CN101752391A - Snow slide drifting detector with MOS fully-depleted drifting channel and detecting method thereof - Google Patents
Snow slide drifting detector with MOS fully-depleted drifting channel and detecting method thereof Download PDFInfo
- Publication number
- CN101752391A CN101752391A CN200810180461A CN200810180461A CN101752391A CN 101752391 A CN101752391 A CN 101752391A CN 200810180461 A CN200810180461 A CN 200810180461A CN 200810180461 A CN200810180461 A CN 200810180461A CN 101752391 A CN101752391 A CN 101752391A
- Authority
- CN
- China
- Prior art keywords
- mos
- detector
- add
- area
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Light Receiving Elements (AREA)
Abstract
The invention provides an MOS-ADD detector which is made of a silicon single crystal wafer. When being applied to SiPM multi-unit integration, the MOS-ADD detector not only can conveniently solve the contradiction between the SiPM unit area and the requirement for output capacitance by adopting an MOS-ADD structure, but also can provide high filling factor (higher than 70%) and high detecting efficiency at the same time as keeping low output capacitance. Meanwhile, as a dot-shaped snow slide zone with small area is adopted, the area of a high-field zone is greatly reduced, thereby effectively reducing leakage current and secret marks (compared with an SiPM device with the same effective detecting area). MOS-ADD adopts the method of front-face incidence, and all electrodes of an incident plane can adopt transparent conductive films, so that the blockage of the electrodes and the light absorption can be effectively reduced. A fully-depleted active zone can detect several microns or tens of microns, and is sensitive to a wave band from blue light to infrared light. When the MOS-ADD structure is used for manufacturing a single-photon detector with large unit area, as the MOS-ADD structure has low output capacitance and do not depend on the area of the detector, the electronic noise of the MOS-ADD structure is usually far lower than a conventional snow slide LED (light-emitting diode) with the same area and thickness respectively in a light-transmission window and a light absorption zone. Therefore, the MOS-ADD detector is suitable for detecting flexible X-rays and visible light with small penetration depth. If being combined with a scintillator, the MOS-ADD detector can also be used for detecting high-energy X-rays or Gamma rays.
Description
The present invention relates to device architecture and the operation principle thereof of a kind of novel semi-conductor photodetector MOS-ADD, belong to HO1L 27/00 based semiconductor device technology field.
Polynary Geiger avalanche photodide (M-GAPD) is also referred to as silicon photomultiplier SiPM (SiliconPhotomultiplier), is applied to weak light detection.Its operation principle and developing history are consulted document D.Renker.Geiger-mode avalanche photodiodes, history, properties andproblems.Nuclear Instruments and Methods in Physics Research A 567 (2006) 48-56.Than traditional photomultiplier PMT, SiPM has the single photon response, gain is big, insensitive to magnetic field, manufacture craft is simple, cost is low, volume is little, be easy to advantages such as CMOS technology is integrated, operating voltage is low, safer, obtained in recent years developing rapidly, be considered to become in the near future the substitute of part photomultiplier.The application of SiPM in study of high energy physics, X-ray detection X, biomedicine, quantum communications and other weak light detection fields all is the focus of current research.For example, SiPM can be used for large-scale astronomical telescope and (consult M.R.Squillante, R.A.Myers, F.Robertson, R.Farrell, J.F.Christian, G.Entine.Avalanche photodiode arrays for a high-angular resolution X-rayand gamma-ray imaging telescopes.Nuclear Instruments and Methods inPhysics Research Section A:, Volume 580, Issue 2,1 October 2007, Pages848-852), particle physics is surveyed and (is consulted D.Renker.New developments on photo-sensorsfor particle physics.Nuclear Instruments and Methods in Physics ResearchSection A:In Press, Corrected Proof, Available online 15 August 2008), gene diagnosis in the medical research (is consulted I.Rech, A.Restelli, S.Cova, M.Ghioni, M.Chiari, M.Cretich.Microelectronic photosensors for genetic diagnosticMicrosystems.Sensors and Actuators B 100, pp.158-162,2004) and biotechnology (consult Schwartz, David Eric; Gong, Ping; Shepard, Kenneth L.Time-resolvedForster-resonance-energy-transfer DNA assay on an active CMOS microarray.Biosens Bioelectron, 2008,24 (3): 383-390) etc.But, since at present the SiPM technology that is that all right is ripe, also have a lot of shortcomings, as detection efficient lower (＜30%, be better than PMT slightly), narrow dynamic range (10
2-10
3/ mm
2), calculate mentally that digit rate is higher, optical crosstalk is serious, area is less etc. (consults YuriMusienko, " Advances in multipixel Geiger-mode avalanche photodiodes (silicon photomultipliers) ", Nuclear Instruments and Methods in PhysicsResearch A:, Corrected Proof, Available online 19 August 2008), limited the practical application of SiPM.During new device unit construction design and processes improves and explores energetically.
