CN112379240B - Method for evaluating total dose radiation performance of radiation-resistant reinforced SOI material - Google Patents
Method for evaluating total dose radiation performance of radiation-resistant reinforced SOI material Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 67
- 230000005855 radiation Effects 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title abstract description 17
- 238000012360 testing method Methods 0.000 claims abstract description 61
- 238000010893 electron trap Methods 0.000 claims abstract description 38
- 238000011156 evaluation Methods 0.000 claims abstract description 11
- 239000012612 commercial material Substances 0.000 claims abstract description 9
- 238000002347 injection Methods 0.000 claims abstract description 6
- 239000007924 injection Substances 0.000 claims abstract description 6
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000012779 reinforcing material Substances 0.000 abstract description 29
- 238000012546 transfer Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000002787 reinforcement Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2648—Characterising semiconductor materials
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Abstract
The invention relates to a total dose radiation performance evaluation method of a radiation-resistant reinforced SOI material, which adopts a transistor manufactured based on a commercial SOI material and a reinforced SOI material as a test sample; carrying out a total dose irradiation test under the same condition on a test sample based on a commercial material and a reinforcing material, and extracting oxide trap charge density introduced by radiation in an oxide buried layer; carrying out hot carrier injection test on the transistor made of the reinforcing material, and extracting electron trap charge density introduced by hot carrier stress in the oxide buried layer; and obtaining the electron trap trapping coefficient of the buried oxide layer of the reinforcing material based on the three trap charge densities. The radiation resistance of the reinforced SOI material can be obtained through the capture coefficient and hot carrier stress test. The method has the advantage that the total dose radiation resistance of the reinforced SOI material in the same batch can be rapidly obtained through a small amount of irradiation test and a hot carrier stress test.
Description
Technical Field
The invention relates to the technical field of effect evaluation of special environment application of semiconductor materials and devices, in particular to a total dose radiation performance evaluation method of a radiation-resistant reinforced SOI material, belonging to the technical field of microelectronic testing and radiation resistance.
Background
SOI, silicon on insulator, is a process technology for fabricating silicon devices from thin layers of silicon on an insulating silicon dioxide substrate. The SOI CMOS device has excellent single particle resistance and instantaneous radiation resistance due to the existence of the buried oxide layer. Meanwhile, the full dielectric isolation prevents the latch-up effect of the bulk silicon CMOS device. Therefore, the method has good application prospect in the radiation environment. But also due to the presence of the buried oxide layer, its resistance to total dose radiation is relatively poor. The total dose radiation performance of the SOI device can be greatly improved aiming at the reinforcement of the buried oxide layer of the SOI material. However, how to evaluate the total dose radiation resistance of the reinforced SOI material quickly and accurately at low cost is a problem that must be addressed. On one hand, the established evaluation method should avoid carrying out total dose irradiation tests on all devices, thereby saving economic and time costs; on the other hand, it should be possible to take into account the differences between the devices. This requires the design of a completely new test evaluation method.
Disclosure of Invention
The invention aims to provide a total dose radiation performance evaluation method of a radiation-resistant reinforced SOI material. The method adopts a transistor manufactured based on commercial SOI materials and reinforced SOI materials as a test sample; carrying out a total dose irradiation test under the same condition on a test sample based on a commercial material and a reinforcing material, wherein the total dose irradiation bias condition is the worst bias condition of a back gate transistor, and obtaining the density of oxide trap charges introduced by radiation in an oxide buried layer of an SOI material by establishing a relation between a threshold voltage drift amount and the oxide trap charges; considering that the effect of oxide trap charges introduced in the buried oxide layer of the SOI material by high-dose-rate short-time irradiation is far greater than the effect of interface states, the effect of the interface states can be ignored; carrying out hot carrier injection test on a transistor made of a reinforcing material, and obtaining electron trap charge density introduced by hot carrier stress in an oxide buried layer by establishing a relation between threshold voltage drift amount and electron trap charge; the electron trap trapping coefficient of the buried oxide layer of the reinforced SOI material can be obtained based on the commercial SOI material, the density of the oxide trap charge in the reinforced SOI material, and the density of the electron trap charge in the reinforced SOI material; carrying out hot carrier stress test on unirradiated reinforcing material transistors in the same batch to obtain electron trap charge density, and combining the existing electron trap charge trapping coefficient to obtain threshold voltage drift amount of the back gate transistor of the unirradiated reinforcing material transistors after total dose irradiation, so as to estimate total dose radiation performance of the reinforcing material. The method has the advantage that the total dose radiation resistance of the reinforced SOI material devices in the same batch can be rapidly obtained only by carrying out an irradiation test on a small amount of test samples.
