CN104459372A - Displacement damage dosage detection method based on p-i-n structure - Google Patents
Displacement damage dosage detection method based on p-i-n structure Download PDFInfo
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Abstract
The invention relates to a displacement damage dosage detection method based on a p-i-n structure. The method comprises the steps that a probe of the p-i-n structure is screened, detector parameters are adjusted and determined, and the detector response is obtained and calibrated under different radioactive sources; according to non-ionizing energy loss (NIEL) of different radioactive sources for probe materials, the detector response and the fluence or dosage relation of different radioactive sources are unified into the relation between the detector response and displacement damage dosage; according to the actual detection result, a damage enhancement factor is determined. The displacement damage dosage detection method has the advantages that the detected physical quantity is displacement damage dosage and comprises any particle capable of causing the displacement damage effect; compared with detection particle species and energy spectra, the displacement damage degree of a semiconductor element can be directly reflected; a detector based on the structure is portable, flexible, easy to use and applicable to space environment monitoring, semiconductor element displacement damage effect estimation and service life prediction.
Description
Technical field
The present invention relates to radiation environment detection method, particularly a kind of displacement damage dose detecting method based on p-i-n junction structure, belong to radiation effect assessment technology, radiation field Detection Techniques and microelectric technique.
Background technology
Space radiation environment comprises galactic comic ray, solar activity event and the earth and captures band, and cause Space Radiation Effects to components and parts, displacement damage effect is one of them.Galactic cosmic line model, AP-8, AE-8 model and solar proton model that the model of current description space radiation environment has US National Aeronautics and Space Administration (NASA) etc. to announce, give the elemental abundance of high energy particle and flux under different-energy, the earth captures band inner proton and electron energy and space distribution, and by the disturbance situation of periodically sun event.
Because displacement damage effect is space radiation environment and the interactional result of components and parts semiconductor material, the i.e. crystal lattice undergoes elastic scattering of high energy proton, electronics and other high energy particles and first equipment material in space radiation environment, with form sedimentary energy in lattice of unionized energy, form the lattice imperfection being principal mode with tufted defect and point defect, and produce corresponding defect level, make components and parts be subject to irreversible performance, parameter degradation.Above-mentioned space radiation environment model only describes particle kind, energy and flux, still insufficient to the support of research displacement damage effect, and reason is the complicacy of the diversity of space radiation environment and device architecture, technique.According to first principle, a very complicated process from the parameter degradation of particle incident semiconductor material derivation practical devices, and continuing to bring out along with new unit, analog simulation aspect large quantity research of still needing needs to carry out, and does not have feasibility when actual assessment device displacement damage effect.
Study general method at present to displacement damage effect, launch with the Nonionizing Energy Loss NIEL of G.P.Summers proposition and displacement damage dose Dd, its thought is NIEL according to the incident different materials of variety classes particle and particle fluence Φ, and the various radiation environment factors of displacement damage can be caused to be unified into Dd.For a device to be assessed, draw the relation of device parameters degeneration and Dd in ground simulating, according to the difference of variety classes particle beam irradiation result, draw damage enhancer κ, namely particle causes the weight of displacement damage separately.If this device space applied environment and the length of service known, can according to space radiation environment model pre-estimating particle kind, energy and flux, according to each particle weights, be converted into the Dd under single kind particle, single energy, so when assessing this device displacement damage effect, a kind of particle beams of available single energy, as 1MeV neutron, its actual space radiation environment of equivalence is to the contribution of displacement damage effect.The method can realize displacement damage effect assessment accurately and quickly, to meet engineering demand.
But ground irradiation devices as proton, electronics, heavy ion etc. cause displacement damage while also can cause ionization damage.The important prerequisite that said method is achieved is, needs a kind of responsive to displacement damage, to the insensitive detector of ionization damage.When detector carries out irradiation under the different particle beams, during according to the equivalent Dd responded separately under convert different particle kind, different-energy, that must get rid of ionization damage affects its validity of guarantee.
Displacement damage effect evaluation work is badly in need of a kind of displacement damage dose detecting method, ensures that evaluation test can correctly be carried out, and ensures the accuracy of electronic devices and components life prediction in space environment.
