CN103870664A - Bipolar device ELDRS effect acceleration experiment method based on hydrogen ion injecting - Google Patents
Bipolar device ELDRS effect acceleration experiment method based on hydrogen ion injecting Download PDFInfo
- Publication number
- CN103870664A CN103870664A CN201410135842.8A CN201410135842A CN103870664A CN 103870664 A CN103870664 A CN 103870664A CN 201410135842 A CN201410135842 A CN 201410135842A CN 103870664 A CN103870664 A CN 103870664A
- Authority
- CN
- China
- Prior art keywords
- bipolar device
- hydrionic
- fluence
- hydrogen ion
- eldrs
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Medicines That Contain Protein Lipid Enzymes And Other Medicines (AREA)
- Management, Administration, Business Operations System, And Electronic Commerce (AREA)
Abstract
The invention provides a bipolar device ELDRS effect acceleration experiment method based on hydrogen ion injecting, and belongs to the technical field of electronics. The method is used for solving the problem that a universal method for acceleration experiment of the bipolar device ELDRS effect ground simulation experiment does not exist, that is, dosage rate enhancement effect acceleration experiment can not be achieved by using high dose rate irradiation experiment. The method comprises the following steps that according to the thickness and density of a passivation layer of a selected bipolar device, simulation is conducted by the adoption of SRIM software, the energy and the range of injected hydrogen ions are acquired, simulation is conducted by the adoption of TCAD software, anti-irradiation property parameters are acquired, current gain is conducted, fluence of the hydrogen ions is recorded, the hydrogen ions are injected into the passivation layer according to the energy, the range and the fluence of the injected hydrogen ions, and irradiation experiment is conducted to the bipolar device injected with the hydrogen ions. The method can be used in the space irradiation environment.
Description
Technical field
The acceleration experimental technique that the present invention relates to a kind of bipolar device ELDRS effect, belongs to electronic technology field.
Background technology
In ionizing radiation environment, the radiation damage that bipolar device and circuit are subject under LDR irradiation, than much bigger under high dose rate condition, so-called LDR radiation damage enhancement effect that Here it is (ELDRS-Enhanced Low Dose Rate Sensitivity).Electronic devices and components space environment during one's term of military service ubiquity ELDRS effect, this has brought huge challenge to capability of resistance to radiation ground Irradiation simulating experiment test appraisal procedures of electronic devices and components.Due to spacecraft in-orbit during one's term of military service suffered typical radiation dose rate be 10
-4～10
-2rad (Si)/s, and irradiation experiment dose rate used in common ground is 50～300rad (Si)/s.Due to the existence of ELDRS effect, the device radioresistance level that ground experiment chamber method of testing is obtained and the actual capability of resistance to radiation serious non-compliance of the bipolar device using under space environment, thus bring great hidden danger to the reliability of astrionic system.From the nineties in last century, bipolar device (transistor and circuit) LDR enhancement effect (ELDRS) and mechanism are just the hot issues of electron device space Study on Irradiation Effects always.Due to spacecraft, the radiation dose rate of radiation environment is very low in-orbit, and ground simulating can not be simulated dose rate condition in-orbit completely, need to carry out the corresponding experiment of accelerating.But, still do not have ELDRS effect to accelerate the universal method of experiment at present.If it is not only uneconomical but also consuming time that the LDR assessment electronic devices and components of ground experiment employing real space environment carry out capability of resistance to radiation, need to accelerate experiment to the ELDRS effect of bipolar device.
Summary of the invention
The present invention seeks to the general usability methods that the ELDRS effect ground simulating in order to solve existing bipolar device does not accelerate experiment, can not test to realize LDR enhancement effect with high-dose-rate irradiation and accelerate the problem of testing, provide a kind of bipolar device ELDRS effect of injecting based on hydrogen ion to accelerate experimental technique.
