CN109888025B - PIN diode displacement radiation-resistant reinforcement method based on deep ion implantation mode - Google Patents
PIN diode displacement radiation-resistant reinforcement method based on deep ion implantation mode Download PDFInfo
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Abstract
The invention discloses a PIN diode anti-displacement irradiation reinforcing method based on a deep ion implantation mode, relates to the field of semiconductor devices, and aims to solve the problem that carriers in an intrinsic region are captured by radiation defects to cause degradation of forward characteristics due to the fact that a PIN diode is subjected to a space irradiation effect, wherein the specific method comprises the following steps: step one, calculating an ion implantation depth D of the PIN diode and ion energy E corresponding to the ion implantation depth D through structural parameters of the PIN diode and the type of ions to be implanted into the PIN diode; step two, calculating the ion implantation amount phi; step three, calculating an ion source voltage value V through the ion energy E; step four, determining ion implantation time t according to the ion implantation amount phi, and calculating an ion beam current value I; and fifthly, implanting ions into the intrinsic region of the PIN diode according to the ion implantation depth D, the ion source voltage value V, the ion beam current value I and the ion implantation time t.
Description
Technical Field
The present invention relates to the field of semiconductor devices.
Background
The most serious influence on the non-oxidation layer type silicon carbide device in the space irradiation effect is displacement radiation damage, namely, the interaction between incident particles and target atoms causes the change of lattice atom positions of the target, thereby generating the displacement radiation effect.
Specifically, when the incident particles interact with the target atoms, bulk damage such as interstitial atom-vacancy pairs and related defects may be generated in the target. These interstitial atoms and vacancies interact to form more complex and stable defects that form recombination centers in the silicon carbide bulk material.
Taking a PIN diode as an example, the radiation defect mainly causes the carriers in the intrinsic region to be captured by the radiation defect, so that the carrier concentration in the intrinsic region is greatly reduced, and simultaneously, coulomb scattering is enhanced, so that the conductivity of the intrinsic region is reduced, and the degradation of the forward characteristic is caused. As the charged particle irradiation fluence increases, recombination centers form within the material increasing, causing more severe performance degradation.
Disclosure of Invention
The invention aims to solve the problem that carriers in an intrinsic region are captured by radiation defects to cause degradation of forward characteristics due to the fact that a PIN diode is subjected to a space irradiation effect, and provides a PIN diode displacement-resistant irradiation reinforcing method based on a deep ion implantation mode.
The invention discloses a PIN diode displacement radiation-resistant reinforcing method based on a deep ion implantation mode, which comprises the following specific steps:
step one, calculating an ion implantation depth D of the PIN diode and ion energy E corresponding to the ion implantation depth D through structural parameters of the PIN diode and the type of ions to be implanted into the PIN diode;
step two, calculating an ion implantation amount phi, wherein the ion implantation amount phi meets the following conditions:
injecting ions into the PIN diode according to the ion injection amount phi so as to enable the PIN diode to be in a state of being subjected to ion injection
The variation of the forward and reverse characteristics of the PIN diode is respectively less than 15% -25% of the forward and reverse characteristics when no ion is implanted;
the switching time variation of the PIN diode is less than 15% -25% of the switching time when the ions are not injected;
step three, calculating an ion source voltage value V through the ion energy E;
step four, determining the ion implantation time t according to the ion implantation amount phi, and calculating the ion beam current value I: wherein the ion implantation time t is satisfied, and t is more than 5min and less than 180 min;
and fifthly, implanting ions into the intrinsic region of the PIN diode according to the ion implantation depth D, the ion source voltage value V, the ion beam current value I and the ion implantation time t.