SiPM is made up of a large amount of small size avalanche diode unit.Existing SiPM detection efficient is low mainly to be because its geometrical efficiency (or fill factor, curve factor) is lower.Because temporal correlation is measured and the requirement of detector service behaviour, the unit output capacitance can not be too big, and dark counts and leakage current are low more good more, promptly requires the area of avalanche photodide probe unit can not be too big.High unit number (10
3More than) SiPM since " dead band " (non-sensitive district) between the unit and unit lead-in wire and electrode preparation occupy, fill factor, curve factor often lower (generally being lower than 50%), this has just caused detection efficient lower.Simultaneously, the uptake zone degree of depth of SiPM is limited, in order to reduce material to the absorption of light and the needs of detection short-wavelength light, the junction depth of unit is generally all very shallow, the detection detection efficient of long light is lower (consults S.Gomi to wavelength, H.Hano, T.Iijima, S.Itoh, K.Kawagoe, et al. " Developmentand study of the multi pixel photon counter " Nuclear Instruments andMethods in Physics Research Section A:, Volume 581, Issues 1-2,21October 2007, Pages 427-432).
At the problems referred to above, the objective of the invention is to propose a kind of novel avalanche probe cellular construction---have the snowslide drifting detector that MOS exhausts the drift passage entirely, be designated hereinafter simply as MOS-ADD (MOS depletion drift channelAvalanche Drift Detector).It both can be used as the basic probe unit of SiPM and is integrated on a large scale, also can be made into large-area single-element detector.The basic structure of MOS-ADD is with large-area MOS structure and buries the common full depletion region that forms of anti-PN junction partially exhausting active area and forming a photo-generated carrier (electronics or hole) energy valley therein as the drift passage as detector, in passage, produce the lateral drift electric field with inside and outside drift rings, and with " point-like " Geiger avalanche diode (GAPD) of being positioned at unit center collecting region as photo-generated carrier.So far also there is not this structure of bibliographical information or practical application.
Be applied to the SiPM multiple unit when integrated, adopt the MOS-ADD structure can solve the contradiction of SiPM cellar area between requiring with output capacitance easily, can in the low output capacitance of maintenance, provide very high fill factor, curve factor (greater than 70%) and detection efficient.Simultaneously, owing to adopt the very point-like avalanche region of small size, the high field region area reduces greatly, can effectively reduce leakage current and secret mark digit rate (than the APD device of identical useful detection area).MOS-ADD adopts positive incident mode, and all electrodes of the plane of incidence all can adopt nesa coating, and for example tin indium oxide (ITO) film or very thin metal film be as electrode material, effectively reduces blocking and absorbing of electrode pair light.
When the MOS-ADD structure is used for production unit large tracts of land single-photon detector, little and do not rely on the area of detector because of output capacitance, its electronics noise generally (is consulted S.Tanaka much smaller than the conventional avalanche photodide with same logical light window area and light absorption district thickness, J.Kataoka, Y.Kanai, Y.Yatsu, M.Arimoto, M.Koizumi, N.Kawai, Y.Ishikawa, S.Kawai, N.Kawabata, " Development ofwideband X-ray and gamma-ray spectrometer using transmission-type; large-areaAPD ", Nuclear Instruments and Methods in Physics Research Section A, Volume582, Issue 2,21 November 2007, Pages 562-568), be suitable for the more shallow grenz ray of penetration depth, ultraviolet light, the detection of visible light and near infrared light.If can also be used to surveying high-octane X or gamma-rays, be with a wide range of applications in fields such as low light level detection, nuclear medicine, study of high energy physics in conjunction with scintillator.
For achieving the above object, the present invention takes following technical scheme:
A kind of novel MOS of having exhausts the snowslide drifting detector of drift passage entirely, English abbreviates MOS ADD (MOSdepletion drift channel Avalanche Drift Detector) as, the semi-conducting material that it is characterized in that making this detector is a silicon single crystal flake, each detector cells by " point-like " avalanche diode collecting region, exhaust active area, large-area transparent gate MOS structure, bury the pn knot, interior drift electrode, electrode and the ground connection formations that drift about outward.
Described silicon single crystal flake doping type is N type or P type, and doping content is lower than 1 * 10
17Cm
-3, thickness is 100 microns-0.5 millimeter, crystal orientation＜100 〉,＜110 or＜111, the single or double polished silicon wafer;
Described " point-like " avalanche diode collecting region is positioned at the center of detector cells, and its area is less than 1000 μ m
2
The described doping type that exhausts active area is opposite with the silicon single crystal flake doping type, 0.1 micron-10 microns of the degree of depth;
Described large-area transparent gate MOS structure is by nesa coating-SiO
2-Si constitutes, and double electrode and the antireflective coating done of nesa coating can be ITO or very thin metal (for example silver, gold, aluminium, titanium etc.), and its thickness is 1nm-10 μ m, SiO
2Bed thickness 1nm-1 μ m;
The described pn of burying knot is by exhausting active area and the silicon single crystal flake substrate constitutes;
Described inside and outside drift electrode doping type is with to exhaust active area opposite, and the grounding electrode doping type adopts transparent conductor or aluminium film to do electrode and draws with to exhaust active area identical;
Described Novel MOS-ADD detector has cake and toroidal, obtains to have square or bar shape;
Described Novel MOS-ADD detector has unit or complex array structure, and the output of described complex array structure can be independent separately output, also can be whole parallel connections, shared 1 load;
The invention still further relates to described Novel MOS-ADD detector and survey the method for light signal.It is characterized in that:
Tested light signal goes into to inject detector (seeing through transparency electrode) from the front of described MOS-ADD detector;
During detector work, the described pn of burying knot adds reverse biased, and described MOS arrangement works is at spent condition, and described inside and outside drift electrode forms the anti-knot of pn partially with exhausting active area, and the absolute value of external electrode bias voltage is greater than the absolute value of interior electrode bias;
Described light signal refers near infrared light, visible light, ultraviolet light (wave-length coverage is the 0.2-1.1 micron) and soft X-ray (energy range is 1-20keV).
Specify the present invention below in conjunction with example.
Figure 1 shows that based on N type silicon single crystal flake the structural representation of the Novel MOS of hole drift-ADD unit.Detector by " point-like " avalanche diode collecting region Collecting electrode, exhaust active area P well (p-well, doping is subjected to the primary area), ITO transparent grid electrode MOS structure, bury pn knot, interior drift rings electrode R1, outer drift rings electrode R2, ground loop electrode GND.
The method of using Novel MOS of the present invention-ADD detector to survey light signal is: light signal goes into to inject detector from the detector front.GND ground connection, Collecting electrode electrode add negative bias and are pressed onto more than the avalanche breakdown voltage, cause avalanche multiplication and export the pulsed current signal of an amplification after a photohole floats to the avalanche region; ITO transparent grid electrode Gate and backplate Back electrode respectively add a suitable positive bias (with respect to GND), P well (pwell) is exhausted entirely and form a hole electromotive force energy valley in the P well, and photohole is concentrated in the energy valley to reduce the surface recombination loss; Interior drift rings electrode R1 adds little positive voltage (about 1-4V), outer drift rings electrode R2 adds the positive voltage higher several volts slightly than R1, forms the lateral drift electric field (the drift region Potential Distributing that is obtained by software simulation as shown in Figure 2) of a directed towards detector unit center in P well depletion region.The MOS structure is in weak transoid or spent condition, and weak inversion layer can make the lateral drift electric field more even as divider resistance.Tested light signal goes into to inject device (seeing through the ITO electrode) from the front of described MOS-ADD detector, in depletion region, produce electron-hole pair, electronics is ostracised and is entered inversion layer or substrate under the MOS raceway groove, and the hole will converge in drift passage (being hole electromotive force energy valley) and drift to the avalanche region (distribution and the flow direction of the hole current that is obtained by software simulation as shown in Figure 3) at detector center under the lateral electric fields that drift rings produced, the ionization that bumps in avalanche region multiplication and be exaggerated and export a pulsed current signal.
