CN103858230A - 光电子模块和用于制造该光电子模块的方法 - Google Patents
光电子模块和用于制造该光电子模块的方法 Download PDFInfo
- Publication number
- CN103858230A CN103858230A CN201280049588.9A CN201280049588A CN103858230A CN 103858230 A CN103858230 A CN 103858230A CN 201280049588 A CN201280049588 A CN 201280049588A CN 103858230 A CN103858230 A CN 103858230A
- Authority
- CN
- China
- Prior art keywords
- optical component
- wafer
- module
- active optical
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 119
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 96
- 230000003287 optical effect Effects 0.000 claims abstract description 335
- 239000000758 substrate Substances 0.000 claims abstract description 176
- 238000000034 method Methods 0.000 claims abstract description 62
- 235000012431 wafers Nutrition 0.000 claims description 276
- 239000013078 crystal Substances 0.000 claims description 72
- 239000000463 material Substances 0.000 claims description 64
- 238000004891 communication Methods 0.000 claims description 5
- 230000000903 blocking effect Effects 0.000 abstract 1
- 239000011265 semifinished product Substances 0.000 description 22
- 239000002243 precursor Substances 0.000 description 19
- 238000005516 engineering process Methods 0.000 description 15
- 229920000642 polymer Polymers 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000012780 transparent material Substances 0.000 description 9
- 230000033228 biological regulation Effects 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 7
- 238000005538 encapsulation Methods 0.000 description 7
- 239000003822 epoxy resin Substances 0.000 description 7
- 229920000647 polyepoxide Polymers 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 238000000465 moulding Methods 0.000 description 6
- 238000005498 polishing Methods 0.000 description 6
- 238000003825 pressing Methods 0.000 description 6
- 208000034189 Sclerosis Diseases 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000010923 batch production Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 244000025254 Cannabis sativa Species 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
- 230000001680 brushing effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 230000005499 meniscus Effects 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 235000019994 cava Nutrition 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 210000000056 organ Anatomy 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 230000003362 replicative effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (30)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161521818P | 2011-08-10 | 2011-08-10 | |
US61/521818 | 2011-08-10 | ||
PCT/CH2012/000178 WO2013020238A1 (en) | 2011-08-10 | 2012-08-02 | Opto-electronic module and method for manufacturing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103858230A true CN103858230A (zh) | 2014-06-11 |
CN103858230B CN103858230B (zh) | 2018-03-27 |
Family
ID=46762761
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201280049588.9A Active CN103858230B (zh) | 2011-08-10 | 2012-08-02 | 光电子模块和用于制造该光电子模块的方法 |
Country Status (8)
Country | Link |
---|---|
US (2) | US9224772B2 (zh) |
EP (1) | EP2742529B1 (zh) |
JP (1) | JP6247633B2 (zh) |