Summary of the invention
The object of the invention is, provides a kind of displacement damage dose detecting method based on p-i-n junction structure, and the method comprises the probe of screening p-i-n junction structure, detector, and parameter detector adjustment and confirmation, obtain explorer response and demarcate under different radioactive source; According to the Nonionizing Energy Loss NIEL of different radioactive source to probe material, the relation of explorer response and different radioactive source fluence or dosage is unified into the relation of explorer response and displacement damage dose; Determine to damage enhancer according to actual detection result.The method advantage is that the physical quantity that it detects is displacement damage dose, comprises any particle that can cause displacement damage effect; Compared with particle detection kind, power spectrum, directly can reflect the displacement damage degree of semiconductor components and devices; Detector based on this structure is portable, flexible, easy-to-use, is applicable to Space environment monitor, the assessment of semiconductor components and devices displacement damage effect and life prediction.The method detects different from the physics such as particle kind, power spectrum, be intended to detection electronic devices and components by after irradiation, through the absorbed dose that unionized process causes, be a kind of detection method for engineer applied, for displacement damage effect assessment and research work provide basic data support.
Displacement damage dose detecting method based on p-i-n junction structure of the present invention, follows these steps to carry out:
The probe of a, screening p-i-n junction structure, the probe of screening is known the real situation test, two groups of probes are placed in the irradiation bomb that can produce displacement damage and the irradiation bomb not producing displacement damage respectively, obtain I-V characteristic by displacement test, confirm that this probe is responsive and insensitive to ionization damage to displacement damage;
B, development detector, detector is two pieces of pcb boards, and one piece is probe module, is placed in irradiation bomb irradiation; Another block is constant current source module, signal acquisition module and control module, is connected with collection signal by concentric cable with probe module, is connected with PC and controlled simultaneously;
C, according to know the real situation test findings, by selecting pcb board resistance adjustment detector hardware parameter, as constant current source driving force, sensor sensitivity, range; By arranging the data acquisition parameters such as PC software determination sampling channel, sampling rate, digital filtering, and make it solidification;
D, detector being connected with PC and debugging normal, the probe module of detector being placed in irradiation under the different particle beams, simultaneously by arranging response and the temperature of PC software online acquisition detector;
E, according to the Nonionizing Energy Loss of different radioactive source to probe material, the relation of explorer response and different particle source fluence or dosage is converted to the relation of explorer response and displacement damage dose;
F, when explorer response reaches predetermined value, find out the displacement damage dose of different particle source, determine to damage enhancer κ according to their proportionate relationship.
Require in step b detector that constant current source module noise is low; When probe module load increases, constant current source driving force is unattenuated, is controlled during collection signal by PC.
According to the response of detector under the different particle beams, damage enhancer κ, in conjunction with the space radiation environment of electronic devices and components work, equivalent ground simulation test condition can be conversed.
A kind of displacement damage dose detecting method based on p-i-n junction structure of the present invention, the method includes the steps of:
First carrying out test of knowing the real situation, measure the relation of I-V curve with particle fluence with semiconductor parameter testing system, formulate probe accordingly and drive and signals collecting mode, surveying voltage as applied pulsed constant current drive;
Prepare two groups of p-i-n junction structures probe, power up to mode of operation, one group is placed in the irradiation bomb that proton or electronics can produce displacement damage, confirms that sonde response increases with fluence; Another group is placed in
60co γ etc. does not produce in the ionizing radiation source of displacement damage, irradiation dose is identical with the ionization absorbed dose that proton or electronics produce, confirm that probe exports without marked change, for proton, proton fluence and its ionization absorbed dose produced in silicon materials are scaled formula and are:
D
i＝1.602×10
10gΦg(dE/dx)
Wherein Di ionizes absorbed dose; Φ is fluence; DE/dx is stopping power;
Secondly, verify this probe only to after displacement damage sensitivity, with electric design automation Software for Design detector, comprise p-i-n junction structure probe module, constant current source module, signal acquisition module, PC software and interconnection, and output file is delivered to PCB processor, pcb board processes rear welding component, writes software program, and debug function is normal;
