CN108780141A - 具有孔的薄光电模块及其制造 - Google Patents
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- CN108780141A CN108780141A CN201780011201.3A CN201780011201A CN108780141A CN 108780141 A CN108780141 A CN 108780141A CN 201780011201 A CN201780011201 A CN 201780011201A CN 108780141 A CN108780141 A CN 108780141A
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- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3511—Warping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Networks & Wireless Communication (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Led Device Packages (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
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Abstract
Description
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US201662298107P | 2016-02-22 | 2016-02-22 | |
US62/298107 | 2016-02-22 | ||
PCT/SG2017/050078 WO2017146645A1 (en) | 2016-02-22 | 2017-02-21 | Thin optoelectronic modules with apertures and their manufacture |
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CN108780141A true CN108780141A (zh) | 2018-11-09 |
CN108780141B CN108780141B (zh) | 2023-04-18 |
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CN (1) | CN108780141B (zh) |
TW (1) | TWI718260B (zh) |
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Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20190355886A9 (en) * | 2015-03-31 | 2019-11-21 | Cree, Inc. | Light emitting diodes and methods |
KR102626784B1 (ko) * | 2015-11-17 | 2024-01-17 | 에이엠에스-오스람 아시아 퍼시픽 피티이. 리미티드 | 개구들을 갖는 광전 모듈들 및 그 제조 |
EP3471146B1 (en) * | 2017-10-16 | 2020-09-09 | ams AG | Method for manufacturing an optical sensor and optical sensor |
TWI646618B (zh) * | 2018-01-09 | 2019-01-01 | 宏碁股份有限公司 | 微元件轉移設備和相關方法 |
US11742381B2 (en) * | 2020-07-14 | 2023-08-29 | Semiconductor Components Industries, Llc | Monolithic semiconductor device assemblies |
WO2022175380A1 (en) * | 2021-02-22 | 2022-08-25 | Nilt Switzerland Gmbh | Optical devices including an optical layer on a substrate |
CN117317035B (zh) * | 2023-10-09 | 2024-05-24 | 讯芯电子科技(中山)有限公司 | 一种光感传感器封装结构及其封装方法 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6345903B1 (en) * | 2000-09-01 | 2002-02-12 | Citizen Electronics Co., Ltd. | Surface-mount type emitting diode and method of manufacturing same |
US20030173506A1 (en) * | 2002-03-13 | 2003-09-18 | Phone-Or Ltd. | Optical transducers and methods of making same |
CN101779281A (zh) * | 2007-06-29 | 2010-07-14 | 肖特公开股份有限公司 | 用于封装半导体构件的方法以及根据该方法制备的产品 |
CN103124912A (zh) * | 2010-10-04 | 2013-05-29 | 罗伯特·博世有限公司 | 用于分离光学路径的光学屏蔽装置 |
CN103512596A (zh) * | 2012-06-15 | 2014-01-15 | 英特赛尔美国有限公司 | 晶片级光电子器件封装及其制造方法 |
CN103512595A (zh) * | 2011-07-19 | 2014-01-15 | 赫普塔冈微光有限公司 | 光电模块及其制造方法与包含光电模块的电器及装置 |
CN103858230A (zh) * | 2011-08-10 | 2014-06-11 | 七边形微光学私人有限公司 | 光电子模块和用于制造该光电子模块的方法 |
CN103959465A (zh) * | 2011-10-06 | 2014-07-30 | 新加坡恒立私人有限公司 | 用于物体的晶片级制造的方法以及相应的中间产品 |
CN104009030A (zh) * | 2013-02-20 | 2014-08-27 | 马克西姆综合产品公司 | 多芯片型晶圆级封装(wlp)光学器件 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI237546B (en) * | 2003-01-30 | 2005-08-01 | Osram Opto Semiconductors Gmbh | Semiconductor-component sending and/or receiving electromagnetic radiation and housing-basebody for such a component |
US7288679B2 (en) * | 2004-08-06 | 2007-10-30 | Agfa-Gevaert | Device provided with a dedicated dye compound |
