行加热，之后进行冷却。在这种焊接方法中，通过对焊锡及接合对象物提供氢自由基等游离基气体，在焊锡熔融时对包含焊锡的氧化物进行还原，同时也对接合对象物的接合面进行还原，从而进行清洁。由此，能够获得良好的焊锡浸润性。
在上述方法中为了提高由氢产生的还原反应，在使焊锡熔融时需要高效地向接合面提供氢气。然而实际上，例如在将平整的焊锡板配置于绝缘电路基板和半导体芯片之间的情况下，由于焊锡板紧密接合而在绝缘电路基板和半导体芯片的各接合面上没有间隙，因此无法向绝缘电路基板及半导体芯片的各接合面提供充分的氢气。
这里，在专利文献1中公开了以下焊接方法，即在焊锡板的外周部形成凸部形状，使接合面的氢气的接触面积增大，从而来提供还原效果。另一方面，近年来功率半导体模块的使用环境条件更为苛刻，从而对焊接接合面的要求也就更高，需要其进一步具有高强度/高耐热性。于是，应用机械接合强度较为优异的Sn-高Sb类焊锡材料来替代以往所使用的Sn-Ag类等焊锡材料。
然而，与Sn-Ag类等焊锡材料相比，Sn-高Sb类焊锡材料在焊锡板的表面上形成的氧化膜较厚，是焊锡难以浸润的材料。由此，在现有的焊接方法中，无法充分还原表面的氧化膜，于是出现了以下问题，即容易因焊接接合面上的氧化膜而导致空隙。尤其是在功率半导体模块与负载相连接的实际工作条件下，半导体芯片中央部的焊锡接合面上产生了空隙时，因空隙所产生的热阻的影响而导致发热的半导体芯片的温度上升，从而成为引起功率半导体模块的性能降低的主要原因。
作为减少这种焊锡接合面上的空隙的方法，公开了一种使用形成为框状的焊锡构件的方法（专利文献2）。这种方法是指通过增加封闭工序，并在之后的减压工序中将空隙一下子排出至外部，从而能获得减少焊锡内部的空隙这一结果的方法，上述封闭工序是在第一接合构件的接合面和第二接合构件的接合面之间配置形成为框状的焊锡构件，并进行熔融，利用第一接合构件、第二接合构件、及熔融后的焊锡构件来封闭接合区域的气氛气体的工序。
现有技术文献专利文献
专利文献1：日本专利特开2009－272554号公报专利文献2：日本专利特开2006－116564号公报
发明内容
发明所要解决的技术问题
然而，根据本发明人潜心研究的结果，当将上述方法中的焊接方法应用于Sn-高Sb类焊锡材料时，显然会产生下述问题。
首先，将专利文献1所记载的焊接方法应用于与现有的焊锡材料相比在表面所形成的氧化膜较厚的Sn－高Sb类焊锡材料的情况下，由于焊锡板在板状表面上形成有凹凸，焊锡板的表面积较大，从而焊锡中的氧化膜的量也在增大，因此仅仅增大与氢气的接触面积无法进行充分的还原处理。其结果是产生以下问题，即由于在半导体芯片与焊锡的接合面上残留有氧化膜，从而产生空隙，由此使得接合状态降低。
此外，将专利文献2所记载的焊接方法应用于与现有的焊锡材料相比粘度较高的Sn-高Sb类焊锡材料的情况下，可知增加在其内部封闭气氛气体的工序反倒使得气体残留在焊锡中，从而成为产生空隙的主要原因。
本发明的目的在于，鉴于上述问题，提供一种焊接方法，该焊接方法使用Sn-高Sb焊锡材料，且使得绝缘电路基板与半导体芯片等的焊锡接合中空隙较少、接合状态较为稳定。解决技术问题所采用的技术方案
为了实现上述目的，在本发明的一个实施方式中，半导体装置的制造方法包括：准备具有Ｕ字形状的焊锡板的准备工序；将所述焊锡板放置到基板上的放置工序；将半导体芯片放置到所述焊锡板上的放置工序；在还原性气体气氛中对所述焊锡板进行熔融的熔融工序；以及在所述焊锡板熔融后，将所述还原性气体的气压降低到比大气压更低的气压的减压工序。
发明效果
根据上述方法，对于表面的氧化膜较厚、浸润性较差的Sn-高Sb类焊锡材料，使用形成为可减少表面积的U字形状的焊锡板，来进行绝缘电路基板与半导体芯片等之间的焊锡接合，从而能够形成氧化膜较少，难以产生空隙的良好的焊锡接合面。
