CN103872105B - A kind of preparation method of radiation hardened bipolar transistor - Google Patents
A kind of preparation method of radiation hardened bipolar transistor Download PDFInfo
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- CN103872105B CN103872105B CN201410135478.5A CN201410135478A CN103872105B CN 103872105 B CN103872105 B CN 103872105B CN 201410135478 A CN201410135478 A CN 201410135478A CN 103872105 B CN103872105 B CN 103872105B
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- 230000005855 radiation Effects 0.000 title claims abstract description 49
- 238000002360 preparation method Methods 0.000 title claims abstract description 28
- 238000009792 diffusion process Methods 0.000 claims abstract description 22
- 230000003647 oxidation Effects 0.000 claims abstract description 17
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 17
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052796 boron Inorganic materials 0.000 claims abstract description 12
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 11
- 239000001301 oxygen Substances 0.000 claims abstract description 11
- 239000000126 substance Substances 0.000 claims abstract description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 9
- 229910052698 phosphorus Inorganic materials 0.000 claims description 9
- 239000011574 phosphorus Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 4
- 239000002253 acid Substances 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 230000006378 damage Effects 0.000 description 10
- 210000000515 tooth Anatomy 0.000 description 10
- 230000006798 recombination Effects 0.000 description 8
- 238000005215 recombination Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 238000001259 photo etching Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 208000027418 Wounds and injury Diseases 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 208000014674 injury Diseases 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 231100000987 absorbed dose Toxicity 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000005865 ionizing radiation Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000000191 radiation effect Effects 0.000 description 2
- 238000009279 wet oxidation reaction Methods 0.000 description 2
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000003471 anti-radiation Effects 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
Abstract
The preparation method of a kind of radiation hardened bipolar transistor, belongs to electronic technology field.It is the problem low in order to solve existing bipolar transistor Radiation hardness.A kind of radiation hardened bipolar transistor, launch site is with the diagonal of base for the symmetrical square symmetry pectinate texture of line of symmetry, and this line of symmetry lateral symmetry extends outward n and rectangular teeth structure, the angle between every pair of rectangular teeth structure are 90 degree；The preparation method of above-mentioned transistor, when doped chemical diffuses to form base, the diffusion junctions degree of depth of base is between 1 μm to 2.5 μm；One layer of boron of diffusion into the surface in base；When doped chemical diffuses to form launch site, the diffusion junctions degree of depth of launch site is between 0.5 μm to 2 μm；When oxidation, it is ensured that the thickness of dry oxygen is between 1nm to 10nm, and the thickness of wet oxygen is between 200nm to 1 μm.The present invention is applicable to application and the production of commercialization Flouride-resistani acid phesphatase bipolar transistor.
Description
Technical field
The invention belongs to electronic technology field, particularly relate to a kind of radiation hardened bipolar transistor.
Background technology
Electronics and proton in space radiation environment have strong impact to the performance of spacecraft electronic device, can cause electricity
From radiation effect, displacement radiation effect and single particle effect etc., cause the exception of electronic device or malfunctioning, even ultimately result in
There is catastrophic accident in spacecraft.Therefore, improve the Radiation hardness of bipolar device, for optimizing the selection of spacecraft
With design and the service reliability in-orbit of raising spacecraft, there is highly important practical meaning in engineering.
Launch site girth/the area ratio of bipolar device is the key factor affecting its Radiation hardness.After irradiated experiment, double
The base current I of pole deviceBMainly include ideal current and radiation-induced irrational electric current.Therefore, irrational electric current is to need
Pay special attention to and improved.Non-ideal electric current occlusion body recombination current again, depletion layer recombination current and surface are multiple
Close electric current.When bipolar device is by total dose damage (ionization damage), non-ideal electric current is mainly surface recombination current.
Summary of the invention
The present invention is the problem low in order to solve existing bipolar transistor Radiation hardness, and a kind of radiation hardened of existing offer is double
The preparation method of bipolar transistor.