After function debugging is normal, regulate parameter detector, strobe pulse formula constant current forward injection probe, constant current value and pulsewidth and dutycycle need be determined, under different constant current drive condition, responding range when monitoring and record probe irradiation and sensitivity, select suitable constant current according to condition to be measured; Generate the digital signal of distinct pulse widths and dutycycle combination, as constant current source and data acquisition module enable signal, monitor and record the output signal of probe under isoperibol, selecting suitable pulsewidth and dutycycle accordingly, drift about to avoid probe to export temperature influence;
Probe is placed in the different irradiation bombs that can produce displacement damage, as proton and electronics, record the relation of explorer response and particle fluence Φ respectively, the Nonionizing Energy Loss according to respective particle hinders (NIEL), fluence is converted to displacement damage dose Dd, conversion formula is:
Wherein E is projectile energy, Emax and Emin is particle energy upper and lower bound respectively, Φ is particle fluence, choose a certain value within the scope of explorer response, when the output of detector reaches this value, record the displacement damage dose Dd of each particle of its correspondence, determine to damage enhancer κ according to its proportionate relationship;
If assessment operates in the electronic devices and components life-span of a certain track, first according to the particle kind at this place of space radiation environment model pre-estimating, energy distribution and flux, then NIEL displacement calculating damage dose Dd is hindered according to respective Nonionizing Energy Loss, in conjunction with damage enhancer κ, the a certain particle of the displacement damage dose single energy of space radiation environment is come equivalent, namely only a kind of particle of single energy need be chosen as irradiation bomb in the irradiation experiment of ground, as the neutron of 1MeV, monitor the fluence of this component failure, just can dope the life-span of this device.
A kind of displacement damage dose detecting method based on p-i-n junction structure of the present invention, compared with prior art its advantage is:
(1), detection method of the present invention from detect different with particle kind, power spectrum, flux, avoid the imitation technology bottleneck from first principle and complex devices structure, thus displacement damage effect evaluation work effectively carried out.
(2), detection method of the present invention solves the problem getting rid of ionization damage impact in displacement damage dose detection process, achieves displacement damage and is separated detection with ionization damage.
(3) detector that, the present invention proposes is easy to realization, applicability is strong, collocation is flexible, solve real space radiation environment and ground simulating environment equivalent problems, the particle by multiple particle, wide power spectrum, change flux single kind, energy effectively replaces.
Accompanying drawing explanation
Fig. 1 is displacement damage dose of the present invention detection process flow diagram;
Fig. 2 is reverse I-V characteristic of popping one's head under electron irradiation condition of the present invention, and wherein-zero-expression Electron fluence is 1E14ecm-2 ,--expression Electron fluence is 5E14ecm
-2,-△-expression Electron fluence is 1E15ecm
-2,
expression Electron fluence is 5E15ecm
-2,
expression Electron fluence is 1E16ecm
-2,
expression Electron fluence is 5E16ecm
-2,
expression Electron fluence is 1E17ecm
-2;
Fig. 3 is forward I-V characteristic of popping one's head under electron irradiation condition of the present invention, and wherein-zero-expression Electron fluence is 1E14ecm-2 ,--expression Electron fluence is 5E14ecm
-2,-△-expression Electron fluence is 1E15ecm
-2,
expression Electron fluence is 5E15ecm
-2,
expression Electron fluence is 1E16ecm
-2,
expression Electron fluence is 5E16ecm
-2,
expression Electron fluence is 1E17ecm
-2;
Fig. 4 is displacement damage of the present invention detection detector theory diagram, wherein a is by upper this detector of PC procedure operation, b be control module control modules, c for constant current source for probe excitation is provided, d is digital collection probe output voltage, and e is for preserving data to upper PC;
Fig. 5 is the response diagram of detector of the present invention under proton irradiation condition;
Fig. 6 is the response diagram of detector of the present invention under electron irradiation condition;
Fig. 7 is the graph of a relation of explorer response and fluence under the different flux of the present invention, and wherein-zero-expression proton fluence is 5E7ecm
-2s
-1,--expression proton fluence is 2E8ecm
-2s
-1;
Fig. 8 is that the present invention considers the response diagram of detector under proton, electron irradiation condition after enhancer, wherein-zero-represent proton, the equivalent situation of--expression electronics enhancer κ=16.8;
Fig. 9 is displacement damage effect estimation flow figure of the present invention.
