CN108345746A - The equivalent evaluation method of performance degradation caused by MOS process devices ionization damages - Google Patents

The equivalent evaluation method of performance degradation caused by MOS process devices ionization damages Download PDF

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CN108345746A
CN108345746A CN201810136611.7A CN201810136611A CN108345746A CN 108345746 A CN108345746 A CN 108345746A CN 201810136611 A CN201810136611 A CN 201810136611A CN 108345746 A CN108345746 A CN 108345746A
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radiation
ionization
absorbed dose
performance degradation
process devices
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CN108345746B (en
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李兴冀
杨剑群
刘超铭
秦兆慧
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Harbin Institute of Technology
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    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
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    • G06F—ELECTRIC DIGITAL DATA PROCESSING
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Abstract

The equivalent evaluation method of performance degradation caused by MOS process devices ionization damages, is related to the equivalent evaluation method of MOS process devices performance degradations, in order to meet the demand that the MOS process devices radiation injury for different type irradiation bomb carries out equivalent evaluation.Based on ground charged particle irradiation bomb, considers that the influence of the electric field of oxide layer is modified ionization absorbed dose of radiation, obtain correcting ionization absorbed dose of radiation, and determine performance degradation and correct the function relation curve of ionization absorbed dose of radiation；The ionization absorbed dose of radiation D under the track is calculated for certain tracks and mission requirementsTConsider that the influence of the electric field of oxide layer is modified ionization absorbed dose of radiation, obtain the amendment ionization absorbed dose of radiation under the track, the performance degradation situation corresponding to the amendment ionization absorbed dose of radiation under the track is found according to function relation curve, completes the evaluation to the performance degradation of in-orbit MOS process devices.The present invention is suitable for the performance degradation situation of equivalent evaluation MOS process devices.

Description

The equivalent evaluation method of performance degradation caused by MOS process devices ionization damages
Technical field
The present invention relates to the equivalent evaluation methods of MOS process devices performance degradations.
Background technology
In the in-orbit flight course of spacecraft, handed over the various high energy charged particles in space (electronics, proton and heavy ion) Interaction.These high energy charged particles have the performance of electronic device strong influence.Space high energy charged particles are to electronics The influence of device mainly causes the total dose effect of electronic component to damage.Ionization radiation effect will lead to electronic component Degeneration, exception or failure, or even eventually lead to satellite and catastrophic accident occur.
Multiple failure, or even failure once occurred for the satellite of the U.S. and former Soviet Union's transmitting in one's early years.China has transmitted several so far Ten satellites for various purposes shorten working life wherein failure also has occurred in some satellites, cause prodigious loss.Therefore Barrier interpretation of result shows mainly since the radiation effect that space high energy charged particles generate electronic system on spacecraft causes , failure caused by these effects accounts for the overwhelming majority of satellite failure.With the development of current science and technology, spacecraft is powered on The everyways such as price, weight, size, performance and the service life of sub- device have higher requirement.Along with carrying for these requirements Height, influence of the research space high energy charged particles radiation environment to electronic component just seem more important.
Space high energy charged particles can cause electronic component various forms of irradiation damages.Irradiation effect form is main It is divided into three kinds of ionisation effect, displacement effect and single particle effect, and flux effects in ionisation effect and low pass graded effect are also The Hot subject of current research.Different space radiation source, orbital environment and device attributes can be sensitive to different irradiation effects. Radiation belt of the earth proton mainly impacts total dose effect (including ionisation effect and displacement effect) with electronics, sun universe Line proton has larger contribution to total dose effect and single particle effect.
Ionization radiation effect, mainly charged particle (such as electronics, proton), γ, X-ray and matter interaction are half Superfluous electronics-hole pair, and a series of physical mistake caused by device inside different location thereafter are generated in conductor device Journey, such as it is compound, transport influence to device electrical performance.For MOS process devices, ionising radiation will be finally in its gate insulation layer (SiO2Layer) positive oxide-trapped charge is generated, in Si/SiO2Interface generates interface trapped charge, and device electrical characteristics is caused to be joined Number significant degradation or even disabler.Gate insulation layer is the sensitizing range of MOS process devices ionization radiation effects.
