CN103887155B - A kind of bipolar device resist displacement Radiation Hardened method based on base ion implanting mode - Google Patents
A kind of bipolar device resist displacement Radiation Hardened method based on base ion implanting mode Download PDFInfo
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- CN103887155B CN103887155B CN201410135934.6A CN201410135934A CN103887155B CN 103887155 B CN103887155 B CN 103887155B CN 201410135934 A CN201410135934 A CN 201410135934A CN 103887155 B CN103887155 B CN 103887155B
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- 230000005855 radiation Effects 0.000 title claims abstract description 53
- 238000006073 displacement reaction Methods 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000005468 ion implantation Methods 0.000 claims abstract description 20
- 230000008859 change Effects 0.000 claims abstract description 12
- 238000000137 annealing Methods 0.000 claims abstract description 11
- 238000002347 injection Methods 0.000 claims abstract description 5
- 239000007924 injection Substances 0.000 claims abstract description 5
- 238000004088 simulation Methods 0.000 claims abstract description 4
- 150000002500 ions Chemical class 0.000 claims description 64
- 230000005611 electricity Effects 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 3
- -1 oxonium ion Chemical class 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 230000006378 damage Effects 0.000 abstract description 15
- 230000007547 defect Effects 0.000 description 10
- 239000002245 particle Substances 0.000 description 6
- 230000000191 radiation effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 2
- 240000002853 Nelumbo nucifera Species 0.000 description 2
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000001235 sensitizing effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000003471 anti-radiation Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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Abstract
A kind of bipolar device resist displacement Radiation Hardened method based on base ion implanting mode, belongs to electronic technology field.Adapt to the demand of bipolar device little to displacement radiation damage, that bipolar device Radiation hardness is strong.The present invention utilizes the structural parameters of bipolar device, uses the simulation of SRIM software to obtain energy and the range information of the ion injecting bipolar device；Use the current gain change of TCAD software simulation bipolar device, change the ion implanting amount of bipolar device, make the current gain variable quantity of TCAD software simulation bipolar device less than during unimplanted ion the 10% of bipolar device current gain, record ion implanting amount；And the voltage of ion implantation apparatus, electric current and injection length are set according to injecting the energy of ion of bipolar device, range information and ion implanting amount, finally make annealing treatment, it is achieved bipolar device resist displacement Radiation Hardened.The present invention is applicable to bipolar device is carried out resist displacement Radiation Hardened.
Description
Technical field
The invention belongs to electronic technology field.
Background technology
Electronics and proton in space radiation environment have strong impact to the performance of spacecraft electronic device, can cause electricity
From radiation effect, displacement radiation effect and single particle effect etc., cause the exception of electronic device or malfunctioning, even ultimately result in
There is catastrophic accident in spacecraft.Therefore, improve the Radiation hardness of bipolar device, for optimizing the selection of spacecraft
With design and the service reliability in-orbit of raising spacecraft, there is highly important practical meaning in engineering.
More serious on bipolar transistor impact in space radiation effect is shifted radiation damage.Incoming particle and target atom phase
Interaction, causes target atom lattice-site battle array to change (locally) and produce displacement radiation effect.When incoming particle and target
During atom generation reciprocal action, the bulk damage such as room, interstitial atom and related defects can be produced in target.Shifted radiation is imitated
The interstitial atom that should produce in a semiconductor material and vacancy defect are the direct results of displacement damage.These interstitial atoms and
Room can occur reciprocal action again, forms increasingly complex defect, inside semi-conducting material, especially produces in base
Trap or complex centre, thus reduce the minority carrier life time in semi-conducting material, cause the degeneration of device electrically or optically performance.
Base is the sensitizing range of shifted radiation damage, is also that silicon-based devices raising resist displacement radiation damage ability needs critical concern
Region.In the integrated circuit based on bipolar process, the importance producing shifted radiation degree of injury in base is the most prominent
Go out.
Displacement radiation effect can directly affect the potential field of lattice of the Si body material of bipolar transistor, thus causes device electrical performance
Decline.The displacement damage effect that bipolar device is caused by charged particle is to produce interstitial atom and room in Si body.
The interstitial atom formed and room are dynamically changes, can move, be combined and produce stable defect in Si body.
Although involved physical process is more complicated, final result is to form complex centre, causes minority carrier in quasiconductor
Service life reduction, thus cause the reduction of current gain.The fluence of charged particle irradiation is the biggest, and formed in Si body is compound
Centric quantity is the most.The research work of our early stage finds, drawing artificially by the way of ion implanting in the base of device
Enter defect trap, make the shifted radiation defect within base keep stable, not the significant change because of the increase of radiation fluence, from
And improve the Radiation hardness of bipolar device.
Therefore the technology that the damage of a kind of shifted radiation is little, improve bipolar device Radiation hardness it is badly in need of.
Summary of the invention
The present invention is the demand in order to adapt to the bipolar device little to displacement radiation damage, bipolar device Radiation hardness is strong,
Propose a kind of bipolar device resist displacement Radiation Hardened method based on base ion implanting mode.