Embodiment
Embodiment
The probe of a, screening p-i-n junction structure, the probe of screening is known the real situation test, two groups of probes are placed in the irradiation bomb that can produce displacement damage and the irradiation bomb not producing displacement damage respectively, obtain I-V characteristic by displacement test, confirm that this probe is responsive and insensitive to ionization damage to displacement damage;
Fig. 1 is displacement damage dose detection process flow diagram, to know the real situation test to p-i-n junction structure probe according to step a.Under p-i-n junction structure probe is placed in electron irradiation condition, be 1E14ecm in fluence
-2, 5E14ecm
-2, 1E15ecm
-2, 5E15ecm
-2, 1E16ecm
-2, 5E16ecm
-2, 1E17ecm
-2time, by semiconductor test system keithley4200 off-line acquisition probe I-V characteristic, as Fig. 2,3;
Determine the signals collecting pattern that p-i-n junction structure is popped one's head in, because inverse current is faint, measurement means comparatively forward voltage tester is complicated, therefore adopts the drainage pattern applying forward current survey voltage, considering the impact gathering power consumption and bring, determining that signals collecting pattern surveys voltage for adding direct impulse electric current;
Determine that this probe is insensitive to ionization damage, use
60the ionization absorbed dose that Co γ equivalence proton produces, proton fluence and its ionization absorbed dose produced in silicon materials are scaled formula and are:
D
i＝1.602×10
10gΦg(dE/dx)
Wherein silicon materials are to the stopping power dE/dx=34.79MeVcm of proton
-1g
-1, as proton fluence Φ=1E12pcm
-2time, the ionization absorbed dose of generation is 5.57M rad/Si, under the excitation of 1mA forward current, be irradiated to 5.57M rad/Si, voltage exports and increases to 0.55V by 0.54V, demonstrates this probe insensitive to ionization damage, thus eliminates the impact of ionization damage in proton irradiation process;
B, development detector, detector is two pieces of pcb boards, and one piece is probe module, is placed in irradiation bomb irradiation; Another block is constant current source module, signal acquisition module and control module, is connected with collection signal by concentric cable with probe module, is connected with PC and controlled simultaneously, wherein requires in detector that constant current source module noise is low; When probe module load increases, constant current source driving force is unattenuated, controls (Fig. 4) during collection signal by PC;
C, according to know the real situation test findings, by selecting pcb board resistance adjustment detector hardware parameter, as constant current source driving force, sensor sensitivity, range; By arranging the data acquisition parameters such as PC software determination sampling channel, sampling rate, digital filtering, and make it solidification;
Parameter detector is regulated according to step c, after detector is connected, according to the demand determination exciting current amplitude of the I-V characteristic of knowing the real situation in test findings, sensitivity, range, can judge that large exciting current is highly sensitive by the relation of Fig. 2 fluence and forward voltage, little exciting current range is large, this example determines that exciting current is 1mA, realize at pcb board by selecting the resistance welded of suitable resistance, the data acquisition parameters such as acquisition channel, sampling rate, digital filtering are set in PC software, to meet data acquisition request;
D, detector being connected with PC and debugging normal, the probe module of detector being placed in irradiation under the different particle beams, simultaneously by arranging response and the temperature of PC software online acquisition detector;
Perform irradiation and image data according to steps d, after detector, PC are connected debugging, under probe module being placed in 10M proton and 1.8M electron irradiation condition, on PC, run online data acquisition program simultaneously; Fig. 5 is the response of detector under proton irradiation condition, and Fig. 6 is the response of detector under electron irradiation condition, and Fig. 7 is the relation of explorer response and fluence under different flux;
E, according to the Nonionizing Energy Loss of different radioactive source to probe material, the relation of explorer response and different particle source fluence or dosage is converted to the relation of explorer response and displacement damage dose;
Calculate the displacement damage dose Dd of the different particle beams according to step e, obtain the relation of sonde response and different particle beams displacement damage dose Dd.The conversion formula of fluence and displacement damage dose Dd is:
The NIEL of proton, electronics is respectively 8E-3 Mevg
-1cm
-2with 4.5E-5 Mevg
-1cm
-2, E is projectile energy, Emax and Emin is particle energy upper and lower bound respectively, and Φ is particle fluence, and when calculating the output of proper detector for 1.5V, the displacement damage dose of proton and electronics is 8E9MeV/g and 13.5E10MeV/g;
F, when explorer response reaches predetermined value, find out the displacement damage dose of different particle source, determine to damage enhancer κ according to their proportionate relationship;
Enhancer κ is determined according to step f, when selected detector responds as 1.5V under proton, electron irradiation, determine enhancer κ, the displacement damage that now electronics, proton cause has equivalence, and the displacement damage dose according to proton and electronics determines enhancer κ=13.5E10/8E9=16.875; Fig. 8 is the response of detector under proton, electron irradiation condition after consideration enhancer, when the coordinate of electron displacement damage dose is punctured into 1/16.875, curve shape and proton response curve are consistent, therefore establish the equivalent relation of displacement damage dose between proton and electronics;
Fig. 9 is displacement damage effect estimation flow figure, according to the response of detector under the different particle beams, damage enhancer (κ), in conjunction with the space radiation environment of electronic devices and components work, and the Nonionizing Energy Loss of particle incident material (NIEL), equivalent ground simulation test condition can be conversed, thus spatial complex radiation environment is changed into specified particle single energy, simple radiation environment that fluence is determined, solve the problem of complex space radiation environment ground radiation environment equivalence, improve the enforceability of displacement damage effect evaluation work.The invention provides a kind of displacement damage dose Detection Techniques based on p-i-n junction structure, achieve the application of displacement damage effect assessment in engineering.
