CN109860033A - Schottky diode resist displacement Radiation Hardened method based on deep ion injection mode - Google Patents
Schottky diode resist displacement Radiation Hardened method based on deep ion injection mode Download PDFInfo
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Abstract
Schottky diode resist displacement Radiation Hardened method based on deep ion injection mode of the invention is related to the manufacture or process field of semiconductor devices, purpose is to overcome the problems, such as that Schottky diode is caused forward characteristic to be degenerated by defect caused by shifted radiation, the specific steps are ion source voltage value V, value of ion beam current I, ion implanting depth D and ion implanting time t is calculated, ion implanting is carried out to the active area of Schottky diode.The beneficial effects of the present invention are: the present invention is in such a way that deep ion injects, defect trap is artificially induced by way of ion implanting within the scope of the certain depth inside Schottky diode, compound action can be generated the defect as caused by shifted radiation, the shifted radiation defect of device inside is set to keep stablizing, not because radiating the increase of fluence due to significant change, to improve the Radiation hardness of Schottky diode.
Description
Technical field
The present invention relates to field of semiconductor devices, and in particular to using ion implanting mode to Schottky diode at
The method of reason.
Background technique
Semiconductor devices is influenced the most serious is shifted radiation damage in space radiation effect, displacement radiation effect is
Incoming particle and target atom interact, and causes target atom lattice-site battle array to change (part) and generates.Specifically,
When reciprocation occurs for incoming particle and target atom, the bodies such as vacancy, interstitial atom and related defects can be generated in target
Damage.Reciprocation can occur again for these interstitial atoms and vacancy, form increasingly complex defect.Related physical process
It is more complicated, it is final the result is that forming complex centre.
By taking Schottky diode as an example, radiation defect mainly causes the carrier of active area to be captured by radiation defect, makes
The carrier concentration for obtaining active area is greatly reduced, and the conductivity of active area reduces, to cause the degeneration of forward characteristic.
To sum up, the charged particle irradiation fluence that can generate displacement damage is bigger, in the material of Schottky diode
The complex centre quantity of interior formation is more, caused by performance degradation also just it is more serious.
Summary of the invention
The purpose of the invention is to overcome Schottky diode to be led to forward characteristic by defect caused by shifted radiation
The problem of degeneration, provides a kind of Schottky diode resist displacement Radiation Hardened method based on deep ion injection mode.
Schottky diode resist displacement Radiation Hardened method based on deep ion injection mode of the invention, specific steps
It is as follows:
Step 1: determination need to inject the ionic species of the Schottky diode according to the structural parameters of Schottky diode
Type and ion implanting depth D, and calculate ion source voltage value V；
Step 2: calculating ion implanting amount Ф, the ion implanting amount Ф meets following condition:
After injecting ion to Schottky diode according to ion implanting amount Ф, the forward and reverse of Schottky diode can be made
Characteristic variations amount is respectively smaller than 5%~15% of forward and reverse characteristic when unimplanted ion；
Step 3: determining ion implanting time t according to the ion implanting amount Ф, and calculate value of ion beam current I: its
In, ion implanting time t is more than or equal to 5min；
Step 4: when according to the ion source voltage value V, value of ion beam current I, ion implanting depth D and ion implanting
Between t, to the active area of Schottky diode inject ion.
The beneficial effects of the present invention are:
The present invention deep ion inject by way of, within the scope of the certain depth inside Schottky diode by from
The mode of son injection is artificially induced defect trap, can generate compound action the defect as caused by shifted radiation, make device
Internal shifted radiation defect keeps stablizing, not because radiating the increase of fluence due to significant change, to improve Schottky diode
Radiation hardness, and with the Schottky that is not handled using Schottky diode resist displacement Radiation Hardened method of the invention
Diode improves about 2~4 times compared to Radiation hardness.
The present invention can be not only used for carrying out radiation hardened to existing Schottky diode, can also be in Schottky diode
Production process in carry out, directly produce the Schottky diode with resist displacement irradiation behaviour, optimize two pole of Schottky
The anti-radiation performance of pipe is an important resist displacement Radiation Hardened technology.
