CN103872106B - Flouride-resistani acid phesphatase bipolar device and the preparation method of this device - Google Patents
Flouride-resistani acid phesphatase bipolar device and the preparation method of this device Download PDFInfo
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- 239000002253 acid Substances 0.000 title claims abstract description 37
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 239000002019 doping agent Substances 0.000 claims abstract description 50
- 230000005855 radiation Effects 0.000 claims abstract description 22
- 238000000137 annealing Methods 0.000 claims abstract description 21
- 238000009792 diffusion process Methods 0.000 claims abstract description 20
- 238000002347 injection Methods 0.000 claims abstract description 14
- 239000007924 injection Substances 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 13
- 238000002513 implantation Methods 0.000 claims abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 5
- 238000004088 simulation Methods 0.000 abstract description 3
- 230000006378 damage Effects 0.000 description 10
- 208000027418 Wounds and injury Diseases 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 208000014674 injury Diseases 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000000191 radiation effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 231100000987 absorbed dose Toxicity 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000003471 anti-radiation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000005865 ionizing radiation Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
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- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Manufacturing & Machinery (AREA)
- Materials For Photolithography (AREA)
- Bipolar Transistors (AREA)
Abstract
Flouride-resistani acid phesphatase bipolar device and the preparation method of this device, are related to the Flouride-resistani acid phesphatase technology of bipolar device.It is poor in order to solve the problems, such as existing bipolar device Radiation hardness.The present invention is provided with the high-dopant concentration area centered on launch site in bipolar device base region surface.The preparation method of Flouride-resistani acid phesphatase bipolar device is：After completing base diffusion or ion implanting, before carrying out launch site diffusion or ion implanting, carry out radiation hardened method, radiation hardened method prepares base region surface doping mask plate first on the basis of base mask plate, based on this mask plate to base region surface injection and identical foreign ion in base body, implantation concentration is 10～10000 times of body area concentration, is finally made annealing treatment.The present invention passes through to change base region surface structure and doping content, makes component failure threshold value high 1.4～3.7 times.The present invention is applied to NPN device, PNP device, digital bipolar circuit, simulation bipolar circuit and digital-to-analogue/modulus circuit.
Description
Technical field
The present invention relates to the Flouride-resistani acid phesphatase technology of bipolar device.
Background technology
In the in-orbit flight course of spacecraft, with space there is reciprocal action in all kinds of charged particles (electronics and proton).These
Electronics and proton have strong impact to the performance of spacecraft electronic device, can cause ionization radiation effect, shifted radiation
Effect and single particle effect etc..These radiation effects will lead to exception or the failure of electronic device, or even ultimately result in spacecraft
There is catastrophic accident.Result of study shows that the in-orbit fault that multi-form can occur of spacecraft shortens work both at home and abroad
In the life-span, cause very big loss.Failure analysis result shows, space charged particle produces radiation to electronic device on spacecraft and damages
Hinder the major reason that effect is fault or even accident.The current development with Models For Space Science And Technology, to spacecraft electronic device
Flouride-resistani acid phesphatase index put forward higher requirement.Along with the raising of these requirements, electronic devices and components Flouride-resistani acid phesphatase principle and technology
Development just seem more important.
Bipolar transistor has good current driving ability, the linearity, low noise and excellent matching properties.They
Simulation or hydrid integrated circuit and BiCMOS circuit play the role of important, and these circuit and bipolar transistor usually should
For spatial environmentss.So, to the Radiation hardness improving bipolar device, for the selection optimizing spacecraft and design and raising
The in-orbit service reliability of spacecraft, has highly important practical meaning in engineering.
For the silicon device commonly used at present, bipolar device adopts SiO mostly2Oxide layer comes protection device surface.This
It is the formation of SiO2/ Si interface.Total dose irradiation (ionization damage) can produce capture positive charge and in SiO in oxide skin(coating)2/
Si interface produces interfacial state.Capture positive charge and interfacial state all make carrier recombination-rate surface increase, and lead to minority carrier
The reduction in sub- life-span, makes bipolar device current gain decline and drops and junction leakage increase.