此外，对于在形成为U字形状的焊锡板上层叠了半导体芯片且尚处于焊锡熔融前的状态，由于在半导体芯片的中央部的下表面与绝缘电路基板之间设置有间隙，从而增大了与氢气之间的接触面积，因此能够提高还原反应对焊锡接合面的清洁效果。并且，在对所述状态进行加热而导致焊锡板熔融后的状态下，能够向半导体装置工作时发热量较大的半导体芯片的焊锡接合面的中央部，来提供不包含有氧化膜的浸润性较好的焊锡。因此，能够在焊锡接合面的中央部形成空隙较少的良好的焊锡接合面，从而能够降低热阻，能够最大限度地发挥半导体芯片的性能。
附图说明
图1是本发明的实施例所涉及的焊锡熔融前的功率单元部件的整体立体图。
图2是本发明的实施例所涉及的半导体装置的制造流程图。
图3是本发明的实施例所涉及的半导体芯片放置前的功率单元部件的主要部分的立体图。
图4是本发明的实施例所涉及的焊锡熔融前的功率单元部件的剖视图。
图5是本发明的实施例所涉及的焊接装置的主要部分的结构图。
图6是使用本发明的现有例及实施例所涉及的焊接方法进行焊接实验所得到的SAT图像。
具体实施方式
下面，基于附图对本发明的优选实施方式（实施例）进行说明。对于实施方式中共同的结构标注相同的符号，并省略其重复说明。
另外，本实施例不限于所说明的实施方式，在不脱离专利权利要求的范围所示的技术思想的范围内可以变更为各种各样的实施方式。图1示出本发明的实施方式所涉及的半导体装置的制造中焊接对象在焊锡熔融前的整体立体图。在图1所示的功率单元部件10中，为了使绝缘电路基板11与第一半导体芯片13及第二半导体芯片15进行电连接和热连接，在绝缘电路基板11上的规定的接合面上放置有第一焊锡板12及第二焊锡板14。并且在其上方放置有IGBT等第一半导体芯片13、以及FWD等第二半导体芯片15。
这里，在绝缘电路基板11中，在由陶瓷等绝缘材料形成的绝缘板11b的下表面上粘贴有由铜或铝材料形成的散热板11a。此外，在绝缘板11b的上表面，粘贴有由铜或铝材料形成的电路板11c，在该电路部11c上设置有功率半导体模块的电路图案通常将绝缘电路基板11称为DCB（Direct Copper Bonding：直接敷铜）基板或金属绝缘基板。
图2是本发明的实施方式所涉及的半导体装置制造的流程图，这里对图中的“（1）功率单元部件准备工序”进行说明。首先准备具有U字形状的第一焊锡板12及第二焊锡板14。接着将第一焊锡板12及第二焊锡板14放置在绝缘电路基板11的规定的接合面上。之后，在第一焊锡板12及第二焊锡板14上放置第一半导体芯片13及第二半导体芯片15，由此功率单元部件10准备完成。
图3是本发明的实施方式所涉及的焊接对象在半导体芯片放置前的主要部分的立体图，图4示出图1中IV-IV’处的剖视图。如图3及图4所示，根据第一半导体芯片13及第二半导体芯片15的外形尺寸调整第一焊锡板12及第二焊锡板14的尺寸，并且将第一焊锡板12及第二焊锡板14的中央部及外周的一条边挖空而使其形成俯视时的U字形状。
优选第一焊锡板12及第二焊锡板14的框宽形成为贴片机容易拾取的1～2mm左右，基于熔融接合时所需的焊锡厚度，由焊锡板的体积和表面积来决定焊锡板的厚度。例如在以厚度0.1mm焊锡对外形尺寸10mm×10mm的半导体芯片进行接合时，优选焊锡板的厚度形成为0.25mm，框宽为1.5mm。
与现有的焊接方法所使用的四边形形状（板状）的焊锡板相比，由于即使在相同的体积下，所述形成为U字形状的焊锡板的表面积也能够减少20～40％左右，因此能够减少焊锡材料表面所产生的氧化膜的量。此外，通过将焊锡板的形状形成为U字形状，从而与在接合部的每条边上准备多块细长的焊锡板的情况相比，能使得拾取等操作更为容易。