The invention relates to a total dose performance evaluation method of a radiation-resistant reinforced SOI material, which comprises the following steps:
a. transistors manufactured by adopting the same layout based on commercial SOI materials and reinforced SOI materials are used as test samples;
b. carrying out a total dose irradiation test under the same condition on a transistor based on a commercial material and a reinforcing material, and extracting oxide trap charge density introduced by radiation in an oxide buried layer;
in the total dose irradiation test, the worst irradiation bias of the back gate transistor is adopted, and the oxide trap charge density is extracted by establishing the relation between the threshold voltage drift amount of the back gate transistor and the radiation induced trap charge, wherein the formula (1):
wherein DeltaV TB For radiation-induced back-gate transistor threshold voltage drift, T BOX The thickness of the buried oxide layer of the SOI material is q is unit charge epsilon OX Dielectric constant delta N of SOI material oxide buried layer OX，BOX Oxide trap charge density introduced in the buried oxide layer of the SOI material for radiation;
c. carrying out hot carrier injection test on the transistor made of the reinforcing material, and extracting electron trap charge density introduced by hot carrier stress in the oxide buried layer;
establishing a relation between a back gate transistor threshold voltage drift amount and electron trap charges caused by hot carrier stress, extracting electron trap charge density, and adopting a formula (2):
wherein DeltaV TB，H Is the threshold voltage drift quantity delta N of the back gate transistor caused by hot carrier stress OE，BOX Electron trap charge density introduced into the buried oxide layer of the SOI material for hot carrier stress;
d. based on the three trap charge densities, the electron trap trapping coefficient of the buried oxide layer of the reinforcing material is obtained, and the electron trap trapping coefficient alpha of the buried oxide layer of the reinforcing material is calculated through an electron trap charge trapping coefficient and hot carrier stress test of the buried oxide layer of the reinforcing material by the following formula: formula (3)
ΔN OX，BOX′ ＝ΔN OX,BOX -αΔN OE,BOX (3)
Wherein DeltaN OX，BOX For radiating oxide trap charges, delta N, introduced in buried oxide layers of commercial SOI materials OX，BOX′ For radiating oxide trap charges, delta N, introduced in buried oxide layers of reinforced SOI materials OE，BOX The electron trap charges introduced into the buried oxide layer for hot carrier stress can obtain the total dose radiation performance of the reinforcing material.
The invention relates to a total dose radiation performance evaluation method of a radiation-resistant reinforced SOI material, which comprises the following steps:
a. transistors manufactured by the same layout based on commercial SOI materials and reinforced SOI materials are used as test samples:
b. carrying out a total dose irradiation test under the same conditions on the basis of a commercial material and a reinforcement test sample, and extracting oxide trap charge density introduced by radiation into an oxide buried layer:
the method comprises the steps of firstly, carrying out a total dose irradiation test on a transistor manufactured by a commercial SOI material, wherein the irradiation bias is the worst irradiation bias of a back gate transistor, testing a transfer characteristic curve of a test sample before and after the irradiation test, extracting a threshold voltage variation value after the specified total dose irradiation by using a fixed current method, and extracting the oxide trap charge density introduced by the total dose irradiation in a commercial material oxide buried layer by using a formula (1);
wherein DeltaV TB For radiation-induced back-gate transistor threshold voltage drift, T BOX The thickness of the buried oxide layer of the SOI material is q is unit charge epsilon OX Is SOI (silicon on insulator)Dielectric constant, delta N, of buried oxide layer of material OX，BOX Oxide trap charge density introduced in the buried oxide layer of the SOI material for radiation;
secondly, carrying out a total dose irradiation test on a transistor manufactured by adopting a reinforcing material under the same condition as a commercial material transistor, and extracting total dose irradiation by adopting the same method and introducing the total dose irradiation into an oxide buried layer of the reinforcing material to obtain oxide trap charge density;
c. carrying out hot carrier injection test on a transistor made of a reinforcing material, and extracting electron trap charge density introduced by hot carrier stress in an oxide buried layer:
