CN110473787B - Deep ion implantation-based gallium oxide Schottky diode displacement-resistant irradiation method - Google Patents
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- 238000005468 ion implantation Methods 0.000 title claims abstract description 72
- 238000006073 displacement reaction Methods 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims abstract description 52
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 title claims abstract description 26
- 229910001195 gallium oxide Inorganic materials 0.000 title claims abstract description 26
- 150000002500 ions Chemical group 0.000 claims abstract description 63
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims abstract description 48
- 230000005855 radiation Effects 0.000 claims abstract description 42
- 230000008859 change Effects 0.000 claims abstract description 17
- 238000000137 annealing Methods 0.000 claims abstract description 15
- 238000004088 simulation Methods 0.000 claims abstract description 11
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 8
- -1 gallium ions Chemical class 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 9
- 238000002513 implantation Methods 0.000 claims description 7
- 238000002347 injection Methods 0.000 claims description 7
- 239000007924 injection Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 239000002245 particle Substances 0.000 abstract description 10
- 230000015556 catabolic process Effects 0.000 abstract description 5
- 238000006731 degradation reaction Methods 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 4
- 230000003014 reinforcing effect Effects 0.000 abstract description 2
- 230000007547 defect Effects 0.000 description 18
- 230000002787 reinforcement Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- CKHJYUSOUQDYEN-UHFFFAOYSA-N gallium(3+) Chemical compound [Ga+3] CKHJYUSOUQDYEN-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
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Abstract
A gallium oxide Schottky diode displacement radiation resisting method based on deep ion implantation belongs to diode micro-electricityThe technical field of the technology. The invention aims to solve the problems that the conventional gallium oxide Schottky diode has poor anti-displacement irradiation capability in a charged particle irradiation environment and is easy to cause degradation of forward and reverse characteristics of the conventional gallium oxide Schottky diode. It is based on the original Ga2O3Determining the position of ions to be implanted by the structural parameters of the Schottky diode, and simulating and determining the energy and range of the ions; re-simulation to obtain Ga after ion implantation2O3The forward and reverse target characteristic change curves of the Schottky diode are recorded, and the variation of the target characteristic change curves is less than that of the original Ga2O3Ion implantation amount of the Schottky diode when the forward and reverse characteristic change curve is 10%; then calculating the ion source voltage, the ion beam current and the ion implantation time of the ion implanter; setting an ion implanter to the original Ga2O3And performing ion implantation and annealing treatment on the Schottky diode. The method is used for reinforcing the gallium oxide Schottky diode.
Description
Technical Field
The invention relates to a deep ion implantation-based displacement irradiation resisting method for a gallium oxide Schottky diode, and belongs to the technical field of diode microelectronics.
Background
The search for a novel semiconductor material which can meet the requirements of strong rays of aerospace, nuclear reactors and the like and work in severe environments with high temperature and has unique physical properties and electrical properties has becomeIs a new hotspot in the semiconductor field. In recent years, gallium oxide (Ga), one of the third generation semiconductor materials2O3) The development is rapid, and the method becomes one of the research hotspots in the field of radiation resistance. Ga2O3The wide forbidden band and high critical atomic displacement energy of the material determine that the device has strong capability of resisting electromagnetic wave impact and high radiation damage. If Ga is present2O3The structural parameters of the device can be further optimized, and the radiation resistance of the device is expected to be improved.
To Ga in the effect of space irradiation2O3The most serious of the device effects is displacement radiation damage. The incident particles interact with the target atoms, so that the lattice of the target atoms is changed (locally) to generate a displacement radiation effect. When the incident particles interact with the target atoms, bulk damage such as vacancies, interstitial atoms and related defects can occur in the target. These interstitial atoms and vacancies can interact again to form more complex defects. The physical processes involved are complex, and the end result is the formation of a composite center. With Ga2O3For example, in a schottky diode, radiation defects mainly cause carriers in an active region to be captured by the radiation defects, so that the carrier concentration of the active region is greatly reduced, and the conductivity of the active region is reduced, thereby causing degradation of forward and reverse characteristics. The larger the irradiation fluence of charged particles capable of generating displacement damage, the higher the Ga content2O3The greater the number of recombination centers formed in the material, the more severe the resulting performance degradation.
