CN106129125B - Three ends carry the lateral constant current device and its manufacturing method of safeguard function - Google Patents
Three ends carry the lateral constant current device and its manufacturing method of safeguard function Download PDFInfo
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- CN106129125B CN106129125B CN201610602001.2A CN201610602001A CN106129125B CN 106129125 B CN106129125 B CN 106129125B CN 201610602001 A CN201610602001 A CN 201610602001A CN 106129125 B CN106129125 B CN 106129125B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 239000002184 metal Substances 0.000 claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 230000001052 transient effect Effects 0.000 claims abstract description 22
- 238000009792 diffusion process Methods 0.000 claims abstract description 16
- 238000002955 isolation Methods 0.000 claims abstract description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 17
- 229910052760 oxygen Inorganic materials 0.000 claims description 17
- 239000001301 oxygen Substances 0.000 claims description 17
- 238000002347 injection Methods 0.000 claims description 15
- 239000007924 injection Substances 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 238000012827 research and development Methods 0.000 abstract description 2
- 239000000203 mixture Substances 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000001413 cellular effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
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Abstract
The present invention provides the lateral constant current device and its manufacturing method of a kind of included safeguard function in three ends, device includes lateral current regulator diode structure and transient voltage suppressor diode structure, and lateral current regulator diode includes that substrate, the first p-type heavily doped region, the second metallic cathode, diffusion N-type well region, the second p-type heavily doped region, third p-type lightly doped district, the first N-type heavily doped region, the second N-type heavily doped region, oxide isolation layer, the first metallic cathode is lightly doped in p-type；Transient voltage suppressor diode structure includes that substrate, the first p-type heavily doped region, the second metallic cathode, diffusion N-type well region, the second N-type heavily doped region, oxide isolation layer, metal anode is lightly doped in p-type；The present invention takes the lead in puncturing when surge fluctuates and attacks constant current device, high current of releasing, and to protect current regulator diode and the LED light string that drives thereafter, improves the reliability of constant current device and whole system, area is greatly reduced, reduce research and development cost.
Description
Technical field
The invention belongs to semiconductor power device technology fields, and in particular to a kind of three ends carry the lateral type of safeguard function
Constant current device and its manufacturing method.
Background technique
Constant-current source is a kind of common electronic equipment and device, using quite extensively in electronic circuit.Constant-current source is used for
Entire circuit is protected, even if there is the situation of spread of voltage or load resistance variation very greatly, can ensure the steady of supply current
It is fixed.But a breakdown voltage high position for current regulator diode is commonly 30~100V at present, therefore asks there are breakdown voltage is lower
Topic, while the constant current that can be provided is relatively low, and most current regulator diodes can not cope with severe external environment,
It is struck by lightning or big voltage that power network fluctuation generates, the case where high current is easy to burn, lead to the peace of subsequent driving circuit
It is also difficult to ensure entirely, transient voltage suppressor diode (TVS, Transient Voltage is integrated with outside current regulator diode
Suppressor after), the Surge handling capability of current regulator diode and entire drive system can be enhanced, and reliability mentions significantly
It is high.
Summary of the invention
The technical problem to be solved by the present invention is to which transient voltage suppressor diode is integrated into current regulator diode periphery, formed
One three terminal device carrys out driving circuit, improves Surge handling capability, has further ensured the reliability of device and circuit.