The invention has the beneficial effects that:
according to the invention, through a deep ion implantation mode, defects are artificially introduced into the PIN diode at a certain depth in advance through the ion implantation mode, so that a composite effect can be generated on the defects caused by radiation in future application, the displacement radiation defects in the device are kept stable and do not change obviously along with the irradiation fluence, and the irradiation resistance of the PIN diode is further improved. The method can be used for carrying out irradiation resistance reinforcement on the conventional PIN diode and can also be carried out in the production process of the PIN diode, the PIN diode with displacement irradiation resistance can be directly produced, and the irradiation resistance of the PIN diode is optimized. Compared with the untreated PIN diode, the PIN diode treated by the method provided by the invention has the radiation resistance improved by about 3 times.
Drawings
FIG. 1 is a flow chart of a PIN diode anti-displacement irradiation reinforcing method based on a deep ion implantation mode;
FIG. 2 is a schematic diagram of an ion implantation principle of the PIN diode anti-displacement irradiation strengthening method based on a deep ion implantation mode; wherein, P is a P-type region, N is an N-type region, an I intrinsic region is arranged between the P-type region and the N-type region, and A is an injection region;
FIG. 3 is a graph of the percentage of forward performance versus line of untreated silicon carbide PIN diodes at different radiation absorption doses for silicon carbide PIN diodes treated by the method of the present invention;
the broken line connected with the round points is a forward performance percentage broken line of the silicon carbide PIN diode processed by the method of the invention under different radiation absorption doses, and the broken line connected with the square points is a forward performance percentage broken line of the silicon carbide PIN diode which is not processed under different radiation absorption doses. In fig. 3, the ordinate is the percentage of forward performance (forward current at a forward voltage of 0.7V as 100%) and the abscissa is the radiation absorbed dose (rad) of the silicon carbide PIN diode.
FIG. 4 is a graph of normalized switching time delay versus line at different radiation absorption doses for a silicon carbide PIN diode treated by the method of the present invention versus an untreated silicon carbide PIN diode;
the broken line connected with the round points is a normalized switching time delay broken line of the silicon carbide PIN diode processed by the method of the invention under different radiation absorption doses, and the broken line connected with the square points is a normalized switching time delay broken line of the silicon carbide PIN diode which is not processed under different radiation absorption doses. In fig. 4, the ordinate is the normalized switching time delay (initial delay of 0) and the abscissa is the radiation absorption dose (rad) of the silicon carbide PIN diode.
Detailed Description
Detailed description of the invention
In the first embodiment, the existing SRIM software and TCAD software are used to perform performance simulation on the silicon carbide PIN diode, so that the time and procedure for determining parameters are effectively shortened, and the parameters required for ion implantation can be quickly determined.
SRIM software, known collectively as The Stopping and Range of ion in Matter, is compiled by James Ziegler and is a common international software for simulating particle-material interactions. The software is open source software, i.e., public source code. The function of the method is to simulate the motion and the action mode of the particles in the material, and the energy loss, the range, the collision cross section and other information of the particles in the material can be calculated.
TCAD software, collectively referred to as Technology computer aid Design, semiconductor process simulation and device simulation tools, is distributed by Silvaco corporation, usa. The function is to simulate the electrical property and the internal state of the device by setting the parameters of the structure, the processing technology, the external conditions and the like of the device.
The invention discloses a PIN diode displacement radiation-resistant reinforcing method based on a deep ion implantation mode, which comprises the following specific steps as shown in figure 1:
step one, calculating an ion implantation depth D of the PIN diode and ion energy E (unit is eV) corresponding to the ion implantation depth D through structural parameters of the PIN diode and the type of ions to be implanted into the PIN diode;
specifically, by using the structural parameters of the PIN diode, the SRIM software simulation is used to obtain the ion energy E and the range information of the ions implanted into the PIN diode, where the range corresponds to the ion implantation depth D of the ion implanted into the PIN diode, and the ion implantation depth D is a value that needs to be determined in advance, and the SRIM software is used to select the type of the incident ions (the type of the ions to be implanted into the PIN diode) and the target components (known from the PIN diode itself).
