CN110459649A - Single crystalline Si solar cell resist displacement irradiance method based on the injection of substrate deep ion - Google Patents
Single crystalline Si solar cell resist displacement irradiance method based on the injection of substrate deep ion Download PDFInfo
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- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 96
- 238000000034 method Methods 0.000 title claims abstract description 51
- 238000006073 displacement reaction Methods 0.000 title claims abstract description 42
- 238000002347 injection Methods 0.000 title claims abstract description 42
- 239000007924 injection Substances 0.000 title claims abstract description 42
- 239000000758 substrate Substances 0.000 title claims abstract description 35
- 230000005855 radiation Effects 0.000 claims abstract description 35
- 238000000137 annealing Methods 0.000 claims abstract description 18
- 238000005468 ion implantation Methods 0.000 claims abstract description 17
- 230000008859 change Effects 0.000 claims abstract description 16
- 230000008569 process Effects 0.000 claims abstract description 10
- 238000004088 simulation Methods 0.000 claims abstract description 10
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000004364 calculation method Methods 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 18
- 239000002245 particle Substances 0.000 abstract description 10
- 238000005516 engineering process Methods 0.000 abstract description 6
- 230000007850 degeneration Effects 0.000 abstract description 3
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 230000003014 reinforcing effect Effects 0.000 abstract description 2
- 150000002500 ions Chemical class 0.000 description 73
- 230000006378 damage Effects 0.000 description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- -1 silicon ion Chemical class 0.000 description 3
- 230000006641 stabilisation Effects 0.000 description 3
- 238000011105 stabilization Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 208000019155 Radiation injury Diseases 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000003471 anti-radiation Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 230000000191 radiation effect Effects 0.000 description 2
- 241000047703 Nonion Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011960 computer-aided design Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
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- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000001235 sensitizing effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
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- H—ELECTRICITY
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- H—ELECTRICITY
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
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Abstract
A kind of single crystalline Si solar cell resist displacement irradiance method based on the injection of substrate deep ion, belongs to solar cell microelectronics technology.The present invention, since the irradiation of space charged particle can generate irradiation defect, in turn results in the degeneration of solar cell I-V characteristic for the problem that existing solar cell.It determines the desire injection phase of ion, and according to the energy and range for being intended to the determining ion of injection phase simulation according to the structural parameters of former single crystalline Si solar cell；Then the target I-V change curve in ion implantation process is simulated, when the variable quantity of target I-V change curve is less than the 10% of former single crystalline Si solar cell I-V change curve, records ion implanting amount；The ion source voltage, ion beam current and ion implanting time of ion implantation apparatus are calculated again；Ion implantation apparatus is set, ion implanting is carried out to former single crystalline Si solar cell and is made annealing treatment, realizes the resist displacement Radiation Hardened to former single crystalline Si solar cell.The present invention is used for the reinforcing of single crystalline Si solar cell.
Description
Technical field
The present invention relates to the single crystalline Si solar cell resist displacement irradiance methods injected based on substrate deep ion, belong to the sun
Battery microelectronics technology.
Background technique
Single crystalline Si solar cell is the highest silica-based solar cell of photoelectric conversion efficiency, compared to more efficient GaAs
(GaAs) solar cell has the advantage of light weight at low cost, therefore is widely used in the small-sized spacecraft power supply system of low cost
In.The technology of preparing of single crystal silicon solar cell has been mature on the whole at present, but as aerospace industry is grown rapidly, and solar cell is by face
Face more complicated space Service Environment, this requires spacecraft space power-supply system to have a longer active time, and existing monocrystalline
Silicon solar cell is unable to satisfy requirement.Main environmental factor due to influencing solar cell for space use performance is spatial charging
Particle (different-energy electronics/proton) radiation environment, it is therefore desirable to electric to the single crystalline Si sun for how to improve anti-radiation performance
Pond advanced optimizes.
On single crystal silicon solar cell influence, the most serious is shifted radiation damages in space radiation effect.Incoming particle and target
Material atomic interaction causes target atom lattice-site battle array to change (part) and generate displacement radiation effect.When entering radion
When with target atom reciprocation occurs for son, the bulk damages such as vacancy, interstitial atom and related defects can be generated in target.These
Reciprocation can occur again for interstitial atom and vacancy, form increasingly complex defect.The physical process that it is related to is more complicated,
It is final the result is that forming complex centre.By taking single crystalline Si solar cell as an example, radiation defect mainly leads to having in active area
Effect carrier is captured by radiation defect, so that the efficient carrier concentration in active area is greatly reduced, efficient carrier service life drop
It is low, to cause the degeneration of I-V characteristic.The charged particle irradiation fluence that displacement damage can be generated is bigger, in single crystalline Si material
The complex centre quantity of interior formation is more, caused by performance degradation it is also just further serious.