Detailed description of the invention
Fig. 1 is the flow chart of Schottky diode resist displacement Radiation Hardened method of the invention；
Fig. 2 be in Schottky diode resist displacement Radiation Hardened method of the invention to the active area of Schottky diode into
The schematic diagram of row ion implanting；In Fig. 2, a is metal electrode, and b is active area, and arrow direction is ion implanting direction；
Fig. 3 is the Radiation hardness pair of SiC schottky diode in specific embodiment seven and specific embodiment eight
Compare schematic diagram；
In Fig. 3, abscissa is SiC schottky diode to the absorbed dose of radiation, and ordinate is silicon carbide schottky
Diode forward characteristic variations amount normalizes result；Two pole of Schottky of the invention is not used in the broken line expression that square point is connected
The SiC schottky diode Radiation hardness of pipe resist displacement Radiation Hardened method processing, the broken line expression that dot is connected make
The SiC schottky diode Radiation hardness handled with Schottky diode resist displacement Radiation Hardened method of the invention.
Specific embodiment
Specific embodiment one
The present invention uses existing SRIM software and TCAD software, carries out performance simulation to Schottky diode, effectively
It shortens parameter to fix time really and program, parameter needed for quickly capable of determining ion implanting.
Schottky diode resist displacement Radiation Hardened method based on deep ion injection mode of the invention, specific steps
It is as follows:
Step 1: according to the structural parameters of Schottky diode, determination need to inject Schottky diode ionic type and
Ion implanting depth D, and calculate ion source voltage value V (unit V)；
It needs first to calculate ion energy E in the present invention, and ion source voltage value V, the ion source is calculated by ion energy E
Selected voltage value when voltage value, that is, ion implantation apparatus is to Schottky diode progress ion implanting.
Step 2: calculating ion implanting amount Ф, ion implanting amount Ф meets following condition:
After injecting ion to Schottky diode according to ion implanting amount Ф, the forward and reverse of Schottky diode can be made
Characteristic variations amount is respectively smaller than 5%~15% of forward and reverse characteristic when unimplanted ion；
Using the forward characteristic variation and reverse characteristic variation of TCAD software analog simulation Schottky diode, pass through simulation
Change the ion implanting amount Ф of Schottky diode, so that the forward direction of Schottky diode is special in TCAD software analog simulation
Property and reverse characteristic variable quantity Schottky diode is positive when being less than unimplanted ion and reverse characteristic 5%~15%, record
Ion implanting amount Ф (unit ions/cm at this time2)。
Preferably, the forward characteristic variable quantity and reverse characteristic variable quantity of above-mentioned Schottky diode are respectively smaller than not
Inject ion when Schottky diode forward characteristic and reverse characteristic 10%, ion implanting amount Ф at this time can be considered it is optimal from
Sub- injection rate.
TCAD software, full name are Technology ComputerAided Design, semiconductor process simulation and device
Simulation tool, the publisher of the software are U.S. Silvaco company.It is by setting the structural parameters of device, processing that it, which is acted on,
The parameters such as technique, external condition come the electrical property and internal state of analog device.
Step 3: determining ion implanting time t according to ion implanting amount Ф, and calculate value of ion beam current I: where from
Sub- injection length t is more than or equal to 5min；
Ion implanting time t, that is, ion implantation apparatus carries out runing time when ion implanting to Schottky diode, also known as
For irradiation time.It can should be greater than 5 points by the balanced specific value considered to determine electric current and time, usual ion implanting time
Clock, to control injection rate error；It, can be by changing since different ion implantation apparatuses has different current margins
Become ion implanting time t to come so that value of ion beam current I is in the current margin of ion implantation apparatus, the time should usually control
Between 5 minutes to 3 hours, meet final ion implanting amount.
Step 4: according to ion source voltage value V, value of ion beam current I, ion implanting depth D and ion implanting time t,
Ion is injected to the active area of Schottky diode.
The parameters pair such as ion source voltage value V, value of ion beam current I and the ion implanting time t determined using above-mentioned steps
After ion implantation apparatus is configured, ion implanting is carried out to Schottky diode.
As shown in Fig. 2, a is metal electrode, b is active area, and arrow direction is ion implanting direction.Ion is an externally injected into
Into the certain depth in the active area of Schottky diode.
