RU2495446C2 - Method to test semiconductor cmos/soi of lsi technology for resistance to effects of single failures from impact of heavy charged particles of space - Google Patents

Abstract

FIELD: testing equipment.

SUBSTANCE: in the method for testing of semiconductor CMOS/SOI of LSI technology for resistance to effects of single faults from impact of heavy charged particles (HCP) of space by means of radiation of a limited LSI sample with pulse ionising radiation, radiation is produced by gamma-neutron radiation of a pulse nuclear reactor (PNR) with average energy of 1.0-3.0 MeV or pulse X-ray radiation of electrophysical plants (EPP) with an equivalent dose, causing generation of a radiation-induced charge equal with HCP in the sensitive LSI volume, and for detection of resistance to HCP impact with the threshold value of linear losses of energy LETth in the range from units to a hundred of MeV·cm²/mg, the value of coefficient of relative efficiency RDEF (Relative Dose Enhancement Factor) is used on impact of full absorbed dose of X-ray or gamma-radiation in respect to the LHTTH value using the provided ratio.

EFFECT: reduced cost and duration of tests for radiation resistance, higher reliability of test results.

7 cl, 6 dwg, 8 tbl

Description

The invention relates to methods for testing semiconductor devices for resistance to the effects of heavy charged particles (TZZ, or ions) of various energies of outer space (KP) according to the results of tests for resistance to pulsed reactor gamma-neutron radiation or pulsed x-ray radiation from electrical installations (x-ray generators, linear accelerators, cyclotrons) using relative efficiency coefficients (COE) of given levels of ionizing radiation (AI) to emissions of modeling installations (MU).

A known method for determining the resistance of semiconductor devices to electronic or proton radiation KP, which consists in irradiating devices with an electron or proton beam on a linear accelerator or cyclotron and measuring parameters before and after irradiation [1].

The disadvantage of this method is the high cost of such tests and the low availability of installations that create protons (electrons) of a certain energy range.

A special place in the study of the stability of large integrated circuits (LSI) of the technology “complementary structures“ metal-dielectric-semiconductor-on-dielectric ”(CMOS / KND, hereinafter MIS) is occupied by the effects of failures of single phenomena (Single Event Upset = SEU), which NASA was defined as “radiation-induced errors in microelectronic circuits caused by the loss of energy by charged particles (mainly from Earth’s natural radiation belts (ERPZs) or cosmic rays) when they travel through the medium through which they penetrate Riding the formation of electron-hole pairs. " In contrast to catastrophic failures, SEUs form mainly intermittent (non-stationary) failures, the result of which is the restoration of the instrument's operability or rebooting to its original state. The effects of SEUs can be observed in analog, digital and optical elements or in the corresponding interface connections of electronic circuits. The effects of SEUs can usually be manifested in the form of pulse transients in logical or supporting circuits, or in the form of a change in the logical state in memory cells or memory registers [2].

The effects of SEU are classified into three groups (in order of importance) [2, 4]:

1. Single event effect (SEE) - the effect of a single failure;

2. Single event latchup (SEL) - the effect of a single “latch”, or the thyristor effect (“soft” - reversible or “hard” - irreversible errors);

3. Single event burnout (SEB) - the effect of a single burning ("hard" errors) [3].

Single Failure Effects (SEE), in turn, are also subdivided into “soft” and “hard” errors. Residual "hard" errors appear in a complex manner.

The sources of SEE in sensitive LSI volumes are high-energy protons, electrons and TZZ, which with a certain probability can cause nuclear reactions with subsequent ionization of the material by fission fragments, and TZZ, which cause "charge funnels" along the propagation track (Figure 1), which creates , in turn, or a transition process or permanent destructive effects.

для SEE, которое является характеристикой чувствительности (стойкости) испытываемой БИС при облучении моноэнергетическим и мононаправленным пучком частиц j-го сорта (Фиг.3):Tests of the elemental component base (ECB) on the accelerators forming the TZC, in accordance with the procedure presented in Figure 2, allow you to set the absolute value of the cross section $${\sigma }_{sat}^{\left(j\right)}$$

for SEE, which is a characteristic of the sensitivity (resistance) of the tested LSI under irradiation with a monoenergetic and mono-directional beam of particles of the jth grade (Figure 3):

, $${\sigma }_{sat}^{\left(j\right)}=\frac{\nu }{N_{\left(J\right)}/S}$$

,

для SEE при воздействии частиц j-го сорта в зависимости от их энергии и углов падения (полярного θ и азимутального φ) и могут быть непосредственно использованы для прогнозирования количества или частоты SEE ν при воздействии изотропных (θ, φ=const) потоков ТЗЧ разного сорта и энергии (Е≠const) КП по формуле:where: ν is the number (or frequency, s ^-1 ) of SEE arising in the LSI during irradiation; N _(j) = Ф × cosθ - the number (or intensity) of particles of a given type from their total flux Ф (or total flux density, cm ^{-2 ·} s ^-1 ), cm ^-2 (Figure 4), which falls at an angle in on the surface of the ECB element having an area S (Figure 5). The energy characteristics of accelerator particles are closest to the characteristics of the TZZ KP and, as a rule, have high penetrating power. Such tests make it possible to establish the most accurate absolute cross-sectional values. $${\sigma }_{sat}^{\left(j\right)}\left(E,\theta ,\varphi \right)$$

for SEE when exposed to particles of the jth grade, depending on their energy and incidence angles (polar θ and azimuthal φ) and can be directly used to predict the amount or frequency of SEE ν when exposed to isotropic (θ, φ = const) TZ flows of different types and energy (Е ≠ const) KP according to the formula:

, $$\nu ={\displaystyle \sum _j{\displaystyle \int {\displaystyle \int {\displaystyle \int {\sigma }_{ion}^{\left(j\right)}}\left(E,\theta ,\varphi \right)}{F}_j\left(E\right)dE\cos \theta \sin \varphi d\theta d\varphi }}$$

,

where: F _j (E) is the differential energy spectrum of the directed flow, in units [cm ^-2. sr ^-1 (MeV / nucleon) ^-1 ], or flux density in units [cm ^-2. avg ^-1 (MeV / nucleon) ^-1. s ^-1 ], particles of the jth grade. Here “cf” means sterradian (unit of solid angle).

на ускорителях частиц в зависимости от нескольких параметров (сорта частиц, их энергии и углов падения) требует значительных временных и материальных затрат и поэтому практически не может быть непосредственно применено на практике для оценки радиационной стойкости (PC) элементов ЭКБ, предназначенных для бортовой радиоэлектронной аппаратуры космического аппарата. Для оптимизации процесса испытаний и сокращения их объема до «разумных» пределов могут быть использованы МУ, в том числе ИЯР и ЭФУ, генерирующие импульсное рентгеновское излучение (РИ).Definition of Values $${\sigma }_{ion}^{\left(j\right)}\left(E,\theta ,\varphi \right)$$

on particle accelerators, depending on several parameters (particle type, their energy and angle of incidence), it requires significant time and material costs and therefore can hardly be directly applied in practice to assess the radiation resistance (PC) of electronic components intended for on-board electronic equipment of space apparatus. To optimize the testing process and reduce their volume to “reasonable” limits, MUs can be used, including INR and EFUs generating pulsed x-ray radiation (RI).

The closest in technical essence and adopted as a prototype is an experimentally developed method for predicting the intensity of LSI failures in the fields of proton and neutron radiation. Relative efficiency coefficients (COE) or Relative Dose Enhancement Factor (RDEF) of no SEE emissions for silicon LSIs after separate irradiation with protons and neutrons of a nuclear reactor are taken equal to for protons RDEF = 1, for reactor neutrons RDEF = 300-700, for neutrons with energy 14 MeV RDEF = 1-2 [5]. The disadvantage of this method is the lack of data on the applicability of the derived RDEF for structures in which not only surface effects, but also the mechanisms of collection of charge carriers, i.e. electric mode of operation of the metal-insulator-semiconductor (MIS) structure. In addition, a significant drawback of this method is the lack of information on specific RDEFs for a wide range of TZZ with different threshold values of linear energy transfer (loss) LET _TH (Linear Energy Transfer Threshold), because Installations creating particles with the required energies are best known in Russia and certified as research ones.

The technical result of the proposed method is to reduce the cost and duration of radiation resistance tests, as well as to increase the reliability of the test results by taking into account the kinetics of accumulation of radiation-induced charge carriers in the electric field and taking into account the design features of the transistor structure of MOS / KND.

The technical result is achieved by the fact that in the method for testing semiconductor LSI CMOS / KND technology on the resistance to the effects of single failures from the effects of spaceborne spaceborne cosmic radiation by irradiating a limited selection of LSIs with pulsed ionizing radiation, a limited sample of LSIs are irradiated with gamma-neutron radiation from a pulsed nuclear reactor (INR) with average energy of 1.0-3.0 MeV or pulsed x-ray radiation of electrophysical installations (EFU) with an equivalent dose, causing generation equal to that of TZZ radiation-induced charge in a sensitive LSI volume. To determine the resistance to TZZ with a threshold value of linear energy losses LET _TH in the range from units to hundreds of MeV · cm ² / mg, the value of the coefficient of relative effectiveness RDEF (Relative Dose Enhancement Factor) of exposure to the total absorbed dose of x-ray or gamma radiation in relation to to LET _TH using the ratio

$$RDEF=\frac{D_R\left(\gamma -\mathrm{to}\mathrm{at}.RS-\mathrm{uh}\mathrm{to}\mathrm{at}.-\left(M\right)\right)}{LE{T}_{TH}}=\frac{\rho \times s_{\max }}{K_g^R\times f_y^R\times B_{de}^R\times w\left(M\right)\times g\left(\gamma -\mathrm{to}\mathrm{at}\mathrm{.one}M\mathrm{uh}\mathrm{AT}-\mathrm{uh}\mathrm{to}\mathrm{at}.-\left(M\right)\right)\times \nu }|{}_{Q_t=const}$$

in units $$\left[\left(R\mathrm{but}d\left(M\right)-RS\right)/\left(\frac{M\mathrm{uh}\mathrm{AT}\cdot \mathrm{from}{m}^2}{g}\right)\right],\begin{array}{cccc}& & & \end{array}\left(\mathrm{one}\right)$$

- максимальное значение хорды в чипе структуры МДП, см; α - ширина чипа структуры МДП, см; b - длина чипа, см; с - высота чипа; см; $$K_g^R$$

- константа радиационной генерации носителей заряда, Кл·см^-3.рад(M)^-1; $$f_y^R$$

- предельное значение доли нерекомбинированного радиационно-индуцированного заряда в структуре МДП при воздействии излучения моделирующей установки (МУ) в присутствии приложенного электрического поля напряженностью Е, МВ·см^-1; $$B_{de}^R$$

- фактор дозового накопления в структуре КНД гамма-рентгеновского излучения МУ со спектром квантов RS; w(M) - энергия образования одной электронно-дырочной пары (ehp) в данном материале (М) Si или SiO₂, МэВ; g(γ-кв.1 МэВ-экв.-(M)) - постоянная генерации ehp гамма-рентгеновским излучением с эквивалентной энергией квантов Е_КВ.=1 МэВ в материале (М), ehp·см^-3 рад(M)^-1; ν=a×b×c - объем чувствительной области, см³, A_t=a×b - площадь поверхности чипа, см²; с=t_ПС - толщина приборного слоя структуры МДП, см; Q_t - эквивалентная величина радиационно-индуцированного заряда гамма-рентгеновским излучением в структуре МДП, Кл; ν=L×B×t_ПС; $$K_g^I$$