另外，本发明的实施方式所涉及的焊锡板由Sn-高Sb类焊锡材料构成。与Sn-Ag类等现有的无铅焊锡材料相比，该Sn-高Sb类焊锡材料的机械接合强度更高，能有助于实现具有高强度/高耐热性的功率半导体模块。另一方面，与现有的焊锡材料相比，虽然该Sn-高Sb类焊锡材料在表面所形成的氧化膜较厚，浸润性较差，但是通过使焊锡板形成为U字形状，从而能够减小表面积，因此能够获得降低较高的氧化膜的量的效果。
图5是本发明的实施方式所涉及的半导体装置的制造方法所使用的焊接装置的主要部分的结构图。
在能够保持气密状态的腔室21的内部设置有：加热板22，该加热板22上安装有加热器等加热单元（未图示）；以及冷却板23，该冷却板23上安装有冷却水等冷却单元（未图示）。
此外，还具备能够在所述加热板22及冷却板23之间移动的传送机构（未图示），从而使得由热传导率较高的碳材料等形成的传送托盘24能够在加热板22或冷却板23的上表面进行移动。此外，在该传送托盘24上能够装载多个图1至图3中所说明的功率单元部件10。
设置为用于对腔室21内的气氛气体进行排气的真空泵（未图示）经由排气管31及排气阀32连接至腔室21。
此外，能够给腔室21内部提供氢气气体的氢气供给机构（未图示）经由氢气供给管35及氢气供给阀36连接至腔室21，从而使得在焊接时能够提供氢气作为还原气体。并且，能够给腔室21内部提供氮气气体的氮气供给机构（未图示）经由氮气供给管33及氮气供给阀34连接至腔室21，从而使得在腔室21开放时能够提供氮气作为置换气体。
此外，还设置有释放压力的排出管（未图示），使得在还原性气体的气氛下，对所述功率单元部件10进行焊接处理的腔室21的内部压力不会变成正压状态。
关于使用该焊接装置进行焊接的工序的流程，通过图2所记载的半导体装置的制造流程图中的“（2）焊接工序”进行说明。
在腔室21内部开放的状态下，在冷却板23上的处于待机状态的传送托盘24上固定功率单元部件10，然后将腔室21关闭。接着，真空泵进行工作，排气阀32打开，腔室21内部的气体通过排气管31排出，在腔室21内部形成真空状态。
接着，排气阀32关闭，氢气供给阀36打开，向腔室21内部提供氢气，从而将腔室21内部的气氛置换为氢气。为了使腔室内部不变成正压状态，同时也将排出管打开。
接着，利用传送机构使传送托盘24在加热板22上移动，对功率单元部件10进行加热处理。
对固定在传送托盘24上的功率单元部件10进行加热，在达到使第一焊锡板12及第二焊锡板14充分熔融的温度后，关闭氢气供给阀36，同时再次打开排气阀32，排出腔室21内部的气体，使其形成为真空状态。
此时所形成的真空状态用于进行下述处理：即，在该压力差的作用下，使得混入在插入到绝缘电路基板11与第一半导体芯片13之间的第一焊锡板12内的气体排出，并使得混入在插入到绝缘电路基板11与第二半导体芯片15之间的第二焊锡板14内的气体排出，从而减少空隙。
腔室21的内部达到真空状态后，再次关闭排气阀32，打开氢气供给阀36，向腔室21的内部提供氢气来进行还原处理。
经过一定的时间后，传送托盘24移动至冷却板23，使功率单元部件10冷却。并且，关闭氢气供给阀36并同时打开排气阀32，排出腔室21内部的氢气。在腔室21内部的氢气被充分排出后，关闭排气阀32，打开氮气供给阀34，将腔室21内置换为氮气，之后，打开腔室21取出功率单元部件10。
由此，通过在氢气中进行加热，能够对焊锡熔融前的绝缘电路基板11、第一半导体芯片13及第二半导体芯片15的接合面进行直接还原，从而发挥进行表面清洁的效果。
并且在本实施例中，通过应用U字形的焊锡材料，从而使得即使对焊锡熔融前的绝缘电路基板11、第一半导体芯片13及第二半导体芯片15的接合面的中央部，也能顺利地提供氢气，因此能够进一步提高表面的清洁效果。
