CN103996673A - Method for improving total dosage effect of anti-ionizing radiation of device - Google Patents
Method for improving total dosage effect of anti-ionizing radiation of device Download PDFInfo
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- CN103996673A CN103996673A CN201410220512.9A CN201410220512A CN103996673A CN 103996673 A CN103996673 A CN 103996673A CN 201410220512 A CN201410220512 A CN 201410220512A CN 103996673 A CN103996673 A CN 103996673A
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Abstract
The invention relates to a method for improving the total dosage effect of anti-ionizing radiation of a device. The method comprises the first step of manufacturing a single-layer structure composite material, the second step of manufacturing a multi-layer structure composite material, the third step of measuring transmission coefficients of an electron beam in the composite materials, the fourth step of simulating and calculating theoretical transmission coefficients of the materials based on the Monte Carlo particle transporting method, the fifth step of correcting the electronic transmission coefficients, and the sixth step of carrying out secondary packing on corresponding chips of the device through the composite materials with the best shielding effect. By means of the method, the shielding effect is best, the packing weight is minimal, and the total dosage effect of anti-ionizing radiation of the spacecraft device can be improved.
Description
Technical field
The invention belongs to the application in astrionics field of electronic technology and nuclear technology, be specifically related to a kind of method of utilizing shadow shield design to improve device ionizing radiation-resistant total dose effect ability.
Background technology
Space radiation environment mainly comprises cosmic ray, Van Allen belt (Van Allen Belt), solar flare, solar electromagnetic radiation and auroral radiation etc.Different track radiation environment differences.The inside and outside Van Allen belt that is positioned at overhead, equator for what threaten maximum around the spacecraft of earth operation, they are mainly made up of high energy proton (10～100MeV) and high-energy electron (0.4～7MeV), and the dose rate of raying can reach respectively 1Gy (Si)/h and tens of Gy (Si)/h.For LEO (Low Earth Orbit), radiation dose comprises electronics and the proton of capturing band, and for geostationary orbit, dosage is mainly the contribution of electronics.
The electronics of natural space radiation, proton can cause device generation ionising radiation total dose effect, improve device ionizing radiation-resistant total dose effect and can adopt shielding protection, first to consider the decay of other parts such as satellite shell, system box body, then according to the device package shielding thickness of track and the requirement of aerial mission Time Calculation.
Microelectronic circuit packages shielding can be thought sandwiched structure, has pressed from both sides Si layer (IC chip) at two between tabular.Low Z materials, for example tungsten, tantalum are the materials of best shielding primary electron, optimize screening mass thickness and are less than 1.5g/cm
2; Low Z materials (material that atomic number is high), for photon (not being from shielding material itself) or the pulse of nuclear exoatmospheric burst initial X-ray of secondary bremsstrahlung, is also that the first selection is considered; What pay special attention to is, while selecting low Z materials to make shielding protection, between low Z materials and chip, to there is enough thick low Z encapsulating material, the thickness of material is generally greater than secondary photoelectronic range, so both reached shield effectiveness, the secondary electron that can not produce because of the low Z materials of secondary encapsulation again causes the radiation damage of enhancing to device.
Low/middle Z material is better for proton shielding, but in one timing of shielding validity, it is thicker that material is wanted, and this may be inadvisable for the situation that has volume restrictions.Low/middle Z material is also smaller to the bremsstrahlung of electron production, and mass thickness is greater than 1.5g/cm
2time, shield effectiveness is best.
SEI (SPACE ELECTRONICS INC.) is the subsidiary of the MAXIMUM of famous American semiconductor company, aim at the U.S. highly reliable radioresistance very lagre scale integrated circuit (VLSIC) is provided, the said firm now develops, develops the various technique method for packing that improve radiation resisting capability of device.Data shows, these techniques are for the circuit of the satellite of LEO and geostationary orbit, and its resistant to total dose level is greater than 100krad (Si).
Summary of the invention
For improving spacecraft device ionizing radiation-resistant total dose effect, when ensureing that shield effectiveness is best, make package quality minimum, the invention provides a kind of method that improves device ionizing radiation-resistant total dose effect, its special character is: comprise the following steps:
1) make single layer structure composite material:
Selecting different metal dusts to add in leaded 10% resin solidifies, wherein plumbous content is weight resin 10%, is various composite materials through die forming, and described metal dust is Al, Ta or Kovar, its content range is the 0.1%-0.8% of weight resin
2) make layer composite material:
Single layer structure composite material is combined, be made into the composite material of double-deck and sandwich structure, the described double-deck Al/Ta combination that is combined as, the Al/Ta/Kovar that is combined as of described sandwich structure combines;
3) transmission coefficient of Measurement of Electron Beam in composite material:
After the composite material of the electron beam that electron accelerator produces through double-deck and sandwich structure, received by the Faraday cup under vacuum environment, the electric current producing is sent into line integrator after shielded cable, thereby obtains the measurement transmission coefficient of this composite material;
4) the theoretical transmission coefficient of employing Monte-Carlo particle transportation method analog computation material:
Adopt the analog computation of Monte-Carlo particle transportation method, each calculating followed the tracks of 200,000 particles, the simulation principle of taking photon after first electronics, all secondary processes of the secondary photon to electronics and generation and secondary electron all carry out simulation tracing, until that all particles is followed the tracks of is complete;
5), according to the comparison of analog computation and experimental measurement result, corrected Calculation model repeatedly, calculates the electronic transmission coefficient of different-energy electron beam incident single layer structure composite material and double-deck and sandwich structure composite material;
6) electronic transmission coefficient of comparison single layer structure composite material and layer composite material, determines the composite material that shield effectiveness is best, carries out secondary encapsulation at the respective chip place of device, can improve device ionizing radiation-resistant total dose effect.
In the composite material manufacturing process of step 1, the content of adjusting various metal dusts is identical to ensure the surface density of various composite materials;
In step 2, each layer thickness mean allocation of the composite material of bilayer and sandwich structure.
When above-mentioned steps 4 adopts the analog computation of Monte-Carlo particle transportation method, specifically take Berger compression histories method, calculate by Moliere multiple-scattering theory and Goudmsit-Saudon multiple-scattering theory.
Beneficial effect of the present invention:
The present invention makes single layer structure composite material and layer composite material, pass through electron beam test, according to the comparison of analog computation and experimental measurements, corrected Calculation model repeatedly, calculate the electronic transmission coefficient of different-energy electron beam incident composite material, thereby determine the composite material of shielding properties optimum.According to determined composite material, the respective chip of device is carried out to secondary encapsulation again, thereby improve device ionizing radiation-resistant total dose effect.
The present invention, in ensureing that shield effectiveness is best, makes package quality minimum, can improve spacecraft device ionizing radiation-resistant total dose effect.
Brief description of the drawings
Fig. 1 is theoretical calculation model schematic diagram;
Fig. 2 is aluminum different-energy sedimentary section;
Fig. 3 is tungsten material different-energy sedimentary section;
Fig. 4 is that electronic transmission coefficient is measured experimental rig schematic diagram;
Fig. 5 is the comparison of metal A l the calculated results and measurement result;
Fig. 6 is the comparison of metal Ta the calculated results and measurement result;
Fig. 7 is the comparison of Kovar materials theory result of calculation and measurement result;
Fig. 8 is composite material different-energy sedimentary section.