The ions with high energy lose energy (i.e. energy loss, which is the energy loss of the ions in the material and can be characterized as the ion energy in this application) due to their collision with electrons and atomic nuclei in the substrate during the incident process, and finally stop at a certain depth in the crystal lattice, which can be controlled by adjusting the ion energy E provided when the ions are incident. After providing the structural parameters of the PIN diode and the type of ions to be implanted into the PIN diode, the SRIM software generates a table, the table contains the ion energies E corresponding to different ranges (ion implantation depths D), and then the ion energy E corresponding to the predetermined ion implantation depth D is selected.
Step two, calculating the ion implantation amount phi, wherein the ion implantation amount phi meets the following conditions:
after ions are injected into the PIN diode according to the ion injection amount phi, the variation of the forward and reverse characteristics of the PIN diode is respectively smaller than 15% -25% of the forward and reverse characteristics when the ions are not injected; the switching time variation of the PIN diode is less than 15% -25% of the switching time when the ions are not injected;
preferably, the ion implantation amount Φ should be satisfied such that the amounts of change in the forward and reverse characteristics of the PIN diode are respectively less than 20% of the forward and reverse characteristics when no ion is implanted; the variation of the switching time of the PIN diode is less than 120% of the switching time when no ions are implanted.
Specifically, TCAD software is adopted to simulate the change of the forward characteristic and the reverse characteristic of the PIN diode, and the ion implantation amount phi of the PIN diode is changed in a simulated mode, so that in TCAD software simulation, the forward characteristic and the reverse characteristic change amount of the PIN diode are respectively smaller than the forward characteristic and the reverse characteristic of the PIN diode when ions are not implanted15% -25% of the characteristic, and the variation of the switching time of the PIN diode is less than 15% -25% of the switching time when the ions are not implanted, and the ion implantation amount phi (the unit is ions/cm) at the moment is recorded2)。
Preferably, after ions are implanted into the PIN diode according to the ion implantation amount Φ, the variation of the forward and reverse characteristics of the PIN diode should be respectively less than 20% of the forward and reverse characteristics when the ions are not implanted; the amount of variation in the switching time of the PIN diode should be less than 20% of the switching time without implanted ions.
Step three, calculating an ion source voltage value V through ion energy E;
specifically, the unit of the ion source voltage value V is V, which is a voltage value selected by the ion implanter when performing ion implantation on the PIN diode.
Step four, determining the ion implantation time t through the ion implantation amount phi, and calculating the ion beam current value I: wherein the ion implantation time t is satisfied, and t is more than 5min and less than 180 min;
specifically, the ion implantation time t is the operation time of the ion implanter during ion implantation of the PIN diode, which is also referred to as the irradiation time. Specific values of current and time can be determined by equilibrium considerations, and the ion implantation time should be more than 5 minutes in general to control the implantation amount error; since different ion implanters have different working current ranges, the ion implantation time t can be changed to make the ion beam current value I within the working current range of the ion implanter, and the time is usually controlled to be between 5 minutes and 3 hours (180min), so as to meet the final ion implantation amount.
And fifthly, implanting ions into the intrinsic region of the PIN diode according to the ion implantation depth D, the ion source voltage value V, the ion beam current value I and the ion implantation time t.
Specifically, the ion implanter is set according to the ion implantation depth D, the ion source voltage value V, the ion beam current value I and the ion implantation time t which are obtained or confirmed in the above steps as the ion source voltage, the ion beam current and the ion implantation time of the ion implanter, respectively, and then the silicon carbide PIN diode is subjected to ion implantation.
As shown in fig. 2, wherein P is a P-type region, N is an N-type region, an intrinsic I region is located between the P-type region and the N-type region, and a is an injection region; the graphical representation of the circles with arrows in the intrinsic region indicates the defect absorption.
Detailed description of the invention
The second embodiment differs from the first embodiment in that it further includes,
and sixthly, annealing the PIN diode after ion implantation, wherein the annealing temperature is 1100-1350 ℃, and the annealing time is 5-15 min. This is because the defect layer introduced by the particle implantation may be fully annealed above 1350 ℃.