KR (1) | KR101890457B1 (zh) |
CN (1) | CN103858230B (zh) |
SG (2) | SG10201606075XA (zh) |
TW (2) | TWI552275B (zh) |
WO (1) | WO2013020238A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108780141A (zh) * | 2016-02-22 | 2018-11-09 | 新加坡恒立私人有限公司 | 具有孔的薄光电模块及其制造 |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9525093B2 (en) * | 2009-06-30 | 2016-12-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Infrared attenuating or blocking layer in optical proximity sensor |
DE102011113483B4 (de) * | 2011-09-13 | 2023-10-19 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum Herstellen einer Mehrzahl von optoelektronischen Bauelementen und optoelektronisches Bauelement |
CN103685881B (zh) * | 2012-09-19 | 2018-09-21 | Lg伊诺特有限公司 | 照相机模块 |
US20140160751A1 (en) * | 2012-12-11 | 2014-06-12 | Vixar Inc. | Low cost optical package |
US9543354B2 (en) * | 2013-07-30 | 2017-01-10 | Heptagon Micro Optics Pte. Ltd. | Optoelectronic modules that have shielding to reduce light leakage or stray light, and fabrication methods for such modules |
TWI650851B (zh) * | 2013-12-10 | 2019-02-11 | 新加坡商新加坡恒立私人有限公司 | 晶圓級光學模組及其製造方法 |
WO2016013978A1 (en) * | 2014-07-23 | 2016-01-28 | Heptagon Micro Optics Pte. Ltd. | Light emitter and light detector modules including vertical alignment features |
US9711552B2 (en) * | 2014-08-19 | 2017-07-18 | Heptagon Micro Optics Pte. Ltd. | Optoelectronic modules having a silicon substrate, and fabrication methods for such modules |
CN204760384U (zh) * | 2015-05-18 | 2015-11-11 | 华天科技(昆山)电子有限公司 | 高像素影像传感芯片的晶圆级封装结构 |
KR101778848B1 (ko) * | 2015-08-21 | 2017-09-14 | 엘지전자 주식회사 | 발광소자 패키지 어셈블리 및 이의 제조 방법 |
DE102015114563A1 (de) * | 2015-09-01 | 2017-03-02 | Osram Opto Semiconductors Gmbh | Mikrolinse für LED-Modul |
US10304813B2 (en) * | 2015-11-05 | 2019-05-28 | Innolux Corporation | Display device having a plurality of bank structures |
KR102572819B1 (ko) * | 2016-02-23 | 2023-08-30 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광모듈 제조방법 및 표시장치 |
WO2017155460A1 (en) * | 2016-03-08 | 2017-09-14 | Tnc Optics & Technologies Pte. Ltd. | A fabrication method of optical sensor cover having a lens |
US10566468B2 (en) | 2016-03-23 | 2020-02-18 | ams Sensors Singapore Pte. Ltd | Optoelectronic module assembly and manufacturing method |
US20180017741A1 (en) * | 2016-07-15 | 2018-01-18 | Advanced Semiconductor Engineering, Inc. | Semiconductor package device and method of manufacturing the same |
TWI618156B (zh) | 2016-08-05 | 2018-03-11 | 矽品精密工業股份有限公司 | 電子封裝件及其製法 |
WO2020142656A1 (en) | 2019-01-04 | 2020-07-09 | Engent, Inc. | Systems and methods for precision placement of components |
US11272631B2 (en) | 2019-09-09 | 2022-03-08 | Apple Inc. | Conductive PVD stack-up design to improve reliability of deposited electrodes |
CN112911824A (zh) * | 2019-12-04 | 2021-06-04 | 菲尼萨公司 | 用于光纤印刷电路板组件的表面安装技术 |
DE102021100530A1 (de) | 2021-01-13 | 2022-07-14 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches halbleiterbauelement und verfahren zur herstellung eines optoelektronischen halbleiterbauelements |
US11953722B2 (en) | 2021-06-02 | 2024-04-09 | Luminar Technologies, Inc. | Protective mask for an optical receiver |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7148502B2 (en) * | 2003-04-02 | 2006-12-12 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, electronic equipment and apparatus for manufacturing the same |
