CN106353666A - Deducting and deduction testing methods for <60>Co Gamma-ray radiation response of SOI (silicon on insulator) NMOSFET (N-channel metal oxide semiconductor field-effect transistor) - Google Patents
Deducting and deduction testing methods for <60>Co Gamma-ray radiation response of SOI (silicon on insulator) NMOSFET (N-channel metal oxide semiconductor field-effect transistor) Download PDFInfo
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Abstract
The invention provides deducting and deduction testing methods for <60>Co Gamma-ray radiation response of SOI (silicon on insulator) NMOSFET (N-channel metal oxide semiconductor field-effect transistor); in a very low electric field, two SOI NMOSFETs under same structure and process conditions are subjected to X-ray radiation and <60>Co Gamma-ray radiation respectively; ratios of threshold voltage drifts under X-ray radiation and <60>Co Gamma-ray radiation due to oxide layer trap charge are compared to extract a DEF (dose effect factor); radiation dose level of X-ray test data is multiplied by the DEF, threshold voltage drift value due to radiation is multiplied by the factor 0.7, and radiation response to <60>Co Gamma-ray is acquired accordingly; the methods have small application limits, Vth deduction is more accurate, mass radiation tests for <60>Co source can be omitted, testing cost is greatly reduced, the advantage of X-ray in facilitating and quickening the provision of feedback is given to full play, and research and development efficiency is improved.
Description
Technical field
The present invention relates to a kind of soi nmosfet60The response of co gamma Rays is derived and derivation test method, particularly
Be related to a kind of be applied to semiconductor components and devices to soi nmosfet's60The derivation derived of response of co gamma Rays and
Derivation test method.
Background technology
For a long time, the accumulated dose ionizing radiation test of semiconductor components and devices has been used up co source as radiation source.The U.S.
Military's testing standard mil-std-883c also specifies60The standard testing source that co gamma-rays are tested for integral dose radiation.But large-scale co
Naturally radioactive can only be used in source60Co material, big to environmental hazard, radiation dose rate is relatively low, and radiated time is long, thus can not
The requirement meeting Acceleration study and single silicon chip level wafer being carried out with irradiation test, being not suitable for extensive particularly manufacturing enterprise makes
With.
And x-ray has safe ready, close rate precise control and wide ranges as radiation source, silicon chip level can be carried out
Test and can be tested on a production line, encapsulation, test, the cost of transport can be substantially reduced, improve efficiency of research and development etc.
Advantage, is particularly suitable for radiation hardened screening.
Therefore, attempt using the rdaiation response under device radiation, x-ray derive its60Under co gamma Rays, response becomes
One direction of foreign study.Derive feasible if this, safer easily not only can radiate using x-ray is this
Source carries out integral dose radiation test, and can also be according to derivation60Co test result provides space radiation assessment, thus has
Important meaning.
For soi nmosfet, existing utilization radiation, x-ray derivation device exists60Two kinds of response under co gamma Rays
Method: first method is that schwank et al. mentions the integral dose radiation causing under higher doses using x-ray in the literature
Respond and to estimate60The response that co gamma-rays cause, using than60The x-ray that co dose value exceeds 60% or 40% dose value is surveyed
Test result is estimating.But the result ratio that this method is estimated60The actual damage that co causes is serious.Further for different knots
The device ratio producing under structure, different technology conditions is different, is therefore hardly resulted in merely full according to simple proportionate relationship
The result of meaning.Another kind of method is that the electric field improving soi device oxygen buried layer under radiation, x-ray makes thus improving its electric charge yield
Under two kinds of radiation, the electric charge of oxygen buried layer accumulation is equal.This method needs the device substrate in radiation, x-ray to add biasing, but
Add how high biasing to be but difficult to determine.Therefore, it is difficult to estimate that under all bias conditions, x-ray arrives by the method60Co γ penetrates
The damage of line.
Content of the invention
The technical problem to be solved in the present invention is to provide a kind of application limitation little, and derive more accurately soi nmosfet
's60The response of co gamma Rays is derived and derivation test method.
The technical solution used in the present invention is as follows: a kind of soi nmosfet's60Co gamma Rays respond derivation method,
Method particularly includes: under extremely low electric field, to the two pieces soi nmosfet under same structure and process conditions, one carries out x and penetrates
Line, another is carried out60Co gamma Rays；Contrast x-ray with60Drawn by oxide trapped charge under the two kinds of radiation of co gamma-rays
The ratio of the threshold voltage shift rising extracts dosage enhancer def；The irradiation dose level of x-ray test data is multiplied by def,
The threshold voltage shift amount that irradiation is caused is multiplied by the factor 0.7, thus obtaining60The gamma-ray rdaiation response of co；
Described extremely low electric field is less than the electric field intensity of 0.05mv/cm for electric field.