In other embodiments of the invention:
Novel MOS-ADD detector adopts P type silicon single crystal flake to make, and its crystal orientation is＜100 〉,＜111 or＜110, doping content is lower than 1 * 10
17Cm
-3, 100 microns-0.5 millimeter of thickness;
The area of " point-like " avalanche diode is less than 1000 μ m
2
The degree of depth that N well (N-well) exhausts active area is 0.1 micron-10 microns, is realized by technology such as ion injection, diffusion or extensions;
Transparent grid electrode MOS structure is by nesa coating-SiO
2-Si constitutes, and double electrode and the antireflective coating done of nesa coating can be ITO or very thin metal, for example aluminium, titanium, silver, gold etc., and its thickness is 1nm-10 μ m, SiO
2Bed thickness 1nm-1 μ m;
Inside and outside drift electrode R1, R2 can adopt ITO film or the very thin metal the same with transparent grid electrode MOS structure with grounding electrode GND, and its thickness is 1nm-10 μ m;
The MOS-ADD detector can also have square or bar shape except cake and toroidal;
The MOS-ADD detector can also have the structure of complex array or other mutation form except cellular construction.The output of described complex array structure can be independent separately output, or all in parallel, shared 1 load.
Need to prove that the foregoing description is only for the unrestricted claim of the present invention of explanation the present invention, and is any based on equivalents technology of the present invention, all should be in scope of patent protection of the present invention.
Claims (11)
1. Novel MOS-ADD detector is characterized in that:
The semi-conducting material of making this detector is a monocrystalline silicon piece, each detector cells by " point-like " avalanche diode collecting region, exhaust active area, large-area transparent gate MOS structure, bury the pn knot, interior drift electrode, electrode and the ground connection formations that drift about outward;
2. Novel MOS as claimed in claim 1-ADD detector is characterized in that: described silicon single crystal flake doping type is N type or P type, and doping content is lower than 1 * 10
17Cm
-3, thickness is 100 microns-0.5 millimeter, crystal orientation＜100 〉,＜110 or＜111, the single or double polished silicon wafer;
3. Novel MOS as claimed in claim 1-ADD detector is characterized in that: described " point-like " avalanche diode collecting region is positioned at the center of detector cells, and its area is less than 1000 μ m
2
4. Novel MOS as claimed in claim 1-ADD detector is characterized in that: the doping type that exhausts active area is opposite with the described silicon single crystal flake doping type of claim 2,0.1 micron-10 microns of the degree of depth;
5. Novel MOS as claimed in claim 1-ADD detector is characterized in that: described large-area transparent gate MOS structure is by nesa coating-SiO
2-Si (being the described active area that exhausts of claim 4) constitutes, double electrode and the antireflective coating done of nesa coating, and thickness is 1nm-10 μ m, SiO
2Bed thickness 1nm-1 μ m;
6. Novel MOS as claimed in claim 1-ADD detector is characterized in that: the described pn of burying knot exhausts active area and the described silicon single crystal flake substrate of claim 2 constitutes by claim 4 is described;
7. Novel MOS as claimed in claim 1-ADD detector, it is characterized in that: described inside and outside drift electrode doping type and claim 4 be described, and to exhaust active area opposite, ground connection doping type and claim 4 be described, and to exhaust active area identical, and adopting thickness is that the transparent conductor of 1nm-10 μ m or aluminium, titanium film are done electrode and drawn;
8. Novel MOS as claimed in claim 1-ADD detector is characterized in that: have cake and toroidal, obtain and have square or bar shape;
9. Novel MOS as claimed in claim 1-ADD detector is characterized in that: have unit or complex array structure, the output of described complex array structure can be independent separately output, or all in parallel, shared 1 load;
