CN106353666B - SOI NMOSFET's60The response of Co gamma Rays derives and derives test method - Google Patents
SOI NMOSFET's60The response of Co gamma Rays derives and derives test method Download PDFInfo
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Abstract
The present invention provides a kind of SOI NMOSFET's60The response of Co gamma Rays derives and derives test method, under extremely low electric field, to the two pieces SOI NMOSFET under same structure and process conditions, a progress X-ray, another progress60Co gamma Rays；Compare X-ray with60The ratio between threshold voltage shift as caused by oxide trapped charge extracts dosage enhancement factor DEF under two kinds of Co gamma-rays radiation；By the irradiation dose level of X-ray test data multiplied by DEF, by threshold voltage shift amount caused by irradiation multiplied by the factor 0.7, to obtain60The gamma-ray rdaiation response of Co.The scheme of the invention application limitation is small, Δ VthIt derives more acurrate；It can save60The source Co largely radiates test, conveniently and efficiently provides the advantage of feedback to substantially reduce experimentation cost and play X-ray energy, improves the efficiency of research and development.
Description
Technical field
The present invention relates to a kind of SOI NMOSFET's60The response of Co gamma Rays derives and derives test method, especially
Be related to it is a kind of suitable for semiconductor components and devices to SOI NMOSFET's60The derivation that is derived of response of Co gamma Rays and
Derive test method.
Background technique
For a long time, the accumulated dose ionising radiation test of semiconductor components and devices is always using the source Co as radiation source.The U.S.
Military testing standard MIL-STD-883C is also provided60Co gamma-rays is the standard testing source of integral dose radiation test.But large size Co
Source can only use naturally radioactive60Co substance, big to environmental hazard, radiation dose rate is relatively low, and radiated time is long, thus cannot
Meet Acceleration study and carry out the requirement of irradiation test to single silicon wafer grade wafer, being not suitable for especially manufacturing enterprise on a large scale makes
With.
And X-ray has a safe ready as radiation source, dosage rate precise control and range is wide, can carry out silicon wafer grade
Test and can be tested in the production line, can substantially reduce the cost of encapsulation, test, transport, improve efficiency of research and development etc.
Advantage is particularly suitable for radiation hardened screening.
Therefore, attempt to derive using the rdaiation response under device X-ray radiation its60Response becomes under Co gamma Rays
One direction of foreign study.If this derivation is feasible, this safer convenient and fast radiation of X-ray not only can use
Source carries out integral dose radiation test, and can be according to derivation60Co test result provides space radiation assessment, thus has
Important meaning.
It is existing to be existed using X-ray radiation derivation device for SOI NMOSFET60Two kinds responded under Co gamma Rays
Method: first method is integral dose radiation caused by Schwank et al. is mentioned in the literature using X-ray under higher doses
Response is to estimate60Responded caused by Co gamma-rays, using than60The X-ray that Co dose value is higher by 60% or 40% dose value is surveyed
Test result is estimated.However the result ratio of this method estimation60Actual damage caused by Co is serious.Further for different knots
The device ratio produced under structure, different technology conditions is different, therefore is hardly resulted in completely according to simple proportionate relationship merely
The result of meaning.Another method is to improve the electric field of SOI device buried oxide layer under X-ray radiation to make to improve its charge yield
Two kinds of charges for radiating lower buried oxide layer accumulation are equal.This method needs to add biasing in the device substrate of X-ray radiation, however
How high biasing is added but to be difficult to determine.Therefore, it is difficult to estimate that X-ray arrives under all bias conditions by this method60Co γ is penetrated
The damage of line.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of application limitation is small, more accurate SOI NMOSFET is derived
's60The response of Co gamma Rays derives and derives test method.
The technical solution adopted by the invention is as follows: a kind of SOI NMOSFET60Co gamma Rays respond derivation method,
Method particularly includes: under extremely low electric field, to the two pieces SOI NMOSFET under same structure and process conditions, a progress X is penetrated
Line, another progress60Co gamma Rays；Compare X-ray with60Drawn under two kinds of Co gamma-rays radiation by oxide trapped charge
The ratio between threshold voltage shift risen extracts dosage enhancement factor DEF；By the irradiation dose level of X-ray test data multiplied by DEF,
Threshold voltage shift amount caused by irradiating is multiplied by the factor 0.7, to obtain60The gamma-ray rdaiation response of Co；
The extremely low electric field is the electric field strength that electric field is less than 0.05MV/cm.