After bipolar device (especially npn type bipolar transistor) irradiated damage, oxide trap positive charge can lead to send out
Penetrate knot (N+P ties) and base top layer depletion layer to base region extension (p type island region), increase and exhaust in the layer recombination current, lead to double
The superfluous base current Δ I of pole deviceB(after irradiation, base current deducts initial base current) increase, impact bipolar device can
By property and life-span.Bipolar transistor depletion layer expansion structure schematic diagram, as shown in Figure 1.
Therefore, on the premise of not affecting bipolar device electrical performance indexes, significantly reduce oxide trap positive charge pair
The impact of device performance, and effectively improve bipolar device Radiation hardness, it will the radiation hardened tool to whole integrated circuit
There is great meaning.
Content of the invention
The invention aims to solving the problems, such as that existing bipolar device Radiation hardness is poor, proposing a kind of being based on and optimizing
Device base region surface structure and the Flouride-resistani acid phesphatase bipolar device of concentration and the preparation method of this device.
Flouride-resistani acid phesphatase bipolar device of the present invention, is provided with the high-dopant concentration centered on launch site in base region surface
Area, the doping content in described high-dopant concentration area is 10～10000 times of body area doping content.
Described high-dopant concentration area is polycycle high-dopant concentration area or rectangular cells formula high-dopant concentration area.
The depth in polycycle high-dopant concentration area is the 1/20～1/5 of launch site depth, and the width of ring is 0.01～10 μm,
The minimum range far from launch site border for the internal ring border is 0.01～10 μm, and the spacing of two neighboring ring is 0.1～10 μm, ring
Number is 1～10.
The depth in rectangular cells formula high-dopant concentration area is the 1/20～1/5 of launch site depth, the length of rectangular cells
Degree and width are 0.01～10 μm, and rectangular cells are 0.01～10 μm away from launch site border minimum range, two neighboring length
The spacing of square grid is 0.1～10 μm, and the line number of grid and columns are 2～100.
The preparation method of Flouride-resistani acid phesphatase bipolar device of the present invention is：After completing base diffusion or ion implanting,
Before carrying out launch site diffusion or ion implanting, carry out radiation hardened method, described radiation hardened method passes through following steps
Realize：
Step one, on the basis of base mask plate, prepare base region surface doping mask plate；
Step 2, based on this mask plate to base region surface injection with base body in identical foreign ion, injection depth be
The 1/20～1/5 of launch site depth, implantation concentration is 10～10000 times of body area concentration；
Step 3, complete injection after, made annealing treatment, annealing temperature and base be bulk diffusion or annealing temperature during injection
Identical, annealing time when annealing time is bulk diffusion with base or injects is identical.
Base region surface doping mask plate described in above-mentioned steps one is polycycle mask plate or rectangular cells formula mask plate.
The width of the described ring of polycycle mask plate is 0.01～10 μm, the narrow spacing far from launch site border for the internal ring border
From for 0.01～10 μm, the spacing of two neighboring ring is 0.1～10 μm, and the number of ring is 1～10.
The length and width of the described rectangular cells of rectangular cells formula mask plate is 0.01～10 μm, rectangle
Grid is 0.01～10 μm away from launch site border minimum range, and the spacing of two neighboring rectangular cells is 0.1～10 μm, grid
Line number and columns be 2～100.
The present invention is in the case of the unit for electrical property parameters not affecting device, dense by the structure and doping of change base region surface
Degree, under conditions of identical irradiation dose, can substantially reduce the compound leakage current of bipolar device, especially reduce superfluous base stage electricity
Stream Δ IB, reduce the current gain degree of injury of bipolar transistor, reach the purpose improving bipolar device Radiation hardness.With
Traditional base region structure is compared, and its failure threshold of bipolar transistor with high-doped zone is high at least 1.4～3.7 times.