carrying out a hot carrier stress test on the reinforcement material back gate transistor, testing a transfer characteristic curve of the back gate transistor before and after the stress test, extracting a threshold voltage drift amount by using a fixed current method, and extracting electron trap charge density introduced by the hot carrier stress in the reinforcement material oxide buried layer by using a formula (2);
wherein DeltaV TB，H Is the threshold voltage drift quantity delta N of the back gate transistor caused by hot carrier stress OE，BOX Electron trap charge density introduced into the buried oxide layer of the SOI material for hot carrier stress;
d. based on the three trap charge densities, the electron trap trapping coefficient of the buried oxide layer of the reinforcing material is obtained, and the radiation resistance of the reinforcing material is obtained through the trapping coefficient and hot carrier stress test:
firstly, obtaining an electron trap charge trapping coefficient alpha of an oxide buried layer of a reinforcing material through a formula (3);
ΔN OX，BOX′ ＝ΔN OX,BOX -αΔN OE，BOX (3)
wherein DeltaN OX，BOX For radiating oxide trap charges, delta N, introduced in buried oxide layers of commercial SOI materials OX，BOX′ Oxide burying for radiation in reinforced SOI materialThe oxide trapping charge introduced in the layer, the above two parameters can be obtained by step b; ΔN OEBOX The electron trapping charge introduced into the buried oxide layer for hot carrier stress can be obtained by step c;
step two, carrying out hot carrier stress tests in the step c on other reinforcing material transistors in the batch to obtain electron trap charge density introduced by the hot carrier stress in the reinforcing material oxide buried layer;
thirdly, obtaining oxide trap charges delta N introduced by the buried oxide layer after total dose irradiation through a formula (3) OX，BOX′ And further obtaining the threshold voltage drift amount of the back gate transistor caused by total dose irradiation, so as to estimate the total dose radiation performance of the reinforcing material.
The total dose radiation performance evaluation method of the radiation-resistant reinforced SOI material has the advantages that compared with the prior art, the total dose radiation performance evaluation method has the following advantages:
the method has the advantage that the total dose radiation resistance of the reinforced SOI material in the same batch can be rapidly obtained through a small amount of irradiation test and a hot carrier stress test.
Drawings
FIG. 1 is a flow chart of the present invention;
FIG. 2 is a graph of back gate transfer characteristics of a commercial SOI material transistor before and after total dose irradiation;
FIG. 3 is a graph of back gate characteristic transfer for a transistor of ruggedized SOI material before and after total dose irradiation;
fig. 4 is a graph of transfer characteristics of a transistor of a reinforced SOI material before and after hot carrier stress.
Detailed Description
The invention will now be described in detail by way of example with reference to the accompanying drawings.
Examples
The method for evaluating the total dose radiation performance of the radiation-resistant reinforced SOI material comprises the following steps of:
a. transistors fabricated based on commercial SOI materials and reinforced SOI materials were used as test samples:
for commercial SOI materials and reinforced SOI materials, transistors are manufactured by adopting the same layout, 1 commercial material transistor and 2 reinforced material transistors are taken as test samples, and the test samples are respectively marked as 1# test samples, 2# test samples and 3# test samples;
b. carrying out a total dose irradiation test under the same conditions on the basis of a commercial material and a reinforcement test sample, and extracting oxide trap charge density introduced by radiation into an oxide buried layer:
the first step, carrying out a total dose irradiation test under a transmission state bias on a 1# transistor, wherein the total dose is 100krad (Si), and testing the transfer characteristic curve of the 1# device before and after the total dose irradiation, as shown in figure 2, extracting the threshold voltage drift amount of the 1# device by a fixed current method to obtain DeltaV TB，R =7.94V, according to formula (1):
obtaining the oxide trap charge density delta N introduced by total dose irradiation in the oxide buried layer of the No. 1 transistor OX，BOX ＝1.18×10 12 /cm 2 ；
Secondly, carrying out a total dose irradiation test on the 2# transistor under the same condition as the 1# transistor to obtain transfer characteristic curves before and after total dose irradiation of the 2# device, as shown in fig. 3; the threshold voltage drift amount of the 2# device is extracted by a fixed current method, and the DeltaV can be obtained TB，R′ The total dose irradiation is introduced into the oxide buried layer of the No. 2 transistor to obtain the oxide trap charge density delta N by the same method OX，BOX′ ＝0.33×10 12 /cm 2 ；