Therefore, in view of the above disadvantages, it is desirable to provide a method for improving the displacement radiation resistance of the gan schottky diode by stabilizing the displacement radiation defects inside the gan schottky diode in the space charged particle irradiation environment without significant change due to the increase of the radiation fluence.
Disclosure of Invention
The invention provides a deep ion injection-based gallium oxide Schottky diode anti-displacement irradiation method, aiming at the problems that the existing gallium oxide Schottky diode is poor in anti-displacement irradiation capability in a charged particle irradiation environment and is easy to cause degradation of forward and reverse characteristics of the existing gallium oxide Schottky diode.
The invention relates to a deep ion implantation-based displacement irradiation resisting method for a gallium oxide Schottky diode, which comprises the following steps of:
the method comprises the following steps: according to the original Ga2O3Determining the position of ions to be implanted according to the structural parameters of the Schottky diode, and determining the energy and the range of the ions according to the position of the ions to be implanted in a simulation mode;
step two: simulating the implantation of said ions into the original Ga2O3The position of Schottky diode to be injected and Ga2O3The forward and reverse target characteristic change curves of the Schottky diode are recorded, and the variation of the target characteristic change curves is less than that of the original Ga2O3Ion implantation amount of the Schottky diode when the forward and reverse characteristic change curve is 10%;
step three: calculating the ion source voltage, the ion beam current and the ion implantation time of the ion implanter according to the energy and the ion implantation amount of the ions;
step four: arranging an ion implanter and aligning the original Ga by the ion implanter2O3Performing ion implantation on the Schottky diode;
step five: for Ga completing ion implantation2O3Annealing treatment is carried out on the Schottky diode to realize the original Ga2O3And the displacement radiation resistance of the Schottky diode is strengthened.
According to the deep ion implantation-based gallium oxide Schottky diode displacement irradiation resisting method, the original Ga2O3The structural parameters of the Schottky diode comprise original Ga2O3The material, density, doping concentration and thickness of each part of the schottky diode.
According to the deep ion implantation-based gallium oxide Schottky diode displacement irradiation resisting method, the ions are gallium ions or oxygen ions.
According to the deep ion implantation-based gallium oxide Schottky diode displacement irradiation resisting method, the calculation method of the ion source voltage V is as follows:
wherein E is the energy of the ion and C is the amount of the ion charge.
According to the deep ion implantation-based gallium oxide Schottky diode displacement irradiation resisting method, the method for determining the ion beam current I and the ion implantation time t comprises the following steps:
wherein phi is ion implantation amount and q is unit charge and electric quantity.
According to the deep ion implantation-based gallium oxide Schottky diode displacement irradiation resisting method, the ion implantation time t is more than 5 minutes.
According to the deep ion implantation-based gallium oxide Schottky diode displacement irradiation resisting method, in the fifth step, Ga subjected to ion implantation is irradiated2O3The annealing temperature of the Schottky diode for annealing treatment is 550-1000 ℃.
According to the deep ion implantation-based gallium oxide Schottky diode displacement irradiation resisting method, in the fifth step, Ga subjected to ion implantation is irradiated2O3The annealing time of the schottky diode is 0.5 to 1 minute.
According to the deep ion implantation-based gallium oxide Schottky diode displacement irradiation resisting method, in the first step, the energy and the range of the ions are determined and realized through simulation of SRIM software.
According to the deep ion implantation-based gallium oxide Schottky diode displacement irradiation resisting method, the simulation process in the second step is realized through TCAD software.
The invention has the beneficial effects that: the method of the invention adopts a deep ion implantation mode to carry out Ga2O3Depth range inside active region of Schottky diodeThe defect trap is artificially introduced into the enclosure, and can generate a composite action on defects caused by displacement radiation, so that the internal displacement radiation defects are kept stable after the diode device is irradiated by the space charged particles, and the defects can not be obviously changed due to the increase of radiation fluence, thereby improving the Ga content2O3The radiation resistance of the Schottky diode can maintain Ga2O3The forward and reverse characteristics of the Schottky diode are stable.