图6是利用本发明所涉及的焊接方法、使用Sn-13wt％Sb焊锡板对绝缘电路基板表面与半导体芯片进行焊接实验所得的SAT（Scanning Acoustic Tomograph：超音波图像装置）图像。本图像的观察范围对应于整个焊锡接合面，黑色的部分表示焊锡，白色的部分表示空隙。
图6（a）是在将一直以来所使用的四边形形状（板状）的焊锡板固定于绝缘电路基板与半导体芯片之间并进行加热，在焊锡熔融后使腔室21内部处于真空状态的情况下的SAT图像。
在这种情况下，由于使用冲压成四边形形状（板状）的焊锡板，因此在半导体芯片背面与Sn-高Sb类焊锡材料接触的部位会集中产生空隙。该空隙表示在半导体芯片背面的界面上出现了产生于Sn-高Sb类焊锡材料的表面的氧化膜，使得接合状态较差。
图6（b）是在将本发明所涉及的形成为U字形状的焊锡板固定于绝缘电路基板与半导体芯片之间并进行加热，在焊锡熔融后使腔室21内部处于真空状态的情况下的SAT图像，在半导体芯片背面的中央部几乎观察不到空隙，仅在半导体芯片的外周部的一部分产生有空隙。
这是由于形成在Sn-高Sb类焊锡材料的表面的氧化膜在加热以及熔融时也难以流出，从而残留在熔融前呈U字形状的接合面的外周部。另一方面，在接合面的中央部只有已去除氧化膜的熔融焊锡流出并浸润开来。在这种状态下，为了使焊锡板内部残留的空气排出，若进行上述的真空处理，则能够获得空隙得以减少的焊接接合面。
并且，可知，由于在本发明中应用了U字形状，因此不再会发生应用四边形形状（板状）的焊锡材料时所产生的在接合面的中央部残留有空隙的情况。
关于本发明所涉及的Sn-高Sb类焊锡材料的Sb的含量，优选为8～15wt％。其理由是，当Sb在8wt％以下时，其粘性与现有的Sn类焊锡材料没有太大的区别，因此即使不应用U字形状的焊锡材料，也能仅利用焊锡熔融后的排气工序将空隙去除。此外，当Sb在15wt％以上时，焊锡本身变得较脆，因而焊接后的半导体装置的可靠性变差。并且，若Sb达到15wt％以上，熔点会进一步增高到超过300℃，相应地也就需要提高焊接时的处理温度，然而由于半导体芯片等被接合物的耐热温度达不到如此高的程度，因此这些器件的耐热温度与焊接处理时的处理温度之间的裕量较小，从而导致被接合的对象物的电学特性变差。
标号说明
10 功率单元部件
11 绝缘电路基板
11a 散热板
11b 绝缘板
11c 电路板
12 第一焊锡板
13 第一半导体芯片
14 第二焊锡板
15 第二半导体芯片
21 腔室
22 加热板
23 冷却板
24 传送托盘
31 排气管
32 排气阀
33 氮气供给管
34 氮气供给阀
35 氢气供给管
36 氢气供给阀。

Claims (4)

1.一种半导体装置的制造方法，其特征在于，包括：准备具有U字形状的焊锡板的工序；在基板上放置所述焊锡板的工序；在所述焊锡板上放置半导体芯片的工序；在还原性气体的气氛中对所述焊锡板进行熔融的工序；以及减压工序，在该减压工序中，在所述焊锡板熔融后将所述还原性气体的气氛的气压降低至低于大气压的气压。
2.如权利要求1所述的半导体装置的制造方法，其特征在于，所述焊锡板包含有Sn及Sb。
3.如权利要求2所述的半导体装置的制造方法，其特征在于，所述焊锡板包含有8～15wt％的Sb。
4.如权利要求1至3的任一项所述的半导体装置的制造方法，其特征在于，
所述还原性气体为氢气。
CN201410048867.4A 2013-02-14 2014-02-12 半导体装置的制造方法 Pending CN103996631A (zh)

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