A kind of bipolar device resist displacement Radiation Hardened method based on base ion implanting mode of the present invention, the method
Concretely comprise the following steps:
Step one, utilize the structural parameters of bipolar device, use the simulation of SRIM software obtain inject bipolar device from
The energy of son and range information；
The structural parameters of described bipolar device are material composition, density and thickness；
Step 2, the current gain using TCAD software to simulate bipolar device change, and change the ion note of bipolar device
Enter amount, make the current gain variable quantity of TCAD software simulation bipolar device less than bipolar device electric current during unimplanted ion
The 10% of gain, records ion implanting amount；
Step 3, the energy simulating the ion injecting bipolar device obtained according to step one and range information and step 2 obtain
The ion implanting amount obtained, calculates the voltage of ion implantation apparatus, electric current and ion implanting time；
The voltage of described calculating ion implantation apparatus, electric current and the method for ion implanting time be:
Employing formula:
Calculating the voltage V obtaining ion implantation apparatus, in formula, the unit of voltage is volt V；E is ion energy, and unit is eV；
C is ion band electricity；
Employing formula:
Calculating the electric current I obtaining ion implantation apparatus, in formula, Φ is ion fluence, and C is ion band electricity, and q is unit electricity
Lotus, t is exposure time, i.e. ion implantation apparatus runs the time；
Step 4, the voltage of ion implantation apparatus, electric current and the ion implanting time that obtain according to step 3, to ion implantation apparatus
It is configured, bipolar device is carried out ion implanting；
Step 5, the bipolar device after completing ion implanting is made annealing treatment, complete after annealing based on base from
The bipolar device resist displacement Radiation Hardened of sub-injection mode.
The present invention, by the way of base ion implanting, is artificially induced defect trap, makes the shifted radiation defect within base
Reach certain degree of saturation, and keep stable, not the significant change because of the increase of radiation fluence, thus improve ambipolar device
The Radiation hardness of part.And with for use method of the present invention carry out the bipolar device that processes compared with Radiation hardness carry
High about 3-5 times.
Accompanying drawing explanation
Fig. 1 is method flow diagram of the present invention；
Fig. 2 is base ion implanting schematic diagram；
Fig. 3 is that bipolar device Radiation hardness with or without base ion implanting mode contrasts schematic diagram after irradiation damage.
Detailed description of the invention
Detailed description of the invention one, see Fig. 1, Fig. 2 illustrate described in present embodiment, present embodiment a kind of based on base from
The bipolar device resist displacement Radiation Hardened method of sub-injection mode, concretely comprising the following steps of the method:
Step one, utilize the structural parameters of bipolar device, use the simulation of SRIM software obtain inject bipolar device from
The energy of son and range information；
The structural parameters of described bipolar device are material composition, density and thickness；
Step 2, the current gain using TCAD software to simulate bipolar device change, and change the ion note of bipolar device
Enter amount, make the current gain variable quantity of TCAD software simulation bipolar device less than bipolar device electric current during unimplanted ion
The 10% of gain, records ion implanting amount；
Step 3, the energy simulating the ion injecting bipolar device obtained according to step one and range information and step 2 obtain
The ion implanting amount obtained, calculates the voltage of ion implantation apparatus, electric current and ion implanting time；
The voltage of described calculating ion implantation apparatus, electric current and the method for ion implanting time be:
Employing formula:
Calculating the voltage V obtaining ion implantation apparatus, in formula, the unit of voltage is volt V；E is ion energy, and unit is eV；
C is ion band electricity；
Employing formula:
Calculating the electric current I obtaining ion implantation apparatus, in formula, Φ is ion fluence, and C is ion band electricity, and q is unit electricity
Lotus, t is exposure time, i.e. the ion implanting time；
Step 4, the voltage of ion implantation apparatus, electric current and the ion implanting time that obtain according to step 3, to ion implantation apparatus
It is configured, bipolar device is carried out ion implanting；
Step 5, the bipolar device after completing ion implanting is made annealing treatment, complete after annealing based on base from
The bipolar device resist displacement Radiation Hardened of sub-injection mode.
Space charged particle can produce multiple radiation damage, the most most serious of all shifted radiation damage at device inside.Position
Move radiation damage and can produce the defect such as room, interstitial atom at device inside, thus severely impact the performance parameter of device.
Base is the sensitizing range of bipolar device shifted radiation damage, and serious being damaged by shifted radiation is affected.The present invention uses
The mode of base ion implanting effectively raises the Radiation hardness of bipolar device.
Detailed description of the invention two, present embodiment are based on base ion implanting mode to the one described in detailed description of the invention one
The further illustrating of bipolar device resist displacement Radiation Hardened method, the ion described in step one be oxonium ion or carbon from
Son.
