CN111554354B - Damage analysis method for heavy ion radiation silicon carbide diode under bias electric field - Google Patents
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Abstract
A damage analysis method of a heavy ion radiation silicon carbide diode under a bias electric field comprises the following steps: based on the basic structure and material composition of the silicon carbide diode, a simulation model of the silicon carbide diode is constructed through Geant4, and the magnitude of a bias electric field and the type and energy of incident particles are set in the Geant 4; simulation was performed in Geant 4: injecting incident particles into the silicon carbide diode, and simulating particle motion tracks of the incident particles in the silicon carbide diode under different bias electric fields and initial defect damage distribution of the silicon carbide diode; based on the simulation model and the initial defect damage distribution, the defect damage evolution process of the silicon carbide diode is simulated through TCAD software so as to analyze the influence of the defect damage on the electrical performance of the silicon carbide diode. The interaction relation between the bias electric field and the radiation damage is disclosed, and a technical basis is provided for the radiation effect mechanism analysis and the reliability evaluation of the silicon carbide device.
Description
Technical Field
The invention relates to the technical field of radiation-resistant analysis of semiconductor devices, in particular to a damage analysis method of a heavy ion radiation silicon carbide diode under a bias electric field.
Background
In order to build efficient and highly reliable power systems, efforts have been made to improve power switching devices, and silicon-based diodes have been the main material of power switching devices. However, silicon-based diodes have poor heat dissipation and are limited in high power applications, and in addition, the performance of silicon materials has been close to the intrinsic characteristic limit of silicon materials through continuous research on silicon-based devices for many years.
The silicon carbide is a wide bandgap semiconductor material, the bandgap width of the silicon carbide is about three times of that of the silicon material, and meanwhile, the silicon carbide material has higher thermal conductivity, so that the silicon carbide-based device has good heat dissipation performance. At present, silicon carbide-based devices are mainly applied to high-power systems, which requires that silicon carbide also has good physical and chemical properties in high-voltage and high-current environments.
Therefore, silicon carbide diodes are widely used in power factor correction circuits and boost converters, and have the advantages of extremely low switching loss, high switching frequency, stable switching characteristics, high efficiency, and the like. Meanwhile, the self thermal conductivity coefficient of the silicon carbide material is about 3 times that of the silicon material, so that the silicon carbide power device is expected to be applied to the space field to achieve the purposes of reducing the weight of electronic equipment, reducing loss, dissipating heat well and the like. When the silicon carbide device is applied in a space environment, the influence of various rays and particles in the environment on the reliability of the device is not negligible.
Although the flux of heavy ions in the space environment is low, the heavy ions have extremely strong energy loss characteristics, and the heavy ions incident into the silicon carbide diode can cause microscopic damage defects to device materials. These defects may severely affect the electrical performance of the device when the device is used in a high voltage, high current environment, and may even cause the device to fail.
Disclosure of Invention
Objects of the invention
The invention aims to provide a damage analysis method of a heavy ion radiation silicon carbide diode under a bias electric field, which utilizes Monte Carlo simulation software Geant4 and semiconductor device analysis software TCAD to carry out numerical simulation on latent track damage generated after the heavy ion radiation silicon carbide diode so as to analyze the influence of defect damage on the electrical performance of the device.
(II) technical scheme
In order to solve the above problem, according to an aspect of the present invention, there is provided a damage analysis method for a heavy ion radiation silicon carbide diode under a bias electric field, including: constructing a simulation model of the silicon carbide diode through Geant4 based on the basic structure and material composition of the silicon carbide diode; simulation was performed in Geant4, including: injecting incident particles into the silicon carbide diode, and simulating particle motion tracks of the incident particles in the silicon carbide diode under different bias electric fields and initial defect damage distribution of the silicon carbide diode; based on a simulation model and initial defect damage distribution of the silicon carbide diode, simulating a defect damage evolution process of the silicon carbide diode through TCAD software to analyze the influence of the defect damage on the electrical performance of the silicon carbide diode.