Brief description
Fig. 1 is the structural representation of depletion layer after common bipolar device irradiation；
Fig. 2 is the structural representation in the polycycle high-dopant concentration area of Flouride-resistani acid phesphatase bipolar device described in embodiment two；
Fig. 3 is that the structure in the rectangular cells formula high-dopant concentration area of Flouride-resistani acid phesphatase bipolar device described in embodiment four is shown
It is intended to；
Fig. 4 is the structural representation of depletion layer after the Flouride-resistani acid phesphatase bipolar device irradiation in embodiment two and four；
Fig. 5 is the variation relation with absorbed dose for the current gain of the bipolar transistor in embodiment two and four；
Fig. 6 is the experiment effect figure in embodiment ten one to ten three.
Specific embodiment
Specific embodiment one：In conjunction with Fig. 4 and Fig. 5, present embodiment is described, the Flouride-resistani acid phesphatase described in present embodiment is bipolar
Device, is provided with the high-dopant concentration area centered on launch site, the doping content in described high-dopant concentration area in base region surface
For body area doping content 10～10000 times.
The doping content in described high-dopant concentration area is the optimum range of body area doping content is 10～10000 times.
Flouride-resistani acid phesphatase bipolar device described in present embodiment in the case of the unit for electrical property parameters not affecting device, in base table
Face forms high-dopant concentration area around launch site.As shown in figure 4, after irradiated damage, the high-dopant concentration area resistance of base region surface
Hindering the extension of depletion layer, thus reducing compound quantity in depletion region for the carrier, having reduced the irradiation damage of bipolar device
Degree.This structure can greatly reduce the impact to device performance for the oxide trap positive charge, improves the anti-spoke of bipolar device
According to ability, after tested, the bipolar transistor failure threshold with above-mentioned high-dopant concentration area is high 1.4 to 3.7 times.
It is bipolar that the application of above-mentioned Flouride-resistani acid phesphatase bipolar device includes NPN device, PNP device, digital bipolar circuit, simulation
Circuit and digital-to-analogue/modulus circuit.
Specific embodiment two：In conjunction with Fig. 2 and Fig. 5, present embodiment is described, present embodiment is to embodiment one institute
The restriction further of the Flouride-resistani acid phesphatase bipolar device stated, in present embodiment, described high-dopant concentration area is that polycycle is highly doped
Concentration area.
As shown in Figure 5, compared with traditional base region structure, there is its inefficacy of bipolar transistor in polycycle high-dopant concentration area
Threshold value is high 3.7 times.
Specific embodiment three：Present embodiment is the limit further to the Flouride-resistani acid phesphatase bipolar device described in embodiment two
Fixed, in present embodiment, the depth in described polycycle high-dopant concentration area is the 1/20～1/5 of launch site depth, the width of ring
Spend for 0.01～10 μm, the minimum range far from launch site border for the internal ring border is 0.01～10 μm, the spacing of two neighboring ring is
0.1～10 μm, the number of ring is 1～10.
Specific embodiment four：It is bipolar device to the Flouride-resistani acid phesphatase described in embodiment one in conjunction with Fig. 3 and Fig. 5 present embodiment
The restriction further of part, in present embodiment, described high-dopant concentration area is rectangular cells formula high-dopant concentration area.
As shown in Figure 5, compared with traditional base region structure, there is the bipolar transistor in rectangular cells formula high-dopant concentration area
Its failure threshold is high 3.9 times.
Specific embodiment five：Present embodiment is the limit further to the Flouride-resistani acid phesphatase bipolar device described in embodiment four
Fixed, in present embodiment, the depth in described rectangular cells formula high-dopant concentration area is the 1/20～1/5 of launch site depth,
The length and width of rectangular cells is 0.01～10 μm, and rectangular cells are 0.01～10 away from launch site border minimum range
μm, the spacing of two neighboring rectangular cells is 0.1～10 μm, and the line number of grid and columns are 2～100.