Proved by experiments, the Ga treated by the method of the invention2O3Schottky diode and conventional Ga2O3Compared with a Schottky diode, the radiation resistance can be improved by about 2-4 times.
Drawings
Fig. 1 is an exemplary flow chart of a deep ion implantation based displacement irradiation resistant method for a gan schottky diode according to the present invention;
FIG. 2 shows the conversion of Ga to Ga2O3A schematic diagram of ion implantation of the Schottky diode; in the figure, 1 represents an electrode, the part below the electrode is an active area, and downward arrows indicate ion implantation to the active area;
FIG. 3 is Ga2O3A comparison graph of the radiation resistance of the Schottky diode device after no ion implantation and deep ion implantation.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.
The invention is further described with reference to the following drawings and specific examples, which are not intended to be limiting.
In a first embodiment, as shown in fig. 1 and 2, the present invention provides a deep ion implantation-based anti-displacement irradiation method for a gan schottky diode, including the following steps:
the method comprises the following steps: according to the original Ga2O3Determining the position of ions to be implanted according to the structural parameters of the Schottky diode, and determining the energy and the range of the ions according to the position of the ions to be implanted in a simulation mode;
step two: simulating the implantation of said ions into the original Ga2O3The position of Schottky diode to be injected and Ga2O3The forward and reverse target characteristic change curves of the Schottky diode are recorded, and the variation of the target characteristic change curves is less than that of the original Ga2O3Ion implantation amount of the Schottky diode when the forward and reverse characteristic change curve is 10%;
step three: calculating the ion source voltage, the ion beam current and the ion implantation time of the ion implanter according to the energy and the ion implantation amount of the ions;
step four: arranging an ion implanter and aligning the original Ga by the ion implanter2O3Performing ion implantation on the Schottky diode;
step five: for Ga completing ion implantation2O3Annealing treatment is carried out on the Schottky diode to realize the original Ga2O3And the displacement radiation resistance of the Schottky diode is strengthened.
In the first step of the embodiment, the position to be implanted of the ion comprises the implantation depth and the direction of the ion, and after the implantation position is determined according to the structural parameters, the energy and the range of the required ion to be implanted can be determined by adopting corresponding software simulation; in the second step, in the presence of orthogallium2O3In the process of injecting ions into the Schottky diode, along with the change of the injection amount of the ions, a target characteristic change curve is simulated in real time according to the energy and the range of the ions, and the variable quantity of the target characteristic change curve is selected to be less than 10 percent so as to avoid Ga2O3The output electrical performance of the schottky diode is too much affected; in the third step, after determining the energy and the ion implantation amount of the ions, the corresponding ion implanter can be drivenAnd setting the column to further implement an ion implantation process. For Ga2O3The ion injection of the Schottky diode can improve the displacement radiation resistance of the Schottky diode, thereby realizing the original Ga2O3The performance of the schottky diode is enhanced.
In the process of the present invention, in Ga2O3In a certain depth range of an active region of the Schottky diode, for example, within a thickness of 5nm-8nm from an interface of the active region and an electrode, a defect trap is artificially introduced in an ion injection mode, so that a composite effect can be generated on defects caused by displacement radiation, the displacement radiation defects in the diode device are kept stable and are not obviously changed due to the increase of radiation fluence, and the Ga content is improved2O3Radiation resistance of the schottky diode. Therefore, the method of the present invention is advantageous for increasing Ga2O3And the Schottky diode has displacement irradiation resistance.
Further, as shown in FIG. 2, the crude Ga2O3The structural parameters of the Schottky diode comprise original Ga2O3The material, density, doping concentration and thickness of each part of the schottky diode.
Usually Ga2O3The Schottky diode structure comprises an active region and an electrode 1, ions need to be injected into the active region, and the injection position can be selected to be in a range of 5-8nm deep into the active region, so that the probability of trapping carriers by defects introduced by ion injection is increased.