Further, before constructing the simulation model of the silicon carbide diode, the method further comprises: and longitudinally sectioning the silicon carbide diode by using an FIB (Focused Ion beam), and calibrating the components of each layer of the sectioned silicon carbide diode to obtain the basic structure and the material composition of the silicon carbide diode.
Further, before performing simulation in Geant4, the method further includes: in Geant4, the magnitude of the bias electric field, the incident direction of the incident particle, the type of the incident particle, and the energy of the incident particle are set.
Further, injecting the incident particles into the silicon carbide diode includes: incident particles are perpendicularly incident from the surface of the positive electrode of the silicon carbide diode.
Further, the incident particles are high-energy fast heavy ions.
Furthermore, the energy of the high-energy fast heavy ions is more than 200 MeV.
(III) advantageous effects
The technical scheme of the invention has the following beneficial technical effects:
the generation and evolution process of the latent track damage of the heavy ion radiation silicon carbide diode under different bias electric fields is observed and analyzed from two dimensions of materials to the device by using Monte Carlo simulation software Geant4 and semiconductor device analysis software TCAD, and the influence of the defect damage on the electrical performance of the silicon carbide diode is further simulated.
By changing the device model provided by the invention, evaluation research of heavy ion radiation experiments under different working states and working voltages can be carried out corresponding to silicon carbide diodes with different characteristic sizes or different growth modes. The radiation resistance of the device can be well predicted and evaluated while saving a great deal of time and expense.
The interaction relation between the bias electric field and the radiation damage is disclosed, a technical basis is provided for the radiation effect mechanism analysis and reliability evaluation of the silicon carbide device, and the method has important significance for promoting the application of the silicon carbide device in the aerospace field.
Drawings
FIG. 1 is a cross-sectional view of a silicon carbide JBS diode of an embodiment provided by the present invention;
FIG. 2 is a graph showing the trace distribution of Cu ions and secondary electrons when Cu ions are incident on a silicon carbide diode according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of the variation of ionization energy loss with incident depth under different bias electric fields after Cu ions are incident on a silicon carbide diode according to an embodiment of the present invention;
FIG. 4 is a schematic diagram illustrating the total energy deposition, energy deposition by Cu ions, and energy deposition by secondary electrons of Cu ions in a silicon carbide diode under different electric fields according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of the distribution of space charge generated by Cu ion incidence in a silicon carbide diode according to an embodiment of the present invention;
fig. 6 is a schematic diagram of the evolution of transient current in a silicon carbide diode over time at different electric field strengths for an embodiment provided by the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings in conjunction with the following detailed description. It should be understood that the description is intended to be exemplary only, and is not intended to limit the scope of the present invention. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present invention.
The present invention will be described in detail below with reference to the accompanying drawings and examples.
The invention provides a damage analysis method of a heavy ion radiation silicon carbide diode under a bias electric field, which comprises the following steps:
step S1: and utilizing FIB (Focused Ion beam) to longitudinally cut the silicon carbide diode, and calibrating the components of each layer of silicon carbide diode after cutting to obtain the basic structure and material composition of the silicon carbide diode.
Step S2: inputting the basic structure and material composition of the silicon carbide diode into Geant4 to construct a simulation model of the silicon carbide diode.
And step S3: the magnitude of the bias electric field, the incident direction of the incident particle, the type of the incident particle, and the energy of the incident particle are set in Geant 4.
And step S4: and performing simulation in Geant4, vertically injecting incident particles from the surface of the anode of the silicon carbide diode, and enabling the incident particles to pass through anode metal and interact with the material of the silicon carbide diode so as to obtain the particle motion track of the incident particles in the silicon carbide diode under different applied electric fields and the initial defect damage distribution of the silicon carbide diode.
Step S5: based on a simulation model of the silicon carbide diode and initial defect damage distribution of the silicon carbide diode, defect damage evolution after the silicon carbide diode is simulated through TCAD software, and influence of the defect damage on electrical performance of the silicon carbide diode is analyzed.