US20070009223A1 (en) * | 2004-02-27 | 2007-01-11 | Heptagon Oy | Micro-optics on optoelectronics |
US20090059588A1 (en) * | 2007-08-30 | 2009-03-05 | Moritz Engl | Housing comprising a housing underpart and method for emitting electromagnetic radiation |
CN101459165A (zh) * | 2007-12-13 | 2009-06-17 | 夏普株式会社 | 电子元件晶片模块、其制造方法以及电子信息设备 |
CN101828271A (zh) * | 2007-10-17 | 2010-09-08 | 英特曼帝克司公司 | 具有磷光体波长转换的发光装置 |
Family Cites Families (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3042853B2 (ja) | 1989-02-16 | 2000-05-22 | テキサス インスツルメンツ インコーポレイテツド | 集積回路 |
JPH0749487Y2 (ja) * | 1989-06-29 | 1995-11-13 | スタンレー電気株式会社 | Ledイレーサ |
JPH0782142B2 (ja) * | 1989-06-29 | 1995-09-06 | スタンレー電気株式会社 | Ledイレーサの組立方法 |
JP2902898B2 (ja) * | 1993-05-17 | 1999-06-07 | 京セラ株式会社 | 画像装置 |
JP2958212B2 (ja) * | 1993-05-21 | 1999-10-06 | 京セラ株式会社 | 画像装置 |
JPH08234071A (ja) * | 1995-02-27 | 1996-09-13 | Kyocera Corp | 画像装置 |
US5912872A (en) | 1996-09-27 | 1999-06-15 | Digital Optics Corporation | Integrated optical apparatus providing separated beams on a detector and associated methods |
US6096155A (en) | 1996-09-27 | 2000-08-01 | Digital Optics Corporation | Method of dicing wafer level integrated multiple optical elements |
JP2000025270A (ja) * | 1998-03-31 | 2000-01-25 | Kyocera Corp | 光プリンタヘッド |
KR100393057B1 (ko) * | 2000-10-20 | 2003-07-31 | 삼성전자주식회사 | 마이크로 렌즈 일체형 표면광 레이저 |
US6917461B2 (en) * | 2000-12-29 | 2005-07-12 | Texas Instruments Incorporated | Laminated package |
JP2004071366A (ja) * | 2002-08-07 | 2004-03-04 | Omron Corp | 光電センサ |
US20050009239A1 (en) * | 2003-07-07 | 2005-01-13 | Wolff Larry Lee | Optoelectronic packaging with embedded window |
US7452140B2 (en) * | 2003-07-16 | 2008-11-18 | Ibiden Co., Ltd. | Protective sealing of optoelectronic modules |
JP2005038956A (ja) * | 2003-07-17 | 2005-02-10 | Matsushita Electric Ind Co Ltd | 光部品とその製造方法 |
EP1683344A1 (en) * | 2003-10-27 | 2006-07-26 | Koninklijke Philips Electronics N.V. | Camera module and manufacturing method for such a camera module |
US7517728B2 (en) * | 2004-03-31 | 2009-04-14 | Cree, Inc. | Semiconductor light emitting devices including a luminescent conversion element |
US7326583B2 (en) * | 2004-03-31 | 2008-02-05 | Cree, Inc. | Methods for packaging of a semiconductor light emitting device |
US8097897B2 (en) * | 2005-06-21 | 2012-01-17 | Epistar Corporation | High-efficiency light-emitting device and manufacturing method thereof |
US7245065B2 (en) * | 2005-03-31 | 2007-07-17 | Eastman Kodak Company | Reducing angular dependency in microcavity color OLEDs |
JP4640248B2 (ja) * | 2005-07-25 | 2011-03-02 | 豊田合成株式会社 | 光源装置 |
JP5209177B2 (ja) | 2005-11-14 | 2013-06-12 | 新光電気工業株式会社 | 半導体装置および半導体装置の製造方法 |
JP4881001B2 (ja) * | 2005-12-29 | 2012-02-22 | シチズン電子株式会社 | 発光装置 |
KR100648628B1 (ko) * | 2005-12-29 | 2006-11-24 | 서울반도체 주식회사 | 발광 다이오드 |
US7795600B2 (en) * | 2006-03-24 | 2010-09-14 | Goldeneye, Inc. | Wavelength conversion chip for use with light emitting diodes and method for making same |
EP2013909A4 (en) * | 2006-04-18 | 2011-07-06 | Lamina Lighting Inc | OPTICAL DEVICES FOR CONTROLLED COLOR MIXTURE |