Safe ready, close rate precise control and wide ranges are had as radiation source using x-ray, silicon chip level can be carried out
Test and can be tested on a production line, can substantially reduce encapsulation, test, transport cost, improve efficiency of research and development
Etc. advantage.X-ray replaces the test that co source carries out silicon chip level can improve efficiency of research and development, is particularly suitable for radiation hardened screening.
Under extremely low electric field (< 0.05mv/cm), the electric charge yield that x-ray leads to and60Co gamma-rays reach unanimity.This is
Because under extremely low electric field, oxide layer is insensitive to radiating, Most electronic-hole that radiation produces is to all again multiple in the original location
Close, the hole escaped is little.Should under the conditions of x-ray and60The electric charge yield that co gamma Rays lead to is equal, then now cause
The different sole cause of device oxide trapped charge amount is exactly Dose Enhancement Effects, thus by oxygen under being radiated using two kinds
The ratio changing the threshold voltage shift amount that layer trapped charge causes extracts dosage enhancer def.
Described radiation, x-ray source is the radiation, x-ray source of 10kev.
On biasing under, contrast x-ray with60The lower δ v of two kinds of radiation of co gamma-raysotVariation relation extractant with dosage
Amount enhancer def.
Oxygen buried layer is had little to no effect due to biasing added by positive grid under on biasing, thus oxygen buried layer internal electric field meets and is less than
0.05mv/cm.Therefore on biasing for, can by contrast x-ray with60Co gamma-rays δ votVariation relation with dosage
Extract dosage enhancer def.
A kind of soi nmosfet's60Co gamma Rays respond derivation test method, method particularly includes: with soi
Nmosfet device in x-ray and60Under co gamma Rays, it is respectively adopted the spoke under on biasing, pg biasing and off bias conditions
Penetrate response data as analysis foundation, by x-ray and60The threshold voltage shift total amount that co gamma-rays are done experiment carries out electric charge and divides
From obtaining the contribution margin δ v to threshold voltage shift for the oxide-trapped chargeotWith the contribution margin to threshold voltage shift for the interfacial state
δvit, and then obtain δ votVariation relation with total radiation dose；Under on bias conditions, by two kinds of rays (x-ray and60Co gamma-rays) the lower δ v of radiationotVariation relation with total radiation dose extracts dosage enhancer def；X-ray is tested number
According to irradiation dose level be multiplied by def, the threshold voltage shift amount that irradiation is caused is multiplied by the factor 0.7, thus obtaining60Co γ penetrates
The rdaiation response of line；With the experimental data under pg biasing and off biasing as foundation, the dosage extracting under checking on bias condition increases
The reasonability of the strong factor, and derivation is responded by radiation, x-ray60The whole derivation method accuracy of co gamma Rays response；
Described extremely low electric field is less than the electric field intensity of 0.05mv/cm for electric field.
Oxide-trapped charge is the direct result escaping the hole oxidized layer trap capture being initially combined, and carries out electric charge
It becomes possible to the interference of exclusion interfacial state after separating, determine the contribution to threshold voltage shift for the oxide charge.
Described radiation, x-ray source is the radiation, x-ray source of 10kev.
On biasing under, contrast x-ray with60The lower δ v of two kinds of radiation of co gamma-raysotVariation relation extractant with dosage
Amount enhancer def.
Compared with prior art, the invention has the beneficial effects as follows: application limitation is little, δ vthIt is more accurate to derive；Can save
Go60The substantial amounts of radiation test of co source, thus substantially reducing experimentation cost and playing x-ray and can conveniently and efficiently provide the excellent of feedback
Gesture, improves the efficiency of research and development.Although still needing to carry out once60Co tests, as long as but device architecture and process conditions are constant, here
Afterwards60Co test just can be utilized the method to pass through x-ray experimental data direct derivation.The method is implemented simply, and by real
Test data verification and can reach very high precision.The proposition of test method substitutes for x-ray60Co gamma-rays carry out integral dose radiation examination
Test to provide and provide powerful support for, there is realistic meaning.
Brief description
Fig. 1 is under on biasing60Under co gamma-ray irradiation, oxide charge and interfacial state are to soi nmosfet backgate threshold value electricity
The contribution margin schematic diagram of pressure drift.