A kind of bipolar device ELDRS effect of injecting based on hydrogen ion of the present invention is accelerated experimental technique, and the detailed process of the method is:
Step 1, choose a bipolar device, according to thickness and the density of the bipolar device passivation layer of choosing, utilize SRIM software to carry out emulation to the structure of this bipolar device, obtain hydrionic energy and the range of injection;
Step 2, hydrionic energy and the range determined according to step 1, utilize TCAD software to carry out emulation to the bipolar device structure of choosing, and obtains anti-radiation performance parameter; Described anti-radiation performance parameter comprises current gain, superfluous base current, source current and input current;
The hydrionic fluence of bipolar device is injected in step 3, change, makes the current gain variable quantity of TCAD simulation bipolar device be less than 10%, record hydrionic fluence now;
The hydrionic fluence of injection that step 4, the hydrionic energy of the injection of obtaining according to step 1 and range and step 3 are obtained, hydrogen injecting ion in the passivation layer of the bipolar device of choosing;
Step 5, the bipolar device after hydrogen injecting ion is carried out to irradiation experiment.
Advantage of the present invention: hydrionic injection meeting has significant impact to the ELDRS effect of electron device, and then affect the Radiation hardness of device, this microphysics mechanism that illustrates that hydrionic injection can be further investigation ELDRS effect provides foundation.Hydrionic injection makes bipolar device internal electrical change from the state of damage defect, thereby has accelerated the ELDRS effect of electronic devices and components.The present invention is based on the hydrogen ion implantttion technique of different-energy and fluence, inject by the hydrogen ion of controlling different-energy and fluence, greatly accelerate the ELDRS effect of bipolar device, strengthen the current gain degree of injury of bipolar transistor, and then reached the object that shortens the ELDRS effect experiment time.
ELDRS effect acceleration experimental technique step of the present invention is simple, easy operating, and the method have consuming time less, feature that cost is low, can be used for the experiment of bipolar device ELDRS effect under space radiation environment, the anti-radiation performance that also can be optimization bipolar device and circuit provides necessary foundation.ELDRS effect of the present invention is accelerated experimental technique the test of ELDRS effect and the research of electronic devices and components is significant.In the application of bipolar device ELDRS effect study and radiation hardened technology, there are obvious advantage and application prospect widely.
Accompanying drawing explanation
Fig. 1 is the ionising radiation defect distribution schematic diagram of bipolar transistor;
Fig. 2 is that current gain variable quantity is with the variation relation schematic diagram of irradiation fluence under the 70keV of different fluences hydrogen ion injection condition.
Embodiment
Embodiment one: described in present embodiment, a kind of bipolar device ELDRS effect of injecting based on hydrogen ion is accelerated experimental technique, and the detailed process of the method is:
Step 1, choose a bipolar device, according to thickness and the density of the bipolar device passivation layer of choosing, utilize SRIM software to carry out emulation to the structure of this bipolar device, obtain hydrionic energy and the range of injection;
Step 2, hydrionic energy and the range determined according to step 1, utilize TCAD software to carry out emulation to the bipolar device structure of choosing, and obtains anti-radiation performance parameter; Described anti-radiation performance parameter comprises current gain, superfluous base current, source current and input current;
The hydrionic fluence of bipolar device is injected in step 3, change, makes the current gain variable quantity of TCAD simulation bipolar device be less than 10%, record hydrionic fluence now;
The hydrionic fluence of injection that step 4, the hydrionic energy of the injection of obtaining according to step 1 and range and step 3 are obtained, hydrogen injecting ion in the passivation layer of the bipolar device of choosing;
Step 5, the bipolar device after hydrogen injecting ion is carried out to irradiation experiment.
Embodiment two: present embodiment is described further embodiment one, the scope of the hydrionic energy described in step 1 is: 60keV-110keV.
Embodiment three: present embodiment is described further embodiment one, the scope of the hydrionic fluence described in step 3 is: 1E9p/cm
2-1E11p/cm
2.
The present invention described a kind of based on hydrogen ion inject bipolar device ELDRS effect accelerate experimental technique, its application comprises NPN device, PNP device, digital bipolar circuit, simulated dual polar circuit and digital-to-analogue/modulus circuit.On the basis of ELDRS effect microphysics mechanism that does not affect bipolar device, to inject by hydrogen ion, the ionising radiation defect of aggravation device inside produces, thereby plays the object of accelerating its ELDRS effect of experiment.The ionising radiation defect distribution schematic diagram of bipolar transistor, as shown in Figure 1..
