CN103794615B - 固态成像设备，其制造方法，以及照相机 - Google Patents

固态成像设备，其制造方法，以及照相机 Download PDF

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CN103794615B
CN103794615B CN201310496051.3A CN201310496051A CN103794615B CN 103794615 B CN103794615 B CN 103794615B CN 201310496051 A CN201310496051 A CN 201310496051A CN 103794615 B CN103794615 B CN 103794615B
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pixels
light
substrate
dielectric film
face
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CN103794615A (zh
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篠原真人
板桥政次
熊野秀臣
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201310496051.3A 2012-10-26 2013-10-22 固态成像设备，其制造方法，以及照相机 Active CN103794615B (zh)

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JP2012-237270 2012-10-26
JP2012237270A JP6055270B2 (ja) 2012-10-26 2012-10-26 固体撮像装置、その製造方法、およびカメラ

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CN103794615B true CN103794615B (zh) 2016-09-07

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Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9121759B2 (en) * 2013-09-09 2015-09-01 Heptagon Micro Optics Pte. Ltd. Arrangements for detecting light of different wavelength at different angles
JP6274567B2 (ja) 2014-03-14 2018-02-07 キヤノン株式会社 固体撮像装置及び撮像システム
JP2015177034A (ja) 2014-03-14 2015-10-05 キヤノン株式会社 固体撮像装置、その製造方法、及びカメラ
US10204943B2 (en) 2016-08-10 2019-02-12 Canon Kabushiki Kaisha Image sensor, method of manufacturing the same, and camera with pixel including light waveguide and insulation film
JP6552479B2 (ja) 2016-12-28 2019-07-31 キヤノン株式会社 固体撮像装置及び撮像システム
JP6982977B2 (ja) 2017-04-24 2021-12-17 キヤノン株式会社 固体撮像装置の製造方法
CN107680980A (zh) * 2017-09-29 2018-02-09 德淮半导体有限公司 图像传感器
JP6953263B2 (ja) 2017-10-05 2021-10-27 キヤノン株式会社 固体撮像装置および撮像システム
JP2019114642A (ja) * 2017-12-22 2019-07-11 キヤノン株式会社 固体撮像装置、電子機器および輸送機器
WO2019159561A1 (ja) * 2018-02-13 2019-08-22 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、電子装置、および、固体撮像素子の製造方法
JP7108421B2 (ja) 2018-02-15 2022-07-28 キヤノン株式会社 撮像装置及び撮像システム
KR102614907B1 (ko) * 2018-04-04 2023-12-19 삼성전자주식회사 이미지 센서 및 이미지 센서 제조 방법
JP7134781B2 (ja) 2018-08-17 2022-09-12 キヤノン株式会社 光電変換装置及び撮像システム
JP2020068289A (ja) * 2018-10-24 2020-04-30 キヤノン株式会社 光電変換装置、撮像システム、移動体、および積層用の半導体チップ
US11503234B2 (en) 2019-02-27 2022-11-15 Canon Kabushiki Kaisha Photoelectric conversion device, imaging system, radioactive ray imaging system, and movable object
CN109950266A (zh) * 2019-03-26 2019-06-28 德淮半导体有限公司 图像传感器及形成图像传感器的方法
WO2021215299A1 (ja) * 2020-04-21 2021-10-28 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
JP7652543B2 (ja) 2020-07-29 2025-03-27 キヤノン株式会社 光電変換装置
JP7656409B2 (ja) * 2020-08-24 2025-04-03 タワー パートナーズ セミコンダクター株式会社 固体撮像装置
JP7534902B2 (ja) 2020-09-23 2024-08-15 キヤノン株式会社 光電変換装置、撮像装置、半導体装置及び光電変換システム
JP2023023218A (ja) 2021-08-04 2023-02-16 キヤノン株式会社 光電変換装置
JP2024004306A (ja) 2022-06-28 2024-01-16 キヤノン株式会社 光電変換装置
JP2024017294A (ja) 2022-07-27 2024-02-08 キヤノン株式会社 光電変換装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101086546A (zh) * 2006-06-09 2007-12-12 鸿富锦精密工业（深圳）有限公司 镜头模组及相机模组
CN101834194A (zh) * 2009-03-10 2010-09-15 国际商业机器公司 包括遮光罩的像素传感器元件

