JP2014137901A - イオン注入装置およびイオン注入装置の運転方法 - Google Patents

イオン注入装置およびイオン注入装置の運転方法 Download PDF

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Publication number
JP2014137901A
JP2014137901A JP2013005803A JP2013005803A JP2014137901A JP 2014137901 A JP2014137901 A JP 2014137901A JP 2013005803 A JP2013005803 A JP 2013005803A JP 2013005803 A JP2013005803 A JP 2013005803A JP 2014137901 A JP2014137901 A JP 2014137901A
Authority
JP
Japan
Prior art keywords
ion
ion beam
extraction electrode
substrate
ion implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2013005803A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014137901A5 (enExample
Inventor
Takeshi Matsumoto
武 松本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissin Ion Equipment Co Ltd
Original Assignee
Nissin Ion Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissin Ion Equipment Co Ltd filed Critical Nissin Ion Equipment Co Ltd
Priority to JP2013005803A priority Critical patent/JP2014137901A/ja
Priority to CN201310353859.6A priority patent/CN103928280B/zh
Priority to KR1020130126643A priority patent/KR101453263B1/ko
Priority to US14/063,373 priority patent/US20140199492A1/en
Publication of JP2014137901A publication Critical patent/JP2014137901A/ja
Publication of JP2014137901A5 publication Critical patent/JP2014137901A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
JP2013005803A 2013-01-16 2013-01-16 イオン注入装置およびイオン注入装置の運転方法 Pending JP2014137901A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2013005803A JP2014137901A (ja) 2013-01-16 2013-01-16 イオン注入装置およびイオン注入装置の運転方法
CN201310353859.6A CN103928280B (zh) 2013-01-16 2013-08-14 离子注入装置和离子注入装置的运转方法
KR1020130126643A KR101453263B1 (ko) 2013-01-16 2013-10-23 이온주입장치 및 이온주입장치의 운전 방법
US14/063,373 US20140199492A1 (en) 2013-01-16 2013-10-25 Ion implanter and method of operating ion implanter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013005803A JP2014137901A (ja) 2013-01-16 2013-01-16 イオン注入装置およびイオン注入装置の運転方法

Publications (2)

Publication Number Publication Date
JP2014137901A true JP2014137901A (ja) 2014-07-28
JP2014137901A5 JP2014137901A5 (enExample) 2014-09-18

Family

ID=51146462

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013005803A Pending JP2014137901A (ja) 2013-01-16 2013-01-16 イオン注入装置およびイオン注入装置の運転方法

Country Status (4)

Country Link
US (1) US20140199492A1 (enExample)
JP (1) JP2014137901A (enExample)
KR (1) KR101453263B1 (enExample)
CN (1) CN103928280B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105869976B (zh) * 2016-03-31 2018-03-23 信利（惠州）智能显示有限公司 离子注入装置的运转方法及清洗方法
CN106783497B (zh) * 2016-12-22 2018-07-17 信利（惠州）智能显示有限公司 一种离子注入设备的运转方法
US10580632B2 (en) * 2017-12-18 2020-03-03 Agilent Technologies, Inc. In-situ conditioning in mass spectrometry systems
JP6837088B2 (ja) * 2019-02-14 2021-03-03 日本電子株式会社 イオンビーム電流測定装置、試料作成装置及びイオンビーム電流算出方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2711246B2 (ja) * 1988-05-21 1998-02-10 東京エレクトロン株式会社 イオン注入装置
JPH0776773A (ja) * 1993-09-09 1995-03-20 Nissin Electric Co Ltd イオン注入装置の運転方法
US5497006A (en) * 1994-11-15 1996-03-05 Eaton Corporation Ion generating source for use in an ion implanter
JP3265969B2 (ja) * 1995-07-07 2002-03-18 日新電機株式会社 イオン注入制御装置
US5554854A (en) * 1995-07-17 1996-09-10 Eaton Corporation In situ removal of contaminants from the interior surfaces of an ion beam implanter
US6135128A (en) * 1998-03-27 2000-10-24 Eaton Corporation Method for in-process cleaning of an ion source
JP3399447B2 (ja) * 2000-06-09 2003-04-21 日新電機株式会社 イオン源の運転方法
US6777696B1 (en) * 2003-02-21 2004-08-17 Axcelis Technologies, Inc. Deflecting acceleration/deceleration gap
CN2617031Y (zh) * 2003-03-20 2004-05-19 统宝光电股份有限公司 自行清洁离子注入系统腔体的装置
WO2005059942A2 (en) * 2003-12-12 2005-06-30 Semequip, Inc. Method and apparatus for extending equipment uptime in ion implantation
US6909102B1 (en) * 2004-01-21 2005-06-21 Varian Semiconductor Equipment Associates, Inc. Ion implanter system, method and program product including particle detection
US20050260354A1 (en) * 2004-05-20 2005-11-24 Varian Semiconductor Equipment Associates, Inc. In-situ process chamber preparation methods for plasma ion implantation systems
US7819981B2 (en) * 2004-10-26 2010-10-26 Advanced Technology Materials, Inc. Methods for cleaning ion implanter components
US7777206B2 (en) * 2005-02-24 2010-08-17 Ulvac, Inc. Ion implantation device control method, control system thereof, control program thereof, and ion implantation device
US8603252B2 (en) * 2006-04-26 2013-12-10 Advanced Technology Materials, Inc. Cleaning of semiconductor processing systems
US9627180B2 (en) * 2009-10-01 2017-04-18 Praxair Technology, Inc. Method for ion source component cleaning

Also Published As

Publication number Publication date
CN103928280B (zh) 2016-04-20
KR20140092741A (ko) 2014-07-24
CN103928280A (zh) 2014-07-16
KR101453263B1 (ko) 2014-10-22
US20140199492A1 (en) 2014-07-17

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