Fig. 2 is the δ v of two kinds of radiation under on bias conditionotRelation schematic diagram and Equilibrium dose between.
Fig. 3 is in the specific embodiment of the invention, the δ v that the x-ray verified under pg biasing is derivedotChange with accumulated dose
Change relation with60The comparison of co gamma-rays curve.
Fig. 4 is in the specific embodiment of the invention, the δ v that the x-ray verified under off biasing is derivedotWith accumulated dose
Variation relation with60The comparison of co gamma-rays curve.
Specific embodiment
In order that the objects, technical solutions and advantages of the present invention become more apparent, below in conjunction with drawings and Examples, right
The present invention is further elaborated.It should be appreciated that specific embodiment described herein is only in order to explain the present invention, not
For limiting the present invention.
Any feature disclosed in this specification (including summary and accompanying drawing), unless specifically stated otherwise, all can be equivalent by other
Or the alternative features with similar purpose are replaced.I.e., unless specifically stated otherwise, each feature is a series of equivalent or class
Like one of feature example.
Specific embodiment 1
A kind of soi nmosfet's60Co gamma Rays respond derivation method, method particularly includes: under extremely low electric field, right
Two pieces soi nmosfet under same structure and process conditions, one carries out x-ray, and another is carried out60Co gamma Rays；
Contrast x-ray with60The ratio of the threshold voltage shift being caused by oxide trapped charge under the two kinds of radiation of co gamma-rays extracts dosage
Enhancer def；The irradiation dose level of x-ray test data is multiplied by def, the threshold voltage shift amount that irradiation is caused is taken advantage of
With the factor 0.7, thus obtaining60The gamma-ray rdaiation response of co；
Described extremely low electric field is less than the electric field intensity of 0.05mv/cm for electric field.
Specific embodiment 2
On the basis of specific embodiment 1, described radiation, x-ray source is the radiation, x-ray source of 10kev.
Specific embodiment 3
On the basis of specific embodiment 1 or 2, on biasing under, contrast x-ray with60The lower δ of two kinds of radiation of co gamma-rays
votVariation relation with dosage extracts dosage enhancer def.
Oxygen buried layer is had little to no effect due to biasing added by positive grid under on biasing, thus oxygen buried layer internal electric field meets and is less than
0.05mv/cm.Therefore on biasing for, can by contrast x-ray with60Co gamma-rays δ votVariation relation with dosage
Extract dosage enhancer def.
Specific embodiment 4
A kind of soi nmosfet's60Co gamma Rays respond derivation test method, method particularly includes: with soi
Nmosfet device in x-ray and60Under co gamma Rays, it is respectively adopted the spoke under on biasing, pg biasing and off bias conditions
Penetrate response data as analysis foundation, by x-ray and60The threshold voltage shift total amount that co gamma-rays are done experiment carries out electric charge and divides
From obtaining the contribution margin δ v to threshold voltage shift for the oxide-trapped chargeotWith the contribution margin to threshold voltage shift for the interfacial state
δvit, and then obtain δ votVariation relation with total radiation dose；Under on bias conditions, by two kinds of rays (x-ray and60Co gamma-rays) the lower δ v of radiationotVariation relation with total radiation dose extracts dosage enhancer def；X-ray is tested number
According to irradiation dose level be multiplied by def, the threshold voltage shift amount that irradiation is caused is multiplied by the factor 0.7, thus obtaining60Co γ penetrates
The rdaiation response of line；With the experimental data under pg biasing and off biasing as foundation, the dosage extracting under checking on bias condition increases
The reasonability of the strong factor, and derivation is responded by radiation, x-ray60The whole derivation method accuracy of co gamma Rays response；
Described extremely low electric field is less than the electric field intensity of 0.05mv/cm for electric field.
Specific embodiment 5
On the basis of specific embodiment 4, described radiation, x-ray source is the radiation, x-ray source of 10kev.
Specific embodiment 6
On the basis of specific embodiment 4 or 5, on biasing under, contrast x-ray with60The lower δ of two kinds of radiation of co gamma-rays
votVariation relation with dosage extracts dosage enhancer def.
Specific embodiment 7
On the basis of one of specific embodiment 4 to 6, implement the content of specific embodiment 1.