Embodiment
The process of the inventive method:
1, adopt the transmission coefficient of Monte-Carlo particle transportation method analog computation homogenous material
Theoretical modeling calculates and adopts Monte-Carlo particle transportation method.With the two-dimentional TIGERP analog computation of ITS series of programs.For above-mentioned radiation parameter, to several typical materials computation model that theorizes, each calculating followed the tracks of 200,000 particles.All secondary processes of the secondary photon to electronics and generation in calculating and secondary electron all carry out simulation tracing.Computational process has been considered the coupling process of photon-electronics fully, and the secondary event that electronics is caused has considered that a piece of wood serving as a brake to halt a carriage causes the annihilation of photon, atomic ionization generation impingement of electrons and electron-positron pair.Atom, Electron Relaxation process have been considered corresponding electronics, the photon that the various relaxation processes between K, L, M shell produce and transported, and the effects such as photoelectric absorption, coherent scattering, incoherent scattering have been considered in photon transport.
There is bremsstrahlung in electronics, produce photon in transport process.Photon also may produce secondary electron, so this is photon and electronics coupled transport process.Source particles is sampled, extract locus, direction, energy, the weight of source particles, determine initial condition (r, Ω, E, W), with force collision technology sampling free path distance l, new position of collision r '=r+l Ω, locate to determine at r ' particle with any atom of any material, what class occurs and reacts, by incident direction Ω, energy E and differential cross-section sample out exit direction Ω ' and outgoing energy E ', photon in transport process with nuclear interaction, can produce secondary electron. same, electronics can produce secondary photon in transport process.To this, take the simulation principle of photon after first electronics, in the time that photon (comprising source photon and secondary photon) has produced secondary electron, first simple photon is deposited in photon storehouse, follow the tracks of immediately secondary electron, in the time of electron production secondary photon, first secondary photon is deposited in to photon storehouse, continue to follow the tracks of simple electronics.This principle processing is all pressed to by arbitrary branch.After the history of an electronics branch finishes, first check electronic library, if in stock when electronics, just by after deposit the principle of first taking out in and take out electronics in storehouse and simulate.After electronics is followed the tracks of in storehouse, then check photon storehouse, if photon in stock carries out equally.Now likely produce electronics, photon must be stored away, follow the tracks of electronics.Until photon storehouse is without photon, then restart a history.Until all particles tracking is complete.
Electronics is charged particle, and it,, owing to being subject to Coulomb force effect, multiple impacts occurs in medium.While decelerating to 0.25MeV such as an electronics by 0.5MeV, in the distance of walking, approximately need to collide 2.9 × 10 in aluminium
4inferior, and being needed only to it, γ photon will drop to 50keV from several MeV through 20～30 Compton scatterings; Therefore, the Monte-Carlo history of an electronics is than large thousands of times of the amount of calculation of γ photon.In order to reduce amount of calculation, the history of charged particle reasonably must be compressed, we have taked Berger compression histories method for this reason.Its basic thought is exactly that a real random walk is physically divided into some steps, and each step comprises a large amount of true collisions, that is to say that the true collision of a several times merges into primary collision and process.The energy of each step and the transition probability of heading are provided by multiple-scattering theory.Conventional have Moliere multiple-scattering theory and a Goudmsit-Saudon multiple-scattering theory.We simulate electronics by these two kinds of theories, Moliere is simple compared with the theoretical calculating of Goudsmit-Saudon, but element to low-energy electron and high atomic number, Moliere is coarse, for ensureing the precision of the calculated results, we adopt Goudsmit-Saudon theory.
Computation model is as shown in Figure 1: set the plane electronics source vertical incidence of energy to the plate material of variety classes, thickness.Program is followed the tracks of incident electron and the interaction process of material and the transmitted electron of generation, scattered electron, secondary electron and photon.Establish a statistics plane at material lower plane, statistics passes electronics and the number of photons of material lower plane.Incident electron is counted unification and is made as I
0=10
8individual electronics, the electron number that material lower plane transmits is IT, electronic transmission coefficient T=I
t/ I
0=I
t× 10
-8.Can also calculate simultaneously, the number of photons of statistical material lower surface outgoing, the atomic nucleus of electronics and shielding material interacts, generation bremsstrahlung photon.Meanwhile, material atom be ionized, radiation photon when transition.Add up outgoing photon, provide the relation of number of photons and material thickness.The number of photons providing is counted I with incident electron
0=10
8normalizing, provides the number of photons P that electronics of every incident produces at material exit facet.
