CN103871873B - Bipolar device radiation hardened method based on launch site geometry - Google Patents
Bipolar device radiation hardened method based on launch site geometry Download PDFInfo
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- CN103871873B CN103871873B CN201410135985.9A CN201410135985A CN103871873B CN 103871873 B CN103871873 B CN 103871873B CN 201410135985 A CN201410135985 A CN 201410135985A CN 103871873 B CN103871873 B CN 103871873B
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- 230000005855 radiation Effects 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims abstract description 26
- 150000002500 ions Chemical class 0.000 claims description 33
- 238000000137 annealing Methods 0.000 claims description 10
- 238000004088 simulation Methods 0.000 claims description 7
- 238000005468 ion implantation Methods 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- CKHJYUSOUQDYEN-UHFFFAOYSA-N gallium(3+) Chemical compound [Ga+3] CKHJYUSOUQDYEN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 230000006378 damage Effects 0.000 abstract description 10
- 238000005516 engineering process Methods 0.000 abstract description 7
- 208000027418 Wounds and injury Diseases 0.000 abstract description 3
- 208000014674 injury Diseases 0.000 abstract description 3
- 230000006698 induction Effects 0.000 abstract description 2
- 230000005865 ionizing radiation Effects 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000011982 device technology Methods 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 231100000987 absorbed dose Toxicity 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 241000826860 Trapezium Species 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000003471 anti-radiation Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000003902 lesion Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
- H01L29/0808—Emitter regions of bipolar transistors of lateral transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Radiation-Therapy Devices (AREA)
- Bipolar Transistors (AREA)
Abstract
Bipolar device radiation hardened method based on launch site geometry, relates to electronic technology field.It is big in order to solve existing bipolar transistor and the circuit current gain degree of injury in space radiation environment, the problem that bipolar device Radiation hardness is low.The bipolar device radiation hardened method of the present invention remains traditional bipolar device Technology, and manufacturing technology steps is the simplest.New technique proposed by the invention can be by improving launch site geometry, oxide trap positive charge and the interfacial state impact on device parameter performance of ionizing radiation induction can be greatly lowered, it is obviously enhanced the Radiation hardness of bipolar device, enhances 25 times on year-on-year basis.The present invention is applicable to electronic technology field.
Description
Technical field
The present invention relates to electronic technology field.
Background technology
Bipolar transistor (BJT-Bipolar Junction Transistor) has good current driving ability, the linearity, low
Noise and excellent matching properties, be the elementary cell constituting bipolar integrated circuit.They simulation or hydrid integrated circuit and
BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) circuit there is important effect.These
Bipolar transistor and circuit are all widely used in spacecraft.Under space charged particle (proton and electronics) acts on, electronic device is subject to
Reliability and the life-span of spacecraft can be directly affected to damage.A large amount of space flight practice have shown that, many space flight accidents or fault all with electricity
Sub-device is correlated with by radiation damage, accounts for all kinds of spacecraft accident or more than the 40% of fault, and the economic loss caused is very
Huge.Bipolar transistor and circuit are radiation effect Sensitive Apparatuses, improve its anti-space radiation lesion capability and have important engineering
Background and practical meaning in engineering.
Bipolar device is sensitive to ionisation effect.Bipolar device comprises insulant, conductive material and semi-conducting material.Inhomogeneity
The bipolar device of type, the composition of its internal material therefor is different.Such as, crucial in silicon device insulant is SiO2Oxide layer.
Ionisation effect is mainly the SiO in Bipolarsilicondevice2Oxide layer causes damage, and at SiO2/ Si interface forms interfacial state.SiO2
Capture positive charge in Ceng and SiO2/ Si interface interfacial state can cause the recombination rate of emitter junction to increase, and causes transistor surplus base
Electrode current IBIncrease so that the degeneration of transistor current gain, leakage current increases, and then affects the performance of bipolar circuit.
If it is possible on the premise of not affecting bipolar device electrical performance indexes, based on improving launch site geometry, carry
Go out one and can significantly reduce oxide trap positive charge and interfacial state impact, and finally improve bipolar device Radiation hardness
Technological approaches, it will the radiation hardened of whole integrated circuit is significant.
Summary of the invention
The present invention is big in order to solve existing bipolar transistor and the circuit current gain degree of injury in space radiation environment,
The problem that bipolar device Radiation hardness is low, thus provide bipolar device radiation hardened method based on launch site geometry.
Bipolar device radiation hardened method based on launch site geometry, concretely comprising the following steps of the method:
Step one: use the technological parameter of TCAD software simulation bipolar device annular emission district pectinate texture, and according to simulation
Technological parameter use traditional handicraft to prepare the bipolar device of annular emission district pectinate texture；Described technological parameter is annular emission
The area of district's pectinate texture and girth；
Step 2: use the simulation of SRIM software to obtain the energy of the ion injecting bipolar device, the incident degree of depth and fluence information；
Step 3: use the current gain change of TCAD software simulation bipolar device, change the ion implanting amount of bipolar device,
Make the current gain variable quantity of TCAD software simulation bipolar device less than bipolar device current gain during unimplanted ion
10%, record ion implanting amount；
Step 4: the ion implanting amount obtained according to step 3, carries out parameter setting to ion implantation apparatus, sends out at bipolar device
The marginal position penetrating district carries out ion implanting, and forming cross section is trapezoidal launch site；
Step 5: the bipolar device after completing ion implanting is made annealing treatment, completes based on launch site several after annealing
The bipolar device radiation hardened of what structure.
The invention has the beneficial effects as follows: the bipolar device radiation hardened method of the present invention remains traditional bipolar device technique skill
Art, manufacturing technology steps is the simplest.New technique proposed by the invention can be by improving launch site geometry, can be significantly
Degree reduces oxide trap positive charge and the interfacial state impact on device parameter performance of ionizing radiation induction, is obviously enhanced bipolar device
The Radiation hardness of part, enhances 2-5 times on year-on-year basis.Therefore, the method has wide in bipolar device radiation hardened technology
Application prospect, it is adaptable to commercially produce.
Accompanying drawing explanation
Fig. 1 is method flow diagram of the present invention；
Fig. 2 is that bipolar device simplifies structural representation；
Fig. 3 is after low-energy electron irradiation, the bipolar device current gain inverse variable quantity of different launch sites girth/area ratio with
The variation relation of irradiation fluence；
Fig. 4 is under same absorbent dosage conditions, and superfluous base stage leakage current closes with the change of bipolar device launch site girth/area ratio
System；
Fig. 5 is the schematic diagram of pectinate texture launch site；
Fig. 6 is the schematic diagram of annular emission district pectinate texture；
Fig. 7 is the cross sectional representation of trapezoidal launch site；
Fig. 8 is the bipolar transistor current change in gain amount variation relation with absorbed dose of different emission area structure.
Detailed description of the invention
Detailed description of the invention one: present embodiment is described below in conjunction with Fig. 1, tying based on launch site geometry described in present embodiment
The bipolar device radiation hardened method of structure, concretely comprising the following steps of the method:
Step one: use the technological parameter of TCAD software simulation bipolar device annular emission district pectinate texture, and according to simulation
Technological parameter use traditional handicraft to prepare the bipolar device of annular emission district pectinate texture；Described technological parameter is annular emission
The area of district's pectinate texture and girth；
Step 2: use the simulation of SRIM software to obtain the energy of the ion injecting bipolar device, the incident degree of depth and fluence information；
Step 3: use the current gain change of TCAD software simulation bipolar device, change the ion implanting amount of bipolar device,
Make the current gain variable quantity of TCAD software simulation bipolar device less than bipolar device current gain during unimplanted ion
10%, record ion implanting amount；
Step 4: the ion implanting amount obtained according to step 3, carries out parameter setting to ion implantation apparatus, sends out at bipolar device
The marginal position penetrating district carries out ion implanting, and forming cross section is trapezoidal launch site；
Step 5: the bipolar device after completing ion implanting is made annealing treatment, completes based on launch site several after annealing
The bipolar device radiation hardened of what structure.