Space charged particle can generate a variety of radiation injuries in device inside, wherein shifted radiation damages most serious of all
Wound.Shifted radiation damage can be the defects of device inside generates vacancy, interstitial atom, to severely impact the performance ginseng of device
Number.Shifted radiation defect mainly causes the carrier of Schottky diode active area to be captured by radiation defect, so that active area
Carrier concentration be greatly reduced, the conductivity of active area reduces, to cause the degeneration of forward characteristic.Therefore, active area is
The sensitizing range of Schottky diode shifted radiation damage is seriously influenced by shifted radiation damage.The present invention, which uses, to be had
The mode that deep ion injects in source region effectively raises the Radiation hardness of Schottky diode.
Specific embodiment two
Present embodiment two and the difference of specific embodiment one are that ion implanting depth D is 1~10 μm.
Specific embodiment three
Present embodiment three and the difference of specific embodiment two are, in step 2,
The forward characteristic parameter of Schottky diode are as follows: positive in forward current-voltage curve of Schottky diode
Voltage value is the corresponding forward current value in the place 1V；
The reverse characteristic of Schottky diode are as follows: in the reverse current-voltage curve of Schottky diode, backward voltage
Value is the corresponding reverse value of current in the place 100V；
The forward characteristic variable quantity of Schottky diode are as follows: after Schottky diode injects ion, forward current value is opposite
The variable quantity of forward current value when unimplanted ion；
The reverse characteristic variable quantity of Schottky diode are as follows: after Schottky diode injects ion, reverse value of current is opposite
The variable quantity of reverse value of current when unimplanted ion.
Specific embodiment four
Present embodiment four and the difference of specific embodiment two or three are that step 1 includes:
Step 1 one, according to the structural parameters of Schottky diode, ionic type and ion implanting depth D, calculate from
The ion energy E of beamlet；
Using the structural parameters of Schottky diode, injection Schottky diode is obtained using SRIM software analog simulation
The ion energy E and range information of ion, wherein range corresponds to the ion implanting depth D of ion implanting Schottky diode,
This ion implanting depth D is to need to be determined in advance a value, selects incident ion (need to inject Schottky two by SRIM software
The ionic type of pole pipe) and target ingredient (being learnt by Schottky diode itself) after.SRIM software can generate a table, table
Include ion energy E corresponding to different ranges (ion implanting depth D) in lattice, and then selects and predetermined ion implanting
The corresponding ion energy E (unit eV) of depth D.
SRIM software, full name The Stopping and Range ofIons in Matter, by James Ziegler
Establishment is common particle and material interaction simulation softward in the world.The software is open source software, that is, discloses source code.
Its effect is the movement and the mode of action of simulation particle in the material, can calculate particle energy loss in the material, range,
The information such as collision cross-section.
Step 1 two calculates ion source voltage value V using following formula:
Wherein, C is unit ionic charge number, is determined by ionic type.
Unit ionic charge number, that is, electrically charged the quantity of unit ion institute, such as unit Si4+There are four charges for ion band, i.e.,
C=4.
Specific embodiment five
Present embodiment five and the difference of specific embodiment four are, in step 3, are calculated using following formula
Value of ion beam current I:
Wherein, q is unit quantities of charge.
Specific embodiment six
Present embodiment six and the difference of specific embodiment one are, further include,
Step 5: being made annealing treatment to the Schottky diode for completing ion implanting.
Specific embodiment seven
Present embodiment seven and the difference of specific embodiment one, two, three, five or six be, Schottky diode
For SiC schottky diode.
Silicon carbide is one of third generation semiconductor material material, is at present the research hotspot in anti-radiation field.Carbonization
The broad stopband of silicon materials and high atom critical displacement can determine that its device has strong anti-electromagnetic wave impact and high anti-spoke
Penetrate the ability of destruction.The structural parameters of silicon carbide device can advanced optimize, and Radiation hardness is expected to be improved again.Therefore
The present invention is exactly to advanced optimize to the structural parameters of SiC schottky diode.
Specific embodiment eight
Present embodiment eight and the difference of specific embodiment seven are, need to inject the ionic species of Schottky diode
Type is carbon ion, silicon ion or hybrid ionic, and hybrid ionic is mixed by carbon ion and silicon ion.