The energy range of space orbit radiation environment electron Spectrum is at 0.4～7MeV, and we have calculated, and energy point is respectively 1,2,2.5,3,3.5, the dosage depth distribution curve of 4MeV to aluminium, tungsten.The above energy electron aluminum of 2MeV is thick in each layer of sedimentary energy of 3mm is very little and reach unanimity, and shield effectiveness is poor, as shown in Figure 2; There is energy deposition peak value in high atomic number material tungsten, the also difference of peak value corresponding to electron beam of different-energy, is shown in Fig. 3.
2, the transmission coefficient of Measurement of Electron Beam in homogenous material
At the ELV-8 of Xibei Nuclear Techn Inst type electron accelerator (the highest accelerating voltage 2MV, maximum output current 40mA) above Al, Ta and Kovar material are carried out to irradiation, radiation mode adopts static accelerator automatically to control dosage, and irradiation cumulative dose is 1 × 10
7rad (Si).The energy of determining as requested irradiated electrons is 1.5MeV, the stable output of accelerator line 0.3mA, and getting irradiation parameters is 85mAS.By on all heat absorption targets that are placed on 20 centimeters under electronics extraction window by irradiation material, adopt the fragrant radiation colour developing of the blue celo of FWT-60 measured thin film electron dose, put three films every layer material is forward and backward, after radiation, adopt its optical absorption spectra data of spectrophotometer measurement, obtain the absorbed dose of each dosage sheet, finally obtain the transmission coefficient of material.The method of measurement of electron beam transmission coefficient in different materials as shown in Figure 4.
3, calculate the electronic transmission coefficient of different-energy electron beam incident individual layer composite material
The measurement result of the result of calculation of step 1 and step 2 is compared, the results are shown in Figure 5, Fig. 6 and Fig. 7.Can find out, theoretical and experimental data meets fine.Can find out, low Z materials, as Ta, has good shielding action to electronics, is 1.5MeV electronics to energy, thickness 0.2mm, the order of magnitude of can decaying, and Al material require 2mm.Therefore, no matter consider from volume or weight, all should adopt high
Z material.Low Z materials, if tungsten, tantalum are the materials of best shielding primary electron, but considers from practicable design, these materials are all conductors, are unfavorable for special construction device to seal.Composite material had both arrived the effect of shielding, can insulate again, can directly encapsulate device.
According to the comparison of analog computation and experimental measurement result, corrected Calculation model repeatedly, calculates the dosage depth distribution curve of different-energy electron beam incident composite material, and result of calculation shows that composite material has also reached good shield effectiveness, sees Fig. 8.
4, make single layer structure composite material
Selecting different metal dusts to add in leaded 10% resin and solidify, is required various composite materials through die forming.In manufacturing process, the content of adjusting various metal dusts is identical to ensure the surface density of various composite materials, and metal dust is Al, Ta or Kovar (kovar alloy), the 0.1%-0.8% that its content range is weight resin.
5, make layer composite material
Single layer structure composite material is combined, be made into the composite material of double-deck and sandwich structure, the double-deck Al/Ta that is combined as combines, and the Al/Ta/Kovar that is combined as of sandwich structure combines.Because the surface density of various composite materials is identical, in the time making layer composite material, the thickness mean allocation of each layer.