In above-mentioned embodiment, the structural parameters being obtained bipolar device by detection technique are material composition, density and thickness.
Detailed description of the invention two: present embodiment is to the bipolar device based on launch site geometry described in detailed description of the invention one
Radiation hardened method is further qualified, and in present embodiment, the ion described in step 2 is ion or the N of p-type launch site
The ion of type launch site.
Detailed description of the invention three: present embodiment is to the bipolar device based on launch site geometry described in detailed description of the invention two
Radiation hardened method is further qualified, and in present embodiment, the ion of described p-type launch site is boron, gallium ion.
Detailed description of the invention four: present embodiment is to the bipolar device based on launch site geometry described in detailed description of the invention two
Radiation hardened method is further qualified, and in present embodiment, the ion of described N-type launch site is phosphorus, arsenic ion.
Detailed description of the invention five: present embodiment is to the bipolar device based on launch site geometry described in detailed description of the invention one
Radiation hardened method is further qualified, and in present embodiment, the annealing temperature described in step 5 is 400 DEG C-1100 DEG C, moves back
The fire time is 5 minutes-50 minutes.
The application of the present invention includes NPN device, PNP device, numeral bipolar circuit, simulated dual polar circuit and digital-to-analogue/modulus
Circuit.In the case of the unit for electrical property parameters not affecting device, by improving element layout, conservative control launch site girth and area,
Girth/the area ratio of launch site is reduced in the range of reasonably.Bipolar transistor simplifies structural representation, as shown in Figure 2.
Fig. 3 shows after low-energy electron irradiation, the bipolar transistor current gain inverse change of different launch sites girth/area ratio
Measure the variation relation with irradiation fluence.As seen from the figure, under the conditions of identical irradiation fluence, the launch site girth of bipolar transistor/
Area ratio is the least, and irradiation damage degree is the least, and Radiation hardness is the strongest.
In order to further illustrate launch site girth/area ratio impact on bipolar device anti-radiation performance, Fig. 4 gives three kinds of differences
Under the conditions of absorbed dose, superfluous base stage leakage current is with the variation relation of bipolar transistor emitter district girth/area ratio.As seen from the figure,
Launch site girth/area ratio is the biggest, and superfluous base current is the biggest, causes the degree of injury of gain to aggravate, bipolar device Flouride-resistani acid phesphatase energy
Power reduces.
Visible by above-mentioned experimental result, the launch site girth/area ratio of bipolar device be affect its Radiation hardness important because of
Element.After irradiated experiment, the base current I of bipolar deviceBMainly include ideal current and radiation-induced irrational electric current.Cause
This, irrational electric current is it is important to note that and improved.Non-ideal electric current occlusion body recombination current again, depletion layer are multiple
Close electric current and surface recombination current.When bipolar device is by total dose damage (ionization damage), non-ideal electric current is mainly table
Face recombination current.Therefore, by optimizing bipolar device launch site girth/area ratio, radiation-induced surface can be substantially reduced multiple
Close electric current, and then improve the Radiation hardness of bipolar device.
As the above analysis, launch site girth/area ratio is the least, and irradiation damage degree is the least, and Radiation hardness is the strongest.Therefore,
On the premise of ensureing that launch site area is constant, by improving domain technological design to reduce the launch site girth area of bipolar device
Ratio.Generally, the launch site of bipolar transistor uses rectangular pectinate texture, as shown in Figure 5.This kind of structure girth area ratio
Relatively big, it is unfavorable for the raising of bipolar device Radiation hardness.The present invention will use annular emission district pectinate texture, now can make
Under the conditions of identical emitter area, its girth/area ratio is minimum, as shown in Figure 6.In order to reduce launch site girth/face further
Long-pending ratio, it is also possible to use trapezoidal emission area structure, under conditions of launch site area now can be made constant, reduces launch site girth,
As shown in Figure 6.This method after technique completes, need to select the dopant ion marginal position for launch site of different-energy
Carry out ion implanting, thus reduce launch site girth, as shown in Figure 7.
