CN103869199B - A kind of bipolar device LDR enhancement effect accelerated test method that soaks technology based on high-temperature hydrogen - Google Patents
A kind of bipolar device LDR enhancement effect accelerated test method that soaks technology based on high-temperature hydrogen Download PDFInfo
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Abstract
A bipolar device LDR enhancement effect accelerated test method that soaks technology based on high-temperature hydrogen, relates to electronic technology field. the present invention adopts the LDR assessment electronic devices and components of real space environment to carry out capability of resistance to radiation in order to solve existing ground experiment, causes the problem that exposure time is long. bipolar device electrical property under employing TCAD software simulation hydrogen atmosphere of the present invention and the Changing Pattern of ionising radiation defect, according to the oxide charge in bipolar device in hydrogen atmosphere and interface state density, obtain time and density of hydrogen that hydrogen soaks, soak by hydrogen, heating, the ionising radiation defect of accelerating bipolar device inside produces, thereby play the effect that LDR enhancement effect is evaluated of accelerating, reach by short object of time used compared with the exposure time of high-dose-rate irradiation bipolar device under high-temperature hydrogen soaking conditions and irradiation bipolar device under LDR condition. it can be used in astrionic system.
Description
Technical field
The present invention relates to a kind of bipolar device LDR enhancement effect accelerated test side based on high-temperature hydrogen immersion technologyMethod. Belong to electronic technology field.
Background technology
In ionizing radiation environment, the radiation injury that bipolar device and circuit are subject under LDR irradiation, than at heightMuch bigger under close rate condition, so-called LDR radiation injury enhancement effect (ELDRS) that Here it is. Electronic devices and components existSpace environment during one's term of military service ubiquity ELDRS effect, and this gives the capability of resistance to radiation ground Irradiation simulating of electronic devices and components realTest examination appraisal procedure has been brought huge challenge. Due to spacecraft in-orbit during one's term of military service suffered typical radiation dose rate be10-4～10-2Rad (Si)/s, and irradiation experiment close rate used in common ground is 50～300rad (Si)/s. Due to ELDRSThe existence of effect, make device radioresistance level that ground experiment chamber method of testing obtains with under space environment, use bipolarThe actual capability of resistance to radiation serious non-compliance of device, thus bring great hidden danger to the reliability of astrionic system. From upperRise the nineties in century, bipolar device (transistor and circuit) LDR enhancement effect (ELDRS-EnhancedLowDoseRateSensitivity) and mechanism be just the hot issue of electronic device space Study on Irradiation Effects always. Because spacecraft encircles in-orbitThe radiation dose rate in border is very low, and ground simulating can not be simulated close rate condition in-orbit completely, need to carry out correspondingAcceleration experiment. But, still do not have ELDRS effect to accelerate the universal method of experiment at present. If ground experiment adopts actualIt is not only uneconomical but also consuming time that the LDR assessment electronic devices and components of space environment carry out capability of resistance to radiation, need to be to bipolar deviceELDRS effect is carried out accelerated test.
Find that by research hydrogen can play critical shadow to the LDR enhancement effect of electronic device at inside of electronic componentRing effect, and then affect the Radiation hardness of device. The existence of hydrogen can make the state of device inside ionization damage defect changeBecome, thus the ELDRS effect of deepening electronic devices and components. Therefore the method that, the present invention soaks by hydrogen is accelerated bipolar crystalline substanceBody pipe internal dose rate enhancement effect. This not only can significantly reduce experimental expenses, also can be and optimizes bipolar transistor and circuitAnti-radiation performance provides necessary foundation, and the test of LDR enhancement effect and the research of whole integrated circuit are had to great meaningJustice.
Summary of the invention
The present invention adopts the LDR assessment electronic devices and components of real space environment to carry out in order to solve existing ground experimentCapability of resistance to radiation, causes the problem that exposure time is long. Now provide a kind of bipolar device based on high-temperature hydrogen immersion technology lowClose rate enhancement effect accelerated test method.