US7837369B2 (en) * | 2007-01-22 | 2010-11-23 | Seiko Epson Corporation | Light-emitting device, image-printing device, and manufacturing method of sealing member |
US8324723B2 (en) * | 2008-03-25 | 2012-12-04 | Bridge Semiconductor Corporation | Semiconductor chip assembly with bump/base heat spreader and dual-angle cavity in bump |
KR20090108233A (ko) | 2008-04-11 | 2009-10-15 | 삼성전자주식회사 | 카메라 모듈의 제조 방법, 이에 의해 제작된 카메라 모듈및 상기 카메라 모듈을 포함하는 전자 시스템 |
WO2012022000A1 (en) * | 2010-08-17 | 2012-02-23 | Heptagon Oy | Method of manufacturing a plurality of optical devices for cameras |
US8841597B2 (en) * | 2010-12-27 | 2014-09-23 | Avago Technologies Ip (Singapore) Pte. Ltd. | Housing for optical proximity sensor |
DE102011050450A1 (de) * | 2011-05-18 | 2012-11-22 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip, optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
US9490287B2 (en) * | 2011-12-21 | 2016-11-08 | Heptagon Micro Optics Pte. Ltd. | Optical devices and opto-electronic modules and methods for manufacturing the same |
US9735198B2 (en) * | 2012-03-30 | 2017-08-15 | Cree, Inc. | Substrate based light emitter devices, components, and related methods |
US9177992B2 (en) * | 2013-01-09 | 2015-11-03 | Nthdegree Technologies Worldwide Inc. | Active LED module with LED and transistor formed on same substrate |
US9094593B2 (en) * | 2013-07-30 | 2015-07-28 | Heptagon Micro Optics Pte. Ltd. | Optoelectronic modules that have shielding to reduce light leakage or stray light, and fabrication methods for such modules |
US10061057B2 (en) * | 2015-08-21 | 2018-08-28 | Stmicroelectronics (Research & Development) Limited | Molded range and proximity sensor with optical resin lens |
-
2017
- 2017-02-21 CN CN201780011201.3A patent/CN108780141B/zh active Active
- 2017-02-21 WO PCT/SG2017/050078 patent/WO2017146645A1/en active Application Filing
- 2017-02-21 TW TW106105778A patent/TWI718260B/zh active
- 2017-02-21 US US16/073,418 patent/US11018269B2/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6345903B1 (en) * | 2000-09-01 | 2002-02-12 | Citizen Electronics Co., Ltd. | Surface-mount type emitting diode and method of manufacturing same |
US20030173506A1 (en) * | 2002-03-13 | 2003-09-18 | Phone-Or Ltd. | Optical transducers and methods of making same |
CN101779281A (zh) * | 2007-06-29 | 2010-07-14 | 肖特公开股份有限公司 | 用于封装半导体构件的方法以及根据该方法制备的产品 |
CN103124912A (zh) * | 2010-10-04 | 2013-05-29 | 罗伯特·博世有限公司 | 用于分离光学路径的光学屏蔽装置 |
CN103512595A (zh) * | 2011-07-19 | 2014-01-15 | 赫普塔冈微光有限公司 | 光电模块及其制造方法与包含光电模块的电器及装置 |
CN103858230A (zh) * | 2011-08-10 | 2014-06-11 | 七边形微光学私人有限公司 | 光电子模块和用于制造该光电子模块的方法 |
CN103959465A (zh) * | 2011-10-06 | 2014-07-30 | 新加坡恒立私人有限公司 | 用于物体的晶片级制造的方法以及相应的中间产品 |
CN103512596A (zh) * | 2012-06-15 | 2014-01-15 | 英特赛尔美国有限公司 | 晶片级光电子器件封装及其制造方法 |
CN104009030A (zh) * | 2013-02-20 | 2014-08-27 | 马克西姆综合产品公司 | 多芯片型晶圆级封装(wlp)光学器件 |
Non-Patent Citations (1)
Title |
---|
THORSTEN MATTHIAS等: "CMOS图像传感器晶圆级封装工艺的进展", 《功能材料与器件学报》 * |
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WO2017146645A1 (en) | 2017-08-31 |
US11018269B2 (en) | 2021-05-25 |
US20190051762A1 (en) | 2019-02-14 |
CN108780141B (zh) | 2023-04-18 |
TWI718260B (zh) | 2021-02-11 |
TW201742269A (zh) | 2017-12-01 |
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