CN106124953B - Single particle effect prediction technique and device - Google Patents
Single particle effect prediction technique and device Download PDFInfo
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- CN106124953B CN106124953B CN201610415499.1A CN201610415499A CN106124953B CN 106124953 B CN106124953 B CN 106124953B CN 201610415499 A CN201610415499 A CN 201610415499A CN 106124953 B CN106124953 B CN 106124953B
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
- G01R31/2603—Apparatus or methods therefor for curve tracing of semiconductor characteristics, e.g. on oscilloscope
Abstract
The present invention relates to a kind of single particle effect prediction technique and devices, the single particle effect prediction technique is by obtaining no less than five single particle effect sections~ion LET Value Data point of the device to be detected under heavy ion irradiation, Weibull function curve is carried out to single particle effect section~ion LET Value Data point to be fitted to obtain Weibull curve, by Weibull curve ladder, and the sensitive volume parameter of each sensitive volume is calculated, collect the critical charge of the factor and sensing unit, according to the sensitive volume parameter of all sensitive volumes of sensing unit, it collects the factor and sedimentary energy calculates the collection charge of sensing unit；When collecting charge more than or equal to critical charge, predict that single particle effect occurs for device to be detected.The sensitive section model that this method obtains includes at least one sensitive volume, each sensitive volume considers the sensitivity differences inside single sensing unit, thus using the sensitive section model can accurately predict device to be detected whether it is corresponding experiment and application environment in single particle effect occurs.
Description
Technical field
The present invention relates to electronic technology fields, more particularly to a kind of single particle effect prediction technique and device.
Background technique
Single particle effect (Single Event Effects, SEE) refer to certain energy single particle (including weight from
Son, proton, neutron etc.) effect that generates in the semiconductor device, including single-particle inversion, Multiple-bit upsets, locking single particle, list
Particle hard error, single event function interrupt, single event burnout, single event gate rupture, single event transient pulse etc..Spacecraft fortune
Row in severe natural radiation environment, galactic cosmic rays, solar cosmic ray and earth's magnetic field capture band in high energy proton,
The single particle effect that α particle and heavy ion generate in space electronics system seriously threatens the safe operation of spacecraft.According to beauty
National geophysics data center of state statistics, between 1971 to 1986, by various in 39 synchronous satellites of U.S.'s transmitting
Failure sum caused by reason totally 1589 times, wherein the failure caused by single-particle inversion (Single Event Upset, SEU)
Up to 621 times, the 39% of failure sum is accounted for.China's Space scientific and technical research institute has counted the failure in 6, China synchronous satellite
Reason, ratio of the failure in total failare caused by space radiation environment have reached 40%.US National Aeronautics and Space Administration
The Marshall space flight center (National Aeronautics and Space Administration, NASA)
Satellite caused by more than 100 space environments is anomaly divided into seven greatly by (Marshall Space Flight Center, MSFC)
Class, respectively plasma, radiation, space junk and meteoric body, atmosphere, the sun, heat and earth's magnetic field.2011, country of France
Center For Space Research uses the classification method of NASA MSFC, and according to physics cause, by dividing anomaly caused by the sun enter etc. from
Daughter, radiation or earth magnetism scope, according to classification, radiation effect is proportion the main reason for causing aircraft operation irregularity
Reach 45%.Further radiation effect is classified, the ratio that various radiation effects cause spacecraft extremely shared is carried out
Analysis is degenerated compared to total dose effect and solar panel, and single particle effect is most important abnormal cause, and proportion reaches
To 86%.Therefore, single particle effect has become the bottleneck problem for restricting modern advanced electronic component AEROSPACE APPLICATION.
As single particle effect prediction model in space most widely used in current industry, cube/integral cube
(Rectangular ParallelePiped/Integral Rectangular ParallelePiped, RPP/IRPP) model
Nearly success in 30 years is achieved, validity is also confirmed by the in-orbit data of many years.RPP/IRPP model is according to ground weight
Single particle effect section~ion LET value relation curve that ion experiments obtain obtains electronic device single particle effect sensitive volume
Parameters, such as surface area and critical charge, and then combine specific track radiation environment, the in-orbit mistake of device be calculated
Rate.
