CN110459649B - Single crystal Si solar cell displacement-resistant irradiation method based on substrate deep layer ion implantation - Google Patents
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- 238000004088 simulation Methods 0.000 claims description 7
- 238000002513 implantation Methods 0.000 claims description 6
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- 239000010703 silicon Substances 0.000 claims description 5
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- 230000007547 defect Effects 0.000 abstract description 19
- 239000002245 particle Substances 0.000 abstract description 11
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 239000007943 implant Substances 0.000 abstract 1
- 230000003014 reinforcing effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
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- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
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- 238000002347 injection Methods 0.000 description 1
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- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
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Abstract
A single crystal Si solar cell displacement radiation resisting method based on substrate deep layer ion implantation belongs to the technical field of solar cell microelectronics. The invention aims to solve the problem that the I-V characteristic of the solar cell is degraded due to the irradiation defect of the existing solar cell caused by the irradiation of the space charged particles. Determining the position to be implanted of ions according to the structural parameters of the original single crystal Si solar cell, and simulating and determining the energy and range of the ions according to the position to be implanted; then simulating a target I-V change curve in the ion implantation process, and recording the ion implantation amount when the variation of the target I-V change curve is less than 10% of the I-V change curve of the original single crystal Si solar cell; then calculating the ion source voltage, the ion beam current and the ion implantation time of the ion implanter; and arranging an ion implanter to implant ions into the original single crystal Si solar cell and carry out annealing treatment, thereby realizing the anti-displacement irradiation reinforcement of the original single crystal Si solar cell. The method is used for reinforcing the single crystal Si solar cell.
Description
Technical Field
The invention relates to a displacement irradiation resisting method of a single crystal Si solar cell based on deep substrate ion implantation, and belongs to the technical field of solar cell microelectronics.
Background
The monocrystalline Si solar cell is a silicon-based solar cell with highest photoelectric conversion efficiency, has the advantages of low cost and light weight compared with a gallium arsenide (GaAs) solar cell with higher efficiency, and is widely applied to a low-cost small spacecraft power supply system. At present, the preparation technology of the monocrystalline silicon solar cell is basically mature, but with the rapid development of aerospace industry, the solar cell faces a more complex space service environment, which requires a space power supply system of a spacecraft to have longer service time, while the existing monocrystalline silicon solar cell cannot meet the use requirement. Since the most important environmental factor affecting the performance of the space solar cell is the irradiation environment of the space charged particles (electrons/protons with different energies), the single crystal Si solar cell needs to be further optimized for improving the irradiation resistance.
The most serious influence on the monocrystalline silicon solar cell in the space irradiation effect is displacement radiation damage. The incident particles interact with the target atoms, so that the lattice of the target atoms is changed (locally) to generate a displacement radiation effect. When the incident particles interact with the target atoms, bulk damage such as vacancies, interstitial atoms and related defects can occur in the target. These interstitial atoms and vacancies can interact again to form more complex defects. The physical processes involved are complex, and the end result is the formation of a composite center. Taking a single crystal Si solar cell as an example, the radiation defect mainly causes an effective carrier in the active region to be captured by the radiation defect, so that the effective carrier concentration in the active region is greatly reduced, the effective carrier lifetime is reduced, and the degradation of the I-V characteristic is caused. The larger the irradiation fluence of charged particles capable of generating displacement damage is, the larger the number of recombination centers formed in the single crystal Si material is, and the more serious the performance degradation is.
Therefore, in view of the above disadvantages, it is desirable to provide a method for stabilizing the internal displacement radiation defect of the solar cell in the irradiation environment of the spatially charged particles without significant change due to the increase of the radiation fluence, thereby improving the radiation resistance of the single crystal Si solar cell.
Disclosure of Invention
Aiming at the problem that the I-V characteristic of the solar cell is degraded due to the irradiation defect generated by the irradiation of the space charged particles of the conventional solar cell, the invention provides a displacement-resistant irradiation method of a single crystal Si solar cell based on the deep layer ion implantation of a substrate.
The invention discloses a displacement irradiation resisting method of a single crystal Si solar cell based on substrate deep layer ion implantation, which is characterized by comprising the following steps of:
the method comprises the following steps: determining the position to be implanted of ions according to the structural parameters of the original single crystal Si solar cell, and simulating and determining the energy and range of the ions according to the position to be implanted;
step two: implanting the ions into the original single crystal Si solar cell, simulating a target I-V change curve in the ion implantation process, and recording the ion implantation amount when the variation of the target I-V change curve is less than 10% of the I-V change curve of the original single crystal Si solar cell;
step three: calculating the ion source voltage, the ion beam current and the ion implantation time of the ion implanter according to the energy and the ion implantation amount of the ions;
step four: arranging an ion implanter, and implanting ions into the primary single crystal Si solar cell through the ion implanter;
step five: and annealing the single crystal Si solar cell after ion implantation to realize the anti-displacement irradiation reinforcement of the original single crystal Si solar cell.
According to the single crystal Si solar cell displacement radiation resisting method based on the substrate deep layer ion implantation, the structural parameters of the primary single crystal Si solar cell comprise the material, the density, the doping concentration and the thickness of each part of the primary single crystal Si solar cell.
According to the single crystal Si solar cell displacement radiation resisting method based on the substrate deep layer ion implantation, the ions are silicon ions.
According to the single crystal Si solar cell displacement radiation resisting method based on the substrate deep layer ion implantation, the calculation method of the ion source voltage V is as follows:
wherein E is the energy of the ion and C is the amount of the ion charge.
According to the single crystal Si solar cell displacement-resistant irradiation method based on the substrate deep layer ion implantation, the determination method of the ion beam current I and the ion implantation time t comprises the following steps:
wherein phi is ion implantation amount and q is unit charge and electric quantity.
According to the single crystal Si solar cell displacement radiation resisting method based on the substrate deep layer ion implantation, the ion implantation time t is more than 5 minutes.
According to the displacement irradiation resisting method of the single crystal Si solar cell based on the substrate deep layer ion implantation, in the fifth step, the annealing temperature for annealing the single crystal Si solar cell after the ion implantation is 300-400 ℃.
According to the displacement irradiation resisting method of the single crystal Si solar cell based on the substrate deep layer ion implantation, in the fifth step, the annealing time for annealing the single crystal Si solar cell after the ion implantation is carried out is 0.5 minute to 1 minute.
According to the single crystal Si solar cell displacement radiation resisting method based on the substrate deep layer ion implantation, the determination of the energy and the range of ions in the step one is realized through simulation of SRIM software.
According to the displacement irradiation resisting method of the single crystal Si solar cell based on the substrate deep layer ion implantation, the simulation process in the second step is realized through TCAD software simulation.
The invention has the beneficial effects that: the method artificially introduces the defect trap into the solar cell by injecting ions into the deep layer of the base region substrate of the single crystal Si solar cell, can generate a composite action on the defect caused by displacement radiation, ensures that the internal displacement radiation defect can be kept stable after the solar cell is irradiated by space charged particles, and cannot be obviously changed due to the increase of radiation fluence, thereby improving the anti-irradiation capability of the single crystal Si solar cell and keeping the stability of the I-V characteristic of the solar cell.
Experiments prove that compared with the existing single crystal Si solar cell, the single crystal Si solar cell processed by the method has the advantage that the irradiation resistance can be improved by about 3-4 times.
Drawings
FIG. 1 is an exemplary flow chart of the method for preventing displacement irradiation of a single crystal Si solar cell based on deep substrate ion implantation according to the present invention;
FIG. 2 is a schematic diagram of deep ion implantation into an original single crystal Si solar cell; in the drawings, 1 denotes an electrode, 2 denotes an active region, and 3 denotes a substrate; the downward arrows indicate ion implantation;
fig. 3 is a graph comparing the radiation resistance of single crystal Si solar cell samples without ion implantation and after deep ion implantation.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.
The invention is further described with reference to the following drawings and specific examples, which are not intended to be limiting.
In a first embodiment, referring to fig. 1 and 2, the present invention provides a method for anti-displacement irradiation of a single crystal Si solar cell based on deep layer ion implantation of a substrate, comprising the following steps:
the method comprises the following steps: determining the position to be implanted of ions according to the structural parameters of the original single crystal Si solar cell, and simulating and determining the energy and range of the ions according to the position to be implanted;
step two: implanting the ions into the original single crystal Si solar cell, simulating a target I-V change curve in the ion implantation process, and recording the ion implantation amount when the variation of the target I-V change curve is less than 10% of the I-V change curve of the original single crystal Si solar cell;
step three: calculating the ion source voltage, the ion beam current and the ion implantation time of the ion implanter according to the energy and the ion implantation amount of the ions;
step four: arranging an ion implanter, and implanting ions into the primary single crystal Si solar cell through the ion implanter;
step five: and annealing the single crystal Si solar cell after ion implantation to realize the anti-displacement irradiation reinforcement of the original single crystal Si solar cell.