The radiation damage that LDR enhancement effect (ELDRS effect) produces is take positive oxide charge and interface state as main, and this two classes defect can produce larger impact to the superfluous base current of device and current gain, cause device generation performance degradation.High-dose-rate irradiation can form generation and the transmission of charged region obstruction ionising radiation defect in the oxide skin(coating) of device, by the hydrogen ion implantttion technique of different-energy and fluence, can avoid the inner charged region that produces of passivation layer of device, greatly promote the density of ionising radiation defect and the generation speed of oxide charge and interface state, and then the test duration of shortening LDR strengthen test, reach the object of testing to realize LDR enhancement effect accelerated test with high-dose-rate irradiation under the hydrogen ion injection condition of different-energy and fluence.
For the impact of hydrogen ion implantttion technique on bipolar transistor LDR enhancement effect is described, under the 70keV hydrogen ion injection condition that Fig. 2 has provided in different fluences, current gain variable quantity is with the variation relation schematic diagram of irradiation fluence.Curve 1 indicates without Implantation, current gain variable quantity when high dose rate; Curve 2 represents that injection rate IR is 1E9p/cm
2time current gain variable quantity; Curve 3 represents that injection rate IR is 1E10p/cm
2time current gain variable quantity; Curve 4 represents that injection rate IR is 1E11p/cm
2time current gain variable quantity; Current gain variable quantity when curve 5 represents LDR.As seen from the figure, hydrogen ion inject fluence higher, under same absorbent dosage radiation damage larger, wherein, fluence is 1E11p/cm
2hydrogen ion injection condition high-dose-rate irradiation result and LDR radiation parameter the most approaching.
Claims (5)
1. the bipolar device ELDRS effect of injecting based on hydrogen ion is accelerated an experimental technique, it is characterized in that, the detailed process of the method is:
Step 1, choose a bipolar device, according to thickness and the density of the bipolar device passivation layer of choosing, utilize SRIM software to carry out emulation to the structure of this bipolar device, obtain hydrionic energy and the range of injection;
Step 2, hydrionic energy and the range determined according to step 1, utilize TCAD software to carry out emulation to the bipolar device structure of choosing, and obtains anti-radiation performance parameter; Described anti-radiation performance parameter comprises current gain, superfluous base current, source current and input current;
The hydrionic fluence of bipolar device is injected in step 3, change, makes the current gain variable quantity of TCAD simulation bipolar device be less than 10%, record hydrionic fluence now;
The hydrionic fluence of injection that step 4, the hydrionic energy of the injection of obtaining according to step 1 and range and step 3 are obtained, hydrogen injecting ion in the passivation layer of the bipolar device of choosing;
Step 5, the bipolar device after hydrogen injecting ion is carried out to irradiation experiment.
2. a kind of bipolar device ELDRS effect of injecting based on hydrogen ion is accelerated experimental technique according to claim 1, it is characterized in that, the scope of the hydrionic energy described in step 1 is: 60keV-110keV.
3. a kind of bipolar device ELDRS effect of injecting based on hydrogen ion is accelerated experimental technique according to claim 1, it is characterized in that, the scope of the hydrionic fluence described in step 3 is: 1E9p/cm
2-1E11p/cm
2.
4. a kind of bipolar device ELDRS effect of injecting based on hydrogen ion is accelerated experimental technique according to claim 3, it is characterized in that, the hydrionic fluence described in step 3 is 1E11p/cm
2.