But RPP/IRPP model approximatively think the sensibility inside sensing unit be it is the same, i.e., do not consider single
Single particle effect sensitivity differences inside sensing unit.In fact, field distribution, charge-trapping inside single sensing unit
Efficiency, charge-trapping mechanism etc. are different, and also exactly such difference leads to single particle effect section~ion LET value relationship
Curve is not a step function.Therefore, this method prediction single particle effect result of device and inaccurate is utilized.
Summary of the invention
Based on this, it is necessary to establish the prediction technique and device that can accurately predict electronic device single particle effect.
A kind of single particle effect prediction technique, comprising:
Obtain no less than five single particle effect sections~ion LET Value Data of the device to be detected under heavy ion irradiation
Point；
Weibull function curve is carried out to the single particle effect section~ion LET Value Data point to be fitted to obtain
Weibull curve；
By the Weibull curve ladder；
The sensitive volume mould that the device to be detected corresponds to sensing unit is obtained according to the Weibull curve of ladder
Type, the sensitive section model include at least one sensitive volume, the Weibull order of a curve ladder of the sensitive volume and ladder
It is corresponding；
The sensitive volume parameter of the sensitive volume, the collection factor of the sensitive volume and particle are obtained in the heavy of the sensitive volume
The critical charge of product energy and the sensing unit；
According to the sensitive volume parameter, the collection factor and the Energy Deposition of all sensitive volumes of the sensing unit
Amount calculates the collection charge of the sensing unit；
When the collection charge is greater than or equal to the critical charge, predict that single-particle effect occurs for the device to be detected
It answers.
A kind of single particle effect prediction meanss, comprising:
Obtain module, for obtain device to be detected under heavy ion irradiation no less than five single particle effect sections~
Ion LET Value Data point；
Curve fitting module, for carrying out Weibull function to the single particle effect section~ion LET Value Data point
Curve matching obtains Weibull curve；
Ladder module is used for the Weibull curve ladder；
Sensitive section model generation module, for obtaining the device to be detected according to the Weibull curve of ladder
The sensitive section model of corresponding sensing unit, the sensitive section model include at least one sensitive volume, the sensitive volume and ladder
The Weibull order of a curve ladder it is corresponding；
Parameter acquisition module, for obtaining the sensitive volume parameter, the collection factor of the sensitive volume and grain of the sensitive volume
Son is in the sedimentary energy of the sensitive volume and the critical charge of the sensing unit；
Charge computing module is collected, for the sensitive volume parameter according to all sensitive volumes of the sensing unit, institute
It states the collection factor and the sedimentary energy calculates the collection charge of the sensing unit；
Prediction module, for predicting the device to be detected when the collection charge is greater than or equal to the critical charge
Single particle effect occurs for part.
Above-mentioned single particle effect prediction technique and device, it is multiple under heavy ion irradiation by obtaining device to be detected
Single particle effect section~ion LET Value Data point carries out the single particle effect section~ion LET Value Data point
Weibull function curve is fitted to obtain Weibull curve, by the Weibull curve ladder, and is calculated each sensitive
The sensitive volume parameter in area, the critical charge for collecting the factor and sensing unit, according to all sensitive volumes of the sensing unit
Sensitive volume parameter, the collection factor and the sedimentary energy calculate the collection charge of the sensing unit；When the collection charge is big
When the critical charge, predict that single particle effect occurs for the device to be detected.This method easily using weight from
Multiple single particle effect sections~ion LET value that son experiment obtains, and carry out Weibull function curve and be fitted to obtain
The sensitive section model obtained after Weibull curve ladder is included at least one sensitive volume by Weibull curve, sensitive volume with
The Weibull order of a curve ladder of ladder is corresponding, each sensitive volume considers the sensitivity differences inside single sensing unit,
Whether more fitting is practical, to can accurately predict device to be detected in corresponding experiment and using ring using the sensitive section model
Single particle effect occurs in border.