First separation of charge is carried out to the buries oxide layer total electrical charge causing soi nmosfet backgate threshold voltage shift.Root
Understand according to cmos/soi device Study on Irradiation Effects, after accumulated dose ionizing radiation, in buries oxide layer, radiate the oxidation inducted
Thing trapped charge and heterointerface state charge all can cause transistor backgate threshold voltage shift.For nmosfet, oxide trap electricity
The accumulation of lotus can make threshold voltage reduce, and the effect of interfacial state is contrary with the effect of oxide charge, is so that threshold voltage is increased.
Oxide-trapped charge is the direct result escaping the hole oxidized layer trap capture being initially combined, after carrying out separation of charge,
The interference of interfacial state just can be excluded, determine the contribution to threshold voltage shift for the oxide charge.Separate mos transistor after irradiation
Oxide-trapped charge and heterointerface state charge most common method be the Asia that winokur and mcwhorter et al. grows up
Threshold i-v technology.With under on bias condition60Under co gamma-ray irradiation, the result of soi nmosfet separation of charge is as shown in Figure 1.Fig. 1
Middle x-axis is irradiation dose level, and y-axis is the drift value of threshold voltage, δ vthFor the total amount of threshold voltage shift, δ votFor oxygen
The contribution margin to threshold voltage shift for the compound trapped charge, δ vitFor the contribution margin to threshold voltage shift for the interfacial state.
By x-ray and60Co gamma-rays understand, two kinds radiation-induced to the Analysis on Mechanism of soi device ionization radiation effect
The difference of oxide layer stored charge amount can be attributed to electric charge yield (ratio being initially combined is escaped in hole) and Dose Enhancement Effects
Caused.Due to Dose Enhancement Effects, the absorbed dose of radiation, x-ray rear oxidation layer are higher, thus producing more electron-holes
Right, but under certain current field condition, the electron-hole pair of generation is escaped the ratio being initially combined and is but less than60Co gamma-rays.
Dose enhancement factors and initial complex effect for x-ray and60The total dose damage that co gamma-rays cause acts as in the opposite direction
With Dose enhancement factors make the rdaiation response of x-ray more severe, and initial complex effect makes60The shadow of co gamma Rays response
Sound is more serious.Actually any in two kinds of effects more get the upper hand, for manufacturing process different, structure is different, radiation condition is different
Etc. different situations, its result also differs.It is thus desirable to weighing the impact that both effects produce to device rdaiation response respectively,
And then the rdaiation response being caused by x-ray derives60The gamma-ray rdaiation response of co.
Under extremely low electric field, contrast x-ray with60The threshold value being caused by oxide trapped charge under the two kinds of radiation of co gamma-rays
The ratio of voltage drift extracts dosage enhancer def；The irradiation dose level of x-ray test data is multiplied by def, irradiation is made
The threshold voltage shift amount becoming is multiplied by the factor 0.7, obtains60The gamma-ray rdaiation response of co.
Under extremely low electric field (< 0.05mv/cm), the electric charge yield that x-ray leads to and60Co gamma-rays reach unanimity.This is
Because under extremely low electric field, oxide layer is insensitive to radiating, Most electronic-hole that radiation produces is to all again multiple in the original location
Close, the hole escaped is little.Should under the conditions of x-ray and60The electric charge yield that co gamma Rays lead to is equal, then now cause
The different sole cause of device oxide trapped charge amount is exactly Dose Enhancement Effects, thus by oxygen under being radiated using two kinds
The ratio changing the threshold voltage shift amount that layer trapped charge causes extracts dosage enhancer def.
On biasing under, contrast x-ray with60The lower δ v of two kinds of radiation of co gamma-raysotVariation relation extractant with dosage
Amount enhancer def.
Oxygen buried layer is had little to no effect due to biasing added by positive grid under on biasing, thus oxygen buried layer internal electric field meets and is less than
0.05mv/cm.Therefore on biasing for, can by contrast x-ray with60Co gamma-rays δ votVariation relation with dosage
Extract dosage enhancer def.
As shown in Fig. 2 under on bias condition x-ray with60The two kinds of radiation of co gamma-rays are caused by oxygen buried layer trapped charge
The δ v of backgate threshold voltage shiftotThe example of the relation and Equilibrium dose between.The def=1.60 obtaining in exemplary plot.
It is it should be noted that Dose Enhancement Effects are a kind of interfacial effects, only relevant with oxidated layer thickness, device architecture,
Unrelated with oxide layer internal electric field；And initially complex effect is relevant with electric field, but unrelated with oxidated layer thickness, device architecture.Thus
For same device, under 10kev radiation, x-ray, its dose enhancement is constant.