Therefore, against the above deficiency, it is desirable to provide a kind of method makes solar cell in space charged particle radiation environment
Internal shifted radiation defect is able to maintain stabilization, not because radiating the increase of fluence due to significant change, to improve single crystalline Si too
The Radiation hardness in positive electricity pond.
Summary of the invention
For existing solar cell since the irradiation of space charged particle can generate irradiation defect, solar cell is in turn resulted in
The problem of I-V characteristic is degenerated, the present invention provide a kind of single crystalline Si solar cell resist displacement spoke based on the injection of substrate deep ion
According to method.
A kind of single crystalline Si solar cell resist displacement irradiance method based on the injection of substrate deep ion of the invention, feature
Be, it the following steps are included:
Step 1: according to the structural parameters of former single crystalline Si solar cell, determining the desire injection phase of ion, and according to being intended to infuse
Enter position and simulates the energy and range for determining ion；
Step 2: by the ion implanting original single crystalline Si solar cell, the target I-V variation in ion implantation process is simulated
Curve, when the variable quantity of target I-V change curve is less than the 10% of former single crystalline Si solar cell I-V change curve, record from
Sub- injection rate；
Step 3: according to the energy of ion and ion implanting amount, ion source voltage, the ion beam electricity of ion implantation apparatus are calculated
Stream and ion implanting time；
Step 4: setting ion implantation apparatus, and ion implanting is carried out to former single crystalline Si solar cell by ion implantation apparatus；
Step 5: making annealing treatment the single crystalline Si solar cell for completing ion implanting, realizes to the former single crystalline Si sun
The resist displacement Radiation Hardened of battery.
Single crystalline Si solar cell resist displacement irradiance method according to the present invention based on the injection of substrate deep ion, the original
The structural parameters of single crystalline Si solar cell include the material, density, doping concentration and thickness of former single crystalline Si solar cell each section.
It is according to the present invention based on substrate deep ion injection single crystalline Si solar cell resist displacement irradiance method, it is described from
Son is silicon ion.
It is according to the present invention based on substrate deep ion injection single crystalline Si solar cell resist displacement irradiance method, it is described from
The calculation method of component voltage V are as follows:
E is the energy of ion in formula, and C is ionic charge amount.
It is according to the present invention based on substrate deep ion injection single crystalline Si solar cell resist displacement irradiance method, it is described from
The determination method of electron-beam current I and ion implanting time t are as follows:
Φ is ion implanting amount in formula, and q is unit quantities of charge.
It is according to the present invention based on substrate deep ion injection single crystalline Si solar cell resist displacement irradiance method, it is described from
Sub- injection length t is greater than 5 minutes.
Single crystalline Si solar cell resist displacement irradiance method according to the present invention based on the injection of substrate deep ion, the step
The annealing temperature made annealing treatment in rapid five to the single crystalline Si solar cell for completing ion implanting is 300 DEG C -400 DEG C.
Single crystalline Si solar cell resist displacement irradiance method according to the present invention based on the injection of substrate deep ion, the step
The annealing time made annealing treatment in rapid five to the single crystalline Si solar cell for completing ion implanting is 0.5 minute to 1 minute.
Single crystalline Si solar cell resist displacement irradiance method according to the present invention based on the injection of substrate deep ion, step 1
The energy and range of middle determining ion pass through SRIM software simulated implementation.
Single crystalline Si solar cell resist displacement irradiance method according to the present invention based on the injection of substrate deep ion, step 2
In simulation process pass through TCAD software simulated implementation.
Beneficial effects of the present invention: the method for the present invention is by injecting ion in single crystalline Si solar cell base area substrate deep layer
Mode can generate compound action the defect as caused by shifted radiation artificially to introducing defect trap inside solar cell,
Make solar cell after being irradiated by space charged particle, internal shifted radiation defect is able to maintain stabilization, without because of spoke
It penetrates the increase of fluence and significant change, so that the Radiation hardness of single crystalline Si solar cell can be improved, keeps solar cell I-V special
The stabilization of property.