The annealing temperature is generally not more than 1350 deg.c because the annealing temperature for the C vacancies of the main defects in SiC is generally 1350 deg.c above which full annealing may occur, impairing the implantation effect. And finishing the technological process of the silicon carbide PIN diode anti-displacement irradiation reinforcing method based on the deep ion implantation mode after annealing treatment.
Detailed description of the invention
The present embodiment further describes a method for reinforcing a PIN diode against displacement irradiation according to the first or second embodiment, where the ion implantation depth D is 1 to 10 μm. For current devices, the intrinsic region is typically between 1-10 μm.
Detailed description of the invention
In this embodiment, the method for reinforcing the PIN diode against displacement radiation is further described, but in the second step,
the forward characteristics of the PIN diode are: in a forward current-voltage (I-V) curve of the PIN diode, the forward voltage value is a corresponding forward current value at 0.7V;
the reverse characteristics of a PIN diode are: in a reverse current-voltage curve of the PIN diode, a reverse voltage value is a corresponding reverse current value at 200V; the change in the forward characteristics after ion implantation is typically a high change.
The switching time of the PIN diode is the time required by the on-off or off-on process of the PIN diode;
the forward characteristic variation of the PIN diode is as follows: after the PIN diode is implanted with ions, the variation of the forward current value relative to the forward current value when the ions are not implanted; the change in the reverse characteristics after ion implantation is generally a change toward high.
The reverse characteristic variation of the PIN diode is: after the PIN diode is implanted with ions, the reverse current value is changed relative to the reverse current value when the ions are not implanted; the switching time is due to the storage effect of electric charges, and the on-off of the PIN tube require a process which needs time;
the switching time variation of the PIN diode is as follows: after the PIN diode is implanted with ions, the switching time is changed relative to the switching time when the ions are not implanted; the change in switching time after ion implantation is typically a high change.
Detailed description of the invention
In this embodiment, the method for reinforcing the PIN diode against displacement radiation in the first, second or fourth embodiment is further described, and in the third step of this embodiment, the method is performed according to a formula
Calculating an ion source voltage value V; wherein C is the number of unit ion charges and is determined by the ion type. The charge state of the selected ions is not particularly limited, and may be ions of all charge numbers, i.e., the charge number of the unit ion, such as the unit Si4+The ion carries four charges, i.e., C-4.
Detailed description of the invention
The sixth embodiment is different from the fifth embodiment in that, in the fourth step, the ion beam current value I is calculated by using the following formula:
wherein q is the unit charge capacity.
Detailed description of the preferred embodiment
The present embodiment further describes a method for reinforcing a PIN diode against displacement irradiation in the first, second, fourth, or sixth embodiment, where the PIN diode is a silicon carbide PIN diode.
The silicon carbide shows strong development potential in the field of radiation resistance, and the wide forbidden band and high atomic critical displacement energy of the silicon carbide material determine that the device has strong electromagnetic wave shock resistance and high radiation damage resistance.
Detailed description of the invention
In this embodiment, the type of the ions to be implanted into the PIN diode includes at least one of carbon ions and silicon ions.
Specifically, on the premise that the PIN diode is a silicon carbide PIN diode, the type of ions selected here is silicon ions or carbon ions, which is to avoid the possible doping type and concentration variation of different atoms and to avoid lattice mismatch; the silicon ion, the carbon ion or the combination of the silicon ion and the carbon ion can be selected, the charge quantity of the unit ion of the silicon ion and the carbon ion is generally 1-4, for example, the unit Si4+The ions carry four charges.
Detailed description of the invention
The present embodiment further describes a method for reinforcing a PIN diode against displacement irradiation according to a first, second, fourth, sixth, or eighth embodiment, where in the present embodiment, the structural parameters of the PIN diode include the size, material type, density, and doping concentration of each structure; each structure includes a P-type region, an intrinsic region, and an N-type region.