10. method of using the described Novel MOS of claim 1-ADD detector to survey light signal is characterized in that:
Tested light signal goes into to inject detector (seeing through transparency electrode) from the front of described MOS-ADD detector, during detector work, the described pn of the burying knot of claim 6 adds reverse biased, the described MOS arrangement works of claim 5 is at weak transoid or spent condition, the described active area that exhausts of described inside and outside drift electrode of claim 7 and claim 4 forms the anti-knot of pn partially, and the absolute value of external electrode bias voltage is greater than the absolute value of interior electrode bias;
11. light signal as claimed in claim 10 refers near infrared light, visible light, ultraviolet light (wave-length coverage is the 0.21.1 micron) or X-ray (energy range is 1-20keV).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101804616A CN101752391B (en) | 2008-11-28 | 2008-11-28 | Snow slide drifting detector with MOS fully-depleted drifting channel and detecting method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101804616A CN101752391B (en) | 2008-11-28 | 2008-11-28 | Snow slide drifting detector with MOS fully-depleted drifting channel and detecting method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101752391A true CN101752391A (en) | 2010-06-23 |
| CN101752391B CN101752391B (en) | 2011-11-09 |
Family
ID=42479082
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008101804616A Expired - Fee Related CN101752391B (en) | 2008-11-28 | 2008-11-28 | Snow slide drifting detector with MOS fully-depleted drifting channel and detecting method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101752391B (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102445711A (en) * | 2010-09-30 | 2012-05-09 | 中国科学院苏州纳米技术与纳米仿生研究所 | THz-wave detector |
| CN103135120A (en) * | 2011-11-30 | 2013-06-05 | 中国辐射防护研究院 | Measuring method and measuring device of regional gamma radiation based on silicon photomultiplier |
| CN104377269A (en) * | 2013-08-13 | 2015-02-25 | 哈尔滨工大华生电子有限公司 | High-gain infinitesimal avalanche photodiode array preparing method |
| CN105590985A (en) * | 2015-12-31 | 2016-05-18 | 南京大学 | Optoelectronic device based on two-dimensional layered material p-i-n heterojunction |
| CN106353666A (en) * | 2016-09-07 | 2017-01-25 | 成都天诚慧芯科技有限公司 | Deducting and deduction testing methods for <60>Co Gamma-ray radiation response of SOI (silicon on insulator) NMOSFET (N-channel metal oxide semiconductor field-effect transistor) |
| CN106784054A (en) * | 2017-03-06 | 2017-05-31 | 北京世纪金光半导体有限公司 | A kind of ultraviolet avalanche photodiode detector and its detection method |
| CN106960852A (en) * | 2017-03-06 | 2017-07-18 | 北京世纪金光半导体有限公司 | Ultraviolet avalanche photodiode detector and its detection method with drift channel |
| CN107342338A (en) * | 2017-08-22 | 2017-11-10 | 北京世纪金光半导体有限公司 | A kind of ultraviolet the snowslide drifting detector and detection method of more drift ring structures |
| US11177882B2 (en) | 2018-07-25 | 2021-11-16 | Universidad Antonio Nariño | Receiver for low-power optical signals with operation in conditions of high incidence of background light and application in visible light communication |
| CN113921646A (en) * | 2021-09-30 | 2022-01-11 | 厦门市三安集成电路有限公司 | Single-photon detector, manufacturing method thereof and single-photon detector array |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6359293B1 (en) * | 1999-08-17 | 2002-03-19 | Agere Systems Guardian Corp. | Integrated optoelectronic device with an avalanche photodetector and method of making the same using commercial CMOS processes |
-
2008
- 2008-11-28 CN CN2008101804616A patent/CN101752391B/en not_active Expired - Fee Related
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102445711A (en) * | 2010-09-30 | 2012-05-09 | 中国科学院苏州纳米技术与纳米仿生研究所 | THz-wave detector |
| CN102445711B (en) * | 2010-09-30 | 2013-10-30 | 中国科学院苏州纳米技术与纳米仿生研究所 | THz-wave detector |
| CN103135120A (en) * | 2011-11-30 | 2013-06-05 | 中国辐射防护研究院 | Measuring method and measuring device of regional gamma radiation based on silicon photomultiplier |
