GB1403457A - Single diffused monolithic darlington circuit and manufacture thereof - Google Patents

Single diffused monolithic darlington circuit and manufacture thereof

Info

Publication number
GB1403457A
GB1403457A GB5644773A GB5644773A GB1403457A GB 1403457 A GB1403457 A GB 1403457A GB 5644773 A GB5644773 A GB 5644773A GB 5644773 A GB5644773 A GB 5644773A GB 1403457 A GB1403457 A GB 1403457A
Authority
GB
United Kingdom
Prior art keywords
emitter
layer
base
wafer
diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5644773A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of GB1403457A publication Critical patent/GB1403457A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

1403457 Semi-conductor devices MOTOROLA Inc 5 Dec 1973 [2 Jan 1973] 56447/73 Heading H1K A monolithic Darlington transistor circuit comprises a P-type semi-conductor body 32, Fig. 3, forming the base regions of the transistors, a diffused N+ collector region 34 in one surface and common to both transistors, a first mesa type diffused emitter 42 in the opposite surface and having an aperture for a base contact 46 to the body 32 and extending to the edge of the circuit, and a second mesa type diffused emitter 40. Metal contacts 56, 50 short circuit corresponding emitter-base pairs. The spacing between the contacts 46, 50, 56 and the resistivity of the base region provide baseemitter resistors R 1 , R 2 . A monolithic Darling- ton transistor circuit is formed by doping the entire surface of a P-type semi-conductor wafer (79), Fig. 5b (not shown), with an N+ layer (72), removing parts of the layer (72) to define the mesa type emitter regions 40, 42 for four Darlington circuits sharing a common mesa type emitter region 42 with four apertures in it, heating the wafer (70) to simultaneously diffuse impurities from the N+ layer 72 to form deep emitter and collector regions 40, 42 and 34 respectively and provide the base region 32, and forming a patterned metal layer for the contacts. The wafer is laser scribed or sawed to form four separate Darlington circuits.
GB5644773A 1973-01-02 1973-12-05 Single diffused monolithic darlington circuit and manufacture thereof Expired GB1403457A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US32038773A 1973-01-02 1973-01-02

Publications (1)

Publication Number Publication Date
GB1403457A true GB1403457A (en) 1975-08-28

Family

ID=23246184

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5644773A Expired GB1403457A (en) 1973-01-02 1973-12-05 Single diffused monolithic darlington circuit and manufacture thereof

Country Status (4)

Country Link
JP (1) JPS4999489A (en)
DE (1) DE2400042A1 (en)
FR (1) FR2212693A1 (en)
GB (1) GB1403457A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2140204A (en) * 1983-05-16 1984-11-21 Ates Componenti Elettron Power transistor structure with ballast resistor
CN103872105A (en) * 2014-04-04 2014-06-18 石家庄天林石无二电子有限公司 Reinforced bipolar transistor resistant to radiation and method for preparing reinforced bipolar transistor resistant to radiation

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2140204A (en) * 1983-05-16 1984-11-21 Ates Componenti Elettron Power transistor structure with ballast resistor
CN103872105A (en) * 2014-04-04 2014-06-18 石家庄天林石无二电子有限公司 Reinforced bipolar transistor resistant to radiation and method for preparing reinforced bipolar transistor resistant to radiation
CN103872105B (en) * 2014-04-04 2016-09-14 石家庄天林石无二电子有限公司 A kind of preparation method of radiation hardened bipolar transistor

Also Published As

Publication number Publication date
FR2212693A1 (en) 1974-07-26
JPS4999489A (en) 1974-09-19
DE2400042A1 (en) 1974-07-11

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee