CN103887155A - Method for reinforcing movement radiation resistance of bipolar device based on base region ion injection mode - Google Patents
Method for reinforcing movement radiation resistance of bipolar device based on base region ion injection mode Download PDFInfo
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- 230000005855 radiation Effects 0.000 title claims abstract description 52
- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000002347 injection Methods 0.000 title claims abstract description 10
- 239000007924 injection Substances 0.000 title claims abstract description 10
- 230000003014 reinforcing effect Effects 0.000 title abstract description 4
- 150000002500 ions Chemical class 0.000 claims abstract description 50
- 238000000137 annealing Methods 0.000 claims abstract description 11
- 238000002513 implantation Methods 0.000 claims description 46
- 238000006073 displacement reaction Methods 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 4
- -1 oxonium ion Chemical class 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 230000002787 reinforcement Effects 0.000 abstract 1
- 230000007547 defect Effects 0.000 description 10
- 239000002245 particle Substances 0.000 description 6
- 230000000191 radiation effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000001235 sensitizing effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000003471 anti-radiation Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
The invention provides a method for reinforcing movement radiation resistance of a bipolar device based on a base region ion injection mode and belongs to the technical field of electronics. The requirements for a bipolar device which is small in damage on movement radiation and high in radiation resistant capacity are satisfied. Structural parameters of the bipolar device are utilized and SRIM software is used for simulating the energy and the range information of ions injected into the bipolar device; TCAD software is used for simulating the current gain variation of the bipolar device and changing the ion injection volume of the bipolar device, the current gain variable quantity, simulated by the TCAD software, of the bipolar device is made to be smaller than 10 percent of the current gain of the bipolar device when the ions are not injected, and the ion injection volume is recorded; according to the energy, the range information and the injection volume of the ions injected into the bipolar device, and the voltage, the current and the injection time of an ion injection machine are set; finally, the annealing treatment is conducted, so that reinforcement of movement radiation resistance of the bipolar device is achieved. The method is suitable for reinforcing the movement radiation resistance of the bipolar device.
Description
Technical field
The invention belongs to electronic technology field.
Background technology
Electronics in space radiation environment and proton have strong impact on spacecraft by the performance of electronic device; can cause ionization radiation effect, displacement radiation effect and single particle effect etc.; cause the abnormal or malfunctioning of electronic device, even finally cause spacecraft that catastrophic accident occurs.Therefore, improve the Radiation hardness of bipolar device, for optimizing the selection of spacecraft and the service reliability in-orbit of design and raising spacecraft, there is very important practical meaning in engineering.
In the irradiation effect of space on bipolar transistor impact more serious be displacement radiation damage.Incoming particle and target atom interact, and cause target atom lattice-site battle array to change (part) and produce displacement radiation effect.In the time of incoming particle and target atom generation reciprocation, can in target, produce the body damages such as room, interstitial atom and related defects.The interstitial atom that displacement radiation effect produces in semi-conducting material and vacancy defect are the direct results of displacement damage.Can again there is reciprocation in these interstitial atoms and room, form more complicated defect, in semi-conducting material inside, especially in base, produce trap or complex centre, thereby the minority carrier life time in minimizing semi-conducting material, causes the degeneration of device electricity or optical property.Base is the sensitizing range of displacement radiation damage, is also that silicon-based devices improves the region that resist displacement radiation damage ability needs emphasis to be concerned about.Take bipolar process in main integrated circuit, the importance that produces displacement radiation damage degree just more outstanding the base in.
Displacement radiation effect can directly affect the potential field of lattice of the Si body material of bipolar transistor, thereby causes the decline of device electrical performance.The displacement damage effect that charged particle causes bipolar device is in Si body, to produce interstitial atom and room.The interstitial atom forming and room are dynamic changes, can in Si body, move, compound and produce stable defect.Although related physical process more complicated, final result is to form complex centre, causes minority carrier lifetime in semiconductor to reduce, thereby causes reducing of current gain.The fluence of charged particle irradiation is larger, and the complex centre quantity forming in Si body is more.The research work in our early stage is found, mode by Implantation in the base of device is introduced defect trap artificially, make the displacement radiation defect of inside, base keep stable, not because of the increase significant change of radiation fluence, thereby improve the Radiation hardness of bipolar device.