In the first step of the embodiment, the position to be implanted of the ion comprises the implantation depth and the direction of the ion, and after the implantation position is determined according to the structural parameters, the energy and the range of the ion to be implanted can be determined by adopting corresponding software simulation; in the second step, in the process of injecting ions into the original single crystal Si solar cell, along with the change of the ion injection amount, simulating the variable quantity of a target I-V change curve in real time according to the energy and the range of the ions, wherein the variable quantity of the selected I-V curve is less than 10 percent, so as to avoid causing too large influence on the output electrical property of the solar cell; in the third step, after the energy and the ion implantation amount of the ions are determined, the corresponding ion implanter can be set, and then the ion implantation process is implemented, so that the displacement irradiation resistance of the original single crystal Si solar cell can be improved, and the performance reinforcement of the original single crystal Si solar cell is realized.
In the method, the defect trap is artificially introduced in a certain depth range of the base substrate of the single crystal Si solar cell, for example, the thickness of 10nm-20nm away from the interface of the active region of the cell, and the defect caused by displacement radiation can be compounded by ion implantation, so that the displacement radiation defect in the solar cell is kept stable and is not obviously changed due to the increase of the radiation fluence, and the irradiation resistance of the single crystal Si solar cell is improved. Therefore, the method is beneficial to improving the displacement irradiation resistance of the single crystal Si solar cell.
Further, as shown in fig. 2, the structural parameters of the primary single crystal Si solar cell include material, density, doping concentration and thickness of each part of the primary single crystal Si solar cell.
The structure of a common single crystal Si solar cell comprises a substrate, an active region and an electrode, wherein ions need to be implanted into the substrate layer, and the distance between the substrate layer and the interface of the active region is 10-20nm, so that the probability of trapping carriers by defects introduced by ion implantation can be increased.
As an example, the ions are silicon ions. Silicon ions are implanted into the single crystal Si solar cell, so that defects are only introduced, the doping type and concentration in the original single crystal Si solar cell are prevented from being changed after the ions are implanted, and the property of a substrate material is not changed.
Further, the method for calculating the ion source voltage V comprises the following steps:
wherein E is the energy of the ion and the unit is eV; c is the ionic charge amount.
Still further, the method for determining the ion beam current I and the ion implantation time t comprises the following steps:
wherein phi is ion implantation amount and q is unit charge and electric quantity. The ion implantation time t is the irradiation time, i.e. the running time of the ion implanter.
The determination of the ion beam current I and the ion implantation time t may be determined by balancing considerations to determine specific values.
Still further, the ion implantation time t is greater than 5 minutes. Generally, the ion implantation time should be longer than 5 minutes to avoid the implantation amount error caused by the experimental operation time, so as to control the ion implantation error amount to be less than 1% of the total implantation amount.
And further, in the fifth step, the annealing temperature for annealing the single crystal Si solar cell after ion implantation is 300-400 ℃, and the stress removal and recrystallization effects are optimal in the temperature range.
And further, in the fifth step, the annealing time for annealing the single crystal Si solar cell after ion implantation is 0.5 to 1 minute, so that the recrystallization effect of the substrate material after ion implantation can be achieved, and the thermal effect generated by the annealing treatment is not enough to influence other functional structures.
As an example, the determination of the energy and range of the ions in step one is achieved by SRIM software simulation. The SRIM software, known as The Stopping and Range of ion in Matter, is compiled by James Ziegler and is a common international simulation software for particle-material interaction. The software is open source software, i.e., public source code. The function of the method is to simulate the motion and the action mode of the particles in the material, and the energy loss, the range, the collision cross section and other information of the particles in the material can be calculated.
As an example, the simulation process in step two is implemented by TCAD software simulation. The TCAD software, collectively referred to as Technology Computer aid Design, semiconductor process simulation and device simulation tools, is distributed by Silvaco, USA. The function is to simulate the electrical property and the internal state of the device by setting the parameters of the structure, the processing technology, the external conditions and the like of the device.
The single crystal Si solar cell after annealing treatment of the invention realizes the reinforcement of displacement radiation resistance.
The working principle of the invention is as follows:
the spatially charged particles can cause a variety of radiation damage within the solar cell, with the displacement radiation damage having the most severe impact on its output electrical performance. The displacement radiation damage can generate defects such as vacancies, interstitial atoms and the like in the solar cell, thereby seriously affecting the performance parameters of the solar cell. The displacement radiation defect mainly causes the carriers of the active region of the single crystal Si solar cell to be captured by the radiation defect, so that the carrier concentration of the active region is greatly reduced, the conductivity of the active region is reduced, and the degradation of the forward characteristic is caused. Therefore, the active region is a sensitive region of the single crystal Si solar cell to displacement radiation damage, and is severely affected by the displacement radiation damage. The invention effectively improves the anti-irradiation capability of the single crystal Si solar cell by adopting a mode of deep ion implantation in the substrate.