There is safe ready as radiation source using X-ray, dosage rate precise control and range is wide is able to carry out silicon wafer grade
Test and can be tested in the production line, can substantially reduce the cost of encapsulation, test, transport, improve efficiency of research and development
Etc. advantages.The test that X-ray replaces the source Co to carry out silicon wafer grade can improve efficiency of research and development, be particularly suitable for radiation hardened screening.
Under extremely low electric field (< 0.05MV/cm), charge yield caused by X-ray and60Co gamma-rays reaches unanimity.This is
Since oxide layer is insensitive to radiating under extremely low electric field, Most electronic-hole of generation is radiated to all again multiple in situ
It closes, the hole escaped is seldom.Under this condition X-ray and60Charge yield caused by Co gamma Rays is equal, then causing at this time
The different sole cause of device oxide trapped charge amount is exactly Dose Enhancement Effects, thus be can use under two kinds of radiation by oxygen
Change the ratio between threshold voltage shift amount caused by layer trapped charge and extracts dosage enhancement factor DEF.
The x-ray radiation source is the x-ray radiation source of 10keV.
ON biasing under, comparison X-ray with60Two kinds of Co gamma-rays radiate lower Δ VotWith the variation relation extractant of dosage
Measure enhancement factor DEF.
It is biased as added by positive grid under ON biasing and buried oxide layer is had little effect, thus buried oxide layer internal electric field satisfaction is less than
0.05MV/cm.Therefore for ON biasing for, can by comparison X-ray with60Co gamma-rays Δ VotWith the variation relation of dosage
Extract dosage enhancement factor DEF.
A kind of SOI NMOSFET's60The response of Co gamma Rays derives test method, method particularly includes: with SOI
NMOSFET device in X-ray and60Under Co gamma Rays, the spoke under ON biasing, PG biasing and OFF bias conditions is respectively adopted
Response data is penetrated as analysis foundation, by X-ray and60The threshold voltage shift total amount that Co gamma-rays is done experiment carries out charge point
From obtaining oxide-trapped charge to the contribution margin Δ V of threshold voltage shiftotWith interfacial state to the contribution margin of threshold voltage shift
ΔVit, and then obtain Δ VotWith the variation relation of total radiation dose；Under ON bias conditions, by two kinds of rays (X-ray and60Co gamma-rays) radiate lower Δ VotDosage enhancement factor DEF is extracted with the variation relation of total radiation dose；By X-ray test number
According to irradiation dose level multiplied by DEF, by threshold voltage shift amount caused by irradiation multiplied by the factor 0.7, to obtain60Coγ
The rdaiation response of ray；Using the experimental data under PG biasing and OFF biasing as foundation, the dosage extracted under ON bias condition is verified
The reasonability of enhancement factor, and responded and derived by X-ray radiation60The entire derivation method accuracy of Co gamma Rays response；
The extremely low electric field is the electric field strength that electric field is less than 0.05MV/cm.
Oxide-trapped charge is to escape initially compound hole to be oxidized a layer direct result for trap capture, carries out charge
After separation, it will be able to which the interference for excluding interfacial state determines contribution of the oxide charge to threshold voltage shift.
The x-ray radiation source is the x-ray radiation source of 10keV.
ON biasing under, comparison X-ray with60Two kinds of Co gamma-rays radiate lower Δ VotWith the variation relation extractant of dosage
Measure enhancement factor DEF.
Compared with prior art, the beneficial effects of the present invention are: application limitation is small, Δ VthIt derives more acurrate；It can save
It goes60The source Co largely radiates test, conveniently and efficiently provides the excellent of feedback to substantially reduce experimentation cost and play X-ray energy
Gesture improves the efficiency of research and development.Although still needing to carry out primary60Co test, as long as however device architecture and process conditions are constant, herein
Later60Co test just passes through the direct derivation of X-ray experimental data using this method.This method is implemented simply, and passes through reality
Very high precision can be reached by testing data verification.The it is proposed of test method is X-ray substitution60Co gamma-rays carries out integral dose radiation examination
It tests and provides strong support, there is realistic meaning.
Detailed description of the invention
Fig. 1 is under ON biasing60Oxide charge and interfacial state are to SOI NMOSFET backgate threshold value electricity under Co gamma-ray irradiation
Press the contribution margin schematic diagram of drift.
Fig. 2 is the Δ V of two kinds of radiation under ON bias conditionotRelation schematic diagram between Equilibrium dose.
Fig. 3 is the Δ V that the X-ray verified under PG biasing derives in the specific embodiment of the inventionotWith the change of accumulated dose
Change relationship with60The comparison of Co gamma-rays curve.