5. a kind of bipolar device ELDRS effect of injecting based on hydrogen ion is accelerated experimental technique according to claim 1, it is characterized in that, described bipolar device comprises NPN device, PNP device, digital bipolar circuit, simulated dual polar circuit and digital-to-analogue/modulus circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410135842.8A CN103870664B (en) | 2014-04-04 | 2014-04-04 | Bipolar device ELDRS effect acceleration experiment method based on hydrogen ion injecting |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410135842.8A CN103870664B (en) | 2014-04-04 | 2014-04-04 | Bipolar device ELDRS effect acceleration experiment method based on hydrogen ion injecting |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103870664A true CN103870664A (en) | 2014-06-18 |
| CN103870664B CN103870664B (en) | 2017-01-18 |
Family
ID=50909191
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410135842.8A Active CN103870664B (en) | 2014-04-04 | 2014-04-04 | Bipolar device ELDRS effect acceleration experiment method based on hydrogen ion injecting |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103870664B (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104849642A (en) * | 2015-04-29 | 2015-08-19 | 工业和信息化部电子第五研究所 | Bipolar device enhanced low dose rate sensitivity effect test preprocessing system and bipolar device enhanced low dose rate sensitivity effect test preprocessing method |
| CN106384716A (en) * | 2016-10-19 | 2017-02-08 | 哈尔滨工业大学 | Bipolar device irradiation resisting reinforcing method based on reduction of hydrogen content |
| CN108254668A (en) * | 2018-02-09 | 2018-07-06 | 哈尔滨工业大学 | It is a kind of to analyze the method for interface state defects being accelerated to be formed during electronic component ionization radiation injury mechanism |
| CN108303629A (en) * | 2018-02-08 | 2018-07-20 | 哈尔滨工业大学 | A method of quickly determining that irradiation bomb generates radiation effect in bipolar transistor based on hydrogen treat |
| CN108362988A (en) * | 2018-02-09 | 2018-08-03 | 哈尔滨工业大学 | A method of inhibiting bipolar transistor low dose rate enhancement effect |
| CN108460196A (en) * | 2018-02-09 | 2018-08-28 | 哈尔滨工业大学 | The equivalent evaluation test method of bipolar device xenogenesis irradiation bomb ionization damage |
| CN109521295A (en) * | 2018-11-13 | 2019-03-26 | 中国空间技术研究院 | A kind of low dose rate irradiation damage enhancement effect determination method |
| CN112834846A (en) * | 2020-12-31 | 2021-05-25 | 中国科学院电工研究所 | Method for actively accelerating irradiation failure of semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103116176A (en) * | 2013-01-23 | 2013-05-22 | 哈尔滨工业大学 | Ground equivalent fluence calculating method for electronic component charged particle irradiation effect |
-
2014
- 2014-04-04 CN CN201410135842.8A patent/CN103870664B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103116176A (en) * | 2013-01-23 | 2013-05-22 | 哈尔滨工业大学 | Ground equivalent fluence calculating method for electronic component charged particle irradiation effect |
Non-Patent Citations (5)
| Title |
|---|
| DAVID. R. HUGHART等: "The Effects of Aging and Hydrogen on the Radiation Response of Gated Lateral PNP Bipolar Transistors", 《IEEE TRANSACTIONS ON NUCLEAR SCIENCE》 * |
| RONALD L. PEASE等: "The Effects of Hydrogen on the Enhanced Low Dose Rate Sensitivity (ELDRS) of Bipolar Linear Circuits", 《IEEE TRANSACTIONS ON NUCLEAR SCIENCE》 * |
| 刘敏波 等: "双极集成电路低剂量率辐射损伤增强效应的高温辐照加速实验", 《强激光与粒子束》 * |
| 张婷 等: "双极型器件的总剂量辐射效应与损伤机理", 《核电子学与探测技术》 * |
| 陆妩 等: "双极运算放大器低剂量率辐照损伤增强效应的变温加速辐照方法", 《原子能科学技术》 * |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104849642A (en) * | 2015-04-29 | 2015-08-19 | 工业和信息化部电子第五研究所 | Bipolar device enhanced low dose rate sensitivity effect test preprocessing system and bipolar device enhanced low dose rate sensitivity effect test preprocessing method |
| CN104849642B (en) * | 2015-04-29 | 2018-01-02 | 工业和信息化部电子第五研究所 | The pretreatment system and method for bipolar device enhanced low dose rate sensitivity experiment |
| CN106384716A (en) * | 2016-10-19 | 2017-02-08 | 哈尔滨工业大学 | Bipolar device irradiation resisting reinforcing method based on reduction of hydrogen content |