A kind of radiation hardened bipolar transistor, the launch site of this transistor is that left and right is right with the diagonal of base for line of symmetry
The square symmetry pectinate texture claimed, this line of symmetry lateral symmetry extends outward n to rectangular teeth structure, every pair of rectangular teeth knot
Angle between structure is 90 degree, and n is the positive integer more than 3.
The span of above-mentioned n is less than 10 more than 3.
The width of all rectangular teeth structures is the most equal.
Distance between line of symmetry the same side, adjacent two rectangular teeths is equal with the width of described rectangular teeth.
A kind of preparation method of radiation hardened bipolar transistor, this preparation method,
When doped chemical diffuses to form base, the diffusion junctions degree of depth of base is between 1 μm to 2.5 μm；
After base has spread, the diffusion into the surface in base one layer of boron or phosphorus；
When doped chemical diffuses to form launch site, the diffusion junctions degree of depth of launch site is between 0.5 μm to 2 μm；
When oxidation, it is ensured that the thickness of dry oxygen is between 1nm to 10nm, and the thickness of wet oxygen is between 200nm to 1 μm.
One layer of boron (p-type base) of the above-mentioned diffusion into the surface in base or phosphorus (N-type base), the concentration of described boron or phosphorus exists
1E17/cm3To 1E20/cm3Between.
The diffusion junctions degree of depth of above-mentioned base is 1.5 μm.
The diffusion junctions degree of depth of above-mentioned launch site is 1.2 μm.
When oxidation, the thickness of dry oxidation layer is 5.5nm.
When oxidation, the thickness of wet oxidation layer is 700nm.
A kind of radiation hardened bipolar transistor of the present invention, overcomes the launch site of bipolar transistor in prior art
Use the intrinsic thinking of rectangular pectinate texture, but do not affecting the unit for electrical property parameters of device, and ensure transmitting pole-face
Long-pending constant on the premise of, change original rectangular pectinate texture into square symmetry pectinate texture, by improving domain work
Skill design, to reduce girth and the area ratio of the launch site of bipolar device, reduces oxide trap positive charge and interfacial state to double
The impact of the compound leakage current of pole device, reduces the current gain degree of injury to bipolar transistor, reaches to improve bipolar device
The purpose of Radiation hardness；The oxide trap positive charge of ionizing radiation induction and interfacial state can be greatly lowered simultaneously to device
The impact of part performance parameter, makes the Radiation hardness of bipolar device enhance 60%-80%, transistor the most of the present invention
Failure threshold improve 2-5 times than the transistor of existing structure.
The preparation method of a kind of radiation hardened bipolar transistor of the present invention, remains traditional bipolar device technique
Most processing steps in technology and parameter, only have modified design parameter and the process of the most several technique so that system
Make processing step very simple, but the bipolar transistor using this preparation method to obtain, make with using existing common process
Similar-type products compare, its Radiation hardness and failure threshold are all significantly improved.
The present invention has broad application prospects in bipolar device radiation hardened technology, it is adaptable to commercially produce.
Accompanying drawing explanation
Fig. 1 is the structural representation in a kind of radiation hardened bipolar transistor emitter district of the present invention；
Fig. 2 is the simplification structural representation of existing conventional bipolar transistor；
Fig. 3 is the structural representation of a kind of rectangular pectination launch site in existing transistor；
Fig. 4 is after low-energy electron irradiation, and the bipolar transistor current gain of different launch sites girth/area ratio (P/A) is fallen
Number variable quantity is with the variation relation curve chart of irradiation fluence；
Fig. 5 is under same absorbent dosage conditions, and superfluous base stage leakage current is with the change of bipolar transistor emitter district girth/area ratio
Graph of relation；
Fig. 6 is the bipolar transistor current change in gain of bilateral pectinate texture launch site of the present invention and existing pectinate texture
Measure the variation relation curve chart with absorbed dose.
Detailed description of the invention
Detailed description of the invention one: illustrate present embodiment with reference to Fig. 1, a kind of radiation hardened described in present embodiment
Bipolar transistor, the launch site of this transistor is with the diagonal of base for the symmetrical square symmetry pectination of line of symmetry
Structure, this line of symmetry lateral symmetry extends outward n and rectangular teeth structure, the angle between every pair of rectangular teeth structure is 90
Degree, n is the positive integer more than 3.