Fig. 4 is the Δ V that the X-ray verified under OFF biasing derives in the specific embodiment of the inventionotWith accumulated dose
Variation relation with60The comparison of Co gamma-rays curve.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that described herein, specific examples are only used to explain the present invention, not
For limiting the present invention.
Any feature disclosed in this specification (including abstract and attached drawing) unless specifically stated can be equivalent by other
Or the alternative features with similar purpose are replaced.That is, unless specifically stated, each feature is a series of equivalent or class
Like an example in feature.
Specific embodiment 1
A kind of SOI NMOSFET's60Co gamma Rays respond derivation method, method particularly includes: it is right under extremely low electric field
Two pieces SOI NMOSFET under same structure and process conditions, a progress X-ray, another progress60Co gamma Rays；
Compare X-ray with60The ratio between threshold voltage shift as caused by oxide trapped charge extracts dosage under two kinds of Co gamma-rays radiation
Enhancement factor DEF；By the irradiation dose level of X-ray test data multiplied by DEF, threshold voltage shift amount caused by irradiation is multiplied
With the factor 0.7, to obtain60The gamma-ray rdaiation response of Co；
The extremely low electric field is the electric field strength that electric field is less than 0.05MV/cm.
Specific embodiment 2
On the basis of specific embodiment 1, the x-ray radiation source is the x-ray radiation source of 10keV.
Specific embodiment 3
On the basis of specific embodiment 1 or 2, ON biasing under, comparison X-ray with60Two kinds of Co gamma-rays radiate lower Δ
VotDosage enhancement factor DEF is extracted with the variation relation of dosage.
It is biased as added by positive grid under ON biasing and buried oxide layer is had little effect, thus buried oxide layer internal electric field satisfaction is less than
0.05MV/cm.Therefore for ON biasing for, can by comparison X-ray with60Co gamma-rays Δ VotWith the variation relation of dosage
Extract dosage enhancement factor DEF.
Specific embodiment 4
A kind of SOI NMOSFET's60The response of Co gamma Rays derives test method, method particularly includes: with SOI
NMOSFET device in X-ray and60Under Co gamma Rays, the spoke under ON biasing, PG biasing and OFF bias conditions is respectively adopted
Response data is penetrated as analysis foundation, by X-ray and60The threshold voltage shift total amount that Co gamma-rays is done experiment carries out charge point
From obtaining oxide-trapped charge to the contribution margin Δ V of threshold voltage shiftotWith interfacial state to the contribution margin of threshold voltage shift
ΔVit, and then obtain Δ VotWith the variation relation of total radiation dose；Under ON bias conditions, by two kinds of rays (X-ray and60Co gamma-rays) radiate lower Δ VotDosage enhancement factor DEF is extracted with the variation relation of total radiation dose；By X-ray test number
According to irradiation dose level multiplied by DEF, by threshold voltage shift amount caused by irradiation multiplied by the factor 0.7, to obtain60Coγ
The rdaiation response of ray；Using the experimental data under PG biasing and OFF biasing as foundation, the dosage extracted under ON bias condition is verified
The reasonability of enhancement factor, and responded and derived by X-ray radiation60The entire derivation method accuracy of Co gamma Rays response；
The extremely low electric field is the electric field strength that electric field is less than 0.05MV/cm.
Specific embodiment 5
On the basis of specific embodiment 4, the x-ray radiation source is the x-ray radiation source of 10keV.
Specific embodiment 6
On the basis of specific embodiment 4 or 5, ON biasing under, comparison X-ray with60Two kinds of Co gamma-rays radiate lower Δ
VotDosage enhancement factor DEF is extracted with the variation relation of dosage.
Specific embodiment 7
On the basis of one of specific embodiment 4 to 6, implement the content of specific embodiment 1.
Separation of charge is carried out to the buries oxide layer total electrical charge for causing SOI NMOSFET backgate threshold voltage shift first.Root
According to CMOS/SOI device Study on Irradiation Effects it is found that radiating the oxidation inducted after accumulated dose ionizing radiation, in buries oxide layer
Object trapped charge and heterointerface state charge can all cause transistor backgate threshold voltage shift.For NMOSFET, oxide trap electricity
The accumulation of lotus can be such that threshold voltage reduces, and the effect of interfacial state and the effect of oxide charge are on the contrary, be to increase threshold voltage.