Technical scheme is as follows:
A kind of three end carries the lateral constant current device of safeguard function, including lateral current regulator diode structure and transient voltage press down
Diode structure processed；
The transverse direction current regulator diode structure includes that substrate is lightly doped in p-type, and the first P below substrate is lightly doped positioned at p-type
The diffusion N-type trap above substrate interior is lightly doped in type heavily doped region, the second metallic cathode below the first p-type heavily doped region, p-type
Area, it is light that diffusion N-type well region inner upper is followed successively by the first N-type heavily doped region, the second p-type heavily doped region, third p-type from left to right
Doped region, the second N-type heavily doped region, covering p-type are lightly doped the oxide isolation layer of upper surface of substrate, cover the first N-type heavy doping
First metallic cathode in area and the second p-type heavily doped region upper surface, the metal anode above the second N-type heavily doped region；The
Two p-type heavily doped regions and the first N-type heavily doped region and the first metallic cathode form Ohmic contact, the second N-type heavily doped region and gold
Belong to anode and forms Ohmic contact；
The transient voltage suppressor diode structure includes that substrate is lightly doped in p-type, is lightly doped below substrate positioned at p-type
The diffusion above substrate interior is lightly doped in first p-type heavily doped region, the second metallic cathode below the first p-type heavily doped region, p-type
The oxygen of upper surface of substrate is lightly doped in N-type well region, the second N-type heavily doped region of right end inside diffusion N-type well region, covering p-type
Change dielectric layer, the metal anode above the second N-type heavily doped region, the second N-type heavily doped region and metal anode form ohm
Contact, the first p-type heavily doped region and the second metallic cathode form Ohmic contact.
It is preferred that the mode of the transverse direction constant current device access LED drive circuit are as follows: metal anode and alternating current pass through
Output end after rectifier bridge rectification is connected, and the first metallic cathode connects the input terminal of LED light string, the second metallic cathode and LED light string
Output end connects, and constitutes transient voltage suppressor diode circuit series-parallel with current regulator diode and LED light.
It is preferred that the junction depth of the junction depth and doping concentration of the second p-type heavily doped region and third p-type lightly doped district and
Doping concentration is different.
It is preferred that the junction depth of the junction depth and doping concentration of the second p-type heavily doped region and third p-type lightly doped district and
Doping concentration is identical, that is, is equivalent to without the second p-type heavily doped region.
It is preferred that substrate is lightly doped for p-type and the doping concentration of the first p-type heavily doped region is identical, that is, it is equivalent to not
There is the first p-type high-doped zone.
It is preferred that the doping concentration and the first p-type high-doped zone difference of substrate 8 is lightly doped in p-type.
It is preferred that semiconductor material used in device is silicon or silicon carbide.
It is preferred that it is 8 × 10 that substrate doping, which is lightly doped, in p-type14cm-3；The doping of first p-type heavily doped region is dense
Degree is 1.2 × 1019cm-3；Spreading N-type well region doping concentration is 3 × 1015cm-3, junction depth is 8 microns；Second p-type heavily doped region is mixed
Miscellaneous concentration is 2 × 1017cm-3, junction depth is 4 microns；Third p-type lightly doped district doping concentration is 3 × 1016, junction depth is 1 micron；The
One N-type heavily doped region and the second N-type heavily doped region doping concentration are 1 × 1020cm-3, junction depth is 2 microns.
The present invention also provides the manufacturing method that a kind of above-mentioned three end carries the lateral constant current device of safeguard function, including it is following
Step:
Step 1: using the P-type wafer of band the first p-type heavily doped region as substrate；Or substrate is lightly doped using p-type, then
It injects to form the first p-type heavily doped region by the back side；
Step 2: being diffused pre- oxygen before the injection of N-type well region, carry out opening etch；
Step 2: being diffused N-type well region injection, be then diffused N-type well region knot, etch extra oxide layer；
Step 3: carrying out pre- oxygen before the second p-type heavily doped region injects, carry out opening etch；
Step 4: carrying out the injection of the second p-type heavily doped region, then spread into the second p-type heavily doped region, etch extra oxygen
Change layer；
Step 5: carrying out pre- oxygen before third p-type lightly doped district is injected, carry out opening etch；
Step 6: carrying out the injection of third p-type lightly doped district and annealing, etch extra oxide layer；
Step 7: carrying out the first N-type heavily doped region and the second N-type heavily doped region injects preceding pre- oxygen, carry out opening etch；
Step 8: carrying out the first N-type heavily doped region and the injection of the second N-type heavily doped region, etch extra oxide layer；
Step 9: pre- oxygen before depositing, deposited oxide are fine and close；
Step 10: photoetching ohm hole；
Step 11: deposited metal, etching form the first metallic cathode, the second metallic cathode and metal anode.