Therefore be badly in need of the technology that a kind of displacement radiation damage is little, improve bipolar device Radiation hardness.
Summary of the invention
The present invention is demand little to displacement radiation damage in order to adapt to, bipolar device that bipolar device Radiation hardness is strong, has proposed a kind of bipolar device resist displacement Radiation Hardened method based on base Implantation mode.
A kind of bipolar device resist displacement Radiation Hardened method based on base Implantation mode of the present invention, the concrete steps of the method are:
The structural parameters of described polar form device are material composition, density and thickness;
The current gain of step 2, employing TCAD software simulation bipolar device changes, change the Implantation amount of bipolar device, make the current gain variable quantity of TCAD software simulation bipolar device be less than 10% of bipolar device current gain while not injecting ion, record Implantation amount;
Step 3, the energy of ion of simulating the injection bipolar device obtaining according to step 1 and the Implantation amount of range information and step 2 acquisition, voltage, electric current and the Implantation time of calculating ion implantor;
Voltage, electric current and the method for Implantation time of described calculating ion implantor are:
Adopt formula:
Calculate the voltage V that obtains ion implantor, in formula, the unit of voltage is volt V; E is ion energy, and unit is eV;
C is ion band electric weight;
Adopt formula:
Calculate and obtain the electric current I of ion implantor, in formula, Φ is ion fluence, and C is ion band electric weight, and q is unit charge, and t is exposure time, i.e. ion implantor running time;
Step 4, voltage, electric current and the Implantation time of ion implantor obtaining according to step 3, arrange ion implantor, and bipolar device is carried out to Implantation;
Step 5, the bipolar device completing after Implantation is carried out to annealing in process, after annealing in process, complete the bipolar device resist displacement Radiation Hardened based on base Implantation mode.
The present invention is by the mode of base Implantation, introduce artificially defect trap, make the displacement radiation defect of inside, base reach certain degree of saturation, and keep stable, not because of the increase significant change of radiation fluence, thereby improve the Radiation hardness of bipolar device.And Radiation hardness improves about 3-5 doubly compared with the bipolar device of processing for employing method of the present invention.
Accompanying drawing explanation
Fig. 1 is method flow diagram of the present invention;
Fig. 2 is base Implantation schematic diagram;
Fig. 3 is the bipolar device Radiation hardness contrast schematic diagram that has or not base Implantation mode after irradiation damage.
Embodiment
Embodiment one, referring to Fig. 1, Fig. 2, a kind of bipolar device resist displacement Radiation Hardened method based on base Implantation mode described in present embodiment, present embodiment is described, the concrete steps of the method are:
The structural parameters of described polar form device are material composition, density and thickness;
The current gain of step 2, employing TCAD software simulation bipolar device changes, change the Implantation amount of bipolar device, make the current gain variable quantity of TCAD software simulation bipolar device be less than 10% of bipolar device current gain while not injecting ion, record Implantation amount;
Step 3, the energy of ion of simulating the injection bipolar device obtaining according to step 1 and the Implantation amount of range information and step 2 acquisition, voltage, electric current and the Implantation time of calculating ion implantor;
Voltage, electric current and the method for Implantation time of described calculating ion implantor are:
Adopt formula:
Calculate the voltage V that obtains ion implantor, in formula, the unit of voltage is volt V; E is ion energy, and unit is eV; C is ion band electric weight;
Adopt formula:
Calculate the electric current I that obtains ion implantor, in formula, Φ is ion fluence, and C is ion band electric weight, and q is unit charge, and t is exposure time, i.e. the Implantation time;
Step 4, voltage, electric current and the Implantation time of ion implantor obtaining according to step 3, arrange ion implantor, and bipolar device is carried out to Implantation;
Step 5, the bipolar device completing after Implantation is carried out to annealing in process, after annealing in process, complete the bipolar device resist displacement Radiation Hardened based on base Implantation mode.