Oxide-trapped charge is to escape initially compound hole to be oxidized a layer direct result for trap capture, after carrying out separation of charge,
The interference that can exclude interfacial state determines contribution of the oxide charge to threshold voltage shift.MOS transistor after separation irradiation
Oxide-trapped charge and the most common method of heterointerface state charge be Asia that Winokur and McWhorter et al. grow up
Threshold I-V technology.Under ON bias condition60The result of SOI NMOSFET separation of charge is as shown in Figure 1 under Co gamma-ray irradiation.Fig. 1
Middle X-axis is that irradiation dose is horizontal, and Y-axis is the drift value of threshold voltage, Δ VthFor the total amount of threshold voltage shift, Δ VotFor oxygen
Contribution margin of the compound trapped charge to threshold voltage shift, Δ VitIt is interfacial state to the contribution margin of threshold voltage shift.
By X-ray and60Co gamma-rays is to the Analysis on Mechanism of SOI device ionization radiation effect it is found that two kinds radiation-induced
The difference of oxide layer stored charge amount can be attributed to charge yield (escaping initially compound ratio in hole) and Dose Enhancement Effects
It is caused.Due to Dose Enhancement Effects, the absorbed dose of oxide layer is higher after X-ray radiation, to generate more electron-holes
It is right, however under certain current field condition, the electron-hole pair of generation is escaped initially compound ratio and is but lower than60Co γ is penetrated
Line.Dose enhancement factors and initial complex effect for X-ray and60Total dose damage caused by Co gamma-rays is in the opposite direction
It works, Dose enhancement factors make the rdaiation response of X-ray more severe, and initially complex effect makes60The response of Co gamma Rays
Influence it is more serious.It is actually any in two kinds of effects more to get the upper hand, structure difference, radiation condition different for manufacturing process
The different situations such as difference, result be not also identical.Therefore need to measure what both effects generated device rdaiation response respectively
It influences, and then the rdaiation response as caused by X-ray derives60The gamma-ray rdaiation response of Co.
Under extremely low electric field, comparison X-ray with60The threshold value as caused by oxide trapped charge under two kinds of Co gamma-rays radiation
The ratio between voltage drift extracts dosage enhancement factor DEF；By the irradiation dose level of X-ray test data multiplied by DEF, irradiation is made
At threshold voltage shift amount multiplied by the factor 0.7, obtain60The gamma-ray rdaiation response of Co.
Under extremely low electric field (< 0.05MV/cm), charge yield caused by X-ray and60Co gamma-rays reaches unanimity.This is
Since oxide layer is insensitive to radiating under extremely low electric field, Most electronic-hole of generation is radiated to all again multiple in situ
It closes, the hole escaped is seldom.Under this condition X-ray and60Charge yield caused by Co gamma Rays is equal, then causing at this time
The different sole cause of device oxide trapped charge amount is exactly Dose Enhancement Effects, thus be can use under two kinds of radiation by oxygen
Change the ratio between threshold voltage shift amount caused by layer trapped charge and extracts dosage enhancement factor DEF.
ON biasing under, comparison X-ray with60Two kinds of Co gamma-rays radiate lower Δ VotWith the variation relation extractant of dosage
Measure enhancement factor DEF.
It is biased as added by positive grid under ON biasing and buried oxide layer is had little effect, thus buried oxide layer internal electric field satisfaction is less than
0.05MV/cm.Therefore for ON biasing for, can by comparison X-ray with60Co gamma-rays Δ VotWith the variation relation of dosage
Extract dosage enhancement factor DEF.
As shown in Fig. 2, under ON bias condition X-ray with60Two kinds of Co gamma-rays radiation are as caused by buried oxide layer trapped charge
The Δ V of backgate threshold voltage shiftotThe example of relationship between Equilibrium dose.DEF=1.60 obtained in exemplary diagram.
It is worth noting that, Dose Enhancement Effects are a kind of interfacial effects, it is only related with oxidated layer thickness, device architecture,
It is unrelated with oxide layer internal electric field；And initially complex effect is related with electric field but unrelated with oxidated layer thickness, device architecture.Thus
For same device, its dose enhancement is constant under 10keV X-ray radiation.
According under ON bias condition, extract DEF=1.60 (X-ray/60Co gamma-rays), it can use the examination of X-ray
Data are tested to be derived under other various bias conditions60The gamma-ray rdaiation response of Co.It can multiplied by Equilibrium dose level by DEF
To obtain actual absorption dosage level.Under other bias conditions based on experience value and data, the charge under x-ray bombardment
Yield is about6070% under the irradiation of Co gamma-rays.Thus by the abscissa of X-ray test data (irradiation dose is horizontal) multiplied by
DEF, then threshold voltage shift amount (ordinate) caused by irradiation can be obtained multiplied by the factor 0.760The gamma-ray radiation of Co is rung
It answers.