Detailed description of the invention
Fig. 1 is the flow chart of the single particle effect prediction technique in one embodiment；
Fig. 2 is a kind of Weibull curve ladder schematic diagram of embodiment；
Fig. 3 is sensitive section model corresponding with the Weibull curve of the ladder of Fig. 2；
Fig. 4 is the cross-sectional view of the sensitive section model of Fig. 3；
Fig. 5 is the functional block diagram of the single particle effect prediction meanss in one embodiment.
Specific embodiment
As shown in Figure 1, a kind of single particle effect prediction technique, comprising the following steps:
S102: no less than five single particle effect section~ion LETs of the device to be detected under heavy ion irradiation are obtained
Value Data point.
Device to be detected is exposed under heavy ion irradiation environment, the radiation ring used for simulating device to be detected
Border, for example, the space radiation environment of spacecraft.It, can by the way that device to be detected to be exposed under heavy ion irradiation environment
Obtain multiple single particle effect sections~ion LET Value Data point of the device to be detected under radiation environment.
S104: Weibull function curve is carried out to single particle effect section~ion LET Value Data point and is fitted to obtain
Weibull curve.
A kind of Weibull function of embodiment is as follows:
σ (LET)=σsat(1-exp{-[(LET-LETth)/W]S})
Wherein, σ (LET) is single particle effect section, σsatTo be saturated section, LETthFor LET threshold value, W and S are fitting ginseng
Number.
S106: by Weibull curve ladder.
Ladder processing, in one embodiment, root are carried out to Weibull curve according to device characteristics and computational accuracy
According to slope of a curve by Weibull curve ladder, in another embodiment, rule of thumb combined by staff to be checked
It surveys device feature and computational accuracy and ladder processing, obtained Weibull curve ladder schematic diagram is carried out to Weibull curve
As shown in Fig. 2, in this embodiment, the Weibull curve after ladder has 4 ladders.In other embodiments,
Ladder quantity after Weibull curve ladder is more than or equal to 1.
S108: obtaining the sensitive section model that device to be detected corresponds to sensing unit according to the Weibull curve of ladder, spirit
Quick section model includes at least one sensitive volume, and sensitive volume is corresponding with the Weibull order of a curve ladder of ladder.
Sensitive section model includes at least one sensitive volume, and sensitive volume is corresponding with the Weibull order of a curve ladder of ladder.Tool
Body, sensitive volume is generated according to corresponding Weibull order of a curve ladder, also, the Weibull of the quantity of sensitive volume and ladder
Order of a curve ladder quantity is identical.In a kind of embodiment, sensitive volume corresponding with the Weibull curve of ladder shown in Fig. 2
Model is as shown in figure 3, the sensing unit includes four nested sensitive volumes, wherein j-th of sensitive volume is by+1 sensitive volume of jth
It surrounds.
S110: the sensitive volume parameter of sensitive volume, the collection factor of sensitive volume and particle are obtained in the sedimentary energy of sensitive volume
And the critical charge of sensing unit.
Sensitive volume parameter includes the length of sensitive volume, width and thickness etc..
S112: it is calculated according to the sensitive volume parameter of all sensitive volumes of sensing unit, the collection factor and sedimentary energy sensitive
The collection charge of unit.
S114: when collecting charge more than or equal to critical charge, predict that single particle effect occurs for device to be detected.
Specifically, the collection charge of sensing unit is compared with critical charge, face when collection charge is greater than or equal to
When boundary's charge, predict that single particle effect can occur in the simulated environment for device to be detected.
