CN103884945B - Based on the LDR enhancement effect Acceleration study method changing temperature and dose rate - Google Patents
Based on the LDR enhancement effect Acceleration study method changing temperature and dose rate Download PDFInfo
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Abstract
Based on the LDR enhancement effect Acceleration study method changing temperature and dose rate, relate to electronic technology field.It is that test duration in order to solve LDR strengthen test is long, causes superfluous base current and current gain to produce the problem of larger impact.LDR enhancement effect accelerated test method step of the present invention is simple, is easy to operation.LDR enhancement effect accelerated test method step of the present invention is simple, is easy to operation.Technological approaches proposed by the invention significantly can reduce time and the expense of the test of LDR enhancement effect; reduce more than 15% on year-on-year basis; also can be and optimize bipolar transistor and circuit anti-radiation performance necessary foundation is provided; reduce the impact of superfluous base current and current gain generation; reduce 15% on year-on-year basis, the test of the LDR enhancement effect of electronic devices and components and research are significant.The present invention is applicable to electronic technology field.
Description
Technical field
The present invention relates to electronic technology field.
Background technology
In ionizing radiation environment, the radiation damage that bipolar device and circuit are subject under LDR irradiation, than much bigger under high dose rate condition, Here it is so-called enhanced low dose rate sensitivity (ELDRS).Electronic devices and components space environment during one's term of military service ubiquity ELDRS effect, this brings huge challenge to the capability of resistance to radiation ground Irradiation simulating experiment test appraisal procedure of electronic devices and components.If adopt the typical doses rate (10 of real space environment
-4~ 10
-2rad (Si)/s) capability of resistance to radiation assessment is carried out to electronic devices and components, irradiation experiment length consuming time, costly.But, current ground experiment room reality adopt mainly according to the exposure protocol of heavy dose of rate 50 ~ 300rad (Si)/s of American army mark, due to the existence of ELDRS effect, this means the capability of resistance to radiation grave fault of device Flouride-resistani acid phesphatase level and the electronic devices and components reality used under the LDR such as satellite, spacecraft radiation environment adopting this high dose rate method of testing to obtain, thus bring very big hidden danger to the reliability of satellite, spacecraft isoelectronic series system.Therefore, find a kind of consuming time short, cost is low and it is significant to produce the Accelerated evaluation method of the bipolar device ELDRS effect of the physical mechanism identical with under LDR radiation parameter.On the other hand, because space electronic devices and components must apply biased in use to it, the ELDRS effect of bias condition on electron device has significant impact.
Summary of the invention
The present invention is that the test duration in order to solve LDR strengthen test is long, causes superfluous base current and current gain to produce the problem of larger impact, thus provides the LDR enhancement effect Acceleration study method based on changing temperature and dose rate.
Based on the LDR enhancement effect Acceleration study method changing temperature and dose rate, the concrete steps of the method are:
Step one: first select bipolar device to be tested to adopt LDR to carry out irradiation, LDR is 0.001rad/s-0.1rad/s, irradiation temperature is-200 DEG C ~+50 DEG C, stop irradiation when the dosage of LDR irradiation is accumulated to 1/10 to 1/5 of LDR irradiation accumulated dose, and record the performance change curve of this device;
Step 2: alternative selects the bipolar device of same type to be tested, and first adopt high-dose-rate irradiation, described high dose rate is 1rad/s ~ 1000rad/s, and irradiation temperature is between 0 DEG C ~ 100 DEG C; The performance change produced when high dosage irradiation reaches the 50%-80% of the performance change described in step one, is transformed into LDR and proceeds irradiation to bipolar device; Dose rate, irradiation dose are identical with described in step one with irradiation temperature;
Step 3: repeat step 2 repeatedly, until the LDR irradiation accumulated dose required by the dose accumulation of device under LDR radiation parameter to test; The switching node that high-dose-rate irradiation is converted to LDR irradiation is that device performance change reaches 50% ~ 80% of the performance change of last LDR irradiation; Each LDR irradiation dose is more than or equal to 1 × 10
4rad, the irradiation accumulated dose of LDR is 1 × 10
5rad ~ 1 × 10
6rad; Each high-dose-rate irradiation dosage is more than or equal to 1 × 10
5rad, the irradiation accumulated dose of high dose rate is 1 × 10
6rad ~ 1 × 10
7rad; After test, in record irradiation process, the change of device sensitivity energy parameter, determines bipolar device irradiation damage degree of degeneration.