Specifically, in the above steps, geant4 (monte carlo program package developed by the european nuclear Center (CERN) initiative) is software for performing experimental simulation of particles, and can simulate the transport of particles in the material in detail. TCAD (Technology Computer aid Design) is a semiconductor process simulation and device simulation tool for determining the device structure of a material under a standard process, calculating electrical behavior based on the device structure, and extracting electrical parameters conforming to the standard from a device model.
When high voltage is applied to the silicon carbide diode, a high bias electric field can be formed inside the silicon carbide diode, heavy ion radiation damage of the silicon carbide diode under the bias electric field can be simulated by utilizing Geant4 software, and meanwhile, numerical simulation is carried out on latent track damage generated after incident particles irradiate the silicon carbide diode so as to analyze the influence of the bias electric field on the radiation damage generation and distribution.
The radiation damage is further converted into electron hole pairs, transient current caused in the silicon carbide diode by heavy ion radiation under different bias electric fields is obtained through TCAD, the influence of the bias electric fields on the heavy ion radiation damage of the silicon carbide diode is clarified from a micro mechanism to a macro effect, and the influence of heavy ion incidence under different bias electric fields on the electrical property of the silicon carbide diode is analyzed.
Wherein, the incident particles are high-energy fast heavy ions, and the energy of the high-energy fast heavy ions is more than 200 MeV.
When the fast and heavy ions bombard the silicon carbide diode, namely the target material is bombarded, energy is lost through inelastic collision of the ions and outer nuclear electrons in the target material, and the energy loss mainly comes from incident particles and secondary electrons. The energy of deposition of fast and heavy ions along the incident path is localized to a small area, which may result in permanent structural changes, i.e., the creation of latent tracks, in a spatially limited area. The formation and morphology of the latent tracks depends not only on the type and energy of the incident particles, but also on the type of target material.
For conventional silicon semiconductor materials, about 3.6eV energy is required on average for each electron-hole pair to be generated, whereas silicon carbide materials require more energy to generate electron-hole pairs due to forbidden bandwidth. The electron hole pairs are generated in large quantity near the ion tracks, on one hand, the crystal lattices of the device materials are damaged, and on the other hand, the redundant electron hole pairs form transient current to influence the normal work of the device.
When voltage is applied to the device, a large bias electric field appears in the device, and the appearance of the electric field influences the movement of heavy ions, so that the size and the distribution of ionization energy loss are influenced.
The method for analyzing damage of the present invention will be described in detail below with reference to specific examples.
Example (b):
step S1: and utilizing FIB to longitudinally cut the silicon carbide diode, and calibrating the components of each layer of the cut silicon carbide diode to obtain the basic structure and material composition of the silicon carbide diode.
Wherein, the longitudinal cutting is cutting from the surface of the positive pole of the silicon carbide diode downwards, and the structural distribution of the diode can be obtained completely.
Fig. 1 is a cross-sectional view of a silicon carbide JBS diode, with the top showing the silicon carbide anode metal, the middle being the silicon carbide substrate and epitaxial layer, and the bottom being the silicon carbide cathode metal, looking at fig. 1. From the cross-sectional view, the silicon carbide diode has no doping concentration, so that the epitaxial layer and the substrate are not separated.
Specifically, the basic structure and material composition of the silicon carbide diode were observed and recorded using a TEM (Transmission Electron Microscope).
Step S2: inputting the basic structure and material composition of the silicon carbide diode into Geant4 to construct a simulation model of the silicon carbide diode.
Wherein, the basic structure of the silicon carbide diode comprises metal aluminum at the anode of the diode, and the thickness is about 1 μm; the silicon carbide epitaxial layer is arranged below the anode, each doped region in the epitaxial layer can be observed only by special dyeing treatment, and the doping can be ignored and ignored in the Geant4 simulation, so the epitaxial layer is considered as a whole, and the thickness is about 5 mu m; below the epitaxial layer is a substrate region, about 182 μm; the lead metal of the cathode of the diode is arranged below the substrate.
And step S3: the magnitude of the bias electric field, the type and energy of the incident particles, and the incident direction are set in Geant 4.