Experiments verify that the single crystalline Si solar cell and existing single crystalline Si solar cell that are handled using the method for the present invention are carried out
Comparison, Radiation hardness can be improved about 3-4 times.
Detailed description of the invention
Fig. 1 is showing for the single crystalline Si solar cell resist displacement irradiance method of the present invention based on the injection of substrate deep ion
Example property flow chart；
Fig. 2 is the schematic diagram to former single crystalline Si solar cell deep layer injection ion；1 indicates electrode in figure, and 2 indicate active
Area, 3 indicate substrate；Downward arrow indicates ion implanting；
Fig. 3 is the Radiation hardness comparison diagram after the non-ion implanting of single crystalline Si solar cell sample and deep ion injection.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art without creative labor it is obtained it is all its
His embodiment, shall fall within the protection scope of the present invention.
It should be noted that in the absence of conflict, the feature in embodiment and embodiment in the present invention can phase
Mutually combination.
The present invention will be further explained below with reference to the attached drawings and specific examples, but not as the limitation of the invention.
Specific embodiment one, in conjunction with shown in Fig. 1 and Fig. 2, the present invention provides one kind based on substrate deep ion inject
Single crystalline Si solar cell resist displacement irradiance method, comprising the following steps:
Step 1: according to the structural parameters of former single crystalline Si solar cell, determining the desire injection phase of ion, and according to being intended to infuse
Enter position and simulates the energy and range for determining ion；
Step 2: by the ion implanting original single crystalline Si solar cell, the target I-V variation in ion implantation process is simulated
Curve, when the variable quantity of target I-V change curve is less than the 10% of former single crystalline Si solar cell I-V change curve, record from
Sub- injection rate；
Step 3: according to the energy of ion and ion implanting amount, ion source voltage, the ion beam electricity of ion implantation apparatus are calculated
Stream and ion implanting time；
Step 4: setting ion implantation apparatus, and ion implanting is carried out to former single crystalline Si solar cell by ion implantation apparatus；
Step 5: making annealing treatment the single crystalline Si solar cell for completing ion implanting, realizes to the former single crystalline Si sun
The resist displacement Radiation Hardened of battery.
In the step of present embodiment one, the desire injection phase of ion includes the injection depth and orientation of ion, according to knot
After structure parameter determines injection phase, the energy and range of ion to be implanted needed for being determined using the simulation of corresponding software；Step
In rapid two, during injecting ion to former single crystalline Si solar cell, with the change of ion implanting amount, according to the energy of ion
Amount and the real-time simulated target I-V change curve of range variable quantity, choose I-V curve variable quantity less than 10%, be in order to avoid
The output electric property of solar cell can be influenced too much；It, can be with after the energy and the ion implanting amount that determine ion in step 3
Corresponding ion implantation apparatus is configured, and then implements ion implantation process, the anti-position of former single crystalline Si solar cell can be improved
Irradiation behaviour is moved, the performance of former single crystalline Si solar cell is reinforced to realize.
In the method for the present invention, within the scope of the substrate certain depth of single crystalline Si solar cell base area, for example (,) it is active apart from battery
In the thickness of regional boundary face 10nm-20nm, defect trap is artificially induced by way of ion implanting, it can be to by shifted radiation
Caused by defect generate compound action, make shifted radiation defect inside solar cell keep stablizing, not because radiating the increasing of fluence
Significant change greatly, to improve the Radiation hardness of single crystalline Si solar cell.Therefore, the method for the present invention is conducive to improve monocrystalline
Si solar cell resist displacement irradiation ability.
Further, as shown in connection with fig. 2, the structural parameters of the former single crystalline Si solar cell include former single crystalline Si solar cell
The material, density, doping concentration and thickness of each section.
The structure of usual single crystalline Si solar cell includes substrate, active area and electrode, and the ion needs to be injected into substrate
Layer is infused in substrate layer and active area interface within the scope of 10-20nm, can increase ion implanting and introduce defect capture carrier
Probability.
As an example, the ion is silicon ion.Silicon ion is injected to single crystalline Si solar cell, it is ensured that is only introduced and is lacked
It falls into, avoids changing after ion implanting the doping type and concentration inside former single crystalline Si solar cell, do not change substrate material
Matter.
Further, the calculation method of the ion source voltage V are as follows:
E is the energy of ion, unit eV in formula；C is ionic charge amount.
