CN109860033B - Schottky diode displacement-resistant irradiation strengthening method based on deep ion implantation mode - Google Patents
Schottky diode displacement-resistant irradiation strengthening method based on deep ion implantation mode Download PDFInfo
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- CN109860033B CN109860033B CN201910110228.9A CN201910110228A CN109860033B CN 109860033 B CN109860033 B CN 109860033B CN 201910110228 A CN201910110228 A CN 201910110228A CN 109860033 B CN109860033 B CN 109860033B
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Abstract
The invention discloses a Schottky diode displacement-resistant irradiation strengthening method based on a deep ion implantation mode, relates to the field of manufacturing or processing of semiconductor devices, and aims to solve the problem that forward characteristics are degraded due to the defect of a Schottky diode caused by displacement radiation. The invention has the beneficial effects that: the invention artificially introduces the defect trap in a certain depth range in the Schottky diode by means of deep ion implantation, can generate composite action on defects caused by displacement radiation, enables the displacement radiation defects in the device to be stable, and does not change obviously due to the increase of radiation fluence, thereby improving the radiation resistance of the Schottky diode.
Description
Technical Field
The invention relates to the field of semiconductor devices, in particular to a method for processing a Schottky diode by adopting an ion implantation mode.
Background
The most serious influence on the semiconductor device in the space irradiation effect is displacement radiation damage, and the displacement radiation effect is generated by interaction of incident particles and target atoms, so that the lattice change (local) of the target atom lattice is generated. In particular, when the incident particles interact with the target atoms, bulk damage such as vacancies, interstitial atoms, and related defects may be generated in the target. These interstitial atoms and vacancies can interact again to form more complex defects. The physical processes involved are complex, with the end result being the formation of a composite center.
Taking a schottky diode as an example, the radiation defect mainly causes the carriers in the active region to be captured by the radiation defect, so that the carrier concentration of the active region is greatly reduced, the conductivity of the active region is reduced, and the degradation of the forward characteristic is caused.
In summary, the larger the fluence of charged particles that can produce displacement damage, the greater the number of recombination centers formed in the material of the schottky diode, and the more severe the resulting performance degradation.
Disclosure of Invention
The invention aims to solve the problem that forward characteristics are degraded due to the defect caused by displacement radiation of a Schottky diode, and provides a Schottky diode displacement radiation resisting reinforcement method based on a deep ion implantation mode.
The invention discloses a Schottky diode displacement radiation resisting reinforcement method based on a deep ion implantation mode, which comprises the following specific steps of:
determining the type and the implantation depth D of ions to be implanted into the Schottky diode according to the structural parameters of the Schottky diode, and calculating the voltage value V of an ion source;
step two, calculating an ion implantation amount phi, wherein the ion implantation amount phi meets the following conditions:
after ions are injected into the Schottky diode according to the ion injection amount phi, the variation of the forward and reverse characteristics of the Schottky diode can be respectively smaller than 5% -15% of the forward and reverse characteristics when the ions are not injected;
step three, determining ion implantation time t according to the ion implantation amount phi, and calculating an ion beam current value I: wherein the ion implantation time t is more than or equal to 5 min;
and step four, implanting ions into the active region of the Schottky diode according to the ion source voltage value V, the ion beam current value I, the ion implantation depth D and the ion implantation time t.
The invention has the beneficial effects that:
according to the method, the defect trap is artificially introduced in a certain depth range inside the Schottky diode through the ion implantation mode in a deep ion implantation mode, so that the defect caused by displacement radiation can be subjected to a composite action, the displacement radiation defect inside the device is kept stable, and the defect is not obviously changed due to the increase of the radiation fluence, so that the anti-irradiation capability of the Schottky diode is improved, and the anti-irradiation capability is improved by about 2-4 times compared with that of the Schottky diode which is not treated by the method for strengthening the anti-displacement irradiation of the Schottky diode.
The method can be used for carrying out irradiation resistance reinforcement on the conventional Schottky diode and can also be carried out in the production process of the Schottky diode, the Schottky diode with displacement irradiation resistance can be directly produced, the irradiation resistance of the Schottky diode is optimized, and the method is an important displacement irradiation resistance reinforcement technology.
Drawings
FIG. 1 is a flow chart of a Schottky diode displacement radiation hardening method of the present invention;
fig. 2 is a schematic diagram illustrating ion implantation performed on an active region of a schottky diode in the schottky diode anti-displacement irradiation strengthening method of the present invention; in fig. 2, a is a metal electrode, b is an active region, and the direction of the arrow is the direction of ion implantation;
FIG. 3 is a graphical comparison of the radiation resistance of a seventh embodiment silicon carbide Schottky diode and an eighth embodiment silicon carbide Schottky diode;
in fig. 3, the abscissa is the absorption dose of the sic schottky diode to radiation, and the ordinate is the normalized result of the variation of the forward characteristic of the sic schottky diode; the broken lines connected by the square points represent the radiation resistance of the silicon carbide schottky diode which is not treated by the schottky diode displacement radiation resistance strengthening method, and the broken lines connected by the round points represent the radiation resistance of the silicon carbide schottky diode which is treated by the schottky diode displacement radiation resistance strengthening method.