As an example, the ion is a gallium ion or an oxygen ion. To Ga2O3Injecting gallium ions or oxygen ions into the Schottky diode can ensure that defects are only introduced into the device, and the original Ga is prevented from being changed after the ions are injected2O3The doping type and concentration inside the Schottky diode device do not change the material property of the active region. In the implementation of the radiation reinforcement of the gallium oxide schottky diode against displacement, only oxygen ions or only gallium ions can be implanted according to actual needs, or both oxygen ions and gallium ions can be implanted according to the sequence.
Further, the method for calculating the ion source voltage V comprises the following steps:
wherein E is the energy of the ion and the unit is eV; c is the ionic charge amount.
Still further, the method for determining the ion beam current I and the ion implantation time t comprises the following steps:
wherein phi is ion implantation amount and q is unit charge and electric quantity. The ion implantation time t is the irradiation time, i.e. the running time of the ion implanter.
The determination of the ion beam current I and the ion implantation time t may be determined by balancing considerations to determine specific values.
Still further, the ion implantation time t is greater than 5 minutes. Generally, the ion implantation time should be longer than 5 minutes to avoid the implantation amount error caused by the experimental operation time, so as to control the ion implantation error amount to be less than 1% of the total implantation amount.
Further, in the fifth step, Ga subjected to ion implantation is subjected to ion implantation2O3The annealing temperature of the Schottky diode for annealing treatment is 550-1000 ℃, and the stress removal and recrystallization effects are optimal in the temperature range.
Further, in the fifth step, Ga subjected to ion implantation is subjected to ion implantation2O3The annealing time of the Schottky diode for annealing treatment is 0.5-1 minute, so that the effect of recrystallization of the active region material after ion implantation can be achieved, and the heat effect generated by the annealing treatment is not enough to influence other functional structures.
As an example, the determination of the energy and range of the ions in step one is achieved by SRIM software simulation. The SRIM software, known as The Stopping and Range of ion in Matter, is compiled by James Ziegler and is a common international simulation software for particle-material interaction. The software is open source software, i.e., public source code. The function of the method is to simulate the motion and the action mode of the particles in the material, and the energy loss, the range, the collision cross section and other information of the particles in the material can be calculated.
As an example, the simulation process in step two is implemented by TCAD software. The TCAD software, collectively referred to as Technology Computer aid Design, semiconductor process simulation and device simulation tools, is distributed by Silvaco, USA. The function is to simulate the electrical property and the internal state of the device by setting the parameters of the structure, the processing technology, the external conditions and the like of the device.
Ga annealed by the invention2O3The Schottky diode realizes the reinforcement of displacement radiation resistance.
The working principle of the invention is as follows:
spatially charged particles can cause a variety of radiation damage within the device, the most severe of which is displacement radiation damage. The displacement radiation damage can generate defects such as vacancies, interstitial atoms and the like in the device, thereby seriously affecting the performance parameters of the device. Dislocation radiation defects are mainly responsible for Ga2O3Carriers in the active region of the schottky diode are captured by the radiation defects, so that the carrier concentration of the active region is greatly reduced, the conductivity of the active region is reduced, and the degradation of forward and reverse characteristics is caused. Thus, the active region is Ga2O3The sensitive area of the schottky diode, which is damaged by displacement radiation, is severely affected by the displacement radiation damage. The invention effectively improves Ga by adopting a mode of deep ion implantation in an active region2O3Radiation resistance of the schottky diode.
By using the method of the invention to treat Ga2O3The Schottky diode is subjected to anti-displacement irradiation reinforcement, and the reinforced device and the Ga which is not subjected to anti-displacement irradiation reinforcement are subjected to anti-displacement irradiation reinforcement2O3The schottky diodes were simultaneously irradiated for comparison as shown in fig. 3. The experiment selects Ga/O ion irradiation source with dose rate of 1rad/s and total dose of 100krad, and selects 100krad position, Ga2O3Normalization of the variation of the forward characteristic of the schottky diode (positive at a forward voltage of 1V)Directional current) as a criterion for radiation resistance. As can be seen, the same applies to Ga without added radiation resistance reinforcement2O3Compared with a Schottky diode, the displacement irradiation resistance of the transistor reinforced by the method is improved by about 3.2 times. Therefore, the method can greatly reduce the influence of displacement radiation defects on the performance of the device and improve Ga2O3Radiation resistance of the schottky diode.