, $$f_y^I$$

, $$B_{de}^I$$

- значения аналогичных констант при облучении ТЗЧ структуры МДП.where: ρ is the density of the irradiated semiconductor material, g · cm ^-3 ; $$s_{\max }=\sqrt{a^2+{\mathrm{<figure-callout\; id="2"\; label="b"\; filenames="00000146.png"\; state="\{\{state\}\}">b</figure-callout>}}^2+c^2}$$

- the maximum value of the chord in the chip of the TIR structure, cm; α is the width of the chip of the TIR structure, cm; b is the length of the chip, cm; c is the height of the chip; cm; $$K_g^R$$

is the constant of radiation generation of charge carriers, C · cm ^-3. rad (M) ^-1 ; $$f_y^R$$

- the limit value of the fraction of non-recombinant radiation-induced charge in the MIS structure when exposed to the radiation of a modeling installation (MU) in the presence of an applied electric field of intensity E, MV · cm ^-1 ; $$B_{de}^R$$

- the factor of dose accumulation in the structure of the directivity gain of gamma-x-ray radiation MU with the spectrum of quanta RS; w (M) is the energy of formation of one electron-hole pair (ehp) in a given material (M) Si or SiO ₂ , MeV; g (γ-sq. 1 MeV-eq .- (M)) is the generation constant of ehp by gamma-ray radiation with the equivalent quantum energy E _KV. = 1 MeV in the material (M), ehp · cm ^-3 rad (M) ^-1 ; ν = a × b × c is the volume of the sensitive region, cm ³ , A _t = a × b is the surface area of the chip, cm ² ; c = t _PS - the thickness of the instrument layer of the MPE structure, cm; Q _t is the equivalent value of the radiation-induced charge by gamma-ray radiation in the structure of the MIS, C; ν = L × B × t _PS ; $$K_g^I$$

, $$f_y^I$$

, $$B_{de}^I$$

- values of similar constants when irradiating the TCD structure of the MIS.

определяют из соотношения [6]In order to take into account the kinetics of accumulation and relaxation of the charge of radiation-induced carriers in an electric field, the coefficient $$f_y^R$$

determined from the relation [6]

$$f_y^{X-Ray}\left(E\right)={\left[1.30/\left(E+0.113\right)\right]}^{-\mathrm{one}},\begin{array}{cccc}& & & \end{array}\left(2\right)$$

for the energy of x-ray quanta E _X-Ray = 0.01-0.3 MeV and

$$f_y^{X-Ray,\gamma -\mathrm{to}\mathrm{at}.}={\left[0.27/\left(E+\mathrm{0,084}\right)+\mathrm{one}\right]}^{-\mathrm{one}}\begin{array}{cccc}& & & \end{array}\left(3\right)$$

for the energy of gamma-ray quanta of a nuclear reactor or EFU E _{NR, X-Ray} = 1 ... 6 MeV.

используют зависимость величины $$B_{de}^R$$

от толщины подзатворного оксида t_ox в видеTo take into account the design features of the transistor structure of MOS / KND, to assess the value of the dose accumulation factor $$B_{de}^R$$

use the dependence of the value $$B_{de}^R$$

from the thickness of the gate oxide t _ox in the form

, $$B_{de}^R=-6.43\cdot {10}^{-\mathrm{four}}\times t_{ox}+\mathrm{1,4857,}\begin{array}{cccc}& & & \end{array}\left(\mathrm{four}\right)$$

,

для энергии гамма-рентгеновских квантов ядерного реактора или ЭФУ с энергией Е_{ЯР, X-Ray}=1…6 МэВ.where t _ox in nm, for the energy of x-ray quanta E _X-Ray = 0.01-0.3 MeV and $$B_{de}^{X-Ray}\approx \mathrm{one}$$

for the energy of gamma-ray quanta of a nuclear reactor or EFI with an energy of E _{NR, X-Ray} = 1 ... 6 MeV.

Кл·см^-3·(SiO₂)^-1 для источника рентгеновского излучения 10 кэВ и $$K_g^R=\mathrm{1,3}\cdot {10}^{-6}$$

Кл·см^-3·(SiO₂)^-1 для ядерного реактора или ЭФУ [6].In the manufacture of a dielectric of a gate oxide of a MIS structure based on silicon dioxide (M = SiO ₂ ), the radiation generation constants of electron-hole pairs in it are taken equal $$K_g^R=1.4\cdot {10}^{-6}$$

C · cm ^-3 · (SiO ₂ ) ^-1 for an X-ray source of 10 keV and $$K_g^R=1.3\cdot {10}^{-6}$$

CL · cm ^-3 · (SiO ₂ ) ^-1 for a nuclear reactor or EFI [6].

In order to reduce the cost of testing, the equivalent absorbed dose of gamma-ray radiation of INR or X-ray radiation of EFUs with RS spectrum is determined using the ratio

$$D_R\left(\gamma -\mathrm{to}\mathrm{at}.RS-\mathrm{uh}\mathrm{to}\mathrm{at}.-\left(M\right)\right)=RDEF\times LE{T}_{TH}.\begin{array}{cccc}& & & \end{array}\left(5\right)$$

To take into account the design features of the MOS / KND transistor structure, to estimate the LET _TH value from the SLC in MIS structures with a gate oxide thickness t _ox ≥40 nm, use the ratio

$$LE{T}_{TH}=2.21\cdot {10}^3\times s_{\max }\left(m\mathrm{to}m\right)\left[\frac{M\mathrm{uh}\mathrm{AT}\cdot \mathrm{from}{m}^2}{g}\right]\begin{array}{cccc}& & & \end{array}\left(6\right)$$

ее рассчитывают из соотношенияTo increase the reliability of determining the value $$F_{\Sigma }=K_g^R\times f_y^R\times B_{de}^R$$

it is calculated from the ratio

$$F_{\Sigma }=2.21\cdot {10}^3=\frac{\rho \times s_{\max }^2}{RDEF\times w\left(M\right)\times g\left(\gamma -\mathrm{to}\mathrm{at}\mathrm{.one}M\mathrm{uh}\mathrm{AT}-\mathrm{uh}\mathrm{to}\mathrm{at}.-\left(M\right)\right)\times \nu }\left[\frac{\mathrm{TO}l}{\mathrm{from}{\mathrm{<figure-callout\; id="3"\; label="m"\; filenames="00000147.png"\; state="\{\{state\}\}">m</figure-callout>}}^3\cdot R\mathrm{but}d\left(M\right)}\right],\begin{array}{cc}& \end{array}\left(7\right)$$

which is then used to determine the RDEF values and the equivalent dose D _R (γ-sq. RS-eq .- (M)) of the SEE simulating gamma-ray source of the BIS CMOS / LPC technology of a similar technology and design.

In figure 1. charge collection is shown in the n-pocket of the p-channel transistor of the MOS structure from: a) heavy ions (TLC) and b) incident high-energy protons [4].

Figure 2 schematically shows the procedure for assessing the intensity of SEE [4]:

(1) - Measured cross sections of SEE;

(2) - The spectrum of linear energy loss TZCh;

(3) - LSI failure rate;

(4) - The sensitive volume of the transistor of the MOS structure.

Figure 3 presents a typical dependence of the cross-section of the SEE from LET for various TZZ. Y axis: Cross section of SEE (particles / cm ² ); X-axis: LET (MeV · cm ² / mg).

Figure 4 shows the integrated LET spectrum for the orbit of a spacecraft with a height of 400 km. Y axis: fluence of particles (particles / (m ² · sterrad · s); X axis: LET (MeV · cm ² / mg).

Figure 5 presents the initial structure of the sensitive volume of the MOS transistor for calculating the LET in the "critical charge" model [7].

Figure 6 shows the cross section of the CMOS / SSC structure.

The proposed method is implemented as follows.

In the method for testing semiconductor LSI CMOS / KND technology for resistance to the effects of single failures due to the effects of space-frequency TCDs, a limited sample of LSIs is irradiated with gamma-neutron radiation of INR with an average energy of 1.0-3.0 MeV or pulsed X-ray radiation of an equivalent dose dose-generating device, causing the generation of a radiation-induced charge Q _t in the sensitive volume of the LSI equal to that of the TZZ.

To determine the equivalent dose D _R (γ-sq. RS-equiv .- (M)) and resistance to TZZ with a threshold value of _{TH TH} in the range from units to hundreds of MeV · cm ² / mg, the value of the coefficient of relative efficiency RDEF of exposure is used the total absorbed dose of x-ray or gamma radiation in relation to the LET _TH value using the relation (1) ((PA.24 Appendix “A”). At the same time, the radiation-induced charge Q _t remains equal in the sensitive LSI volume when exposed as MU radiation and linear energy losses LET.

в (1), представляющую собой предельное значение доли нерекомбинированного радиационно-индуцированного заряда в структуре МДП при воздействии излучения МУ в присутствии приложенного электрического поля напряженностью E определяют из соотношения (2) для энергии рентгеновских квантов E_X-Ray=0,01-0,3 МэВ и из соотношения (3) для энергии гамма-рентгеновских квантов ИЯР или ЭФУ Е_{ЯР, X-Ray}=1…6 МэВ.In order to take into account the kinetics of accumulation and relaxation of the charge of radiation-induced carriers in an electric field, the coefficient $$f_y^R$$

in (1), which is the limiting value of the fraction of unrecombined radiation-induced charge in the MIS structure when exposed to ME radiation in the presence of an applied electric field of intensity E is determined from relation (2) for the energy of X-ray quanta E _X-Ray = 0.01-0, 3 MeV and from relation (3) for the energy of gamma-ray quanta of INR or EFU E _{NR, X-Ray} = 1 ... 6 MeV.

в структурах МОП используют зависимость величины $$B_{de}^R$$

от толщины подзатворного оксида t_ox в виде (4) для энергии рентгеновских квантов E_X-Ray=0,01-0,3 МэВ и $$B_{de}^{X-Ray}\approx 1$$

для гамма-рентгеновских квантов ИЯР или ЭФУ с энергией Е_{ЯР, X-Ray}=1…6 МэВ.To take into account the design features of the transistor structure of MOS / KND, to assess the value of the dose accumulation factor $$B_{de}^R$$

in the structures of MOS use the dependence of the value $$B_{de}^R$$

from the thickness of the gate oxide t _ox in the form (4) for the energy of X-ray quanta E _X-Ray = 0.01-0.3 MeV and $$B_{de}^{X-Ray}\approx \mathrm{one}$$

for gamma-ray quanta of INR or EFU with energy E _{NR, X-Ray} = 1 ... 6 MeV.

Estimates of the LET _TH value from TZZ in MIS structures with a gate oxide thickness t _ox ≥40 nm use relation (6).