Space charged particle can produce multiple radiation damage at device inside, wherein displacement radiation damage most serious of all.Displacement radiation damage meeting produces the defect such as room, interstitial atom at device inside, thereby seriously affects the performance parameter of device.Base is the sensitizing range of bipolar device displacement radiation damage, the serious impact that is subject to displacement radiation damage.The present invention adopts the mode of base Implantation to effectively raise the Radiation hardness of bipolar device.
Embodiment two, present embodiment are that the ion described in step 1 is oxonium ion or carbon ion to the further illustrating of a kind of bipolar device resist displacement Radiation Hardened method based on base Implantation mode described in embodiment one.
Embodiment three, execution mode are further illustrating a kind of bipolar device resist displacement Radiation Hardened method based on base Implantation mode described in embodiment one, annealing temperature described in step 5 is 400 ℃-1100 ℃, and annealing time is 0.5 minute to 1 minute.
Adopt the method for the invention to carry out resist displacement Radiation Hardened to bipolar device, and the device after reinforcing and the bipolar device that does not carry out resist displacement Radiation Hardened are carried out to irradiation contrast simultaneously, as shown in Figure 3, the Radiation hardness of bipolar device contrast schematic diagram.C ion irradiation source is selected in this experiment, and dose rate is 1rad/s, and accumulated dose is 100krad, using current gain variable quantity as-60 as failure criteria.As seen from the figure, compared with not adding the bipolar transistor of radiation hardened, the transistor resist displacement irradiation ability after the method for the invention is reinforced improves approximately 3.5 times.Bipolar device resist displacement Radiation Hardened method based on base Implantation mode, can reduce the impact of displacement radiation defect on device performance greatly, improves the Radiation hardness of bipolar device.
The present invention adopts existing SRIM software and TCAD software, and bipolar device is carried out to emulation, has effectively shortened parameter and has really fixed time and program, can determine fast Implantation desired parameters.
Bipolar device resist displacement Radiation Hardened method based on base Implantation mode of the present invention both can be used for existing bipolar device to carry out radiation hardened, also can in the production process of bipolar device, carry out, directly produce the bipolar device with resist displacement irradiation behaviour, optimized the anti-radiation performance of bipolar device, the present invention is an important resist displacement Radiation Hardened technology.
Claims (3)
1. the bipolar device resist displacement Radiation Hardened method based on base Implantation mode, is characterized in that, the concrete steps of the method are:
Step 1, utilize the structural parameters of bipolar device, adopt SRIM software simulation to obtain energy and the range information of the ion that injects bipolar device;
The structural parameters of described polar form device are material composition, density and thickness;
The current gain of step 2, employing TCAD software simulation bipolar device changes, change the Implantation amount of bipolar device, make the current gain variable quantity of TCAD software simulation bipolar device be less than 10% of bipolar device current gain while not injecting ion, record Implantation amount;
Step 3, the energy of ion of simulating the injection bipolar device obtaining according to step 1 and the Implantation amount of range information and step 2 acquisition, voltage, electric current and the Implantation time of calculating ion implantor;
Voltage, electric current and the method for Implantation time of described calculating ion implantor are:
Adopt formula:
Calculate the voltage V that obtains ion implantor, in formula, the unit of voltage is volt; E is ion energy, and unit is eV; C is ion band electric weight;
Adopt formula:
Calculate the electric current I that obtains ion implantor, in formula, Φ is ion fluence, and C is ion band electric weight, and q is unit charge, and t is exposure time, i.e. the Implantation time;
Step 4, voltage, electric current and the Implantation time of ion implantor obtaining according to step 3, arrange ion implantor, and bipolar device is carried out to Implantation;
Step 5, the bipolar device completing after Implantation is carried out to annealing in process, after annealing in process, complete the bipolar device resist displacement Radiation Hardened based on base Implantation mode.
2. a kind of bipolar device resist displacement Radiation Hardened method based on base Implantation mode according to claim 1, is characterized in that, the ion described in step 1 is oxonium ion or carbon ion.