Further, the determination method of the ion beam current I and ion implanting time t are as follows:
Φ is ion implanting amount in formula, and q is unit quantities of charge.The ion implanting time t is irradiation time, i.e., from
Sub- implanter runing time.
The determination of ion beam current I and ion implanting time t can be considered by equilibrium to determine specific value.
Further, ion implanting time t is greater than 5 minutes.The usual ion implanting time should be greater than 5 minutes, to keep away
Exempt from the injection rate error as brought by the experimental implementation time, to control the ion implanting margin of error is less than total injection rate 1%.
Further, the annealing single crystalline Si solar cell for completing ion implanting made annealing treatment in the step 5
Temperature is 300 DEG C -400 DEG C, this temperature range destressing and recrystallization effect are best.
Further, the annealing single crystalline Si solar cell for completing ion implanting made annealing treatment in the step 5
Time be 0.5 minute to 1 minute, on the one hand can achieve the effect that ion implanting backsight bottom material recrystallize, on the other hand by
Fuel factor caused by making annealing treatment is not enough to influence other function structure.
As an example, determining that the energy of ion and range pass through SRIM software simulated implementation in step 1.The SRIM is soft
Part, full name The Stopping and Range of Ions in Matter, is worked out by James Ziegler, is in the world
Common particle and material interaction simulation softward.The software is open source software, that is, discloses source code.It is simulation grain that it, which is acted on,
The movement and the mode of action of son in the material can calculate the letter such as energy loss, range, the collision cross-section of particle in the material
Breath.
As an example, the simulation process in step 2 passes through TCAD software simulated implementation.The TCAD software, full name are
Technology Computer Aided Design, semiconductor process simulation and device simulation tool, the distribution of the software
Quotient is U.S. Silvaco company.It, which is acted on, is come by setting the parameters such as structural parameters, processing technology, the external condition of device
The electrical property and internal state of analog device.
Single crystalline Si solar cell after present invention annealing realizes resist displacement Radiation Hardened.
The working principle of the invention:
Space charged particle can generate a variety of radiation injuries inside solar cell, and wherein shifted radiation damage exports it
Electrical property influences the most serious.The defects of shifted radiation damage can generate vacancy, interstitial atom inside solar cell, thus sternly
The performance parameter of important place influence solar cell.Shifted radiation defect is mainly the carrier for leading to single crystalline Si solar cell active area
It is captured by radiation defect, so that the carrier concentration of active area is greatly reduced, the conductivity of active area reduces, to cause forward direction
The degeneration of characteristic.Therefore, active area is the sensitizing range of single crystalline Si solar cell shifted radiation damage, seriously by shifted radiation
The influence of damage.The present invention effectively increases the anti-spoke of single crystalline Si solar cell by the way of the deep ion injection in substrate
According to ability.
Resist displacement Radiation Hardened is carried out to single crystalline Si solar cell using the method for the invention, and by the device after reinforcing
Radiation contrast is carried out simultaneously with the single crystalline Si solar cell for not carrying out resist displacement Radiation Hardened, as shown in Figure 3.Si is selected in this experiment
Ion irradiation source, dosage rate 1rad/s, accumulated dose 100krad are selected at 100krad, and the I-V of single crystalline Si solar cell is special
Property variable quantity normalization result (forward current forward voltage 1V at) as capability of resistance to radiation criterion.As seen from Figure 3, with not plus
The single crystalline Si solar cell for entering radiation hardened is compared, and the transistor resist displacement after the method for the invention is reinforced irradiates energy
Power improves about 3.42 times.Therefore the method for the present invention, can greatly reduce influence of the shifted radiation defect to solar cell performance, mention
The Radiation hardness of high single crystalline Si solar cell.
The present invention uses existing SRIM software and TCAD software, carries out performance simulation to single crystalline Si solar cell, effectively
Ground shortens parameter and fixes time really and program, parameter needed for quickly capable of determining ion implanting.
The method of the present invention can be not only used for carrying out radiation hardened to existing single crystalline Si solar cell, can also be in single crystalline Si
It is carried out in the production process of solar cell, directly produces the single crystalline Si solar cell with resist displacement irradiation behaviour, can optimize
The anti-radiation performance of single crystalline Si solar cell, is an important resist displacement Radiation Hardened technology.
Add in conclusion the single crystalline Si solar cell after the method for the invention is processed effectively realizes resist displacement irradiation
Gu having more reliable resist displacement radiation injury ability.