Кл·см-3·рад(SiO2)-1 для источника рентгеновского излучения 10 кэВ $$K_g^R=\text{1}\text{,3}\cdot {\text{10}}^{\text{-6}}$$

Кл·см-3·рад(SiO2)-1 для ИЯР или ЭФУ.In the manufacture of a dielectric of a gate oxide of a MIS structure based on silicon dioxide (M = SiO ₂ ), the radiation generation constants of electron-hole pairs in it are taken equal $$K_g^R=\text{one}\text{,four}\cdot {\text{10}}^{\text{-6}}$$

C · cm-3 · rad (SiO2) -1 for an X-ray source of 10 keV $$K_g^R=\text{one}\text{, 3}\cdot {\text{10}}^{\text{-6}}$$

CL · cm-3 · rad (SiO2) -1 for INR or EFU.

In order to reduce the cost of testing, the equivalent absorbed dose of gamma-ray radiation from INR or X-ray radiation from an EFU with RS spectrum is determined using relation (5).

Existing trends in the design and manufacture of LSIs (i.e., reducing the size of devices, power consumption, increasing linear resolution, increasing memory and speed) can only increase sensitivity to SEE effects. This can be easily seen if you imagine the device as a simple capacitor (C), into which an ionizing particle penetrates, creating an unsteady charge Q _t , as a result of which the voltage in the load changes (i.e., the logical state). The SEE effect is observed if LET> Q _crit is the value of the “critical charge”. With a decrease in the active region of such a device, its capacity also decreases and the same charge contributes to the appearance of SEE effects. The thickness of the device basically remains unchanged, only the length and width of the device undergo changes. If we consider the transistor structure of an MIS in the form of a chip of a square configuration L × L, then the critical charge sufficient to change the logical state of such an instrument will be proportional to the square of size L. The “critical charge” model [7] is suitable for SEE analysis for integrated circuits of a number of technologies (including NMOS, CMOS / surround, CMOS / SOS, i ² L, GaAs, ECL, CMOS / SOI, bipolar VHSIC). This critical charge directly leads to a switch from a logical “1” state to a logical “0” state or a change in a logical state (conversion), but it can be less than the total radiation-induced charge Q _t due to the length of the SLC track in a sensitive volume the TIR structure, which is used in the model of the "chord" s (Figure 5). The chord is minimal with the normal incidence of the TCD on the front or inverse surface of the chip of the MIS structure and takes the maximum value s _max when it is the spatial diagonal of the chip in the form of a parallelepiped (Figure 5). It is significant that Q _crit is the difference between the charge Q _t at the site and the minimum charge necessary for amplification and subsequent conversion. To take into account the structural features of the MOS / KND transistor structure, to estimate the LET _TH value from the SLC in MIS structures with a gate oxide thickness t _ox ≤40 nm, relation (6) is used [6, 7].

ее рассчитывают из соотношения (7), которое в дальнейшем используют для определения величин RDEF и эквивалентной дозы D_R(γ-кв.RS-экв.-(M)) моделирующего SEE источника гамма-рентгеновского излучения для испытаний БИС технологии КМОП/КНД аналогичной технологии и конструктива.To increase the reliability of determining the value $$F_{\Sigma }=K_g^R\times f_y^R\times B_{de}^R$$

it is calculated from relation (7), which is then used to determine the RDEF values and the equivalent dose D _R (γ-sq. RS-equiv .- (M)) of the SEE simulating gamma-ray source for testing CMOS / LPC LSI technology similar technology and construct.

An example implementation of the method.

Below, we analyze the sensitivity of the CMOS / KND LIS technology to the possibility of SEE using the procedure proposed above. The main parameters of the MOS transistor structures as part of the LSI, which are analyzed below, are shown in Fig. 6 and in Table PA.2 and Table PA.3 of Appendix “A”. Table PA.2 shows the sizes of the sensitive areas of MOS transistors as part of the CMOS / KND LIS technology adopted to calculate the sensitivity to SEE and the effects of the total absorbed dose (TID) from the effects of gamma-ray quanta of INR and X-ray radiation of an electron-phase diffraction device. Table PA.3 shows the thicknesses of the main layers of the MIS heterostructure. Table PA.4 of Appendix “A” shows the properties of pure semiconductor materials and dielectrics used in MIS structures at a temperature of 27 ° C.

Instead of irradiating the CMOS / KND semiconductor LSI technology with electronic, proton radiation, or an SJ stream to simulate SEE, a limited sample of LSIs is irradiated with pulsed gamma-neutron ionizing radiation of the INR or pulsed X-ray radiation of an EFU with an equivalent dose that causes generation of radiation-induced charge equal to the SJ in Q _t sensitive LSI volume. The average energy of gamma-neutron radiation from the INR or X-ray radiation of an EFI is selected to be 1.0-3.0 MeV.

To determine the equivalent dose D _R (γ-sq. RS-equiv .- (M)) of radiations of INR or EFU, which causes the radiation-generated charge Q _t in the LE _TH range from units to hundreds equal to linear energy loss LE _TH for the TLC MeV · cm ² / mg use the value of the coefficient of relative efficiency RDEF of the dose of x-ray or gamma radiation in relation to the value of LET _TH from the ratio (1) ((PA.24) Appendix "A").

In this case, the equality of the radiation-induced charge Q _t in the sensitive LSI volume is maintained under the influence of both the radiation of the ME and linear energy losses LET.

- максимальное значение хорды в чипе структуры МДП [мкм]; a - ширина чипа структуры МДП; b - длина чипа; c - высота чипа, [мкм] из табл.ПА.2 Приложения «A»; $$K_g^R$$

- константа радиационной генерации носителей заряда из табл.ПА.1 Приложения «А» для МУ и одиночной ТЗЧ, $$\frac{Кл}{с{м}^3\cdot рад\left(Si\right)}$$

; $$f_y^R$$

- предельное значение доли нерекомбинированного радиационно-индуцированного заряда в структуре МДП при воздействии излучения МУ и одиночной ТЗЧ в присутствии приложенного электрического поля напряженностью E, [MB·см^-1], из табл.ПА.1 Приложения «A»; $$B_{de}^R$$

- фактор дозового накопления в структуре КНД гамма-рентгеновского излучения МУ со спектром квантов RS и одиночной ТЗЧ из табл.ПА.1 Приложения «А», отн. ед.The following constant values are accepted: ρ = 2.33 g · cm ^-3 for Si; $$s_{\max }=\sqrt{a^2+{\mathrm{<figure-callout\; id="2"\; label="b"\; filenames="00000146.png"\; state="\{\{state\}\}">b</figure-callout>}}^2+c^2}$$

- the maximum value of the chord in the chip structure MDP [μm]; a is the chip width of the TIR structure; b is the length of the chip; c is the height of the chip, [μm] from Table PA.2 of Appendix "A"; $$K_g^R$$

- the constant of radiation generation of charge carriers from Table PA.1 of Appendix A for MU and single TZCh, $$\frac{\mathrm{TO}l}{\mathrm{from}{\mathrm{<figure-callout\; id="3"\; label="m"\; filenames="00000147.png"\; state="\{\{state\}\}">m</figure-callout>}}^3\cdot R\mathrm{but}d\left(Si\right)}$$

; $$f_y^R$$

- the limit value of the fraction of non-recombinant radiation-induced charge in the MIS structure when exposed to radiation from the MI and a single TZZ in the presence of an applied electric field of intensity E, [MB · cm ^-1 ], from Table PA.1 of Appendix “A”; $$B_{de}^R$$

- the factor of dose accumulation in the structure of the directivity gain of gamma-x-ray radiation of MU with the spectrum of quanta RS and single TZCh from table PA.1 of Appendix “A”, rel. units

определяют из соотношения (2) для энергии рентгеновских квантов E_X-Ray=0,01-0,3 МэВ и (3) для энергии гамма-рентгеновских квантов ИЯР или рентгеновских квантов ЭФУ с энергией Е_{ЯР, X-Ray}=1…6 МэВ. Для учета конструктивных особенностей транзисторной структуры КНД, для оценки величины фактора дозового накопления $$B_{de}^R$$

используют зависимость величины $$B_{de}^R$$

от толщины подзатворного оксида t_ox в виде (4) для энергии квантов 10 кэВ и напряженности электрического поля E=1…6 МВ·см^-1. Для ИИ ИЯР, ЭФУ, одиночной ТЗЧ с энергией квантов Е_{ИЯР, ЭФУ, ТЗЧ}≥1 МэВ принимают величину $$B_{de}^R\approx 1$$

.To take into account the kinetics of accumulation and relaxation of the charge of radiation-induced carriers in an electric field, the coefficient $$f_y^R$$

determined from relation (2) for the energy of x-ray quanta E _X-Ray = 0.01-0.3 MeV and (3) for the energy of gamma-ray quanta of INR or X-ray quanta of EFU with energy E _{NR, X-Ray} = 1 ... 6 MeV To take into account the design features of the transistor structure of the KND, to assess the value of the dose accumulation factor $$B_{de}^R$$

use the dependence of the value $$B_{de}^R$$

from the thickness of the gate oxide t _ox in the form (4) for a quantum energy of 10 keV and an electric field strength E = 1 ... 6 MV · cm ^-1 . For AI INR, EFU, single TZCh with energy of quanta E _{INR, EFU, TZH} ≥1 MeV take the value $$B_{de}^R\approx \mathrm{one}$$

.

Кл·см^-3·рад(SiO₂)^-1 для источника рентгеновского излучения с энергией 10 кэВ и $$K_g^R=\mathrm{1,3}\cdot {10}^{-6}$$

Кл·см^-3·рад(SiO₂)^-1 для ИЯР или ЭФУ. Величину $$K_g^I$$

для ТЗЧ вычисляют с использованием соотношения (ПА.23) Приложения «A», а величины $$f_y^R$$

и $$f_y^I$$

для соответствующих значений энергий из соотношений, приведенных в табл.ПА.1.In the manufacture of a dielectric of a gate oxide of a MIS structure based on silicon dioxide (M = SiO ₂ ), the radiation generation constants of electron-hole pairs in it are taken equal to $$K_g^R=1.4\cdot {10}^{-6}$$

C · cm ^-3 · rad (SiO ₂ ) ^-1 for an x-ray source with an energy of 10 keV and $$K_g^R=1.3\cdot {10}^{-6}$$

CL · cm ^-3 · rad (SiO ₂ ) ^-1 for INR or EFU. Magnitude $$K_g^I$$

for TZCh calculated using the ratio (PA.23) Appendix "A", and the values $$f_y^R$$

and $$f_y^I$$

for the corresponding energies from the ratios given in Table PA.1.

, для источников гамма-рентгеновского излучения ИЯР, гамма-квантов нуклидного источника Co⁶⁰ приведены в табл.1 для транзисторных структур МДП различного класса мощности: низкой (low - «L»); средней (middle - «M»); большой (big - «B»).The RDEF value is calculated using the relation (1) (or (PA.24) Appendix “A”). Calculation data, for X-ray radiation of EFU with a quantum energy of 10 keV, TZCh with $$LE{T}_{TH}=28\frac{M\mathrm{uh}\mathrm{AT}\cdot \mathrm{from}{m}^2}{mg}$$

, for gamma-ray radiation sources of INR, gamma-quanta of the nuclide source Co ⁶⁰ are given in Table 1 for MIS transistor structures of various power classes: low (low - “L”); middle (middle - “M”); large (big - "B").