However, in real space environment, various high energy charged particles exist simultaneously, and how to be directed to different type irradiation bomb MOS process devices ionization radiation injuries carry out it is equivalent evaluation be current problem.Therefore, using a certain specific irradiation bomb, needle The equivalent evaluation study of radiation injury is carried out to MOS process devices, there is great scientific value and practical value.If can be Under the premise of the difference track radiation environment of quantitatively characterizing space, the sensitive radiation particle and damage location of MOS process devices are determined, It proposes a kind of equivalent evaluation test method of xenogenesis particle irradiation, will have to space environment effect ground equivalent simulation test great Meaning.
Invention content
The purpose of the invention is to meet be directed to different type irradiation bomb MOS process devices radiation injuries carry out it is equivalent The demand of evaluation, to provide MOS process devices ionization damages caused by performance degradation equivalent evaluation method.
The equivalent evaluation method of performance degradation caused by MOS process devices ionization damage of the present invention, including it is following Step：
Step 1: be based on ground charged particle irradiation bomb, consider the influence of the electric field of oxide layer to ionization absorbed dose of radiation into Row is corrected, and obtains correcting ionization absorbed dose of radiation, and determine performance degradation and correct the function relation curve of ionization absorbed dose of radiation；
Step 2: calculating the ionization absorbed dose of radiation D under the track for certain tracks and mission requirementsT, consider oxide layer Electric field influence to ionization absorbed dose of radiation be modified, obtain under the track amendment ionization absorbed dose of radiation, according to step 1 Function relation curve find under the track amendment ionization absorbed dose of radiation corresponding to performance degradation situation, complete to in-orbit The evaluation of the performance degradation of MOS process devices.
Preferably, step 1 specifically includes following steps：
Step 1 one, the thickness t for determining MOS process devices upper surface to gate insulation layer upper surface1, the thickness of gate insulation layer t2；
Step 1 two, Selected Particles, the particle meet following condition：
Range in MOS process devices is not less than 5 (t1+t2)；
Step 1 three carries out irradiation test based on the particle that step 1 two is selected, and the typical case of test MOS process devices is electrically It can parameter and irradiation fluence or the function relation curve of typical unit for electrical property parameters and ionization absorbed dose of radiation；
Step 1 four, the electron/hole-recombination factor alpha for calculating the particle irradiation that step 1 two is selected under current field conditioni,
Wherein, E is electric field strength, and k and the lesion capability constant that n is irradiation bomb, k is related to electric field, n and particle types and Energy is related；
Step 1 five,
When the function relation curve for being typical unit for electrical property parameters with irradiation fluence that step 1 three obtains, single grain is calculated Ionization absorbed dose of radiation D of the son in MOS process devices gate insulation layersi, then will irradiation fluence point ΦnAmendment ionization is converted to inhale Receive dose point DI, DI=αiDiΦn；
When the function relation curve for being typical unit for electrical property parameters with ionization absorbed dose of radiation that step 1 three obtains, will ionize Absorbed dose of radiation point DnBe converted to amendment ionization absorbed dose of radiation point DI, DI=αiDn；
It converts the function relation curve that step 1 three obtains to typical unit for electrical property parameters again and corrects ionization absorbed dose of radiation Function relation curve, which is performance degradation and correct the function relation curve of ionization absorbed dose of radiation.
Preferably, further comprising the steps of：
Particle is replaced, and repeats step 1 two to step 1 five, obtains typical unit for electrical property parameters and the amendment of a variety of particles Ionize the function relation curve of absorbed dose of radiation；
Obtained a plurality of function relation curve is fitted, is ionized the curve after fitting as performance degradation and amendment The function relation curve of absorbed dose of radiation.
Preferably, consider that the influence of the electric field of oxide layer is modified ionization absorbed dose of radiation in step 2, be somebody's turn to do Amendment under track ionizes absorbed dose of radiation, specially：
Electron/hole-recombination factor alpha when calculating in-orbitT,
kjiAnd njiFor jth type, the lesion capability constant of the particle of i-th kind of energy, kjiIt is related to electric field, njiWith grain Subtype is related to energy, and l is the number of types of particle, and m is the energy species number of particle；
Amendment under the track ionizes absorbed dose of radiation D：D=αT·DT。
Preferably, the particle is electronics, proton, heavy ion, photon, meson or neutron.
The present invention is directed to particle irradiation of the MOS process devices based on a certain particular energy, establishes performance degradation physics sum number Learn model, come realize predict other different type particle irradiations under the conditions of MOS process devices performance degradation feature, reach saving Test period reduces experimentation cost and predicts the purpose that on-orbit performance is degenerated.
Description of the drawings
Fig. 1 is the structural schematic diagram of MOS process devices；
Fig. 2 is variation relation figure of the MOS technique transistor threshold voltage varieties with ionization absorbed dose of radiation；
Fig. 3 is variation relation figure of the electron/hole-recombination coefficient with electric field strength；
Fig. 4 is MOS technique transistor threshold voltage varieties with the variation relation figure for correcting ionization absorbed dose of radiation.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on Embodiment in the present invention, those of ordinary skill in the art obtained under the premise of not making creative work it is all its His embodiment, shall fall within the protection scope of the present invention.
It should be noted that in the absence of conflict, the feature in embodiment and embodiment in the present invention can phase Mutually combination.
The invention will be further described in the following with reference to the drawings and specific embodiments, but not as limiting to the invention.
Present embodiment establishes Performance Degradation Model based on a kind of irradiation bomb, carrys out equivalent simulation other irradiation bomb radiation injuries Ground equivalent simulation experiment method, application includes MOS techniques discrete device and circuit.In analysis device radiation injury On the basis of sensitive part, only by selecting the charged particle of a certain particular energy and type, in suitable fluence condition Lower carry out irradiation test, so that it may establish MOS process devices Performance Degradation Models；It is calculated in conjunction with Monte Carlo methods and analyzes it The lesion capability of his type irradiation bomb, you can the radiation injury of different type irradiation bomb is normalized, saving experiment is reached Time reduces experimentation cost and predicts the purpose that on-orbit performance is degenerated.The structure of MOS process devices is as shown in Figure 1, wherein ionize Effect sensitizing range is the gate insulation layer (SiO above silicon materials2Layer).Carrying out the damage normalization of different type charged particle radiation When, the region need to be directed to and carried out, 1 is passivation layer (PECVD), material SiO2, thickness 300nm, 2 be passivation layer, and material is Si3N4, thickness 200nm, 3 be phosphorosilicate glass, and thickness 660nm, 4 be Al, and thickness 1.15um, 5 be gate insulation layer, thickness For 50nm.
Charged particle irradiation can generate electronics-hole pair in the gate insulation layer of MOS process devices.These electronics and sky Cave mobility under the normal temperature condition of room is strong, and compound action will largely occur.Compound electrons do not occur can most end form At stable defect.These defects stablized can cause the transportation state of carrier in the semiconductors to change, to MOS works The life and reliability of skill discrete device and circuit will produce strong influence.Different type charged particle irradiates, in unit The stabilization defects count of interior formation and state difference, cause differing greatly for device performance degeneration.
Present embodiment is directed to MOS techniques discrete device and circuit, the charged particle based on a kind of particular energy and type Irradiation, to normalize the degree of injury of other particle irradiations, and predicts MOS techniques discrete device and the in-orbit ionization damage of circuit Energy deterioration law, step is simple, easily operated.The expense of experiment can be greatly lowered in the technological approaches that present embodiment is proposed With, and improve the safety of test operator and shorten test period, to MOS techniques discrete device and circuit space ring Border effect ground simulation test and research are of great significance.In space environment effect research and radiation hardened technology application In, there is apparent advantage and is widely applied foreground.
The equivalent evaluation method of performance degradation, includes the following steps caused by MOS process devices ionization damages：
Step 1: be based on ground charged particle irradiation bomb, consider the influence of the electric field of oxide layer to ionization absorbed dose of radiation into Row is corrected, and obtains correcting ionization absorbed dose of radiation, and determine performance degradation and correct the function relation curve of ionization absorbed dose of radiation；
Step 1 specifically includes following steps：
Step 1 one, the thickness t for determining MOS process devices upper surface to gate insulation layer upper surface1, the thickness of gate insulation layer t2；
Step 1 two, the irradiation particle that is calculated based on Monte Carlo methods and select a certain energy, which meets Following condition：
Range in MOS process devices is not less than 5 (t1+t2)；
Step 1 three carries out irradiation test, the typical case of in-situ test MOS process devices based on the particle that step 1 two is selected Unit for electrical property parameters and irradiation fluence or the function relation curve of typical unit for electrical property parameters and ionization absorbed dose of radiation；
106/cm2~1016/cm2Irradiation fluence section or the ionization absorbed dose of radiation section of 5krad~1Mrad at least select Select 6 irradiation fluence point (Φn) or ionization absorbed dose of radiation point (Dn)；
Step 1 four, oxidation consider the influence of the electric field of layer, calculate the particle spoke that step 1 two is selected under current field condition According to electron/hole-recombination factor alphai,
Wherein, E is electric field strength, and k and the lesion capability constant that n is irradiation bomb, k is related to electric field, n and particle types and Energy is related；K is between 0.01~200, and n is between 0.01~10.
Step 1 five,
When the function relation curve for being typical unit for electrical property parameters with irradiation fluence that step 1 three obtains, single grain is calculated Ionization absorbed dose of radiation D of the son in MOS process devices gate insulation layersi, then will irradiation fluence point ΦnAmendment ionization is converted to inhale Receive dose point DI, DI=αiDiΦn；
When the function relation curve for being typical unit for electrical property parameters with ionization absorbed dose of radiation that step 1 three obtains, will ionize Absorbed dose of radiation point DnBe converted to amendment ionization absorbed dose of radiation point DI, DI=αiDn；
It converts the function relation curve that step 1 three obtains to typical unit for electrical property parameters again and corrects ionization absorbed dose of radiation Function relation curve, which is performance degradation and correct the function relation curve of ionization absorbed dose of radiation.
Step 2: being based on for certain tracks (GEO, LEO and MEO etc.) and mission requirements (spacecraft in-orbit projected life) Monte Carlo methods calculate the ionization absorbed dose of radiation D under the trackTAnd electron/hole-recombination factor alpha when in-orbitT,
kjiAnd njiFor jth type, the lesion capability constant of the particle of i-th kind of energy, kjiIt is related to electric field, njiWith grain Subtype is related to energy, and l is the number of types of particle, and m is the energy species number of particle；
Correcting ionization absorbed dose of radiation D is：D=αT·DT。
The performance found corresponding to the amendment ionization absorbed dose of radiation under the track according to the function relation curve of step 1 is moved back Change situation, completes the evaluation to the performance degradation of in-orbit MOS process devices.
In order to further illustrate the universality of present embodiment, 60MeV Br ions, 8MeV protons (P) and 1MeV electricity are selected Sub (E) is irradiation bomb, is conducted a research under different fluences, and fluence is respectively 7.12E7/(cm2s)、5.0E10 A/(cm2S), 1.88E12/(cm2s).When different-energy and the charged particle of type irradiate, in situ detection MOS artworks For body pipe threshold voltage variety with the variation relation of ionization absorbed dose of radiation, irradiation temperature is room temperature.Fig. 2 be 60MeV Br ions, The irradiation of 8MeV protons and 1MeV electronics, MOS technique transistor threshold voltage varieties are with the variation relation for ionizing absorbed dose of radiation. As can be seen from Figure, the degree of injury of different types of charged particle irradiation MOS technique transistors is different.Wherein, identical Under the conditions of irradiating fluence, 1MeV electron irradiation damages are maximum.Fig. 3 is what 60MeVBr ions, 8MeV protons and 1MeV electronics generated Electron/hole-recombination coefficient with electric field strength variation relation.As seen from the figure, in irradiation process, MOS technique transistors Ground, electric field strength is 0.5MV/cm at this time, and the k-factor corresponding to 1MeV electron irradiations is 5, n 0.7；8MeV proton irradiations institute Corresponding k-factor is 10.7, n 1.3；K-factor corresponding to 60MeV Br ion irradiations is 56.8, n 1.9.More than being based on Parameter, can calculate the electron hole pair recombination coefficient that 60MeVBr ions, 8MeV protons and 1MeV electronics generate is respectively 0.0004491,0.04087 and 0.2853.Using the recombination coefficient, the ionization absorbed dose of radiation in Fig. 2 can be converted to modified Absorbed dose of radiation is ionized, as shown in Figure 4.As seen from the figure, the radiation injury of different type charged particle can be carried out normalizing by this method Change, the on-orbit performance of convenient directly prediction MOS technique transistors is degenerated.For GEO tracks, when the task phase is 10 years, ionization is repaiied Positive absorbed dose of radiation is 30krad.By Fig. 4 can Accurate Prediction go out the on-orbit performance degradation ratios of MOS technique transistors.

Claims (5)

  1. The equivalent evaluation method of performance degradation caused by 1.MOS process devices ionization damages, which is characterized in that including following step Suddenly：
    Step 1: being based on ground charged particle irradiation bomb, consider that ionization absorbed dose of radiation is repaiied in the influence of the electric field of oxide layer Just, it obtains correcting ionization absorbed dose of radiation, and determines performance degradation and correct the function relation curve of ionization absorbed dose of radiation；
    Step 2: calculating the ionization absorbed dose of radiation D under the track for certain tracks and mission requirementsT, consider the electric field of oxide layer Influence to ionization absorbed dose of radiation be modified, obtain under the track amendment ionization absorbed dose of radiation, according to the function of step 1 Relation curve finds the performance degradation situation corresponding to the amendment ionization absorbed dose of radiation under the track, completes to in-orbit MOS techniques The evaluation of the performance degradation of device.
  2. 2. the equivalent evaluation method of performance degradation caused by MOS process devices ionization damage according to claim 1, special Sign is that step 1 specifically includes following steps：
    Step 1 one, the thickness t for determining MOS process devices upper surface to gate insulation layer upper surface1, the thickness t of gate insulation layer2；
    Step 1 two, Selected Particles, the particle meet following condition：
    Range in MOS process devices is not less than 5 (t1+t2)；
    Step 1 three carries out irradiation test, the typical electrical property ginseng of test MOS process devices based on the particle that step 1 two is selected Number and irradiation fluence or the function relation curve of typical unit for electrical property parameters and ionization absorbed dose of radiation；
    Step 1 four, the electron/hole-recombination factor alpha for calculating the particle irradiation that step 1 two is selected under current field conditioni,
    Wherein, E is electric field strength, k and the lesion capability constant that n is irradiation bomb, and k is related to electric field, n and particle types and energy It is related；
    Step 1 five,
    When the function relation curve for being typical unit for electrical property parameters with irradiation fluence that step 1 three obtains, calculates single particle and exist Then irradiation fluence point Φ n are converted to amendment ionization absorbent by the ionization absorbed dose of radiation Di in MOS process devices gate insulation layers Measure point DI, DI=αiDiΦn；
    When the function relation curve for being typical unit for electrical property parameters with ionization absorbed dose of radiation that step 1 three obtains, ionization is absorbed Dose point DnBe converted to amendment ionization absorbed dose of radiation point DI, DI=αiDn；
    It converts the function relation curve that step 1 three obtains to typical unit for electrical property parameters again and corrects the letter of ionization absorbed dose of radiation Number relation curve, the curve are the function relation curve of performance degradation and amendment ionization absorbed dose of radiation.
  3. 3. the equivalent evaluation method of performance degradation caused by MOS process devices ionization damage according to claim 2, special Sign is, further comprising the steps of：
    Particle is replaced, and repeats step 1 two to step 1 five, the typical unit for electrical property parameters and amendment that obtain a variety of particles ionize The function relation curve of absorbed dose of radiation；
    Obtained a plurality of function relation curve is fitted, is absorbed using the curve after fitting as performance degradation with ionization is corrected The function relation curve of dosage.
  4. 4. the equivalent evaluation method of performance degradation caused by MOS process devices ionization damage according to claim 1, special Sign is, considers that the influence of the electric field of oxide layer is modified ionization absorbed dose of radiation in step 2, obtains repairing under the track Positive ionization absorbed dose of radiation, specially：
    Electron/hole-recombination factor alpha when calculating in-orbitT,
    E is electric field strength, kjiAnd njiFor jth type, the lesion capability constant of the particle of i-th kind of energy, kjiWith electric field phase It closes, njiRelated to particle types and energy, l is the number of types of particle, and m is the energy species number of particle；
    Amendment under the track ionizes absorbed dose of radiation D：D=αT·DT。
  5. 5. the equivalent evaluation method of performance degradation caused by MOS process devices ionization damage according to claim 1, special Sign is that the particle is electronics, proton, heavy ion, photon, meson or neutron.
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CN103116176A (en) * 2013-01-23 2013-05-22 哈尔滨工业大学 Ground equivalent fluence calculating method for electronic component charged particle irradiation effect
EP3063557A1 (en) * 2013-10-28 2016-09-07 Nitto Denko Corporation Dosimetric method
CN106404651A (en) * 2016-10-19 2017-02-15 哈尔滨工业大学 Space radiation effect bioequivalence evaluation method of aliphatic polymer insulation materials for space navigation
CN106645216A (en) * 2016-11-18 2017-05-10 中国航天标准化研究所 Predicting method for degradation of on-orbit performance of insulating material

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