3. a kind of bipolar device resist displacement Radiation Hardened method based on base Implantation mode according to claim 1, is characterized in that, the annealing temperature described in step 5 is 400 ℃-1100 ℃, and annealing time is 0.5 minute to 1 minute.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109860033A (en) * | 2019-02-11 | 2019-06-07 | 哈尔滨工业大学 | Schottky diode resist displacement Radiation Hardened method based on deep ion injection mode |
| CN109888025A (en) * | 2019-03-21 | 2019-06-14 | 哈尔滨工业大学 | PIN diode displacement radiation-resistant reinforcement method based on deep ion implantation mode |
| CN110459649A (en) * | 2019-08-21 | 2019-11-15 | 哈尔滨工业大学 | Single crystalline Si solar cell resist displacement irradiance method based on the injection of substrate deep ion |
| CN110459650A (en) * | 2019-08-21 | 2019-11-15 | 哈尔滨工业大学 | Inversion three-junction solar battery resist displacement Radiation Hardened method based on deep ion injection mode |
| CN110491970A (en) * | 2019-08-21 | 2019-11-22 | 哈尔滨工业大学 | Inversion four-junction solar battery resist displacement Radiation Hardened method based on deep ion injection mode |
| CN110828549A (en) * | 2019-11-14 | 2020-02-21 | 西安微电子技术研究所 | Guard ring doped anti-radiation transistor structure and preparation method thereof |
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| JPH08305042A (en) * | 1995-04-27 | 1996-11-22 | Nitto Denko Corp | Removing method of resist |
| CN102437087A (en) * | 2011-12-14 | 2012-05-02 | 中国科学院微电子研究所 | SOI structure with radiation resistance and reinforcement and manufacturing method thereof |
| CN103577643A (en) * | 2013-11-06 | 2014-02-12 | 中国空间技术研究院 | SRAM type FPGA single event upset effect simulation method |
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- 2014-04-04 CN CN201410135934.6A patent/CN103887155B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08305042A (en) * | 1995-04-27 | 1996-11-22 | Nitto Denko Corp | Removing method of resist |
| CN102437087A (en) * | 2011-12-14 | 2012-05-02 | 中国科学院微电子研究所 | SOI structure with radiation resistance and reinforcement and manufacturing method thereof |
| CN103577643A (en) * | 2013-11-06 | 2014-02-12 | 中国空间技术研究院 | SRAM type FPGA single event upset effect simulation method |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109860033A (en) * | 2019-02-11 | 2019-06-07 | 哈尔滨工业大学 | Schottky diode resist displacement Radiation Hardened method based on deep ion injection mode |
| CN109860033B (en) * | 2019-02-11 | 2021-07-20 | 哈尔滨工业大学 | Schottky diode displacement-resistant irradiation strengthening method based on deep ion implantation mode |
| CN109888025A (en) * | 2019-03-21 | 2019-06-14 | 哈尔滨工业大学 | PIN diode displacement radiation-resistant reinforcement method based on deep ion implantation mode |
| CN110459649A (en) * | 2019-08-21 | 2019-11-15 | 哈尔滨工业大学 | Single crystalline Si solar cell resist displacement irradiance method based on the injection of substrate deep ion |
| CN110459650A (en) * | 2019-08-21 | 2019-11-15 | 哈尔滨工业大学 | Inversion three-junction solar battery resist displacement Radiation Hardened method based on deep ion injection mode |
| CN110491970A (en) * | 2019-08-21 | 2019-11-22 | 哈尔滨工业大学 | Inversion four-junction solar battery resist displacement Radiation Hardened method based on deep ion injection mode |
| CN110828549A (en) * | 2019-11-14 | 2020-02-21 | 西安微电子技术研究所 | Guard ring doped anti-radiation transistor structure and preparation method thereof |
| CN110828549B (en) * | 2019-11-14 | 2022-08-16 | 西安微电子技术研究所 | Guard ring doped anti-radiation transistor structure and preparation method thereof |
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