Beneficial effects of the present invention are as follows: 1, while keeping the characteristic of former lateral constant current device, further passing through the first P
Type heavily doped region and diffusion N-type well region and the second N-type heavily doped region constitute transient voltage suppressor diode, attack in surge fluctuation
It takes the lead in puncturing when hitting constant current device, high current of releasing, to protect current regulator diode and the LED light string that drives thereafter, improve
The reliability of constant current device and whole system, 2, the present invention by a set of technique by transient voltage suppressor diode and vertical-type perseverance
Stream diode is made in a silicon substrate, and compared with external discrete transient voltage suppressor diode, area is greatly reduced, and is reduced
Research and development costs.
Detailed description of the invention
Fig. 1 (a), (b), (c) are the device junction composition of traditional both ends transverse direction respectively, current regulator diode part graphical diagram, answer
LED drive circuit；
Fig. 2 (a), (b), (c) be respectively device junction composition of the invention, current regulator diode part graphical diagram, application LED drive
Dynamic circuit；
Three ends Fig. 3 of the invention carry the positive constant current device characteristic curve of the lateral constant current device of safeguard function；
Three ends Fig. 4 of the invention carry the breakdown characteristic under the surge condition of the lateral constant current device of safeguard function；
Three ends Fig. 5 of the invention carry the technique production flow diagram of the lateral constant current device of safeguard function；
Three ends Fig. 6 of the invention carry the process simulation figure of the technique production process of the lateral constant current device of safeguard function.
1 be the first metallic cathode, 2 be oxide isolation layer, 3 be the first N-type heavily doped region, 4 be the second p-type heavily doped region, 5
It is the second N-type heavily doped region for third p-type lightly doped district, 6,7 are lightly doped substrate for diffusion N-type well region, 8 for p-type, and 9 be second
Metallic cathode, 10 be metal anode, and 11 be the first p-type heavily doped region.
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Fig. 1 is traditional vertical current regulative diode, and it is that traditional both ends are horizontal respectively that Fig. 1, which has 3 subgraphs (a), (b), (c),
To device junction composition, current regulator diode part graphical diagram, application LED drive circuit；Fig. 2 is the included protection in three ends of the invention
The lateral constant current device of function, Fig. 2 also have 3 subgraphs (a), (b), (c) be respectively traditional both ends transverse direction device junction composition,
Current regulator diode part graphical diagram, application LED drive circuit；From reference numerals it can be seen that novel three end carries safeguard function
It is the second metallic cathode 9 that lateral constant current device, which has more one end than traditional lateral current regulator diode, furthermore can from device architecture
To find out, the lateral current regulator diode that three ends of the invention carry safeguard function has had more wink than traditional lateral current regulator diode
The part of state voltage suppression diode, so the lateral current regulator diode that three ends of the invention carry safeguard function includes laterally permanent
Flow diode structure and transient voltage suppressor diode structure；
The transverse direction current regulator diode structure includes that substrate 8 is lightly doped in p-type, is lightly doped the first of 8 lower section of substrate positioned at p-type
The expansion of 8 inner upper of substrate is lightly doped in p-type heavily doped region 11, the second metallic cathode 9 of 11 lower section of the first p-type heavily doped region, p-type
N-type well region 7 is dissipated, diffusion 7 inner upper of N-type well region is followed successively by the first N-type heavily doped region 3, the second p-type heavily doped region from left to right
4, third p-type lightly doped district 5, the second N-type heavily doped region 6, covering p-type are lightly doped the oxide isolation layer 2 of 8 upper surface of substrate, cover
First metallic cathode 1 of 4 upper surface of the first N-type of lid heavily doped region 3 and the second p-type heavily doped region is located at the second N-type heavily doped region
The metal anode 10 of 6 tops；Second p-type heavily doped region 4 and the first N-type heavily doped region 3 form ohm with the first metallic cathode 1 and connect
Touching, the second N-type heavily doped region 6 and metal anode 10 form Ohmic contact；And second p-type heavily doped region 4 and third p-type be lightly doped
The introducing in area 5 has adjusted surface field to modulate surface field, improves breakdown voltage, while third p-type lightly doped district 5 can be auxiliary
It helps and exhausts N-type well region, channel is made to be easier to pinch off, rapidly enter constant current area, so that lateral current regulator diode has lower pinch off electricity
Pressure, the second deeper p-type heavily doped region 4 shorten channel length, improve the constant current of lateral current regulator diode, while two
A p-well can provide a large amount of holes, and due to charge balance, N trap concentration is accordingly provided, to further increase lateral constant current two
The constant current of pole pipe.