The invention adopts the prior SRIM software and TCAD software to process Ga2O3The Schottky diode is used for performance simulation, so that the parameter determination time and procedure are effectively shortened, and the parameters required by ion implantation can be rapidly determined.
The Ga layer of the present invention based on deep ion implantation2O3The method for reinforcing the displacement-resistant irradiation of the Schottky diode can be used for the existing Ga2O3The Schottky diode is used for carrying out irradiation resistance reinforcement and can also be used in Ga2O3The production process of the Schottky diode is carried out, and Ga with displacement irradiation resistance is directly produced2O3A schottky diode. The method of the invention optimizes Ga2O3The radiation resistance of the Schottky diode is an important anti-displacement radiation reinforcement technology.
In summary, Ga processed by the method of the invention2O3The Schottky diode effectively realizes the reinforcement of displacement radiation resistance and has more reliable displacement radiation damage resistance.
Although the invention herein has been described with reference to particular embodiments, it is to be understood that these embodiments are merely illustrative of the principles and applications of the present invention. It is therefore to be understood that numerous modifications may be made to the illustrative embodiments and that other arrangements may be devised without departing from the spirit and scope of the present invention as defined by the appended claims. It should be understood that features described in different dependent claims and herein may be combined in ways different from those described in the original claims. It is also to be understood that features described in connection with individual embodiments may be used in other described embodiments.
Claims (4)
1. A deep ion implantation-based gallium oxide Schottky diode displacement irradiation resisting method is characterized by comprising the following steps:
the method comprises the following steps: according to the original Ga2O3Determining the position of ions to be implanted according to the structural parameters of the Schottky diode, and determining the energy and the range of the ions according to the position of the ions to be implanted in a simulation mode;
step two: simulating the implantation of said ions into the original Ga2O3The position of Schottky diode to be injected and Ga2O3The forward and reverse target characteristic change curves of the Schottky diode are recorded, and the variation of the target characteristic change curves is less than that of the original Ga2O3Ion implantation amount of the Schottky diode when the forward and reverse characteristic change curve is 10%;
step three: calculating the ion source voltage, the ion beam current and the ion implantation time of the ion implanter according to the energy and the ion implantation amount of the ions;
step four: arranging an ion implanter and aligning the original Ga by the ion implanter2O3Performing ion implantation on the Schottky diode;
step five: for Ga completing ion implantation2O3Annealing treatment is carried out on the Schottky diode to realize the original Ga2O3The displacement radiation resistance of the Schottky diode is strengthened;
the ion implantation into Ga2O3The injection position of the Schottky diode active region is 5-8nm deep into the active region from an electrode interface;
the ions are gallium ions and oxygen ions or are implanted with the oxygen ions and the gallium ions according to the sequence;
the original Ga2O3The structural parameters of the Schottky diode comprise original Ga2O3The material, density, doping concentration and thickness of each part of the Schottky diode;
the method for calculating the ion source voltage V comprises the following steps:
wherein E is the energy of the ion and C is the amount of the ion charge;
the method for determining the ion beam current I and the ion implantation time t comprises the following steps:
in the formula, phi is ion implantation amount, and q is unit charge and electric quantity;
the ion implantation time t is more than 5 minutes;
in the fifth step, Ga with ion implantation completed2O3The annealing temperature of the Schottky diode for annealing treatment is 550-1000 ℃.
2. The deep ion implantation-based gallium oxide schottky diode displacement radiation resisting method of claim 1, wherein the Ga subjected to ion implantation in the fifth step2O3The annealing time of the schottky diode is 0.5 to 1 minute.
3. The deep ion implantation-based gallium oxide schottky diode displacement radiation resistance method of claim 1, wherein the determination of the energy and range of the ions in step one is performed by SRIM software simulation.
4. The deep ion implantation-based gallium oxide schottky diode displacement radiation resisting method according to claim 1, wherein the simulation process in the second step is realized by TCAD software.
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