In this embodiment, high-energy heavy ions, i.e., cu (copper) ions of 212MeV, are taken as an example, and the type and energy of incident particles are set in Geant 4.
And step S4: simulation was performed in Geant4, including: and vertically injecting Cu ions from the surface of the anode of the silicon carbide diode, wherein the Cu ions pass through the anode metal and then interact with the material of the silicon carbide diode.
Referring to fig. 2, fig. 2 is a graph showing a trace distribution of Cu ions and secondary electrons when the Cu ions are incident on the sic diode.
In FIG. 2, a is a trace plot when the electric field intensity is 0, and b is an electric field intensity of 1 × 10 6 Trace plot at V/m, c is the electric field strength of 5X 10 9 Trace plot at V/m, d is the electric field strength 1X 10 10 Trace plot at V/m.
The rectangular structural area in the figure represents the simplified silicon carbide diode structure, the leftmost small rectangular frame is anode metal, and the silicon carbide epitaxial layer is arranged towards the right; cu ions are injected from the surface of the positive electrode metal and penetrate the epitaxial layer into the substrate region. The zigzag lines in the figure represent the motion tracks of electrons, and when Cu ions are vertically incident from the surface of the anode metal of the diode, a large number of electrons are generated along the Cu ion tracks, so that the Cu ion tracks are wrapped by the electron tracks and are hardly observed.
The electrons interact with the silicon carbide diode and move irregularly in the silicon carbide diode until the energy depletion stops. As can be seen from fig. 2, as the electric field intensity increases, the motion trajectory of the secondary electrons is more significantly influenced by the electric field, and particularly, the motion end of the secondary electrons moves in the opposite direction of the electric field under the action of the electric field. The direction of the electric field in the epitaxial layer faces the cathode of the diode, so that the direction of the electric field force applied to the negatively charged electrons faces the anode of the diode.
When the external electric field is zero, no electric field force acts, and the electron motion trail is randomly dispersed. At 10 6 Under a V/m electric field, part of electrons start to deflect to the anode of the diode in the motion direction of the tail end of the electron motion track, and the electric field force is not enough to obviously shift the electron track. When the electric field is 5X 10 9 V/m, more and more electrons are towards the anode of the diode at the tail end of the motion trackThe direction movement and the movement track of the electrons are comparatively divergent. At 10 6 Under the action of the V/m electric field, the secondary electrons are subjected to stronger electric field force when being generated along the Cu ion tracks, and the divergence degree of the secondary electrons is obviously reduced. The denser the electron is at the track near the Cu ion track, the greater the probability of energy deposition around the Cu ion track.
Assuming that a moving atom strikes a target atom and delivers energy to the latter in excess of Edisp (displacement energy), the target atom will be struck off its lattice site. At the end of the Cu ion range, the energy of Cu ions is low enough to react with the silicon carbide material to generate a large amount of secondary electrons, and the energy loss is mainly caused by the collision of Cu ions and silicon carbide atoms, so that when the number of vacancies in the material is high enough, the material is amorphized, and the electrical properties of the material are affected. Meanwhile, the action of the electric field is more obvious after the energy of the Cu ions is reduced, and the motion trail of the Cu ions gradually deviates from a straight line.
Referring to fig. 3, fig. 3 is a schematic diagram showing the variation of the ionization energy loss with the incident depth under different bias electric fields after Cu ions are incident on the silicon carbide diode.
In FIG. 3, the abscissa represents the incident depth (unit: nm) of Cu ions incident on the silicon carbide diode, and the ordinate represents the ionization energy loss (unit: keV/nm) per unit depth. Within the depth range of 0-5000nm, the ionization energy loss of a bias electric field at a certain time and unit depth has no obvious change; along with the increase of the bias electric field, the ionization energy loss per unit depth is increased to different degrees when the electric field strength is 1 multiplied by 10 10 At V/m, the maximum ionization energy loss per unit depth can reach 28.8keV/nm.
Referring to fig. 4, fig. 4 is a schematic diagram illustrating the total energy deposition, energy deposition caused by Cu ions, and energy deposition caused by secondary electrons of Cu ions in a silicon carbide diode under different electric fields.
