CN103870664B - Bipolar device ELDRS effect acceleration experiment method based on hydrogen ion injecting - Google Patents
Bipolar device ELDRS effect acceleration experiment method based on hydrogen ion injecting Download PDFInfo
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- CN103870664B CN103870664B CN201410135842.8A CN201410135842A CN103870664B CN 103870664 B CN103870664 B CN 103870664B CN 201410135842 A CN201410135842 A CN 201410135842A CN 103870664 B CN103870664 B CN 103870664B
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Abstract
The invention provides a bipolar device ELDRS effect acceleration experiment method based on hydrogen ion injecting, and belongs to the technical field of electronics. The method is used for solving the problem that a universal method for acceleration experiment of the bipolar device ELDRS effect ground simulation experiment does not exist, that is, dosage rate enhancement effect acceleration experiment can not be achieved by using high dose rate irradiation experiment. The method comprises the following steps that according to the thickness and density of a passivation layer of a selected bipolar device, simulation is conducted by the adoption of SRIM software, the energy and the range of injected hydrogen ions are acquired, simulation is conducted by the adoption of TCAD software, anti-irradiation property parameters are acquired, current gain is conducted, fluence of the hydrogen ions is recorded, the hydrogen ions are injected into the passivation layer according to the energy, the range and the fluence of the injected hydrogen ions, and irradiation experiment is conducted to the bipolar device injected with the hydrogen ions. The method can be used in the space irradiation environment.
Description
Technical field
The present invention relates to a kind of Acceleration study method of bipolar device eldrs effect, belong to electronic technology field.
Background technology
In ionizing radiation environment, the radiation injury that bipolar device and circuit are subject under LDR irradiation, than
Much bigger under the conditions of high dose rate, here it is so-called enhanced low dose rate sensitivity (eldrs enhanced
lowdose rate sensitivity).In space environment, generally existing eldrs effect to electronic devices and components during one's term of military service, this
The capability of resistance to radiation ground Irradiation simulating experiment test appraisal procedure of electron components and parts brings huge challenge.Due to spacecraft
In-orbit typical radiation dose rate suffered during one's term of military service is 10-4～10-2Rad (si)/s, and common ground irradiation experiment institute
Close rate is 50～300rad (si)/s.Because the presence of eldrs effect is so that what ground experiment room method of testing obtained
Device radioresistance level and the actual capability of resistance to radiation serious non-compliance of the bipolar device using under space environment, thus to boat
The reliability of its electronic system brings great hidden danger.From the nineties in last century, low dose of bipolar device (transistor and circuit)
Dose rate enhancement effect (eldrs) and mechanism are just always the hot issue of electronic device space radiation effect study.Due to space flight
The radiation dose rate of the in-orbit radiation environment of device is very low, and ground simulating can not possibly simulate in-orbit close rate condition completely,
Needs carry out corresponding Acceleration study.However, still there is no the universal method of eldrs effect Acceleration study at present.If ground is real
Test that to carry out capability of resistance to radiation using the LDR assessment electronics components and parts of real space environment not only uneconomical but also time-consuming, it is right to need
The eldrs effect of bipolar device carries out Acceleration study.
Content of the invention
The invention aims to the eldrs effect ground simulating solving existing bipolar device does not have Acceleration study
Universal usability methods, can not be tested realizing the problem of LDR enhancement effect Acceleration study with high-dose-rate irradiation,
Provide a kind of bipolar device eldrs effect Acceleration study method based on hydrogen ion injection.
A kind of bipolar device eldrs effect Acceleration study method based on hydrogen ion injection of the present invention, the method
Detailed process be:
Step one, one bipolar device of selection, the thickness according to the bipolar device passivation layer chosen and density, utilize
Srim software emulates to the structure of this bipolar device, obtains hydrionic energy and the range of injection；
Step 2, the hydrionic energy according to step one determination and range, ambipolar to choose using tcad software
Device architecture is emulated, and obtains anti-radiation performance parameter；Described anti-radiation performance parameter includes current gain, superfluous base stage electricity
Stream, source current and input current；
Step 3, the hydrionic fluence of change injection bipolar device, make the electric current that tcad simulates bipolar device increase
Beneficial variable quantity is less than 10%, record hydrionic fluence now；
Step 4, the injection hydrogen ion injecting hydrionic energy and range and step 3 acquisition being obtained according to step one
Fluence, choose bipolar device passivation layer in inject hydrogen ion；
Step 5, to injection hydrogen ion after bipolar device carry out irradiation experiment.