Detailed Description
Detailed description of the invention
The invention adopts the prior SRIM software and TCAD software to perform performance simulation on the Schottky diode, effectively shortens the time and procedure for determining parameters and can quickly determine the parameters required by ion implantation.
The invention discloses a Schottky diode displacement radiation resisting reinforcement method based on a deep ion implantation mode, which comprises the following specific steps of:
step one, determining the type and the depth D of ion implantation to be implanted into the Schottky diode according to the structural parameters of the Schottky diode, and calculating the voltage value V (unit is V) of an ion source;
in the invention, the ion energy E is calculated firstly, and the ion source voltage value V, namely the voltage value selected by the ion implanter for ion implantation of the Schottky diode, is calculated according to the ion energy E.
Step two, calculating the ion implantation amount phi, wherein the ion implantation amount phi meets the following conditions:
after ions are injected into the Schottky diode according to the ion injection amount phi, the variation of the forward and reverse characteristics of the Schottky diode can be respectively smaller than 5% -15% of the forward and reverse characteristics when the ions are not injected;
adopting TCAD software to simulate and simulate the forward characteristic change and the reverse characteristic change of the Schottky diode, and changing the ion implantation amount phi of the Schottky diode through simulation, so that in the TCAD software simulation, the forward characteristic and the reverse characteristic variation of the Schottky diode is less than 5% -15% of the forward characteristic and the reverse characteristic of the Schottky diode when ions are not implanted, and recording the ion implantation amount phi (the unit is ions/cm)2)。
Preferably, the amount of change in the forward characteristic and the amount of change in the reverse characteristic of the schottky diode are respectively less than 10% of the forward characteristic and the reverse characteristic of the schottky diode when no ion is implanted, and the ion implantation amount Φ at this time can be regarded as an optimum ion implantation amount.
TCAD software, collectively referred to as Technology computer aid Design, semiconductor process simulation and device simulation tools, is distributed by Silvaco corporation, usa. The function is to simulate the electrical property and the internal state of the device by setting the parameters of the structure, the processing technology, the external conditions and the like of the device.
Step three, determining ion implantation time t according to the ion implantation amount phi, and calculating an ion beam current value I: wherein the ion implantation time t is more than or equal to 5 min;
the ion implantation time t is the operating time of the ion implanter during ion implantation of the schottky diode, which is also referred to as the irradiation time. Specific values of current and time can be determined by equilibrium considerations, and the ion implantation time should be more than 5 minutes in general to control the implantation amount error; since different ion implanters have different working current ranges, the ion implantation time t can be changed to make the ion beam current value I within the working current range of the ion implanter, and the time is usually controlled to be between 5 minutes and 3 hours, so as to meet the final ion implantation amount.
And step four, implanting ions into the active region of the Schottky diode according to the ion source voltage value V, the ion beam current value I, the ion implantation depth D and the ion implantation time t.
And (3) setting the ion implanter by using the parameters such as the ion source voltage value V, the ion beam current value I, the ion implantation time t and the like determined in the steps, and then performing ion implantation on the Schottky diode.
As shown in fig. 2, a is a metal electrode, b is an active region, and the direction of the arrow is an ion implantation direction. Ions are injected from the outside into a certain depth in the active region of the schottky diode.
Spatially charged particles can cause a variety of radiation damage within the device, the most severe of which is displacement radiation damage. The displacement radiation damage can generate defects such as vacancies, interstitial atoms and the like in the device, thereby seriously affecting the performance parameters of the device. The displacement radiation defect mainly causes the carriers of the active region of the Schottky diode to be captured by the radiation defect, so that the carrier concentration of the active region is greatly reduced, the conductivity of the active region is reduced, and the degradation of the forward characteristic is caused. Thus, the active region is the sensitive region of the schottky diode to displacement radiation damage and is severely affected by displacement radiation damage. The invention effectively improves the radiation resistance of the Schottky diode by adopting a deep ion implantation mode in the active region.
Detailed description of the invention
The second embodiment is different from the first embodiment in that the ion implantation depth D is 1 to 10 μm.
Detailed description of the invention
The third embodiment differs from the second embodiment in that, in the second step,
the forward characteristic parameters of the schottky diode are as follows: in a forward current-voltage curve of the Schottky diode, a forward voltage value is a corresponding forward current value at a position of 1V;
the reverse characteristics of a schottky diode are: in a reverse current-voltage curve of the Schottky diode, a reverse voltage value is a corresponding reverse current value at a position of 100V;
the forward characteristic variation of the schottky diode is: after ions are injected into the Schottky diode, the variation of a forward current value relative to the forward current value when the ions are not injected;
the reverse characteristic variation of the schottky diode is: after the schottky diode is implanted with ions, the reverse current value is changed relative to the reverse current value when the ions are not implanted.
