CN103928280B - 离子注入装置和离子注入装置的运转方法 - Google Patents

离子注入装置和离子注入装置的运转方法 Download PDF

Info

Publication number
CN103928280B
CN103928280B CN201310353859.6A CN201310353859A CN103928280B CN 103928280 B CN103928280 B CN 103928280B CN 201310353859 A CN201310353859 A CN 201310353859A CN 103928280 B CN103928280 B CN 103928280B
Authority
CN
China
Prior art keywords
ion
ion implantation
ion beam
ion source
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201310353859.6A
Other languages
English (en)
Chinese (zh)
Other versions
CN103928280A (zh
Inventor
松本武
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NINSSIN ION EQUIPMENT CO Ltd
Original Assignee
NINSSIN ION EQUIPMENT CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NINSSIN ION EQUIPMENT CO Ltd filed Critical NINSSIN ION EQUIPMENT CO Ltd
Publication of CN103928280A publication Critical patent/CN103928280A/zh
Application granted granted Critical
Publication of CN103928280B publication Critical patent/CN103928280B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
CN201310353859.6A 2013-01-16 2013-08-14 离子注入装置和离子注入装置的运转方法 Expired - Fee Related CN103928280B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-005803 2013-01-16
JP2013005803A JP2014137901A (ja) 2013-01-16 2013-01-16 イオン注入装置およびイオン注入装置の運転方法

Publications (2)

Publication Number Publication Date
CN103928280A CN103928280A (zh) 2014-07-16
CN103928280B true CN103928280B (zh) 2016-04-20

Family

ID=51146462

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310353859.6A Expired - Fee Related CN103928280B (zh) 2013-01-16 2013-08-14 离子注入装置和离子注入装置的运转方法

Country Status (4)

Country Link
US (1) US20140199492A1 (enExample)
JP (1) JP2014137901A (enExample)
KR (1) KR101453263B1 (enExample)
CN (1) CN103928280B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105869976B (zh) * 2016-03-31 2018-03-23 信利（惠州）智能显示有限公司 离子注入装置的运转方法及清洗方法
CN106783497B (zh) * 2016-12-22 2018-07-17 信利（惠州）智能显示有限公司 一种离子注入设备的运转方法
US10580632B2 (en) * 2017-12-18 2020-03-03 Agilent Technologies, Inc. In-situ conditioning in mass spectrometry systems
JP6837088B2 (ja) * 2019-02-14 2021-03-03 日本電子株式会社 イオンビーム電流測定装置、試料作成装置及びイオンビーム電流算出方法

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01294342A (ja) * 1988-05-21 1989-11-28 Teru Barian Kk イオン注入装置
JPH0776773A (ja) * 1993-09-09 1995-03-20 Nissin Electric Co Ltd イオン注入装置の運転方法
CN1147144A (zh) * 1995-07-17 1997-04-09 易通公司 原位除去离子束注入机内表面的污物
CN1243330A (zh) * 1998-03-27 2000-02-02 易通公司 用来在过程中使离子源清洁的系统和方法
JP3399447B2 (ja) * 2000-06-09 2003-04-21 日新電機株式会社 イオン源の運転方法
CN2617031Y (zh) * 2003-03-20 2004-05-19 统宝光电股份有限公司 自行清洁离子注入系统腔体的装置
CN1977351A (zh) * 2004-05-20 2007-06-06 瓦里安半导体设备联合公司 等离子体离子注入系统的原位处理室制备方法
WO2007127865A2 (en) * 2006-04-26 2007-11-08 Advanced Technology Materials, Inc. Cleaning of semiconductor processing systems
CN101120428A (zh) * 2005-02-24 2008-02-06 株式会社爱发科 离子注入装置的控制方法、控制系统、控制程序及离子注入装置
CN101437629A (zh) * 2004-10-26 2009-05-20 高级技术材料公司 用于清洗离子注入机元件的新方法
CN102549705A (zh) * 2009-10-01 2012-07-04 普莱克斯技术有限公司 用于离子源组件清洗的方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5497006A (en) * 1994-11-15 1996-03-05 Eaton Corporation Ion generating source for use in an ion implanter
JP3265969B2 (ja) * 1995-07-07 2002-03-18 日新電機株式会社 イオン注入制御装置
US6777696B1 (en) * 2003-02-21 2004-08-17 Axcelis Technologies, Inc. Deflecting acceleration/deceleration gap
WO2005059942A2 (en) * 2003-12-12 2005-06-30 Semequip, Inc. Method and apparatus for extending equipment uptime in ion implantation
US6909102B1 (en) * 2004-01-21 2005-06-21 Varian Semiconductor Equipment Associates, Inc. Ion implanter system, method and program product including particle detection