Table 1 AI source

$$\begin{array}{l}{K}_{\Sigma },\\ \frac{\mathrm{TO}l}{\mathrm{from}{m}^{-3}\times R\mathrm{but}d\left(Si\right)}\end{array}$$

X-Ray c E _X-Ray = 10 keV INR, Co ⁶⁰ E _gamma ≥1 MeV RDEF value "L" ↓ ↑ 5.36 ≈11.09 - "M" ↓ ↑ 4.43 ≈7.08 - "B" ↓ ↑ 5.36 ≈1.85 - "L" ↓ ↑ 6.91 - ≈14.31 "M" ↓ ↑ 5.74 - ≈11.63 "B" ↓ ↑ 5.36 - ≈0.18 "L" ↔ 5.36 ≈90.90 - "M" ↔ 4.43 ≈73,58 - "B" ↔ 5.36 ≈1.51 - "L" ↔ 6.91 - ≈117.45 "M" ↔ 5.74 - ≈105.53 "B" ↔ 5.36 - ≈1.51 Notes: 1) “L”, “M”, “B” - designations of transistors of small, medium and high power, respectively; 2) "↓ ↑" - normal to the surface of the TIR structure drop TZCh, 3) “↔” - longitudinal movement of the TZCh in the TIR structure.

In order to reduce the cost of testing, the equivalent absorbed dose of gamma-ray radiation from INR or X-ray radiation from an EFU with RS spectrum is determined using relation (5).

To take into account the design features of the MOS / KND transistor structure, to estimate the LETTH value from the SLC in MIS structures with a gate oxide thickness t _ox ≤40 nm, relation (6) is used.

The results of assessing the sensitivity of MDP structures to SEE effects are summarized in Table 2. The index “1)” in indicates the values of LET _TH , which indicate the sensitivity of the TIR structures of this power class to SEE from TZCh. The “2)” index indicates MOS structures that do not require analysis of sensitivity to SEE. This means that low-power transistors are prone to SEZ effects from the current transformer only at a certain angle of incidence of the current transformer. Index “3)” indicates the possibility of total ionization of transistor structures, regardless of the value of LET _TH . Criteria for assessing the sensitivity of devices to the action of KP factors are taken from Table 3.

чувствительности приборов к SEE от ТЗЧ от LET $$\left[\frac{Мэв\cdot с{м}^2}{мг}\right]$$

ступенчатой функцией, определяют поток частиц для случая LET<LET_TH, достаточный для образования SEE.Approximating the dependence in figure 3 of the cross section $$\sigma \left[\frac{h\mathrm{but}\mathrm{from}t\mathrm{and}c}{\mathrm{from}{m}^2}\right]$$

sensitivity of devices to SEE from LZT from LET $$\left[\frac{M\mathrm{uh}\mathrm{at}\cdot \mathrm{from}{m}^2}{mg}\right]$$

step function, determine the particle flux for the case LET <LET _TH , sufficient for the formation of SEE.

table 2 Transistor power The values of LET _TH , MeV · cm ² / mg For TZCh For X-Ray, Co ⁶⁰

, мкм² $$s_{\mathrm{<figure-callout\; id="2"\; label="max"\; filenames="00000146.png"\; state="\{\{state\}\}">max</figure-callout>}}^2$$

μm ² Let _th $$s_{\max }^2$$

Let _th Small 821 63.4 ²⁾ 256 34 ³⁾ Average 1008 70 ¹⁾ 515 48.1 ³⁾ Big 80400 628.5 ¹⁾ 5.6 × 10 ⁷ 1.6 × 10 ⁴³⁾

Table 3 Let _th appliances External influences for analysis <10 MeV · cm ² / mg TZCH, captured protons, solar wind protons 10-100 MeV · cm ² / mg TZCh > 100 MeV cm ² / mg No analysis required

To do this, use the fact that the cross-section A, sensitive volume (BH) of the TIR structures of power “L” and “M” according to Table PA.2 of Appendix “A” is equal to the cross-section σ _SEE (LET _TY ) for for SEE on Figure 3, i.e. A _t = L × B = σ _SEE (LET _TH ). The reciprocal cross section σ _SEE (LET _TH ) allows us to estimate the critical particle flux, for which only one particle with probability 1 falls into the BH of the MIS structure. Using the data of Table PA.2, L = 17.5 μm = 1.75-10 ^-3 and B = 3.0 μm = 3.0 · 10 ^-4 cm, an estimate of the cross section gives the value of σ _SEE (LET _TH ) = 5.25 · 10 ^-7 cm ² and the critical particle flux is φ _crit = 1.9 · 10 ⁶ frequent ^. cm ^-2 .

, где $${\tau }_P^R$$

- длительность импульса МУ, P_R - предельная мощность дозы для квантов с энергией ~1 МэВ, обеспечивающая эквивалентную ионизацию ЧО для плотности потока φ_crit=1,9·10⁶ част.см^-2.Using the LET _TH values from Table 2 and substituting their values in (5) for s _max = 28.4 μm and the corresponding RDEF values from Table 1, taking into account the criteria in Table 3, the equivalent dose values D _R (γ-sq. 1 MeV-eq .- (Si)), which are summarized in table 4. Value $$P_R=\frac{d{D}_R}{dt}\approx \frac{D_R}{{\tau }_P^R}$$

where $${\tau }_P^R$$

is the pulse duration of the ME, P _R is the limiting dose rate for quanta with an energy of ~ 1 MeV, which provides equivalent ionization of the HO for the flux density φ _crit = 1.9 · 10 ⁶ part.cm ^-2 .

Table 4 Power class of MIS transistors and conditions for the fall of the TZCh RDEF Values

Let _th $$\frac{M\mathrm{uh}\mathrm{AT}\cdot \mathrm{from}{m}^2}{g}\times {10}^3$$

D _R mrad (Si) MU P _R , (Si) .c ^-1 "L" ↓ ↑ 11.09 63,4 704 X-ray torch 1.4110 ⁷ "M" ↓ ↑ 7.09 70.0 497 9.9510 ⁶ "L" ↔ 90.90 63,4 5760 γ-square INR, Co ⁶⁰ 2.57 · 10 ⁵ "M" ↔ 73.58 70.0 7380 3.6910 ⁵ Notes: 1) X-Ray-τ _X-Ray source pulse width = 50 ns; 2) the duration of the INR pulse is τ = 2 ms.

ее значение рассчитывают из соотношения (7), которое в дальнейшем используют для определения величин RDEF и эквивалентной дозы D_R(γ-кв.RS-экв.-(M)) моделирующего SEE источника гамма-рентгеновского излучения БИС технологии КМОП/КНД аналогичной технологии и конструктива. Так при подстановке в (7) данных, соответствующих структурам («L»↓↑) и («M»↓↑): K_Σ и RDEF из табл.1; a=L, b=B, s_max из табл.ПА.2 Приложения «A», c=t_ПС=3,5·10^-5 см; w=3,6·10^-6 МэВ; $$g=\mathrm{8,1}\cdot {10}^{12}\frac{ehp}{с{м}^3\cdot рад\left(Si{O}_2\right)}$$

; LET_TH из (ПА.29) Приложения «A», получают расчетные значения D_R или P_R для аналогичных структур МДП по конструкции и электрическим режимам эксплуатации. При s_max=28,8 мкм, L=17,5 мкм, B=3 мкм величина $$LE{T}_{TH}=\mathrm{63,65}\frac{Мэв\cdot с{м}^2}{мг}$$

, а величина $$K_{\Sigma }=\mathrm{8,57}\frac{Кл}{с{м}^2\cdot рад\left(Si\right)}$$

для структур («L»↓↑) и $$K_{\Sigma }=\mathrm{6,46}\frac{Кл}{с{м}^2\cdot рад\left(Si\right)}$$

для структур («M»↓↑).In order to increase the reliability of determining the integral value of constants $$F_{\Sigma }=K_g^R\times f_y^R\times B_{de}^R$$

its value is calculated from relation (7), which is then used to determine the RDEF values and the equivalent dose D _R (γ-sq. RS-equiv .- (M)) of the SEE simulating source of gamma-ray radiation BIS technology CMOS / KND similar technology and constructive. So when substituting in (7) the data corresponding to the structures (“L” ↓ ↑) and (“M” ↓ ↑): K _Σ and RDEF from Table 1; a = L, b = B, s _max from Table PA.2 of Appendix “A”, c = t _PS = 3.5 · 10 ^-5 cm; w = 3.6 · 10 ^-6 MeV; $$g=8.1\cdot {10}^{12}\frac{ehp}{\mathrm{from}{\mathrm{<figure-callout\; id="3"\; label="m"\; filenames="00000147.png"\; state="\{\{state\}\}">m</figure-callout>}}^3\cdot R\mathrm{but}d\left(Si{O}_2\right)}$$

; LET _TH from (PA.29) of Appendix “A”, the calculated values of D _R or P _R for similar TIR structures in terms of design and electrical operating conditions are obtained. With s _max = 28.8 μm, L = 17.5 μm, B = 3 μm, the value $$LE{T}_{TH}=63.65\frac{M\mathrm{uh}\mathrm{at}\cdot \mathrm{from}{m}^2}{mg}$$

, and the value $$K_{\Sigma }=8.57\frac{\mathrm{TO}l}{\mathrm{from}{\mathrm{<figure-callout\; id="2"\; label="m"\; filenames="00000146.png"\; state="\{\{state\}\}">m</figure-callout>}}^2\cdot R\mathrm{but}d\left(Si\right)}$$

for structures (“L” ↓ ↑) and $$K_{\Sigma }=6.46\frac{\mathrm{TO}l}{\mathrm{from}{\mathrm{<figure-callout\; id="2"\; label="m"\; filenames="00000146.png"\; state="\{\{state\}\}">m</figure-callout>}}^2\cdot R\mathrm{but}d\left(Si\right)}$$

for structures (“M” ↓ ↑).

Thus, the results of studies of radiation resistance to the effects of gamma-ray radiation of INR and EFU can be used to determine the resistance to SEE from TZZ using the appropriate RDEF coefficients. Therefore, the proposed method, which involves only irradiation with gamma-ray radiation of INR or EFU, can significantly reduce the cost of the tests, reduce their volume and increase the reliability of the test results.

, что позволяет выбирать режимы испытаний БИС технологии КМОП/КНД с учетом конструктивных особенностей и электрического режима эксплуатации на основании как расчетных, так и экспериментальных значении $$LE{T}_{TH}\left[\frac{Мэв\cdot с{м}^2}{мг}\right]$$

.The dependence of the equivalent dose of gamma-ray radiation of INR or EFU was established by the criterion of equivalence of the radiation-induced critical charge Q _c with the value $$LE{T}_{TH}\left[\frac{M\mathrm{uh}\mathrm{at}\cdot \mathrm{from}{m}^2}{mg}\right]$$

that allows you to choose the test modes LSI technology CMOS / KND taking into account the design features and electrical mode of operation based on both the calculated and experimental values $$LE{T}_{TH}\left[\frac{M\mathrm{uh}\mathrm{at}\cdot \mathrm{from}{m}^2}{mg}\right]$$

.