Detailed description of the invention three, embodiment are a kind of based on base ion implanting mode to described in detailed description of the invention one
Further illustrating of bipolar device resist displacement Radiation Hardened method, the annealing temperature described in step 5 is 400 DEG C-1100 DEG C,
Annealing time is 0.5 minute to 1 minute.
Use the method for the invention that bipolar device carries out resist displacement Radiation Hardened, and the device after reinforcing with do not enter
The bipolar device of row resist displacement Radiation Hardened carries out radiation contrast simultaneously, as it is shown on figure 3, the Flouride-resistani acid phesphatase energy of bipolar device
Power contrast schematic diagram.C ion irradiation source is selected in this experiment, and close rate is 1rad/s, and accumulated dose is 100krad, with electric current
Change in gain amount is-60 as failure criteria.As seen from the figure, compared with the bipolar transistor not adding radiation hardened, warp
Cross the transistor resist displacement irradiation ability after the method for the invention is reinforced and improve about 3.5 times.Based on base ion implanting mode
Bipolar device resist displacement Radiation Hardened method, the impact on device performance of the shifted radiation defect can be greatly reduced, improve
The Radiation hardness of bipolar device.
The present invention uses existing SRIM software and TCAD software, emulates bipolar device, is effectively shortened
Parameter is fixed time and program really, it is possible to quickly determine ion implanting desired parameters.
It is right that bipolar device resist displacement Radiation Hardened method based on base ion implanting mode of the present invention can be not only used for
Existing bipolar device carries out radiation hardened, it is also possible to carries out in the production process of bipolar device, is directly produced out
There is the bipolar device of resist displacement irradiation behaviour, optimize the anti-radiation performance of bipolar device, the present invention be one important
Resist displacement Radiation Hardened technology.
Claims (3)
1. a bipolar device resist displacement Radiation Hardened method based on base ion implanting mode, it is characterised in that the party
Concretely comprising the following steps of method:
Step one, utilize the structural parameters of bipolar device, use the simulation of SRIM software to obtain the ion injecting bipolar device
Energy and range information；
The structural parameters of described bipolar device are material composition, density and thickness；
Step 2, the current gain using TCAD software to simulate bipolar device change, and change the ion implanting of bipolar device
Amount, makes the current gain variable quantity of TCAD software simulation bipolar device less than bipolar device current gain during unimplanted ion
10%, record ion implanting amount；
Step 3, the energy simulating the ion injecting bipolar device obtained according to step one and range information and step 2 obtain
The ion implanting amount obtained, calculates the voltage of ion implantation apparatus, electric current and ion implanting time；
The voltage of described calculating ion implantation apparatus, electric current and the method for ion implanting time be:
Employing formula:
Calculating the voltage V obtaining ion implantation apparatus, in formula, the unit of voltage is volt；E is ion energy, and unit is eV；C
For ion band electricity；
Employing formula:
Calculating the electric current I obtaining ion implantation apparatus, in formula, Φ is ion fluence, and C is ion band electricity, and q is unit electric charge,
T is exposure time, i.e. the ion implanting time；
Step 4, the voltage of ion implantation apparatus, electric current and the ion implanting time that obtain according to step 3, to ion implantation apparatus
It is configured, bipolar device is carried out ion implanting；
Step 5, the bipolar device after completing ion implanting is made annealing treatment, complete after annealing based on base from
The bipolar device resist displacement Radiation Hardened of sub-injection mode.
A kind of bipolar device resist displacement Radiation Hardened side based on base ion implanting mode the most according to claim 1
Method, it is characterised in that the ion described in step one is oxonium ion or carbon ion.
A kind of bipolar device resist displacement Radiation Hardened side based on base ion implanting mode the most according to claim 1
Method, it is characterised in that the annealing temperature described in step 5 is 400 DEG C-1100 DEG C, annealing time is 0.5 minute to 1 minute.
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| CN109860033B (en) * | 2019-02-11 | 2021-07-20 | 哈尔滨工业大学 | Schottky diode displacement-resistant irradiation strengthening method based on deep ion implantation mode |
| CN109888025B (en) * | 2019-03-21 | 2022-05-13 | 哈尔滨工业大学 | PIN diode displacement radiation-resistant reinforcement method based on deep ion implantation mode |
| CN110491970A (en) * | 2019-08-21 | 2019-11-22 | 哈尔滨工业大学 | Inversion four-junction solar battery resist displacement Radiation Hardened method based on deep ion injection mode |
| CN110459650A (en) * | 2019-08-21 | 2019-11-15 | 哈尔滨工业大学 | Inversion three-junction solar battery resist displacement Radiation Hardened method based on deep ion injection mode |
| CN110459649B (en) * | 2019-08-21 | 2021-04-27 | 哈尔滨工业大学 | Single crystal Si solar cell displacement-resistant irradiation method based on substrate deep layer ion implantation |
| CN110828549B (en) * | 2019-11-14 | 2022-08-16 | 西安微电子技术研究所 | Guard ring doped anti-radiation transistor structure and preparation method thereof |
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