Based on the LDR enhancement effect Acceleration study method changing temperature and dose rate, it is characterized in that:
Step one: first adopt LDR to carry out irradiation to bipolar device, described LDR is 0.001rad/s ~ 0.1rad/s, and irradiation temperature is room temperature;
Step 2: when the dosage of LDR irradiation is more than or equal to 1 × 10
4after rad, be transformed into high dose rate and irradiation is proceeded to bipolar device, described high dose rate is 1rad/s ~ 1000rad/s, when high-dose-rate irradiation, temperature is lower than-100 degree, when high dose rate arrives accumulated dose 1/10 to 1/5, device temperature be increased to 100 degree and keep 5 minutes ~ 10 minutes; Be transformed into LDR again and proceed irradiation to bipolar device, the temperature of irradiation is room temperature;
Step 3: repeatedly, until the performance change amount of device reaches more than 80% of original performance, during LDR irradiation, dosage is more than or equal to 1 × 10 for repetition step one and step 2
4rad, irradiation accumulated dose is 1 × 10
5rad ~ 1 × 10
6rad, in record irradiation process, the change of bipolar device sensitive property parameter, determines bipolar device irradiation damage degree of degeneration, the curve of reconstruct LDR sensitive property parameter.
The invention has the beneficial effects as follows: LDR enhancement effect accelerated test method step of the present invention is simple, be easy to operation.Technological approaches proposed by the invention significantly can reduce time and the expense of the test of LDR enhancement effect; reduce more than 15% on year-on-year basis; also can be and optimize bipolar transistor and circuit anti-radiation performance necessary foundation is provided; reduce the impact of superfluous base current and current gain generation; reduce 15% on year-on-year basis, the test of the LDR enhancement effect of electronic devices and components and research are significant.In the enhancement effect research of bipolar device LDR and radiation hardened technology are applied, there are obvious advantage and application prospect widely.
Accompanying drawing explanation
Fig. 1 be embodiment one based on the schematic flow sheet of LDR enhancement effect Acceleration study method changing temperature and dose rate;
Fig. 2 be embodiment two based on the schematic flow sheet of LDR enhancement effect Acceleration study method changing temperature and dose rate;
Fig. 3 is the relation schematic diagram between the acquisition accumulated dose of embodiment one and performance degradation;
Fig. 4 is the acquisition irradiation dose of embodiment two and the relation schematic diagram of current gain variable quantity;
Fig. 5 is the result of variations emulation schematic diagram of the bipolar device forward input current under Different Dose Rates condition;
Fig. 6 be by accelerated test method process after test findings curve emulation schematic diagram;
Fig. 7 be by method process under cryogenic conditions after test findings curve emulation schematic diagram.
Embodiment
Embodiment one: present embodiment is described below in conjunction with Fig. 1 and Fig. 3, described in present embodiment based on the LDR enhancement effect Acceleration study method changing temperature and dose rate, the concrete steps of the method are:
Step one: first select bipolar device to be tested to adopt LDR to carry out irradiation, LDR is 0.001rad/s-0.1rad/s, irradiation temperature is-200 DEG C ~+50 DEG C, stop irradiation when the dosage of LDR irradiation is accumulated to 1/10 to 1/5 of LDR irradiation accumulated dose, and record the performance change curve of this device;
Step 2: alternative selects the bipolar device of same type to be tested, and first adopt high-dose-rate irradiation, described high dose rate is 1rad/s ~ 1000rad/s, and irradiation temperature is between 0 DEG C ~ 100 DEG C; The performance change produced when high dosage irradiation reaches the 50%-80% of the performance change described in step one, is transformed into LDR and proceeds irradiation to bipolar device; Dose rate, irradiation dose are identical with described in step one with irradiation temperature;
Step 3: repeat step 2 repeatedly, until the LDR irradiation accumulated dose required by the dose accumulation of device under LDR radiation parameter to test; The switching node that high-dose-rate irradiation is converted to LDR irradiation is that device performance change reaches 50% ~ 80% of the performance change of last LDR irradiation; Each LDR irradiation dose is more than or equal to 1 × 10
4rad, the irradiation accumulated dose of LDR is 1 × 10
5rad ~ 1 × 10
6rad; Each high-dose-rate irradiation dosage is more than or equal to 1 × 10
5rad, the irradiation accumulated dose of high dose rate is 1 × 10
6rad ~ 1 × 10
7rad; After test, in record irradiation process, the change of device sensitivity energy parameter, determines bipolar device irradiation damage degree of degeneration.