Specific embodiment six：In conjunction with Fig. 5, present embodiment is described, present embodiment is the anti-spoke described in embodiment one
According to the preparation method of bipolar device, after completing base diffusion or ion implanting, before carrying out launch site diffusion or ion implanting,
Carry out radiation hardened method, described radiation hardened method is realized by following steps：
Step one, on the basis of base mask plate, prepare base region surface doping mask plate；
Step 2, based on this surface doping mask plate to base region surface injection with base body in identical foreign ion, note
Enter depth for the 1/20～1/5 of launch site depth, implantation concentration is 10～10000 times of body area concentration；
Step 3, complete injection after, made annealing treatment, annealing temperature and base be bulk diffusion or annealing temperature during injection
Identical, annealing time when annealing time is bulk diffusion with base or injects is identical.
The preparation method of the irradiation bipolar device described in present embodiment is in traditional bipolar fabrication step
On the basis of improved, complete base diffusion or ion implanting after and before carrying out launch site diffusion or ion implanting, system
Standby base region surface doping mask plate, the shape of mask plate to determine according to actual needs.Flouride-resistani acid phesphatase using said method preparation
Bipolar device can be greatly lowered the impact of the oxide trap positive charge of ionizing radiation induction, greatly strengthen bipolar device
Anti-radiation performance, is significant for the performance degradation reducing bipolar device under radiation parameter, in bipolar device Flouride-resistani acid phesphatase
In reinforcement technique application, there is obvious advantage and be widely applied prospect.
The doping content in described high-dopant concentration area is the optimum range of body area doping content is 10～10000 times.Fig. 5 gives
Go out the variation relation with absorbed dose for the Flouride-resistani acid phesphatase bipolar transistor current gain prepared using said method.Experiment is selected
Co60 irradiation bomb, close rate is 0.1rad/s, and accumulated dose is 100krad, is sentenced using current gain variable quantity for -60 as inefficacy
According to.As shown in Figure 5, compared with traditional base region structure, its failure threshold of bipolar transistor with high-doped zone is high by 1.4～
3.7 again.It can be seen that, due to the presence in base region surface high-dopant concentration area, the degree of injury of current gain can be reduced, can be lifted bipolar
Device Radiation hardness.
Specific embodiment seven：In conjunction with Fig. 5, present embodiment is described, present embodiment is to anti-described in embodiment six
The restriction further of the preparation method of irradiation bipolar device, the base region surface doping mask in present embodiment, described in step one
Version is polycycle mask plate.
As shown in Figure 5, compared with traditional base region structure, there is its inefficacy of bipolar transistor in polycycle high-dopant concentration area
Threshold value is high 3.7 times.
Specific embodiment eight：Present embodiment is the preparation method to the Flouride-resistani acid phesphatase bipolar device described in embodiment seven
Restriction further, in present embodiment, the width of the described ring of polycycle mask plate is 0.01～10 μm, internal ring border away from
The minimum range on launch site border is 0.01～10 μm, and the spacing of two neighboring ring is 0.1～10 μm, and the number of ring is 1～10
Individual.
Specific embodiment nine：In conjunction with Fig. 5, present embodiment is described, present embodiment is to anti-described in embodiment six
The restriction further of the preparation method of irradiation bipolar device, the base region surface doping mask in present embodiment, described in step one
Version is rectangular cells formula mask plate.
As shown in Figure 5, compared with traditional base region structure, there is the bipolar transistor in rectangular cells formula high-dopant concentration area
Its failure threshold is high 3.9 times.
Specific embodiment ten：Present embodiment is the preparation method to the Flouride-resistani acid phesphatase bipolar device described in embodiment nine
Restriction further, in present embodiment, the length and width of the described rectangular cells of rectangular cells formula mask plate is equal
For 0.01～10 μm, rectangular cells are 0.01～10 μm away from launch site border minimum range, two neighboring rectangular cells
Spacing is 0.1～10 μm, and the line number of grid and columns are 2～100.
Specific embodiment 11：In conjunction with Fig. 6, present embodiment is described, present embodiment is to described in embodiment one
The restriction further of Flouride-resistani acid phesphatase bipolar device, in present embodiment, described high-dopant concentration area is polycycle high-dopant concentration
Area, doping content is 10 times of body area doping content.
