CN103116176A - Ground equivalent fluence calculating method for electronic component charged particle irradiation effect - Google Patents
Ground equivalent fluence calculating method for electronic component charged particle irradiation effect Download PDFInfo
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Abstract
The invention relates to a simulating test method of an electronic component and discloses a ground equivalent fluence calculating method for an electronic component charged particle irradiation effect. The ground equivalent fluence calculating method for the electronic component charged particle irradiation effect aims to solve the technical problem that a ground simulation test of the irradiation effect of the existing electronic component is large in experimental error. The ground equivalent fluence calculating method for the electronic component charged particle irradiation effect comprises the following steps: measuring the energy spectrum of orbit charged particles received by the electronic component; utilizing the method of Monte-Carlo or the program of GEANT4 to calculate the in-orbit lonization and the displacement absorbed dose D1 which pass through a protection layer and reach the surface of the electronic component; determining the thickness of a sensitive area of the electronic component; determining the types and energy of particles under the selected condition of the test, calculating the lonization and the displacement absorbed dose D2 of the sensitive area under the condition of the test through the method of Monte-Carlo or the program of GEANT4; and calculating the equivalent fluence phi and the irradiation time t under the condition of a laboratory according to D1=D2. The ground equivalent fluence calculating method for the electronic component charged particle irradiation effect is used for a simulation test of the electronic component.
Description
Technical field
The present invention relates to the simulation experiment method of electronic devices and components.
Background technology
The space high energy charged particles can cause various forms of irradiation damages to electronic devices and components.Irradiation effect (total dose effect) form mainly is divided into ionisation effect and displacement effect.Different space irradiation bomb, orbital environment and device attributes can be responsive to different irradiation effects.As, radiation belt of the earth proton and electron pair total dose effect (comprising ionisation effect and displacement effect) all can impact; MOS type device is responsive to ionisation effect, and bipolar device is responsive to displacement effect.Therefore, before carrying out ground simulation test, need to analyze for dissimilar device and irradiation effect, obtain suitable ground equivalent simulation test method or mode.
The at present research aspect the domestic equivalence of testing with the space radiation environment equivalent simulation on ground for electronic devices and components seldom.The ground equivalent method that relates to lens in " K208 glass-based coated lens proton-electron irradiation effect and mechanism research " (Harbin Institute of Technology's Master's thesis in 2007) literary composition of Liu Mindong, but the irradiation effect performance degradation of lens own and electron device difference are larger, the large and complex steps of the method error, and this method can not be distinguished ionization and displacement effect method, and is inapplicable to electron device.The article of Zhang Qingxiang etc. " Displacement damage dose modal and application thereof ", (space science journal, 2005,25 (2), mentioned CCD camera displacement damage equivalent method 132-137), the method is not considered the structure of device only for displacement effect, especially the vertical structure size of device.When little or device vertical structure size is larger when the ground simulation source energy of selecting, can not guarantee that NIEL is constant, this just and the space situation can difference large especially, application the method can be brought king-sized error.And the method also is not suitable for all electronic devices and components (MOS type and ambipolar).From above-mentioned document analysis, the domestic public data of electronic devices and components space radiation environment total dose damage effect ground equivalent method not being studied is described.
Carry out a large amount of mechanism research work for the electronic devices and components irradiation effect abroad, studied irradiation bomb kind (proton, electronics, neutron, Co-60 source etc.), flux to the impact of electron device electrical property deterioration law.But, for Space Radiation Effects (ionisation effect and displacement effect) ground simulation test equivalent method (computing method) research less (seeing document [4]-[12]).For ionisation effect, ground simulation test adopts the Co-60 source mostly in the world, and equivalent method is only simple absorbed dose equivalence, does not consider the situation of device sensitizing range; Do not see the research of equivalent method aspect when using the damage of charged particle research ionisation effect, especially to the charged particle of low energy.For displacement effect, some equivalent method researchs are arranged mainly for solar cell and some bipolar devices, the method is mainly used NIEL corresponding to incident particle zero energy and is calculated, and do not consider that NIEL is with the variation of the device chip degree of depth, for the ground experiment equivalence, especially low energy irradiation bomb in ground brings very large error like this.
In sum, all exist problem and shortcoming for electronic devices and components ionisation effect and displacement effect ground simulation test equivalent method in the world at present.
Summary of the invention
The present invention will solve the large technical matters of existing electronic devices and components irradiation effect ground simulation test error, and electronic devices and components charged particle irradiation effect ground equivalence fluence computing method are provided.