Above-mentioned single particle effect prediction technique, by obtaining multiple single-particles of the device to be detected under heavy ion irradiation
Effect section~ion LET Value Data point carries out Weibull letter to the single particle effect section~ion LET Value Data point
Curve fit obtains Weibull curve, by the Weibull curve ladder, and the sensitive of each sensitive volume is calculated
Area's parameter, the critical charge for collecting the factor and sensing unit, join according to the sensitive volume of all sensitive volumes of the sensing unit
Number, the collection factor and the sedimentary energy calculate the collection charge of the sensing unit；When the collection charge is greater than or equal to
When the critical charge, predict that single particle effect occurs for the device to be detected.This method easily uses heavy ion to test
The multiple single particle effect sections~ion LET value arrived, and carry out Weibull function curve and be fitted to obtain Weibull curve, it will
The sensitive section model obtained after Weibull curve ladder includes at least one sensitive volume, the Weibull of sensitive volume and ladder
Order of a curve ladder is corresponding, each sensitive volume considers the sensitivity differences inside single sensing unit, and more fitting is practical, thus
Using the sensitive section model can accurately predict device to be detected whether it is corresponding experiment and application environment in single-particle occurs
Effect.
In one embodiment, step S110 includes:
S1101: corresponding sensitive volume ginseng is calculated according to single particle effect section~ion LET value that sensitive volume corresponds to ladder
Number collects the factor and critical charge.
Since sensitive volume is corresponding with ladder, is calculated and corresponded to according to single particle effect section~ion LET value of corresponding ladder
Sensitive volume parameter collects the factor and critical charge.
S1102: particle is obtained in the sedimentary energy of sensitive volume.
Specifically, sensitive volume parameter includes the length of sensitive volume, width and thickness.For electronic component to be detected
Speech, the length and width of the sensitive volume of same sensing unit be it is identical, in a kind of embodiment, the length and width of sensitive volume
For the square root in the corresponding single particle effect section of corresponding ladder.However, the electronic component of some types, same sensing unit
Sensitive volume thickness it is identical, such as advanced SOI (Silicon-On-Insulator, the silicon in insulating substrate) device.Part
The thickness of the electronic component of type, the sensitive volume of same sensing unit is not identical, for example, body silicon device.
There are two parameter, σ for each ladder of Weibull curve after ladderi,jAnd LETi,j, wherein σi,jIt is flat for ladder
The corresponding single particle effect section of platform, LETi,jRefer to the corresponding LET value in ladder beginning, LETthFor LET threshold value.
Sensing unit identical for the thickness of each sensitive volume, if:
LETi,1=LETth,
αi,1=1,
The calculation formula of the length and width of sensitive volume, the calculation formula of the collection factor and critical charge then can be obtained
Calculation formula.
Wherein, the calculation formula of the length and width of sensitive volume are as follows:
Wherein, dxi,jFor the length of j-th of sensitive volume of i-th of sensing unit；dyi,jFor the jth of i-th of sensing unit
The width of a sensitive volume；σi,jFor the corresponding single particle effect of the corresponding ladder platform in j-th of sensitive volume of i-th of sensing unit
Section.
Collect the calculation formula of the factor are as follows:
Wherein, LETthFor LET threshold value, i represents i-th of sensing unit, and j represents j-th of sensitive volume, αi,jIt is sensitive for i-th
The collection factor of j-th of sensitive volume of unit；LETi,jFor the corresponding ladder beginning in j-th of sensitive volume of i-th of sensing unit
Corresponding LET value.
In general, length and width and saturation section σ in outermost sensitive volume parametersatIt is corresponding, with shown in Fig. 3
For sensitive section model,
Wherein, dxNiFor the length of outermost layer sensitive volume in sensitive section model, dyNiOutermost layer sensitive volume in sensitive section model
Width.
The calculation formula of critical charge are as follows:
Wherein, QcFor critical charge, LETthFor LET threshold value, ρSiFor the silicon materials density of device to be detected, dz is sensitive volume
Thickness, I (Z) be device material to be detected ionization potential energy, the silicon materials value be 3.6eV/ electron-hole pair.This embodiment party
In formula, the thickness of the sensitive volume of same sensing unit is identical, the thickness of device depletion region specially to be detected or the thickness of trap, by
User is determined according to the structure of device to be detected.
