CN103956388A - 肖特基二极管半导体器件及其制备方法 - Google Patents
肖特基二极管半导体器件及其制备方法 Download PDFInfo
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- CN103956388A CN103956388A CN201410102567.XA CN201410102567A CN103956388A CN 103956388 A CN103956388 A CN 103956388A CN 201410102567 A CN201410102567 A CN 201410102567A CN 103956388 A CN103956388 A CN 103956388A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 96
- 230000004888 barrier function Effects 0.000 claims abstract description 39
- 239000002184 metal Substances 0.000 claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000004020 conductor Substances 0.000 claims abstract description 16
- 238000005530 etching Methods 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 23
- 239000002131 composite material Substances 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 7
- 230000000717 retained effect Effects 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 4
- 229910005889 NiSix Inorganic materials 0.000 claims description 3
- 229910008486 TiSix Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 238000009413 insulation Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 126
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000005036 potential barrier Methods 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003032 molecular docking Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
- H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (11)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201410102567.XA CN103956388B (zh) | 2014-03-19 | 2014-03-19 | 肖特基二极管半导体器件及其制备方法 |
Applications Claiming Priority (1)
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CN201410102567.XA CN103956388B (zh) | 2014-03-19 | 2014-03-19 | 肖特基二极管半导体器件及其制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN103956388A true CN103956388A (zh) | 2014-07-30 |
CN103956388B CN103956388B (zh) | 2017-06-13 |
Family
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Family Applications (1)
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CN201410102567.XA Active CN103956388B (zh) | 2014-03-19 | 2014-03-19 | 肖特基二极管半导体器件及其制备方法 |
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CN (1) | CN103956388B (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105789329A (zh) * | 2014-12-16 | 2016-07-20 | 中航(重庆)微电子有限公司 | 优化结构的空腔型沟槽肖特基功率器件及其制造方法 |
CN108091682A (zh) * | 2017-11-21 | 2018-05-29 | 重庆大学 | 一种高可靠性肖特基接触超级势垒整流器 |
CN108321211A (zh) * | 2017-01-16 | 2018-07-24 | 中芯国际集成电路制造(上海)有限公司 | Tmbs半导体器件及其制作方法、电子装置 |
JP2021093385A (ja) * | 2019-12-06 | 2021-06-17 | 株式会社豊田中央研究所 | ダイオード |
JP2021120989A (ja) * | 2020-01-30 | 2021-08-19 | 株式会社豊田中央研究所 | ダイオード |
JP2022049998A (ja) * | 2020-09-17 | 2022-03-30 | 株式会社東芝 | 半導体装置 |
CN116013920A (zh) * | 2022-12-08 | 2023-04-25 | 上海功成半导体科技有限公司 | 半导体器件、半导体器件的制作方法及电子设备 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100267209A1 (en) * | 2006-08-29 | 2010-10-21 | Mitsubishi Electric Corporation | Power semiconductor device and manufacturing method therefor |
CN102694009A (zh) * | 2011-03-23 | 2012-09-26 | 株式会社东芝 | 半导体器件及其制造方法 |
CN103022098A (zh) * | 2011-09-21 | 2013-04-03 | 株式会社东芝 | 半导体器件 |
-
2014
- 2014-03-19 CN CN201410102567.XA patent/CN103956388B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100267209A1 (en) * | 2006-08-29 | 2010-10-21 | Mitsubishi Electric Corporation | Power semiconductor device and manufacturing method therefor |
CN102694009A (zh) * | 2011-03-23 | 2012-09-26 | 株式会社东芝 | 半导体器件及其制造方法 |
CN103022098A (zh) * | 2011-09-21 | 2013-04-03 | 株式会社东芝 | 半导体器件 |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105789329A (zh) * | 2014-12-16 | 2016-07-20 | 中航(重庆)微电子有限公司 | 优化结构的空腔型沟槽肖特基功率器件及其制造方法 |
CN105789329B (zh) * | 2014-12-16 | 2019-03-19 | 华润微电子(重庆)有限公司 | 优化结构的空腔型沟槽肖特基功率器件及其制造方法 |
CN108321211A (zh) * | 2017-01-16 | 2018-07-24 | 中芯国际集成电路制造(上海)有限公司 | Tmbs半导体器件及其制作方法、电子装置 |
CN108091682A (zh) * | 2017-11-21 | 2018-05-29 | 重庆大学 | 一种高可靠性肖特基接触超级势垒整流器 |
JP2021093385A (ja) * | 2019-12-06 | 2021-06-17 | 株式会社豊田中央研究所 | ダイオード |
JP7118945B2 (ja) | 2019-12-06 | 2022-08-16 | 株式会社豊田中央研究所 | ダイオード |
JP2021120989A (ja) * | 2020-01-30 | 2021-08-19 | 株式会社豊田中央研究所 | ダイオード |
JP7479157B2 (ja) | 2020-01-30 | 2024-05-08 | 株式会社豊田中央研究所 | ダイオード |
JP2022049998A (ja) * | 2020-09-17 | 2022-03-30 | 株式会社東芝 | 半導体装置 |
JP7456902B2 (ja) | 2020-09-17 | 2024-03-27 | 株式会社東芝 | 半導体装置 |
CN116013920A (zh) * | 2022-12-08 | 2023-04-25 | 上海功成半导体科技有限公司 | 半导体器件、半导体器件的制作方法及电子设备 |
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Publication number | Publication date |
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CN103956388B (zh) | 2017-06-13 |
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: 400 000 4th Floor, 367 Xiyong Road, Xiyong Town, Shapingba District, Chongqing Patentee after: Huarun Microelectronics (Chongqing) Co., Ltd. Address before: 400 000 4th Floor, 367 Xiyong Road, Xiyong Town, Shapingba District, Chongqing Patentee before: China Aviation (Chongqing) Microelectronics Co., Ltd. |
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CP02 | Change in the address of a patent holder | ||
CP02 | Change in the address of a patent holder |
Address after: 401331 No. 25 Xiyong Avenue, Shapingba District, Chongqing Patentee after: Huarun Microelectronics (Chongqing) Co., Ltd. Address before: 400 000 4th Floor, 367 Xiyong Road, Xiyong Town, Shapingba District, Chongqing Patentee before: Huarun Microelectronics (Chongqing) Co., Ltd. |