CN108008289B - Method for obtaining device proton single event effect cross section - Google Patents

Method for obtaining device proton single event effect cross section Download PDF

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CN108008289B
CN108008289B CN201711173677.5A CN201711173677A CN108008289B CN 108008289 B CN108008289 B CN 108008289B CN 201711173677 A CN201711173677 A CN 201711173677A CN 108008289 B CN108008289 B CN 108008289B
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single event
event effect
section
proton
heavy ion
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CN108008289A (en
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罗尹虹
郭红霞
张凤祁
陈伟
潘霄宇
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Northwest Institute of Nuclear Technology
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2832—Specific tests of electronic circuits not provided for elsewhere
    • G01R31/2836—Fault-finding or characterising
    • G01R31/2849—Environmental or reliability testing, e.g. burn-in or validation tests
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/34—Measuring cross-section, e.g. absorption cross-section of particles

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Abstract

The invention discloses a method for obtaining a proton single event effect section of a device, which comprises the following steps: performing a heavy ion single event effect experiment on the device to obtain heavy ion single event effect section experiment data; fitting the experimental data by using a Weibull function to obtain a fitted heavy ion single event effect cross-section function; constructing a device structure comprising a plurality of metal wiring layers, and calculating the nuclear reaction of protons with energy E and a material by utilizing Monte Carlo particle transport simulation to generate the probability p of secondary particles with LET L (E) at a device silicon areaPL), an integral probability function P (E) is further calculatedPL); and integrating the product of the heavy ion single event effect cross section function and the proton integral probability function to calculate the proton single event effect cross section of the device. The invention can realize the evaluation of the proton and single particle resistance of the device and has the characteristics of clear physical concept and high data result precision.

Description

Method for obtaining device proton single event effect cross section
Technical Field
The invention relates to a method for obtaining a proton single event effect section of a device, and belongs to the field of research of a space single event effect simulation test technology and a reinforcement technology.
Background
The natural radiation environment of the space where the spacecraft operates mainly consists of protons, heavy ions, electrons and the like. The radiation acts on an electronic system of the spacecraft, and can cause the performance degradation or damage of the device, thereby causing the failure or even the failure of the spacecraft and seriously influencing the reliability and the service life of the on-orbit spacecraft. The transient disturbance or permanent damage generated by the interaction of the incident single high-energy particle and the sensitive region of the device is called as single event effect, and the single event effect is one of the most main threats faced by the space satellite electronic system at present.
In a spatial radiation environment, protons and heavy ions are two main sources for generating a single event effect, wherein the heavy ions deposit energy in a sensitive volume of the device through direct ionization, and the protons generate ionization deposition energy of secondary particles mainly through nuclear reactions. A single event effect experiment of the device is developed based on ground heavy ions and a proton accelerator, a change curve of a single event effect section of the device, an LET value of the heavy ions and proton energy is obtained, and the method is a main means for internationally examining and evaluating the single event resistance of the device at present. At present, two heavy ion accelerators which can be used for single-particle effect experiments are provided in China, and the requirements of research and evaluation of the single-particle experiments of the heavy ions of devices in China can be met. In the aspects of proton single event effect research and evaluation, the two invention patents with the application number of 2013105709560 and the invention name of 'a method for performing a device proton single event effect test by using an accelerator high-energy proton' and the application number of 2012103595734 and the invention name of 'a method for testing the device proton single event effect resistance capability' both provide a method for obtaining a proton single event effect section by using a medium-high energy proton accelerator to perform the device proton single event effect test. However, because China lacks a medium-high energy proton accelerator which can be used for researching proton single event effect for a long time, the evaluation of the medium-high energy proton single event effect physical mechanism and the radiation resistance is seriously lagged compared with the international evaluation, and the evaluation of the proton single event resistance of the satellite device based on the proton accelerator has great limitation at present. The invention has the application number of 2009100855422 and is named as an evaluation method and a system for the radiation resistance of a satellite device, and the invention discloses a simple empirical formula by fitting a heavy ion single event effect cross section curve of the device and obtaining an expression of a proton single event effect cross section and proton energy based on fitting parameters, wherein the expression is a simple empirical formula, and the reaction products of protons and device materials are assumed to be silicon ions, partial parameters need to be set manually, so that the obtained proton single event effect cross section has a large error with an actual result, and the estimation of the proton single event cross section is about 1 order of magnitude.
Disclosure of Invention
The invention aims to provide a method for obtaining a proton single event effect section of a device, which is used for obtaining the proton single event effect section of the device under the condition of not carrying out a proton single event effect experiment by combining a secondary particle probability function generated by a proton nuclear reaction in a simulation calculation on the basis of obtaining heavy ion single event effect experiment data of the device, thereby providing a support for evaluating the proton single event resistance of the device and making up for the defects of the prior art.
The technical scheme of the invention is to provide a method for obtaining a proton single event effect section of a device, which comprises the following steps:
the method comprises the following steps: performing a heavy ion single event effect experiment on a device to be tested to obtain a heavy ion single event effect cross section function;
step two: constructing a device structure, and simulating and calculating a probability function of secondary particles generated by nuclear reaction between protons and device constructing materials under different energies;
step three: and (4) integrating the product of the heavy ion single event effect cross section function obtained in the step one and the secondary particle probability function obtained in the step two to obtain the proton single event effect cross section of the device to be tested.
Preferably, the first step is specifically:
1.1, performing a heavy ion single event effect experiment on a device to be tested to obtain heavy ion single event effect cross section experimental data under at least 5 LET values;
1.2 fitting the experimental data obtained in the step 1.1 by using a Weibull function to obtain a fitted heavy ion single event effect cross-sectional function sigmaion(L)；
σion(L)＝σsat(1-exp{-[(L-L0)/W]S}) (1-1)
In the formula sigmasatThe section is a heavy ion single event effect saturation section; l is0The threshold value is a heavy ion single event effect LET threshold value; w is a scale parameter; s is a shape parameter; l is the effective LET value of heavy ions.
Preferably, the second step is specifically:
2.1 constructing a device structure comprising a plurality of metal wiring layers, utilizing Monte Carlo particle transport simulation to calculate the energy EPAfter nuclear reaction of the protons and the material of the build-up device, a probability of generating secondary particles with an LET value L in the silicon region of the build-up device is obtained, and a probability function p (E)PL) a plot of LET values;
2.2 further calculate the integral probability function P (E)PL), the expression of which is:
wherein L' is energy EPThe LET value of the secondary particles produced by the proton nuclear reaction of (1).
Preferably, the expression of the proton single event effect cross section of the device to be tested in the third step is as follows:
in the formula: ePAs proton energy, σP(EP) Is energy of EPCross section of proton Single Event Effect (SEE).
The invention has the beneficial effects that:
1. according to the invention, the proton single event effect section of the device can be obtained without developing a proton single event experiment, so that the evaluation on the proton single event resistance of the device is realized, and the experiment cost is greatly saved;
2. the method starts from a fundamental mechanism that secondary particles are generated by nuclear reaction of protons and device materials to trigger a single event effect, and obtains a device proton single event effect section by combining heavy ion single event effect experimental data, so that the method has the advantages of clear physical concept, good coincidence of calculation results and experimental data, and high data result precision;
3. the method is also suitable for obtaining the neutron single event effect section.
Drawings
FIG. 1 is a flow chart of a method for obtaining a proton single event effect cross section of a device according to the present invention;
FIG. 2 is a cross section of a heavy ion single event effect of a device in an embodiment of the invention;
FIG. 3 is a device structure including multiple metal wiring levels;
FIG. 4 is a plot of an integrated probability function versus a secondary particle LET value in an embodiment of the present invention;
fig. 5 is a cross section of the proton single event effect obtained in the embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made by taking a static memory circuit as an example and referring to the drawings, and the following examples are only used to illustrate the present invention, but not to limit the scope of the present invention.
Fig. 1 is a flowchart of a method for obtaining a proton single event effect cross section of a device according to the present invention, and the method is described in detail with reference to fig. 1.
S1, carrying out SRAM (static random access memory) heavy ion single event effect experiments to obtain experimental data of heavy ion single event effect sections of the static memory with at least 5 LET value points;
s2, carrying out Weibull function fitting on the heavy ion single event effect cross section experimental data of the static memory, and obtaining the fitted heavy ion single event effect cross section function sigmaion(L), see FIG. 2, with the abscissa being the effective LET value L for heavy ions;
the expression is as follows:
σion(L)＝1.5×10-7(1-exp{-[(L-3)/65]1.4}) (1-4)
wherein the heavy ion single event effect saturates the cross section sigmasat＝1.5×10-7LET threshold L for heavy ion single event effect0＝3，W＝65，S＝1.4。
S3, according to the process information of the longitudinal material of the static memory to be tested, a device structure including multiple metal wiring layers (if unknown, silicon dioxide layers may be used instead) is constructed, as shown in fig. 3. Carrying out Mongolian card particle transport simulation, and calculating the energy to be EPThe protons react with the material of which the device is constructedThe probability of generating secondary particles with an LET value L in the silicon region is obtained as a probability function (E)PL) versus LET value.
S4 ] to the probability function p (E)PL) and LET value to obtain a secondary particle integral probability function P (E)PL) to LET value.
And S5, repeating the steps S3 and S4, and obtaining a relation curve between the integral probability function of the secondary particles generated by the proton nuclear reaction and the LET under different energies, wherein the relation curve is shown in figure 4.
S6, integrating the product of the heavy ion single event effect cross-section function (formula 1-4) and the proton secondary particle probability function according to the formula (formula 1-6) to obtain the energy EPFinally, the proton single event effect cross section with different energy is obtained, as shown in fig. 5.

Claims (3)

1. A method for obtaining a device proton single event effect cross section is characterized by comprising the following steps:
the method comprises the following steps: performing a heavy ion single event effect experiment on a device to be tested to obtain a heavy ion single event effect cross section function;
step two: constructing a device structure, and simulating and calculating a probability function of secondary particles generated by nuclear reaction between protons and device constructing materials under different energies;
step three: integrating the product of the heavy ion single event effect cross section function obtained in the step one and the secondary particle probability function obtained in the step two to obtain a proton single event effect cross section of the device to be tested;
the first step is specifically as follows:
1.1, performing a heavy ion single event effect experiment on a device to be tested to obtain heavy ion single event effect cross section experimental data under at least 5 LET values;
1.2 fitting the experimental data obtained in the step 1.1 by using a Weibull function to obtain a fitted heavy ion single event effect cross-sectional function sigmaion(L)；
σion(L)＝σsat(1-exp{-[(L-L0)/W]S}) (1-1)
In the formula sigmasatThe section is a heavy ion single event effect saturation section; l is0The threshold value is a heavy ion single event effect LET threshold value; w is a scale parameter; s is a shape parameter; l is the effective LET value of heavy ions.
2. The method for obtaining the proton single event effect cross section of the device according to claim 1, wherein:
the second step is specifically as follows:
2.1 constructing a device structure comprising a plurality of metal wiring layers, utilizing Monte Carlo particle transport simulation to calculate the energy EPAfter nuclear reaction of the protons and the material of the build-up device, a probability of generating secondary particles with an LET value L in the silicon region of the build-up device is obtained, and a probability function p (E)PL) a plot of LET values;
2.2 further calculate the integral probability function P (E)PL), the expression of which is:
wherein L' is energy EPThe LET value of the secondary particles produced by the proton nuclear reaction of (1).
3. The method for obtaining the proton single event effect cross section of the device according to claim 2, wherein:
the expression of the proton single event effect cross section of the device to be tested in the third step is as follows:
in the formula: ePAs proton energy, σP(EP) Is energy of EPCross section of proton Single Event Effect (SEE).
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CN112668232B (en) * 2021-01-05 2022-03-11 中国原子能科学研究院 Method, device, equipment and medium for acquiring SEE section caused by nuclear reaction
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