Sensing unit different for the thickness of each sensitive volume, by taking sensitive section model shown in Fig. 3 as an example, cross section
As shown in figure 4, the thickness of peripheral sensitive volume generally should be greater than the thickness of embedded sensitive volume.Length and width in the parameter of sensitive volume
The calculation method of degree is identical as the calculation method of length and width of the identical sensitive volume of thickness of each sensitive volume of front, herein
It repeats no more.The thickness of sensitive volume is according to the structure determination of device to be detected, specifically by user according to the knot of device to be detected
Structure and experience are chosen.
Ladder parameter according to fig. 2, can obtain:
Wherein, αi,jFor the collection factor of j-th of sensitive volume of i-th of sensing unit, dzi,jFor i-th sensing unit
The thickness of j-th of sensitive volume；QcFor critical charge, Ni is the quantity of the sensitive volume of i-th of sensing unit；LETthFor LET threshold value,
ρSiFor the silicon materials density of device to be detected, I (Z) is the ionization potential energy of device material to be detected, LETi,jFor i-th of sensitive list
The corresponding LET value in the corresponding ladder beginning in j-th of sensitive volume of member.Shared NiA equation, unknown number QcAnd αi,j(wherein,
αi,1It is 1, is datum), the total N of unknown numberiIt is a, it can solve and obtain critical charge QcWith collection factor-alphai,j。
In another embodiment, step S112 is specifically, be calculated using the following equation the collection for obtaining sensing unit
Charge:
Wherein, QiFor the collection charge of sensing unit；I (Z) be device material to be detected ionization potential energy, i-th of Ni
The quantity of the sensitive volume of sensing unit；I represents i-th of sensing unit, and j represents j-th of sensitive volume, αi,jFor i-th of sensing unit
J-th of sensitive volume the collection factor, Ei,jFor the sedimentary energy of j-th of sensitive volume of i-th of sensing unit.
In one embodiment, as shown in figure 5, providing a kind of single particle effect prediction meanss, comprising:
Module 102 is obtained, is cut for obtaining no less than five single particle effects of the device to be detected under heavy ion irradiation
Face~ion LET Value Data point.
Curve fitting module 104, for carrying out Weibull function to single particle effect section~ion LET Value Data point
Curve matching obtains Weibull curve.
Ladder module 106 is used for Weibull curve ladder.
Sensitive section model generation module 108 obtains the corresponding spirit of device to be detected for the Weibull curve according to ladder
The sensitive section model of quick unit, sensitive section model include at least one sensitive volume, sensitive volume and the Weibull curve of ladder
Ladder is corresponding.
Parameter acquisition module 110, for obtaining the sensitive volume parameter, the collection factor of sensitive volume and particle of sensitive volume in spirit
The sedimentary energy in quick area and the critical charge of sensing unit.
Collect charge computing module 112, for according to the sensitive volume parameters of all sensitive volumes of sensing unit, collect the factor
The collection charge of sensing unit is calculated with sedimentary energy.
Prediction module 114, for when collecting charge more than or equal to critical charge, predicting that simple grain occurs for device to be detected
Sub- effect.
Above-mentioned single particle effect prediction meanss, by obtaining multiple single-particles of the device to be detected under heavy ion irradiation
It is bent to carry out Weibull function to single particle effect section~ion LET Value Data point for effect section~ion LET Value Data point
Line is fitted to obtain Weibull curve, by Weibull curve ladder, and the sensitive volume parameter of each sensitive volume is calculated, receives
The critical charge for collecting the factor and sensing unit, according to the sensitive volume parameter of all sensitive volumes of sensing unit, collect the factor and
The collection charge of sedimentary energy calculating sensing unit；When collecting charge more than or equal to critical charge, device to be detected is predicted
Single particle effect occurs.Multiple single particle effect sections~ion LET value that the device is easily tested using heavy ion,
And carry out Weibull function curve and be fitted to obtain Weibull curve, the sensitive volume mould that will be obtained after Weibull curve ladder
Type includes at least one sensitive volume, and sensitive volume is corresponding with the Weibull order of a curve ladder of ladder, each sensitive volume considers
Sensitivity differences inside single sensing unit, more fitting are practical, to can accurately be predicted using the sensitive section model to be checked
Survey whether device tests corresponding and single particle effect occurs in application environment.