c. Carrying out hot carrier injection test on a transistor made of a reinforcing material, and extracting electron trap charge density introduced by hot carrier stress in an oxide buried layer:
carrying out a hot carrier stress test on the 3# transistor, and testing a transfer characteristic curve of the back gate transistor before and after the stress test, as shown in fig. 4; obtaining threshold voltage shift amount DeltaV caused by hot carrier stress by using fixed current method TB，H =6.39v, according to formula (2)
Obtaining electron trap charge density delta N introduced by hot carrier stress in buried oxide layer of 3# transistor OE，BOX ＝0.95×10 12 /cm 2 ；
d. Based on the three trap charge densities, the electron trap trapping coefficient of the buried oxide layer of the reinforcing material is obtained, and the radiation resistance of the reinforcing material can be obtained through the electron trap charge trapping coefficient of the buried oxide layer of the reinforcing material and a hot carrier stress test:
in the first step, the following formula (3):
ΔN OX，BOX' ＝ΔN OX,BOX -αΔN OE，BOX (3)
obtaining an electron trap charge trapping coefficient alpha=0.89 of the buried oxide layer of the reinforcing material;
step two, carrying out hot carrier stress test in step c on other transistors of the batch of reinforcing materials to obtain electron trap charge density introduced by hot carrier stress in an oxide buried layer of the transistors;
and thirdly, obtaining oxide trap charges introduced by 100krad (Si) total dose irradiation on oxide buried layers of other transistors through a formula, and further obtaining the threshold voltage drift amount of the back gate transistor caused by the total dose irradiation, thereby evaluating the radiation resistance of the back gate transistor.
Claims (1)
1. The total dose performance evaluation method of the radiation-resistant reinforced SOI material is characterized by comprising the following steps of:
a. transistors manufactured by adopting the same layout based on commercial SOI materials and reinforced SOI materials are used as test samples;
b. carrying out a total dose irradiation test under the same condition on a transistor based on a commercial material and a reinforced SOI material, and extracting oxide trap charge density introduced by radiation in an oxide buried layer;
in the total dose irradiation test, the worst irradiation bias of the back gate transistor is adopted, and the oxide trap charge density is extracted by establishing the relation between the threshold voltage drift amount of the back gate transistor and the radiation induced trap charge, wherein the formula (1):
wherein DeltaV TB，R For radiation-induced back-gate transistor threshold voltage drift, T BOX The thickness of the buried oxide layer of the SOI material is q is unit charge epsilon OX Dielectric constant delta N of SOI material oxide buried layer OX，BOX Oxide trap charge density introduced in the buried oxide layer of the SOI material for radiation;
c. carrying out hot carrier injection test on a transistor manufactured by reinforced SOI material, and extracting electron trap charge density introduced by hot carrier stress in an oxide buried layer;
establishing a relation between a back gate transistor threshold voltage drift amount and electron trap charges caused by hot carrier stress, extracting electron trap charge density, and adopting a formula (2):
wherein DeltaV TB，H Is the threshold voltage drift quantity delta N of the back gate transistor caused by hot carrier stress OE，BOX Electron trap charge density introduced into the buried oxide layer of the SOI material for hot carrier stress;
d. based on the three trap charge densities, obtaining an electron trap trapping coefficient of the reinforced SOI material buried oxide layer, calculating an electron trap trapping coefficient alpha of the reinforced SOI material buried oxide layer through an electron trap charge trapping coefficient and hot carrier stress test of the reinforced SOI material buried oxide layer by the following formula: formula (3)
In the first step, the following formula (3):
ΔN OX,BOX′ ＝ΔN OX,BOX -αΔN OE,BOX (3)
wherein DeltaN OX，BOX For radiating oxide trap charge density, delta N, introduced in buried oxide layers of commercial SOI materials OX，BOX′ For radiating the charge density of oxide traps, delta N, introduced in buried oxide layers of reinforced SOI material OE，BOX Electron trap charge density introduced in the buried oxide layer for hot carrier stress;
step two, carrying out hot carrier stress test in step c on other transistors of the batch of reinforced SOI material to obtain electron trap charge density introduced by hot carrier stress in the oxide buried layer;
thirdly, obtaining the charge density of oxide traps introduced by 100krad total dose irradiation on oxide buried layers of other transistors through a formula (1), and further obtaining the threshold voltage drift amount of the back gate transistor caused by the total dose irradiation, thereby evaluating the radiation resistance of the back gate transistor.