Although describing the present invention herein with reference to specific embodiment, it should be understood that, these realities
Apply the example that example is only principles and applications.It should therefore be understood that can be carried out to exemplary embodiment
Many modifications, and can be designed that other arrangements, without departing from spirit of the invention as defined in the appended claims
And range.It should be understood that different appurtenances can be combined by being different from mode described in original claim
Benefit requires and feature described herein.It will also be appreciated that the feature in conjunction with described in separate embodiments can be used
In other described embodiments.
Claims (10)
1. a kind of single crystalline Si solar cell resist displacement irradiance method based on the injection of substrate deep ion, which is characterized in that it is wrapped
Include following steps:
Step 1: according to the structural parameters of former single crystalline Si solar cell, the desire injection phase of ion is determined, and according to position to be injected
Set the energy and range simulated and determine ion；
Step 2: by the ion implanting original single crystalline Si solar cell, the target I-V simulated in ion implantation process changes song
Line records ion when the variable quantity of target I-V change curve is less than the 10% of former single crystalline Si solar cell I-V change curve
Injection rate；
Step 3: according to the energy of ion and ion implanting amount, calculate the ion source voltage of ion implantation apparatus, ion beam current and
The ion implanting time；
Step 4: setting ion implantation apparatus, and ion implanting is carried out to former single crystalline Si solar cell by ion implantation apparatus；
Step 5: making annealing treatment the single crystalline Si solar cell for completing ion implanting, realizes to former single crystalline Si solar cell
Resist displacement Radiation Hardened.
2. the single crystalline Si solar cell resist displacement irradiance method according to claim 1 based on the injection of substrate deep ion,
It is characterized in that, the structural parameters of the original single crystalline Si solar cell include the material, close of former single crystalline Si solar cell each section
Degree, doping concentration and thickness.
3. the single crystalline Si solar cell resist displacement irradiance method according to claim 1 based on the injection of substrate deep ion,
It is characterized in that, the ion is silicon ion.
4. the single crystalline Si solar cell resist displacement irradiance method according to claim 1 based on the injection of substrate deep ion,
It is characterized in that, the calculation method of the ion source voltage V are as follows:
E is the energy of ion in formula, and C is ionic charge amount.
5. the single crystalline Si solar cell resist displacement irradiance method according to claim 4 based on the injection of substrate deep ion,
It is characterized in that, the determination method of the ion beam current I and ion implanting time t are as follows:
Φ is ion implanting amount in formula, and q is unit quantities of charge.
6. the single crystalline Si solar cell resist displacement irradiance method according to claim 5 based on the injection of substrate deep ion,
It is characterized in that, ion implanting time t is greater than 5 minutes.
7. the single crystalline Si solar cell resist displacement irradiance method according to claim 6 based on the injection of substrate deep ion,
It is characterized in that, the annealing temperature made annealing treatment in the step 5 to the single crystalline Si solar cell for completing ion implanting is
300℃-400℃。
8. the single crystalline Si solar cell resist displacement irradiance method according to claim 7 based on the injection of substrate deep ion,
It is characterized in that, the annealing time made annealing treatment in the step 5 to the single crystalline Si solar cell for completing ion implanting is
0.5 minute to 1 minute.
9. the single crystalline Si solar cell resist displacement irradiance method according to claim 1 based on the injection of substrate deep ion,
It is characterized in that, determining that the energy of ion and range pass through SRIM software simulated implementation in step 1.
10. the single crystalline Si solar cell resist displacement irradiance method according to claim 1 based on the injection of substrate deep ion,
It is characterized in that, the simulation process in step 2 passes through TCAD software simulated implementation.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101388422A (en) * | 2008-09-26 | 2009-03-18 | 天津大学 | Atomic oxygen corrosion resisting surface treatment process for interconnecting tablet of solar cell array |
| CN103887155A (en) * | 2014-04-04 | 2014-06-25 | 哈尔滨工业大学 | Method for reinforcing movement radiation resistance of bipolar device based on base region ion injection mode |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101388422A (en) * | 2008-09-26 | 2009-03-18 | 天津大学 | Atomic oxygen corrosion resisting surface treatment process for interconnecting tablet of solar cell array |
| CN103887155A (en) * | 2014-04-04 | 2014-06-25 | 哈尔滨工业大学 | Method for reinforcing movement radiation resistance of bipolar device based on base region ion injection mode |
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