According under on bias condition, extract def=1.60 (x-ray/60Co gamma-rays), it is possible to use the examination of x-ray
Test data to be derived under other various bias conditions60The gamma-ray rdaiation response of co.Def is multiplied by Equilibrium dose level permissible
Obtain actual absorption dosage level.Under other bias conditions based on experience value and data, x-ray irradiates lower electric charge product
Volume is about60Under the irradiation of co gamma-rays 70%.Thus the abscissa (irradiation dose level) of x-ray test data is multiplied by def,
Again the threshold voltage shift amount (vertical coordinate) that irradiation causes is multiplied by the factor 0.7, you can obtain60The gamma-ray rdaiation response of co.
Taking the experimental data under pg biasing as a example.According to Dose enhancement factors factor def=1.60, then x-ray is in Equilibrium dose
Level is respectively actual absorption dosage difference when 55.56krad (sio2), 0.28mrad (sio2) and 0.56mrad (sio2)
For 88.9krad (sio2), 0.45mrad (sio2) and 0.9mrad (sio2).Under pg biasing, oxygen buried layer internal electric field higher (>
0.3mv/cm), the lower electric charge yield obvious difference of now two kinds of radiation, the electric charge yield taking x-ray is60The 70% of co.Examine respectively
After considering the impact of two kinds of effects, the δ v that x-ray is derived by weotVariation relation and reality with accumulated dose60Co gamma-rays are bent
Line is contrasted, as shown in Figure 3.In the same way, derived using the experimental data under off biasing, result such as Fig. 4
Shown.Can with the contrast of 60co actual curve by the curve that the x-ray experimental data under different bias conditions is derived twice
See, the result of derivation can be coincide well with actual value, thus demonstrate the Dose enhancement factors factor extracted under on bias condition being
Reasonably, responded by radiation, x-ray and derive60The whole derivation method precision of co gamma Rays response is higher.
Claims (6)
1. a kind of soi nmosfet60Co gamma Rays respond derivation method, method particularly includes: under extremely low electric field, to same
Two pieces soi nmosfet under spline structure and process conditions, one carries out x-ray, and another is carried out60Co gamma Rays；Right
Than x-ray with60The ratio of the threshold voltage shift being caused by oxide trapped charge under the two kinds of radiation of co gamma-rays extracts dosage and increases
Strong factor def；The irradiation dose level of x-ray test data is multiplied by def, the threshold voltage shift amount that irradiation is caused is multiplied by
The factor 0.7, thus obtain60The gamma-ray rdaiation response of co；
Described extremely low electric field is less than the electric field intensity of 0.05mv/cm for electric field.
2. rdaiation response derivation method according to claim 1, radiation, x-ray source is the radiation, x-ray source of 10kev.
3. rdaiation response derivation method according to claim 1 and 2, on biasing under, contrast x-ray with60Co gamma-rays
δ v under two kinds of radiationotVariation relation with dosage extracts dosage enhancer def.
4. a kind of soi nmosfet60Co gamma Rays respond derivation test method, method particularly includes: with soi nmosfet
Device in x-ray and60Under co gamma Rays, it is respectively adopted the rdaiation response number under on biasing, pg biasing and off bias conditions
According to as analysis foundation, by x-ray and60The threshold voltage shift total amount that co gamma-rays are done experiment carries out separation of charge, obtains
The contribution margin δ v to threshold voltage shift for the oxide-trapped chargeotWith the contribution margin δ v to threshold voltage shift for the interfacial stateit,
And then obtain δ votVariation relation with total radiation dose；Under on bias conditions, by two kinds of rays (x-ray and60coγ
Ray) the lower δ v of radiationotVariation relation with total radiation dose extracts dosage enhancer def；Spoke by x-ray test data
It is multiplied by def according to dosage level, the threshold voltage shift amount that irradiation is caused is multiplied by the factor 0.7, thus obtaining60The gamma-ray spoke of co
Penetrate response；With the experimental data under pg biasing and off biasing as foundation, the Dose enhancement factors factor of extraction under checking on bias condition
Reasonability, and by radiation, x-ray respond derive60The whole derivation method accuracy of co gamma Rays response；
Described extremely low electric field is less than the electric field intensity of 0.05mv/cm for electric field.
5. rdaiation response according to claim 4 is derived and derivation test method, and described radiation, x-ray source is the x of 10kev
Ray radiation source.
6. the rdaiation response according to claim 4 or 5 is derived and derivation test method, under on biasing, contrasts x-ray
With60The lower δ v of two kinds of radiation of co gamma-raysotVariation relation with dosage extracts dosage enhancer def.
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