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3935033A (en) * | 1970-07-18 | 1976-01-27 | Siemens Aktiengesellschaft | Method of improving the radiation resistance of silicon transistors with a silicon oxide coating |
| CN1763918A (en) * | 2005-09-02 | 2006-04-26 | 中国科学院上海微系统与信息技术研究所 | Reinforcement means based on the field-effect transistor anti-irradiation of the silicon materials on the insulator |
| RU2320049C2 (en) * | 2003-06-20 | 2008-03-20 | ГНЦ РФ Государственное учреждение научно-производственный комплекс "Технологический центр" при Московском государственном институте электронной техники /технический университет/ | Method for enhancing radiation resistance of cmos circuit components on soi substrate |
| CN101859783A (en) * | 2010-04-30 | 2010-10-13 | 北京大学 | SOI device for resisting total dose radiation and manufacturing method thereof |
| CN101859782A (en) * | 2010-04-30 | 2010-10-13 | 北京大学 | SOI device resistant to total dose radiation and manufacturing method thereof |
| CN102194827A (en) * | 2010-03-16 | 2011-09-21 | 北京大学 | High-dielectric-constant material-based irradiation-resistance SOI (Silicon on Insulator) device and manufacturing method thereof |
| CN106353666A (en) * | 2016-09-07 | 2017-01-25 | 成都天诚慧芯科技有限公司 | Deducting and deduction testing methods for <60>Co Gamma-ray radiation response of SOI (silicon on insulator) NMOSFET (N-channel metal oxide semiconductor field-effect transistor) |
| CN107946354A (en) * | 2017-11-17 | 2018-04-20 | 北京大学 | A kind of SOI FinFETs of anti-integral dose radiation and preparation method thereof |
| CN111426930A (en) * | 2020-03-30 | 2020-07-17 | 中国电子科技集团公司第五十八研究所 | Radiation-hardening-resistant SOI CMOS total dose radiation performance evaluation method |
-
2020
- 2020-11-13 CN CN202011266943.0A patent/CN112379240B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3935033A (en) * | 1970-07-18 | 1976-01-27 | Siemens Aktiengesellschaft | Method of improving the radiation resistance of silicon transistors with a silicon oxide coating |
| RU2320049C2 (en) * | 2003-06-20 | 2008-03-20 | ГНЦ РФ Государственное учреждение научно-производственный комплекс "Технологический центр" при Московском государственном институте электронной техники /технический университет/ | Method for enhancing radiation resistance of cmos circuit components on soi substrate |
| CN1763918A (en) * | 2005-09-02 | 2006-04-26 | 中国科学院上海微系统与信息技术研究所 | Reinforcement means based on the field-effect transistor anti-irradiation of the silicon materials on the insulator |
| CN102194827A (en) * | 2010-03-16 | 2011-09-21 | 北京大学 | High-dielectric-constant material-based irradiation-resistance SOI (Silicon on Insulator) device and manufacturing method thereof |
| CN101859783A (en) * | 2010-04-30 | 2010-10-13 | 北京大学 | SOI device for resisting total dose radiation and manufacturing method thereof |
| CN101859782A (en) * | 2010-04-30 | 2010-10-13 | 北京大学 | SOI device resistant to total dose radiation and manufacturing method thereof |
| CN106353666A (en) * | 2016-09-07 | 2017-01-25 | 成都天诚慧芯科技有限公司 | Deducting and deduction testing methods for <60>Co Gamma-ray radiation response of SOI (silicon on insulator) NMOSFET (N-channel metal oxide semiconductor field-effect transistor) |
| CN107946354A (en) * | 2017-11-17 | 2018-04-20 | 北京大学 | A kind of SOI FinFETs of anti-integral dose radiation and preparation method thereof |
| CN111426930A (en) * | 2020-03-30 | 2020-07-17 | 中国电子科技集团公司第五十八研究所 | Radiation-hardening-resistant SOI CMOS total dose radiation performance evaluation method |
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