Specifically, dimensions include values of length, width, and height. In a PIN diode, the structural parameters include the thickness, density, and composition of the P-type, intrinsic, and N-type regions. The intrinsic region is the I region.
The most serious influence on the non-oxidation layer type silicon carbide device in the space irradiation effect is displacement radiation damage, namely, the interaction between incident particles and target atoms causes the change of lattice atom positions of the target, thereby generating the displacement radiation effect. When the incident particles interact with the target atoms, bulk damage such as interstitial atom-vacancy pairs and related defects can be generated in the target. These interstitial atoms and vacancies interact to form more complex and stable defects that form recombination centers in the silicon carbide bulk material. Taking a silicon carbide PIN diode as an example, the radiation defect mainly causes the carriers in the intrinsic region to be captured by the radiation defect, so that the carrier concentration in the intrinsic region is greatly reduced, and simultaneously, coulomb scattering is enhanced, so that the conductivity of the intrinsic region is reduced, and the degradation of the forward characteristic is caused. It can be seen that the intrinsic region is the sensitive region of the silicon carbide PIN diode to displacement radiation damage, and its electrical performance is severely affected by displacement radiation damage. The invention effectively improves the radiation resistance of the silicon carbide PIN diode by adopting a deep ion implantation mode in the intrinsic region.
The method is adopted to carry out anti-displacement irradiation reinforcement on the silicon carbide PIN diode, and the device after reinforcement treatment is compared with the device without anti-displacement irradiation reinforcement.
As shown in FIGS. 3 to 4, the ion energy is 500keV, the ion type is carbon ion, and the ion fluence is 1e12cm-2Comparing the anti-irradiation capability before and after the treatment of the silicon carbide PIN diode, selecting a Si ion irradiation source with the dose rate of 50rad/s and the total dose of 100krad to irradiate the silicon carbide PIN diode for carrying out the anti-irradiation capability test.
Fig. 3 is a graph showing the forward performance percentage comparison broken lines of the silicon carbide PIN diode treated by the method of the present invention and the untreated silicon carbide PIN diode under different radiation absorption doses, wherein the broken line connected by the dots is the forward performance percentage broken line of the silicon carbide PIN diode treated by the method of the present invention under different radiation absorption doses, and the broken line connected by the squares is the forward performance percentage broken line of the untreated silicon carbide PIN diode under different radiation absorption doses. The ordinate in fig. 3 is the forward performance percentage (forward current at 0.7V forward voltage of the PIN diode as 100%) and the abscissa is the radiation absorbed dose (rad) of the silicon carbide PIN diode.
Fig. 4 is a graph showing normalized switching time delay comparison broken lines of the silicon carbide PIN diode treated by the method of the present invention and the untreated silicon carbide PIN diode under different radiation absorption doses, wherein the broken line connected with the round point is the normalized switching time delay broken line of the silicon carbide PIN diode treated by the method of the present invention under different radiation absorption doses, and the broken line connected with the square point is the normalized switching time delay broken line of the untreated silicon carbide PIN diode under different radiation absorption doses. In fig. 4, the ordinate is the normalized switching time delay (initial delay of 0) and the abscissa is the radiation absorption dose (rad) of the silicon carbide PIN diode. The normalized switching time is obtained by calculating the switching time of the PIN diode by adopting a general normalized calculation method.
As can be seen from fig. 3 and 4, compared with the silicon carbide PIN diode without adding the radiation-resistant reinforcement, the transistor reinforced by the method of the present invention has the displacement radiation resistance improved by about 3 times. The method for reinforcing the silicon carbide PIN diode against displacement irradiation based on the deep ion implantation mode can greatly reduce the influence of displacement irradiation defects on the performance of the device and improve the irradiation resistance of the silicon carbide PIN diode.