Electronic devices and components charged particle irradiation effect of the present invention ground equivalence fluence computing method are carried out according to the following steps:
One, press military service track and the military service period of electronic devices and components, calculate the suffered orbit of charged particle power spectrum of electronic devices and components;
Two, the orbit of charged particle power spectrum that obtains according to step 1, utilize Monte-Carlo method or GEANT4 program to calculate to arrive after protective layer the electronic devices and components surfaces at rail ionization and displacement absorbed dose D1, the unit of absorbed dose is rad;
Three, determine sensitizing range thickness, the sensitizing range is the grid oxygen district of MOS (MIS) Si body device, passivation layer and the pn knot of bipolar device;
Four, the sensitizing range thickness that obtains according to step 4 is determined particle kind and energy under selected test condition, calculates ionization or the displacement absorbed dose D2 of sensitizing range under test condition by Monte-Carlo method or GEANT4 program;
Five, press D1=D2, the equivalent fluence Φ under the computing laboratory condition and exposure time t.
The thickness of the grid oxygen district of MOS in above-mentioned steps three (MIS) Si body device, the passivation layer of bipolar device and pn knot is all characteristics of device itself, and the thickness of the sensitizing range of concrete device is definite value;
The principle of electronic devices and components Space Radiation Effects ground equivalent test analogy method is the absorbed dose equivalence, and namely irradiation absorbed dose in ground equates at the rail absorbed dose with device.Ground irradiation absorbed dose refers to the absorbed dose that irradiation bomb causes the electronic devices and components sensitizing ranges.Dissimilarly can impact the different structural region of electronic devices and components with the irradiation bomb of energy, only have when the sensitizing range of electronic devices and components absorbed dose with when the rail absorbed dose is identical, be only equivalence truly.
Dissimilar device is different to the sensitivity of ionisation effect, displacement effect, and the sensitizing range of device architecture is also different.As mainly responsive to ionisation effect in MOS (MIS) Si body device, what play a major role is grid oxygen (gate insulator), so its position, sensitizing range is grid oxygen place.In irradiation process, incident particle can produce electron-hole pair in grid oxygen (gate insulator), cause thus grid oxygen trap-charge and interface state, causes the electrical property drift of device.Except grid oxygen, passivation layer and substrate all can affect to the performance of electronic devices and components, but to compare impact less with grid oxygen.Therefore, concerning this class device, MOS (MIS) Si body device its sensitizing range is mainly grid oxygen part, need absorbed dose that incident particle is caused grid oxygen with in the equivalence of rail absorbed dose.The unit for electrical property parameters of bipolar device is different to the sensitivity of ionization, displacement effect.Its sensitizing range also is different from MOS type device, and the sensitizing range of bipolar device is mainly pn knot, therefore when carrying out ground simulation test, need with the absorbed dose in pn interface with in the equivalence of rail absorbed dose.
Space radiation environment can cause the electronic devices and components total dose effect damage of being on active service at rail, comprise ionisation effect damage and displacement effect damage, the present invention is with electronic devices and components Space Radiation Effects ground equivalent test analogy method---sensitizing range absorbed dose method of equal effects, be used for solving ionization and displacement effect equivalent problems under ground simulation test and space radiation condition, make calculating more realistic.Based on cutting and calculating, type of device and the construction analysis to space radiation environment, by Monte Carlo computational analysis method or GEANT4 program, obtain irradiation bomb ground simulation test equivalence fluence or the dosage of variety classes (electronics, proton, heavy ion etc.) and energy at last.
Method of the present invention is used for the simulation test of electronic devices and components.