Advantages of the present invention: hydrionic injection can have significant impact, Jin Erying to the eldrs effect of electronic device
The Radiation hardness of Chinese percussion instrument part, this illustrates that hydrionic injection can provide for furtheing investigate the microphysics mechanism of eldrs effect
Foundation.Hydrionic injection makes the state of the internal ionization damage defect of bipolar device change, thus accelerating electronics unit
The eldrs effect of device.The hydrogen ion injection technique based on different-energy and fluence for the present invention, by controlling different-energy and note
The hydrogen ion injection of amount, has greatly accelerated the eldrs effect of bipolar device, and the current gain enhancing bipolar transistor is damaged
Degree, and then reach the purpose shortening the eldrs effect experiment time.
The eldrs effect Acceleration study method and step of the present invention is simple, easily operated, and the method have time-consuming less,
The feature of low cost, can be used for the experiment of bipolar device eldrs effect under space radiation environment, alternatively optimizes ambipolar device
The anti-radiation performance of part and circuit provides necessary foundation.The eldrs effect Acceleration study method of the present invention is to electronic devices and components
The test of eldrs effect and research are significant.In bipolar device eldrs effect study and radiation hardened technology
In application, there is obvious advantage and be widely applied prospect.
Brief description
Fig. 1 is the ionising radiation defect distribution schematic diagram of bipolar transistor；
Fig. 2 is that current gain variable quantity is with the change of irradiation fluence under the 70kev hydrogen ion injection condition of different fluences
Relation schematic diagram.
Specific embodiment
A kind of specific embodiment one: bipolar device eldrs effect based on hydrogen ion injection described in present embodiment
Acceleration study method, the detailed process of the method is:
Step one, one bipolar device of selection, the thickness according to the bipolar device passivation layer chosen and density, utilize
Srim software emulates to the structure of this bipolar device, obtains hydrionic energy and the range of injection；
Step 2, the hydrionic energy according to step one determination and range, ambipolar to choose using tcad software
Device architecture is emulated, and obtains anti-radiation performance parameter；Described anti-radiation performance parameter includes current gain, superfluous base stage electricity
Stream, source current and input current；
Step 3, the hydrionic fluence of change injection bipolar device, make the electric current that tcad simulates bipolar device increase
Beneficial variable quantity is less than 10%, record hydrionic fluence now；
Step 4, the injection hydrogen ion injecting hydrionic energy and range and step 3 acquisition being obtained according to step one
Fluence, choose bipolar device passivation layer in inject hydrogen ion；
Step 5, to injection hydrogen ion after bipolar device carry out irradiation experiment.
Specific embodiment two: present embodiment is described further to embodiment one, the hydrogen ion described in step one
The scope of energy be: 60kev-110kev.
Specific embodiment three: present embodiment is described further to embodiment one, the hydrogen ion described in step 3
The scope of fluence be: 1e9p/cm2-1e11p/cm2.
A kind of bipolar device eldrs effect Acceleration study method based on hydrogen ion injection of the present invention, its application
Object includes npn device, pnp device, digital bipolar circuit, simulation bipolar circuit and digital-to-analogue/modulus circuit.Do not affect bipolar
On the basis of the eldrs effect microphysics mechanism of device, injected by hydrogen ion, the ionising radiation defect of aggravation device inside
Produce, thus playing the purpose of its eldrs effect of Acceleration study.The ionising radiation defect distribution schematic diagram of bipolar transistor, such as
Shown in Fig. 1..
Radiation injury produced by LDR enhancement effect (eldrs effect) is to be with positive oxide charge and interfacial state
Main, this two classes defect can produce large effect to the superfluous base current of device and current gain, leads to device that performance occurs
Degenerate.High-dose-rate irradiation can form generation and the transmission that charged region hinders ionising radiation defect in the oxide skin(coating) of device,
By the hydrogen ion injection technique of different-energy and fluence, can avoid producing charged region inside the passivation layer of device, significantly carry
Rise the density of ionising radiation defect and the generation speed of oxide charge and interfacial state, and then shorten LDR and strengthen test
Testing time, reach and tested realizing low dosage with high-dose-rate irradiation under the hydrogen ion injection condition of different-energy and fluence
The purpose of rate enhancement effect accelerated test.