Utilize Co60 irradiation bomb that above-mentioned radiation hardened structure devices and the device being not added with Flouride-resistani acid phesphatase measure have been carried out Flouride-resistani acid phesphatase
Ability contrast test, close rate is 0.5rad/s, and accumulated dose is 100krad, using current gain variable quantity for-60 as losing efficacy
Criterion, acquired results is as shown in Figure 4.As can be seen from Figure 8, compared with traditional structure technique, there is annular emission district comb
Its failure threshold of the bipolar transistor of shape structure is high 2.3 times, and its failure threshold of bipolar transistor with trapezium structure is high 3.4 times.
Claims (2)
1. bipolar device radiation hardened method based on launch site geometry, it is characterised in that: concretely comprising the following steps of the method:
Step one: use the technological parameter of TCAD software simulation bipolar device annular emission district pectinate texture, and according to simulation
Technological parameter prepare the bipolar device of annular emission district pectinate texture；Described technological parameter is annular emission district pectinate texture
Area and girth；
Step 2: use the simulation of SRIM software to obtain the energy of the ion injecting bipolar device, the incident degree of depth and fluence information；
Described ion is ion or the ion of N-type launch site of p-type launch site；The ion of described p-type launch site is boron, gallium ion；
The ion of described N-type launch site is phosphorus, arsenic ion；
Step 3: use the current gain change of TCAD software simulation bipolar device, change the ion implanting amount of bipolar device,
Make the current gain variable quantity of TCAD software simulation bipolar device less than bipolar device current gain during unimplanted described ion
10%, record described ion implanting amount；
Step 4: the ion implanting amount obtained according to step 3, carries out parameter setting to ion implantation apparatus, sends out at bipolar device
The marginal position penetrating district carries out ion implanting, and forming cross section is trapezoidal launch site；
Step 5: the bipolar device after completing ion implanting is made annealing treatment, completes based on launch site several after annealing
The bipolar device radiation hardened of what structure.
Bipolar device radiation hardened method based on launch site geometry the most according to claim 1, it is characterised in that:
In annealing process described in step 5, annealing temperature is 400 DEG C-1100 DEG C, and annealing time is 5 minutes-50 minutes.
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104133974A (en) * | 2014-08-18 | 2014-11-05 | 中国科学院新疆理化技术研究所 | Germanium-silicon heterojunction bipolar transistor single event effect resisting strengthening method based on simulation |
| CN108362965B (en) * | 2018-02-09 | 2020-06-09 | 哈尔滨工业大学 | Method for inhibiting formation of oxide trapped charges based on displacement damage |
| CN108509729B (en) * | 2018-04-04 | 2021-12-14 | 中国工程物理研究院电子工程研究所 | Simulation method and system for post-irradiation characteristics of circuit of BJT device |
| CN109888025B (en) * | 2019-03-21 | 2022-05-13 | 哈尔滨工业大学 | PIN diode displacement radiation-resistant reinforcement method based on deep ion implantation mode |
| CN110828549B (en) * | 2019-11-14 | 2022-08-16 | 西安微电子技术研究所 | Guard ring doped anti-radiation transistor structure and preparation method thereof |
| CN111855705B (en) * | 2020-07-28 | 2023-03-28 | 哈尔滨工业大学 | Method for detecting radiation-induced defects in oxide layer of electronic device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4654687A (en) * | 1985-03-28 | 1987-03-31 | Francois Hebert | High frequency bipolar transistor structures |
| CN102104062A (en) * | 2009-12-21 | 2011-06-22 | 上海华虹Nec电子有限公司 | Bipolar transistor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH04329641A (en) * | 1991-04-30 | 1992-11-18 | Nec Ic Microcomput Syst Ltd | Npn bipolar transistor |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4654687A (en) * | 1985-03-28 | 1987-03-31 | Francois Hebert | High frequency bipolar transistor structures |
| CN102104062A (en) * | 2009-12-21 | 2011-06-22 | 上海华虹Nec电子有限公司 | Bipolar transistor |
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