By taking the experimental data under PG biasing as an example.According to Dose enhancement factors factor D EF=1.60, then X-ray is in Equilibrium dose
Actual absorption dosage difference when level is respectively 55.56krad (SiO2), 0.28Mrad (SiO2) and 0.56Mrad (SiO2)
For 88.9krad (SiO2), 0.45Mrad (SiO2) and 0.9 Mrad (SiO2).PG biasing under, buried oxide layer internal electric field it is higher (>
0.3MV/cm), at this time two kinds to radiate lower charge yield differences obvious, take the charge yield of X-ray to be60The 70% of Co.It examines respectively
After the influence for considering two kinds of effects, we by X-ray derive Δ VotWith the variation relation and reality of accumulated dose60Co gamma-rays is bent
Line is contrasted, as shown in Figure 3.In the same way, it is derived using the experimental data under OFF biasing, as a result such as Fig. 4
It is shown.Curve and 60Co the actual curve comparison derived by the X-ray experimental data twice under different bias conditions can
See, result and the actual value of derivation can coincide well, so that demonstrating the Dose enhancement factors factor extracted under ON bias condition is
Reasonably, it is responded and is derived by X-ray radiation60The entire derivation method precision of Co gamma Rays response is higher.
Claims (6)
1. a kind of SOI NMOSFET's60Co gamma Rays respond derivation method, method particularly includes: under extremely low electric field, to same
Two pieces SOINMOSFET under spline structure and process conditions, a progress X-ray radiation, another progress60Co gamma Rays；
Compare X-ray with60The ratio between threshold voltage shift as caused by oxide trapped charge extracts dosage under two kinds of Co gamma-rays radiation
Enhancement factor DEF；By the irradiation dose level of X-ray test data multiplied by DEF, threshold voltage shift amount caused by irradiation is multiplied
With the factor 0.7, to obtain60The gamma-ray rdaiation response of Co；
The extremely low electric field is the electric field strength that electric field is less than 0.05MV/cm.
2. rdaiation response derivation method according to claim 1, x-ray radiation source is the x-ray radiation source of 10keV.
3. rdaiation response derivation method according to claim 1 or 2, under ON biasing, comparison X-ray with60Co gamma-rays
Two kinds radiate lower Δ VotDosage enhancement factor DEF is extracted with the variation relation of dosage；Wherein, Δ VotFor oxide-trapped charge
To the contribution margin of threshold voltage shift.
4. a kind of SOI NMOSFET's60The response of Co gamma Rays derives test method, method particularly includes: with SOI NMOSFET
Device in X-ray and60Under Co gamma Rays, the rdaiation response number under ON biasing, PG biasing and OFF bias conditions is respectively adopted
According to as analysis foundation, by X-ray and60The threshold voltage shift total amount that Co gamma-rays is done experiment carries out separation of charge, obtains
Contribution margin Δ V of the oxide-trapped charge to threshold voltage shiftotWith interfacial state to the contribution margin Δ V of threshold voltage shiftit,
And then obtain Δ VotWith the variation relation of total radiation dose；Under ON bias conditions, pass through Δ V under two kinds of ray radiationsotWith spoke
The variation relation of firing association's dosage extracts dosage enhancement factor DEF；It, will by the irradiation dose level of X-ray test data multiplied by DEF
Threshold voltage shift amount is multiplied by the factor 0.7 caused by irradiation, to obtain60The gamma-ray rdaiation response of Co；With PG biasing and OFF
Experimental data under biasing is foundation, verifies the reasonability for the Dose enhancement factors factor extracted under ON bias condition, and by X-ray spoke
Response is penetrated to derive60The entire derivation method accuracy of Co gamma Rays response；
Described two rays be X-ray and60Co gamma-rays.
5. rdaiation response according to claim 4 derives test method, the x-ray radiation source is the X-ray spoke of 10keV
Penetrate source.
6. rdaiation response according to claim 4 or 5 derives test method, under ON biasing, comparison X-ray with60Coγ
Two kinds of ray radiate lower Δ VotDosage enhancement factor DEF is extracted with the variation relation of dosage.
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| CN112379240B (en) * | 2020-11-13 | 2024-04-05 | 中国科学院新疆理化技术研究所 | Method for evaluating total dose radiation performance of radiation-resistant reinforced SOI material |
| CN113568028B (en) * | 2021-07-26 | 2023-12-15 | 中国科学院新疆理化技术研究所 | Aging screening method of satellite radiation dose sensor |
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