In FIG. 4, the ordinate represents energy deposition (unit: meV), and the abscissa represents total energy deposition (total), energy deposition by Cu ions (Cu +), and energy deposition by secondary electrons (e-). The increase in ionization energy loss in the 0-5000nm incident depth range results primarily from the increase in secondary electron (e-) energy deposition with increasing electric field strength.
As can be seen from FIG. 2, the secondary electrons (e-) are significantly affected by the electric field strength. The Cu ions have higher self energy in the depth range, the influence of a bias electric field on the Cu ions is not obvious, and the ionization energy loss generated by the interaction of the Cu ions and materials does not obviously change along with the change of the electric field intensity.
Referring to fig. 5, fig. 5 is a schematic diagram illustrating the distribution of space charge generated by Cu ion incidence in a silicon carbide diode.
Where the ordinate represents the abscissa represents charge deposition, the abscissa represents width, and the ordinate represents depth. (a) Showing the charge deposition distribution profile when the electric field intensity is zero, and (b) showing the electric field intensity is 1X 10 6 The charge deposition distribution at V/m, (c) is the electric field intensity of 5X 10 9 The charge deposition distribution profile at V/m, and (d) the electric field intensity is 1X 10 10 Charge deposition profile at V/m.
It can be seen that the trace center of Cu ions is at zero width, the charge deposition reaches a maximum at the trace center and decreases linearly away from the trace center. When the applied electric field is zero and 10 6 At V/m, the charge deposition of the Cu ion track center is basically unchanged, and the maximum value of the charge deposition is not more than 150fC; when the applied electric field is 5X 10 9 At V/m, the charge deposition of the track center is stabilized above 150fC; when the applied electric field is 10 10 At V/m, the charge deposition at the center of the track is more than 190fC, and the maximum charge deposition can reach 206fC.
It can be seen that the distribution range of the charge density in the direction perpendicular to the Cu ion track is wider and wider as the electric field strength is increased. The space charge at the center of the Cu ion track mainly comes from the interaction of Cu ions and the silicon carbide diode, and is not obviously changed under the influence of an electric field; the space charge far away from the track is mainly caused by electron deposition energy, so the space charge changes obviously under the action of an electric field.
Step S5: based on the simulation model of the silicon carbide diode and the initial defect damage distribution of the silicon carbide diode, defect damage evolution of the silicon carbide diode is simulated through TCAD software so as to analyze the influence of the defect damage on the electrical performance of the silicon carbide diode.
Turning to fig. 6, fig. 6 is a schematic diagram showing the transient current in a sic diode with different electric field strengths over time. The abscissa of the graph represents time (unit: s) and the ordinate represents transient current (unit: a).
Transient current caused by Cu ion radiation in the silicon carbide diode under different electric field strengths is simulated by using TCAD software. According to the structure simulated by GEANT4, at 5X 10 -14 The radiation-induced electron hole pairs in the silicon carbide diode at s time begin a second iteration, forming a transient current in the diode that evolves over time. As the electric field strength changes, the density and distribution of the initial electron-hole pairs change, thereby affecting the iteration of space charge. The larger the electric field strength, the larger the reverse transient current generated in the diode, at 1 × 10 10 The peak value of the transient current under the electric field intensity of V/m can reach 0.06A.
The invention aims to protect a damage analysis method of a heavy ion radiation silicon carbide diode under a bias electric field, which comprises the following steps: constructing a simulation model of the silicon carbide diode through Geant4 based on the basic structure and material composition of the silicon carbide diode, and setting the magnitude of a bias electric field and the type and energy of incident particles in the Geant 4; simulation was performed in Geant4, including: injecting incident particles into the silicon carbide diode, and simulating particle motion tracks of the incident particles in the silicon carbide diode under different bias electric fields and initial defect damage distribution of the silicon carbide diode; based on the simulation model and the initial defect damage distribution of the silicon carbide diode, the defect damage evolution process of the silicon carbide diode is simulated through TCAD software so as to analyze the influence of the defect damage on the electrical performance of the silicon carbide diode. The generation and evolution process of the latent track damage of the heavy ion radiation silicon carbide diode under different bias electric fields is observed and analyzed from two dimensions of materials to the device by using Monte Carlo simulation software Geant4 and semiconductor device analysis software TCAD, and the influence of the defect damage on the electrical performance of the silicon carbide diode is further simulated. The interaction relation between the bias electric field and the radiation damage is disclosed, a technical basis is provided for the radiation effect mechanism analysis and reliability evaluation of the silicon carbide device, and the method has important significance for promoting the application of the silicon carbide device in the aerospace field.