Description of drawings
Fig. 1 is MOS type device vertical structure schematic diagram in test one; In Fig. 1,1 is the first passivation layer of MOS type device, and 2 is the second passivation layer of MOS type device, and 3 is the phosphorosilicate glass layer of MOS type device, and 4 is the aluminium electrode of MOS type device, and grid oxygen is in below the aluminium electrode;
Fig. 2 is that the displacement absorbed dose that calculates for the GEO track is with Al overcoat thickness variation relation; Wherein
Relation curve for the thickness of the ionization absorbed dose of radiation belt electronics and protective layer aluminium;
Relation curve for the thickness of the ionization absorbed dose of radiation belt proton and protective layer aluminium;
Relation curve for the thickness of the ionization absorbed dose of solar cosmic ray proton and protective layer aluminium;
Relation curve for the thickness of the ionization absorbed dose of galactic comic ray and secondary photon and protective layer aluminium;
Relation curve for the thickness of total absorbed dose and protective layer aluminium;
Fig. 3 is the ground proton source of selecting different-energy, and the absorbed dose that calculates for the MOS device is with the variation relation curve of the device chip degree of depth; Wherein
Be the ionization absorbed dose of the 10MeV proton relation curve with the device chip degree of depth;
Be the ionization absorbed dose of the 5MeV proton relation curve with the device chip degree of depth;
Be the ionization absorbed dose of the 2MeV proton relation curve with the device chip degree of depth;
Be the ionization absorbed dose of the 170keV proton relation curve with the device chip degree of depth;
Embodiment
Embodiment one: the electronic devices and components charged particle irradiation effect ground equivalence fluence computing method of present embodiment are carried out according to the following steps:
One, press military service track and the military service period of electronic devices and components, calculate the suffered orbit of charged particle power spectrum of electronic devices and components, the orbit of charged particle power spectrum comprises radiation belt of the earth proton power spectrum, radiation belt of the earth electronic energy spectrum, solar cosmic ray proton power spectrum and galactic comic ray proton power spectrum;
Two, the orbit of charged particle power spectrum that obtains according to step 1, utilize Monte-Carlo method or GEANT4 program to calculate to arrive after protective layer the electronic devices and components surfaces at rail ionization and displacement absorbed dose D1, the unit of absorbed dose is rad;
Three, determine sensitizing range thickness, the sensitizing range is the grid oxygen district of MOS (MIS) Si body device, passivation layer and the pn knot of bipolar device;
Four, the sensitizing range thickness that obtains according to step 4 is determined particle kind and energy under selected test condition, calculates ionization or the displacement absorbed dose D2 of sensitizing range under test condition by Monte-Carlo method or GEANT4 program;
Five, press D1=D2, the equivalent fluence Φ under the computing laboratory condition and exposure time t.
Monte-Carlo method in present embodiment is conventional technology, and the GEANT4 program is international universal program.
Space radiation environment can cause the electronic devices and components total dose effect damage of being on active service at rail, comprise ionisation effect damage and displacement effect damage, the present invention is with electronic devices and components Space Radiation Effects ground equivalent test analogy method---sensitizing range absorbed dose method of equal effects, be used for solving ionization and displacement effect equivalent problems under ground simulation test and space radiation condition, make calculating more realistic.Based on cutting and calculating, type of device and the construction analysis to space radiation environment, by Monte Carlo computational analysis method or GEANT4 program, obtain irradiation bomb ground simulation test equivalence fluence or the dosage of variety classes (electronics, proton, heavy ion etc.) and energy at last.
Embodiment two: what present embodiment was different from embodiment one is: the orbit of charged particle power spectrum is radiation belt of the earth proton power spectrum, radiation belt of the earth electronic energy spectrum, solar cosmic ray proton power spectrum or galactic comic ray proton power spectrum.Other are identical with embodiment one.
Embodiment three: what present embodiment was different from embodiment one or two is: the particle kind in step 4 is higher-energy sources of electrons, proton source, heavy ion source, neutron or Co-60 source.Other are identical with embodiment one or two.
With following verification experimental verification beneficial effect of the present invention:
Test one: the electronic devices and components charged particle irradiation effect ground equivalence fluence computing method of this test are carried out according to the following steps:
One, press military service track and the military service period of MOS type device, measure the orbit of charged particle power spectrum that electronic devices and components are accepted, the orbit of charged particle power spectrum is radiation belt of the earth proton power spectrum, radiation belt of the earth electronic energy spectrum, solar cosmic ray proton power spectrum and galactic comic ray proton power spectrum;
Two, the orbit of charged particle power spectrum that obtains according to step 1 is data source, utilize the Monte-Carlo method to calculate to arrive after protective layer the electronic devices and components surfaces at rail ionization and displacement absorbed dose D1, the unit of absorbed dose is rad;
Three, determine sensitizing range thickness, the sensitizing range is the grid oxygen district of MOS (MIS) Si body device, the passivation layer of bipolar device and the pn knot of bipolar device;
Four, the sensitizing range thickness that obtains according to step 4 is determined particle kind and energy under selected test condition, calculates by the Monte-Carlo method ionization or the displacement absorbed dose D2 that the sensitizing range should be accepted under test condition;
Five, press D1=D2, the equivalent fluence Φ under the computing laboratory condition and exposure time t.