Embodiment two: present embodiment is described below in conjunction with Fig. 2 and Fig. 4, described in present embodiment based on the LDR enhancement effect Acceleration study method changing temperature and dose rate, the concrete steps of the method are:
Step one: first adopt LDR to carry out irradiation to bipolar device, described LDR is 0.001rad/s ~ 0.1rad/s, and irradiation temperature is room temperature;
Step 2: when the dosage of LDR irradiation is more than or equal to 1 × 10
4after rad, be transformed into high dose rate and irradiation is proceeded to bipolar device, described high dose rate is 1rad/s ~ 1000rad/s, when high-dose-rate irradiation, temperature is lower than-100 degree, when high dose rate arrives accumulated dose 1/10 to 1/5, device temperature be increased to 100 degree and keep 5 minutes ~ 10 minutes; Be transformed into LDR again and proceed irradiation to bipolar device, the temperature of irradiation is room temperature;
Step 3: repeatedly, until the performance change amount of device reaches more than 80% of original performance, during LDR irradiation, dosage is more than or equal to 1 × 10 for repetition step one and step 2
4rad, irradiation accumulated dose is 1 × 10
5rad ~ 1 × 10
6rad, in record irradiation process, the change of bipolar device sensitive property parameter, determines bipolar device irradiation damage degree of degeneration, the curve of reconstruct LDR sensitive property parameter.
Embodiment three: present embodiment is to being further qualified based on the LDR enhancement effect Acceleration study method changing temperature and dose rate described in embodiment one or two, and in present embodiment, irradiation bomb is selected
60co gamma-rays.
Embodiment four: present embodiment is to being further qualified based on the LDR enhancement effect Acceleration study method changing temperature and dose rate described in embodiment one or two, in present embodiment, sensitive property parameter comprises the input offset voltage Vio of the current gain of ambipolar discrete device, leakage current parameter and bipolar circuitry, input bias current Ibs, common-mode rejection ratio CMRR, open-loop voltage gain AvoL.
Embodiment five: present embodiment is to being further qualified based on the LDR enhancement effect Acceleration study method changing temperature and dose rate described in embodiment one or two, and in present embodiment, the model of selected bipolar circuitry is LM741.
The radiation damage that LDR enhancement effect produces is based on positive oxide charge and interface state, and this two classes defect can produce larger impact to the superfluous base current of device and current gain, causes device generation performance degradation.High-dose-rate irradiation can form generation and the transmission that charged region hinders ionising radiation defect in the oxide skin(coating) of device, pass through this method, the passivation layer inside of device can be avoided to produce charged region, greatly promote the density of ionising radiation defect and the generation speed of oxide charge and interface state, and then shorten the test duration of LDR strengthen test, reach the object realizing LDR enhancement effect accelerated test with high-dose-rate irradiation experiment.
In addition, under cryogenic, because the translational speed of electronics slows down, the electron hole pair produced in bipolar device oxide layer can be made to move slow down, effectively can suppress the generation of charged region in oxide layer, make the generation speed of its density greatly promoting ionising radiation defect and oxide charge and interface state, and then shorten the test duration of LDR strengthen test, also can realize the object adopting high-dose-rate irradiation test simulation LDR enhancement effect accelerated test.In order to verify the validity of this method, adopt the Co60 irradiation bomb under Different Dose Rates condition, wherein LDR is 0.001rad/s-0.1rad/s, and high dose rate is 1rad/s-1000rad/s, and test sample is LM741 type bipolar device.Fig. 5 is the result of variations of the bipolar device forward input current under Different Dose Rates condition, Fig. 6 be by the process of this accelerated test method after test findings curve.Fig. 7 be by method process under cryogenic conditions after test findings curve.As shown in the figure, the test findings of two class technology in this method is adopted to coincide good with the result directly adopting LDR to carry out testing.
