KR101453263B1 - 이온주입장치 및 이온주입장치의 운전 방법 - Google Patents

이온주입장치 및 이온주입장치의 운전 방법 Download PDF

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Publication number
KR101453263B1
KR101453263B1 KR1020130126643A KR20130126643A KR101453263B1 KR 101453263 B1 KR101453263 B1 KR 101453263B1 KR 1020130126643 A KR1020130126643 A KR 1020130126643A KR 20130126643 A KR20130126643 A KR 20130126643A KR 101453263 B1 KR101453263 B1 KR 101453263B1
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KR
South Korea
Prior art keywords
ion
ion beam
ion source
electrode system
source
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020130126643A
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English (en)
Korean (ko)
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KR20140092741A (ko
Inventor
타케시 마츠모토
Original Assignee
닛신 이온기기 가부시기가이샤
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Publication of KR20140092741A publication Critical patent/KR20140092741A/ko
Application granted granted Critical
Publication of KR101453263B1 publication Critical patent/KR101453263B1/ko
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
KR1020130126643A 2013-01-16 2013-10-23 이온주입장치 및 이온주입장치의 운전 방법 Expired - Fee Related KR101453263B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2013-005803 2013-01-16
JP2013005803A JP2014137901A (ja) 2013-01-16 2013-01-16 イオン注入装置およびイオン注入装置の運転方法

Publications (2)

Publication Number Publication Date
KR20140092741A KR20140092741A (ko) 2014-07-24
KR101453263B1 true KR101453263B1 (ko) 2014-10-22

Family

ID=51146462

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130126643A Expired - Fee Related KR101453263B1 (ko) 2013-01-16 2013-10-23 이온주입장치 및 이온주입장치의 운전 방법

Country Status (4)

Country Link
US (1) US20140199492A1 (enExample)
JP (1) JP2014137901A (enExample)
KR (1) KR101453263B1 (enExample)
CN (1) CN103928280B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105869976B (zh) * 2016-03-31 2018-03-23 信利（惠州）智能显示有限公司 离子注入装置的运转方法及清洗方法
CN106783497B (zh) * 2016-12-22 2018-07-17 信利（惠州）智能显示有限公司 一种离子注入设备的运转方法
US10580632B2 (en) * 2017-12-18 2020-03-03 Agilent Technologies, Inc. In-situ conditioning in mass spectrometry systems
JP6837088B2 (ja) * 2019-02-14 2021-03-03 日本電子株式会社 イオンビーム電流測定装置、試料作成装置及びイオンビーム電流算出方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0982266A (ja) * 1995-07-07 1997-03-28 Nissin Electric Co Ltd イオン注入制御装置
JP2001351536A (ja) * 2000-06-09 2001-12-21 Nissin Electric Co Ltd イオン源の運転方法
KR20070000086A (ko) * 2005-06-27 2007-01-02 삼성전자주식회사 이온주입설비의 이온발생장치

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2711246B2 (ja) * 1988-05-21 1998-02-10 東京エレクトロン株式会社 イオン注入装置
JPH0776773A (ja) * 1993-09-09 1995-03-20 Nissin Electric Co Ltd イオン注入装置の運転方法
US5497006A (en) * 1994-11-15 1996-03-05 Eaton Corporation Ion generating source for use in an ion implanter
US5554854A (en) * 1995-07-17 1996-09-10 Eaton Corporation In situ removal of contaminants from the interior surfaces of an ion beam implanter
US6135128A (en) * 1998-03-27 2000-10-24 Eaton Corporation Method for in-process cleaning of an ion source
US6777696B1 (en) * 2003-02-21 2004-08-17 Axcelis Technologies, Inc. Deflecting acceleration/deceleration gap
CN2617031Y (zh) * 2003-03-20 2004-05-19 统宝光电股份有限公司 自行清洁离子注入系统腔体的装置
WO2005059942A2 (en) * 2003-12-12 2005-06-30 Semequip, Inc. Method and apparatus for extending equipment uptime in ion implantation
US6909102B1 (en) * 2004-01-21 2005-06-21 Varian Semiconductor Equipment Associates, Inc. Ion implanter system, method and program product including particle detection
US20050260354A1 (en) * 2004-05-20 2005-11-24 Varian Semiconductor Equipment Associates, Inc. In-situ process chamber preparation methods for plasma ion implantation systems
US7819981B2 (en) * 2004-10-26 2010-10-26 Advanced Technology Materials, Inc. Methods for cleaning ion implanter components
US7777206B2 (en) * 2005-02-24 2010-08-17 Ulvac, Inc. Ion implantation device control method, control system thereof, control program thereof, and ion implantation device
US8603252B2 (en) * 2006-04-26 2013-12-10 Advanced Technology Materials, Inc. Cleaning of semiconductor processing systems
US9627180B2 (en) * 2009-10-01 2017-04-18 Praxair Technology, Inc. Method for ion source component cleaning

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0982266A (ja) * 1995-07-07 1997-03-28 Nissin Electric Co Ltd イオン注入制御装置
JP2001351536A (ja) * 2000-06-09 2001-12-21 Nissin Electric Co Ltd イオン源の運転方法
KR20070000086A (ko) * 2005-06-27 2007-01-02 삼성전자주식회사 이온주입설비의 이온발생장치

Also Published As

Publication number Publication date
CN103928280B (zh) 2016-04-20
KR20140092741A (ko) 2014-07-24
CN103928280A (zh) 2014-07-16
US20140199492A1 (en) 2014-07-17
JP2014137901A (ja) 2014-07-28

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