| CN104377269A (en) * | 2013-08-13 | 2015-02-25 | 哈尔滨工大华生电子有限公司 | High-gain infinitesimal avalanche photodiode array preparing method |
| CN105590985B (en) * | 2015-12-31 | 2017-11-10 | 南京大学 | Based on the sub- device of two-dimentional layer material p i n heterojunction photovoltaics |
| CN105590985A (en) * | 2015-12-31 | 2016-05-18 | 南京大学 | Optoelectronic device based on two-dimensional layered material p-i-n heterojunction |
| CN106353666A (en) * | 2016-09-07 | 2017-01-25 | 成都天诚慧芯科技有限公司 | Deducting and deduction testing methods for <60>Co Gamma-ray radiation response of SOI (silicon on insulator) NMOSFET (N-channel metal oxide semiconductor field-effect transistor) |
| CN106353666B (en) * | 2016-09-07 | 2018-12-25 | 成都天诚慧芯科技有限公司 | SOI NMOSFET's60The response of Co gamma Rays derives and derives test method |
| CN106784054A (en) * | 2017-03-06 | 2017-05-31 | 北京世纪金光半导体有限公司 | A kind of ultraviolet avalanche photodiode detector and its detection method |
| CN106960852A (en) * | 2017-03-06 | 2017-07-18 | 北京世纪金光半导体有限公司 | Ultraviolet avalanche photodiode detector and its detection method with drift channel |
| CN106960852B (en) * | 2017-03-06 | 2021-01-29 | 北京世纪金光半导体有限公司 | Ultraviolet avalanche photodiode detector with drift channel and detection method thereof |
| CN107342338A (en) * | 2017-08-22 | 2017-11-10 | 北京世纪金光半导体有限公司 | A kind of ultraviolet the snowslide drifting detector and detection method of more drift ring structures |
| US11177882B2 (en) | 2018-07-25 | 2021-11-16 | Universidad Antonio Nariño | Receiver for low-power optical signals with operation in conditions of high incidence of background light and application in visible light communication |
| CN113921646A (en) * | 2021-09-30 | 2022-01-11 | 厦门市三安集成电路有限公司 | Single-photon detector, manufacturing method thereof and single-photon detector array |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101752391B (en) | 2011-11-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101752391B (en) | Snow slide drifting detector with MOS fully-depleted drifting channel and detecting method thereof | |
| US9728667B1 (en) | Solid state photomultiplier using buried P-N junction | |
| US11101315B2 (en) | Detector, PET system and X-ray CT system | |
| RU2416840C2 (en) | Avalanche photodiode in geiger counter mode | |
| US6713768B2 (en) | Junction-side illuminated silicon detector arrays | |
| US9110174B2 (en) | Pixellated detector device | |
| RU2575941C2 (en) | X-ray detector of direct conversion | |
| US8729654B2 (en) | Back-side readout semiconductor photomultiplier | |
| US9660115B2 (en) | Nano-electrode multi-well high-gain avalanche rushing photoconductor | |
| CN115084295A (en) | Silicon photomultiplier structure applied to radiation and weak light detection and preparation method thereof | |
| US20160259063A1 (en) | Integrated solid state scintillator dosimeter | |
| CN211907450U (en) | Bulk resistance quenching avalanche photodiode array detector | |
| KR20090129123A (en) | Silicon photomultiplier with improved photodetecting efficiency and gamma radiation detector comprising the same | |
| Dolgoshein et al. | Silicon photomultipliers in particle physics: possibilities and limitations | |
| Peng et al. | A square-bordered position-sensitive silicon photomultiplier toward distortion-free performance with high spatial resolution | |
| US11705533B2 (en) | Photosensitive component, x-ray detector and display device | |
| WO2012034178A1 (en) | Radiation detector method and apparatus | |
| US7825384B1 (en) | Quantum detector array | |
| Entine et al. | Scintillation detectors using large area silicon avalanche photodiodes | |
| CN116964748A (en) | Photodetector | |
| Yuan et al. | A theoretical study of two novel SiC and GaN ultraviolet avalanche drift detectors with front-illumination | |
| Johnson et al. | New developments for CMOS SSPMs | |
| RU2528107C1 (en) | Semiconductor avalanche detector | |
| Safavi-Naeini et al. | Evaluation of pixellated, back-sided planar photodetectors for high-resolution imaging instrumentation | |
| Dhulla et al. | Silicon photomultiplier: Detector for highly sensitive detection of fluorescence signals |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111109 Termination date: 20131128 |