JP2014137901A5 - - Google Patents

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Publication number
JP2014137901A5
JP2014137901A5 JP2013005803A JP2013005803A JP2014137901A5 JP 2014137901 A5 JP2014137901 A5 JP 2014137901A5 JP 2013005803 A JP2013005803 A JP 2013005803A JP 2013005803 A JP2013005803 A JP 2013005803A JP 2014137901 A5 JP2014137901 A5 JP 2014137901A5
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JP
Japan
Prior art keywords
ion
ion source
substrate
extraction electrode
electrode system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2013005803A
Other languages
English (en)
Japanese (ja)
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JP2014137901A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2013005803A priority Critical patent/JP2014137901A/ja
Priority claimed from JP2013005803A external-priority patent/JP2014137901A/ja
Priority to CN201310353859.6A priority patent/CN103928280B/zh
Priority to KR1020130126643A priority patent/KR101453263B1/ko
Priority to US14/063,373 priority patent/US20140199492A1/en
Publication of JP2014137901A publication Critical patent/JP2014137901A/ja
Publication of JP2014137901A5 publication Critical patent/JP2014137901A5/ja
Pending legal-status Critical Current

Links

JP2013005803A 2013-01-16 2013-01-16 イオン注入装置およびイオン注入装置の運転方法 Pending JP2014137901A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2013005803A JP2014137901A (ja) 2013-01-16 2013-01-16 イオン注入装置およびイオン注入装置の運転方法
CN201310353859.6A CN103928280B (zh) 2013-01-16 2013-08-14 离子注入装置和离子注入装置的运转方法
KR1020130126643A KR101453263B1 (ko) 2013-01-16 2013-10-23 이온주입장치 및 이온주입장치의 운전 방법
US14/063,373 US20140199492A1 (en) 2013-01-16 2013-10-25 Ion implanter and method of operating ion implanter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013005803A JP2014137901A (ja) 2013-01-16 2013-01-16 イオン注入装置およびイオン注入装置の運転方法

Publications (2)

Publication Number Publication Date
JP2014137901A JP2014137901A (ja) 2014-07-28
JP2014137901A5 true JP2014137901A5 (enExample) 2014-09-18

Family

ID=51146462

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013005803A Pending JP2014137901A (ja) 2013-01-16 2013-01-16 イオン注入装置およびイオン注入装置の運転方法

Country Status (4)

Country Link
US (1) US20140199492A1 (enExample)
JP (1) JP2014137901A (enExample)
KR (1) KR101453263B1 (enExample)
CN (1) CN103928280B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105869976B (zh) * 2016-03-31 2018-03-23 信利（惠州）智能显示有限公司 离子注入装置的运转方法及清洗方法
CN106783497B (zh) * 2016-12-22 2018-07-17 信利（惠州）智能显示有限公司 一种离子注入设备的运转方法
US10580632B2 (en) * 2017-12-18 2020-03-03 Agilent Technologies, Inc. In-situ conditioning in mass spectrometry systems
JP6837088B2 (ja) * 2019-02-14 2021-03-03 日本電子株式会社 イオンビーム電流測定装置、試料作成装置及びイオンビーム電流算出方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2711246B2 (ja) * 1988-05-21 1998-02-10 東京エレクトロン株式会社 イオン注入装置
JPH0776773A (ja) * 1993-09-09 1995-03-20 Nissin Electric Co Ltd イオン注入装置の運転方法
US5497006A (en) * 1994-11-15 1996-03-05 Eaton Corporation Ion generating source for use in an ion implanter
JP3265969B2 (ja) * 1995-07-07 2002-03-18 日新電機株式会社 イオン注入制御装置
US5554854A (en) * 1995-07-17 1996-09-10 Eaton Corporation In situ removal of contaminants from the interior surfaces of an ion beam implanter
US6135128A (en) * 1998-03-27 2000-10-24 Eaton Corporation Method for in-process cleaning of an ion source
JP3399447B2 (ja) * 2000-06-09 2003-04-21 日新電機株式会社 イオン源の運転方法
US6777696B1 (en) * 2003-02-21 2004-08-17 Axcelis Technologies, Inc. Deflecting acceleration/deceleration gap
CN2617031Y (zh) * 2003-03-20 2004-05-19 统宝光电股份有限公司 自行清洁离子注入系统腔体的装置
KR101160642B1 (ko) * 2003-12-12 2012-06-28 세미이큅, 인코포레이티드 고체로부터 승화된 증기의 유동제어
US6909102B1 (en) * 2004-01-21 2005-06-21 Varian Semiconductor Equipment Associates, Inc. Ion implanter system, method and program product including particle detection
US20050260354A1 (en) * 2004-05-20 2005-11-24 Varian Semiconductor Equipment Associates, Inc. In-situ process chamber preparation methods for plasma ion implantation systems
US7819981B2 (en) * 2004-10-26 2010-10-26 Advanced Technology Materials, Inc. Methods for cleaning ion implanter components
CN100593836C (zh) * 2005-02-24 2010-03-10 株式会社爱发科 离子注入装置的控制方法、控制系统、控制程序及离子注入装置
KR20070000086A (ko) * 2005-06-27 2007-01-02 삼성전자주식회사 이온주입설비의 이온발생장치
EP2021528A4 (en) * 2006-04-26 2011-03-23 Advanced Tech Materials Cleaning of semiconductor processing systems
US9627180B2 (en) * 2009-10-01 2017-04-18 Praxair Technology, Inc. Method for ion source component cleaning

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