When Schottky diode is SiC schottky diode, injection ionic type can for silicon ion or carbon from
Son, to avoid the doping type and concentration inside SiC schottky diode is changed；Wherein, silicon ion and carbon ion can be
The silicon ion and carbon ion of all kinds, i.e. unit ionic charge number are generally 1~4 silicon ion and carbon ion.Also, silicon from
Son and carbon ion can to the same SiC schottky diode handle when it is mixed.
Specific embodiment nine
Present embodiment nine and the difference of specific embodiment eight are that the structural parameters of Schottky diode are each
Size, material type, density and the doping concentration of structure；Each structure is respectively passivation layer, substrate layer, electrode district and active area.
Wherein, size includes the value of length.
Specific embodiment ten
Present embodiment ten and the difference of specific embodiment seven are, in step 5, annealing temperature be 400 DEG C~
1100 DEG C, annealing time is 0.5min~1min.The SiC Schottky two based on deep ion injection mode is completed after annealing
Pole pipe resist displacement Radiation Hardened process flow.
As shown in figure 3, the Radiation hardness contrast schematic diagram of SiC schottky diode, abscissa is silicon carbide Xiao Te
Radiation absorbed dose of the based diode under Ion Irradiation on Multi-walled Carbon source, ordinate are the variation of SiC schottky diode forward characteristic
Amount normalization result.Using Schottky diode resist displacement Radiation Hardened method of the invention to SiC schottky diode into
Row resist displacement Radiation Hardened, and by after reinforcing SiC schottky diode with do not carry out the silicon carbide of resist displacement Radiation Hardened
Schottky diode carries out radiation contrast simultaneously.
This experiment selects carbon (C) ion irradiation source to irradiate SiC schottky diode, wherein dosage rate is
1rad/s, accumulated dose 100krad, select at 100krad and the forward characteristic variable quantity of SiC schottky diode is returned
One, which changes result (forward current at forward voltage 1V), is used as capability of resistance to radiation criterion.As seen from Figure 3, with Flouride-resistani acid phesphatase be not added add
Solid SiC schottky diode compare, after Schottky diode resist displacement Radiation Hardened method of the invention is reinforced
SiC schottky diode resist displacement irradiation ability improves about 2.8 times.It follows that the anti-position of Schottky diode of the invention
Radiation Hardened method is moved, influence of the shifted radiation defect to device performance can be greatly reduced, improves two pole of silicon carbide schottky
The Radiation hardness of pipe.
Claims (10)
1. the Schottky diode resist displacement Radiation Hardened method based on deep ion injection mode, which is characterized in that specific step
It is rapid as follows:
Step 1: according to the structural parameters of Schottky diode, determination need to inject the Schottky diode ionic type and
Ion implanting depth D, and calculate ion source voltage value V；
Step 2: calculating ion implanting amount Ф, the ion implanting amount Ф meets following condition:
After injecting ion to Schottky diode according to ion implanting amount Ф, the forward and reverse characteristic of Schottky diode can be made
Variable quantity is respectively smaller than 5%~15% of forward and reverse characteristic when unimplanted ion；
Step 3: determining ion implanting time t according to the ion implanting amount Ф, and calculate value of ion beam current I: where institute
Ion implanting time t is stated more than or equal to 5min；
Step 4: according to the ion source voltage value V, value of ion beam current I, ion implanting depth D and ion implanting time t,
Ion is injected to the active area of Schottky diode.
2. the Schottky diode resist displacement Radiation Hardened side according to claim 1 based on deep ion injection mode
Method, which is characterized in that the ion implanting depth D is 1~10 μm.
3. the Schottky diode resist displacement Radiation Hardened side according to claim 2 based on deep ion injection mode
Method, which is characterized in that in step 2,
The forward characteristic of Schottky diode are as follows: in forward current-voltage curve of the Schottky diode, forward voltage
Value is the corresponding forward current value in the place 1V；
The reverse characteristic of Schottky diode are as follows: in the reverse current-voltage curve of the Schottky diode, backward voltage
Value is the corresponding reverse value of current in the place 100V；
The forward characteristic variable quantity of the Schottky diode are as follows: after Schottky diode injects ion, the forward current value
The variable quantity of forward current value when relative to unimplanted ion；
The reverse characteristic variable quantity of the Schottky diode are as follows: after Schottky diode injects ion, the reverse value of current
The variable quantity of reverse value of current when relative to unimplanted ion.