Co60 irradiation bomb is selected in experiment, and close rate is 0.5rad/s, and accumulated dose is 100krad, with current gain variable quantity
For -60 as failure criteria.Fig. 6 show under conditions of high-dopant concentration area exists, and bipolar transistor current gain is with suction
Receive the variation relation of dosage.It will be appreciated from fig. 6 that when the doping content in high-dopant concentration area is 10 times of body area doping content, with
Traditional base region structure is compared, and its failure threshold of bipolar transistor with high-doped zone is high 1.4 times.It can be seen that, due to base table
The presence in face high-dopant concentration area, can reduce the degree of injury of current gain, can lift bipolar device Radiation hardness.
Specific embodiment 12：In conjunction with Fig. 6, present embodiment is described, present embodiment is to described in embodiment one
The restriction further of Flouride-resistani acid phesphatase bipolar device, in present embodiment, described high-dopant concentration area is polycycle high-dopant concentration
Area, doping content is 1000 times of body area doping content.
Co60 irradiation bomb is selected in experiment, and close rate is 0.5rad/s, and accumulated dose is 100krad, with current gain variable quantity
For -60 as failure criteria.Fig. 6 show under conditions of high-dopant concentration area exists, and bipolar transistor current gain is with suction
Receive the variation relation of dosage.It will be appreciated from fig. 6 that when the doping content in high-dopant concentration area is 1000 times of body area doping content,
Compared with traditional base region structure, its failure threshold of bipolar transistor with high-doped zone is high 2.0 times.It can be seen that, due to base
The presence in surface high-dopant concentration area, can reduce the degree of injury of current gain, can lift bipolar device Radiation hardness.
Specific embodiment 13：In conjunction with Fig. 6, present embodiment is described, present embodiment is to described in embodiment one
The restriction further of Flouride-resistani acid phesphatase bipolar device, in present embodiment, described high-dopant concentration area is polycycle high-dopant concentration
Area, doping content is 10000 times of body area doping content.
Co60 irradiation bomb is selected in experiment, and close rate is 0.5rad/s, and accumulated dose is 100krad, with current gain variable quantity
For -60 as failure criteria.Fig. 6 show under conditions of high-dopant concentration area exists, and bipolar transistor current gain is with suction
Receive the variation relation of dosage.It will be appreciated from fig. 6 that when the doping content in high-dopant concentration area is 10000 times of body area doping content,
Compared with traditional base region structure, its failure threshold of bipolar transistor with high-doped zone is high 3.7 times.It can be seen that, due to base
The presence in surface high-dopant concentration area, can reduce the degree of injury of current gain, can lift bipolar device Radiation hardness.
Claims (8)
1. a kind of Flouride-resistani acid phesphatase bipolar device, is provided with the high-dopant concentration area centered on launch site, described height in base region surface
The doping content of concentration doped region is 10～10000 times of body area doping content；
Described high-dopant concentration area is polycycle high-dopant concentration area；
It is characterized in that：The depth in described polycycle high-dopant concentration area is the 1/20～1/5 of launch site depth, the width of ring
For 0.01～10 μm, the minimum range far from launch site border for the internal ring border is 0.01～10 μm, and the spacing of two neighboring ring is 0.1
～10 μm, the number of ring is 1～10.
2. a kind of Flouride-resistani acid phesphatase bipolar device, is provided with the high-dopant concentration area centered on launch site, described height in base region surface
The doping content of concentration doped region is 10～10000 times of body area doping content；
Described high-dopant concentration area is rectangular cells formula high-dopant concentration area；
It is characterized in that：The depth in described rectangular cells formula high-dopant concentration area is the 1/20～1/5 of launch site depth, long
The length and width of square grid is 0.01～10 μm, and rectangular cells are 0.01～10 μ away from launch site border minimum range
M, the spacing of two neighboring rectangular cells is 0.1～10 μm, and the line number of grid and columns are 2～100.