Claims (5)
1., based on the LDR enhancement effect Acceleration study method changing temperature and dose rate, it is characterized in that: the concrete steps of the method are:
Step one: first select bipolar device to be tested to adopt LDR to carry out irradiation, LDR is 0.001rad/s-0.1rad/s, irradiation temperature is-200 DEG C ~+50 DEG C, stop irradiation when the dosage of LDR irradiation is accumulated to 1/10 to 1/5 of LDR irradiation accumulated dose, and record the performance change curve of this device;
Step 2: alternative selects the bipolar device of same type to be tested, and first adopt high-dose-rate irradiation, described high dose rate is 1rad/s ~ 1000rad/s, and irradiation temperature is between 0 DEG C ~ 100 DEG C; The performance change produced when high dosage irradiation reaches the 50%-80% of the performance change described in step one, is transformed into LDR and proceeds irradiation to bipolar device; The dosage of LDR, LDR irradiation is identical with described in step one with irradiation temperature;
Step 3: repeat step 2 repeatedly, until the LDR irradiation accumulated dose required by the dose accumulation of device under LDR radiation parameter to test; The switching node that high-dose-rate irradiation is converted to LDR irradiation is that device performance change reaches 50% ~ 80% of the performance change of last LDR irradiation; Each LDR irradiation dose is more than or equal to 1 × 10
4rad, the irradiation accumulated dose of LDR is 1 × 10
5rad ~ 1 × 10
6rad; Each high-dose-rate irradiation dosage is more than or equal to 1 × 10
5rad, the irradiation accumulated dose of high dose rate is 1 × 10
6rad ~ 1 × 10
7rad; After test, in record irradiation process, the change of bipolar device sensitive property parameter, determines bipolar device irradiation damage degree of degeneration.
2., based on the LDR enhancement effect Acceleration study method changing temperature and dose rate, it is characterized in that: the concrete steps of the method are:
Step one: first adopt LDR to carry out irradiation to bipolar device, described LDR is 0.001rad/s ~ 0.1rad/s, and irradiation temperature is room temperature;
Step 2: when the dosage of LDR irradiation is more than or equal to 1 × 10
4after rad, be transformed into high dose rate and irradiation is proceeded to bipolar device, described high dose rate is 1rad/s ~ 1000rad/s, when high-dose-rate irradiation, temperature is lower than-100 degree, when high dose rate arrives irradiation accumulated dose 1/10 to 1/5, device temperature be increased to 100 degree and keep 5 minutes ~ 10 minutes; Be transformed into LDR again and proceed irradiation to bipolar device, the temperature of irradiation is room temperature;
Step 3: repeatedly, until the performance change amount of device reaches more than 80% of original performance, during LDR irradiation, dosage is more than or equal to 1 × 10 for repetition step one and step 2
4rad, irradiation accumulated dose is 1 × 10
5rad ~ 1 × 10
6rad, in record irradiation process, the change of bipolar device sensitive property parameter, determines bipolar device irradiation damage degree of degeneration, the curve of reconstruct LDR sensitive property parameter.
3. the LDR enhancement effect Acceleration study method based on changing temperature and dose rate according to claim 1 and 2, is characterized in that: irradiation bomb is selected
60co gamma-rays.
4. the LDR enhancement effect Acceleration study method based on changing temperature and dose rate according to claim 1 and 2, is characterized in that: bipolar device sensitive property parameter comprises the input offset voltage Vio of the current gain of ambipolar discrete device, leakage current parameter and bipolar circuitry, input bias current Ibs, common-mode rejection ratio CMRR, open-loop voltage gain AvoL.
5. the LDR enhancement effect Acceleration study method based on changing temperature and dose rate according to claim 4, is characterized in that: the model of selected bipolar circuitry is LM741.
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| CN106353622B (en) * | 2016-10-19 | 2019-02-19 | 哈尔滨工业大学 | Change the home position testing method of electronic component high-energy electron irradiation effect under the conditions of temperature based on ar gas environment |
| CN108362988B (en) * | 2018-02-09 | 2020-12-29 | 哈尔滨工业大学 | Method for inhibiting bipolar transistor low dose rate enhancement effect |
| CN109521295B (en) * | 2018-11-13 | 2021-04-13 | 中国空间技术研究院 | Low dose rate irradiation damage enhancement effect judgment method |
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| CN102956420A (en) * | 2012-10-30 | 2013-03-06 | 中国科学院上海应用物理研究所 | Electronic radiation source generating device and method for generating low-dosage-rate electronic rays |
| CN103077762A (en) * | 2012-12-19 | 2013-05-01 | 中国科学院上海应用物理研究所 | Electron ray source generation device and method for generating low-dose-rate electron ray |
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| CN102956420A (en) * | 2012-10-30 | 2013-03-06 | 中国科学院上海应用物理研究所 | Electronic radiation source generating device and method for generating low-dosage-rate electronic rays |
| CN103077762A (en) * | 2012-12-19 | 2013-05-01 | 中国科学院上海应用物理研究所 | Electron ray source generation device and method for generating low-dose-rate electron ray |
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