6, the transmission coefficient of Measurement of Electron Beam in composite material
At the ELV-8 of Xibei Nuclear Techn Inst type electron accelerator (the highest accelerating voltage 2MV, maximum output current 40mA) above the composite material of individual layer, bilayer and sandwich structure is carried out to irradiation, radiation mode adopts static accelerator automatically to control dosage, and irradiation cumulative dose is 1 × 10
7rad (Si).The energy of determining as requested irradiated electrons is 1.5MeV, the stable output of accelerator line 0.3mA, and getting irradiation parameters is 85mAS.By on all heat absorption targets that are placed on 20 centimeters under electronics extraction window by irradiation material, adopt the fragrant radiation colour developing of the blue celo of FWT-60 measured thin film electron dose, put three films every layer material is forward and backward, after radiation, adopt its optical absorption spectra data of spectrophotometer measurement, obtain the absorbed dose of each dosage sheet, finally obtain the transmission coefficient of material.
7, compare the result of the test of single layer structure composite material and layer composite material, determine the composite construction that shield effectiveness is best, carry out secondary encapsulation at the respective chip place of device, can improve device ionizing radiation-resistant total dose effect.
Claims (3)
1. a method that improves device ionizing radiation-resistant total dose effect, is characterized in that: comprise the following steps:
1) make single layer structure composite material:
Selecting different metal dusts to add in leaded 10% resin solidifies, wherein plumbous content is weight resin 10%, is various composite materials through die forming, and described metal dust is Al, Ta or Kovar, its content range is the 0.1%-0.8% of weight resin
2) make layer composite material:
Single layer structure composite material is combined, be made into the composite material of double-deck and sandwich structure, the described double-deck Al/Ta combination that is combined as, the Al/Ta/Kovar that is combined as of described sandwich structure combines;
3) transmission coefficient of Measurement of Electron Beam in composite material:
After the composite material of the electron beam that electron accelerator produces through double-deck and sandwich structure, received by the Faraday cup under vacuum environment, the electric current producing is sent into line integrator after shielded cable, thereby obtains the measurement transmission coefficient of this composite material;
4) the theoretical transmission coefficient of employing Monte-Carlo particle transportation method analog computation material:
Adopt the analog computation of Monte-Carlo particle transportation method, each calculating followed the tracks of 200,000 particles, the simulation principle of taking photon after first electronics, all secondary processes of the secondary photon to electronics and generation and secondary electron all carry out simulation tracing, until that all particles is followed the tracks of is complete;
5), according to the comparison of analog computation and experimental measurement result, corrected Calculation model repeatedly, calculates the electronic transmission coefficient of different-energy electron beam incident single layer structure composite material and double-deck and sandwich structure composite material;
6) electronic transmission coefficient of comparison single layer structure composite material and layer composite material, determines the composite material that shield effectiveness is best, carries out secondary encapsulation at the respective chip place of device, can improve device ionizing radiation-resistant total dose effect.
2. the method for raising device ionizing radiation-resistant total dose effect according to claim 1, is characterized in that:
In the composite material manufacturing process of step 1, the content of adjusting various metal dusts is identical to ensure the surface density of various composite materials;
In step 2, each layer thickness mean allocation of the composite material of bilayer and sandwich structure.