It is to be understood that the above-described embodiments of the present invention are merely illustrative of or explaining the principles of the invention and are not to be construed as limiting the invention. Therefore, any modification, equivalent replacement, improvement and the like made without departing from the spirit and scope of the present invention should be included in the protection scope of the present invention. Further, it is intended that the appended claims cover all such variations and modifications as fall within the scope and boundaries of the appended claims or the equivalents of such scope and boundaries.
Claims (6)
1. A method for analyzing damage of a heavy ion radiation silicon carbide diode under a bias electric field is characterized by comprising the following steps:
constructing a simulation model of the silicon carbide diode through Geant4 based on the basic structure and material composition of the silicon carbide diode;
simulation was performed in Geant4, including: injecting incident particles into the silicon carbide diode, and simulating particle motion tracks of the incident particles in the silicon carbide diode under different bias electric fields and initial defect damage distribution of the silicon carbide diode;
simulating a defect damage evolution process of the silicon carbide diode through TCAD software based on the simulation model and the initial defect damage distribution of the silicon carbide diode so as to analyze the influence of the defect damage on the electrical performance of the silicon carbide diode;
the simulation in the Geant4 further comprises: constructing a trace distribution diagram of incident particles and secondary particles when the incident particles are incident to the silicon carbide diode under different electric field strengths;
the simulation in the Geant4 further comprises: and constructing a schematic diagram of the change of ionization energy loss along with the incident depth of incident particles under different bias electric fields.
2. The method of claim 1, wherein prior to constructing the simulation model of the silicon carbide diode, further comprising:
and utilizing FIB (Focused Ion beam) to longitudinally cut the silicon carbide diode, and calibrating the components of each layer of silicon carbide diode after cutting to obtain the basic structure and material composition of the silicon carbide diode.
3. The method of claim 1, further comprising, prior to performing simulation in Geant 4:
in Geant4, the magnitude of the bias electric field, the incident direction of the incident particle, the type of the incident particle, and the energy of the incident particle are set.
4. The method of claim 1, wherein injecting incident particles into the silicon carbide diode comprises:
incident particles are perpendicularly incident from the surface of the positive electrode of the silicon carbide diode.
5. The method of claim 1, wherein the incident particles are high energy fast heavy ions.
6. The method of claim 5, wherein the high energy fast heavy ions have an energy of 200MeV or more.
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| JP5428450B2 (en) * | 2009-03-30 | 2014-02-26 | ソニー株式会社 | Ion irradiation damage prediction method, ion irradiation damage simulator, ion irradiation apparatus and ion irradiation method |
| CN107229775A (en) * | 2017-05-04 | 2017-10-03 | 西北核技术研究所 | The method that photoelectronic imaging device radiation injury is assessed using Monte Carlo simulation |
| CN109657370B (en) * | 2018-12-24 | 2020-07-03 | 北京航空航天大学 | Space radiation reliability assessment method for aerospace electronic product |
| CN110135074A (en) * | 2019-05-17 | 2019-08-16 | 湘潭大学 | A method of analysis heavy ion causes GaN HEMT device Latent track to damage |
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| EP2436024A1 (en) * | 2009-05-29 | 2012-04-04 | Thermo Fisher Scientific (Bremen) GmbH | Charged particle analysers and methods of separating charged particles |
| EP3614389A2 (en) * | 2018-08-23 | 2020-02-26 | Tata Consultancy Services Limited | Systems and methods for predicting structure and properties of atomic elements and alloy materials thereof |
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