In one embodiment, parameter acquisition module 110 includes:
Sensitive volume parameter calculating module, for corresponding to single particle effect section~ion LET value of ladder according to sensitive volume
It calculates corresponding sensitive volume parameter, collect the factor and critical charge.
Sedimentary energy obtains module, for obtaining particle in the sedimentary energy of sensitive volume.
In one embodiment, sensitive volume parameter includes the length of sensitive volume, width and thickness, the length and width of sensitive volume
Degree is the square root in the corresponding single particle effect section of corresponding ladder；The thickness of sensitive volume is identical, according to the knot of device to be detected
Structure determines；
Calculate the formula for collecting the factor are as follows:
Wherein, LETthFor LET threshold value, i represents i-th of sensing unit, and j represents j-th of sensitive volume, αi,jIt is sensitive for i-th
The collection factor of j-th of sensitive volume of unit；LETi,jFor the corresponding ladder beginning in j-th of sensitive volume of i-th of sensing unit
Corresponding LET value；
Calculate the formula of critical charge are as follows:
Wherein, QcFor critical charge, ρSiFor the silicon materials density of device to be detected, dz is the thickness of sensitive volume, and I (Z) is
The ionization potential energy of device material to be detected；LETthFor LET threshold value.
In one embodiment, sensitive volume parameter includes the length of sensitive volume, width and thickness, the length and width of sensitive volume
Degree is the square root in the corresponding single particle effect section of corresponding ladder；The thickness of sensitive volume is true according to the structure of device to be detected
It is fixed.
Following equation is solved to obtain collecting the factor and critical charge:
Wherein, αi,jFor the collection factor of j-th of sensitive volume of i-th of sensing unit, dzi,jFor i-th sensing unit
The thickness of j-th of sensitive volume；QcFor critical charge, Ni is the quantity of the sensitive volume of i-th of sensing unit；LETthFor LET threshold value,
ρSiFor the silicon materials density of device to be detected, I (Z) is the ionization potential energy of device material to be detected；LETi,jFor i-th of sensitive list
The corresponding LET value in the corresponding ladder beginning in j-th of sensitive volume of member.
In one embodiment, charge computing module 112 is collected, collection charge is calculated with specific reference to following formula:
Wherein, QiFor the collection charge of sensing unit；I (Z) be device material to be detected ionization potential energy, i-th of Ni
The quantity of the sensitive volume of sensing unit；I represents i-th of sensing unit, and j represents j-th of sensitive volume, αi,jFor i-th of sensing unit
J-th of sensitive volume the collection factor, Ei,jFor the sedimentary energy of j-th of sensitive volume of i-th of sensing unit.
Each technical characteristic of above embodiments can be combined arbitrarily, for simplicity of description, not to above-described embodiment
In each technical characteristic it is all possible combination be all described, as long as however, the combination of these technical characteristics be not present lance
Shield all should be considered as described in this specification.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (10)
1. a kind of single particle effect prediction technique, comprising:
Obtain no less than five single particle effect sections~ion LET Value Data point of the device to be detected under heavy ion irradiation；
Weibull function curve is carried out to the single particle effect section~ion LET Value Data point to be fitted to obtain Weibull song
Line；
By the Weibull curve ladder；
The sensitive section model that the device to be detected corresponds to sensing unit, institute are obtained according to the Weibull curve of ladder
Stating sensitive section model includes at least one sensitive volume, and the sensitive volume is corresponding with the Weibull order of a curve ladder of ladder；
The sensitive volume parameter of the sensitive volume, the collection factor of the sensitive volume and particle are obtained in the Energy Deposition of the sensitive volume
The critical charge of amount and the sensing unit；
According to the sensitive volume parameter, the collection factor and the Energy Deposition meter of all sensitive volumes of the sensing unit
Calculate the collection charge of the sensing unit；
When the collection charge is greater than or equal to the critical charge, predict that single particle effect occurs for the device to be detected.