The transient voltage suppressor diode structure includes that substrate 8 is lightly doped in p-type, and 8 lower section of substrate is lightly doped positioned at p-type
The first p-type heavily doped region 11, the second metallic cathode 9 of the lower section of the first p-type heavily doped region 11, p-type is lightly doped on 8 inside of substrate
The diffusion N-type well region 7 of side, positioned at the second N-type heavily doped region 6 of diffusion 7 inside right end of N-type well region, substrate is lightly doped in covering p-type
The oxide isolation layer 2 of 8 upper surfaces, the metal anode 10 of the top of the second N-type heavily doped region 6, the second N-type heavily doped region 6 with
Metal anode 10 forms Ohmic contact, and the first p-type heavily doped region 11 and the second metallic cathode 9 form Ohmic contact.And
The breakdown voltage and pulse peak current of transient voltage diode can gently mix substrate 8 according to p-type and spread N-type well region 7
Doping concentration is adjusted, while the width of cellular will affect the size of transient voltage suppressor diode capacitor.
The mode of the transverse direction constant current device access LED drive circuit are as follows: after metal anode and the rectified bridge rectification of alternating current
Output end be connected, the first metallic cathode 1 connects the input terminal of LED light string, and the second metallic cathode 9 connects with LED light string output end,
Constitute transient voltage suppressor diode circuit series-parallel with current regulator diode and LED light.
The junction depth and doping concentration of second p-type heavily doped region 4 and the junction depth of third p-type lightly doped district 5 and doping concentration can
, can also be identical with difference, the junction depth and doping concentration of the second p-type heavily doped region 4 and the junction depth of third p-type lightly doped district 5 and
It is equivalent to when doping concentration is identical without the second p-type heavily doped region 4.
11 difference of doping concentration and the first p-type high-doped zone of substrate 8 is lightly doped in p-type, can also be identical, when identical etc.
It imitates in no first p-type high-doped zone 11.
Semiconductor material used in device is silicon or silicon carbide.
It is 8 × 10 that 8 doping concentration of substrate, which is lightly doped, in p-type14cm-3；First p-type heavily doped region, 11 doping concentration be 1.2 ×
1019cm-3；Spreading 7 doping concentration of N-type well region is 3 × 1015cm-3, junction depth is 8 microns；Second p-type heavily doped region, 4 doping concentration
It is 2 × 1017cm-3, junction depth is 4 microns；5 doping concentration of third p-type lightly doped district is 3 × 1016, junction depth is 1 micron；First N-type
Heavily doped region 3 and 6 doping concentration of the second N-type heavily doped region are 1 × 1020cm-3, junction depth is 2 microns.
The present invention also provides the manufacturing method that a kind of above-mentioned three end carries the lateral constant current device of safeguard function, including it is following
Step:
Step 1: using the P-type wafer of the first p-type of band heavily doped region 11 as substrate；Or substrate is lightly doped using p-type
8, then inject to form the first p-type heavily doped region 11 by the back side；
Step 2: being diffused pre- oxygen before the injection of N-type well region 7, carry out opening etch；
Step 2: being diffused the injection of N-type well region 7, be then diffused 7 knot of N-type well region, etch extra oxide layer；
Step 3: carrying out pre- oxygen before the second p-type heavily doped region 4 injects, carry out opening etch；
Step 4: carrying out the injection of the second p-type heavily doped region 4, then spread into the second p-type heavily doped region 4, it is extra to etch
Oxide layer；
Step 5: carrying out pre- oxygen before third p-type lightly doped district 5 is injected, carry out opening etch；
Step 6: carrying out the injection of third p-type lightly doped district 5 and annealing, etch extra oxide layer；
Step 7: carrying out the first N-type heavily doped region 3 and the second N-type heavily doped region 6 injects preceding pre- oxygen, carry out opening etch；
Step 8: carrying out the first N-type heavily doped region 3 and the injection of the second N-type heavily doped region 6, etch extra oxide layer；
Step 9: pre- oxygen before depositing, deposited oxide are fine and close；
Step 10: photoetching ohm hole；
Step 11: deposited metal, etching form the first metallic cathode 1, the second metallic cathode 9 and metal anode 10.