Soak the bipolar device LDR enhancement effect accelerated test method of technology based on high-temperature hydrogen, it comprise withLower step:
Bipolar device electrical property under step 1, employing TCAD software simulation hydrogen atmosphere and the variation of ionising radiation defectRule, according to the oxide charge in bipolar device in hydrogen atmosphere and interface state density, the time that obtains hydrogen immersion is10 minutes～5 hours, density of hydrogen scope was 0.01%-200%;
Step 2, the bipolar device in step 1 is placed in glass tube, utilizes mechanical pump to vacuumize, until glass tubeInterior vacuum, for till being equal to or less than 0.0001Pa, is then injected hydrogen, until the hydrogen in glass tube in glass tubeConcentration is the density of hydrogen that step 1 obtains, and sealed glass tube, obtains until the hydrogen soak time in glass tube reaches step 1Till the hydrogen soak time obtaining;
Step 3, the glass tube of sealing is put into furnace temperature is that the annealing furnace of 100～200 DEG C heats, be incubated 0.5 hour～5 hours;
Step 4, the glass tube that adopts Co-60 irradiation bomb to seal in irradiation steps three under high dose rate condition, reach settingBipolar device irradiation absorb accumulated dose, record the exposure time of this bipolar device.
The present invention adopts the variation rule of bipolar device electrical property under TCAD software simulation hydrogen atmosphere and ionising radiation defectRule, according to the oxide charge in bipolar device in hydrogen atmosphere and interface state density, obtains time and hydrogen that hydrogen soaksGas concentration, is soaked, is heated by hydrogen, and the ionising radiation defect of accelerating bipolar device inside produces, thereby plays accelerationThe effect of LDR enhancement effect, reaches with high-dose-rate irradiation bipolar device and LDR bar under hydrogen soaking conditionsUnder part, the exposure time of irradiation bipolar device is compared short object of time used. It can be used in astrionic system.
Brief description of the drawings
Fig. 1 is the ionising radiation defect distribution schematic diagram of bipolar device,
Fig. 2 is for having or not high-temperature hydrogen to soak under environment, superfluous base current under bipolar device LDR radiation parameterVariable quantity comparison diagram, wherein, 1 indicates to soak under environment without high-temperature hydrogen, and bipolar device LDR radiation parameter descendedThe variation diagram of surplus base current, 2 indicate that under high-temperature hydrogen immersion environment, bipolar device LDR radiation parameter descendedThe variation diagram of surplus base current,
Fig. 3 is under variable concentrations hydrogen soaking conditions, and current gain variable quantity is with the change curve comparison diagram of irradiation fluence,Wherein, curve 3 represents that under 100% concentration hydrogen soaking conditions, close rate is under 1rad/s radiation parameter, and current gain changesAmount is with the change curve of irradiation dose, and curve 4 represents under LDR 0.01rad/s radiation parameter, current gain variable quantityWith the change curve of irradiation dose, curve 5 represents that, under 50% concentration hydrogen soaking conditions, close rate is 1rad/s irradiation barUnder part, current gain variable quantity is with the change curve of irradiation dose, and curve 6 represents under 10% concentration hydrogen soaking conditions,Close rate is under 1rad/s radiation parameter, and current gain variable quantity is with the change curve of irradiation dose, and curve 7 represents that 0% is denseUnder degree hydrogen soaking conditions, close rate is under 1rad/s radiation parameter, and current gain variable quantity is with the change curve of irradiation doseFigure.
Detailed description of the invention
Detailed description of the invention one: a kind of bipolar device low dosage that soaks technology based on high-temperature hydrogen described in present embodimentRate enhancement effect accelerated test method, it comprises the following steps:
Bipolar device electrical property under step 1, employing TCAD software simulation hydrogen atmosphere and the variation of ionising radiation defectRule, according to the oxide charge in bipolar device in hydrogen atmosphere and interface state density, the time that obtains hydrogen immersion is10 minutes～5 hours, density of hydrogen scope was 0.01%-200%;
Step 2, the bipolar device in step 1 is placed in glass tube, utilizes mechanical pump to vacuumize, until glass tubeInterior vacuum, for till being equal to or less than 0.0001Pa, is then injected hydrogen, until the hydrogen in glass tube in glass tubeConcentration is the density of hydrogen that step 1 obtains, and sealed glass tube, obtains until the hydrogen soak time in glass tube reaches step 1Till the hydrogen soak time obtaining;
Step 3, the glass tube of sealing is put into furnace temperature is that the annealing furnace of 100～200 DEG C heats, be incubated 0.5 hour～5 hours;
Step 4, the glass tube that adopts Co-60 irradiation bomb to seal in irradiation steps three under high dose rate condition, reach settingBipolar device irradiation absorb accumulated dose, record the exposure time of this bipolar device.