Detailed description of the invention
The fourth embodiment is different from the second or third embodiment in that the first step includes:
step one, calculating the ion energy E of an ion beam according to the structural parameters, the ion type and the ion implantation depth D of the Schottky diode;
by utilizing the structural parameters of the Schottky diode, the ion energy E and range information of ions injected into the Schottky diode are obtained by adopting SRIM software simulation, wherein the range corresponds to the ion injection depth D of the ions injected into the Schottky diode, the ion injection depth D needs to be determined in advance, and after the SRIM software selects incident ions (the type of the ions to be injected into the Schottky diode) and target components (the target components are known through the Schottky diode). The SRIM software generates a table containing the ion energies E corresponding to the different ranges (ion implantation depths D) and further selects the ion energy E (in eV) corresponding to the predetermined ion implantation depth D.
SRIM software, known collectively as The Stopping and Range of ion in Matter, is compiled by James Ziegler and is a common international software for simulating particle-material interactions. The software is open source software, i.e., public source code. The function of the method is to simulate the motion and the action mode of the particles in the material, and the energy loss, the range, the collision cross section and other information of the particles in the material can be calculated.
Step two, calculating the voltage value V of the ion source by using the following formula:
wherein C is the number of unit ion charges and is determined by the ion type.
The number of charges per ion, i.e. the number of charges per ion, e.g. unit Si4+The ion carries four charges, i.e., C-4.
Detailed description of the invention
The fifth embodiment is different from the fourth embodiment in that, in the third step, the ion beam current value I is calculated by using the following formula:
wherein q is the unit charge capacity.
Detailed description of the invention
The sixth embodiment is different from the first embodiment in that it further comprises,
and step five, annealing the Schottky diode after ion implantation.
Detailed description of the invention
A seventh embodiment differs from the first, second, third, fifth or sixth embodiments in that the schottky diode is a silicon carbide schottky diode.
Silicon carbide is one of the third generation semiconductor materials, and is a research hotspot in the field of radiation resistance at present. The wide forbidden band and high atomic critical displacement energy of the silicon carbide material determine that the device has strong electromagnetic wave shock resistance and high radiation damage resistance. The structural parameters of the silicon carbide device can be further optimized, and the radiation resistance of the silicon carbide device is expected to be improved. Therefore, the invention further optimizes the structural parameters of the silicon carbide Schottky diode.
Detailed description of the invention
The eighth embodiment differs from the seventh embodiment in that the type of ions to be implanted into the schottky diode is carbon ions, silicon ions, or mixed ions, and the mixed ions are formed by mixing carbon ions and silicon ions.
When the Schottky diode is a silicon carbide Schottky diode, the type of the implanted ions can be silicon ions or carbon ions so as to avoid changing the doping type and concentration in the silicon carbide Schottky diode; the silicon ions and the carbon ions can be all kinds of silicon ions and carbon ions, namely the silicon ions and the carbon ions with the unit ion charge number of 1-4 generally. Also, silicon ions and carbon ions may be mixed when processing the same silicon carbide schottky diode.
Detailed description of the invention
The difference between the ninth embodiment and the eighth embodiment is that the structural parameters of the schottky diode are the size, the material type, the density and the doping concentration of each structure; the structures are respectively a passivation layer, a substrate layer, an electrode area and an active area.
Wherein the dimensions include values of length, width, and height.
Detailed description of the preferred embodiment
The tenth embodiment is different from the seventh embodiment in that, in the fifth embodiment, the annealing temperature is 400 to 1100 ℃, and the annealing time is 0.5 to 1 min. And finishing the anti-displacement irradiation reinforcement process flow of the SiC Schottky diode based on the deep ion injection mode after annealing treatment.
As shown in fig. 3, the schematic diagram of the comparison of the radiation resistance of the silicon carbide schottky diode is shown, where the abscissa is the radiation absorption dose of the silicon carbide schottky diode under the carbon ion irradiation source, and the ordinate is the normalized result of the forward characteristic variation of the silicon carbide schottky diode. The method for reinforcing the Schottky diode against displacement irradiation is adopted to reinforce the silicon carbide Schottky diode against displacement irradiation, and the reinforced silicon carbide Schottky diode and the silicon carbide Schottky diode which is not reinforced against displacement irradiation are irradiated and compared at the same time.