2. single particle effect prediction technique according to claim 1, which is characterized in that the spirit for obtaining the sensitive volume
Quick area's parameter, the collection factor of the sensitive volume and particle are in the sedimentary energy of the sensitive volume and facing for the sensing unit
The step of boundary's charge includes:
According to the sensitive volume correspond to the single particle effect section of ladder~ion LET value calculate the corresponding sensitive volume parameter,
Collect the factor and critical charge；
Particle is obtained in the sedimentary energy of the sensitive volume.
3. single particle effect prediction technique according to claim 2, which is characterized in that the sensitive volume parameter includes sensitive
Length, the width and thickness in area, the length and width of the sensitive volume are the flat of the corresponding single particle effect section of corresponding ladder
Root；The thickness of the sensitive volume is identical, according to the structure determination of device to be detected；
Calculate the formula for collecting the factor are as follows:
Wherein, LETthFor LET threshold value, i represents i-th of sensing unit, and j represents j-th of sensitive volume, αi,jFor i-th of sensing unit
J-th of sensitive volume the collection factor；LETi,jIt is corresponding for the corresponding ladder beginning in j-th of sensitive volume of i-th of sensing unit
LET value；
Calculate the formula of the critical charge are as follows:
Wherein, QcFor critical charge, ρSiFor the silicon materials density of device to be detected, dz is the thickness of sensitive volume, and I (Z) is to be checked
Survey the ionization potential energy of device material；LETthFor LET threshold value.
4. single particle effect prediction technique according to claim 2, which is characterized in that the sensitive volume parameter includes sensitive
Length, the width and thickness in area, the length and width of the sensitive volume are the flat of the corresponding single particle effect section of corresponding ladder
Root；The thickness of the sensitive volume is according to the structure determination of device to be detected；
It solves following equation and obtains the collection factor and critical charge:
……
……
Wherein, αi,jFor the collection factor of j-th of sensitive volume of i-th of sensing unit, dzi,jIt is j-th of i-th of sensing unit
The thickness of sensitive volume；QcFor critical charge, NiFor the quantity of the sensitive volume of i-th of sensing unit；LETthFor LET threshold value, ρSiFor
The silicon materials density of device to be detected, I (Z) are the ionization potential energy of device material to be detected；LETi,jFor i-th sensing unit
The corresponding LET value in the corresponding ladder beginning in j-th of sensitive volume.
5. single particle effect prediction technique according to claim 1, which is characterized in that described according to the sensing unit
Sensitive volume parameter, the collection factor and the sedimentary energy of all sensitive volumes calculate the collection charge of the sensing unit, specifically
Are as follows:
Wherein, QiFor the collection charge of sensing unit；I (Z) is the ionization potential energy of device material to be detected, NiFor i-th of sensitive list
The quantity of the sensitive volume of member；I represents i-th of sensing unit, and j represents j-th of sensitive volume, αi,jFor the jth of i-th of sensing unit
The collection factor of a sensitive volume, Ei,jFor the sedimentary energy of j-th of sensitive volume of i-th of sensing unit.