Conventional bipolar transistor simplifies structural representation, as shown in Figure 2；Generally, the launch site of bipolar transistor uses rectangular
The pectinate texture of shape, as shown in Figure 3.Fig. 4 shows after low-energy electron irradiation, different launch sites girth/area ratio double
Gated transistors current gain inverse variable quantity is with the variation relation of irradiation fluence.From fig. 4, it can be seen that in identical irradiation fluence condition
Under, the launch site girth/area ratio of bipolar transistor is the least, and irradiation damage degree is the least, and Radiation hardness is the strongest.
In order to further illustrate launch site girth/area ratio impact on bipolar device anti-radiation performance, Fig. 5 gives different suction
Receiving under dosage conditions, superfluous base stage leakage current is with the variation relation of bipolar transistor emitter district girth/area ratio.As seen from Figure 5,
Launch site girth/area ratio is the biggest, and superfluous base current is the biggest, causes the degree of injury of gain to aggravate, bipolar device Flouride-resistani acid phesphatase
Ability reduces.
Visible by above-mentioned experimental result, the launch site girth/area ratio of bipolar device is affect its Radiation hardness important
Factor.After irradiated experiment, the base current of bipolar device mainly includes ideal current and radiation-induced irrational electric current.
Therefore, irrational electric current is it is important to note that and improved.Non-ideal electric current occlusion body recombination current again, exhaust
Layer recombination current and surface recombination current.When bipolar device is by total dose damage (ionization damage), non-ideal electric current is main
It it is surface recombination current.As the above analysis, launch site girth/area ratio is the least, and irradiation damage degree is the least, Flouride-resistani acid phesphatase
Ability is the strongest.Therefore, the present invention reduces the girth/area ratio of this launch site by the shape optimizing bipolar device launch site,
And then reach to be substantially reduced radiation-induced surface recombination current, improve the effect of the Radiation hardness of bipolar device.
A kind of radiation hardened bipolar transistor described in present embodiment, is not affecting the unit for electrical property parameters of device, and
On the premise of ensureing that emitter area is constant, by improving domain technological design to reduce the launch site girth area of bipolar device
Ratio.
A kind of radiation hardened bipolar transistor described in present embodiment, reduces oxide trap positive charge and interfacial state
The compound leakage current of bipolar device (is especially reduced superfluous base current, Δ IB) impact, reduce electricity to bipolar transistor
Flow enhancement degree of injury, reaches to improve the purpose of bipolar device Radiation hardness；Ionizing radiation can be greatly lowered to lure simultaneously
The oxide trap positive charge led and the interfacial state impact on device parameter performance, be obviously enhanced the Radiation hardness of bipolar device.
Detailed description of the invention two: present embodiment is to a kind of radiation hardened bipolar transistor described in detailed description of the invention one
Pipe is described further, and in present embodiment, the span of n is less than 10 more than 3.
Detailed description of the invention three: present embodiment is to a kind of radiation hardened bipolar transistor described in detailed description of the invention one
Pipe is described further, and in present embodiment, the width of all rectangular teeth structures is the most equal.
Detailed description of the invention four: present embodiment is to a kind of radiation hardened bipolar transistor described in detailed description of the invention 3
Pipe is described further, in present embodiment, and the distance between line of symmetry the same side, adjacent two rectangular teeths and institute
The width stating rectangular teeth is equal.
Detailed description of the invention five: the preparation method of a kind of radiation hardened bipolar transistor described in present embodiment, this system
Preparation Method, when doped chemical diffuses to form base, the diffusion junctions degree of depth of base is between 1 μm to 2.5 μm；
After base has spread, at one layer of boron of diffusion into the surface or the phosphorus of base；
When doped chemical diffuses to form launch site, the diffusion junctions degree of depth of launch site is between 0.5 μm to 2 μm；
When oxidation, it is ensured that the thickness of dry-oxygen oxidation layer is between 1nm to 10nm, and the thickness of wet oxidation layer is at 200nm extremely
Between 1 μm.