The method of the invention is adopted to carry out anti-displacement irradiation reinforcement on the single crystal Si solar cell, and the reinforced device and the single crystal Si solar cell which is not subjected to anti-displacement irradiation reinforcement are irradiated and compared at the same time, as shown in figure 3. In the experiment, an Si ion irradiation source is selected, the dose rate is 1rad/s, the total dose is 100krad, 100krad is selected, and the I-V characteristic variation normalization result (forward current at the forward voltage of 1V) of the single crystal Si solar cell is used as the criterion of the radiation resistance. As can be seen from fig. 3, the transistor reinforced by the method of the present invention has an improvement of about 3.42 times in the anti-displacement irradiation capability compared to the single crystal Si solar cell without the addition of the anti-irradiation reinforcement. Therefore, the method can greatly reduce the influence of the displacement radiation defect on the performance of the solar cell and improve the radiation resistance of the single crystal Si solar cell.
The invention adopts the prior SRIM software and TCAD software to simulate the performance of the single crystal Si solar cell, effectively shortens the time and the procedure for determining the parameters and can quickly determine the parameters required by ion implantation.
The method can be used for carrying out irradiation resistance reinforcement on the existing single crystal Si solar cell, can also be carried out in the production process of the single crystal Si solar cell, directly produces the single crystal Si solar cell with displacement irradiation resistance, can optimize the irradiation resistance of the single crystal Si solar cell, and is an important displacement irradiation resistance reinforcement technology.
In conclusion, the single crystal Si solar cell processed by the method effectively realizes displacement irradiation reinforcement and has more reliable displacement irradiation damage resistance.
Although the invention herein has been described with reference to particular embodiments, it is to be understood that these embodiments are merely illustrative of the principles and applications of the present invention. It is therefore to be understood that numerous modifications may be made to the illustrative embodiments and that other arrangements may be devised without departing from the spirit and scope of the present invention as defined by the appended claims. It should be understood that features described in different dependent claims and herein may be combined in ways different from those described in the original claims. It is also to be understood that features described in connection with individual embodiments may be used in other described embodiments.
Claims (9)
1. A displacement irradiation resisting method of a single crystal Si solar cell based on substrate deep layer ion implantation is characterized by comprising the following steps:
the method comprises the following steps: determining the position to be implanted of ions according to the structural parameters of the original single crystal Si solar cell, and simulating and determining the energy and range of the ions according to the position to be implanted;
step two: implanting the ions into the original single crystal Si solar cell, simulating a target I-V change curve in the ion implantation process, and recording the ion implantation amount when the variation of the target I-V change curve is less than 10% of the I-V change curve of the original single crystal Si solar cell;
step three: calculating the ion source voltage, the ion beam current and the ion implantation time of the ion implanter according to the energy and the ion implantation amount of the ions;
step four: arranging an ion implanter, and implanting ions into the primary single crystal Si solar cell through the ion implanter;
step five: annealing the single crystal Si solar cell after ion implantation to realize the anti-displacement irradiation reinforcement of the original single crystal Si solar cell;
the position of the ion to be implanted comprises the implantation depth and the orientation of the ion, and the implantation depth comprises the thickness within 10nm-20nm from the active region interface in the base region substrate;
the ions are silicon ions.
2. The method of claim 1, wherein the structural parameters of the primary single crystal Si solar cell include material, density, doping concentration and thickness of each part of the primary single crystal Si solar cell.
3. The method for preventing the displacement irradiation of the single crystal Si solar cell based on the deep layer ion implantation of the substrate according to claim 1, wherein the method for calculating the ion source voltage V is as follows:
wherein E is the energy of the ion and C is the amount of the ion charge.
4. The method for preventing the displacement irradiation of the single crystal Si solar cell based on the deep layer ion implantation of the substrate according to claim 3, wherein the method for determining the ion beam current I and the ion implantation time t comprises the following steps:
wherein phi is ion implantation amount and q is unit charge and electric quantity.
5. The method of claim 4, wherein the ion implantation time t is greater than 5 minutes.
6. The method for resisting displacement irradiation of the single crystal Si solar cell based on the deep layer ion implantation of the substrate according to claim 5, wherein the annealing temperature for annealing the single crystal Si solar cell after the ion implantation in the fifth step is 300-400 ℃.
7. The method for resisting displacement irradiation of the single crystal Si solar cell based on the deep layer ion implantation of the substrate as claimed in claim 6, wherein the annealing time for annealing the single crystal Si solar cell after the ion implantation in the step five is 0.5 minutes to 1 minute.
8. The method of claim 1, wherein the determination of the energy and range of the ions in step one is performed by simulation with SRIM software.
9. The single crystal Si solar cell displacement radiation resistance method based on the substrate deep layer ion implantation as claimed in claim 1, wherein the simulation process in the second step is realized by TCAD software simulation.
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