US20080068939A1 (en) * | 2006-09-19 | 2008-03-20 | Akihiro Tanaka | Objective lens actuator, diffractive optical element, and optical pickup device |
US8013350B2 (en) * | 2007-02-05 | 2011-09-06 | Panasonic Corporation | Optical device and method for manufacturing optical device, and camera module and endoscope module equipped with optical device |
US7692256B2 (en) | 2007-03-23 | 2010-04-06 | Heptagon Oy | Method of producing a wafer scale package |
KR101575915B1 (ko) | 2007-11-27 | 2015-12-08 | 헵타곤 마이크로 옵틱스 피티이. 리미티드 | 봉지된 렌즈 스택 |
EP2223173B1 (en) * | 2007-12-19 | 2013-09-04 | Heptagon Micro Optics Pte. Ltd. | Camera device and manufacturing methods therefor |
TWI478808B (zh) | 2007-12-19 | 2015-04-01 | Heptagon Micro Optics Pte Ltd | 製造光學元件的方法 |
JP2009212171A (ja) * | 2008-03-01 | 2009-09-17 | Yoshiaki Sonoda | チップ型ledの実装方法 |
KR101506264B1 (ko) * | 2008-06-13 | 2015-03-30 | 삼성전자주식회사 | 발광 소자, 발광 장치 및 상기 발광 소자의 제조 방법 |
WO2010020062A1 (en) | 2008-08-20 | 2010-02-25 | Heptagon Oy | Method of manufacturing a pluralty of optical devices |
KR20100030472A (ko) * | 2008-09-10 | 2010-03-18 | 삼성전자주식회사 | 발광 소자 및 발광 장치의 제조 방법, 상기 방법을 이용하여 제조한 발광 소자 및 발광 장치 |
KR101497953B1 (ko) * | 2008-10-01 | 2015-03-05 | 삼성전자 주식회사 | 광추출 효율이 향상된 발광 소자, 이를 포함하는 발광 장치, 상기 발광 소자 및 발광 장치의 제조 방법 |
CN102217102B (zh) * | 2008-11-14 | 2015-07-15 | 三星电子株式会社 | 半导体发光器件 |
WO2011024861A1 (ja) * | 2009-08-25 | 2011-03-03 | 東芝ライテック株式会社 | 発光装置および照明装置 |
TW201109164A (en) * | 2009-09-11 | 2011-03-16 | E Pin Optical Industry Co Ltd | Stacked disk-shaped optical lens array, stacked lens module and their method of manufacturing thereof |
US20110293168A1 (en) * | 2010-05-25 | 2011-12-01 | Yoshihiko Matsushima | Method for mounting transparent component |
WO2011156926A1 (en) * | 2010-06-14 | 2011-12-22 | Heptagon Oy | Method of manufacturing a plurality of optical devices |
KR101182920B1 (ko) * | 2010-07-05 | 2012-09-13 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
TW201208131A (en) * | 2010-08-05 | 2012-02-16 | Everlight Electronics Co Ltd | Light emitting diode package structure |
US9391247B2 (en) * | 2010-12-16 | 2016-07-12 | Cree, Inc. | High power LEDs with non-polymer material lenses and methods of making the same |
US8957430B2 (en) * | 2011-06-15 | 2015-02-17 | Cree, Inc. | Gel underfill layers for light emitting diodes |
SG10201605834YA (en) * | 2011-07-19 | 2016-09-29 | Heptagon Micro Optics Pte Ltd | Method for manufacturing passive optical components, and devices comprising the same |
JP6162114B2 (ja) * | 2011-07-19 | 2017-07-12 | ヘプタゴン・マイクロ・オプティクス・プライベート・リミテッドHeptagon Micro Optics Pte. Ltd. | 光電子モジュール、光電子モジュールの製造方法、ならびに光電子モジュールを備える機器およびデバイス |
US8791489B2 (en) * | 2012-04-05 | 2014-07-29 | Heptagon Micro Optics Pte. Ltd. | Opto-electronic module |
-
2012
- 2012-08-02 JP JP2014524232A patent/JP6247633B2/ja active Active
- 2012-08-02 CN CN201280049588.9A patent/CN103858230B/zh active Active
- 2012-08-02 SG SG10201606075XA patent/SG10201606075XA/en unknown
- 2012-08-02 SG SG2014005805A patent/SG2014005805A/en unknown
- 2012-08-02 WO PCT/CH2012/000178 patent/WO2013020238A1/en active Application Filing
- 2012-08-02 KR KR1020147006294A patent/KR101890457B1/ko active IP Right Grant