The value of the equivalent dose of gamma-ray radiation from INR or EFU is reduced to the energy of quanta E _{γ, X-Ray} = 1 MeV - equiv., Which allows the use of MU with an arbitrary spectrum of FS II.

APPENDIX A: EVALUATION OF AN EQUIVALENT DOSE OF A SOURCE OF PULSED IONIZING RADIATION FOR MODELING THE EFFECTS OF A SINGLE FAULT (SEE) FROM THE INFLUENCE OF THE SPACE (IONS) OF SPACE

Under the influence of a radiation-induced charge in the SQ (ion) track of the KP radiation, a “filament” of a distributed electric charge is formed in the active MIS structure, which forms a pulse in the load, which leads to the appearance of SEE. Due to the rather rare phenomenon of the interaction between the TZZh and the MIS structure, the device generates such pulses in the “counting” mode, i.e. a current pulse in the load is generated when each SLC falls into the sensitive volume (Figure 1). Under the influence of a pulse of gamma-x-ray radiation MU such a "counter" operates in the integral mode, in contrast to the counting mode in the case of exposure to ions and protons. Therefore, the duration of the electric pulse will be determined by the duration of the exposure from the AI source (in the range from tens of nanoseconds to tens of microseconds and milliseconds for INR). If the particle energy is equal to E (MeV), and the energy of formation of one electron-hole pair (ehp) in this material is equal to w _ehp (MEB), then the total number of pairs generated by radiation is

$$N_{ehp}=\frac{E}{w_{ehp}},ehp.\left(P\mathrm{BUT}\mathrm{.one}\right)$$

For linear particle energy loss LET _L, we can write:

$$LE{T}_L\left(\frac{M\mathrm{uh}\mathrm{AT}}{\mathrm{from}m}\right)=LET\left(\frac{M\mathrm{uh}\mathrm{at}\times \mathrm{from}{m}^2}{g}\right)\times \rho \left(\frac{g}{\mathrm{from}{m}^3}\right),\left(P\mathrm{BUT}.2\right)$$

where: LET - mass loss of energy TZCh; ρ is the density of the material M, then the total energy loss along the chord length of the allocated sensitive volume (PR) of the MIS structure will be

$$E_{tot}^I=LE{T}_L\times s_{\max }\left(M\mathrm{uh}\mathrm{at}\right)\left(P\mathrm{BUT}.3\right)$$

Here, the length of the maximum chord s _{max of} the MIS structure is given in cm.

, предельных значениях $$f_y^{R,I}$$

и $$B_{de}^{R,I}$$

. Здесь $$K_g^R$$

- постоянная генерации носителей заряда, [Кл см^-3.рад(M)^-1]; $$f_y^R$$

- предельное значение доли нерекомбинированного радиационно-индуцированного заряда; $$B_{\mathrm{deg}}^R$$

- фактор дозового накопления гамма-рентгеновского излучения МУ со спектром квантов RS, a $$K_g^I$$

, $$f_y^I$$

, $$B_{de}^I$$

- такие же константы для ионов КП. В большинстве измерений эти величины не могут быть селектированы без принятия определенных допущений.For a more correct estimation of charge generation, it is necessary to have data on constant generation $$K_g^{R,I}$$

limit values $$f_y^{R,I}$$

and $$B_{de}^{R,I}$$

. Here $$K_g^R$$

- constant generation of charge carriers, [C cm ^-3. rad (M) ^-1 ]; $$f_y^R$$

- the limit value of the fraction of unrecombined radiation-induced charge; $$B_{\mathrm{deg}}^R$$

is the factor of dose accumulation of gamma-x-ray radiation of the MU with the spectrum of quanta RS, a $$K_g^I$$

, $$f_y^I$$

, $$B_{de}^I$$

are the same constants for KP ions. In most measurements, these values cannot be selected without making certain assumptions.

при «неопределенной толщине оксида». Для получения оценки это величины необходимо использовать соотношениеThe first is to evaluate the constant $$K_g^{R,I}$$

with an "indefinite oxide thickness." To obtain an estimate of this value, it is necessary to use the relation

$$I_{pp}^{R,I}=A_G{t}_{ox}\frac{d{\rho }_{R,I}}{dt}=A_G{t}_{ox}\left[K_g^{RI}\left(E_R\right)f_y^{R,I}\left(E,\text{A.}{E}_R\right)B_{de}^{R,I}\left(E_R,t_{ox}\right)\right]\times \frac{d{D}_{R,\text{A.}I}}{dt},\left(P\mathrm{BUT}\mathrm{.four}\right)$$

- величина ионизационного тока от воздействия ИИ МУ («R») или ТЗЧ («I»); A_G - площадь затвора; t_ox - толщина подзатворного оксида; $$\frac{d{D}_{R,I}}{dt}=P_{R,I}$$

- мощность дозы ИИ, генерируемого МУ («R») или источником ТЗЧ («I»); E_R - энергия ИИ в соответствующих единицах; E - напряженность электрического поля. При введении параметра $$I_{R,I}^{*}=I_{R,I}/\left(A_G{t}_{ox}{P}_{R,I}\right)$$

зависимость нормализованного тока проводимости $$I_{R,I}^{*}$$

от величины $$t_{ox}^{-1}$$

позволяет оценить наклон кривой $$I_{R,I}^{*}=f\left(t_{ox}^{-1}\right)$$

, т.е. обобщенный коэффициент $$K_{\Sigma }=\left[K_g^{R,I}\left(E_R\right)f_y^{R,I}\left(E,\text{}{E}_R\right)B_{de}^{R,I}\left(E_R,t_{ox}\right)\right]$$

при соблюдении условий:Where: $$I_{pp}^{R,I}$$

- the value of the ionization current from the impact of AI MU ("R") or TZCh ("I"); A _G is the area of ​​the shutter; t _ox is the thickness of the gate oxide; $$\frac{d{D}_{R,I}}{dt}=P_{R,I}$$

- the dose rate of the AI ​​generated by the MU ("R") or the source of TZCh ("I"); E _R - AI energy in appropriate units; E is the electric field strength. When entering a parameter $$I_{R,I}^{*}=I_{R,I}/\left(A_G{t}_{ox}{P}_{R,I}\right)$$

dependence of normalized conduction current $$I_{R,I}^{*}$$

from value $$t_{ox}^{-\mathrm{one}}$$

allows you to estimate the slope of the curve $$I_{R,I}^{*}=f\left(t_{ox}^{-\mathrm{one}}\right)$$

, i.e. generalized coefficient $$K_{\Sigma }=\left[K_g^{R,I}\left(E_R\right)f_y^{R,I}\left(E,\text{A.}{E}_R\right)B_{de}^{R,I}\left(E_R,t_{ox}\right)\right]$$

subject to the conditions:

- variations in the thickness of oxide films in the gate node of the MIS structure from 20 to 800 nm;

- variations in the electric field in the oxide from 0.01 to 6 MV · cm ^-1 ;

- the values of the absorbed doses in the oxide, not causing distortion of the electric field from 0.5 to 1 krad (SiO ₂ ).

без усиления дозы (т.е. $$B_{de}^I=1$$

).Extrapolation of the data in (PA.4) made it possible to obtain in [6] the value $$K_g^R$$

no dose enhancement (i.e. $$B_{de}^I=\mathrm{one}$$

)

$$K_g^R=\left(1.38\pm 0.14\right)\cdot {10}^{-16}\mathrm{TO}l\cdot \mathrm{from}{m}^{-3}\cdot R\mathrm{but}d{\left(Si{O}_2\right)}^{-\mathrm{one}}\left(P\mathrm{BUT}.5\right)$$

. Для этого используют зависимость $$B_{de}^{R,I}$$

от толщины оксида t_ox. Чем толще оксид, тем меньше величина B_de, т.к. величина поглощенной дозы дается приведенной по всей толщине подзатворного оксида. Для энергии квантов E_R=10 кэВ при t_ox=800 нм фактор B_de=1,1, а при толщине t_ox=100 нм его величина оценивается как 1,5…1,6. На основании этого зависимость $$B_{de}^{R,I}=f\left(t_{ox}\right)$$

вводят соотношением для E_R=10 кэВThe second step is to assess the dose accumulation factor $$B_{de}^{R,I}$$

. To do this, use the dependency $$B_{de}^{R,I}$$

from oxide thickness t _ox . The thicker the oxide, the lower the value of B _de , because the absorbed dose value is given over the entire thickness of the gate oxide. For the quantum energy E _R = 10 keV at t _ox = 800 nm, the factor B _de = 1.1, and at a thickness t _ox = 100 nm, its value is estimated as 1.5 ... 1.6. Based on this dependence $$B_{de}^{R,I}=f\left(t_{ox}\right)$$

introduced by the ratio for E _R = 10 keV

$$B_{de}^{R,I}=\mathrm{1,4857}-6.43\cdot {10}^{-\mathrm{four}}{t}_{ox}.\left(P\mathrm{BUT}.6\right)$$

The value of t _ox in (PA.6) is in nm.

When determining the fraction of non-recombinant radiation-induced charge, use the ratio [6]

$$f_y^R\left(E\right)={\left[1.30/\left(E+0.113\right)\right]}^{-\mathrm{one}}.\left(P\mathrm{BUT}.7\right)$$

The magnitude of the electric field in (PA.7) is given in units of [MB · cm ^-1 ].

For a nuclide source B _de this value is [6]

$$f_y^{Co-60}=f_y^{10-M\mathrm{uh}\mathrm{AT}}={\left[0.27/\left(E+\mathrm{0,084}\right)+\mathrm{one}\right]}^{-\mathrm{one}}.\left(P\mathrm{BUT}.8\right)$$

MOS transistors come with an integrated pn junction (JFET) and a field shutter (MOSFET). The former have a dielectric film thickness of the order of 20-760 nm, the latter 500-700 nm. The former are irradiated at a gate-source electric field strength E _GS ~ 1.25 MV · cm ^-1 , with drain (D), source (S) and substrate (Substrate) being connected to the point of “zero” potential. MOSFET transistors irradiated in the same configuration had an electric field strength of the order of E _GS ~ 0.1 ÷ 0.5 MB · cm ^-1 . A satisfactory correlation is observed when the MOS structures are irradiated with AI sources at a fixed electric field strength. In [6], the relationship of the total integral dose of two sources of AI in the form of

$$D_R=\frac{K_g^I\cdot f_y^I\cdot B_{de}^I}{K_g^R\cdot f_y^R\cdot B_{de}^R}{D}_{\mathrm{one}},\left(P\mathrm{BUT}.9\right)$$

, $$f_y^R$$

, $$B_{de}^R$$

определяют на основании рассмотренных данных, а также преобразовывают их в соответствующие значения для эталонного нуклидного источника Co⁶⁰: $$K_g^{Co-60}$$

, $$f_y^{Co-60}$$

, $$K_{de}^{Co-60}$$

(табл.ПА.1).Values $$K_g^R$$

, $$f_y^R$$

, $$B_{de}^R$$

determined on the basis of the data reviewed, and also converted to the appropriate values for the reference nuclide source Co ⁶⁰ : $$K_g^{Co-60}$$

, $$f_y^{Co-60}$$

, $$K_{de}^{Co-60}$$

(Table PA.1).