In present embodiment, applied TCAD software full name is TechnologyComputerAidedDesign, semiconductorProcessing simulation and device simulation instrument, the publisher of this software is Silvaco company of the U.S.. Its effect is by setting deviceThe parameter such as structural parameters, processing technology, external condition, come electrical property and the internal state of analog device.
Absorb under accumulated dose the same terms irradiation under present embodiment and LDR condition at the bipolar device irradiation of settingThe exposure time of bipolar device is compared, and exposure time is shorter.
In present embodiment, on the basis of LDR physical action mechanism that does not affect bipolar device, soak by hydrogen,The ionising radiation defect of accelerating device inside produces, thereby plays the effect of accelerating LDR enhancement effect, reaches and uses hydrogenUnder soaking conditions, high-dose-rate irradiation tests to simulate the object of LDR enhancement effect. The ionising radiation of bipolar device lacksFall into distribution schematic diagram, as shown in Figure 1.
The radiation injury that LDR enhancement effect produces is taking positive oxide charge and interfacial state as main, this two classes defect meetingSuperfluous base current on device and current gain produce larger impact, cause device generation performance degradation. High dose rate spokeNote forms generation and the transmission of charged region obstruction ionising radiation defect in the oxide skin(coating) of device, soaks technology by hydrogen,Can avoid the inner charged region that produces of oxide layer of device, greatly promote the density of ionising radiation defect and oxide charge andThe generation speed of interfacial state, and then the testing time of shortening LDR strengthen test, reach with high agent under hydrogen soaking conditionsDose rate irradiation experiment is realized the object that LDR enhancement effect is accelerated.
In present embodiment, as shown in Figure 2, compared with bipolar device under LDR radiation parameter, at identical spokeUnder absorbed dose of radiation, radiation dose rate is 0.1rad/s, and temperature is 150 DEG C, insulation in 2 hours, and 100% hydrogen soaks in environmentThe superfluous base current of the bipolar device of high-dose-rate irradiation is relatively high, approximately exceeds 10%. In addition, as shown in Figure 3,Hydrogen soaking concentration is higher, under same absorbent dosage radiation injury larger, and LDR radiation parameter is the most approaching.
Density of hydrogen scope the best in step 1 in present embodiment is 1%-100%.
Detailed description of the invention two: a kind of described in present embodiment and detailed description of the invention one soaks technology based on high-temperature hydrogenThe difference of bipolar device LDR enhancement effect accelerated test method is, in step 3, heating-up temperature is 150～200 DEG C, temperature retention time is 10 minutes～120 minutes.
In present embodiment, heating-up temperature is high, is conducive to hydrogen diffusion, therefore can shorten the insulation of the glass tube to sealingTime, shorten test period.
Detailed description of the invention three: a kind of described in present embodiment and detailed description of the invention one soaks technology based on high-temperature hydrogenThe difference of bipolar device LDR enhancement effect accelerated test method is, in step 1, obtain that hydrogen soaks timeBetween with the concrete grammar of density of hydrogen be:
Adopt under the time and density of hydrogen combination of the different hydrogen immersion of TCAD analog simulation ambipolar device in hydrogen atmosphereOxide charge density and interface state density in part, select the oxidation in bipolar device in hydrogen atmosphere according to simulation resultThing charge density is 1E10/cm3To 1E15/cm3Interface state density in bipolar device in scope and in hydrogen atmosphereFor 1E10/cm3To 1E15/cm3Time and density of hydrogen conduct that any one group of hydrogen in multi-group data in scope soaksSelection result.
Detailed description of the invention four: a kind of described in present embodiment and detailed description of the invention one soaks technology based on high-temperature hydrogenThe difference of bipolar device LDR enhancement effect accelerated test method is, in step 1, obtain that hydrogen soaks timeBetween with the concrete grammar of density of hydrogen be:
Adopt under the time and density of hydrogen combination of the different hydrogen immersion of TCAD analog simulation ambipolar device in hydrogen atmosphereOxide charge density and interface state density in part, select the oxidation in bipolar device in hydrogen atmosphere according to simulation resultThing charge density approaches 2E13/cm most3, and hydrogen atmosphere in interface state density in bipolar device approach 1E14/cm most3One group of hydrogen time of soaking and density of hydrogen as selection result.