Three end of the present invention carries the working principle of the lateral constant current device of safeguard function are as follows:
Three ends carry shown in lateral constant current device access LED drive circuit such as Fig. 2 (c) of safeguard function, current regulator diode
Metal anode 10 connects hot end of the alternating current after over commutation, and the first metallic cathode 1 connects the input terminal of LED light string, the second gold medal
Belong to high current of releasing after the ground connection of cathode 9 has been surge.Under conditions of no surge, novel three end carries the cross of safeguard function
It is worked normally to the part of the current regulator diode of constant current device, the transient voltage suppressor diode portion of current regulator diode cellular periphery
Divide and do not work, as shown in the voltage-current curve of Fig. 3, as anode voltage increases, the electric current of device increases, when anode voltage is
Current regulator diode electric current reaches 3 × 10 when 10V-6A/ μm of constant current value, when anode voltage is 10 to 100V, device can guarantee cross
Properties of flow carrys out the subsequent LED light string of normal driving；When having transient state high energy impact current regulator diode and driving circuit, the first p-type
Heavily doped region 11 connects the second metallic cathode 9, and the second N-type heavily doped region 6 connects metal anode 10, therefore spreads the current potential of N-type well region 7
Substrate 8 is lightly doped higher than p-type, so substrate 8 is lightly doped for p-type and the PN junction of the diffusion composition of N-type well region 7 is reverse-biased, snowslide electricity occurs
Ground is flowed to from the second metallic cathode 9 from high current is generated, reaches high current effect of releasing, quickly becomes low resistance state from high-impedance state,
As shown in Fig. 4 voltage-current curve, when surge is through oversampling circuit, the transient voltage suppressor diode part energy quick response of device,
By the both ends clamper of device and driving circuit in the safe voltage of 160V, the current regulator diode part of device is avoided to burn, absorbed
Surge power, so that the destruction of current regulator diode and driving circuit from surge pulse.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, all those of ordinary skill in the art are completed without departing from the spirit and technical ideas disclosed in the present invention
All equivalent modifications or change, should be covered by the claims of the present invention.
Claims (8)
1. the lateral constant current device that a kind of three ends carry safeguard function, it is characterised in that: including lateral current regulator diode structure with
Transient voltage suppressor diode structure；
The transverse direction current regulator diode structure includes that substrate is lightly doped in p-type, and the first p-type weight below substrate is lightly doped positioned at p-type
The diffusion N-type well region above substrate interior is lightly doped in doped region, the second metallic cathode below the first p-type heavily doped region, p-type,
Diffusion N-type well region inner upper is followed successively by the first N-type heavily doped region, the second p-type heavily doped region, third p-type from left to right and gently mixes
Miscellaneous area, the second N-type heavily doped region, covering p-type are lightly doped the oxide isolation layer of upper surface of substrate, cover the first N-type heavily doped region
With the first metallic cathode of the second p-type heavily doped region upper surface, metal anode above the second N-type heavily doped region；2nd P
Type heavily doped region and the first N-type heavily doped region and the first metallic cathode form Ohmic contact, the second N-type heavily doped region and metal sun
Pole forms Ohmic contact；
The transient voltage suppressor diode structure includes that substrate is lightly doped in p-type, and first below substrate is lightly doped positioned at p-type
The diffusion N-type above substrate interior is lightly doped in p-type heavily doped region, the second metallic cathode below the first p-type heavily doped region, p-type
Well region, the second N-type heavily doped region of right end inside diffusion N-type well region, the oxidation that upper surface of substrate is lightly doped in covering p-type are situated between
Matter layer, the metal anode above the second N-type heavily doped region, the second N-type heavily doped region and metal anode form Ohmic contact,
The first p-type heavily doped region and the second metallic cathode form Ohmic contact.