At an average energy of gamma quanta of AI 1 MeV, the generation constant ehp is equal for Si and SiO ₂ [5]

$$g\left(\gamma -\mathrm{to}\mathrm{at}\mathrm{.one}M\mathrm{uh}\mathrm{AT}\right)=4.05\times {10}^{13}\left[\frac{ehp}{\mathrm{from}{\mathrm{<figure-callout\; id="3"\; label="m"\; filenames="00000147.png"\; state="\{\{state\}\}">m</figure-callout>}}^3\times R\mathrm{but}d\left(Si\right)}\right];\left(P\mathrm{BUT}.10\right)$$

$$g\left(\gamma -\mathrm{to}\mathrm{at}\mathrm{.one}M\mathrm{uh}\mathrm{AT}\right)=8.1\times {10}^{12}\left[\frac{ehp}{\mathrm{from}{\mathrm{<figure-callout\; id="3"\; label="m"\; filenames="00000147.png"\; state="\{\{state\}\}">m</figure-callout>}}^3\times R\mathrm{but}d\left(Si{O}_2\right)}\right].\left(P\mathrm{BUT}\mathrm{.eleven}\right)$$

Table PA.1 AI Source / Constants X ray TZCh INR, Co ⁶⁰ Estimated Ratio Value Estimated Ratio Value Estimated Ratio Value

, $$\left[\frac{Кл}{с{м}^3\cdot рад\left(Si\right)}\right]$$

$$K_g^{R,I}$$

, $$\left[\frac{\mathrm{TO}l}{\mathrm{from}{\mathrm{<figure-callout\; id="3"\; label="m"\; filenames="00000147.png"\; state="\{\{state\}\}">m</figure-callout>}}^3\cdot R\mathrm{but}d\left(Si\right)}\right]$$

(PA.5) 1.4 · 10 ^-6 (PA.23) 6.48 · 10 ^{-6 1)} (PA.5) 1.3 · 10 ^-6 $$f_y^I$$

(PA.7) ²⁾ 0.595 ²⁾ = s _min / s _min ≈1 ³⁾ (PA.8) ²⁾ 0.772 ²⁾ = s _max / L _L ≈1 ⁴⁾ = s _max / L _M ≈0.83 ⁵⁾ = s _max / L _B ≈1 ⁶⁾ $$B_{de}^{R,I}$$

(PA.6) ~ 1.45 ⁷⁾ (PA.6) ≈1 ⁷⁾ (PA.6) ≈1 ⁷⁾ Notes: ¹⁾ TIR structures of a small power class; ²⁾ for electric field strength $$E=\frac{V}{t_{ox}}=\frac{5B}{6\cdot {10}^{-6}\mathrm{from}m}=0.83M\mathrm{AT}\cdot \mathrm{from}{m}^{-\mathrm{one}}$$

; ³⁾ for the passage of the TZZ along the smallest possible trajectory S _min , the collection of charge carriers also from this region; ⁴⁾ for the passage of the TZZ along the maximum possible trajectory s _max , the collection of charge carriers along the gate length L _{L of} the low-power TIR structure; ⁵⁾ for the flight of TZCh along the maximum possible trajectory s _max , the collection of charge carriers along the gate length L _{M of} the medium-power TIR structure; ⁶⁾ for the flight of TZCh along the maximum possible trajectory s _max , the collection of charge carriers along the gate length L _{B of} a high-power TIR structure; ⁷⁾ for an oxide thickness of 60 nm (take into account the dependence on the energy of the TZZh and quanta).

With equivalent ionization of the total volume of the MOS structure from the gamma-ray radiation of AI and the local volume from the ions of the KP, we can calculate the equivalent dose of gamma-ray radiation D _R providing the same ionization as the critical density of the ion flux

$$D_R\left(\gamma -\mathrm{to}\mathrm{at}.RS-\mathrm{uh}\mathrm{to}\mathrm{at}.-\left(M\right)\right)=D_I\left(\gamma -\mathrm{to}\mathrm{at}\mathrm{.one}M\mathrm{uh}\mathrm{AT}-\mathrm{uh}\mathrm{to}\mathrm{at}.-\left(M\right)\right)|{}_{Q_t=const}.\left(P\mathrm{BUT}.12\right)$$

Here, the “RS” spectrum (Radiation Spectrum) is MU, and “M” is the material in which the energy of AI (M∝Si or M∝SiO ₂ ) is absorbed. Equality (PA. 12) is also presented as

$$P_R\left(\gamma -\mathrm{to}\mathrm{at}.RS-\mathrm{uh}\mathrm{to}\mathrm{at}.-\left(M\right)\right)\times {\tau }_P^R=P_I\left(\gamma -\mathrm{to}\mathrm{at}\mathrm{.one}M\mathrm{uh}\mathrm{AT}-\mathrm{uh}\mathrm{to}\mathrm{at}.-\left(M\right)\right)\times t_{PR}|{}_{Q_t=const}\mathrm{,.}\left(P\mathrm{BUT}.\mathrm{one}3\right)$$

- длительность импульса ИИ МУ; t_ПР. - время пролета ТЗЧ через чувствительный объем, которое определяют из соотношенияwhere: P _{R, I} is the absorbed dose rate of the corresponding sources of AI; $${\tau }_P^R$$

- pulse duration of AI MU; t _PR - time flight TZCh through a sensitive volume, which is determined from the ratio

$$t_{PR.}=\frac{s_{\max }}{\sqrt{\frac{E}{2m_H}}},\left(P\mathrm{BUT}\mathrm{.fourteen}\right)$$

where: E - energy TZCh; m _H - mass TZCh; s _max - the maximum length of the chord in the sensitive volume along the track of the primary particle. With an isotropic distribution of particles in space, the flight time will vary depending on the length of the chord, which varies from the thickness of the instrument layer t _PS at normal particle incidence to s _max with practically longitudinal particle propagation in a thin layer. The dose D _I from (PA.12) is determined by the ratio

$$\begin{array}{l}{D}_I\left(\gamma -\mathrm{to}\mathrm{at}\mathrm{.one}M\mathrm{uh}\mathrm{AT}-\mathrm{uh}\mathrm{to}\mathrm{at}.-\left(M\right)\right)=\frac{N_{ehp}}{g\left(\gamma -\mathrm{to}\mathrm{at}\mathrm{.one}M\mathrm{uh}\mathrm{AT}-\mathrm{uh}\mathrm{to}\mathrm{at}.-\left(M\right)\right)\times \nu }=\\ =\frac{LE{T}_{TH}\times \rho \times s_{\max }}{w\left(M\right)\times g\left(\gamma -\mathrm{to}\mathrm{at}\mathrm{.one}M\mathrm{uh}\mathrm{AT}-\mathrm{uh}\mathrm{to}\mathrm{at}.-\left(M\right)\right)\times \nu }\left(P\mathrm{BUT}\mathrm{.fifteen}\right)\end{array}$$

$$D_I\left(\gamma -\mathrm{to}\mathrm{at}\mathrm{.one}M\mathrm{uh}\mathrm{AT}-\mathrm{uh}\mathrm{to}\mathrm{at}.-\left(M\right)\right)=\frac{LE{T}_{TH}\times \rho \times s_{\max }}{w\left(M\right)\times g\left(\gamma -\mathrm{to}\mathrm{at}\mathrm{.one}M\mathrm{uh}\mathrm{AT}-\mathrm{uh}\mathrm{to}\mathrm{at}.-\left(M\right)\right)\times \nu },\left(P\mathrm{BUT}.16\right)$$

The equivalent dose rate is equal to the ratio (PA.16) to (PA.14)

$$P_I\left(\gamma -\mathrm{to}\mathrm{at}\mathrm{.one}M\mathrm{uh}\mathrm{AT}-\mathrm{uh}\mathrm{to}\mathrm{at}.-\left(M\right)\right)=\frac{D_I\left(\gamma -\mathrm{to}\mathrm{at}\mathrm{.one}M\mathrm{uh}\mathrm{AT}-\left(M\right)\right)}{t_{PR.}}\left[R\mathrm{but}d\left(M\right)/\mathrm{from}\right].\left(P\mathrm{BUT}.17\right)$$

Coordination of the total absorbed dose of pulsed AI D _R (γ-square RS- (M)) in the MIS structure from MU with the RS spectrum with the equivalent dose from the effects of TZZh D _I (γ-square 1 MeV-eq. (M)) from (PA.12) is produced using the ratio (PA.9) [6]

$$D_R\left(\gamma -\mathrm{to}\mathrm{at}.RS-\mathrm{uh}\mathrm{to}\mathrm{at}.-\left(M\right)\right)=\frac{K_g^I\times f_y^I\times B_{de}^I}{K_g^R{\times }_y^R\times B_{de}^R}{D}_I\left(\gamma -\mathrm{to}\mathrm{at}\mathrm{.one}M\mathrm{uh}\mathrm{AT}-\mathrm{uh}\mathrm{to}\mathrm{at}.-\left(M\right)\right),\left(P\mathrm{BUT}\mathrm{.eighteen}\right)$$

можно получить, отнеся величину критического заряда G_crit=Q_C, создаваемую ТЗЧ в чувствительной области структуры МДП, к величине поглощенной дозы D, от воздействующей ТЗЧ:Value of the constant $$K_g^I$$

can be obtained by attributing the critical charge value G _crit = Q _C created by the TZC in the sensitive region of the MIS structure to the absorbed dose D from the acting TZC:

$$K_g^I\left[\frac{\mathrm{TO}l}{\mathrm{from}{\mathrm{<figure-callout\; id="3"\; label="m"\; filenames="00000147.png"\; state="\{\{state\}\}">m</figure-callout>}}^3\cdot R\mathrm{but}d\left(M\right)}\right]=\frac{Q_C\left[\mathrm{TO}l\right]}{\nu \left[\mathrm{from}{m}^3\right]\times D_I\left[R\mathrm{but}d\left(M\right)\right]}=\frac{{\rho }_C\left[\frac{\mathrm{TO}l}{\mathrm{from}{m}^3}\right]}{D_I\left[R\mathrm{but}d\left(M\right)\right]},\left(P\mathrm{BUT}.19\right)$$

where: ρ _C is the critical charge density; ν = a × b × c = A × t _PS - the volume of HO; A = a × b is the surface area of the HO; t _PS = s = s _min - the thickness of the instrument layer (Figure 5). The value of Q _{C is} taken into account (PA2), (PA.3) equal to [7]

$$Q_C\left[\mathrm{TO}l\right]=\frac{q\left[\mathrm{TO}l\right]\times E_{tot}^I\left[M\mathrm{uh}\mathrm{AT}\right]}{w\left(M\right)\left[\frac{M\mathrm{uh}\mathrm{AT}}{ehp}\right]}=\frac{q\left[\mathrm{TO}l\right]\times LE{T}_{TH}\left[\frac{M\mathrm{uh}\mathrm{AT}\cdot \mathrm{from}{m}^2}{g}\right]\times \rho \left[\frac{g}{\mathrm{from}{m}^3}\right]\times s\left[\mathrm{from}m\right]}{w_{ehp}\left(M\right)\left[\frac{M\mathrm{uh}\mathrm{AT}}{ehp}\right]},\left(P\mathrm{BUT}.20\right)$$

where s - corresponds to the length of the spatial chord when a single TZZh falls at arbitrary angles to the front (inverse) surface of the chip structure (Figure 5). The value of the absorbed dose from one TZC is taken reduced to the entire volume of the HO for an arbitrary value of the chord length s and equal to:

$$D_I\left[R\mathrm{but}d\left(M\right)\right]=\frac{E_{tot}^I\left[M\mathrm{uh}\mathrm{AT}\right]\times \mathrm{1,6}\cdot {10}^{-6}\left[\frac{\mathrm{uh}Rg}{M\mathrm{uh}\mathrm{AT}}\right]}{\mathrm{one\; hundred}\left[\frac{\mathrm{uh}Rg}{g\cdot R\mathrm{but}d\left(M\right)}\right]\times \rho \left[\frac{g}{\mathrm{from}{m}^3}\right]\times \nu \left[\mathrm{from}{m}^3\right]},\left(P\mathrm{BUT}.21\right)$$