| CN108303629A (en) * | 2018-02-08 | 2018-07-20 | 哈尔滨工业大学 | A method of quickly determining that irradiation bomb generates radiation effect in bipolar transistor based on hydrogen treat |
| CN108254668A (en) * | 2018-02-09 | 2018-07-06 | 哈尔滨工业大学 | It is a kind of to analyze the method for interface state defects being accelerated to be formed during electronic component ionization radiation injury mechanism |
| CN108362988A (en) * | 2018-02-09 | 2018-08-03 | 哈尔滨工业大学 | A method of inhibiting bipolar transistor low dose rate enhancement effect |
| CN108460196A (en) * | 2018-02-09 | 2018-08-28 | 哈尔滨工业大学 | The equivalent evaluation test method of bipolar device xenogenesis irradiation bomb ionization damage |
| CN108254668B (en) * | 2018-02-09 | 2020-05-26 | 哈尔滨工业大学 | Method for accelerating formation of interface state defects in process of analyzing ionizing radiation damage of device |
| CN108362988B (en) * | 2018-02-09 | 2020-12-29 | 哈尔滨工业大学 | Method for inhibiting bipolar transistor low dose rate enhancement effect |
| CN109521295A (en) * | 2018-11-13 | 2019-03-26 | 中国空间技术研究院 | A kind of low dose rate irradiation damage enhancement effect determination method |
| CN109521295B (en) * | 2018-11-13 | 2021-04-13 | 中国空间技术研究院 | Low dose rate irradiation damage enhancement effect judgment method |
| CN112834846A (en) * | 2020-12-31 | 2021-05-25 | 中国科学院电工研究所 | Method for actively accelerating irradiation failure of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103870664B (en) | 2017-01-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103870664A (en) | Bipolar device ELDRS effect acceleration experiment method based on hydrogen ion injecting | |
| CN103869199B (en) | A kind of bipolar device LDR enhancement effect accelerated test method that soaks technology based on high-temperature hydrogen | |
| CN103871873B (en) | Bipolar device radiation hardened method based on launch site geometry | |
| CN103887155B (en) | A kind of bipolar device resist displacement Radiation Hardened method based on base ion implanting mode | |
| CN101806754A (en) | Thermal control coating space-radiation environmental effect ground simulation experiment method for spacecrafts | |
| CN109918723A (en) | A kind of single-particle fault filling method based on particle incidence randomness | |
| CN103884945B (en) | Based on the LDR enhancement effect Acceleration study method changing temperature and dose rate | |
| CN103887154A (en) | Method for reinforcing ionization radiation resistance of bipolar device based on passivation layer ion injection mode | |
| CN109727850A (en) | A method of aimed thin film longitudinal direction Uniform Doped is realized using ion implanting | |
| CN106483061B (en) | A method of it is irradiated based on charged particle and generates cascade and point defect | |
| CN109902331B (en) | High-power microwave electron density analysis method based on negative ion desorption process | |
| Pershenkov et al. | Conversion model of radiation-induced interface-trap buildup and the some examples of its application | |
| Ondreka et al. | Recommissioning of SIS18 after FAIR upgrades | |
| Huang et al. | Preliminary study on the injection system upgrade for CSNS-II | |
| CN208256613U (en) | A kind of lasing ion source device | |
| Alexeev et al. | ITEP-TWAC progress report | |
| Mityanina et al. | Longitudinal Particle Dynamics and Cooling in NICA Collider | |
| Jana | Positive ion extraction from plasma source and its application in fusion research | |
| Huang et al. | Design of compact accelerator module of the induction synchrotron | |
| Wan et al. | Charge deposition model for investigating SE-microdose effect in trench power MOSFETs | |
| Li et al. | Experiment and Simulation Study of the Capture and Acceleration Process of XiPAF Synchrotron | |
| Voulot et al. | Transverse emittance measurements of the REX-ISOLDE beams in preparation for the HIE-ISOLDE commissioning | |
| Yamamoto et al. | Simulation for Control of Longitudinal Beam Emittance in J-PARC MR | |
| De Maria et al. | JACoW: Smooth and beta-beating-free optics transitions for HL-LHC | |
| Uesugi et al. | STUDY OF BEAM INJECTION EFFICIENCY IN THE FIXED FIELD ALTERNATING GRADIENT SYNCHROTRON IN KURNS |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |