CN114414971A - Method for quantifying proton ionization damage based on dark current of CMOS image sensor - Google Patents
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Abstract
The invention provides a method for quantifying proton ionization damage based on dark current of a CMOS image sensor, which comprises the first step of selecting 2 CMOS image sensors in the same wafer batch and dividing the CMOS image sensors into an A group and a B group, and the second step of carrying out a 70MeV proton irradiation test on the CMOS image sensors of the A group; thirdly, performing structural analysis on the group A CMOS image sensors; fourthly, calculating non-ionization energy loss by adopting particle transport software Geant4, and calculating displacement damage dose; fifthly, adopting particle transport software Geant4 to calculate non-ionization energy loss, and calculating corresponding neutron fluence F according to displacement damage doseni(ii) a Sixthly, performing a reactor neutron irradiation test on the CMOS image sensors in the group B; the seventh step, calculating the space proton ionization damage delta mui，△μi＝μAi‑μBi(ii) a Eighth step, fitting Δ μi‑FpiThe change curve of (2). The method eliminates the influence of displacement damage, quantitatively evaluates the proton ionization damage, accurately pre-judges the on-orbit performance degradation trend of the device, takes protective measures in advance and has important significance for the on-orbit safe operation of the spacecraft.
Description
Technical Field
The invention relates to the technical field of space radiation environment detection, in particular to a method for quantifying proton ionization damage based on a dark current of a CMOS image sensor.
Background
The space natural radiation environment mainly refers to the earth radiation zone, the solar particle event, the Galaxy cosmic rays and the like, and most of the natural radiation environment comprises high-energy electrons, protons and a small part of heavy ions from helium to uranium. Due to the diversity of components, energy and flux of charged particles in a space radiation environment, the space charged particles interact with electronic components on the spacecraft to generate various radiation effects, so that the parameters of the electronic components are degraded, the functions of the electronic components are mutated and the like, and the normal operation of the spacecraft in an orbit is influenced or even the safety of the spacecraft in the orbit is threatened. Because the proton penetrating power is strong, the volume is bigger, the quantity is many, it has the space radiation effect that influences the electron device greatly: total dose effect of ionization, displacement damage effect, single event effect, etc. The total ionization dose effect and the displacement damage effect are collectively called cumulative dose effect, that is, the damage of the radiation dose to electronic components and materials is not instantaneous and must be gradually increased after a long-term accumulation.
The proton irradiation device generates ionization total dose effect and displacement damage effect simultaneously, different effect reinforcement modes are different, and in order to quantitatively distinguish the influence of the two effects on the device, the targeted reinforcement work can be carried out, and ionization damage and displacement damage generated by the proton are required to be quantitatively separated.
Disclosure of Invention
In order to solve the problem that the proton is not accurately evaluated along with the ionization damage while generating the displacement damage, the invention provides a method for quantifying the proton ionization damage based on the dark current of a CMOS image sensor, which is characterized by comprising the following steps of:
firstly, selecting 2 CMOS image sensors in the same wafer batch, dividing the CMOS image sensors into A group and B group, testing the dark current value of each CMOS image sensor as the initial dark current value, and respectively recording the dark current value as muA0、μB0The unit is e/s/pixel;
step two, carrying out 70MeV proton irradiation test on the CMOS image sensor of the group A, wherein the power-on mode of the device is consistent with the space working mode during irradiation, and when the irradiation fluence is accumulated to Fpi(unit is p/cm)2) Stopping irradiation, taking out the CMOS image sensor, testing dark current value, and recording as muAiWherein i is 1, 2 … … m, m is an integer of 2 or more, repeating m times until FpiStopping the proton irradiation test when the preset accumulated fluence F is reached;
thirdly, performing structure analysis on the group A CMOS image sensors to obtain device process and layout structure information;
fourthly, a three-dimensional simulation model is built according to the structural analysis result, and the fluence is calculated to be F by adopting particle transport software Geant4piThe 70MeV proton of (2) is incident on the device, and the non-ionization energy loss is deposited in the CMOS image sensor according to the fluence FpiCalculating the displacement injury dose, and recording as DDiThe unit is MeV/g;
fifthly, calculating the non-ionization energy loss of 1MeV neutrons deposited in the CMOS image sensor by adopting particle transport software Geant4, and according to the displacement damage dose DDiCalculating corresponding neutron fluence Fni；
Sixthly, performing reactor neutron irradiation test on the CMOS image sensors in the B group, wherein the power-on mode of the device during irradiation is consistent with that during proton irradiation, and when the irradiation equivalent 1MeV neutron fluence is accumulatedFniStopping irradiation, testing the dark current value of the CMOS image sensor, and recording the value as muBiRepeat m times until FniReach the preset accumulated injection FnStopping the reactor neutron irradiation test;
the seventh step, calculating the space proton ionization damage delta muiThe calculation method is formula (1)
△μi＝μAi-μBi (1)
Eighth step of irradiating fluence F with protonspiAs abscissa, space proton ionization damage Δ μiFor the ordinate, a two-dimensional coordinate plot is drawn and fitted with Δ μi-FpiIs used to establish a change curve ofi-FpiAnd the mathematical model analyzes a functional relation between the two.
Further, the CMOS image sensor is any one of a linear array CMOS image sensor, an area array CMOS image sensor, and a charge coupled device.
Furthermore, in the first step, more than two CMOS image sensors with even numbers and the same wafer batch are selected and averagely divided into two groups, namely group A and group B.
Further, m is 5.
Further, in the eighth step, Δ μ is establishedi-FpiAnd the mathematical model analyzes a functional relation between the mathematical model and the on-track degradation data, realizes accurate pre-judgment of the on-track performance degradation trend of the device and takes protective measures in advance.
Further, the CMOS image sensor is a GSENSE2020BSI-M CMOS image sensor.
Further, the dark current test is described with reference to international universal standard EMVA1288R3.1.
Further, the dark current of the board test device was evaluated with a test of version EVM-V3.0.
Further, the structural analysis includes internal chip layer dimensions.
The invention has the beneficial effects that:
the invention solves the problem of a space proton incidence deviceThe device has the advantages that the device can simultaneously generate displacement damage and ionization damage after being tested, the proton ionization damage cannot be quantitatively evaluated, and the defects that a designer cannot perform fine design and radiation resistance reinforcement due to the fact that the ionization damage and the displacement damage are not distinguished and only device data are given after an existing proton irradiation test are overcome. The invention provides a method for simultaneously generating ionization damage and displacement damage after proton irradiation is fully considered, and the method for eliminating the influence of the displacement damage and quantitatively evaluating the proton ionization damage is provided aiming at the condition, and the proton ionization damage is quantitatively evaluated through delta mui-FpiThe functional relational expression can quantitatively analyze the change relation between the proton ionization damage and the injection quantity, accurately pre-judge the on-orbit performance degradation trend of the device, make protective measures in advance and have important significance for the on-orbit safe operation of the spacecraft.
Drawings
FIG. 1 is a flow chart of a method for quantifying proton ionization damage based on the dark current of a CMOS image sensor according to the present invention;
FIG. 2 is a schematic diagram of the dimensions of the various layers of an internal chip of a GSENSE2020BSI-M CMOS image sensor in accordance with an embodiment of the present invention;
FIG. 3 shows the spatial proton ionization damage Δ μ of the present inventioniRelative to proton fluence FiThe change curve of (2).
Detailed Description
The invention is further described below with reference to the accompanying drawings:
the invention relates to the technical field of space radiation environment detection, in particular to the technical field of space proton radiation effect detection and evaluation, and belongs to the field of space radiation environment detection.
Through years of research, researchers make radiation damage caused by space proton displacement simulation based on neutron irradiation test development of a reactor based on interaction between neutrons and a silicon device and influence of neutrons on the silicon device by combining a nuclear physics theory and numerical simulation. Based on the method, the influence of displacement damage is eliminated, and accurate reinforcement measures and protection methods are adopted for ionization damage, so that the on-orbit operation life of the spacecraft is prolonged.
FIG. 1 is a flow chart of a method for quantifying proton ionization damage based on the dark current of a CMOS image sensor according to the present invention. The CMOS image sensor is any one of a linear array CMOS image sensor, an area array CMOS image sensor and a charge-coupled device, and is preferably a GSENSE2020BSI-M type CMOS image sensor, because the GSENSE2020BSI-M type CMOS image sensor has acquired a large amount of irradiation test data such as neutrons, protons, gamma rays and the like, the test result shows that the dark current change linearly changes along with the irradiation accumulated fluence (dose).
As shown in fig. 1, in the method for quantifying proton ionization damage based on the dark current of the CMOS image sensor according to the present invention, first, 2 CMOS image sensors of the same wafer lot are selected and divided into a group a and a group B, and the dark current value of each CMOS image sensor is tested as the initial dark current value, which is respectively marked as μA0、μB0The unit is e/s/pixel; in consideration of the test cost, 2 CMOS image sensors of the same wafer lot are used, and if the cost is not considered, more than 2 CMOS image sensors of even number of the same wafer lot can be used, and the average value is taken in each test procedure described below.
Secondly, adjusting the proton energy and fluence rate of the accelerator, powering up and debugging the device, performing a 70MeV proton irradiation test on the CMOS image sensor of the group A, wherein the power-up mode of the device is consistent with the space working mode during irradiation, and F is accumulated when the irradiation fluence is accumulatedpi(unit is p/cm)2) Stopping irradiation, taking out the CMOS image sensor, testing dark current value, and recording as muAiWherein i is 1, 2 … … m, m is an integer of 2 or more, repeating m times until FpiAnd stopping the proton irradiation test when the preset accumulated fluence F is reached.
In one embodiment, when the fluence of the irradiation is accumulated to Fp1(unit is p/cm)2) Stopping irradiation, taking out the CMOS image sensor, testing dark current value, and recording as muA1(ii) a Continuing the 70MeV proton irradiation test, the power-on mode of the device is consistent with the space working mode during irradiation, and when the irradiation fluence is accumulated to Fp2Stopping irradiation, taking out the CMOS image sensor, testing dark current, and recording as muA2(ii) a Continuing the 70MeV proton irradiation testThe power-on mode of the device is consistent with the space working mode during irradiation, and when the irradiation fluence is accumulated to Fp3Stopping irradiation, taking out the CMOS image sensor, testing dark current value, and recording as muA3(ii) a Continuing the 70MeV proton irradiation test, the power-on mode of the device is consistent with the space working mode during irradiation, and when the irradiation fluence is accumulated to Fp4Stopping irradiation, taking out the CMOS image sensor, testing dark current value, and recording as muA4(ii) a Continuing the 70MeV proton irradiation test, the power-on mode of the device is consistent with the space working mode during irradiation, and when the irradiation fluence is accumulated to Fp5Stopping irradiation, taking out the CMOS image sensor, testing dark current value, and recording as muA5。
And thirdly, carrying out structure analysis on the A group of CMOS image sensors to obtain the information of the device process and the layout structure.
Fourthly, a three-dimensional simulation model is built according to the structural analysis result, and the fluence is calculated to be F by adopting particle transport software Geant4piThe 70MeV proton of (2) is incident on the device, and the non-ionization energy loss is deposited in the CMOS image sensor according to the fluence FpiCalculating the displacement injury dose, and recording as DDiThe unit is MeV/g; in one embodiment, the same method is used to calculate fluence Fp1、Fp2、Fp3、Fp4、Fp5The doses of displacement damage deposited in CMOS image sensors, respectively denoted as DD1、DD2、DD3、DD4、DD5。
Fifthly, calculating the non-ionization energy loss of 1MeV neutrons deposited in the CMOS image sensor by adopting particle transport software Geant4, and according to the displacement damage dose DDi(i is 1, 2 … … m), and the corresponding neutron fluence F is calculatedni；
Sixthly, after the device is electrified and debugged, performing reactor neutron irradiation test on the CMOS image sensors of the B group, wherein the electrifying mode of the device is kept consistent with that of the device during irradiation, and when the irradiation equivalent 1MeV neutron fluence is accumulated to FniStopping irradiation, testing the dark current value of the CMOS image sensor, and recording the value as muBiRepeat m times until FniReach the preset accumulated injection FnAnd stopping the reactor neutron irradiation test.
In one embodiment, the neutron fluence accumulates to F when irradiating an equivalent 1MeV neutron fluencen1Stopping irradiation, testing the dark current value of the CMOS image sensor, and recording the value as muB1(ii) a Continuing reactor neutron irradiation test, keeping the power-on mode of the device consistent with that of the proton irradiation during irradiation, and accumulating the equivalent 1MeV neutron fluence to F when the irradiation is equivalentn2Stopping irradiation, testing the dark current value of the CMOS image sensor, and recording the value as muB2(ii) a Continuing reactor neutron irradiation test, keeping the power-on mode of the device consistent with that of the proton irradiation during irradiation, and accumulating the equivalent 1MeV neutron fluence to F when the irradiation is equivalentn3Stopping irradiation, testing the dark current value of the CMOS image sensor, and recording the value as muB3(ii) a Continuing reactor neutron irradiation test, keeping the power-on mode of the device consistent with that of the proton irradiation during irradiation, and accumulating the equivalent 1MeV neutron fluence to F when the irradiation is equivalentn4Stopping irradiation, testing the dark current value of the CMOS image sensor, and recording the value as muB4(ii) a Continuing reactor neutron irradiation test, keeping the power-on mode of the device consistent with that of the proton irradiation during irradiation, and accumulating the equivalent 1MeV neutron fluence to F when the irradiation is equivalentn5Stopping irradiation, testing the dark current value of the CMOS image sensor, and recording the value as muB5。
The seventh step, calculating the space proton ionization damage delta muiThe calculation method is formula (1)
△μi＝μAi-μBi (1)
In one embodiment, i is 1, 2, 3, 4, 5;
eighth step of irradiating fluence F with protonspiAs abscissa, space proton ionization damage Δ μiFor the ordinate, a two-dimensional coordinate plot is drawn and fitted with Δ μi-FpiIs used to establish a change curve ofi-FpiAnd the mathematical model analyzes a functional relation between the two.
The following is a description of a specific example:
firstly, 2 GSENSE2 of the same wafer batch with qualified device electrical parameters after screening is selected020BSI-M CMOS image sensors with the serial numbers of 0602 and 0594 respectively; the device with the number of 0602 is divided into a group A, and the device with the number of 0594 is divided into a group B; the GSENSE2020BSI-M test evaluation board (version EVM-V3.0) developed by device company is adopted to carry out dark current test on the A and B two groups of devices, the test method refers to the international universal standard EMVA1288R3.1, the dark current test results of the A and B two groups of devices are given in Table 1 and are respectively marked as muA0And muB0。
TABLE 1 dark Current test data before test
| Group of | Device numbering | Dark current | Unit of | Remarks for note |
| A | 0602 | μA0＝105.26 | e/s/pixel | |
| B | 0594 | μB0＝132.42 | e/s/pixel |
Performing 70MeV proton irradiation test on the A group device, wherein the device is in an on-orbit real working state in the irradiation process, and when the irradiation fluence is accumulated to 1 × 1010p/cm2Stopping irradiation, taking out the device, and testing the dark current mu of the device by using a test evaluation board (version is EVM-V3.0)A1Measured by μA1＝21153.56e/s/pixel；
Continuing to perform 70MeV proton irradiation test on the A group device, wherein the device is in an on-orbit real working state during irradiation, and when the irradiation fluence is accumulated to 3 multiplied by 1010p/cm2Stopping irradiation, taking out the device, and testing the dark current mu of the device by using a test evaluation board (version is EVM-V3.0)A2Measured by μA2＝62907.93e/s/pixel；
Continuing to perform 70MeV proton irradiation test on the A group device, wherein the device is in an on-orbit real working state during irradiation, and when the irradiation fluence is accumulated to 5 multiplied by 1010p/cm2Stopping irradiation, taking out the device, and testing the dark current mu of the device by using a test evaluation board (version is EVM-V3.0)A3Measured by μA3＝101848.21e/s/pixel；
Continuing to perform 70MeV proton irradiation test on the A group device, wherein the device is in an on-orbit real working state during irradiation, and when the irradiation fluence is accumulated to 7 multiplied by 1010p/cm2Stopping irradiation, taking out the device, and testing the dark current mu of the device by using a test evaluation board (version is EVM-V3.0)A4Measured by μA4＝146022.76e/s/pixel；
Continuing to perform 70MeV proton irradiation test on the A group device, wherein the device is in an on-orbit real working state during irradiation, and when the irradiation fluence is accumulated to 1 × 1011p/cm2Stopping irradiation, taking out the device, and testing the dark current mu of the device by using a test evaluation board (version is EVM-V3.0)A5Measured by μA5＝221103.59e/s/pixel；
And carrying out structure analysis on the A group of devices to obtain device process and layout structure information. The internal chip size of the GSENSE2020BSI-M CMOS image sensor is shown in FIG. 2. The structure analysis result shows that GSENSE2020BSI-M CMOS image sensor tubeThe shell is made of alumina ceramic, and is sealed by glass cover plate and SiO is used on the surface of the chip2Passivation process, SiO2The thickness of the passivation layer is 1.0 μm, and the integrity test of the glass passivation layer is qualified. Four layers of metallization are adopted, and the thicknesses of the first layer, the second layer, the third layer and the fourth layer of aluminum are 554nm, 537nm and 959nm respectively.
Constructing a GSENSE2020BSI-M type three-dimensional simulation model according to the structural analysis result, and calculating the fluence of 1 multiplied by 10 respectively by adopting particle transport software Geant410p/cm2、3×1010p/cm2、5×1010p/cm2、7×1010p/cm2、1×1011p/cm2After 70MeV proton is incident on the device, the non-ionization energy loss is deposited in a GSENSE2020BSI-M type CMOS image sensor, and the displacement damage dose is calculated according to the proton fluence and is marked as DDiThe units are MeV/g, as shown in Table 2.
TABLE 270 non-ionizing energy loss for deposition after MeV incidence device
| Serial number | Proton fluence | Dose of displacement injury | Unit of | Remarks for |
| 1 | 1×1010p/cm2 | 3.3×107 | MeV/ |
|
| 2 | 3×1010p/cm2 | 9.9×107 | MeV/g | |
| 3 | 5×1010p/cm2 | 1.65×108 | MeV/ |
|
| 4 | 7×1010p/cm2 | 2.31×108 | MeV/ |
|
| 5 | 1×1011p/cm2 | 3.30×108 | MeV/g |
The non-ionization energy loss of 1MeV neutrons deposited in the GSENSE2020BSI-M type CMOS image sensor is calculated by adopting particle transport software Geant4, and the DD is determined according to the displacement damage dosei(i is 1, 2, 3, 4, 5), and the corresponding neutron fluence F is calculatedniAs shown in table 3.
TABLE 3 fluence required for equivalent 1MeV neutrons
Performing neutron irradiation test on the B group of devices, wherein the working state of the devices is kept consistent with that of 70MeV proton irradiation in the irradiation process, and the equivalent 1MeV neutron fluence is accumulated to 1.483 multiplied by 10 when the irradiation is equivalent10n/cm2Stopping irradiation, and testing the dark current value mu of the CMOS image sensor by using a test evaluation board (version is EVM-V3.0)B1Measured by μB1＝16870.32e/s/pixel。
The neutron irradiation test is continuously carried out on the B group of devices, the working state of the devices is kept consistent with that of the devices irradiated by 70MeV protons, and when the irradiation equivalent 1MeV neutron fluence is accumulated to 4.449 multiplied by 1010n/cm2Stopping irradiation, and testing the dark current value mu of the CMOS image sensor by using a test evaluation board (version is EVM-V3.0)B2Measured by μB2＝52830.54e/s/pixel。
The neutron irradiation test is continuously carried out on the B group of devices, the working state of the devices is kept consistent with that of the devices irradiated by 70MeV protons, and when the irradiation equivalent 1MeV neutron fluence is accumulated to 7.415 multiplied by 1010n/cm2Stopping irradiation, and testing the dark current value mu of the CMOS image sensor by using a test evaluation board (version is EVM-V3.0)B3Measured by μB3＝85368.75e/s/pixel。
The neutron irradiation test is continuously carried out on the B group of devices, the working state of the devices is kept consistent with that of 70MeV proton irradiation in the irradiation process, and when the irradiation equivalent 1MeV neutron fluence is accumulated to 1.038 multiplied by 1011n/cm2Stopping irradiation, and testing the dark current value mu of the CMOS image sensor by using a test evaluation board (version is EVM-V3.0)B4Measured by μB4＝120267.39e/s/pixel。
Continuing to perform neutron irradiation test on the B group of devices, wherein the devices in the irradiation processThe working state is kept consistent with that of 70MeV proton irradiation, and the equivalent 1MeV neutron fluence is accumulated to 1.483 multiplied by 10 when the irradiation is carried out11n/cm2Stopping irradiation, and testing the dark current value mu of the CMOS image sensor by using a test evaluation board (version is EVM-V3.0)B5Measured by μB5＝190452.41e/s/pixel。
According to the formula Δ μi＝μAi-μBiWhere i is 1, 2, 3, 4, 5, calculating the spatial proton ionization damage Δ μi. The calculation results are shown in table 4.
TABLE 4 space proton ionization Damage Δ μiCalculation results
| Serial number | Group A of muAi | Group B of uBi | △μi | Unit of | Remarks for |
| 1 | 21153.56 | 16870.32 | 4283.24 | e/s/ |
|
| 2 | 62907.93 | 52830.54 | 10077.39 | e/s/pixel | |
| 3 | 101848.21 | 85368.75 | 16479.46 | e/s/ |
|
| 4 | 146022.76 | 120267.39 | 25755.37 | e/s/ |
|
| 5 | 221103.59 | 190452.41 | 30651.18 | e/s/pixel |
Fluence of irradiation F with protonsiAs abscissa, spatial proton displacement damage Δ μiFor the ordinate, a two-dimensional coordinate plot is drawn and fitted with Δ μi-FiAs shown in fig. 3.
Establishing a delta mu according to the data and the coordinate graphi-FpiA mathematical model for analyzing the functional relationship between the twoFormula (d) isi＝6387.1Fpi1409.1, combining the on-track degradation data to realize accurate pre-judgment of the on-track performance degradation trend of the device, and making protective measures in advance.
The above description is only for the best mode of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention.
Those skilled in the art will appreciate that the invention may be practiced without these specific details.
Claims (9)
1. A method for quantifying proton ionization damage based on CMOS image sensor dark current is characterized by comprising the following steps:
firstly, selecting 2 CMOS image sensors in the same wafer batch, dividing the CMOS image sensors into A group and B group, testing the dark current value of each CMOS image sensor as the initial dark current value, and respectively recording the dark current value as muA0、μB0The unit is e/s/pixel;
step two, carrying out 70MeV proton irradiation test on the CMOS image sensor of the group A, wherein the power-on mode of the device is consistent with the space working mode during irradiation, and when the irradiation fluence is accumulated to Fpi(unit is p/cm)2) Stopping irradiation, taking out the CMOS image sensor, testing dark current value, and recording as muAiWherein i is 1, 2 … … m, m is an integer of 2 or more, repeating m times until FpiStopping the proton irradiation test when the preset accumulated fluence F is reached;
thirdly, performing structure analysis on the group A CMOS image sensors to obtain device process and layout structure information;
fourthly, a three-dimensional simulation model is built according to the structural analysis result, and the fluence is calculated to be F by adopting particle transport software Geant4piThe 70MeV proton of (2) is incident on the device, and the non-ionization energy loss is deposited in the CMOS image sensor according to the fluence FpiCalculating the displacement injury dose, and recording as DDiThe unit is MeV/g;
the fifth step, adoptParticle transport software Geant4 calculates non-ionization energy loss of 1MeV neutron deposited in CMOS image sensor according to displacement damage dose DDiCalculating corresponding neutron fluence Fni；
Sixthly, performing reactor neutron irradiation test on the CMOS image sensors in the group B, wherein the power-on mode of the device during irradiation is consistent with that during proton irradiation, and when the irradiation equivalent 1MeV neutron fluence is accumulated to FniStopping irradiation, testing the dark current value of the CMOS image sensor, and recording the value as muBiRepeat m times until FniReach the preset accumulated injection FnStopping the reactor neutron irradiation test;
the seventh step, calculating the space proton ionization damage delta muiThe calculation method is formula (1)
△μi＝μAi-μBi (1)
Eighth step of irradiating fluence F with protonspiAs abscissa, space proton ionization damage Δ μiFor the ordinate, a two-dimensional coordinate plot is drawn and fitted with Δ μi-FpiIs used to establish a change curve ofi-FpiAnd the mathematical model analyzes a functional relation between the two.
2. The method of claim 1, wherein the CMOS image sensor is any one of a linear CMOS image sensor, an area CMOS image sensor, and a charge coupled device.
3. The method of claim 1, wherein in the first step, more than two CMOS image sensors of even number of the same wafer lot are selected and divided into two groups A and B.
4. The method for quantifying proton ionization damage based on CMOS image sensor dark current of claim 1, wherein m is 5.
5. The method for quantifying proton ionization damage based on CMOS image sensor dark current according to claim 1, wherein in the eighth step, Δ μ is establishedi-FpiAnd the mathematical model analyzes a functional relation between the mathematical model and the on-track degradation data, realizes accurate pre-judgment of the on-track performance degradation trend of the device and takes protective measures in advance.
6. The method for quantifying proton ionization damage based on CMOS image sensor dark current of claim 1, wherein the CMOS image sensor is a GSENSE2020BSI-M CMOS image sensor.
7. The method for quantifying proton ionization damage based on CMOS image sensor dark current according to claim 1, wherein the dark current test method refers to international universal standard EMVA1288R 3.1.
8. The CMOS image sensor dark current-based method for quantifying proton ionization damage according to claim 1, wherein the dark current of the board test device is evaluated with a test version EVM-V3.0.
9. The method for quantifying proton ionization damage based on CMOS image sensor dark current of claim 1, wherein the structural analysis comprises internal chip layer dimensions.
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