2. the lateral constant current device that three end according to claim 1 carries safeguard function, it is characterised in that: described laterally permanent
Flow the mode of device access LED drive circuit are as follows: metal anode is connected with the output end after the rectified bridge rectification of alternating current, the first gold medal
Belong to the input terminal that cathode connects LED light string, the second metallic cathode connects with LED light string output end, constitutes a transient voltage and inhibits
The diode circuit series-parallel with current regulator diode and LED light.
3. the lateral constant current device that three end according to claim 1 carries safeguard function, it is characterised in that: the second p-type weight
The junction depth and doping concentration of doped region are different from the junction depth of third p-type lightly doped district and doping concentration.
4. the lateral constant current device that three end according to claim 1 carries safeguard function, it is characterised in that: the second p-type weight
The junction depth and doping concentration of doped region are identical as the junction depth of third p-type lightly doped district and doping concentration, that is, are equivalent to without the 2nd P
Type heavily doped region.
5. the lateral constant current device that three end according to claim 1 carries safeguard function, it is characterised in that: p-type is lightly doped
The doping concentration of substrate (8) is different with the first p-type heavily doped region.
6. the lateral constant current device that three end according to claim 1 carries safeguard function, it is characterised in that: device used half
Conductor material is silicon or silicon carbide.
7. the lateral constant current device that three end according to claim 1 carries safeguard function, it is characterised in that: p-type is lightly doped
Substrate doping is 8 × 1014cm-3；First p-type heavily doped region doping concentration is 1.2 × 1019cm-3；Spread N-type well region doping
Concentration is 3 × 1015cm-3, junction depth is 8 microns；Second p-type heavily doped region doping concentration is 2 × 1017cm-3, junction depth is 4 microns；
Third p-type lightly doped district doping concentration is 3 × 1016, junction depth is 1 micron；First N-type heavily doped region and the second N-type heavily doped region
Doping concentration is 1 × 1020cm-3, junction depth is 2 microns.
8. the manufacturing method of the lateral constant current device of safeguard function is carried to three ends described in 7 any one according to claim 1,
Characterized by the following steps:
Step 1: using the P-type wafer of band the first p-type heavily doped region as substrate；Or substrate is lightly doped using p-type, then pass through
The back side is injected to form the first p-type heavily doped region；
Step 2: being diffused pre- oxygen before the injection of N-type well region, carry out opening etch；
Step 2: being diffused N-type well region injection, be then diffused N-type well region knot, etch extra oxide layer；
Step 3: carrying out pre- oxygen before the second p-type heavily doped region injects, carry out opening etch；
Step 4: carrying out the injection of the second p-type heavily doped region, then spread into the second p-type heavily doped region, etch extra oxide layer；
Step 5: carrying out pre- oxygen before third p-type lightly doped district is injected, carry out opening etch；
Step 6: carrying out the injection of third p-type lightly doped district and annealing, etch extra oxide layer；
Step 7: carrying out the first N-type heavily doped region and the second N-type heavily doped region injects preceding pre- oxygen, carry out opening etch；
Step 8: carrying out the first N-type heavily doped region and the injection of the second N-type heavily doped region, etch extra oxide layer；
Step 9: pre- oxygen before depositing, deposited oxide are fine and close；
Step 10: photoetching ohm hole；
Step 11: deposited metal, etching form the first metallic cathode, the second metallic cathode and metal anode.
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| JP2008282879A (en) * | 2007-05-08 | 2008-11-20 | Rohm Co Ltd | Semiconductor device and manufacturing method thereof |
| CN103400863A (en) * | 2013-07-03 | 2013-11-20 | 电子科技大学 | Transverse constant current diode |
| CN105047724A (en) * | 2015-09-09 | 2015-11-11 | 电子科技大学 | Transverse current regulator diode and manufacturing method thereof |
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| CN103400863A (en) * | 2013-07-03 | 2013-11-20 | 电子科技大学 | Transverse constant current diode |
| CN105047724A (en) * | 2015-09-09 | 2015-11-11 | 电子科技大学 | Transverse current regulator diode and manufacturing method thereof |
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