3. the method for raising device ionizing radiation-resistant total dose effect according to claim 1 and 2, is characterized in that:
When described step 4 adopts the analog computation of Monte-Carlo particle transportation method, specifically take Berger compression histories method, calculate by Moliere multiple-scattering theory and Goudmsit-Saudon multiple-scattering theory.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104459372A (en) * | 2014-11-10 | 2015-03-25 | 中国科学院新疆理化技术研究所 | Displacement damage dosage detection method based on p-i-n structure |
| CN106645991A (en) * | 2016-12-13 | 2017-05-10 | 上海卫星工程研究所 | Electron radiation test device and method of space-borne ultra-light alloy material |
| CN113552402A (en) * | 2021-07-09 | 2021-10-26 | 清华大学 | Device for measuring coupling current |
| CN113673095A (en) * | 2021-08-06 | 2021-11-19 | 淮安市疾病预防控制中心 | Method for simulating bremsstrahlung transmission factor of wide-beam X-ray |
| CN114613454A (en) * | 2022-02-25 | 2022-06-10 | 西北核技术研究所 | Design method of charged particle balance body of thermoluminescent dosimeter |
| WO2022203639A3 (en) * | 2021-03-25 | 2022-11-17 | Ihsan Dogramaci Bilkent Universitesi | Multi-layer composite panel composed of organic/inorganic materials and providing thermal insulation and protection against ionizing radiation |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101752420A (en) * | 2009-12-15 | 2010-06-23 | 北京时代民芯科技有限公司 | Total dose radiation hardening I-shaped gate layout structure |
| WO2011051299A2 (en) * | 2009-10-26 | 2011-05-05 | Finphys Oy | Detector, method for manufacturing a detector and imaging apparatus |
| CN102361023A (en) * | 2011-10-20 | 2012-02-22 | 中国电子科技集团公司第十三研究所 | Ceramic shell capable of enhancing radiation shielding and preparation method thereof |
| CN102709288A (en) * | 2012-05-18 | 2012-10-03 | 电子科技大学 | Semiconductor storage with reinforced total dose radiation |
| CN103456719A (en) * | 2012-06-01 | 2013-12-18 | 上海航天设备制造总厂 | Electronic device radiation-resistant reinforcing packaging structure |
-
2014
- 2014-05-22 CN CN201410220512.9A patent/CN103996673B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011051299A2 (en) * | 2009-10-26 | 2011-05-05 | Finphys Oy | Detector, method for manufacturing a detector and imaging apparatus |
| CN101752420A (en) * | 2009-12-15 | 2010-06-23 | 北京时代民芯科技有限公司 | Total dose radiation hardening I-shaped gate layout structure |
| CN102361023A (en) * | 2011-10-20 | 2012-02-22 | 中国电子科技集团公司第十三研究所 | Ceramic shell capable of enhancing radiation shielding and preparation method thereof |
| CN102709288A (en) * | 2012-05-18 | 2012-10-03 | 电子科技大学 | Semiconductor storage with reinforced total dose radiation |
| CN103456719A (en) * | 2012-06-01 | 2013-12-18 | 上海航天设备制造总厂 | Electronic device radiation-resistant reinforcing packaging structure |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104459372A (en) * | 2014-11-10 | 2015-03-25 | 中国科学院新疆理化技术研究所 | Displacement damage dosage detection method based on p-i-n structure |
| CN104459372B (en) * | 2014-11-10 | 2017-09-01 | 中国科学院新疆理化技术研究所 | Displacement damage dose detecting method based on p i n structures |
| CN106645991A (en) * | 2016-12-13 | 2017-05-10 | 上海卫星工程研究所 | Electron radiation test device and method of space-borne ultra-light alloy material |
| CN106645991B (en) * | 2016-12-13 | 2019-02-15 | 上海卫星工程研究所 | A kind of the electron radiation experimental rig and method of spaceborne ultra-light alloy material |
| WO2022203639A3 (en) * | 2021-03-25 | 2022-11-17 | Ihsan Dogramaci Bilkent Universitesi | Multi-layer composite panel composed of organic/inorganic materials and providing thermal insulation and protection against ionizing radiation |
| CN113552402A (en) * | 2021-07-09 | 2021-10-26 | 清华大学 | Device for measuring coupling current |
| CN113673095A (en) * | 2021-08-06 | 2021-11-19 | 淮安市疾病预防控制中心 | Method for simulating bremsstrahlung transmission factor of wide-beam X-ray |
| CN113673095B (en) * | 2021-08-06 | 2024-04-30 | 淮安市疾病预防控制中心 | Method for simulating wide-beam X-ray bremsstrahlung transmission factor |
| CN114613454A (en) * | 2022-02-25 | 2022-06-10 | 西北核技术研究所 | Design method of charged particle balance body of thermoluminescent dosimeter |
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