- 2012-08-02 EP EP12753377.6A patent/EP2742529B1/en active Active
- 2012-08-07 TW TW101128458A patent/TWI552275B/zh active
- 2012-08-07 TW TW105121575A patent/TWI601244B/zh active
- 2012-08-08 US US13/569,707 patent/US9224772B2/en active Active
-
2015
- 2015-11-19 US US14/945,505 patent/US9786820B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7148502B2 (en) * | 2003-04-02 | 2006-12-12 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, electronic equipment and apparatus for manufacturing the same |
US20070009223A1 (en) * | 2004-02-27 | 2007-01-11 | Heptagon Oy | Micro-optics on optoelectronics |
US20090059588A1 (en) * | 2007-08-30 | 2009-03-05 | Moritz Engl | Housing comprising a housing underpart and method for emitting electromagnetic radiation |
CN101828271A (zh) * | 2007-10-17 | 2010-09-08 | 英特曼帝克司公司 | 具有磷光体波长转换的发光装置 |
CN101459165A (zh) * | 2007-12-13 | 2009-06-17 | 夏普株式会社 | 电子元件晶片模块、其制造方法以及电子信息设备 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108780141A (zh) * | 2016-02-22 | 2018-11-09 | 新加坡恒立私人有限公司 | 具有孔的薄光电模块及其制造 |
CN108780141B (zh) * | 2016-02-22 | 2023-04-18 | 新加坡恒立私人有限公司 | 具有孔的薄光电模块及其制造 |
Also Published As
Publication number | Publication date |
---|---|
US20130037831A1 (en) | 2013-02-14 |
US20160072023A1 (en) | 2016-03-10 |
US9786820B2 (en) | 2017-10-10 |
TWI601244B (zh) | 2017-10-01 |
JP2014524663A (ja) | 2014-09-22 |
CN103858230B (zh) | 2018-03-27 |
KR101890457B1 (ko) | 2018-08-21 |
TW201312706A (zh) | 2013-03-16 |
US9224772B2 (en) | 2015-12-29 |
JP6247633B2 (ja) | 2017-12-13 |
KR20140057596A (ko) | 2014-05-13 |
TWI552275B (zh) | 2016-10-01 |
EP2742529B1 (en) | 2020-11-11 |
EP2742529A1 (en) | 2014-06-18 |
WO2013020238A1 (en) | 2013-02-14 |
SG10201606075XA (en) | 2016-09-29 |
TW201717326A (zh) | 2017-05-16 |
SG2014005805A (en) | 2014-06-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103858230A (zh) | 光电子模块和用于制造该光电子模块的方法 | |
CN103512595B (zh) | 光电模块及其制造方法与包含光电模块的电器及装置 | |
CN105493282B (zh) | 具有减少漏光或杂散光的屏蔽的光电模块以及用于此类模块的制造方法 | |
KR102208832B1 (ko) | 웨이퍼 스택 조립 | |
KR101966478B1 (ko) | 수동 광학 부품을 제조하기 위한 방법 및 그것을 포함하는 장치 | |
TWI584452B (zh) | 可回焊之光電模組 | |
CN104303077A (zh) | 光电模块 | |
CN113224040A (zh) | 板载芯片封装显示元件及其制造方法 | |
US20190180654A1 (en) | Module for a video wall having a film |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C53 | Correction of patent of invention or patent application | ||
CB02 | Change of applicant information |
Address after: Singapore Singapore Applicant after: HEPTAGON MICRO OPTICS Pte. Ltd. Address before: Singapore Singapore Applicant before: HEPTAGON MICRO OPTICS Pte. Ltd. |
|
COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: HEPTAGON MICRO OPTICS PTE. LTD. TO: SINGAPORE HENGLI PRIVATE LTD. |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: Shinka ha Patentee after: Ames Osram Asia Pacific Pte. Ltd. Country or region after: Singapore Address before: Shinka ha Patentee before: Sensors Singapore Private Ltd. Country or region before: Singapore Address after: Shinka ha Patentee after: Sensors Singapore Private Ltd. Country or region after: Singapore Address before: Singapore City Patentee before: HEPTAGON MICRO OPTICS Pte. Ltd. Country or region before: Singapore |