In the experiment, a carbon (C) ion irradiation source is selected to irradiate the silicon carbide Schottky diode, wherein the dose rate is 1rad/s, the total dose is 100krad, and the 100krad position and the normalized result of the forward characteristic variation (forward current at the forward voltage of 1V) of the silicon carbide Schottky diode are selected as the criterion of the radiation resistance. As can be seen from fig. 3, compared with the silicon carbide schottky diode without adding the radiation-resistant reinforcement, the silicon carbide schottky diode reinforced by the method for reinforcing the displacement-resistant radiation of the schottky diode of the invention has the displacement-resistant radiation capability improved by about 2.8 times. Therefore, the method for reinforcing the Schottky diode against displacement radiation can greatly reduce the influence of displacement radiation defects on the performance of the device and improve the radiation resistance of the silicon carbide Schottky diode.
Claims (8)
1. The Schottky diode displacement-resistant irradiation reinforcing method based on the deep ion implantation mode is characterized by comprising the following specific steps of:
determining the type and the implantation depth D of ions to be implanted into the Schottky diode according to the structural parameters of the Schottky diode, and calculating the voltage value V of an ion source;
step two, calculating an ion implantation amount phi, wherein the ion implantation amount phi meets the following conditions:
after ions are injected into the Schottky diode according to the ion injection amount phi, the variation of the forward and reverse characteristics of the Schottky diode can be respectively smaller than 5% -15% of the forward and reverse characteristics when the ions are not injected;
step three, determining ion implantation time t according to the ion implantation amount phi, and calculating an ion beam current value I: wherein the ion implantation time t is more than or equal to 5 min;
implanting ions into an active region of the Schottky diode according to the ion source voltage value V, the ion beam current value I, the ion implantation depth D and the ion implantation time t;
in the second step, the first step is carried out,
the forward characteristics of a schottky diode are: in a forward current-voltage curve of the Schottky diode, a forward voltage value is a forward current value corresponding to a 1V position;
the reverse characteristics of a schottky diode are: in a reverse current-voltage curve of the Schottky diode, a reverse voltage value is a reverse current value corresponding to a position of 100V;
the forward characteristic variation of the schottky diode is as follows: after ions are injected into the Schottky diode, the variation of the forward current value relative to the variation of the forward current value when the ions are not injected;
the reverse characteristic variation of the schottky diode is as follows: after ions are injected into the Schottky diode, the reverse current value is changed relative to the reverse current value when the ions are not injected;
the Schottky diode is a silicon carbide Schottky diode.
2. The Schottky diode displacement radiation resistance reinforcing method based on the deep ion implantation mode as claimed in claim 1, wherein the ion implantation depth D is 1-10 μm.
3. The schottky diode displacement radiation-resistant reinforcement method based on the deep ion implantation mode as claimed in claim 2, wherein the first step comprises:
step one, calculating the ion energy E of an ion beam according to the structural parameters, the ion type and the ion implantation depth D of the Schottky diode;
step two, calculating the voltage value V of the ion source by using the following formula:
where C is the number of unit ion charges, determined by the ion type.
4. The schottky diode displacement radiation resistance reinforcing method based on the deep ion implantation mode as claimed in claim 3, wherein in the third step, the ion beam current value I is calculated by using the following formula:
wherein q is the unit charge capacity.
5. The deep ion implantation-based schottky diode irradiation hardening method according to claim 1, further comprising,
and fifthly, annealing the Schottky diode after ion implantation.
6. The schottky diode displacement radiation-resistant reinforcement method based on the deep ion implantation mode as claimed in claim 1, wherein the type of ions to be implanted into the schottky diode is carbon ions, silicon ions or mixed ions, and the mixed ions are formed by mixing carbon ions and silicon ions.
7. The schottky diode displacement radiation-resistant reinforcement method based on the deep ion implantation mode as claimed in claim 6, wherein the structural parameters of the schottky diode are the size, the material type, the density and the doping concentration of each structure; the structures are respectively a passivation layer, a substrate layer, an electrode area and an active area.
8. The Schottky diode displacement radiation-resistant reinforcing method based on the deep ion implantation mode as claimed in claim 5, wherein in the fifth step, the annealing temperature is 400-1100 ℃, and the annealing time is 0.5-1 min.
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| CN103887155A (en) * | 2014-04-04 | 2014-06-25 | 哈尔滨工业大学 | Method for reinforcing movement radiation resistance of bipolar device based on base region ion injection mode |
| CN103887171A (en) * | 2014-04-04 | 2014-06-25 | 哈尔滨工业大学 | Method for reinforcing radiation resistance of bipolar device based on second passivation layer passivation mode |
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| CN103887155A (en) * | 2014-04-04 | 2014-06-25 | 哈尔滨工业大学 | Method for reinforcing movement radiation resistance of bipolar device based on base region ion injection mode |
| CN103887171A (en) * | 2014-04-04 | 2014-06-25 | 哈尔滨工业大学 | Method for reinforcing radiation resistance of bipolar device based on second passivation layer passivation mode |
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