6. a kind of single particle effect prediction meanss, comprising:
Module is obtained, for obtaining no less than five single particle effect section~ions of the device to be detected under heavy ion irradiation
LET Value Data point；
Curve fitting module, for carrying out Weibull function curve to the single particle effect section~ion LET Value Data point
Fitting obtains Weibull curve；
Ladder module is used for the Weibull curve ladder；
It is corresponding to obtain the device to be detected for the Weibull curve according to ladder for sensitive section model generation module
The sensitive section model of sensing unit, the sensitive section model include at least one sensitive volume, the institute of the sensitive volume and ladder
It is corresponding to state Weibull order of a curve ladder；
Parameter acquisition module, sensitive volume parameter, the collection factor of the sensitive volume and particle for obtaining the sensitive volume exist
The critical charge of the sedimentary energy of the sensitive volume and the sensing unit；
Charge computing module is collected, for the sensitive volume parameter, the receipts according to all sensitive volumes of the sensing unit
The collection factor and the sedimentary energy calculate the collection charge of the sensing unit；
Prediction module, for when the collection charge is greater than or equal to the critical charge, predicting the device hair to be detected
Raw single particle effect.
7. single particle effect prediction meanss according to claim 6, which is characterized in that the parameter acquisition module includes:
Sensitive volume parameter calculating module, for corresponding to single particle effect section~ion LET value of ladder according to the sensitive volume
It calculates the corresponding sensitive volume parameter, collect the factor and critical charge；
Sedimentary energy obtains module, for obtaining particle in the sedimentary energy of the sensitive volume.
8. single particle effect prediction meanss according to claim 7, which is characterized in that the sensitive volume parameter includes sensitive
Length, the width and thickness in area, the length and width of the sensitive volume are the flat of the corresponding single particle effect section of corresponding ladder
Root；The thickness of the sensitive volume is identical, according to the structure determination of device to be detected；
Calculate the formula for collecting the factor are as follows:
Wherein, LETthFor LET threshold value, i represents i-th of sensing unit, and j represents j-th of sensitive volume, αi,jFor i-th of sensing unit
J-th of sensitive volume the collection factor；LETi,jIt is corresponding for the corresponding ladder beginning in j-th of sensitive volume of i-th of sensing unit
LET value；
Calculate the formula of the critical charge are as follows:
Wherein, QcFor critical charge, ρSiFor the silicon materials density of device to be detected, dz is the thickness of sensitive volume, and I (Z) is to be checked
Survey the ionization potential energy of device material；LETthFor LET threshold value.
9. single particle effect prediction meanss according to claim 7, which is characterized in that the sensitive volume parameter includes sensitive
Length, the width and thickness in area, the length and width of the sensitive volume are the flat of the corresponding single particle effect section of corresponding ladder
Root；The thickness of the sensitive volume is according to the structure determination of device to be detected；
It solves following equation and obtains the collection factor and critical charge:
……
……
Wherein, αi,jFor the collection factor of j-th of sensitive volume of i-th of sensing unit, dzi,jIt is j-th of i-th of sensing unit
The thickness of sensitive volume；QcFor critical charge, NiFor the quantity of the sensitive volume of i-th of sensing unit；LETthFor LET threshold value, ρSiFor
The silicon materials density of device to be detected, I (Z) are the ionization potential energy of device material to be detected；LETi,jFor i-th sensing unit
The corresponding LET value in the corresponding ladder beginning in j-th of sensitive volume.
10. single particle effect prediction meanss according to claim 6, which is characterized in that the collection charge computing module,
The collection charge is calculated with specific reference to following formula:
Wherein, QiFor the collection charge of sensing unit；I (Z) is the ionization potential energy of device material to be detected, NiFor i-th of sensitive list
The quantity of the sensitive volume of member；I represents i-th of sensing unit, and j represents j-th of sensitive volume, αi,jFor the jth of i-th of sensing unit
The collection factor of a sensitive volume, Ei,jFor the sedimentary energy of j-th of sensitive volume of i-th of sensing unit.
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| CN108008289B (en) * | 2017-11-22 | 2019-12-27 | 西北核技术研究所 | Method for obtaining device proton single event effect cross section |
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| CN112230081B (en) * | 2020-09-17 | 2023-08-25 | 兰州空间技术物理研究所 | Equivalent LET calculation method for pulse laser single event effect test |
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