The part-structure schematic diagram of the MOS type device in this test one step 1 as shown in Figure 1, in Fig. 1,1 is the first passivation layer of MOS type device, and 2 is the second passivation layer of MOS type device, and 3 is the phosphorosilicate glass layer of MOS type device, 4 is the aluminium electrode of MOS type device, and grid oxygen is in below the aluminium electrode;
Fig. 2 is the ionization absorbed dose result of calculation of geostationary orbit.Suppose that device is exposed under space environment, ionizing as shown in Figure 2 absorbed dose is 7.91E9rad (Si);
Relation curve for the thickness of the ionization absorbed dose of radiation belt electronics and protective layer aluminium;
Relation curve for the thickness of the ionization absorbed dose of radiation belt proton and protective layer aluminium;
Relation curve for the thickness of the ionization absorbed dose of solar cosmic ray proton and protective layer aluminium;
Relation curve for the thickness of the ionization absorbed dose of galactic comic ray and secondary photon and protective layer aluminium;
Relation curve for the thickness of total absorbed dose and protective layer aluminium;
Fig. 3 is the ground proton source of selecting different-energy, and the absorbed dose that calculates for the MOS device is with the variation relation curve of the device chip degree of depth; Wherein
Be the ionization absorbed dose of the 10MeV proton relation curve with the device chip degree of depth;
Be the ionization absorbed dose of the 5MeV proton relation curve with the device chip degree of depth;
Be the ionization absorbed dose of the 2MeV proton relation curve with the device chip degree of depth;
Be the ionization absorbed dose of the 170keV proton relation curve with the device chip degree of depth;
The longitudinal size structural representation of the described MOS type of step 1 device as shown in Figure 1.Need analyze size from chip surface to grid oxygen and gate oxide thickness for MOS type device.Show to grid oxygen from chip in this test to be of a size of 3um, the incident degree of depth of selected ground irradiation bomb should be greater than 3um.
The ground irradiation bomb should can be selected relatively harsh irradiation bomb for dissimilar radiation damage effect as far as possible near the space actual conditions, selects the proton source of different-energy to study its irradiation effect in this test.
For the MOS type device vertical structure size of Fig. 1 of this test, the ionization absorbed dose that the different-energy proton irradiation of calculating causes along the chip depth profile as shown in Figure 2.As seen, the proton of 170keV can not reach the sensitizing range, therefore not can be used as irradiation bomb and tests.
MOS type structure devices for Fig. 2, if select the 5MeV proton as irradiation bomb, the ionizing radiation absorbed dose of the ground simulation test irradiation fluence that needs for causing in the sensitizing range divided by single proton at rail ionizing radiation absorbed dose, i.e. 7.91E+9/9.46E-7=8.36E+16/cm
2(exposure fully).
Consider another situation, suppose that the Equivalent A l layer protective thickness of electron device is 1g/cm
2, the ionization absorbed dose that cause at rail this moment is 3.21E+5rad (Si), if select equally the 5MeV proton as irradiation bomb, under this condition, the ground simulation test irradiation fluence that needs is: 3.21E+5/9.46E-7=3.39E+12/cm
2(1g/cm
2The Al protective layer).This shows, under two kinds of different conditions, the ground simulation test fluence differs more than 4 magnitudes, therefore, before carrying out ground experiment, should first analysis device actual place space environment condition.
Claims (3)
1. electronic devices and components charged particle irradiation effect ground equivalence fluence computing method is characterized in that the method carries out according to the following steps:
One, press military service track and the military service period of electronic devices and components, calculate the suffered orbit of charged particle power spectrum of electronic devices and components;
Two, the orbit of charged particle power spectrum that obtains according to step 1, utilize Monte-Carlo method or GEANT4 program to calculate to arrive after protective layer the electronic devices and components surfaces at rail ionization and displacement absorbed dose D1, the unit of absorbed dose is rad;
Three, determine sensitizing range thickness, the sensitizing range is the grid oxygen district of MOS (MIS) Si body device, passivation layer and the pn knot of bipolar device;
Four, the sensitizing range thickness that obtains according to step 4 is determined particle kind and energy under selected test condition, calculates ionization or the displacement absorbed dose D2 of sensitizing range under test condition by Monte-Carlo method or GEANT4 program;
Five, press D1=D2, the equivalent fluence Φ under the computing laboratory condition or exposure time t.
2. electronic devices and components charged particle irradiation effect ground equivalence fluence computing method according to claim 1, is characterized in that the orbit of charged particle power spectrum is radiation belt of the earth proton power spectrum, radiation belt of the earth electronic energy spectrum, solar cosmic ray proton power spectrum or galactic comic ray proton power spectrum.
3. electronic devices and components charged particle irradiation effect according to claim 1 and 2 ground equivalence fluence computing method is characterized in that particle kind in step 4 is higher-energy sources of electrons, proton source, heavy ion source, neutron or Co-60 source.
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-
2013
- 2013-01-23 CN CN2013100248905A patent/CN103116176A/en active Pending
Non-Patent Citations (2)
| Title |
|---|
| 刘海 等: "光学材料带电粒子辐照效应等效模拟试验方法研究", 《航天器环境工程》 * |
| 李兴冀: "星用双极型器件带电粒子辐照效应及损伤机理", 《中国博士学位论文全文数据库信息科技辑》 * |
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