Substituting (PA.2) and (PA.3) in (PA.21), get

$$\begin{array}{l}{D}_I\left[R\mathrm{but}d\left(M\right)\right]=\frac{LE{T}_{TH}\left[\frac{M\mathrm{uh}\mathrm{AT}\cdot \mathrm{from}{m}^2}{g}\right]\times \rho \left[\frac{g}{\mathrm{from}{m}^3}\right]\times s\left[\mathrm{from}m\right]\times \mathrm{1,6}\cdot {10}^{-6}\left[\frac{\mathrm{uh}Rg}{M\mathrm{uh}\mathrm{AT}}\right]}{\mathrm{one\; hundred}\left[\frac{\mathrm{uh}Rg}{g\cdot R\mathrm{but}d\left(M\right)}\right]\times \rho \left[\frac{g}{\mathrm{from}{m}^3}\right]\times \nu \left[\mathrm{from}{m}^3\right]}=\\ =\frac{LE{T}_{TH}\left[\frac{M\mathrm{uh}\mathrm{AT}\cdot \mathrm{from}{m}^2}{g}\right]\times s\left[\mathrm{from}m\right]\times \mathrm{1,6}\cdot {10}^{-6}\left[\frac{\mathrm{uh}Rg}{M\mathrm{uh}\mathrm{AT}}\right]}{\mathrm{one\; hundred}\left[\frac{\mathrm{uh}Rg}{g\cdot R\mathrm{but}d\left(M\right)}\right]\times \nu \left[\mathrm{from}{m}^3\right]}.\left(P\mathrm{BUT}.22\right)\end{array}$$

из (ПА. 19) при подстановке (ПА.20) и (ПА.22) в видеand the value of the constant $$K_g^I$$

from (PA. 19) when substituting (PA.20) and (PA.22) in the form

$$\begin{array}{l}{K}_g^I=\frac{q\left[\mathrm{TO}l\right]\times LE{T}_{TH}\left[\frac{M\mathrm{uh}\mathrm{AT}\cdot \mathrm{from}{m}^2}{g}\right]\times \rho \left[\frac{g}{\mathrm{from}{m}^3}\right]\times s\left[\mathrm{from}m\right]\times \mathrm{one\; hundred}\left[\frac{\mathrm{uh}Rg}{g\cdot R\mathrm{but}d\left(M\right)}\right]\times \nu \left[\mathrm{from}{m}^3\right]}{\nu \left[\mathrm{from}{m}^3\right]\times w_{ehp}\left(M\right)\left[\frac{M\mathrm{uh}\mathrm{AT}}{ehp}\right]\times LE{T}_{TH}\left[\frac{M\mathrm{uh}\mathrm{AT}\cdot \mathrm{from}{m}^2}{g}\right]\times s\left[\mathrm{from}m\right]\times \mathrm{1,6}\cdot {10}^{-6}\left[\frac{\mathrm{uh}Rg}{M\mathrm{uh}\mathrm{AT}}\right]}=\\ =\frac{q\left[\mathrm{TO}l\right]\times \rho \left[\frac{g}{\mathrm{from}{m}^3}\right]\times \mathrm{one\; hundred}\left[\frac{\mathrm{uh}Rg}{g\cdot R\mathrm{but}d\left(M\right)}\right]}{w_{ehp}\left(M\right)\left[\frac{M\mathrm{uh}\mathrm{AT}}{ehp}\right]\times \mathrm{1,6}\cdot {10}^{-6}\left[\frac{\mathrm{uh}Rg}{M\mathrm{uh}\mathrm{AT}}\right]}\left[\frac{\mathrm{TO}l}{\mathrm{from}{m}^3\cdot R\mathrm{but}d\left(M\right)}\right]=\left(P\mathrm{BUT}.23\right)\\ =\frac{\mathrm{1,6022}\cdot {10}^{-19}\left[\mathrm{TO}l\right]\times \mathrm{2,33}\left[\frac{g}{\mathrm{from}{m}^3}\right]\times {10}^2\left[\frac{\mathrm{uh}Rg}{g\cdot R\mathrm{but}d\left(Si\right)}\right]}{3.6\cdot {10}^{-6}\left(Si\right)\left[\frac{M\mathrm{uh}\mathrm{AT}}{ehp}\right]\times \mathrm{1,6}\cdot {10}^{-6}\left[\frac{\mathrm{uh}Rg}{M\mathrm{uh}\mathrm{AT}}\right]}=6.48\cdot {10}^{-6}\left[\frac{\mathrm{TO}l}{\mathrm{from}{m}^3\cdot R\mathrm{but}d\left(Si\right)}\right].\end{array}$$

A similar equality can be written for the dose rate P ₁ (γ-equiv. RS- (M)).

[Кл·см^-3·рад(SiO₂)^-1] для источника рентгеновского излучения 10 кэВ и $$K_g^R=\mathrm{1,3}\cdot {10}^{-6}$$

[Кл·см^-3·рад(SiO₂)^-1] для нуклидного источника Со⁶⁰ [6].In (PA.17) accept $$K_g^R=1.4\cdot {10}^{-6}$$

[C · cm ^-3 · rad (SiO ₂ ) ^-1 ] for an X-ray source of 10 keV and $$K_g^R=1.3\cdot {10}^{-6}$$

[C · cm ^-3 · rad (SiO ₂ ) ^-1 ] for the nuclide source Co ⁶⁰ [6].

Table PA.2 shows the sizes of the sensitive regions of the MIS structures as part of the CMOS / KND LIS technology adopted for calculating sensitivity to SEE and TID effects by gamma-ray quanta of MUs and X-ray radiation of EPCs. Given the known values of the parameters of the MIS structures and geometric parameters according to the data in Table PA.2, the results of irradiation at one source are corrected for the conditions of irradiation at another and the concept of relative efficiency coefficient, COE (RDEF) is introduced on the basis of (PA.9)

$$RDEF=\frac{D_R\left(\gamma -\mathrm{to}\mathrm{at}.RS-\mathrm{uh}\mathrm{to}\mathrm{at}.-\left(M\right)\right)}{LE{T}_{TH}}=\frac{K_g^I\times f_y^I\times B_{de}^I\times \rho \times s_{\max }}{K_g^R\times f_y^R\times B_{de}^R\times w\left(M\right)\times g\left(\gamma -\mathrm{to}\mathrm{at}\mathrm{.one}M\mathrm{uh}\mathrm{AT}-\mathrm{uh}\mathrm{to}\mathrm{at}.-\left(M\right)\right)\times \nu }|{}_{Q_t=const}(P\mathrm{BUT}.24)$$

.in units $$\left[\left(R\mathrm{but}d\left(M\right)-RS\right)/\left(\frac{M\mathrm{uh}\mathrm{AT}\cdot \mathrm{from}{m}^2}{g}\right)\right]$$

.

Table PA.3 shows the thicknesses of the main layers of the MIS heterostructure.

и $$K_g^R$$

удобнее использовать тестовые транзисторы МДП при аналогичных параметрах A и t_ox, что и у транзисторов МДП основной схемы.For determining $$B_{de}^R$$

and $$K_g^R$$

it is more convenient to use MIS test transistors with the same parameters A and t _ox as for MOS transistors of the main circuit.

Table PA.3 Structure element The thickness of the layers, microns Substrate 470 ± 50 Silicon islands 0.30 ± 0.05 p-pocket 0.30 ± 0.05 Gate dielectric 0.030 ± 0.003 Polysilicon layer 0.45 ± 0.05 Source and drain areas (for p + n n +) 0.30 ± 0.05

In the calculations take:

- geometric parameters of the “islands” of p- and n-channel MOS structures for assessing radiation sensitivity to SEE effects;

- geometric parameters of MOS structures (including p-pocket for an n-channel MOS transistor) for calculating sensitivity to TID;

- angular dimensions of rectangular sensitive areas to assess the likelihood of the implementation of the "worst case";

- as a threshold value of LET _TH , 28 MeV cm ² / g was taken;

- to calculate the critical charge Q _CRIT = Q _C use the ratio presented by Robinson et al. [7] for IMS of a number of technologies (including NMOS, CMOS / surround, CMOS / SOS, i ² L, GaAs, ECL, CMOS / SOI bipolar VHSIC):

$$Q_{crit}=\left(0.23qC\left[\mathrm{TO}l/m\mathrm{to}{m}^2\right]\right)L^2\left(P\mathrm{BUT}.25\right)$$

where: q = 1,60022 · 10 ^-19 C / e is the elementary charge; C is the capacity of the depleted layer in the TIR structure; L is the lateral size of the MDP structure, [μm];

- to calculate the threshold value of LET _TH , a relation is used that relates the energy of a particle absorbed in the depletion layer E _dept and the energy of formation of an electron-hole pair w _ehp [8]

$$Q_{dept}=q\times E_{dept}/w_{ehp}.\left(P\mathrm{BUT}.26\right)$$

where a values of w _ehp for a number of elements are given in Table PA.4, which also presents the properties of pure germanium, silicon, gallium arsenide, silicon dioxide, silicon nitrile, and aluminum dioxide at a temperature of 27 ° C.

Using these data, it is possible, as a first approximation, to calculate the LET _T , which is the minimum necessary to create an SEE.

Table PA.4 Material / Properties Ge Si Gaas SiO ₂ Si ₃ N ₄ Al ₂ O ₃ Type of Semiconductor Semiconductor Semiconductor Insulator Insulator Insulator Atomic/ 72.6 28.09 144.63 60.08 140.27 101.96 molecular weight Density (g / cm ³ ) 5.33 2,33 5.32 2.27 3.44 3.97 Energy generation 2,8 3.6 4.8 17.0 10.8 19.1 electron-hole pairs (eV)

используют соотношение- to calculate the maximum chord length $$s_{\mathrm{<figure-callout\; id="2"\; label="max"\; filenames="00000146.png"\; state="\{\{state\}\}">max</figure-callout>}}^2$$

use the ratio

$${\mathrm{<figure-callout\; id="2"\; label="s\; max"\; filenames="00000146.png"\; state="\{\{state\}\}">s\; </figure-callout>}}_{\max }^{}=a^2+{\mathrm{<figure-callout\; id="2"\; label="b"\; filenames="00000146.png"\; state="\{\{state\}\}">b</figure-callout>}}^2+{\mathrm{<figure-callout\; id="2"\; label="c"\; filenames="00000146.png"\; state="\{\{state\}\}">c</figure-callout>}}^2,\left(P\mathrm{BUT}.27\right)$$

- dimensions of quantities:

- q = 1.6022 · 10 ^-19 Cl = 1.6022 · 10 ^-7 nC;

- ρ = 2.33 g · cm ³ ;

- w _ehp = 3.6 eV = 3.6 · 10 ^-6 MeV.