Present embodiment is on the basis of traditional transistor preparation method, only to during diffused base and spreading afterwards
Processing step during launch site and when aoxidizing is for further adjustments.
The process of described traditional NPN transistor preparation method is as described below:
One, substrate is prepared.
Two, buried regions is prepared.
Three, after removing whole silicon dioxide, one layer of lightly doped silicon of epitaxial growth.This epitaxial layer is as collecting zone.Whole double
Polar form integrated circuit and discrete device are just produced on this epitaxial layer.
Four, on epitaxial layer, first grow layer of silicon dioxide, then carry out secondary photoetching, etch isolation area, form sediment the most in advance
Long-pending or the corresponding impurity element of ion implanting, and spread (or annealing) again and make impurity be advanced to certain distance, formed corresponding
The isolation area of type.
Five, for reducing collector series resistance, need to prepare the contact of heavily doped respective type, carry out third time photoetching,
Etch colelctor electrode, reinject the impurity element of (or diffusion) respective type and anneal.
Six, carry out four mask again, etch region, base, in the range of this, then inject the doping unit of respective type
Element is also annealed, and diffuses to form base.
Seven, on base, grow one layer of oxide, carry out the 5th photoetching, etch region, launch site, then in this scope
The doped chemical of interior injection respective type is also annealed, and diffuses to form launch site.
Eight, after deposit silicon dioxide, carry out the 6th photoetching, etch contact window, for extraction electrode line.Contact hole
Middle splash-proofing sputtering metal aluminum forms Ohmic contact.
Nine, carry out the 7th photoetching, form interconnection metal line, last growth of passivation layer, packaging.
Transistor preparation method described in present embodiment, remains traditional bipolar device Technology, manufacturing technology steps
The simplest.Utilize Co-60 irradiation bomb to a kind of radiation hardened bipolar transistor prepared by present embodiment and existing
Transistor carries out Radiation hardness contrast test, and the close rate of described Co-60 irradiation bomb is 0.1rad/s, and accumulated dose is 100krad,
Using current gain variable quantity-60 as failure criteria, it is thus achieved that the current gain variable quantity of two kinds of bipolar transistors is with absorbed dose
Variation relation curve chart, as shown in Figure 6, it can be seen that the bipolar transistor prepared by present embodiment and biography
Transistor prepared by system technique is compared, and the failure threshold of the launch site pectinate texture of transistor prepared by present embodiment improves
2.3 again.That is: the transistor preparation method described in present embodiment obtain compared with existing preparation method beyond thought good
Technique effect.
Detailed description of the invention six: present embodiment is to a kind of radiation hardened bipolar transistor described in detailed description of the invention five
The preparation method of pipe is described further, in present embodiment, and one layer of boron or phosphorus of the described diffusion into the surface in base, described
The concentration of boron or phosphorus is at 1E17/cm3To 1E20/cm3Between.
Owing to doped chemical and the distribution thereof of base directly affect the characteristics such as device current gain, cut-off frequency, therefore inject boron
Dosage and the concentration of energy boron to be controlled at 1E17/cm3To 1E20/cm3Between, in order to reduce surface emitting knot space electricity
Lotus district area, reduces radiation damage effect.
Detailed description of the invention seven: present embodiment is to a kind of radiation hardened bipolar transistor described in detailed description of the invention five
The preparation method of pipe is described further, and in present embodiment, the diffusion junctions degree of depth of base is 1.5 μm.
Detailed description of the invention eight: present embodiment is to a kind of radiation hardened bipolar transistor described in detailed description of the invention five
The preparation method of pipe is described further, and in present embodiment, the diffusion junctions degree of depth of launch site is 1.2 μm.
Detailed description of the invention nine: present embodiment is to a kind of radiation hardened bipolar transistor described in detailed description of the invention five
The preparation method of pipe is described further, and in present embodiment, when oxidation, the thickness of dry-oxygen oxidation layer is 5.5nm.