Claims (8)
1. The PIN diode displacement radiation-resistant reinforcement method based on the deep ion implantation mode is characterized by comprising the following specific steps:
step one, calculating an ion implantation depth D of the PIN diode and ion energy E corresponding to the ion implantation depth D through structural parameters of the PIN diode and the type of ions to be implanted into the PIN diode;
step two, calculating an ion implantation amount phi, wherein the ion implantation amount phi meets the following conditions:
injecting ions into the PIN diode according to the ion injection amount phi to ensure that
The variation of the positive and negative characteristics of the PIN diode is respectively less than 15% -25% of the positive and negative characteristics when ions are not implanted;
the switching time variation of the PIN diode is less than 15% -25% of the switching time when the ions are not injected;
step three, calculating an ion source voltage value V through the ion energy E;
step four, determining the ion implantation time t according to the ion implantation amount phi, and calculating the ion beam current value I: wherein the ion implantation time t is satisfied, and t is more than 5min and less than 180 min;
fifthly, implanting ions into the intrinsic region of the PIN diode according to the ion implantation depth D, the ion source voltage value V, the ion beam current value I and the ion implantation time t;
in the second step, the first step is carried out,
the forward characteristics of the PIN diode are: in a forward current-voltage curve of the PIN diode, a forward voltage value is a corresponding forward current value at a position of 0.7V;
the reverse characteristics of a PIN diode are: in a reverse current-voltage curve of the PIN diode, a reverse voltage value is a corresponding reverse current value at 200V;
the switching time of the PIN diode is the time required by the on-off or off-on process of the PIN diode;
the forward characteristic variation of the PIN diode is as follows: after the PIN diode is implanted with ions, the variation of the forward current value relative to the variation of the forward current value when the ions are not implanted;
the reverse characteristic variation of the PIN diode is as follows: after the PIN diode injects ions, the reverse current value is relative to the variation of the reverse current value when the ions are not injected;
the switching time variation of the PIN diode is as follows: and after the PIN diode is implanted with ions, the switching time is changed relative to the switching time when the ions are not implanted.
2. The deep ion implantation based PIN diode anti-displacement irradiation reinforcing method according to claim 1, further comprising,
and sixthly, annealing the PIN diode after ion implantation, wherein the annealing temperature is 1100-1350 ℃, and the annealing time is 5-15 min.
3. The deep ion implantation type-based PIN diode displacement radiation-resistant reinforcing method according to claim 1 or 2, wherein the ion implantation depth D is 1 μm to 10 μm.
4. The deep ion implantation type-based PIN diode displacement radiation-resistant reinforcing method according to claim 1 or 2, wherein in the third step, the deep ion implantation type PIN diode displacement radiation-resistant reinforcing method is realized by the formula
Calculating an ion source voltage value V; wherein C is the number of unit ion charges.
5. The deep ion implantation based PIN diode anti-displacement irradiation strengthening method of claim 4, wherein in the fourth step, the ion beam current value I is calculated by using the following formula:
wherein q is the unit charge capacity.
6. The deep ion implantation type-based PIN diode anti-displacement irradiation strengthening method according to claim 1, 2 or 5, wherein the PIN diode is a silicon carbide PIN diode.
7. The deep ion implantation based PIN diode irradiation hardening method of claim 6, wherein the type of the ions to be implanted into the PIN diode comprises at least one of carbon ions and silicon ions.
8. The deep ion implantation type-based PIN diode anti-displacement irradiation strengthening method of claim 1, 2, 5 or 7, wherein the structural parameters of the PIN diode comprise the size, material type, density and doping concentration of each structure; each structure includes a P-type region, an intrinsic region, and an N-type region.
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Inventor after: Liu Chaoming Inventor after: Li Heyi Inventor after: Wang Tianqi Inventor after: Zhang Yanqing Inventor after: Qi Chunhua Inventor after: Ma Guoliang Inventor after: Huo Mingxue Inventor before: Liu Chaoming Inventor before: Li Heyi Inventor before: Wang Tianqi Inventor before: Zhang Yanqing Inventor before: Qi Chunhua Inventor before: Ma Guoliang Inventor before: Huo Mingxue |
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