The minimum value of LET _TH will correspond to the case for which the failure can be calculated from the ratio:

$$LE{T}_{TH}=Q_{crit}\times w_{ehp}/q\times \rho \times s_{\max }.\left(P\mathrm{BUT}.28\right)$$

Then equality (PA.14) taking into account (PA.11) and (PA.13) can be written in the form:

$$LE{T}_{TH}=2.21\cdot {10}^8\times s_{\max }\left(m\mathrm{to}m\right)\left[\frac{M\mathrm{uh}\mathrm{AT}\times m\mathrm{to}{m}^2}{mg}\right],\left(P\mathrm{BUT}.29\right)$$

or

$$LE{T}_{TH}=2.21\times s_{\max }\left(m\mathrm{to}m\right)\left[\frac{M\mathrm{uh}\mathrm{AT}\times m\mathrm{to}{m}^2}{mg}\right],\left(P\mathrm{BUT}.29-\mathrm{but}\right)$$

or

$$LE{T}_{TH}=2.21\cdot {10}^3\times s_{\max }\left(m\mathrm{to}m\right)\left[\frac{M\mathrm{uh}\mathrm{AT}\times m\mathrm{to}{m}^2}{mg}\right],\left(P\mathrm{BUT}.29-b\right)$$

Literature

1. Zaitov F.A., Litvinova N.M., Savitskaya V.G., Sredin V.G. Radiation resistance in optoelectronics. - M .: Military Publishing House, 1987, p.272.

2. Martin Denton, European Organization for Nuclear Research. CERN Training, April 10-12, 2000 "Radiation effects on electronic componente and circuits for LHC", Radiation Effects on Electronic Component and Circuits, First course: Radiation Effects on Electronic Component; Second course: Radiation Effect on Electronics Circuits, CERN-EP-ATE / CEA Sacaly DAPHNIA, Internet.

3. Titus L., Johnson G.H., Schrimpf R. D., Galloway K.F. Single event burnout of power bipolar junction transistors // IEEE Transactions on Nuclear Science, 1991 .-- Vol. NS-38. - No.6. - pp. 1315-1322, 1991.

4. Edmonds L.D., Barnes C.E., Scheick L.Z. Space Radiation Effects in Microelectronics. JPC Publikation 00-06 // Passadena, California: Jet Propulsion Laboratory, California Institute of Technology, National Aeronautics and Space Administration, May 2000.

5. Artemov A.D., Danilin Yu.I., Kuryshov A.B., Sobolev S.A., Frolov A.S. // Questions of atomic science and technology. Ser. Physics of Radiation Exposure to Radio-Electronic Equipment, 1989 - Issue 4, p. 50-56.

6. Dozier S.M., Brown D.B. The Use of Low Energy X-Ray for Device Testing - a Comparison With Co-60 Radiation // IEEE Transactions on Nuclear Science, 1975.-. V.NS-30. - No.6. - pp. 4382-4387.

7. Robinson P., Lee W., Aguero R., Gabriel S. Anomalies due to single event upsets // Journal of Spacecraft of Spacecraft and Rockets, Mar-Apr 1994. - Vol.31. - No.2. - pp. 166-171.

8. LaBel, K. Single event effects specification // radhome. gsfc.nasa.gov/radhome/papers/seespec.htm, 1993. Last updated: Dr. Holbert's EEE460 Course. January 18, 2006.

Claims (7)

1. The method of testing semiconductor LSI CMOS / LPC technology for resistance to the effects of single failures from the effects of heavy charged particles (TZZ) of outer space by irradiating a limited selection of LSI pulsed ionizing radiation, characterized in that the irradiation of a limited sample of LSI produce gamma-neutron radiation from pulsed nuclear a reactor (INR) with an average energy of 1.0-3.0 MeV or pulsed x-ray radiation from electrophysical installations (EFU) with an equivalent dose that causes the gene to be equal to the TZh a radiation-induced charge in a sensitive LSI, and to determine the resistance to TZZ with a threshold value of linear energy loss LET _TH in the range from units to hundreds MeV · cm ² / mg, use the value of the coefficient of relative efficiency RDEF (Relative Dose Enhancement Factor) exposure to the total absorbed dose of x-ray or gamma radiation relative to the value of LET _TH using the ratio
$$RDEF=\frac{D_R\left(\gamma -\mathrm{to}\mathrm{at}.RS-\mathrm{uh}\mathrm{to}\mathrm{at}.-\left(M\right)\right)}{LE{T}_{TH}}=\frac{\rho \times s_{\max }}{K_g^R\times f_y^R\times B_{de}^R\times w\left(M\right)\times g\left(\gamma -\mathrm{to}\mathrm{at}\mathrm{.one}M\mathrm{uh}\mathrm{AT}-\mathrm{uh}\mathrm{to}\mathrm{at}.-\left(M\right)\right)\times \nu }|{}_{Q_t=const}$$

in units $$\left[\left(R\mathrm{but}d\left(M\right)-RS\right)/\left(\frac{M\mathrm{uh}\mathrm{AT}\cdot \mathrm{from}{m}^2}{g}\right)\right]$$

,
where ρ is the density of the irradiated semiconductor material, g · cm ^-3 ; $$s_{\max }=\sqrt{a^2+b^2+c^2}$$

- the maximum value of the chord in the chip of the TIR structure, cm; a is the width of the chip of the TIR structure, cm; b is the length of the chip, cm; c is the height of the chip; cm; $$K_g^R$$

is the constant of radiation generation of charge carriers, C · cm ^-3. rad (M) ^-1 ; $$f_y^R$$

- the limit value of the fraction of non-recombinant radiation-induced charge in the MIS structure when exposed to the radiation of a simulator (MU) in the presence of an applied electric field of intensity E, MB · cm ^-1 ; $$B_{de}^R$$

- the factor of dose accumulation in the structure of the directivity gain of gamma-x-ray radiation MU with the spectrum of quanta RS; w (M) is the energy of formation of one electron-hole pair (ehp) in a given material (M) Si or SiO ₂ , MeV; g (γ-sq. 1 MeV-eq .- (M)) is the generation constant of ehp by gamma-ray radiation with the equivalent quantum energy E _KV. = 1 MeV in the material (M), ehp · cm ^-3 · rad (M) _-1 ; ν = α × b × c is the volume of the sensitive region, cm ³ , And _t = α × b is the surface area of the chip, cm ² ; c = t _PS - the thickness of the instrument layer of the TIR structure, cm; Q _t is the equivalent value of the radiation-induced charge by gamma-ray radiation in the structure of the MIS, C; ν = L × B × t _PS ; $$K_g^I$$

, $$f_y^I$$

, $$B_{de}^I$$

- values of similar constants when irradiating the TCD structure of the MIS. 2. The method according to claim 1, characterized in that, in order to take into account the kinetics of accumulation and relaxation of the charge of radiation-induced carriers in an electric field, the coefficient value $$f_y^R$$

determined from the ratio
$$f_y^{X-Ray}\left(E\right)={\left[1.30/\left(E+0.113\right)\right]}^{-\mathrm{one}}$$

for the energy of x-ray quanta E _X-Ray = 0.01-0.3 MeV and
$$f_y^{X-Ray,\gamma -\mathrm{to}\mathrm{at}.}={\left[0.27/\left(E+\mathrm{0,084}\right)+\mathrm{one}\right]}^{-\mathrm{one}}$$

for the energy of gamma-ray quanta of a nuclear reactor or EFU E _{NR, X-Ray} = 1 ... 6 MeV. 3. The method according to claim 1 or 2, characterized in that, in order to take into account the design features of the transistor structure of the MOS / KND, to assess the value of the dose accumulation factor $$B_{de}^R$$

use the dependence of the value $$B_{de}^R$$

from the thickness of the gate oxide t _ox in the form
$$B_{de}^R=-6.43\cdot {10}^{-\mathrm{four}}\times t_{ox}+\mathrm{1,4857}$$

,
where t _ox in nm, for the energy of x-ray quanta E _X-Ray = 0.01-0.3 MeV and $$B_{de}^{X-Ray}\approx \mathrm{one}$$

for the energy of gamma-X-ray quanta of a nuclear reactor or EFI with an energy of E _{NR, X-Ray} = 1 ... 6 MeV. 4. The method according to claim 1, characterized in that in the manufacture of a dielectric of a gate oxide of a MIS structure based on silicon dioxide (M = SiO ₂ ), the radiation generation constant of electron-hole pairs in it is taken equal $$K_g^R=1.4\cdot {10}^{-6}$$

C · cm ^-3 · rad (SiO ₂ ) ^-1 for an X-ray source of 10 keV and $$K_g^R=1.3\cdot {10}^{-6}$$

C · cm ^-3 · rad (SiO ₂ ) ^-1 for a nuclear reactor or EFI. 5. The method according to claim 1, characterized in that, in order to reduce the cost of testing, the equivalent absorbed dose of gamma-ray radiation of a nuclear reactor or X-ray radiation of an EF with an RS spectrum is determined using the ratio
$$D_R\left(\gamma -\mathrm{to}\mathrm{at}.RS-\mathrm{uh}\mathrm{to}\mathrm{at}.-\left(M\right)\right)=RDEF\times LE{T}_{TH}.$$

6. The method according to claim 1, characterized in that in order to take into account the design features of the MOS / KND transistor structure, to evaluate the value of LET _TH from the SLC in MIS structures with a gate oxide thickness t _ox ≥40 nm, use the ratio
$$LE{T}_{TH}=2.21\cdot {10}^3\times s_{\max }\left(m\mathrm{to}m\right)\left[\frac{M\mathrm{uh}\mathrm{AT}\cdot \mathrm{from}{m}^2}{g}\right].$$

7. The method according to claim 1 or 6, characterized in that to increase the reliability of determining the value $$F_{\Sigma }=K_g^R\times f_y^R\times B_{de}^R$$

it is calculated from the ratio
$$F_{\Sigma }=2.21\cdot {10}^3\frac{\rho \times s_{\max }^2}{RDEF\times w\left(M\right)\times g\left(\gamma -\mathrm{to}\mathrm{at}\mathrm{.one}M\mathrm{uh}\mathrm{AT}-\mathrm{uh}\mathrm{to}\mathrm{at}.-\left(M\right)\right)\times \nu }\left[\frac{\mathrm{TO}l}{\mathrm{from}{m}^3\cdot R\mathrm{but}d\left(M\right)}\right],$$

which is subsequently used to determine the RDEF values and the equivalent dose D _R (γ-sq. RS-eq .- (M)) simulating the effects of a single failure (SEE) of the gamma-ray radiation source of the BIS CMOS / LPC technology of a similar technology and design.

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