In order to the impact to bipolar transistor LDR enhancement effect for the hydrogen ion injection technique is described, Fig. 2 gives
Under the 70kev hydrogen ion injection condition of different fluences, current gain variable quantity is with the variation relation schematic diagram of irradiation fluence.Curve
1 indicates no ion implanting, current gain variable quantity during high dose rate；Curve 2 represents that injection rate is 1e9p/cm2When electric current
Change in gain amount；Curve 3 represents that injection rate is 1e10p/cm2When current gain variable quantity；Curve 4 represents that injection rate is
1e11p/cm2When current gain variable quantity；Curve 5 represents current gain variable quantity during LDR.As seen from the figure, hydrogen from
The fluence of son injection is higher, and under same absorbent dosage, radiation injury is bigger, and wherein, fluence is 1e11p/cm2Hydrogen ion injection
Condition high-dose-rate irradiation result and LDR radiation parameter are closest.
Claims (4)
1. a kind of bipolar device eldrs effect Acceleration study method based on hydrogen ion injection is it is characterised in that the method
Detailed process is:
Step one, one bipolar device of selection, the thickness according to the bipolar device passivation layer chosen and density, using srim
Software emulates to the structure of this bipolar device, obtains hydrionic energy and the range of injection；
Step 2, the hydrionic energy according to step one determination and range, using tcad software to the bipolar device chosen
Structure is emulated, and obtains anti-radiation performance parameter；Described anti-radiation performance parameter include current gain, superfluous base current,
Source current and input current；
Step 3, the hydrionic fluence of change injection bipolar device, make the current gain that tcad simulates bipolar device become
Change amount is less than 10%, record hydrionic fluence now；
Step 4, the hydrionic note of injection injecting hydrionic energy and range and step 3 acquisition being obtained according to step one
Amount, injects hydrogen ion in the passivation layer of the bipolar device chosen；
Step 5, to injection hydrogen ion after bipolar device carry out irradiation experiment.
2. a kind of bipolar device eldrs effect Acceleration study method based on hydrogen ion injection according to claim 1, its
It is characterised by, the scope of the hydrionic energy described in step one is: 60kev-110kev.
3. a kind of bipolar device eldrs effect Acceleration study method based on hydrogen ion injection according to claim 1, its
It is characterised by, the scope of the hydrionic fluence described in step 3 is: 1e9p/cm2-1e11p/cm2.
4. a kind of bipolar device eldrs effect Acceleration study method based on hydrogen ion injection according to claim 3, its
It is characterised by, the hydrionic fluence described in step 3 is 1e11p/cm2.
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Families Citing this family (8)
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| CN104849642B (en) * | 2015-04-29 | 2018-01-02 | 工业和信息化部电子第五研究所 | The pretreatment system and method for bipolar device enhanced low dose rate sensitivity experiment |
| CN106384716A (en) * | 2016-10-19 | 2017-02-08 | 哈尔滨工业大学 | Bipolar device irradiation resisting reinforcing method based on reduction of hydrogen content |
| CN108303629B (en) * | 2018-02-08 | 2020-09-15 | 哈尔滨工业大学 | Method for determining radiation effect generated by irradiation source in bipolar transistor |
| CN108254668B (en) * | 2018-02-09 | 2020-05-26 | 哈尔滨工业大学 | Method for accelerating formation of interface state defects in process of analyzing ionizing radiation damage of device |
| CN108362988B (en) * | 2018-02-09 | 2020-12-29 | 哈尔滨工业大学 | Method for inhibiting bipolar transistor low dose rate enhancement effect |
| CN108460196B (en) * | 2018-02-09 | 2021-11-19 | 哈尔滨工业大学 | Equivalent evaluation test method for ionization damage of heterogeneous irradiation source of bipolar device |
| CN109521295B (en) * | 2018-11-13 | 2021-04-13 | 中国空间技术研究院 | Low dose rate irradiation damage enhancement effect judgment method |
| CN112834846A (en) * | 2020-12-31 | 2021-05-25 | 中国科学院电工研究所 | Method for actively accelerating irradiation failure of semiconductor device |
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| CN103116176A (en) * | 2013-01-23 | 2013-05-22 | 哈尔滨工业大学 | Ground equivalent fluence calculating method for electronic component charged particle irradiation effect |
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