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003152217A (ja) * 2001-11-16 2003-05-23 Matsushita Electric Ind Co Ltd 受光素子を内蔵する半導体装置
JP2004071817A (ja) * 2002-08-06 2004-03-04 Canon Inc 撮像センサ
JP2004104203A (ja) * 2002-09-05 2004-04-02 Toshiba Corp 固体撮像装置
JP2005005540A (ja) * 2003-06-12 2005-01-06 Sharp Corp 固体撮像装置およびその製造方法
JP2005142510A (ja) * 2003-11-10 2005-06-02 Matsushita Electric Ind Co Ltd 固体撮像装置およびその製造方法
JP2006054262A (ja) * 2004-08-10 2006-02-23 Sony Corp 固体撮像装置
US7453109B2 (en) * 2004-09-03 2008-11-18 Canon Kabushiki Kaisha Solid-state image sensor and imaging system
KR20070061530A (ko) * 2004-09-09 2007-06-13 마츠시타 덴끼 산교 가부시키가이샤 고체촬상소자
US7592645B2 (en) * 2004-12-08 2009-09-22 Canon Kabushiki Kaisha Photoelectric conversion device and method for producing photoelectric conversion device
US7456384B2 (en) * 2004-12-10 2008-11-25 Sony Corporation Method and apparatus for acquiring physical information, method for manufacturing semiconductor device including array of plurality of unit components for detecting physical quantity distribution, light-receiving device and manufacturing method therefor, and solid-state imaging device and manufacturing method therefor
JP4826111B2 (ja) 2005-03-17 2011-11-30 ソニー株式会社 固体撮像素子および固体撮像素子の製造方法および画像撮影装置
JP4469781B2 (ja) * 2005-07-20 2010-05-26 パナソニック株式会社 固体撮像装置及びその製造方法
WO2007037294A1 (en) 2005-09-27 2007-04-05 Canon Kabushiki Kaisha Photoelectric conversion device and fabrication method therefor
KR100745991B1 (ko) * 2006-08-11 2007-08-06 삼성전자주식회사 이미지 센서 및 그 제조 방법
US7656000B2 (en) * 2007-05-24 2010-02-02 Taiwan Semiconductor Manufacturing Company, Ltd. Photodetector for backside-illuminated sensor
US8133768B2 (en) * 2007-05-31 2012-03-13 Nthdegree Technologies Worldwide Inc Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system
TW200913238A (en) * 2007-06-04 2009-03-16 Sony Corp Optical member, solid state imaging apparatus, and manufacturing method
KR100876613B1 (ko) * 2008-05-27 2008-12-31 한국철강 주식회사 탄뎀 박막 실리콘 태양전지 및 그 제조방법
JP2010016056A (ja) 2008-07-01 2010-01-21 Canon Inc 光電変換装置
JP5406537B2 (ja) 2009-01-13 2014-02-05 キヤノン株式会社 光電変換装置、撮像システム、及び光電変換装置の製造方法
FR2946777B1 (fr) * 2009-06-12 2011-07-22 Commissariat Energie Atomique Dispositif de detection et/ou d'emission de rayonnement electromagnetique et procede de fabrication d'un tel dispositif
JP2011014733A (ja) * 2009-07-02 2011-01-20 Toshiba Corp 固体撮像装置
JP5489570B2 (ja) 2009-07-27 2014-05-14 キヤノン株式会社 光電変換装置及び撮像システム
WO2011050179A2 (en) * 2009-10-23 2011-04-28 The Board Of Trustees Of The Leland Stanford Junior University Optoelectronic semiconductor device and method of fabrication
CN102714228A (zh) * 2010-01-18 2012-10-03 应用材料公司 制造具有高转换效率的薄膜太阳能电池
US8368157B2 (en) * 2010-04-06 2013-02-05 Aptina Imaging Coporation Backside illumination image sensors with reflective light guides
JP5717357B2 (ja) 2010-05-18 2015-05-13 キヤノン株式会社 光電変換装置およびカメラ
JP2012042665A (ja) * 2010-08-18 2012-03-01 Sony Corp 光学機能素子および撮像装置
JP2012094719A (ja) * 2010-10-27 2012-05-17 Sony Corp 固体撮像装置、固体撮像装置の製造方法、及び電子機器
JP5767465B2 (ja) 2010-12-15 2015-08-19 キヤノン株式会社 固体撮像装置およびその製造方法ならびにカメラ
JP5810575B2 (ja) * 2011-03-25 2015-11-11 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
JP2012238632A (ja) * 2011-05-10 2012-12-06 Sony Corp 固体撮像装置、固体撮像装置の製造方法、及び、電子機器
JP2013038091A (ja) * 2011-08-03 2013-02-21 Toshiba Corp 固体撮像装置及びその製造方法
JP6029266B2 (ja) * 2011-08-09 2016-11-24 キヤノン株式会社 撮像装置、撮像システムおよび撮像装置の製造方法
JP2013077740A (ja) * 2011-09-30 2013-04-25 Sony Corp 固体撮像素子、固体撮像素子の製造方法、及び、電子機器
JP2013093553A (ja) 2011-10-04 2013-05-16 Canon Inc 光電変換装置及びその製造方法、並びに光電変換システム
US8680454B2 (en) * 2011-12-01 2014-03-25 Omnivision Technologies, Inc. Backside-illuminated (BSI) pixel including light guide
CA2783099C (en) * 2011-12-15 2017-08-22 Research In Motion Limited Camera module having protruding lens barrel
US9040913B2 (en) * 2011-12-19 2015-05-26 Nanohmics, Inc. Wavelength-selective, integrated resonance detector for electromagnetic radiation
JP5774502B2 (ja) * 2012-01-12 2015-09-09 株式会社東芝 固体撮像装置
JP5710526B2 (ja) * 2012-03-14 2015-04-30 株式会社東芝 固体撮像装置、及び固体撮像装置の製造方法
US8835961B2 (en) * 2012-08-02 2014-09-16 Intermolecular, Inc. Index-matched insulators

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101086546A (zh) * 2006-06-09 2007-12-12 鸿富锦精密工业（深圳）有限公司 镜头模组及相机模组
CN101834194A (zh) * 2009-03-10 2010-09-15 国际商业机器公司 包括遮光罩的像素传感器元件

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US20140118602A1 (en) 2014-05-01
US8970769B2 (en) 2015-03-03
JP6055270B2 (ja) 2016-12-27
CN103794615A (zh) 2014-05-14
JP2014086702A (ja) 2014-05-12

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