Claims (2)
1., based on a displacement damage dose detecting method for p-i-n junction structure, it is characterized in that following these steps to carry out:
The probe of a, screening p-i-n junction structure, the probe of screening is known the real situation test, two groups of probes are placed in the irradiation bomb that can produce displacement damage and the irradiation bomb not producing displacement damage respectively, obtain I-V characteristic by displacement test, confirm that this probe is responsive and insensitive to ionization damage to displacement damage;
B, development detector, detector is two pieces of pcb boards, and one piece is probe module, is placed in irradiation bomb irradiation; Another block is constant current source module, signal acquisition module and control module, is connected with collection signal by concentric cable with probe module, is connected with PC and controlled simultaneously;
C, according to know the real situation test findings, by selecting pcb board resistance adjustment detector hardware parameter, as constant current source driving force, sensor sensitivity, range; By arranging the data acquisition parameters such as PC software determination sampling channel, sampling rate, digital filtering, and make it solidification;
D, detector being connected with PC and debugging normal, the probe module of detector being placed in irradiation under the different particle beams, simultaneously by arranging response and the temperature of PC software online acquisition detector;
E, according to the Nonionizing Energy Loss of different radioactive source to probe material, the relation of explorer response and different particle source fluence or dosage is converted to the relation of explorer response and displacement damage dose;
F, when explorer response reaches predetermined value, find out the displacement damage dose of different particle source, determine to damage enhancer according to their proportionate relationship
κ.
2. method according to claim 1, is characterized in that requiring in step b detector that constant current source module noise is low; When probe module load increases, constant current source driving force is unattenuated, is controlled during collection signal by PC.
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| CN108254668A (en) * | 2018-02-09 | 2018-07-06 | 哈尔滨工业大学 | It is a kind of to analyze the method for interface state defects being accelerated to be formed during electronic component ionization radiation injury mechanism |
| CN109471148A (en) * | 2018-09-28 | 2019-03-15 | 兰州空间技术物理研究所 | Proton displacement damage dose method and device is measured using quantum thirty conductor device |
| CN109471148B (en) * | 2018-09-28 | 2023-06-13 | 兰州空间技术物理研究所 | Method and device for measuring proton displacement damage dose by utilizing quantum dot semiconductor device |
| CN110221336A (en) * | 2019-06-24 | 2019-09-10 | 中国科学院新疆理化技术研究所 | A kind of multimetering method based on PMOS dosimeter |
| CN113126142A (en) * | 2021-04-16 | 2021-07-16 | 应急管理部国家自然灾害防治研究院 | High-energy particle detector performance evaluation method and system |
| CN113126142B (en) * | 2021-04-16 | 2022-04-01 | 应急管理部国家自然灾害防治研究院 | High-energy particle detector performance evaluation method and system |
| CN114414971A (en) * | 2021-12-14 | 2022-04-29 | 上海精密计量测试研究所 | Method for quantifying proton ionization damage based on dark current of CMOS image sensor |
| CN114414971B (en) * | 2021-12-14 | 2024-05-28 | 上海精密计量测试研究所 | Method for quantifying proton ionization damage based on dark current of CMOS image sensor |
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