3. a kind of Flouride-resistani acid phesphatase bipolar device described in claim 1 preparation method it is characterised in that：Complete base diffusion or
After ion implanting, before carrying out launch site diffusion or ion implanting, carry out radiation hardened method, described radiation hardened method
Realized by following steps：
Step one, on the basis of base mask plate, prepare base region surface doping mask plate；
Step 2, based on this surface doping mask plate to base region surface injection and identical foreign ion in base body, injection is deep
Spend 1/20～1/5 for launch site depth, implantation concentration is 10～10000 times of body area concentration；
Step 3, complete injection after, made annealing treatment, annealing temperature bulk diffusion with base or inject when annealing temperature phase
With annealing time when annealing time is bulk diffusion with base or injects is identical.
4. a kind of Flouride-resistani acid phesphatase bipolar device according to claim 3 preparation method it is characterised in that：Described in step
Base region surface doping mask plate is polycycle mask plate.
5. a kind of Flouride-resistani acid phesphatase bipolar device according to claim 4 preparation method it is characterised in that：Described polycycle
The width of the ring of mask plate is 0.01～10 μm, and the minimum range far from launch site border for the internal ring border is 0.01～10 μm, adjacent
The spacing of two rings is 0.1～10 μm, and the number of ring is 1～10.
6. a kind of Flouride-resistani acid phesphatase bipolar device described in claim 2 preparation method it is characterised in that：Complete base diffusion or
After ion implanting, before carrying out launch site diffusion or ion implanting, carry out radiation hardened method, described radiation hardened method
Realized by following steps：
Step one, on the basis of base mask plate, prepare base region surface doping mask plate；
Step 2, based on this surface doping mask plate to base region surface injection and identical foreign ion in base body, injection is deep
Spend 1/20～1/5 for launch site depth, implantation concentration is 10～10000 times of body area concentration；
Step 3, complete injection after, made annealing treatment, annealing temperature bulk diffusion with base or inject when annealing temperature phase
With annealing time when annealing time is bulk diffusion with base or injects is identical.
7. a kind of Flouride-resistani acid phesphatase bipolar device according to claim 6 preparation method it is characterised in that：Described in step
Base region surface doping mask plate is rectangular cells formula mask plate.
8. a kind of Flouride-resistani acid phesphatase bipolar device according to claim 7 preparation method it is characterised in that：Described rectangle
The length and width of the rectangular cells of grid type mask plate is 0.01～10 μm, and rectangular cells are minimum away from launch site border
Distance is 0.01～10 μm, and the spacing of two neighboring rectangular cells is 0.1～10 μm, the line number of grid and columns be 2～
100.
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| CN110854179B (en) * | 2019-11-14 | 2023-04-25 | 西安微电子技术研究所 | Radiation-reinforced silicon-based bipolar transistor structure based on self-built electric field and preparation method |
| CN110828560A (en) * | 2019-11-14 | 2020-02-21 | 西安微电子技术研究所 | Base region ring-doped anti-radiation transverse PNP transistor and preparation method thereof |
| CN110828549B (en) * | 2019-11-14 | 2022-08-16 | 西安微电子技术研究所 | Guard ring doped anti-radiation transistor structure and preparation method thereof |
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| US4956688A (en) * | 1984-10-29 | 1990-09-11 | Hitachi, Ltd. | Radiation resistant bipolar memory |
| US4998155A (en) * | 1983-07-11 | 1991-03-05 | Director-General Of The Agency Of Industrial Science And Technology | Radiation-hardened semiconductor device with surface layer |
| CN1779989A (en) * | 2005-09-23 | 2006-05-31 | 中国科学院上海微系统与信息技术研究所 | Silicon FET on anti-radiation reinforced special body-contacting insulator and preparation thereof |
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| US4998155A (en) * | 1983-07-11 | 1991-03-05 | Director-General Of The Agency Of Industrial Science And Technology | Radiation-hardened semiconductor device with surface layer |
| US4956688A (en) * | 1984-10-29 | 1990-09-11 | Hitachi, Ltd. | Radiation resistant bipolar memory |
| CN1779989A (en) * | 2005-09-23 | 2006-05-31 | 中国科学院上海微系统与信息技术研究所 | Silicon FET on anti-radiation reinforced special body-contacting insulator and preparation thereof |
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| CN103872106A (en) | 2014-06-18 |
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