Detailed description of the invention five: a kind of described in present embodiment and detailed description of the invention one soaks technology based on high-temperature hydrogenThe difference of bipolar device LDR enhancement effect accelerated test method is, bipolar device comprises NPN device, PNPDevice, digital bipolar circuit, simulated dual polar circuit and digital-to-analogue/modulus circuit.
Claims (4)
1. soak a bipolar device LDR enhancement effect accelerated test method for technology based on high-temperature hydrogen, its featureBe, it comprises the following steps:
Bipolar device electrical property under step 1, employing TCAD software simulation hydrogen atmosphere and the variation of ionising radiation defectRule, according to the oxide charge in bipolar device in hydrogen atmosphere and interface state density, the time that obtains hydrogen immersion is10 minutes～5 hours, density of hydrogen scope was 0.01%-200%;
Step 2, the bipolar device in step 1 is placed in glass tube, utilizes mechanical pump to vacuumize, until glass tubeInterior vacuum, for till being equal to or less than 0.0001Pa, is then injected hydrogen, until the hydrogen in glass tube in glass tubeConcentration is the density of hydrogen that step 1 obtains, and sealed glass tube, obtains until the hydrogen soak time in glass tube reaches step 1Till the hydrogen soak time obtaining;
Step 3, the glass tube of sealing is put into furnace temperature is that the annealing furnace of 100～200 DEG C heats, be incubated 0.5 hour～5 hours;
Step 4, the glass tube that adopts Co-60 irradiation bomb to seal in irradiation steps three under high dose rate condition, reach settingBipolar device irradiation absorb accumulated dose, record the exposure time of this bipolar device.
2. a kind of bipolar device LDR enhancement effect of soaking technology based on high-temperature hydrogen according to claim 1Accelerated test method, is characterized in that, in step 3, heating-up temperature is 150～200 DEG C, and temperature retention time is 0.5 hour～2 hours.
3. a kind of bipolar device LDR enhancement effect of soaking technology based on high-temperature hydrogen according to claim 1Accelerated test method, is characterized in that, in step 1, the time that acquisition hydrogen soaks and the concrete grammar of density of hydrogen are:
Adopt under the time and density of hydrogen combination of the different hydrogen immersion of TCAD analog simulation ambipolar device in hydrogen atmosphereOxide charge density and interface state density in part, select the oxidation in bipolar device in hydrogen atmosphere according to simulation resultThing charge density is 1E10/cm3To 1E15/cm3Interface state density in bipolar device in scope and in hydrogen atmosphereFor 1E10/cm3To 1E15/cm3Time and density of hydrogen conduct that any one group of hydrogen in multi-group data in scope soaksSelection result.
4. a kind of bipolar device LDR enhancement effect of soaking technology based on high-temperature hydrogen according to claim 1Accelerated test method, is characterized in that, in step 1, the time that acquisition hydrogen soaks and the concrete grammar of density of hydrogen are:
Adopt under the time and density of hydrogen combination of the different hydrogen immersion of TCAD analog simulation ambipolar device in hydrogen atmosphereOxide charge density and interface state density in part, select the oxidation in bipolar device in hydrogen atmosphere according to simulation resultThing charge density approaches 2E13/cm most3, and hydrogen atmosphere in interface state density in bipolar device approach 1E14/cm most3One group of hydrogen time of soaking and density of hydrogen as selection result.
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| CN106384716A (en) * | 2016-10-19 | 2017-02-08 | 哈尔滨工业大学 | Bipolar device irradiation resisting reinforcing method based on reduction of hydrogen content |
| CN108303629B (en) * | 2018-02-08 | 2020-09-15 | 哈尔滨工业大学 | Method for determining radiation effect generated by irradiation source in bipolar transistor |
| CN108346575A (en) * | 2018-02-09 | 2018-07-31 | 哈尔滨工业大学 | A method of inhibiting bipolar transistor ionization defect formation |
| CN108362988B (en) * | 2018-02-09 | 2020-12-29 | 哈尔滨工业大学 | Method for inhibiting bipolar transistor low dose rate enhancement effect |
| CN108511402B (en) * | 2018-05-31 | 2019-12-06 | 西北核技术研究所 | temperature-based radiation-resistant reinforcing method for CMOS (complementary Metal oxide semiconductor) process device |
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