Detailed description of the invention ten: present embodiment is to a kind of radiation hardened bipolar transistor described in detailed description of the invention five
The preparation method of pipe is described further, and in present embodiment, when oxidation, the thickness of wet-oxygen oxidation layer is 700nm.
Claims (6)
1. the preparation method of a radiation hardened bipolar transistor, it is characterised in that this preparation method,
When doped chemical diffuses to form base, the diffusion junctions degree of depth of base is between 1 μm to 2.5 μm；
After base has spread, the diffusion into the surface in base one layer of boron or phosphorus；
When doped chemical diffuses to form launch site, the diffusion junctions degree of depth of launch site is between 0.5 μm to 2 μm；
Deposit silicon dioxide time, it is ensured that the thickness of dry-oxygen oxidation layer between 1nm to 10nm, the thickness of wet-oxygen oxidation layer
Between 200nm to 1 μm,
The launch site of transistor is with the diagonal of base for the symmetrical square symmetry pectinate texture of line of symmetry, this symmetry
Line lateral symmetry extends outward n and rectangular teeth structure, the angle between every pair of rectangular teeth structure is 90 degree, and n is for being more than
The positive integer of 3.
The preparation method of a kind of radiation hardened bipolar transistor the most according to claim 1, it is characterised in that institute
Stating one layer of boron or the phosphorus of diffusion into the surface in base, the concentration of described boron or phosphorus is at 1E17/cm3To 1E20/cm3Between.
The preparation method of a kind of radiation hardened bipolar transistor the most according to claim 1, it is characterised in that base
The diffusion junctions degree of depth in district is 1.5 μm.
The preparation method of a kind of radiation hardened bipolar transistor the most according to claim 1, it is characterised in that send out
The diffusion junctions degree of depth penetrating district is 1.2 μm.
The preparation method of a kind of radiation hardened bipolar transistor the most according to claim 1, it is characterised in that
During oxidation, the thickness of dry-oxygen oxidation layer is 5.5nm.
The preparation method of a kind of radiation hardened bipolar transistor the most according to claim 1, it is characterised in that
During oxidation, the thickness of wet-oxygen oxidation layer is 700nm.
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| CN108878510B (en) * | 2017-05-10 | 2021-08-31 | 旺宏电子股份有限公司 | Semiconductor device with a plurality of semiconductor chips |
| CN108281480B (en) * | 2018-02-09 | 2022-03-04 | 哈尔滨工业大学 | Device for simultaneously generating ionization and displacement defect signals and preparation method thereof |
| CN112397572A (en) * | 2020-11-17 | 2021-02-23 | 西安微电子技术研究所 | Anti-saturation structure of transverse PNP transistor and application thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1081509A (en) * | 1965-04-07 | 1967-08-31 | Itt | Transistor |
| GB1403457A (en) * | 1973-01-02 | 1975-08-28 | Motorola Inc | Single diffused monolithic darlington circuit and manufacture thereof |
| US4460913A (en) * | 1981-10-30 | 1984-07-17 | Rca Corporation | Fast switching transistor |
| CN201243018Y (en) * | 2008-08-08 | 2009-05-20 | 无锡固电半导体股份有限公司 | PNP type high-frequency high-speed low-voltage-drop high-gain power transistor for automobile electron |
-
2014
- 2014-04-04 CN CN201410135478.5A patent/CN103872105B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1081509A (en) * | 1965-04-07 | 1967-08-31 | Itt | Transistor |
| GB1403457A (en) * | 1973-01-02 | 1975-08-28 | Motorola Inc | Single diffused monolithic darlington circuit and manufacture thereof |
| US4460913A (en) * | 1981-10-30 | 1984-07-17 | Rca Corporation | Fast switching transistor |
| CN201243018Y (en) * | 2008-08-08 | 2009-05-20 | 无锡固电半导体股份有限公司 | PNP type high-frequency high-speed low-voltage-drop high-gain power transistor for automobile electron |
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