4. the Schottky diode resist displacement Radiation Hardened according to claim 2 or 3 based on deep ion injection mode
Method, which is characterized in that step 1 includes:
Step 1 one, according to the structural parameters of the Schottky diode, ionic type and ion implanting depth D, calculate from
The ion energy E of beamlet；
Step 1 two calculates ion source voltage value V using following formula:
Wherein, C is unit ionic charge number, is determined by the ionic type.
5. the Schottky diode resist displacement Radiation Hardened side according to claim 4 based on deep ion injection mode
Method, which is characterized in that in step 3, calculate the value of ion beam current I using following formula:
Wherein, q is unit quantities of charge.
6. the Schottky diode resist displacement Radiation Hardened side according to claim 1 based on deep ion injection mode
Method, which is characterized in that further include,
Step 5: being made annealing treatment to the Schottky diode for completing ion implanting.
7. according to claim 1, the Schottky diode resist displacement spoke described in 2,3,5 or 6 based on deep ion injection mode
According to reinforcement means, which is characterized in that the Schottky diode is SiC schottky diode.
8. the Schottky diode resist displacement Radiation Hardened side according to claim 7 based on deep ion injection mode
Method, which is characterized in that the ionic type that need to inject Schottky diode is carbon ion, silicon ion or hybrid ionic, the mixing
Ion is mixed by carbon ion and silicon ion.
9. the Schottky diode resist displacement Radiation Hardened side according to claim 8 based on deep ion injection mode
Method, which is characterized in that the structural parameters of the Schottky diode are that size, material type, density and the doping of each structure are dense
Degree；Each structure is respectively passivation layer, substrate layer, electrode district and active area.
10. the Schottky diode resist displacement Radiation Hardened side according to claim 6 based on deep ion injection mode
Method, which is characterized in that in step 5, annealing temperature is 400 DEG C~1100 DEG C, and annealing time is 0.5min~1min.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110473787A (en) * | 2019-08-21 | 2019-11-19 | 哈尔滨工业大学 | Gallium oxide Schottky diode resist displacement irradiance method based on deep ion injection |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103887171A (en) * | 2014-04-04 | 2014-06-25 | 哈尔滨工业大学 | Method for reinforcing radiation resistance of bipolar device based on second passivation layer passivation mode |
| CN103887155A (en) * | 2014-04-04 | 2014-06-25 | 哈尔滨工业大学 | Method for reinforcing movement radiation resistance of bipolar device based on base region ion injection mode |
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2019
- 2019-02-11 CN CN201910110228.9A patent/CN109860033B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103887171A (en) * | 2014-04-04 | 2014-06-25 | 哈尔滨工业大学 | Method for reinforcing radiation resistance of bipolar device based on second passivation layer passivation mode |
| CN103887155A (en) * | 2014-04-04 | 2014-06-25 | 哈尔滨工业大学 | Method for reinforcing movement radiation resistance of bipolar device based on base region ion injection mode |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110473787A (en) * | 2019-08-21 | 2019-11-19 | 哈尔滨工业大学 | Gallium oxide Schottky diode resist displacement irradiance method based on deep ion injection |
| CN110473787B (en) * | 2019-08-21 | 2022-03-25 | 哈尔滨工业大学 | Deep ion implantation-based gallium oxide Schottky diode displacement-resistant irradiation method |
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Inventor after: Liu Chaoming Inventor after: Wang Tianqi Inventor after: Zhang Yanqing Inventor after: Qi Chunhua Inventor after: Ma Guoliang Inventor after: Huo Mingxue Inventor after: Li Heyi Inventor after: Wei Diedan Inventor before: Liu Chaoming Inventor before: Wang Tianqi Inventor before: Zhang Yanqing Inventor before: Qi Chunhua Inventor before: Ma Guoliang Inventor before: Huo Mingxue Inventor before: Li Heyi Inventor before: Wei Diedan |
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