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01294342A (ja) * 1988-05-21 1989-11-28 Teru Barian Kk イオン注入装置
JPH0776773A (ja) * 1993-09-09 1995-03-20 Nissin Electric Co Ltd イオン注入装置の運転方法
CN1147144A (zh) * 1995-07-17 1997-04-09 易通公司 原位除去离子束注入机内表面的污物
CN1243330A (zh) * 1998-03-27 2000-02-02 易通公司 用来在过程中使离子源清洁的系统和方法
JP3399447B2 (ja) * 2000-06-09 2003-04-21 日新電機株式会社 イオン源の運転方法
CN2617031Y (zh) * 2003-03-20 2004-05-19 统宝光电股份有限公司 自行清洁离子注入系统腔体的装置
CN1977351A (zh) * 2004-05-20 2007-06-06 瓦里安半导体设备联合公司 等离子体离子注入系统的原位处理室制备方法
CN101437629A (zh) * 2004-10-26 2009-05-20 高级技术材料公司 用于清洗离子注入机元件的新方法
CN101120428A (zh) * 2005-02-24 2008-02-06 株式会社爱发科 离子注入装置的控制方法、控制系统、控制程序及离子注入装置
WO2007127865A2 (en) * 2006-04-26 2007-11-08 Advanced Technology Materials, Inc. Cleaning of semiconductor processing systems
CN101473073A (zh) * 2006-04-26 2009-07-01 高级技术材料公司 半导体加工系统的清洁
CN102549705A (zh) * 2009-10-01 2012-07-04 普莱克斯技术有限公司 用于离子源组件清洗的方法

Also Published As

Publication number Publication date
KR20140092741A (ko) 2014-07-24
CN103928280A (zh) 2014-07-16
KR101453263B1 (ko) 2014-10-22
US20140199492A1 (en) 2014-07-17
JP2014137901A (ja) 2014-07-28

Similar Documents

Publication Publication Date Title
CN105990076B (zh) 离子束装置、离子注入装置、离子束放出方法
CN105474349B (zh) 离子注入系统中引出电极组件的电压调制
JP5652582B2 (ja) ハイブリッドイオン源
JP6584927B2 (ja) イオン注入装置、およびイオン注入装置の制御方法
JP2011523764A (ja) 水素化ホウ素を半導体ウェハに注入する場合の該半導体ウェハにおける粒子の制御
US8883620B1 (en) Methods for using isotopically enriched levels of dopant gas compositions in an ion implantation process
JP2013511128A (ja) 残留物を清浄する方法および装置
JP2016524277A5 (enExample)
CN103928280B (zh) 离子注入装置和离子注入装置的运转方法
CN103515172B (zh) 离子束照射装置和离子束照射装置的运转方法
US20070007243A1 (en) Ion beam etching method and ion beam etching apparatus
US20030080301A1 (en) Ion implantation systems and methods utilizing a downstream gas source
JP5672297B2 (ja) イオンビーム照射装置およびイオンビーム照射装置の運転方法
JP2956412B2 (ja) イオン源のクリーニング方法
TW202013438A (zh) 負離子照射裝置及負離子照射裝置的控制方法
JP2019119921A (ja) 帯電物体の位置決め方法と除電装置
US9105451B2 (en) Plasma processing method and plasma processing apparatus
KR102478688B1 (ko) 이온빔 조사 장치의 클리닝 방법
CN115458381B (zh) 离子注入机电流剂量计挡板的清洁方法
JP2013187017A (ja) 半導体装置の製造装置および製造方法
CN119008385A (zh) 改善离子注入机离子污染的方法
JP2014120347A (ja) イオンビーム照射装置およびイオンビーム照射装置の運転方法
JP5906505B2 (ja) 圧電素子の周波数測定方法及び周波数調整方法並びに圧電素子の製造方法
JP2008152941A (ja) イオン発生装置
JP2014143110A (ja) イオン注入装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20160420